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WO1997030494A1 - Dissipateur thermique a surface de montage pour composant electronique - Google Patents

Dissipateur thermique a surface de montage pour composant electronique Download PDF

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Publication number
WO1997030494A1
WO1997030494A1 PCT/EP1997/000439 EP9700439W WO9730494A1 WO 1997030494 A1 WO1997030494 A1 WO 1997030494A1 EP 9700439 W EP9700439 W EP 9700439W WO 9730494 A1 WO9730494 A1 WO 9730494A1
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WO
WIPO (PCT)
Prior art keywords
heat sink
copper
layer
mounting surface
component
Prior art date
Application number
PCT/EP1997/000439
Other languages
German (de)
English (en)
Inventor
Jens Biesenbach
Thomas Ebert
Georg Treusch
Guido Bonati
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
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Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Publication of WO1997030494A1 publication Critical patent/WO1997030494A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8586—Means for heat extraction or cooling comprising fluids, e.g. heat-pipes

Definitions

  • the present invention relates to a heat sink with a mounting surface for an electronic component, in particular for a semiconductor component, a component being mountable in the region of its mounting surface using a solder layer of a solder connection that is thinner than 100 ⁇ m, the heat sink in is essentially made of copper, has a layer structure and has a small height in comparison to its surface dimensions.
  • Optimal heat dissipation is an essential criterion for the performance and the service life of electronic components, in particular of optoelectronic components with high heat dissipation losses.
  • Heat dissipation is in particular a problem in the operation of high-power diode lasers with diode laser bars or fields composed of individual laser diodes. Approximately 60-70% of the electrical power introduced is converted into heat in such diode laser bars and has to be dissipated, so that a heat dissipation of more than 1 KW / cm 2 is required.
  • Heat dissipation from the components, in particular with respect to diode laser bars, is possible both by conductance and by convection.
  • DE-A1 43 15 581 describes, for example, an arrangement of laser diodes with a cooling system in a layered construction, in which one layer is a substrate that contains one or more laser diodes, and at least one layer is constructed in this way, that after the layers have been joined together, closed channels are formed through which a cooling medium flows and the substrate is in direct contact with the cooling medium.
  • This direct contact of the cooling medium with the substrate or the laser diode chip is intended to greatly reduce the thermal resistance from the laser-active zone to the cooling medium.
  • DE-A1 45 15 580 discloses a laser diode arrangement with cooling system which is comparable with the arrangement according to DE-A1 43 15 581 and which is essentially concerned with the production of such a cooling arrangement.
  • the heat sink is constructed from individual layers which are structured in such a way that the cutouts formed in the individual layers of the heat sink add to cooling channel structures which extend horizontally and vertically through the heat sink.
  • DE-A1 15 14 055 a cooling device for a semiconductor component with at least two cooling plates running parallel to one another is known, wherein the cooling plates can consist of indium or tin.
  • DE-A1 43 28 353 discloses a multilayer substrate for electrical circuits or components, consisting of a multiplicity of ceramic layers and metallizations, from which heat sinks with improved heat dissipation are built up.
  • the heat sink itself consists of a zigzag-shaped heat sink.
  • the heat sink can be constructed from a layer structure, copper or a copper-tungsten alloy being used as the thermally highly conductive material.
  • thermo-mechanical stresses which occur in the carrier substrate and in the heat sink with its cooling structures and which damage the electronic components to be cooled , such as diode laser bars, can lead.
  • the heat sink heats up during operation of the component, the expansion of the heat sink being greater than that of the electronic component with its substrate carrier. This effect occurs increasingly in diode laser bars due to the high heat dissipation.
  • the heat sink in the form of the heat sink is heated to approximately 180 ° C. by means of a soldering process, and the diode is then attached. The assembly then cools down to ambient temperature again within seconds.
  • the component to be mounted on the heat sink is not cooled during this process. Due to the different thermal expansion coefficients of the heat sink, predominantly made of copper, and of the semiconductor material, for example gallium arsenide (diode laser bars), these two components have expanded to different extents.
