[go: up one dir, main page]

WO1999024990A2 - Dispositif de fusion par confinement inertiel electrostatique (iec) a clapet obturateur a emission d'impulsions - Google Patents

Dispositif de fusion par confinement inertiel electrostatique (iec) a clapet obturateur a emission d'impulsions Download PDF

Info

Publication number
WO1999024990A2
WO1999024990A2 PCT/US1998/024034 US9824034W WO9924990A2 WO 1999024990 A2 WO1999024990 A2 WO 1999024990A2 US 9824034 W US9824034 W US 9824034W WO 9924990 A2 WO9924990 A2 WO 9924990A2
Authority
WO
WIPO (PCT)
Prior art keywords
grid
potential
vessel
ions
set forth
Prior art date
Application number
PCT/US1998/024034
Other languages
English (en)
Other versions
WO1999024990A3 (fr
Inventor
George H. Miley
Brian E. Jurczyk
Yibin Gu
Robert A. Stubbers
Michael J. Williams
Original Assignee
The Board Of Trustees Of The University Of Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Board Of Trustees Of The University Of Illinois filed Critical The Board Of Trustees Of The University Of Illinois
Priority to KR1020007005167A priority Critical patent/KR20010032046A/ko
Priority to CA002310071A priority patent/CA2310071A1/fr
Priority to IL13609998A priority patent/IL136099A0/xx
Priority to EEP200000528A priority patent/EE200000528A/xx
Priority to AU19958/99A priority patent/AU1995899A/en
Priority to JP2000519899A priority patent/JP2001523010A/ja
Priority to EP98964691A priority patent/EP1048038A2/fr
Priority to HU0100180A priority patent/HUP0100180A1/hu
Publication of WO1999024990A2 publication Critical patent/WO1999024990A2/fr
Publication of WO1999024990A3 publication Critical patent/WO1999024990A3/fr
Priority to NO20002437A priority patent/NO20002437L/no

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
    • H05H3/06—Generating neutron beams
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21B—FUSION REACTORS
    • G21B1/00—Thermonuclear fusion reactors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/10—Nuclear fusion reactors

