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WO1998003997A1 - Refroidissement en circuit ferme par un liquide dans des modules r.f. - Google Patents

Refroidissement en circuit ferme par un liquide dans des modules r.f. Download PDF

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Publication number
WO1998003997A1
WO1998003997A1 PCT/US1997/013326 US9713326W WO9803997A1 WO 1998003997 A1 WO1998003997 A1 WO 1998003997A1 US 9713326 W US9713326 W US 9713326W WO 9803997 A1 WO9803997 A1 WO 9803997A1
Authority
WO
WIPO (PCT)
Prior art keywords
assembly according
heat
heat exchanger
pump
microchannels
Prior art date
Application number
PCT/US1997/013326
Other languages
English (en)
Inventor
Robin E. Hamilton
Paul G. Kennedy
Original Assignee
Northrop Grumman Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northrop Grumman Corporation filed Critical Northrop Grumman Corporation
Publication of WO1998003997A1 publication Critical patent/WO1998003997A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to convection cooling of high power semiconductor devices and more particularly to a module including a self-contained coolant loop having a microchannel heat sink for cooling relatively high power semiconductive devices, such as RF power transistors.
  • the number of transistors and related peripheral circuits that are required in such a solid state transmitter is a function of the thermal capacitance of the transistor device packaging and their associated air cooled heat sinks.
  • the packaging approach utilized by the ARSR-4 solid state transmitter has been embraced by the industry for several years due to its simplicity, low cost and customer acceptance.
  • FIG. 1 is illustrative of an air cooled RF module 10 for an ARSR-4 transmitter.
  • the module 10 is shown including a heat generating transistor chip 12; a ceramic substrate 14; a metallic mounting flange 16; a multilayer soft aluminum clad substrate 18 ; a metallic ground plane 20; and a cold plate 22 which is a bonded sandwich of aluminum finstock 24 and sheet metal 26.
  • a flow of cooling air directed to the finstock 24 is shown by reference numeral 28.
  • the flange 16 is mounted on the ground plane 20 where it is bolted to the substrate 18.
  • the groundplane 20 is in turn bolted to the air cooled coldplate 22.
  • the maximum device junction temperature of the transistor devices, not shown, located on the chip 12, as dictated by system reliability studies, is typically between 125 and 135°C.
  • a conventional packaging and realizable air flow delivery limit the maximum heat dissipation of a silicon RF transistor packet such as shown in Figure 1, to about 10 watts.
  • Four design features typically drive the temperature gradient occurring in such a structure. These are the mass of air flow 28, the efficiency of the coldplate 22, the device to substrate interface, i.e. elements 16, 18 and 20, and the internal temperature rise of the chip 12.
  • an ARSR-4 transmitter generates over 12 kilowatts average heat dissipation.
  • a blower, not shown, used to cool this very large system is a 20 HP piece of apparatus rated to deliver approximately 10,000 cubic feet per minute of air at 8 inches of water pressure drop.
  • Such a blower is excessively large, expensive and noisy. In fact, such a blower typically requires that it to be housed in its own cabinet.
  • a closed loop liquid cooling arrangement in conjunction with an air-to-liquid heat exchanger integrated into a module which is easily installed and removed as a self-contained unit and furthermore includes a microchannel heat sink which is directly integrated into the chip containing the heat- generating components.
  • Fluid coolant is forced through a plurality of microchannels formed in the heat sink by a micropump located on a substrate formed on a ground plane/heat exchanger which includes coolant input and output ducts coupled to the microchannels.
  • the ground plane/heat exchanger additionally includes a set of heat exchanger fins which receive air flow from an external blower or fan.
  • Figure 1 is an exploded parts diagram depicting a semiconductor component cooling system according to the known prior art
  • FIG 2 is a mechanical schematic diagram broadly illustrative of a modular liquid cooling system in accordance with the present invention
  • Figure 3 an exploded parts diagram illustrative of the preferred embodiment of the invention.
  • Figure 4 is a perspective view of the unit shown in Figure 3 mounted on the ground plane and including a microchannel heat sink utilized for convection cooling of a plurality of semiconductor devices mounted thereon.
  • reference numeral 30 denotes a module 30 which includes a load/heat sink 32, a heat exchanger 34 and a fluid coolant pump 36. These elements are shown interconnected by coolant fluid flow paths 38, 40 and 42. In addition, a fan 44 is depicted for forcing air past the heat exchanger 34.
  • the load/heat sink 32 as shown in Figures 3 and 4 , is comprised of a body of material having high thermal conductivity which is attached to a ceramic substrate 48. The ceramic substrate 48 is in turn attached to a metal flange member 50.
