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WO2000065659A1 - Procede de fabrication d'une micro-machine - Google Patents

Procede de fabrication d'une micro-machine Download PDF

Info

Publication number
WO2000065659A1
WO2000065659A1 PCT/JP2000/002739 JP0002739W WO0065659A1 WO 2000065659 A1 WO2000065659 A1 WO 2000065659A1 JP 0002739 W JP0002739 W JP 0002739W WO 0065659 A1 WO0065659 A1 WO 0065659A1
Authority
WO
WIPO (PCT)
Prior art keywords
sphere
film
electrode
forming
sacrificial film
Prior art date
Application number
PCT/JP2000/002739
Other languages
English (en)
Japanese (ja)
Inventor
Masayoshi Esashi
Takao Murakoshi
Shigeru Nakamura
Nobuo Takeda
Original Assignee
Tokimec Inc.
Ball Semiconductor Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokimec Inc., Ball Semiconductor Limited filed Critical Tokimec Inc.
Priority to CA002371669A priority Critical patent/CA2371669A1/fr
Priority to AU41426/00A priority patent/AU4142600A/en
Publication of WO2000065659A1 publication Critical patent/WO2000065659A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/13—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by measuring the force required to restore a proofmass subjected to inertial forces to a null position
    • G01P15/131—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by measuring the force required to restore a proofmass subjected to inertial forces to a null position with electrostatic counterbalancing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1017—Shape being a sphere