  • CVD diamond as material for the heat sink, which is used in conjunction with diode laser bars
  • CVD diamond entail the problem that CVD diamond cannot be soldered; the coefficients of thermal expansion differ by a factor of ten compared to factor 6 to GaAs and the stresses that arise after the solder solidifies can lead to detachment and destruction of the components.
  • the present invention is based on the object of developing a heat sink with a mounting surface for an electronic component of the type described at the outset in such a way that during the operation of the component , in particular a diode laser bar, the stresses occurring, in particular in the area of the boundary layer between the substrate or the semiconductor material and the heat sink or the heat sink, are reduced and the stresses during the connection process between the component and the heat sink after solidification and Cooling can be minimized by the soldering process.
  • the object is achieved in relation to a heat sink with a mounting surface for an electronic component of the type specified in that an intermediate layer is interposed at least between two copper layers, which essentially consists of one or more of the material (s) molybdenum, tungsten, aluminum nitride, pyrolytic graphite, which has a thermal conductivity ( ⁇ ) greater than 100 W / m ⁇ K, the thickness (es) of the intermediate layer (s) being (are) chosen so that a thermal expansion coefficient is set on the mounting surface, so that Coefficient of thermal expansion of the mounting surface of a component to be assembled is adapted so that it does not deviate from this by more than 10%.
  • the material (s) molybdenum, tungsten, aluminum nitride, pyrolytic graphite which has a thermal conductivity ( ⁇ ) greater than 100 W / m ⁇ K
  • the thickness (es) of the intermediate layer (s) being (are) chosen so that a thermal expansion coefficient is set on the mounting surface
  • the heat sink according to the invention makes use, on the one hand, of the good thermal conductivity of known copper coolers, and on the other hand, the at least one intermediate layer between two copper layers makes of a material which essentially consists of one or more of the materials (molybdenum) , Wolf ram, aluminum nitride, pyrolytic graphite, which has a thermal conductivity ( ⁇ ) greater than 100 W / m • K, and a suitable coefficient of intermediate layer structures is used to set a coefficient of thermal expansion which is based on the solder layer on the mounting surface adjusts connected component.
  • the stresses resulting from the soldering process during the assembly of the component particularly with regard to the assembly of diode laser bars, due to widely differing thermal expansions are eliminated.
  • the cooler can still be constructed from electrically conductive material, which is present in the form of copper layers, no thick metallizations on the contacts and connecting surfaces are required. There is no risk of whisker and hillock formation, as is the case with electrically insulating materials such as silicon.
  • the stresses that may build up in the heat sink or between the heat sink and the component are reduced to such an extent that failures can largely be excluded.
  • a layer with the structure for example three copper layers and two intermediate layers made of the materials molybdenum, tungsten, aluminum nitride, pyrolytic graphite with a thermal conductivity ( ⁇ ) greater than 100 W / m • K, the coefficient of thermal expansion should be on the mounting area of the component does not differ by more than 10% from that of the component to be assembled.
  • the intermediate layer between the at least two copper layers is preferably formed from a pyrolytic graphite with a high thermal conductivity when the highest optical output powers of the diode lasers are required by the most effective heat dissipation.
  • Interlayers made of molybdenum are to be preferred if especially flat emitter lines are required for the optical beam shaping of diode laser radiation.
  • the intermediate layers can be structured in order to form cooling channels through which a cooling fluid is optionally passed.
  • Cooling channels of this type particularly in the intermediate layers, have the advantage that, in the case of pyrolytic graphite, the suitable resistance means that the thermal resistance is reduced and the maximum power and service life of diode lasers are increased, in particular when this structuring to the respective copper layers is formed or is open to the copper layers, so that one side of the cooling channel is closed by the adjacent copper layer.
  • intermediate layers should have a thickness of 50 ⁇ m to 700 ⁇ m, but with the proviso that the thickness of an intermediate layer is a maximum of 50% of the total thickness of the heat sink.
  • thin thicknesses of the intermediate layers in the lower part of the specified range are to be preferred, in which case the number of layers should also preferably be increased accordingly in order to achieve a sufficiently graded adaptation of the thermal expansion coefficients.
  • the cover layer of the heat sink which carries the solder layer, via which the electronic component is attached to the heat sink, is formed from oxygen-free copper.