  • the flange 50 as shown in Figure 4, includes a pair of open-ended U-shaped slots 52 which are used for being bolted to the soft substrate portion 35 of a circuit board or groundplane member 54 which doubles as an air-to-liquid heat exchanger.
  • the groundplane 54 also has a set of heat exchanger fins 56 depending from the bottom portion thereof; however, now the groundplane 54 also includes fluid flow paths or conduits 40 and 42 leading to and from a liquid coolant feed pump 36 located on the soft substrate 35.
  • the ceramic substrate 48 seals the microchannels 62 and serves as a mechanical fluid manifold together with the metal flange 50 and serves to supply a liquid coolant 63 from the pump 36 in and out of the microchannel grooves 62 via pairs of openings 47, 49, and 50, 53.
  • 0-ring seals 55 and 57 seal coolant being delivered from and to the pump 36 via the fluid flow paths 40 and 42.
  • a coolant 63 such as FC-43 "Fluorinert" brand liquid manufactured by the 3M Company, comprises an optimum type of coolant liquid because of its high boiling point temperature (174 °C) and its non-corrosive nature.
  • the pump 36 typically comprises a microminiature piezoelectric diaphragm pump such as shown and described in U.S.
  • the pump 36 may comprise a non-mechanical magnetic micropump such as shown and described in the above-referenced copending application Serial No. 08/681,345 (WE58,812), entitled “Non-Mechanical Magnetic Pump For Liquid Cooling", filed in the name of Robin E. Hamilton et al. on July 22, 1996.
  • the body 46 of the heat sink 32 is shown including a semiconductor chip 58 having integrated therewith a plurality of semiconductor devices 60 which may be, for example, high powered RF bipolar transistors.
  • Beneath semiconductor chip 58 and the semiconductor devices 60 is a plurality of mutually parallel close-ended microchannels 62 of rectangular cross section formed in the material from which the heat sink body 46 is formed.
  • Each microchannel 62 comprises an elongated linear groove ranging in width between 0.001 in. and 0.004 in., a depth ranging between 0.004 in. and 0.01 in. , with the spacing therebetween ranging between 0.001 in. and 0.003 in.
  • the rectangular spacing sections 64 separating the microchannels 62 act as fins for conducting heat generated by the semiconductor devices 60 to the coolant 63 which is pumped through the microchannel 62 by the micropump 36.
  • the heat generating semiconductors e.g. transistors
  • the microchannels 62 can be inexpensively etched, using standard photolithographic processes, in the body of silicon, for example.
  • Microchannel cooling may be integrated into different electrical components and even with integrated circuits up to wafer scale level of integration. It can also be used with various semiconductors such as silicon, silicon carbide, germanium and gallium arsenide which in turn are bonded to substrates such as, but not constrained to, beryllium oxide and aluminum nitride.
  • a microchannel heat sink 32 is far more efficient than conventional liquid heat sinks, for example, as shown in Figure 1.
  • the fundamental difference between a microchannel heat sink and a conventional heat sink is the dimensions of the channels 62 ( Figure 4) .
  • the use of very narrow microchannels enhances heat transfers in two ways. First, narrow channels can be closely spaced, providing a large number of fins 64, with a combined surface area much greater than the "foot print" of the heat sink body 46. In addition, the small hydraulic diameters of the narrow passages result in relatively high convection heat transfer coefficients.
  • the microchannels 62 provide an increase in the maximum power density for a given operating temperature and thus are ideal for direct cooling of hot components.
  • a self- contained coolant loop with a microchannel heat sink coupled to a micropump and an air-to-liquid heat exchanger built right into a module which provides the thermal cooling efficiency of a liquid system while offering the simplicity of an air-cooled package.
  • a structure is provided which can cool electronic devices with twice the heat dissipation than previously practical with air-cooled designs. Integration of higher power components into the electronics thus minimizes parts count, and reduces the quantity of peripheral circuits.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Circuit fermé de fluide de refroidissement autonome pour des dispositifs à semi-conducteurs, tels que des transistors de haute puissance. Ce circuit de fluide de refroidissement comprend un dissipateur de chaleur (32) à microcanaux, une micropompe (36) et un échangeur de chaleur air-liquide (34) intégré à un module remplaçable (30).
PCT/US1997/013326 1996-07-22 1997-07-22 Refroidissement en circuit ferme par un liquide dans des modules r.f. WO1998003997A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68134496A 1996-07-22 1996-07-22
US08/681,344 1996-07-22

