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WO1999039382A1 - Procede de brulage de materiaux organiques presents a la surface de substrats - Google Patents

Procede de brulage de materiaux organiques presents a la surface de substrats Download PDF

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Publication number
WO1999039382A1
WO1999039382A1 PCT/US1999/001560 US9901560W WO9939382A1 WO 1999039382 A1 WO1999039382 A1 WO 1999039382A1 US 9901560 W US9901560 W US 9901560W WO 9939382 A1 WO9939382 A1 WO 9939382A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
ashing
sulfur trioxide
photoresists
group
Prior art date
Application number
PCT/US1999/001560
Other languages
English (en)
Inventor
Eric O. Levenson
Ahmad Waleh
Original Assignee
Anon, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anon, Inc. filed Critical Anon, Inc.
Priority to CA002319018A priority Critical patent/CA2319018C/fr
Priority to EP99904261A priority patent/EP1074043A4/fr
Priority to JP2000529750A priority patent/JP3358808B2/ja
Priority to IL13751399A priority patent/IL137513A/en
Publication of WO1999039382A1 publication Critical patent/WO1999039382A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern

Definitions

  • the present invention relates generally to the removal of organic materials on various substrates, and, more particularly, to an ashing method for removing organic films and materials temporarily formed on various substrate layers during fabrication of semiconductor, flat panel display, read/write heads, and other related devices.
  • VLSI Very Large Scale Integration
  • ULSI Ultra Large Scale Integration
  • the ashing methods are continuously faced with two problems: (a) achieving higher rates of residual-free resist removal and (b) lowering the amount of damage caused in the substrate layers underlying the resist film.
  • These generally conflicting objectives are addressed by changing either the physical conditions of the plasma medium or the chemical conditions of the ashing process. For example, one can achieve higher rates of processing by either generating a dense plasma environment or by using or generating, in the plasma environment, chemical species that react more efficiently with the resist.
  • Substrate damage can likewise be attributed to both physical and chemical conditions of the plasma.
  • charging and ion bombardment effects are directly related to the physical properties of the plasma.
  • Energetic ions can drive small quantities of heavy metal (i.e.. Fe, Cu and Pb) and alkaline metal (i.e.. Na and K) atoms, which are generally present as impu ⁇ ties in the resist films, into the substrate layer underneath the resist.
  • the heavy metal contamination and in particular the subsequent permeation and migration of heavy metals into other substrates (e.g. silicon) layers can affect the minority carrier lifetime to the detriment of the device properties.
  • Such bombardment effects become more severe as the resist films become thinner towards the end of the ashing process, particularly as the thickness of sensitive substrates are designed to be thinner.
  • Substrate damage also results from the chemical properties of plasma, such as etching or other poisonous effects on the layer underneath the resist.
  • etching of silicon oxide (SiO 2 ) occurs because of fluorine (F), when halogenated gas mixtures such as oxygen (O 2 ) and tetrafluoromethane (CF 4 ) are used to increase the rate of plasma ashing.
  • halogenated gas mixtures such as oxygen (O 2 ) and tetrafluoromethane (CF 4 ) are used to increase the rate of plasma ashing.
  • energetic oxygen ions can contribute to the formation water inside the surface layers of spin-on-glass (SOG) films, resulting in an increase in the dielectric constant or in the related via-poisoning phenomenon.
  • the rate and completeness of ashing as well as any unwanted etching or damage to the substrate layer, in the conventional ashing tools, are strongly influenced by the chemical reactions between the resist and the substrate layer and the reactive ionic, neutral and radical species generated in the plasma.
  • the nature of the plasma gas mixture is the p ⁇ - mary determinant of the ashing rate which is also sensitive to the "ashing temperature".
  • the nature of the gas mixture also influences the activation energy of ashing which is a measure of the sensitivity of the ashing rate to the ashing temperature.
  • the activation energy is obtained from the gradient of the A ⁇ t-enius plot which is a line plot of the ashing rate as a function of the inverse .ashing temperatures. Therefore, a small activation energy (small slope of the Arrhenius plot) indicates that ashing rate is less sensitive to ashing temperature, and that the ashing process will be more stable and uniform. Lower activation ener- gies also imply that the ashing temperature can be lowered without significant loss of ashing rate. This is particularly useful where VLSI or ULSI fabrication requires lower processing temperatures and yet where acceptable practical levels of ashing rates (i.e., > 0.5 ⁇ m/min) must be maintained.
  • the present inventors have successfully used anhydrous sulfur trioxide (SO 3 ) in non- plasma resist removal applications at temperatures substantially lower than 200°C.
  • SO 3 anhydrous sulfur trioxide
  • Experiments have shown that exposure of resist-covered substrate surfaces to SO 3 leaves polysilicon and metal substrates surfaces intact without any deleterious effect. Exposed silicon and metal surfaces are also protected because of passivation action of sulfur trioxide. Therefore, sulfur trioxide 4 appears as a suitable candidate, either alone or in a reactant gas mixture, for plasma ashing applications. Particularly in the presence of oxygen plasma, it is expected that SO 3 will enhance the oxygen radical formation, thus significantly improving the rate of the ashing reaction.
  • Group 1 gas which comprises only sulfur trioxide g.as
  • Group 2 gases which comprise a mixture of sulfur trioxide and a supplemental gas such as water vapor, ozone, hydrogen, nitrogen, nitrogen oxides, or a halogenide such as tetrafluoro-methane (CF 4 ), chlorine (Cl 2 ), nitrogen trifluoride (NF 3 ), hexafluoroethane (C 2 F 6 ), or methyltrifluoride (CHF 3 );
  • Group 3 gases which comprise a mixture of sulfur trioxide and at least two of the foregoing supplemental gases.
  • supplemental gases when certain of these supplemental gases are added to the main reactive ashing gas in the appropriate quantities and at the appropriate time in the process, they promote favorable ashing process characteristics and organic film removal performance.
  • Such favorable characteristics and performance includes (a) higher ashing rates, (b) lower acti- vation energies, and (c) absence of ground layer etching during the organic removal process.