Definitions

  • IEC Inertial Electrostatic Confinement
  • NAA Neutron Activation Analysis
  • a spherical vacuum chamber 2 serving as a grounded anode and having several ports, including a gas input port 3 that is connected to a gas source (not shown) via a gas feed line 4 and a valve 5.
  • the gas input to the vessel is a fusionable gas comprising a single component or a mixture of components such as deuterium, tritium and He-3.
  • a second port 6 is connected to a vacuum pump (not shown)
  • a third port 7 is connected to a high voltage power supply 8 via a high voltage feedthrough 9.
  • a grid 10 at the center of the sphere 2 which may be a wire or vane type structure, has a geometric transparency of preferably 80-97% and is connected to the high voltage source 8, which provides a negative high voltage potential that serves to initiate and maintain a discharge.
  • This in effect, operates as an ion-accelerator, plasma-target unit.
  • An off-the-shelf commercial version now provides a portable, long-lived neutron source with steady-state production levels of 10 6 - 10 7 n/s. Due to its low cost, safety and licensing advantages, these commercial IEC units are intended to replace existing NAA neutron sources such as Californium- 252, and small accelerator solid-target units.
  • a non-neutral, non-Maxwellian plasma is created in an IEC by energetic ions that are accelerated and focussed at a center spot by the spherical grid 10, centered in a vacuum vessel as shown in Figure 1.
  • plasma discharge is formed by imposing a high negative voltage (typically 50-80 kV) on the grid 10 such that ions are created and then extracted from the plasma discharge between the grid 10 and the wall of the vessel 2.
  • a high negative voltage typically 50-80 kV
  • deuterium or deuterium- tritium mixtures are generally employed, giving 2.45MeV or 14 eV neutrons, respectively.
  • gas having a deuterium-helium-3 mixture is employed.
  • a grid design offering an actual transparency that is greater than the geometric transparency and radial alignment of grid openings for the two inner grids, can cause ion beamlets (microchannels) to be formed between the grid 10 openings, creating what is termed the "Star" mode, shown in Figure 2.
  • a dense plasma core region is then formed in the center of the sphere where the beams converge, creating an intense fusion reaction rate in this core region.
  • the microchannels have the dual advantages of aiding ion focussing and minimizing ion-grid collisions.
  • a unique plasma potential structure is created in the IEC plasma if the ion current is sufficient to create a strong virtual anode in the central plasma region. This potential accelerates and focuses electrons in the center core region, forming a virtual cathode, as illustrated in Figure 3.
  • This structure results in a potential distribution across the device, termed a "double" potential well, that is very beneficial to IEC operation since energetic ions trapped in the "well” create a high fusion rate.
  • broadened distribution functions lead to the simplified "double- well” structure of the type shown in Figure 3, where a virtual electrode structure in an idealized IEC configuration with monoenergetic ions and electrons and negligible angular momentum is shown.
  • the potential distribution structure will be broadened as both energy- angle distributions spread out in an actual system implementation.
  • the basic IEC concept employs a grid design that creates a "Star" mode discharge with its ion microchannels. This approach provides simplicity, good ion focusing and improved grid life.
  • the microchannels which form due to the grid potential structure and corresponding ion "optics” , improve ion focusing and lead to the extended grid lifetimes. At high ion currents, this improved focussing also aids the creation of a strong double potential well in the central core region, described earlier, leading to significantly increased fusion reaction rates.
  • a symmetric configuration of the type ultimately needed for high yield operation, is used in present IEC devices that are being commercialized for portable NAA applications.
  • Asymmetric designs are also possible and useful. For example, in a "jet" mode operation, asymmetric beams are trapped in the potential structure and redirected through a "hole” created in it by an enlarged grid opening, as described in PCT International Application No. PCT/US97/19306 , which is incorporated herein by reference.
  • This configuration has possible applications for materials processing and as a low power thruster for space satellite orbit adjustments.
  • Another non-fusion example involves efficient fullerene production from methane, as disclosed in PCT International Application No. PCT/US97/00147, which is incorporated herein by reference.
  • the IEC potential well structure is used to concentrate carbon ions in the deeper center trap, allowing hydrogen ions to move outward, enhancing formation of C-60 chains.
  • the IEC device also can be used as an X-ray source, as disclosed in PCT International Application No. PCT/US97/19307, which is incorporated herein by reference .
  • An objective of IEC development is to improve neutron generation efficiency, eventually moving towards the high-yield devices needed for future power reactors and space propulsion.
  • an object of the present invention is to enhance the performance of the conventional IEC device to achieve higher neutron yields, thus extending applications to areas requiring higher neutron fluxes such as neutron tomography, isotope production, explosive/landmine detection, and oil well logging. In fact, the attainment of even higher reaction rates could, in principle, eventually lead to a fusion power device based on the IEC. It is yet another object of the invention to retain the conventional IEC beam behavior, but to increase the ion currents well above the present 10-100 milliampere level in steady-state IEC operation. It is a further object of the invention to provide a method of easily and efficiently generating repetitive pulses of high energy ions with a resulting production in high quantities of neutrons and/or protons.