  • a surface of the heat sink is provided which both enables surface finishing by means of diamond processing and also serves as the basis for the deposition of pinholes (post-stitch pores) free metallization layers.
  • the thickness of the cover layer is 50 to 600 ⁇ m, preferably about 100 ⁇ m. The cover layer should therefore be kept very thin in order to keep the influence of its own thermal expansion low; with thicker cover layers it can happen that the thermal expansion on the mounting surface increases.
  • an outer layer is applied on the side opposite the mounting surface, which consists of a Material is formed according to the intermediate layers. In this way, laying or bulging of the heat sink due to different expansions on the top and bottom by this layer can be counteracted, so that an extremely dimensionally stable heat sink is achieved with such an outer layer on the side opposite the mounting surface.
  • a symmetrical structure around a central plane of the layer structure is therefore preferred.
  • the entire heat sink may have a closed copper surface.
  • the intermediate layers are made slightly shorter in their lateral direction than the copper layers, so that grooves with the set-back edges of the intermediate layers are formed between the end edges of the copper layers . These remaining gaps can then be filled with copper, preferably by galvanic deposition.
  • the individual layers that form the heat sink are preferably connected by a diffusion welding process. This creates a very durable connection
  • FIG. 1 shows a schematic illustration of a heat sink according to the invention with an intermediate layer and an indicated diode laser bar for mounting on the heat sink,
  • FIG. 2 the heat sink of FIG. 1 with further layers on its underside
  • FIG. 3 schematically shows a copper heat sink with a semiconductor component arranged thereon to explain the possible pressure stresses that occur
  • FIG. 4 shows a structure corresponding to FIG. 3 to explain the bending stresses that occur
  • Figure 5 is a schematic sectional view of a multi-layer heat sink with an additional copper coating in the region of the shortened intermediate layers.
  • the heat sink as shown in FIG. 1, has an upper copper layer 2, an intermediate layer 3 and a lower copper layer 4. While the two copper layers 2, 4 have a thickness d ⁇ of approximately 50 ⁇ m in this exemplary embodiment, the inserted intermediate layer 3 is implemented in a thickness d z of approximately 300 ⁇ m.
  • the material for the intermediate layer 3 can be molybdenum, tungsten, aluminum nitride or a pyrolytic graphite, which has a thermal conductivity ( ⁇ ) greater than 100 W / m • K. As in the example shown in FIG.
  • the intermediate layer 3 is preferably formed from molybdenum or pyrolytic graphite with a high thermal conductivity, since high optical output powers of the diode lasers are thereby achieved through the effective heat dissipation.
  • a mounting surface 5 is provided which carries a solder layer for a component to be soldered. The size of this mounting surface 5 corresponds to the base surface of the component 6, which in the illustration in FIG. 1 is a diode laser bar 6, which is indicated schematically above the mounting surface 5 in FIG. 1.
  • a cover layer made of oxygen-free copper is additionally provided below the solder layer forming the mounting surface 5.
  • This cover layer serves to enable diamond ultra-precision machining and is also the basis for the chemo-galvanic machining processes.
  • This cover layer serves to enable diamond ultra-precision machining and is also the basis for the chemo-galvanic machining processes.
  • In the rear area of the heat sink 1 there are two recesses 7, each of which forms an inlet and outlet opening for an inner channel structure, not shown, through which a fluid, for example water, is passed for active cooling. These recesses or the channel structure also extend through the intermediate layer 3, as can be seen in FIG. 1.
  • the laser diode bar 6 mounted on the mounting surface 5 with a heat emission during operation of up to 1 KW / cm 2 can thus be held and cooled reliably.
  • thermomechanical stresses arise which affect the semiconductor component can damage.
  • These voltages are caused on the one hand by the heating of the heat sink, which is between 30 ° C and 50 ° C during operation, and on the other hand during the soldering process, in which the heat sink is briefly heated up to about 180 ° C, but after that the Diode cools down to ambient temperature again within seconds.
  • the semiconductor component is usually not actively cooled during such a soldering process.
  • the components then expanded to different extents and then contract again accordingly during cooling with solder that has already solidified. This creates a stress state in the connection plane between the semiconductor component 9 and the copper heat sink 8, as is to be indicated by the arrows 10.