  • Stripping and plasma ashing of organic photoresists using one of the three groups of gases described above, are carried out with a conventional down-flow, barrel, downstream, direct, or other type of plasma ashing tool which is known in the prior art.
  • the present invention pertains to the nature of the gases used in the ashing process and has application in all conventional ashing tools.
  • the down-flow, barrel, direct, and downstream and other types of plasma ashing tools are well-known in this .art and form no part of this invention.
  • the basic concept behind this invention is that sulfur trioxide gas.
  • the sulfur t ⁇ oxide is provided in a source container from which sulfur trioxide gas is supplied to the processing chamber in the quantities and at the appropriate time in the ashing process.
  • sulfur trioxide may be a mix of solid, liquid or gas, with the solid material in alpha form, beta form, gamma form or a mixture thereof.
  • the following organic materials in the form of coatings, films, layers, and residues, may be removed by the process of the present invention: polymerized and non- polymerized photoresists, photoresist residues, photosensitive and non-photosensitive organic compounds, paints, resins, multilayer organic polymers, organo-metallic complexes, sidewall polymers, and organic spin-on-glass.
  • the photoresists may comprise positive optical photoresists, negative optical photoresists, electron beam photoresists, X-ray photoresists, and ion-beam photoresists.
  • Such coatings, films, layers, and residues may have been formed on a variety of substrates, including, but not limited to, (a) semiconductor wafers and devices comprised of silicon, polysilicon, germanium, ITI-V materials, and II- VI materials, (b) oxides, (c) nitrides, (d) oxyni- trides, (e) inorganic dielectrics, (f) metals and metal alloys, (g) ceramic devices, (h) photomasks, (i) liquid crystal .and flat panel displays, (j) printed circuit boards, (k) magnetic read/write heads, and (1) thin film heads.
  • substrates including, but not limited to, (a) semiconductor wafers and devices comprised of silicon, polysilicon, germanium, ITI-V materials, and II- VI materials, (b) oxides, (c) nitrides, (d) oxyni- trides, (e) inorganic dielectrics, (f) metals and metal alloys, (g) ceramic devices, (
  • the ashing process of the invention may be carried out at a temperature within the range of room temperature (about 20°C) up to 350°C. However, the ashing process is preferably carried out at as low a temperature as possible, consistent with maintaining as high an etching rate as possible. More preferably, then, the ashing process is carried out at a temperature less than about 200°C.
  • One embodiment is a plasma ashing process conducted in any of the conventional down- flow. b-arrel. direct, and downstream and other types of ashing tools known in the prior art.
  • the Group 1 gases are employed for the purpose of creating a plasma.
  • the reactant gases comprise only sulfur trioxide.
  • Sulfur trioxide is supplied to the plasma generating chamber, which is initially evacuated and exhausted to an appropriate vacuum.
  • the 6 flow rate of the SO 3 gas is controlled by a controller during the process.
  • Microwave power is supplied into the plasma generating chamber where a plasma is created with the reactant gases.
  • Active species which are generated as a plasma flow down to a process chamber and come into contact with the organic film on the surface of the substrate by one of the methods disclosed in the prior art.
  • the organic film is either removed or chemically changed so as to render the film removable with subsequent rinsing or cleaning steps in the process.
  • the process limitations such as flow rate, microwave power, and the like are the same as those conventionally employed in the prior art. such as disclosed in U.S. Patents 4.669,689 and 4,961,820.
  • the Group 2 gases are employed for the purpose of creating a plasma.
  • the reactant gases comprise sulfur trioxide and one supplemental gas.
  • Sulfur trioxide and the supplemental gas are supplied to the plasma generating chamber, which is initially evacuated and exhausted to an appropriate vacuum.
  • the sulfur trioxide concentration in the Group 2 reactant gas is within the range of about 1 to 95 vol%.
  • the supplemental gas comprises the balance (99 to 5 vol%).
  • the flow rate of each gas is controlled by a controller during the process.
  • Microwave power is supplied into the plasma generating chamber where a plasma is created with the reactant gases.
  • the supplemental gas may comprise any of the gases selected from the group consisting of water vapor, ozone, hydrogen, nitrogen, nitrogen oxides, or a halogenide such as tetrafluo- romethane (CF ), chlorine (Cl 2 ), nitrogen trifluoride (NF 3 ), hexafluoroethane (C 2 F 6 ), or methyl- trifluoride (CHF 3 ).
  • CF tetrafluo- romethane
  • chlorine Cl 2
  • nitrogen trifluoride NF 3
  • hexafluoroethane C 2 F 6
  • CHF 3 methyl- trifluoride
  • nitrogen oxides include nitrous oxide (N 2 O), nitric oxide (NO), nitrogen trioxide (NO ), and nitrogen dioxide (NO 2 ).
  • Yet another embodiment of the present invention is a plasma ashing process conducted in any of the conventional down-flow, barrel, direct, and downstream and other types of ashing tools.
  • the Group 3 gases are employed for the purpose of creating a plasma.
  • the reactant gases comprise sulfur trioxide and at least two supplemental gases. Sulfur trioxide and the supplemental gases are supplied to the plasma generating chamber, which is initially evacuated and exhausted to an appropriate vacuum.
  • the sulfur trioxide concentration in the Group 3 reactant gas is within the range of about 1 to 95 vol%.
  • the supplemental gas comprises the balance (99 to 5 vol%). 8
  • the flow rate of the gas is controlled by a controller during the process.
  • Microwave power is supplied into the plasma generating chamber where a plasma is created with the reactant gases.
  • Active species which are generated as a plasma, flow down to a process chamber and come into contact with the organic film on the surface of the substrate by one of the methods dis- closed in the prior art.
  • the organic film is either removed, or chemically changed so as to render the film removable with subsequent rinsing or cleaning steps in the process.
  • the process limitations, such as flow rate, microwave power, and the like are the same as those conventionally employed in the prior art.
  • the supplemental gases comprises at least two of the gases from the list of supplemental gases given above.
  • removal of organic films, including resist layers is substantially complete, with little or no damage to the underlying ground layer.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