  • the key to obtaining yet higher neutron yields is to retain the conventional IEC beam behavior and to increase the ion currents well above the present 10-100 milliampere level. Since the fusion reaction rate increases with the square or higher power of the ion current, if the ion currents can be increased into the multi-ampere range, fusion reaction rates will exceed those of present devices by several orders of magnitude. Also, at these levels, a double potential well is expected to form in the central core region, trapping energetic ions, thus increasing ion confinement, hence reaction rate and power efficiency.
  • the present invention utilizes a gate-valve pulsing (GVP) technique that provides a practical method for achieving the high ion currents required for these high reaction rates, giving time-averaged neutron and/or proton source rates in the range of 10 11 - 10 14 /sec.
  • GVP gate-valve pulsing
  • the pulsed GVP- IEC of the present invention contemplates pulsing in accordance with two distinct techniques.
  • a first is a low repetition rate GVP (LR- GVP) operation and a second is a tuned high-frequency pulsing, termed Resonant Ion Driven Oscillation (RIDO) GVP operation.
  • LR- GVP low repetition rate GVP
  • RIDO Resonant Ion Driven Oscillation
  • both of the GVP- IEC designs employs a modified version of the steady-state spherical IEC configuration previously disclosed in US patent application S.N. 08/232,764.
  • both the LR- GVP and RIDO-GVP versions of the IEC utilize a "gate" grid system, comprising electron emitters, an electron guide grid, and a gate-valve grid, in combination with a pulsed voltage source, that provides the desired increase in ion currents.
  • the gate-valve grid of the present invention is initially biased to retain or "store” ions produced by electron-neutral collisions in the source region of the IEC device. Then the voltage on the gate- valve grid is suddenly decreased to enable extraction, acceleration and focussing of the "stored” ions by the central high-voltage cathode grid. After the desired pulse of fusion products (neutrons and/or protons) is obtained, the gate valve grid is returned to its original bias state and the procedure repeated at a pulsed repetition rate, typically 100 to 1000 Hz for "low" repetition rate operation, that is sufficient to achieve the desired time average neutron/proton flux.
  • a pulsed repetition rate typically 100 to 1000 Hz for "low" repetition rate operation
  • the pulsing is run with a frequency tuned to the ion recirculation time of the system (typically in the MHz range) .
  • This tuning makes possible higher ion currents by ion bunching and superposition of recirculating ion beams.
  • the tuning is set in a specific GVP-IEC device by monitoring the neutron rate while sweeping the picked power supply through a range of frequencies, e.g. 1-10 MHz. Resonance with the device ion recircution frequency is signaled by a significant increase in neutron production. Once selected, this resonant frequency can be retained for subsequent operation of this particular device.
  • the gate-valve ion "injection" system utilizes electron emitters staged around the perimeter of the IEC chamber to provide a sustainable edge ionization source to generate ions.
  • the location and number of emitters is selected to maintain a reasonably uniform election density in the ionization volume, typically requiring emitter separations equal to the election mean free path in the ionization volume.
  • RIDO-GVP operation offers even higher ion currents than low frequency GVP operation by bunching and combining ion beams. Accordingly, RIDO-GVP involves the addition of high frequency circuits and high precision for timing successive ion wave fronts to amplify the current in the plasma core. Collisional discharge mechanics will play in important role in ion distributions, thus requiring precise tuning.
  • FIG. 1 is a schematic illustration of a conventional Inertial Electron Confinement (IEC) device used for neutron production.
  • IEC Inertial Electron Confinement
  • Fig. 2 is a schematic illustration of a conventional IEC device operating in a "star mode" where plural microchannels of ions are formed and pass through the openings of a grid such that the effective transparency is greater than the geometric transparency.
  • Fig. 3 is an illustration of the potential variation that exists across the IEC device in relation to the anode shell and cathode grid. In this illustration it is assumed that the ion current is sufficient to produce a strong virtual anode which in turn accelerates and focuses electrons in the central region, creating the double potential well shown in the core region.
  • Figs. 4a and 4b provide an illustration of a "gate" grid system (electron emitters, electron guide grid, and gate-valve grid) used in the present invention, together with an illustration of the potential profile for such structure and an illustration of the ion trajectory and ionization regions within the IEC device. Note the potential profile of the device during the standby mode (gate valve grid closed) , the ionization region between the second and third grid, and inner cathode "fall” region where a step potential gradient occurs between the gate valve grid and the cathode.
  • a "gate” grid system electron emitters, electron guide grid, and gate-valve grid
  • Figs. 5a and 5b are illustrations of voltage vs. radius from the center line of the IEC device incorporating the present invention, where the gate potential is raised, and a device where the gate potential is lowered, respectively. Note that in the latter condition, the fall potential penetrates (extends into) the ionization region.
  • Fig. 6 is a graphical interpretation of the underlying concept of the present invention, showing the presence of "wave packets" of ions moving back and forth
  • Fig. 7 is an illustration of the power, based on the applicable voltages and currents, that are applied to the three-grid IEC device incorporating the present invention, including operation in the steady state and pulsed modes.
