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WO1999048138A1 - Distributeur de flux gazeux laminaire et uniforme sur une grande surface - Google Patents

Distributeur de flux gazeux laminaire et uniforme sur une grande surface Download PDF

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Publication number
WO1999048138A1
WO1999048138A1 PCT/US1999/003929 US9903929W WO9948138A1 WO 1999048138 A1 WO1999048138 A1 WO 1999048138A1 US 9903929 W US9903929 W US 9903929W WO 9948138 A1 WO9948138 A1 WO 9948138A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas flow
gas
dispenser
flow dispenser
equalization
Prior art date
Application number
PCT/US1999/003929
Other languages
English (en)
Inventor
Robert P. Mandal
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO1999048138A1 publication Critical patent/WO1999048138A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0486—Operating the coating or treatment in a controlled atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating

Definitions

  • This invention relates generally to semiconductor integrated circuit wafer processing, and more particularly to a gas dispenser to provide large area uniform laminar gas flow into semiconductor processing equipment.
  • gas flow dispensers sometimes called “showerheads”
  • Some advanced processing modules require gas flow dispensers which can accommodate flow rates in excess of 4 liters per second while maintaining laminar areal gas flow uniformity across the dispensing face.
  • Spin-cast chambers in which polymer films such as photoresist films are formed onto the surface of a semiconductor wafer, are one type of advanced processing module that require such high performance gas dispensers.
  • an amount of a polymer fluid is applied to the center of a spinning wafer. Centrifugal forces cause the polymer fluid to spread towards the outer edges of the spinning wafer, coating the surface of the wafer with a polymer film as it spreads.
  • solvent from the polymer fluid tends to evaporate as it spreads, causing the polymer fluid to become more viscous and the film to become more thick towards the edges.
  • spin-cast chambers such as the one described in U.S. Patent No.
  • 5,472,502 incorporate a showerhead to dispense a gas mixture containing a low concentration of solvent vapors into the volume immediately adjacent to the semiconductor wafer surface.
  • the presence of the solvent vapors slows the evaporation of solvent from the polymer fluid, thus maintaining the viscosity and uniformity of the polymer fluid as it spreads to the edges of the wafer.
  • polymer fluids are highly susceptible to areal variances in gas flow velocities and pressures. Such areal variances diminish the uniformity of the polymer film's thickness across the substrate.
  • diminished film thickness uniformity in turn diminishes the accuracy and reproducibility of submicron feature critical dimensions and thus good integrated circuit yields.
  • film thickness uniformity on the order of less than 10 A variance for films of 7000-12,000 A thickness. This translates into a variance of no more than roughly one (short axis) molecular diameter in 1000.
  • FIG. 1 A illustrates in cross-section a typical showerhead gas dispenser found in the prior art.
  • the showerhead comprises a housing 10 with an inlet 12 for gas and a gas dispersing plate 14 having a plurality of holes 16a-c opposite the gas inlet 12.
  • Gas 18 entering through the gas inlet 12 travels through the interior of the housing, as shown by the arrows 19a-c, and is dispersed through the plurality of holes 16a-c as an array of individual gas jets 20a-c.
  • the individual streams of gas 20a-c have very high areal variances in gas flow velocities and pressures, making the prior art gas dispensers incapable of meeting the extreme demands of many advanced wafer processing modules.
  • FIG. IB One way to minimize such areal variances, shown in Figure IB, is for the gas to pass through a semi-permeable (e.g., solvent-permeable) filter 22 before it exits through the plurality of holes 24a-c.
  • the filter 22 can retain condensables, thereby preventing rapid flow rates and possibly contaminating the gas flow composition.
  • showerhead gas dispensers of this type can achieve areal flow uniformity only with an accompanying loss in pressure between the gas entering and the gas exiting the dispenser, which in turn limits the throughput of gas through this type of dispenser.
  • a gas flow dispenser comprises a first stage, providing a rough dispersal of gas flow from a small diameter source to the area desired, and at least one subsequent stage, providing equalization of gas pressure and thus gas flow without significant reduction in gas pressure. Successive stages, if used, further refine gas flow uniformity without significant loss in gas pressure, thereby dispensing gas with high flow uniformity while allowing high flow rates.
  • a gas flow dispenser comprises a housing, into which is placed a gas dispersing plate followed by at least one gas flow equalization element.
  • the gas dispersing plate is separated from the first gas flow equalization element by a spacer element, and successive gas flow equalization elements, if used, are similarly separated from one another by a spacer element.
  • the gas flow equalization elements presents minimal impedance to forward gas flow and essentially zero impedance to lateral gas flow, allowing the gas pressure to equalize in the volume between the gas dispersing plate and the first gas flow equalization element and in the volume between successive gas flow equalization elements.
  • Figure 1 A shows in cross-section a gas dispenser of the prior art.
  • Figure 1 B shows in cross-section another gas dispenser of the prior art.
  • Figure 2 is a cross-sectional view of one embodiment of a gas flow dispenser assembled in accordance with the present invention.
  • Figure 3 A shows the plurality of holes of the gas dispersing plate in a symmetric pattern in accordance with one embodiment of the present invention.
  • Figures 3B and 3C are cross-sectional views of two embodiments of a gas dispersing plate.
  • Figure 4 shows one embodiment of a gas flow equalization element.
  • Figure 5 shows a cross-sectional view of the gas flow equalization element shown in Figure 4.