L'invention porte sur le brûlage de films organiques présents à la surface de substrats à l'aide d'un plasma d'un gaz ou d'un mélange de gaz choisi parmi: (a) du trioxyde de soufre seul, (b) du trioxyde de soufre plus un gaz additionnel, (c) du trioxyde de soufre plus au moins deux gaz additionnels. Chacun des gaz suivants peut servir de gaz additionnel: vapeur d'eau, ozone, hydrogène, azote, oxydes d'azote, ou un halogénure choisi parmi du tétrafluorométhane, du chlore, du trifluorure d'azote, de l'héxafluorométane ou du trifluorure de méthyle.
PCT/US1999/001560 1998-01-28 1999-01-26 Procede de brulage de materiaux organiques presents a la surface de substrats WO1999039382A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CA002319018A CA2319018C (fr) 1998-01-28 1999-01-26 Procede de brulage de materiaux organiques presents a la surface de substrats
EP99904261A EP1074043A4 (fr) 1998-01-28 1999-01-26 Procede de brulage de materiaux organiques presents a la surface de substrats
JP2000529750A JP3358808B2 (ja) 1998-01-28 1999-01-26 基板から有機物質を灰化する方法
IL13751399A IL137513A (en) 1998-01-28 1999-01-26 The process of becoming ash of organic matter and substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1469598A 1998-01-28 1998-01-28
US09/014,695 1998-01-28

Publications (1)

Publication Number Publication Date
WO1999039382A1 true WO1999039382A1 (fr) 1999-08-05

Family

ID=21767120

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/001560 WO1999039382A1 (fr) 1998-01-28 1999-01-26 Procede de brulage de materiaux organiques presents a la surface de substrats

Country Status (9)