  • Fig. 8 is a circuit diagram of a power supply system for the GVP- IEC, including a pulse forming network used in the present invention.
  • the IEC-GVP device 11 is illustrated in Fig. 4a and comprises a structure similar to the IEC device of Fig.
  • Electron extractor/emitter devices 16 are disposed substantially symmetrically about the perimeter of the vessel and include electron extractor deflector grids 17 and electron emitters 18 that contribute to the enhanced timed ion flow in the device.
  • the basic operating principle of the GVP-type IEC is to flood the exterior region 23 of the device (i.e. the ionization volume between the outer grid 15 and the middle grid 14 in Fig.
  • the middle anode grid 14, serving as a "gate” has a potential applied to it that is quickly ( ⁇ 100 ⁇ s) decreased by 100V to 1 kV. This allows the central cathode 13 potential of 10-100 kV to penetrate into the outer ionization region 23 and extract the ions "stored” there.
  • the gate-valve grid 14 potential is then switched back to its original value after the stored ion group has left the ionization region, i.e. within a period of 500 n.s. or shorter. These extracted ions accelerate into the center cathode region 21 to the full-applied potential of the central cathode 13.
  • the accelerated ions will converge to a point in the core region of the device forming a dense central core plasma 21 where fusion reactions occur, thereby generating high-energy protons and neutrons from the D-D (or other fusionable gas) fusion reaction.
  • the spherical shell 23 of ions around the grid reforms again as the inertia of the ions carry them through the inner fall region 22 and back up the applied potential until they come to rest at a potential equivalent to that at their point of generation via collisional ionization. Some ions are lost via reactions, charge-exchange and grid collisions in this process. However, many are reaccelerated back into the central plasma core region 21 and continue to recirculate.
  • Fig. 4a The potential profile across the GVP-IEC prior to opening the gate-valve grid is seen in Fig. 4a, with operating potentials ranging between +100V to -lOOkV, as shown, but with a flat potential (negligible electric field) in the ionization region.
  • a sufficient number of the holes in the three grids are oriented with respect to each other in a radial direction so that they will have a high geometric transparency and will be able to sustain a high effective transparency to ions, such that the requisite number of ion spokes for the desired star mode or halo mode can develop within the vessel .
  • the grids themselves may be of a vane or wire-type structure, as is known in the art, and at least the cathode would have the requisite h/R parameter, as disclosed in U.S. application S.N. 08/232,764, wherein h is the height difference between a grid's spherical surface and the plane of the grid, and the R is the grid radius.
  • the pressure within the vessel can be maintained by a getter or pump, or a combination of such conventional techniques.
  • Figures 5a and 5b are schematic illustrations of ion extraction from ionization region by penetration of the central cathode potential after the gate voltage is lowered in a three-grid embodiment as shown in Figs. 4a and 4b.
  • the exterior two grids 14 and 15 in the system serve two purposes: a) the external grid 15 guides electrons that are extracted from the electron emitters such that in combination with the gate- valve grid 14, the electrons are confined to flow through and circumferencially around the ionization region.
  • the combination of the two grids creates a minimal for electrons to transit and allows for ionizations to remain localized in the field-free region
  • the middle "gate" grid 14 serves as the valve to selectively admit groups of ions into the core region.
  • the gate-valve grid potential can be raised and lowered, allowing the central cathode potential to penetrate into the ionization region and extract ions.
  • the figure shows ions (schematically shown as dots) "stored” in the ionization region where they are born until the gate value potential is suddenly lowered and they are accelerated towards the center by the potential gradient ("fall region") created by the potential in the central cathode grid.
  • One significant advantage of the three-grid, emitter-assisted, GVP-IEC system is that the ions always start out in the ionization volume near the vessel wall and thus accelerate to their full -applied potential energy at the central core plasma region, leading to a reduced ion energy spread, greater efficiency and improved focusing. Additionally, since the plasma discharge is supported by electron generator emission
  • the background gas pressure can be greatly reduced, significantly lessening ion isotropization effects from scattering collisions and energy losses from charge- exchange collisions.
  • the pulsed voltage required for the gate-valve grid is generally low ( ⁇ lkV) compared to directly pulsing the central anode, which would require pulsing voltages of 10 's of kV. This greatly simplifies the pulsed power supply technology and reduces electrical insulation problems.
  • An extension of the basic GVP-type IEC operation involves synchronization of the injection of ions towards the inner core with the natural ion circulation frequency in the system, i.e. setting the frequency for reducing the GVP potential to coincide with the ion circulation frequency (around 0.5-50 MHz) .
  • This form of operation has been named Resonant Ion Driven Oscillation (RIDO) .
  • RIDO Resonant Ion Driven Oscillation
  • newly generated ions converge towards the inner core at the same time that the recirculated ions arrive at their turning points.
  • all of the recirculating ion currents are effectively superimposed towards the inner core of the device, allowing them to be accelerated from the device perimeter and converge to the center. Consequently, very large peak densities can form at the ion transit frequency (around 0.5-50 MHz), providing for an ultra high time-average fusion generation rate.