  • a gas flow dispenser in accordance with the present invention uses a multistage construction to disperse gas having highly uniform velocities and pressures across the dispensing face.
  • the multistage construction imparts manufacturing flexibility, as each stage can be manufactured individually. The individual stages then can be assembled to meet specific processing requirements.
  • a gas flow is introduced at a given pressure into the gas flow dispenser through a relatively small diameter source and enters first into a gas dispersing stage.
  • the gas dispersing stage roughly spreads the gas flow over the cross-sectional area of the gas flow dispenser. This rough dispersal typically spreads the gas flow unevenly, such that the gas pressure across the cross-sectional area of the gas flow dispenser has very little uniformity.
  • the gas flow After passing through the gas dispersing stage, the gas flow enters into a gas pressure equalization stage in which the gas flow encounters minimal impedance in a forward direction and essentially zero impedance in a lateral direction. This allows the gas pressure, and thus the gas flow rate, to equalize with minimal loss in gas pressure. Successive gas equalization stages can be used to further refine gas flow uniformity until the gas flow exiting the gas flow dispenser achieves laminar flow within a few millimeters from the dispensing face of the gas flow dispenser.
  • Figure 2 illustrates in cross-section one embodiment of a gas flow dispenser of the present invention.
  • the embodiment shown 28 has three stages — a gas dispersal stage and two successive gas pressure equalization stages.
  • the gas flow 30 is introduced into the gas flow dispenser through an inlet 32 and enters into the gas dispersal stage.
  • the gas dispersal stage comprises a gas dispersing plate 34 having a plurality of holes 36a-f.
  • the entering gas flow 30 is dispersed through the plurality of holes 36a-f, as shown by the arrows 37a-f.
  • each gas pressure equalization stage comprises a spacer element 38, 42 and a gas flow equalization element 40, 44.
  • the first spacer element 38 serves to separate the first gas flow equalization element 40 from the gas dispersing plate 34.
  • the dispersed gas flow 37a-f encounters minimal impedance in the forward direction (i.e., in the direction of the arrows) and essentially zero impedance in the lateral direction (i.e., in the direction perpendicular to the arrows).
  • the second gas pressure equalization stage comprises a spacer element 42 and a gas flow equalization element 44.
  • the second spacer element 42 serves to separate the second gas flow equalization element 44 from the first gas flow equalization element 40.
  • the gas flow entering the second gas pressure equalization stage encounters minimal impedance in the forward direction and essentially zero impedance in the lateral direction.
  • the gas pressure and consequently gas flow rate are further equalized.
  • the gas flow leaving the dispensing face 46 of the gas flow dispenser has even higher areal gas flow uniformity, as shown by the even thicker arrow 48.
  • gas pressure equalization stages uses two gas pressure equalization stages, but additional gas pressure equalization stages may be added to further refine the gas flow uniformity, or fewer gas pressure equalization stages may be used if a lower level of gas flow uniformity is acceptable. Gas pressure equalization stages may be added successively until the gas flow exiting the gas flow dispenser achieves uniform laminar flow across the cross-sectional area of the gas flow dispenser within a few millimeters of the gas flow dispenser.
  • the cross-sectional area of the gas flow dispenser should be at least equal to the surface area of the wafer to be processed.
  • the gas flow dispenser should have a diameter of at least 300mm, advantageously greater than 300mm.
  • Figures 3 A, 3B and 3C illustrate possible features of a gas dispersing plate 34.
  • the plurality of holes may be laid out in a symmetric pattern 50, as shown in
  • Each of the plurality of holes may be fashioned so as to provide some measure of lateral direction to the gas flow within the gas dispersing plate, which would aid in dispersing the gas flow over the entire cross-sectional area of the gas flow dispenser.
  • Figure 3B shows, in cross-section, one embodiment in which each hole has a conical- shape.
  • each hole may be double- drilled such that the diameter of the exit orifice 52 is greater than the diameter of the inlet orifice 54.
  • the gas dispersing plate is made of a rigid, chemically-resistant material. Suitable materials include polytetrafluoroethylene and polypropylene.
  • FIG. 4 illustrates one embodiment of a gas flow equalization element 40, 44.
  • Figure 5 illustrates the same embodiment in cross-section.
  • This gas flow equalization element shown comprises a fabric 56 mounted onto an open supporting frame 58. A variety of methods may be used to secure the fabric 56 to the supporting frame
  • the fabric 56 is stretched over the supporting frame 58, and a wire segment 60 is pressed over the fabric and into a groove cut into the face of the supporting frame 58, securing the fabric 56 to the supporting frame 58.
  • the fabric 56 has a relatively open structure, such as in a screen or mesh, and comprises a non-porous material that will not trap condensables.
  • the relatively open structure provides minimal impedance to gas flow in a direction pe ⁇ endicular to the face of the gas flow equalization element, as the arrow 62 shows, whereas nothing provides any impedance in a direction parallel 64 to the face of the gas flow equalization element.
  • Suitable non-porous materials include stainless steel, nichrome, and Kevlar.
  • the fabric 56 may comprise a 400 mesh stainless steel fabric, and the supporting frame 58 may comprise a stainless steel ring.
  • the gas flow equalization element can be treated with a vapor-deposited coating of a chemically-resistant mechanically-compliant adherent film, such as Parylene-F, Parylene-N, or polynaphthalene.
  • a chemically-resistant mechanically-compliant adherent film such as Parylene-F, Parylene-N, or polynaphthalene.
  • the fabric can be treated with the vapor- deposited coating before it is secured to the supporting frame.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Fluid Mechanics (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)