Definitions

  • the present invention relates to a method for manufacturing a micromachine or a spherical sensor-type measuring device comprising a microspherical sensor portion and a peripheral portion or an surrounding electrode surrounding the microspherical sensor portion, and particularly to a microsphere having a diameter of several millimeters or less and a microsphere.
  • the present invention relates to a method for manufacturing a micro electrode body.
  • Such a device typically includes a microsphere, an electric or magnetic field generator for levitating the microsphere, and a pickup for detecting displacement of the sphere.
  • the levitated sphere is rotated at high speed.
  • the electric or magnetic field generator and the displacement detection pickup typically have a plurality of electrodes, and these electrodes are arranged close to the microsphere.
  • microspheres and surrounding electrodes have been manufactured and assembled separately. Therefore, a suitable method for precisely manufacturing the microspheres and the surrounding electrodes simultaneously and placing them closely and accurately is unknown.
  • an object of the present invention is to provide a method for accurately and easily manufacturing a microsphere and a microelectrode arranged in the vicinity of the microsphere.
  • An object of the present invention is to provide a method for manufacturing a microsphere and a microsphere surrounding the microsphere, and forming an electrode on the inner surface of the microsphere.
  • a sacrificial film is formed so as to cover the sphere, and a structural film for forming a surrounding portion is formed on the sacrificial film. Forming a hole in the structural film to expose the sacrificial film; and removing the sacrificial film.
  • the sphere and the electrode arranged close to it can be manufactured simultaneously and accurately.
  • microspheres and microelectrodes can be manufactured simultaneously and precisely.
  • the sacrificial film includes a step of completely covering the entire surface of the sphere, and the sphere is removed by removing the sacrificial film. Completely separated from the head. Or forming a hole in the sacrificial film to expose the sphere, and forming the structural film so as to connect to the exposed sphere, and removing the sacrificial film.
  • the sphere is supported by the support from the periphery.
  • the sphere is supported by columns from the peripheral portion.
  • a method for manufacturing a sphere and an electrode body includes: a step of forming a sacrificial film on the surface of the sphere; a step of forming a plurality of electrode patterns made of a conductive film on the sacrificial film; Forming an insulating film so as to crosslink, and removing the sacrificial film. Including.
  • the step of forming the insulating film includes: forming a second sacrificial film so as to cover the sacrificial film on which the electrode pattern is formed; Forming a groove pattern on the substrate to expose the electrode pattern, and forming an insulator film so as to connect the plurality of exposed electrode patterns, wherein the step of removing the sacrificial film includes: This includes removing the two sacrificial films.
  • the sphere is made of single crystal or polycrystalline gay.
  • the first and second sacrificial films are gay silicon dioxide films.
  • the conductor film is a polycrystalline gay film.
  • the insulator film is a gay nitride film or a high-resistance polycrystalline gay film.
  • the sacrificial film is formed so as to completely cover the entire surface of the sphere, and the sphere is removed by removing the sacrificial film. More complete separation.
  • a spherical sensor-type measuring device includes: a sphere functioning as a sensor; a peripheral portion having a spherical inner surface surrounding the sphere; and a plurality of electrode portions formed on the spherical inner surface.
  • FIG. 1 is a sectional view showing the structure of a flying sphere type measuring apparatus according to the present invention.
  • FIG. 2 is a diagram showing the appearance of a flying sphere type measuring apparatus according to the present invention.
  • FIG. 3 is a view showing an electric circuit pattern of the flying sphere type measuring apparatus of the present invention.
  • FIG. 4 is an explanatory diagram for explaining a method of manufacturing the flying sphere type measuring device of the present invention.
  • FIG. 5 is an explanatory diagram for explaining a method of manufacturing the flying sphere type measuring device of the present invention.
  • FIG. 6 is an explanatory diagram for explaining a method of manufacturing a flying sphere measuring device of the present invention.
  • FIG. 7 shows the configuration of the present invention. It is sectional drawing which shows the structure of a flying sphere type measuring device.
  • FIG. 8 is an explanatory diagram for explaining a method of manufacturing the non-floating sphere type measuring apparatus of the present invention in FIG.
  • the apparatus of this example includes a spherical mass 10 and a surrounding spherical casing 100 surrounding it.
  • the outer diameter of the mass 10 is It is slightly smaller than the inner diameter of the spherical inner surface of 00.
  • a gap 11 is formed around the mass 10. This gap 11 is a closed space and may be a vacuum, but may be filled with a suitable inert gas.
  • the diameter of the mass 10 is less than a few millimeters, and the thickness of the gap 11 can be several micrometers.
  • the casing 100 On the spherical inner surface of the casing 100, there are six electrodes 101, 102, 103, 104, 105, 106 (in FIG. 1, electrodes 101, 106). 102, 105, and 106 are shown) and a shield electrode 107 arranged therebetween.
  • the six electrodes 101 to 106 may be used for power supply and control, for example, and the shield electrode 107 may be used for grounding.
  • the six electrodes 101 to 106 and the shield electrode 107 are separated from each other by narrow grooves, but are connected to each other by a bridge 130 provided on the outer surface thereof, It forms an integral structure.
  • Electrodes 101 to 106 and 107 are formed of a conductor, and the bridge 130 is formed of an insulator. Ke An insulating protective film 132 is formed on the outer surface of the substrate 100. Terminals 111 to 116 and 117 (see FIG. 2B) are connected to these electrodes 101 to L06 and 107, respectively. These terminals 11 1 to 1 16 and 1 17 will be described below.
  • FIG. 3 is an external view of the apparatus of this example.
  • the six electrodes 101 to 106 are circular as indicated by broken lines, and are each arranged along three orthogonal axes. The remaining part of the six electrodes 101 to 106 is a shield electrode 107.
  • Terminals 111 to 116 and 117 are arranged at positions corresponding to the electrodes 101 to 106 and 107, respectively, and each electrode and the corresponding terminal are electrically connected. From these terminals 11 1 to 1 16 and 1 17, circuit patterns 12 1 to 12 6 and 12 7 (FIG. 2B) extend.
  • the tips of the electric circuit patterns 121 to 126, 127 are concentrated on the lower side of the outer surface of the casing 100.
  • the distal ends of the electrical circuit patterns 121 to 126, 127 are arranged along the same circle, for example, as shown in the figure.
  • the six electrodes 101 to 106 and the shield electrode 107 are connected to an external device (not shown) having electrode terminals similarly arranged along the same circle. be able to.
  • Each of 6 comprises a pair of electrode parts, and accordingly, the terminals 111 to 116 connected to the electrodes 101 to 106 each comprise a pair of terminals. Therefore, the circuit pattern extending from these terminals is Including two.