  • Figure 6 shows a graphical interpretation of the RIDO-GVP process using an electron-emitter assisted three-grid IEC of the type shown in Fig. 4, where there is a superposition of ion fronts and spherical symmetry.
  • the extraction of ions from the exterior region is timed exactly so that when a previous ion wave front returns to its original starting location, a new successive wave packet of ions is introduced and superimposed onto the previous group of ions .
  • the combined ion population is then extracted and focused into the central core region again when the gate valve potential is reduced, i.e., the gate is "opened".
  • a steady-state supply 37A, having a power range of 0-lOOkV is connected to the cathode grid 38 and is operative to generate high central cathode voltages (i.e., up to lOOkV) and small currents (in a range of 0 to 100mA) .
  • a transmission-line pulsing system 37B also may be connected to the cathode grid 38 for very high current operation (several amps and above) at similar high voltages (pulsed operation is used because in current levels » 1 amp can best be achieved in transient operation) .
  • several high-current emitter power supplies 31 having a range of 0-50A are connected to drive the segmented discharge elements 32.
  • the gate power supply pulses at a relatively low frequency ( ⁇ 10 3 Hz) .
  • GVP type operation can also be extended to other modes of operation of the IEC device, for example the halo mode and jet modes of operation as described in prior IEC patents. The basic principles described here carry over directly.
  • RIDO For RIDO operation, high frequency pulsing (0.5-50 MHz) is employed. RIDO type operation and requires consideration of grid transparency issues, discharge species time constants, energy spreading and collisional losses, and space charge effects.
  • GVP operation allows an improvement over the conventional IEC design in obtaining higher fusion reaction rates by achieving high ion densities in the central plasma core during a pulse. Even higher densities can be achieved via RIDO-GVP where the superposition of ion fronts simultaneously increases the power efficiency by accelerating ions in bunches or groups .
  • the pulsed power supply 35 that is employed for the GVP-IEC may use conventional technology, such as the pulsed power unit developed for direct pulsing of the cathode, as disclosed in Y. Gu, M. Williams, R. Stubbers, G. H. Miley, "Pulsed Operation of Spherical Inertial- Electrostatic Confinement Device," 12 th Topical Meeting on the Technology of Fusion Energy, (Reno, NV, June, 1996) , ANS, LaGrange Park, IL, 128 (1996) .
  • Cathode pulsing has the disadvantage of pulsing the main cathode to a high voltage, as contrasted to the Gate-Grid design disclosed herein, where the main cathode is maintained in steady- state at a high voltage while the gate grid is pulsed at a low voltage.
  • the desired current and voltage per pulse may reach or exceed the 10 8 n/s level (50-kV pulse with 3.2 A of pulse-current and a duty
  • the main switch 45 has been upgraded by using an ignitron, rather than a thyratron, that responds to the trigger pulse 44 so that the pulser can deliver higher currents.
  • a diode 46 and coil 47 are connected in parallel to the switch 45.
  • the step-up ratio of the pulse transformer 49 has been increased from 1:7 to 1:10 to allow better matching with the IEC plasma along with higher voltage pulses.
  • the component ratings are adjusted to provide either the standard low frequency (10 - 1000 Hz) LR-GVP operation or the high frequency (1 - 50 MHz) RIDO operation.
  • Fentrop's neutron generator is basically a beam solid target system that can operate in steady-state or in a pulsed mode
  • Culver U.S. Patent No. 3,996,473 developed a device intended for pulsed operation for analysis of materials involving diagnostic techniques such as prompt gamma spectroscopy . His pulsing method does not directly involve the neutron generator's operational physics (such as microchannel beam formation and multiple well formation in the core in the GVP-IEC) . Further, pulsing and it's control in his device has no direct interaction with on the pulse timing control (e.g. ion storage, injection timing, etc,) as occurs in the case of the GVP- IEC.
  • the pulse timing control e.g. ion storage, injection timing, etc,
  • Bussard' s invention on the ICC effect for enhancing IEC operation mentions the usage of resonant coupling in their system. It is Bussard' s claim that ions can be reflected between ion acoustic barriers and trap ions in the IEC core region. This type of ion control is dependent on obtaining high ion currents, but does not discuss a method for obtaining them such as the GVP method disclosed here. While GVP-IEC operation involves resonant tuning, the RIDO resonance involves the ion recirculation frequency, and is controlled through timing of the storage and injection of ion currents by the gate- valve grid.
  • the GVP-type IEC provides a significant edge over conventional IEC technology or solid-target based neutron sources .
  • the increased neutron yield would open up new areas of commercialization in the regimes of medical research, neutron tomography and isotope production.
  • the GVP-IEC mode offers very high reaction rates that would be especially desirable for fusion electrical power production or fusion space propulsion.
  • the GVP-IEC concept also has several key advantages over competing non-IEC concepts.
  • the primary advantage is efficiency. Since the ions accelerate into the core region at the same time and the fusion reaction rate goes as the density squared, this leads to an increased fusion product output per unit energy input .
  • Another advantage is simplicity. Additionally, the RIDO-driven IEC maintains a beam-beam reaction capability which increases the devices efficiency for reaching advanced fuels such as D-He3 as opposed to devices operating by interaction of Maxwellian populations of ions.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Particle Accelerators (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

