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WO1999030352A3 - Verfahren zur herstellung einer matrix aus dünnschichttransistoren mit speicherkapazitäten - Google Patents

Verfahren zur herstellung einer matrix aus dünnschichttransistoren mit speicherkapazitäten Download PDF

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Publication number
WO1999030352A3
WO1999030352A3 PCT/EP1998/007361 EP9807361W WO9930352A3 WO 1999030352 A3 WO1999030352 A3 WO 1999030352A3 EP 9807361 W EP9807361 W EP 9807361W WO 9930352 A3 WO9930352 A3 WO 9930352A3
Authority
WO
WIPO (PCT)
Prior art keywords
matrix
producing
thin
film transistors
storage capacities
Prior art date
Application number
PCT/EP1998/007361
Other languages
English (en)
French (fr)
Other versions
WO1999030352A2 (de
Inventor
Joachim Glueck
Martin Hueppauff
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Priority to EP98966240A priority Critical patent/EP1038320A2/de
Priority to JP2000524811A priority patent/JP2001526412A/ja
Priority to KR1020007006284A priority patent/KR20010032940A/ko
Publication of WO1999030352A2 publication Critical patent/WO1999030352A2/de
Publication of WO1999030352A3 publication Critical patent/WO1999030352A3/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)

Abstract

Es wird ein Verfahren zur Herstellung einer Matrix aus Dünnschichttransistoren mit Speicherkapazitäten, insbesondere für Flüssigkristallbildschirme, vorgeschlagen, bei dem zur Reduzierung der Zahl der Prozeßschritte für die Passivierung der Matrix und zur Herstellung der Bildpunktelektroden jeweils photostrukturierbare Materialien verwendet werden.
PCT/EP1998/007361 1997-12-10 1998-11-17 Verfahren zur herstellung einer matrix aus dünnschichttransistoren mit speicherkapazitäten WO1999030352A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP98966240A EP1038320A2 (de) 1997-12-10 1998-11-17 Verfahren zur herstellung einer matrix aus dünnschichttransistoren mit speicherkapazitäten
JP2000524811A JP2001526412A (ja) 1997-12-10 1998-11-17 記憶コンデンサを伴う薄膜トランジスタからなるマトリクスの製法
KR1020007006284A KR20010032940A (ko) 1997-12-10 1998-11-17 스토리지 용량을 가지는 박막 트랜지스터로부터매트릭스의 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19754784A DE19754784B4 (de) 1997-12-10 1997-12-10 Verfahren zur Herstellung einer Matrix aus Dünnschichttransistoren mit Speicherkapazitäten
DE19754784.2 1997-12-10

Publications (2)

Publication Number Publication Date
WO1999030352A2 WO1999030352A2 (de) 1999-06-17
WO1999030352A3 true WO1999030352A3 (de) 1999-12-09

Family

ID=7851371

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1998/007361 WO1999030352A2 (de) 1997-12-10 1998-11-17 Verfahren zur herstellung einer matrix aus dünnschichttransistoren mit speicherkapazitäten

Country Status (6)

Country Link
EP (1) EP1038320A2 (de)
JP (1) JP2001526412A (de)
KR (1) KR20010032940A (de)
DE (1) DE19754784B4 (de)
TW (1) TW432707B (de)
WO (1) WO1999030352A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19933843B4 (de) * 1999-07-20 2005-02-17 Robert Bosch Gmbh Eine Schicht, die elektrisch leitfähiges, transparentes Material enthält, ein Verfahren zur Herstellung einer solchen Schicht und deren Verwendung
KR100485625B1 (ko) * 2001-12-20 2005-04-27 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
KR101023292B1 (ko) * 2003-10-28 2011-03-18 엘지디스플레이 주식회사 액정표시장치 제조방법
CN103700673B (zh) * 2013-12-24 2017-07-04 京东方科技集团股份有限公司 一种显示装置、阵列基板及其制作方法
US11676855B2 (en) * 2020-02-26 2023-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Patterning interconnects and other structures by photo-sensitizing method
DE102020130905A1 (de) * 2020-02-26 2021-08-26 Taiwan Semiconductor Manufacturing Co., Ltd. Strukturieren von Interconnects und anderer Aufbauten durch Photosensibilisierungsverfahren

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0686662A2 (de) * 1994-05-06 1995-12-13 Bayer Ag Leitfähige Beschichtungen
EP0762184A1 (de) * 1995-08-11 1997-03-12 Sharp Kabushiki Kaisha Transmissive Flüssigkristall-Anzeigevorrichtung und Herstellungsverfahren
JPH0990421A (ja) * 1995-09-27 1997-04-04 Sharp Corp 液晶表示装置およびその製造方法
WO1997018944A1 (en) * 1995-11-22 1997-05-29 The Government Of The United States Of America, Represented By The Secretary Of The Navy Patterned conducting polymer surfaces and process for preparing the same and devices containing the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61292183A (ja) * 1985-05-25 1986-12-22 旭硝子株式会社 エレクトロクロミツク表示素子
DE4310640C1 (de) * 1993-03-31 1994-05-11 Lueder Ernst Verfahren zur Herstellung einer Matrix aus a-Si:H-Dünnschichttransistoren

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0686662A2 (de) * 1994-05-06 1995-12-13 Bayer Ag Leitfähige Beschichtungen
EP0762184A1 (de) * 1995-08-11 1997-03-12 Sharp Kabushiki Kaisha Transmissive Flüssigkristall-Anzeigevorrichtung und Herstellungsverfahren
JPH0990421A (ja) * 1995-09-27 1997-04-04 Sharp Corp 液晶表示装置およびその製造方法
US5731855A (en) * 1995-09-27 1998-03-24 Sharp Kabushiki Kaisha Liquid crystal display device having a film for protecting interface between interlayer insulating film and underlying layer and manufacturing method thereof
WO1997018944A1 (en) * 1995-11-22 1997-05-29 The Government Of The United States Of America, Represented By The Secretary Of The Navy Patterned conducting polymer surfaces and process for preparing the same and devices containing the same

Also Published As

Publication number Publication date
JP2001526412A (ja) 2001-12-18
WO1999030352A2 (de) 1999-06-17
EP1038320A2 (de) 2000-09-27
KR20010032940A (ko) 2001-04-25
DE19754784B4 (de) 2004-02-12
DE19754784A1 (de) 1999-06-24
TW432707B (en) 2001-05-01

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