  • the semiconductor component or the diode laser ingot is further stressed due to the different expansion or contraction of the two components, in particular due to the strong temperature fluctuations during the soldering process for mounting the semiconductor component 9 on the heat sink 8, as shown in FIG. 4.
  • the coefficient of thermal expansion on the mounting surface 5 of the heat sink is set such that it is dependent on the thermal expansion coefficient of the mounting surface of a building to be assembled ⁇ partly deviates no more than 10%.
  • the intermediate layer 3 in turn has a 50 ⁇ m thick copper layer on its underside 4.
  • FIG. 2 shows a structure of the heat sink 11, in which on the A further copper layer 12 is provided on the underside, which carries on its underside a further cooling body part 13 which corresponds in its structure to the upper heat sink part 1, which supports the mounting surface 5, again from an upper copper layer 2, an intermediate layer 3 and a lower copper layer 4 is formed.
  • This symmetrical structure of the cooling body 11 around the central, further copper layer 12 counteracts a curvature of the body 11, in particular during the soldering step for fastening the charger diode bar 6 on the mounting surface 5. While the layer structure is shown schematically in FIG.
  • the lower, thin copper layer 4 or the upper, thin copper layer 2 of the heat sink part 13 can be formed in one piece together with the further copper layer 12.
  • the structural structure shown in the form that the two intermediate layers 3 each carry the thin copper layers 4 which face the further copper layer 12 has the advantage that the diffusion welding can be carried out more easily with the further copper layer 12
  • Structures from which the heat sink 11 is constructed can each be produced as preliminary products in the form of the intermediate layers 3 with the upper and lower copper layers 2, 4 applied thereon, which serve for the connection and can be applied, for example, by electroplating. They can then simply be structured with one another before the connection in order to form the cooling channels.
  • the heat sink 21 in this embodiment is made up of two intermediate layers 3, for example made of molybdenum, between a copper layer 22 in each case, the Heatsink 21 ends on its underside with a copper layer 22, likewise on his Top, which is directed towards the semiconductor element 9, closes with a copper layer 22.
  • This uppermost copper layer 22 is a cover layer made of oxygen-free copper with a thickness of approximately 5 ⁇ m, which carries the solder layer 23, via which the component 9 is soldered.
  • the individual intermediate layers 3 have a shorter lateral extension than the respective copper layers 22, so that a type of channel is formed in each case.
  • This channel or depression is filled with copper 24, which is, for example, electrodeposited, so that a closed copper layer results on the outside of the heat sink 21.
  • copper 24 is, for example, electrodeposited, so that a closed copper layer results on the outside of the heat sink 21.
  • Such a copper coating of the entire heat sink 21 may be necessary if machining of the outer surfaces is necessary and if the intermediate layers are not electrically conductive.
  • the above-mentioned layer of oxygen-free copper, which carries the solder layer 23, serves to enable good processing and serves as a layer for the deposition of metallization layers, free of pinholes.
  • the intermediate layers 3 can, for example, be metallized with copper in order to facilitate the connection to the copper layers 22.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Dissipateur thermique à surface de montage pour composant électronique, en particulier pour élément à semi-conducteur, ledit composant pouvant être monté, dans la zone de la surface, au moyen d'un joint brasé dont le film de brasure est d'une épaisseur inférieure à 100 microns. Ce dissipateur est essentiellement en cuivre, présente une structure stratifiée et une faible hauteur comparativement aux dimensions de sa surface. Ce dissipateur est caractérisé en ce qu'au moins entre deux couches de cuivre est insérée une couche intermédiaire, essentiellement constituée d'un ou de plusieurs des matériaux ci-après: molybdène, tungstène, nitrure d'aluminium, graphite pyrolytique d'une conductivité thermique supérieure à 100 W/m.K, en ce que les épaisseurs des couches intermédiaires sont telles que le coefficient de dilatation thermique de la surface de montage d'un composant ne diffère pas du coefficient de dilatation thermique du composant de plus de 10 %.