Publications (1)

Publication Number Publication Date
WO1998003997A1 true WO1998003997A1 (fr) 1998-01-29

Family

ID=24734879

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/013326 WO1998003997A1 (fr) 1996-07-22 1997-07-22 Refroidissement en circuit ferme par un liquide dans des modules r.f.

Country Status (1)

Country Link
WO (1) WO1998003997A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002028160A3 (fr) * 2000-09-29 2002-06-27 Nanostream Inc Dispositifs microfluidiques pour transfert thermique
WO2002039241A3 (fr) * 2000-11-13 2003-02-27 P21 Gmbh Composant electrique
US6629425B2 (en) 2000-07-24 2003-10-07 Micron Technology, Inc. MEMS heat pumps for integrated circuit heat dissipation
EP1576320A4 (fr) * 2001-09-28 2005-10-05 Univ Leland Stanford Junior Systeme de refroidissement electro-osmotique a micro-canaux
EP1622198A2 (fr) 2004-07-28 2006-02-01 Brother Kogyo Kabushiki Kaisha Substrat avec composant électronique et tête d'éjection de liquide avec ce substrat
US7018917B2 (en) 2003-11-20 2006-03-28 Asm International N.V. Multilayer metallization
WO2007002766A3 (fr) * 2005-06-27 2007-04-26 Intel Corp Transpondeur optique avec transfert de chaleur actif
DE102007044754A1 (de) * 2007-09-19 2009-04-09 Robert Bosch Gmbh Verfahren zur Herstellung einer elektronischen Baugruppe sowie elektronische Baugruppe
WO2010086282A1 (fr) * 2009-01-30 2010-08-05 Robert Bosch Gmbh Pièce composite et procédé de fabrication d'une pièce composite
WO2014182380A1 (fr) * 2013-05-10 2014-11-13 Raytheon Company Procede pour creer une interface etanche de soudre selective pour un systeme de refroidissement de circuit integre
US9012278B2 (en) 2013-10-03 2015-04-21 Asm Ip Holding B.V. Method of making a wire-based semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4894709A (en) * 1988-03-09 1990-01-16 Massachusetts Institute Of Technology Forced-convection, liquid-cooled, microchannel heat sinks
US5316077A (en) * 1992-12-09 1994-05-31 Eaton Corporation Heat sink for electrical circuit components
WO1995008844A1 (fr) * 1993-09-21 1995-03-30 Siemens Aktiengesellschaft Systeme refrigerant pour un module de puissance a semi-conducteurs
EP0709885A2 (fr) * 1994-10-31 1996-05-01 AT&T Corp. Plaque à circuits imprimés comprenant un système de refroidissement intégré à boucle fermée

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4894709A (en) * 1988-03-09 1990-01-16 Massachusetts Institute Of Technology Forced-convection, liquid-cooled, microchannel heat sinks
US5316077A (en) * 1992-12-09 1994-05-31 Eaton Corporation Heat sink for electrical circuit components
WO1995008844A1 (fr) * 1993-09-21 1995-03-30 Siemens Aktiengesellschaft Systeme refrigerant pour un module de puissance a semi-conducteurs
EP0709885A2 (fr) * 1994-10-31 1996-05-01 AT&T Corp. Plaque à circuits imprimés comprenant un système de refroidissement intégré à boucle fermée

