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WO2000058999A3 - Semiconductor structures having a strain compensated layer and method of fabrication - Google Patents

Semiconductor structures having a strain compensated layer and method of fabrication Download PDF

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Publication number
WO2000058999A3
WO2000058999A3 PCT/IB2000/000892 IB0000892W WO0058999A3 WO 2000058999 A3 WO2000058999 A3 WO 2000058999A3 IB 0000892 W IB0000892 W IB 0000892W WO 0058999 A3 WO0058999 A3 WO 0058999A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
fabrication
strain compensated
constituent
material under
Prior art date
Application number
PCT/IB2000/000892
Other languages
French (fr)
Other versions
WO2000058999B1 (en
WO2000058999A2 (en
WO2000058999A9 (en
Inventor
Toru Takayama
Takaaki Baba
James S Harris Jr
Original Assignee
Matsushita Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Corp filed Critical Matsushita Electric Corp
Priority to JP2000608410A priority Critical patent/JP2002540618A/en
Priority to EP00940681A priority patent/EP1183761A2/en
Publication of WO2000058999A2 publication Critical patent/WO2000058999A2/en
Publication of WO2000058999A3 publication Critical patent/WO2000058999A3/en
Publication of WO2000058999B1 publication Critical patent/WO2000058999B1/en
Publication of WO2000058999A9 publication Critical patent/WO2000058999A9/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H10F77/12485—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP comprising nitride compounds, e.g. InGaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

The present invention provides a semiconductor structure which includes a strain compensated superlattice layer comprising a plurality of pairs of constituent layers, with the first constituent layer comprising a material under tensile stress, and the second constituent layer comprising a material under compressive stress, such that the stresses of the adjacent layer compensate one another and lead to reduced defect generation. Appropriate selection of materials provides increased band gap and optical confinement in at least some implementations. The structure is particularly suited to the construction of laser diodes, photodiodes, phototransistors, and heterojunction field effect and bipolar transistors.
PCT/IB2000/000892 1999-03-26 2000-03-01 Semiconductor structures having a strain compensated layer and method of fabrication WO2000058999A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000608410A JP2002540618A (en) 1999-03-26 2000-03-01 Semiconductor structure having strain compensation layer and manufacturing method
EP00940681A EP1183761A2 (en) 1999-03-26 2000-03-01 Semiconductor structures having a strain compensated layer and method of fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27731999A 1999-03-26 1999-03-26
US09/277,319 1999-03-26

Publications (4)

Publication Number Publication Date
WO2000058999A2 WO2000058999A2 (en) 2000-10-05
WO2000058999A3 true WO2000058999A3 (en) 2001-01-04
WO2000058999B1 WO2000058999B1 (en) 2001-08-02
WO2000058999A9 WO2000058999A9 (en) 2002-08-29

Family

ID=23060339

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2000/000892 WO2000058999A2 (en) 1999-03-26 2000-03-01 Semiconductor structures having a strain compensated layer and method of fabrication

Country Status (4)

Country Link
EP (1) EP1183761A2 (en)
JP (1) JP2002540618A (en)
CN (1) CN1347581A (en)
WO (1) WO2000058999A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
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US9012250B2 (en) 2009-06-30 2015-04-21 Koninklijke Philips Electronics N.V. Controlling pit formation in a III-nitride device

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US7339255B2 (en) 2004-08-24 2008-03-04 Kabushiki Kaisha Toshiba Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
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US7741654B2 (en) 2004-09-16 2010-06-22 Nec Corporation Group III nitride semiconductor optical device
KR100662191B1 (en) 2004-12-23 2006-12-27 엘지이노텍 주식회사 Nitride semiconductor light emitting device and manufacturing method
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EP1883140B1 (en) 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD or LED with superlattice clad layer and graded doping
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DE102011077542B4 (en) 2011-06-15 2020-06-18 Osram Opto Semiconductors Gmbh OPTOELECTRONIC SEMICONDUCTOR BODY AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR BODY
JP5653327B2 (en) 2011-09-15 2015-01-14 株式会社東芝 Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer
CN102368519B (en) * 2011-10-27 2016-04-20 华灿光电股份有限公司 A kind of method improving semiconductor diode multiple quantum well light emitting efficiency
CN102623575A (en) * 2012-04-17 2012-08-01 中国科学院苏州纳米技术与纳米仿生研究所 Structure and method for growing indium gallium arsenide (InGaAs) battery layer on indium phosphide (InP) substrate
CN103022211B (en) * 2012-12-28 2015-02-11 南京大学 Polarization-reinforced p-i-n junction InGaN solar cell
CN103137799B (en) * 2013-01-27 2015-03-04 厦门大学 Preparation method of steep interface GaN or AlGaN superlattice
CN103151435B (en) * 2013-01-30 2015-05-06 东南大学 Gallium nitride base light-emitting diode with composite potential barrier
CN103715606A (en) * 2013-12-18 2014-04-09 武汉华工正源光子技术有限公司 Method for modulating doped type multi-period strain compensation quantum well epitaxial growth
JP6986349B2 (en) 2014-05-27 2021-12-22 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd Electronic device with n-type superlattice and p-type superlattice
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CN105514234A (en) * 2015-12-14 2016-04-20 安徽三安光电有限公司 Nitride light emitting diode and growth method thereof
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JPWO2017221519A1 (en) * 2016-06-20 2019-04-11 ソニー株式会社 Nitride semiconductor element, nitride semiconductor substrate, method for manufacturing nitride semiconductor element, and method for manufacturing nitride semiconductor substrate
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Publication number Priority date Publication date Assignee Title
US9012250B2 (en) 2009-06-30 2015-04-21 Koninklijke Philips Electronics N.V. Controlling pit formation in a III-nitride device

Also Published As

Publication number Publication date
JP2002540618A (en) 2002-11-26
WO2000058999B1 (en) 2001-08-02
CN1347581A (en) 2002-05-01
WO2000058999A2 (en) 2000-10-05
EP1183761A2 (en) 2002-03-06
WO2000058999A9 (en) 2002-08-29

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