Cette invention a trait à une source de neutrons/protons pulsés axée sur le principe d'une configuration de confinement inertiel électrostatique (IEC) sphérique à régime permanent et utilisant une grille à soupape obturatrice pulsée (GVP). Ce dispositif IEC-GVP comporte une cuve conductrice mise à la terre, servant d'anode, et une cathode centrale ou grille primaire reliée à une source haute tension. Il comporte, de surcroît, une deuxième grille intermédiaire et une troisième grille extérieure, disposées concentriquement à la cathode centrale dans la cuve. Des dispositifs extracteurs/émetteurs d'électrons sont placés de manière sensiblement symétrique autour du périmètre de la cuve et comprennent des grilles de déviation extractrices d'électrons ainsi que des émetteurs d'électrons participant au renforcement du flux ionique temporisé dans le dispositif. Deux techniques d'émission d'impulsions sont utilisées pour la deuxième grille. La première consiste en une opération à faible régime de répétition (LR-GVP) et la seconde en une émission d'impulsions haute fréquence accordée, dénommée opération de GVP à oscillation résonante commandée par ions.
PCT/US1998/024034 1997-11-12 1998-11-12 Dispositif de fusion par confinement inertiel electrostatique (iec) a clapet obturateur a emission d'impulsions WO1999024990A2 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
KR1020007005167A KR20010032046A (ko) 1997-11-12 1998-11-12 게이트 밸브 펄스용 관성 정전 차단 핵융합 장치
CA002310071A CA2310071A1 (fr) 1997-11-12 1998-11-12 Dispositif de fusion par confinement inertiel electrostatique (iec) a clapet obturateur a emission d'impulsions
IL13609998A IL136099A0 (en) 1997-11-12 1998-11-12 Inertial electrostatic confinement (iec) fusion device with gate-valve pulsing
EEP200000528A EE200000528A (et) 1997-11-12 1998-11-12 Seade ja meetod suurte ioonvoolude impulsside genereerimiseks inertsiaal-elektrostaatilise vangistusega seadmes
AU19958/99A AU1995899A (en) 1997-11-12 1998-11-12 Inertial electrostatic confinement (iec) fusion device with gate-valve pulsing
JP2000519899A JP2001523010A (ja) 1997-11-12 1998-11-12 ゲートバルブの脈動が付いた慣性静電気閉じ込め（ｉｅｃ）融合装置および方法
EP98964691A EP1048038A2 (fr) 1997-11-12 1998-11-12 Dispositif de fusion par confinement inertiel electrostatique (iec) a clapet obturateur a emission d'impulsions
HU0100180A HUP0100180A1 (hu) 1997-11-12 1998-11-12 Inerciális elektrosztatikus határolású fúziós eszköz impulzus kapuvezérléssel
NO20002437A NO20002437L (no) 1997-11-12 2000-05-11 Fusjonsanordning med interiell elektrostatisk begrensning