Country Link
EP (1) EP1074043A4 (fr)
JP (1) JP3358808B2 (fr)
KR (1) KR100377711B1 (fr)
CN (1) CN1154159C (fr)
CA (1) CA2319018C (fr)
IL (1) IL137513A (fr)
MY (1) MY134851A (fr)
TW (1) TWI239994B (fr)
WO (1) WO1999039382A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001024245A1 (fr) * 1999-09-28 2001-04-05 Anon, Inc. Procede d'elimination par calcination de materiaux organiques sur des substrats
WO2005066717A1 (fr) * 2003-12-23 2005-07-21 Tokyo Electron Limited Procede et appareil pour enlever du photoresist d'un substrat
WO2007056369A3 (fr) * 2005-11-08 2007-07-05 Tokyo Electron Ltd Decapage a sec d’un lot de resine photosensible, systeme a cendres et procede

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100559947B1 (ko) * 2004-08-18 2006-03-13 동부아남반도체 주식회사 반도체 소자용 금속 배선의 후처리 방법
US7381651B2 (en) * 2006-03-22 2008-06-03 Axcelis Technologies, Inc. Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process
US8043434B2 (en) * 2008-10-23 2011-10-25 Lam Research Corporation Method and apparatus for removing photoresist
CN104599962A (zh) * 2014-12-29 2015-05-06 上海华虹宏力半导体制造有限公司 厚铝刻蚀工艺中聚合物的去除方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473437A (en) * 1983-03-08 1984-09-25 Tokyo Shibaura Denki Kabushiki Kaisha Dry etching method for organic material layers
JPH05304089A (ja) * 1992-04-28 1993-11-16 Dainippon Screen Mfg Co Ltd 基板表面からのレジストの除去方法並びに装置
US5447598A (en) * 1988-11-04 1995-09-05 Fujitsu Limited Process for forming resist mask pattern
US5487967A (en) * 1993-05-28 1996-01-30 At&T Corp. Surface-imaging technique for lithographic processes for device fabrication
US5763016A (en) * 1996-12-19 1998-06-09 Anon, Incorporated Method of forming patterns in organic coatings films and layers
US5824604A (en) * 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0475323A (ja) * 1990-07-17 1992-03-10 Seiko Epson Corp レジスト除去法
US5037506A (en) * 1990-09-06 1991-08-06 Subhash Gupta Method of stripping layers of organic materials
FR2673763A1 (fr) * 1991-03-06 1992-09-11 Centre Nat Rech Scient Procede de gravure anisotrope des polymeres par plasma.
JP3084910B2 (ja) * 1992-03-18 2000-09-04 ヤマハ株式会社 配線形成法
JP2572924B2 (ja) * 1992-09-04 1997-01-16 醇 西脇 大気圧プラズマによる金属の表面処理法
JP3391410B2 (ja) * 1993-09-17 2003-03-31 富士通株式会社 レジストマスクの除去方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473437A (en) * 1983-03-08 1984-09-25 Tokyo Shibaura Denki Kabushiki Kaisha Dry etching method for organic material layers
US5447598A (en) * 1988-11-04 1995-09-05 Fujitsu Limited Process for forming resist mask pattern
JPH05304089A (ja) * 1992-04-28 1993-11-16 Dainippon Screen Mfg Co Ltd 基板表面からのレジストの除去方法並びに装置
US5487967A (en) * 1993-05-28 1996-01-30 At&T Corp. Surface-imaging technique for lithographic processes for device fabrication
US5824604A (en) * 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US5763016A (en) * 1996-12-19 1998-06-09 Anon, Incorporated Method of forming patterns in organic coatings films and layers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1074043A4 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6599438B2 (en) 1998-01-28 2003-07-29 Anon, Inc. Process for ashing organic materials from substrates
WO2001024245A1 (fr) * 1999-09-28 2001-04-05 Anon, Inc. Procede d'elimination par calcination de materiaux organiques sur des substrats
WO2005066717A1 (fr) * 2003-12-23 2005-07-21 Tokyo Electron Limited Procede et appareil pour enlever du photoresist d'un substrat
WO2007056369A3 (fr) * 2005-11-08 2007-07-05 Tokyo Electron Ltd Decapage a sec d’un lot de resine photosensible, systeme a cendres et procede
US7387968B2 (en) 2005-11-08 2008-06-17 Tokyo Electron Limited Batch photoresist dry strip and ash system and process

Also Published As

Publication number Publication date
CN1154159C (zh) 2004-06-16
CN1289452A (zh) 2001-03-28
IL137513A (en) 2004-05-12
JP3358808B2 (ja) 2002-12-24
TWI239994B (en) 2005-09-21
CA2319018A1 (fr) 1999-08-05
MY134851A (en) 2007-12-31
EP1074043A4 (fr) 2002-11-06
KR100377711B1 (ko) 2003-03-26
IL137513A0 (en) 2001-07-24
JP2002502125A (ja) 2002-01-22
KR20010040431A (ko) 2001-05-15
EP1074043A1 (fr) 2001-02-07
CA2319018C (fr) 2004-08-24

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