PCT/EP1997/000439 1996-02-14 1997-02-01 Dissipateur thermique a surface de montage pour composant electronique WO1997030494A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19605302A DE19605302A1 (de) 1996-02-14 1996-02-14 Kühlkörper mit einer Montagefläche für ein elektronisches Bauteil
DE19605302.1 1996-02-14

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WO1997030494A1 true WO1997030494A1 (fr) 1997-08-21

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US6240116B1 (en) 1997-08-14 2001-05-29 Sdl, Inc. Laser diode array assemblies with optimized brightness conservation
US7369589B2 (en) 2003-12-22 2008-05-06 Jenoptik Laserdiode Gmbh Diode laser subelement and arrangements with such diode laser subelement
JP2008518383A (ja) * 2004-10-21 2008-05-29 松下電器産業株式会社 照明装置
US7567597B2 (en) 2002-07-30 2009-07-28 Osram Gmbh Semiconductor device with a cooling element
CN111149264A (zh) * 2017-09-28 2020-05-12 罗杰斯德国有限公司 用于冷却电构件的冷却设备和用于制造冷却设备的方法
CN114552370A (zh) * 2022-02-21 2022-05-27 桂林市啄木鸟医疗器械有限公司 半导体激光器及半导体激光器的制备方法

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DE19821544A1 (de) * 1998-05-14 1999-12-16 Jenoptik Jena Gmbh Diodenlaserbauelement und Verfahren zu dessen Herstellung
RU2172538C2 (ru) * 1999-09-01 2001-08-20 Открытое акционерное общество "Ракетно-космическая корпорация "Энергия" им. С.П. Королева" Теплопроводная прокладка
DE19956565B4 (de) * 1999-11-24 2006-03-30 Laserline Gesellschaft für Entwicklung und Vertrieb von Diodenlasern mbH Verfahren zum Herstellen einer Wärmesenke für elektrische Bauelemente
DE10011892A1 (de) 2000-03-03 2001-09-20 Jenoptik Jena Gmbh Montagesubstrat und Wärmesenke für Hochleistungsdiodenlaserbarren
AT5972U1 (de) * 2002-03-22 2003-02-25 Plansee Ag Package mit substrat hoher wärmeleitfähigkeit
DE102004015446B4 (de) * 2003-12-30 2010-08-05 Osram Opto Semiconductors Gmbh Wärmesenke für ein diskretes Halbleiterbauelement und Verfahren zu dessen Herstellung sowie elektronische Komponente
JP3862737B1 (ja) * 2005-10-18 2006-12-27 栄樹 津島 クラッド材およびその製造方法、クラッド材の成型方法、クラッド材を用いた放熱基板
JP4558012B2 (ja) 2007-07-05 2010-10-06 株式会社東芝 半導体パッケージ用放熱プレート及び半導体装置
AT513520A1 (de) * 2012-10-24 2014-05-15 F & S Vermögensverwaltungs Gmbh Kühlvorrichtung Halbleiter-Bauelement
CN108369986B (zh) * 2015-11-03 2020-12-25 Ade弗托恩埃克萨有限公司 Led照明模块
DE102018210141A1 (de) * 2018-06-21 2019-12-24 Trumpf Photonics, Inc. Diodenlaseranordnung und Verfahren zur Herstellung einer Diodenlaseranordnung
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* Cited by examiner, † Cited by third party
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US6240116B1 (en) 1997-08-14 2001-05-29 Sdl, Inc. Laser diode array assemblies with optimized brightness conservation
US7567597B2 (en) 2002-07-30 2009-07-28 Osram Gmbh Semiconductor device with a cooling element
US7369589B2 (en) 2003-12-22 2008-05-06 Jenoptik Laserdiode Gmbh Diode laser subelement and arrangements with such diode laser subelement
JP2008518383A (ja) * 2004-10-21 2008-05-29 松下電器産業株式会社 照明装置
JP4919488B2 (ja) * 2004-10-21 2012-04-18 パナソニック株式会社 照明装置
CN111149264A (zh) * 2017-09-28 2020-05-12 罗杰斯德国有限公司 用于冷却电构件的冷却设备和用于制造冷却设备的方法
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CN114552370A (zh) * 2022-02-21 2022-05-27 桂林市啄木鸟医疗器械有限公司 半导体激光器及半导体激光器的制备方法

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