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6480197P 1997-11-12 1997-11-12
US60/064,801 1997-11-12

Publications (2)

Publication Number Publication Date
WO1999024990A2 true WO1999024990A2 (fr) 1999-05-20
WO1999024990A3 WO1999024990A3 (fr) 1999-09-23

Family

ID=22058359

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1998/024034 WO1999024990A2 (fr) 1997-11-12 1998-11-12 Dispositif de fusion par confinement inertiel electrostatique (iec) a clapet obturateur a emission d'impulsions

Country Status (11)

Country Link
EP (1) EP1048038A2 (fr)
JP (1) JP2001523010A (fr)
KR (1) KR20010032046A (fr)
CN (1) CN1294742A (fr)
AU (1) AU1995899A (fr)
CA (1) CA2310071A1 (fr)
EE (1) EE200000528A (fr)
HU (1) HUP0100180A1 (fr)
IL (1) IL136099A0 (fr)
NO (1) NO20002437L (fr)
WO (1) WO1999024990A2 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003085418A3 (fr) * 2002-04-05 2003-12-18 Bundesrep Deutschland Procede et dispositif d'analyse chimique non destructive rapide d'objets de mesure
US6922455B2 (en) * 2002-01-28 2005-07-26 Starfire Industries Management, Inc. Gas-target neutron generation and applications
WO2004097843A3 (fr) * 2003-04-24 2006-12-28 Univ Community College Sys Nev Appareil et procede de declenchement de microexplosions thermonucleaire a gain elevee au moyen d'un courant electrique pulse
WO2010012021A1 (fr) * 2008-07-31 2010-02-04 Jiddtek Pty Ltd Générateur de particules neutres
WO2011011702A3 (fr) * 2009-07-24 2011-05-05 The Regents Of The University Of California Production de radionucléides au moyen d'une source de neutrons à striction longitudinale
US11901086B2 (en) * 2021-10-22 2024-02-13 Qixianhe (Beijing) Technology Co., Ltd. Inertial electrostatic confinement fusion apparatus for electron injection neutralization

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101013144B1 (ko) * 2009-03-20 2011-02-10 서울대학교산학협력단 전자원이 장착된 관성형 정전 핵융합 장치
US8891719B2 (en) * 2009-07-29 2014-11-18 General Fusion, Inc. Systems and methods for plasma compression with recycling of projectiles
MX2014012863A (es) * 2012-04-25 2015-07-14 Ionic Solutions Ltd Aparato y proceso para la penetracion de la barrera de coulomb.
CN109585034B (zh) * 2018-06-20 2020-09-11 新奥科技发展有限公司 一种用于静电约束核聚变的阴极及静电约束核聚变装置
AU2020233809A1 (en) * 2019-02-27 2021-10-21 Beam Alpha, Inc. Direct nuclear power conversion
CN109920559A (zh) * 2019-03-04 2019-06-21 中国原子能科学研究院 一种内离子源惯性静电约束聚变装置
US12417852B1 (en) 2020-01-14 2025-09-16 Beam Alpha, Inc. Ion transport
CA3178871A1 (fr) 2020-06-08 2021-12-16 Beam Alpha, Inc. Source d'ions
CN116582994A (zh) * 2023-04-10 2023-08-11 兰州大学 基于惯性静电约束聚变的同轴柱形d-d中子发生器
CN116504426B (zh) * 2023-04-19 2025-06-06 北京航空航天大学 一种高真空氢硼核聚变反应堆装置
CN117341993A (zh) * 2023-10-10 2024-01-05 北京航空航天大学 一种惯性静电约束吸气式电推力器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH484585A (fr) * 1967-04-10 1970-01-15 Inst Fizica Atomica Procédé d'accélération linéaire de ions ou d'électrons, et dispositif pour la mise en oeuvre de ce procédé
US3530497A (en) * 1968-04-24 1970-09-22 Itt Apparatus for generating fusion reactions
US4826646A (en) * 1985-10-29 1989-05-02 Energy/Matter Conversion Corporation, Inc. Method and apparatus for controlling charged particles
US5160695A (en) * 1990-02-08 1992-11-03 Qed, Inc. Method and apparatus for creating and controlling nuclear fusion reactions
WO1995030235A2 (fr) * 1994-04-25 1995-11-09 Rockford Technologies Associates, Inc. Generation de particles a confinement inertiel-electrostatique

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6922455B2 (en) * 2002-01-28 2005-07-26 Starfire Industries Management, Inc. Gas-target neutron generation and applications
WO2003085418A3 (fr) * 2002-04-05 2003-12-18 Bundesrep Deutschland Procede et dispositif d'analyse chimique non destructive rapide d'objets de mesure
WO2004097843A3 (fr) * 2003-04-24 2006-12-28 Univ Community College Sys Nev Appareil et procede de declenchement de microexplosions thermonucleaire a gain elevee au moyen d'un courant electrique pulse
WO2010012021A1 (fr) * 2008-07-31 2010-02-04 Jiddtek Pty Ltd Générateur de particules neutres
AU2009276278B2 (en) * 2008-07-31 2012-07-05 Jiddtek Pty Ltd Neutral particle generator
WO2011011702A3 (fr) * 2009-07-24 2011-05-05 The Regents Of The University Of California Production de radionucléides au moyen d'une source de neutrons à striction longitudinale
US11901086B2 (en) * 2021-10-22 2024-02-13 Qixianhe (Beijing) Technology Co., Ltd. Inertial electrostatic confinement fusion apparatus for electron injection neutralization