  • the number of terminals 117 connected to the shield electrode 107 and the number of electric circuit patterns 127 extending therefrom are one each.
  • a sphere 10 composed of a gay element S i, preferably a single-crystal gay element S i is prepared. This is 10 parts by mass.
  • the first insulator film on the surface of a sphere 1 for example, a film 1 2 of silicon dioxide S i 0 2. This may be done by chemical vapor deposition (CVD).
  • an electrode pattern made of a conductor film is formed.
  • a conductor film for example, a polycrystalline silicon Si film 14 is formed on the entire surface so as to cover the first insulator film 12.
  • an electrode pattern groove 15 is formed in the polycrystalline silicon Si film 14 by etching.
  • the electrode pattern grooves 15 are formed in six thin annular shapes corresponding to the shapes of the six electrodes 101 to 106. Thus, an electrode pattern is formed inside the six annular grooves.
  • a shield electrode pattern is formed on the outside.
  • the electrode pattern may have a shape other than this example.
  • a second insulator film that is, a film 16 of the second gay silicon dioxide Sio 2 is formed.
  • This may be done by chemical vapor deposition (CVD).
  • silicon dioxide S i 0 2 is Ru is Takashi ⁇ in Figure 4 C electrode Bata Ichinmizo 1 5 formed in step. Therefore, the first silicon dioxide film 12 and the second silicon dioxide film 16 are connected via the electrode pattern groove 15.
  • the first and second insulator films 12 and 16 made of silicon dioxide are called a dummy film or a sacrificial film because they are removed later.
  • a bridge pattern groove 17 is formed in the second silicon dioxide film 16 by etching.
  • An appropriate number of bridge pattern grooves 17 are provided on both sides of the electrode pattern groove 15 that forms the boundary between the six electrode patterns and the shield electrode pattern.
  • the conductor film, that is, the film 14 of polycrystalline silicon S i is exposed in the portion of the groove 17.
  • an insulating film for example, a silicon nitride S
  • a film 18 of 13 N 4 is formed.
  • the gay nitride film 18 is formed along the electrode pattern groove 15 and so as to cover the bridge pattern groove 17 formed in the second silicon dioxide film 16.
  • the exposed electrode pattern and the shield electrode pattern are connected by the silicon nitride Si 3 N 4 .
  • the two sacrificial films, ie, the first and second silicon dioxide films 12, 16 are removed.
  • the silicon dioxide filling the electrode pattern grooves 15 formed in the polycrystalline silicon film 14 is also removed.
  • the sphere 10 of single-crystal gayon is separated from the surrounding part, and a mass part 10 is formed.
  • Removal of silicon dioxide is achieved by using an appropriate solution that dissolves silicon dioxide but does not dissolve single crystal silicon spheres 10, polycrystalline silicon film 14, and silicon nitride film 18. .
  • This solution first dissolves the second silicon dioxide film 16 and then dissolves the silicon dioxide filling the electrode pattern groove 15. Further, the first silicon dioxide film 12 is dissolved through the groove 15.
  • a protective film made of an insulator film is formed. As shown in FIG. 6B, a third silicon dioxide film is formed so as to cover the entire casing 100.
  • CVD chemical vapor deposition
  • the protective film By forming the protective film in this way, the mass
  • the gap 11 formed outside the portion 10 becomes a closed space.
  • This closed space may be vacuum, as described above, but may be filled with a suitable inert gas.
  • a terminal pattern groove 21 is formed in the third silicon dioxide film 20.
  • the terminal pattern grooves 21 are provided at positions corresponding to the six electrode patterns and the shield electrodes.
  • a wiring pattern made of a metal thin film is formed on the third silicon dioxide film 20.
  • the terminal 22 is formed as shown in FIG. 6C.
  • the terminals 22 are formed so as to be connected to the six electrode patterns and the shield electrode pattern, respectively.
  • an electric circuit pattern (see FIG. 2) extending from the terminal 22 is also formed.
  • the device of the present example includes a spherical mass portion 10 and a surrounding spherical casing 100 surrounding the mass portion 10.
  • the mass portion 10 is supported by a supporting column 110 to form a peripheral spherical casing. Supported by Thing 100.
  • the support 1 110 is
  • a method for manufacturing the device of FIG. 7 will be described.
  • a sphere 10 made of a gay element S i preferably a single crystal gay element S i is prepared. This is the mass 10.
  • the first insulator film on the surface of a sphere 1 0, for example, a film 1 2 of silicon dioxide S i 0 2. This may be done by chemical vapor deposition (CVD).
  • CVD chemical vapor deposition
  • a groove 13 is formed at a position where the column 11 is to be formed by etching, and the sphere 10 is exposed.
  • a conductive film for example, a polycrystalline silicon Si film 14 is formed on the entire surface so as to cover the first insulating film 12.
  • the polycrystalline silicon Si is filled in the groove 13 of the first insulator film 12.
  • an electrode pattern groove 15 is formed in the polycrystalline silicon Si film 14 by etching.
  • the electrode butter grooves 15 are formed in six thin annular shapes corresponding to the shapes of the six electrodes 101 to 106.
  • an electrode pattern is formed inside the six annular grooves, and a shield electrode pattern is formed outside thereof.
  • the method described with reference to FIGS. 5 and 6 holds as it is.
  • the second insulating film i.e., the second layer 1 6 dioxide Geimoto S i 0 2 formed, as shown in FIG. 5 B, a second silicon dioxide film 1 A bridge pattern groove 17 is formed in 6.
  • an insulator film for example, a silicon nitride Si 3 N
  • a film 18 of 4 is formed.
  • the two sacrificial films that is, the first and second silicon dioxide films 12, 16 are removed.
  • the single crystal silicon sphere 10 is separated from the surrounding part except for the support pillar 110 to form a mass 10.
  • a third silicon dioxide film 20 is formed, and as shown in FIG. 6C, a wiring pattern made of a metal thin film is formed on the third silicon dioxide film 20. As a result, terminals 22 are formed.o
  • the support 110 is a conductive film, that is, polycrystalline silicon.
  • the support 110 is made of a conductor like the electrodes 101 to 106 and 107.
  • the support 110 is replaced with a first insulator film, It may be formed by the element S i 0 2.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un dispositif de mesure à sphère flottante, comprenant une sphère flottante et des électrodes entourant la sphère. Ledit procédé consiste à former un premier film sacrificiel sur la surface de la sphère, à former des modèles d'électrodes comprenant un film conducteur sur le premier film sacrificiel, à former un second film sacrificiel de manière à couvrir le premier film sacrificiel formé de modèles d'électrodes, à former des modèles de rainures dans le second film sacrificiel servant à exposer les modèles d'électrodes, à former un film isolant servant à connecter plusieurs modèles d'électrodes exposés, et à retirer le premier et le second film sacrificiels.
PCT/JP2000/002739 1999-04-27 2000-04-27 Procede de fabrication d'une micro-machine WO2000065659A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CA002371669A CA2371669A1 (fr) 1999-04-27 2000-04-27 Procede de fabrication d'une micro-machine
AU41426/00A AU4142600A (en) 1999-04-27 2000-04-27 Production method for micro-machine