Abstract

L'invention concerne un distributeur de flux gazeux faisant appel à une structure à phases multiples pour répartir un gaz doté d'une vitesse et d'une pression hautement uniformes sur toute la face de distribution. On introduit un flux gazeux à une pression donnée dans le distributeur de flux gazeux par une source à diamètre relativement réduit, le flux pénétrant d'abord dans une phase de dispersion de gaz. La phase de dispersion de gaz répartit sensiblement le flux gazeux sur la surface de coupe transversale entière du distributeur de flux gazeux. Après la phase de dispersion de gaz, le flux gazeux pénètre dans une phase d'équilibrage des pressions de gaz dans laquelle le flux gazeux rencontre une impédance minimale dans une direction avant et une impédance essentiellement nulle dans une direction latérale. Cela permet d'équilibrer la pression de gaz et donc le débit de gaz, avec une perte minimale de pression de gaz. On peut utiliser des phases successives d'équilibrage des pressions de gaz pour raffiner d'avantage l'uniformité du flux gazeux, de sorte que le flux gazeux sortant du distributeur de flux gazeux devienne laminaire à quelques millimètres de la face de distribution du distributeur de flux gazeux.
PCT/US1999/003929 1998-03-18 1999-02-23 Distributeur de flux gazeux laminaire et uniforme sur une grande surface WO1999048138A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4439498A 1998-03-18 1998-03-18
US09/044,394 1998-03-18

Publications (1)

Publication Number Publication Date
WO1999048138A1 true WO1999048138A1 (fr) 1999-09-23

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2808224A1 (fr) * 2000-04-26 2001-11-02 Unaxis Balzers Ag Reacteur a plasma hf

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4986216A (en) * 1989-05-10 1991-01-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor manufacturing apparatus
US5010842A (en) * 1988-10-25 1991-04-30 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film
JPH06299356A (ja) * 1993-04-14 1994-10-25 Hitachi Electron Eng Co Ltd 常圧ｃｖｄ装置およびそのクリーニング方法
EP0678903A1 (fr) * 1994-04-20 1995-10-25 Tokyo Electron Limited Méthode et appareil de traitement par plasma
US5581874A (en) * 1994-03-28 1996-12-10 Tokyo Electron Limited Method of forming a bonding portion

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010842A (en) * 1988-10-25 1991-04-30 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film
US4986216A (en) * 1989-05-10 1991-01-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor manufacturing apparatus
JPH06299356A (ja) * 1993-04-14 1994-10-25 Hitachi Electron Eng Co Ltd 常圧ｃｖｄ装置およびそのクリーニング方法
US5581874A (en) * 1994-03-28 1996-12-10 Tokyo Electron Limited Method of forming a bonding portion
EP0678903A1 (fr) * 1994-04-20 1995-10-25 Tokyo Electron Limited Méthode et appareil de traitement par plasma

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 095, no. 001 28 February 1995 (1995-02-28) *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2808224A1 (fr) * 2000-04-26 2001-11-02 Unaxis Balzers Ag Reacteur a plasma hf
US7306829B2 (en) 2000-04-26 2007-12-11 Unaxis Balzers Aktiengesellschaft RF plasma reactor having a distribution chamber with at least one grid
US9045828B2 (en) 2000-04-26 2015-06-02 Tel Solar Ag RF plasma reactor having a distribution chamber with at least one grid

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