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"HERMETICALLY SEALED, FIELD REMOVABLE MODULE HAVING AN INTEGRAL PUMP AND COOLANT HEAT EXCHANGER FOR FORCED CONVECTION IMMERSION COOLING OF ELECTRONIC CIRCUIT MODULES", IBM TECHNICAL DISCLOSURE BULLETIN., vol. 35, no. 4B, September 1992 (1992-09-01), NEW YORK US, pages 443 - 444, XP002046249 *

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7107777B2 (en) 2000-07-24 2006-09-19 Micro Technology, Inc. MEMS heat pumps for integrated circuit heat dissipation
US6629425B2 (en) 2000-07-24 2003-10-07 Micron Technology, Inc. MEMS heat pumps for integrated circuit heat dissipation
SG105459A1 (en) * 2000-07-24 2004-08-27 Micron Technology Inc Mems heat pumps for integrated circuit heat dissipation
US7084004B2 (en) 2000-07-24 2006-08-01 Micron Technology, Inc. MEMS heat pumps for integrated circuit heat dissipation
US6501654B2 (en) 2000-09-29 2002-12-31 Nanostream, Inc. Microfluidic devices for heat transfer
WO2002028160A3 (fr) * 2000-09-29 2002-06-27 Nanostream Inc Dispositifs microfluidiques pour transfert thermique
WO2002039241A3 (fr) * 2000-11-13 2003-02-27 P21 Gmbh Composant electrique
EP1576320A4 (fr) * 2001-09-28 2005-10-05 Univ Leland Stanford Junior Systeme de refroidissement electro-osmotique a micro-canaux
US7018917B2 (en) 2003-11-20 2006-03-28 Asm International N.V. Multilayer metallization
EP1622198A3 (fr) * 2004-07-28 2007-04-11 Brother Kogyo Kabushiki Kaisha Substrat avec composant électronique et tête d'éjection de liquide avec ce substrat
EP1622198A2 (fr) 2004-07-28 2006-02-01 Brother Kogyo Kabushiki Kaisha Substrat avec composant électronique et tête d'éjection de liquide avec ce substrat
US7352591B2 (en) 2004-07-28 2008-04-01 Brother Kogyo Kabushiki Kaisha Substrate mounted with electronic element thereon and liquid ejection head including the substrate
US7558071B2 (en) 2004-07-28 2009-07-07 Brother Kogyo Kabushiki Kaisha Substrate mounted with electronic element thereon
WO2007002766A3 (fr) * 2005-06-27 2007-04-26 Intel Corp Transpondeur optique avec transfert de chaleur actif
US7457126B2 (en) 2005-06-27 2008-11-25 Intel Corporation Optical transponder with active heat transfer
DE102007044754A1 (de) * 2007-09-19 2009-04-09 Robert Bosch Gmbh Verfahren zur Herstellung einer elektronischen Baugruppe sowie elektronische Baugruppe
WO2010086282A1 (fr) * 2009-01-30 2010-08-05 Robert Bosch Gmbh Pièce composite et procédé de fabrication d'une pièce composite
US8730676B2 (en) 2009-01-30 2014-05-20 Robert Bosch Gmbh Composite component and method for producing a composite component
WO2014182380A1 (fr) * 2013-05-10 2014-11-13 Raytheon Company Procede pour creer une interface etanche de soudre selective pour un systeme de refroidissement de circuit integre
US8987892B2 (en) 2013-05-10 2015-03-24 Raytheon Company Method for creating a selective solder seal interface for an integrated circuit cooling system
US9012278B2 (en) 2013-10-03 2015-04-21 Asm Ip Holding B.V. Method of making a wire-based semiconductor device
US9553148B2 (en) 2013-10-03 2017-01-24 Asm Ip Holding B.V. Method of making a wire-based semiconductor device

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