Also Published As

Publication number Publication date
EP1048038A2 (fr) 2000-11-02
KR20010032046A (ko) 2001-04-16
IL136099A0 (en) 2001-05-20
NO20002437L (no) 2000-07-11
EE200000528A (et) 2002-02-15
WO1999024990A3 (fr) 1999-09-23
AU1995899A (en) 1999-05-31
JP2001523010A (ja) 2001-11-20
NO20002437D0 (no) 2000-05-11
CN1294742A (zh) 2001-05-09
CA2310071A1 (fr) 1999-05-20
HUP0100180A1 (hu) 2001-07-30

Similar Documents

Publication Publication Date Title
US11363708B2 (en) Negative ion-based beam injector
EP1048038A2 (fr) Dispositif de fusion par confinement inertiel electrostatique (iec) a clapet obturateur a emission d'impulsions
US6441569B1 (en) Particle accelerator for inducing contained particle collisions
CN107316662B (zh) 基于负离子的中性束注入器
Ehlers et al. Multicusp negative ion source
CN1235569A (zh) 利用惯性静电约束放电等离子体的等离子体喷射源
EP0951440A1 (fr) Procede et appareil permettant de produire des molecules de carbone complexes
Stockli et al. Ion injectors for high-intensity accelerators
VanDevender et al. Light-ion accelerators for ICF
US4349505A (en) Neutral beamline with ion energy recovery based on magnetic blocking of electrons
Lapierre et al. High-Current Capability and Upgrades of the EBIS/T Charge-Breeding System in the Reaccelerator at the Facility for Rare-Isotope Beams
CZ20001732A3 (cs) Zařízení pro inerciální elektrostatickou ohraničenou fůzi IEC s pulzujícím vstupním ventilem
Tsybin et al. Neutron generation in small sealed accelerating tubes
Alexeev et al. Status of the terawatt accumulator accelerator project
RU2776324C1 (ru) Прямоточный релятивистский двигатель
JPH0465358B2 (fr)
Kunkel Multimegawatt neutral beams for tokamaks
Reijonen et al. Compact neutron source development at LBNL
Kwan High current injectors for heavy ion driven inertial fusion
Dudnikov Methods of Negative Ion Production
Phaneuf Advanced sources of highly charged ions
Mahmoudzadeh Dual Ion Engine Design & Development
Reiser A Collective Accelerator as Ion Source and Injector for a Heavy-Ion Cyclotron
Kislev et al. A Novel Ion Beam Source for Electrostatic Confined Fusion Reactors
JP4177149B2 (ja) 荷電粒子発生装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 136099

Country of ref document: IL

Ref document number: 98813023.8

Country of ref document: CN

AK Designated states

Kind code of ref document: A2

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GD GE GH GM HR HU ID IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW SD SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GD GE GH GM HR HU ID IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW SD SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

ENP Entry into the national phase

Ref document number: 2310071

Country of ref document: CA

Ref document number: 2310071

Country of ref document: CA

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: PV2000-1732

Country of ref document: CZ

ENP Entry into the national phase

Ref document number: 2000 519899

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020007005167

Country of ref document: KR

Ref document number: PA/A/2000/004623

Country of ref document: MX

WWE Wipo information: entry into national phase

Ref document number: 1998964691

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 19958/99

Country of ref document: AU

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWP Wipo information: published in national office

Ref document number: 1998964691

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 09554338

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: PV2000-1732

Country of ref document: CZ

WWP Wipo information: published in national office

Ref document number: 1020007005167

Country of ref document: KR

WWW Wipo information: withdrawn in national office

Ref document number: 1998964691

Country of ref document: EP

WWR Wipo information: refused in national office

Ref document number: PV2000-1732

Country of ref document: CZ

WWW Wipo information: withdrawn in national office

Ref document number: 1020007005167

Country of ref document: KR