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12026099 1999-04-27
JP11/120260 1999-04-27

Publications (1)

Publication Number Publication Date
WO2000065659A1 true WO2000065659A1 (fr) 2000-11-02

Family

ID=14781812

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/002739 WO2000065659A1 (fr) 1999-04-27 2000-04-27 Procede de fabrication d'une micro-machine

Country Status (3)

Country Link
AU (1) AU4142600A (fr)
CA (1) CA2371669A1 (fr)
WO (1) WO2000065659A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10327798B2 (en) 2012-05-31 2019-06-25 Ethicon Llc Surgical instrument with orientation sensing

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06335265A (ja) * 1993-05-20 1994-12-02 Sony Corp マイクロマシンの製造方法
JPH09288124A (ja) * 1996-04-22 1997-11-04 Shimadzu Corp 加速度検出装置
JPH1096741A (ja) * 1996-09-24 1998-04-14 Ikyo Kk 運動状態検出装置
JPH10154820A (ja) * 1996-11-25 1998-06-09 Murata Mfg Co Ltd 振動素子の製造方法
JPH10313139A (ja) * 1997-05-09 1998-11-24 Nippon Telegr & Teleph Corp <Ntt> 微小機械装置およびその製造方法
US5955776A (en) * 1996-12-04 1999-09-21 Ball Semiconductor, Inc. Spherical shaped semiconductor integrated circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06335265A (ja) * 1993-05-20 1994-12-02 Sony Corp マイクロマシンの製造方法
JPH09288124A (ja) * 1996-04-22 1997-11-04 Shimadzu Corp 加速度検出装置
JPH1096741A (ja) * 1996-09-24 1998-04-14 Ikyo Kk 運動状態検出装置
JPH10154820A (ja) * 1996-11-25 1998-06-09 Murata Mfg Co Ltd 振動素子の製造方法
US5955776A (en) * 1996-12-04 1999-09-21 Ball Semiconductor, Inc. Spherical shaped semiconductor integrated circuit
JPH10313139A (ja) * 1997-05-09 1998-11-24 Nippon Telegr & Teleph Corp <Ntt> 微小機械装置およびその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MASAKI YAMASHITA ET AL.: "Kyumen handoutai no kangae kata to sono kaihatsu jokyo", DENSHI ZAIRYO, vol. 37, no. 11, 1998, pages 21 - 26, XP002946658 *
NORIO TAKEDA ET AL.: "Balll semiconductor gijutsu to MEMS sensor e no oyo", IEEJ KENKYUKAI SHIRYOU, SMP-99-5-9, 23 July 1999 (1999-07-23), pages 1 - 6, XP002946657 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10327798B2 (en) 2012-05-31 2019-06-25 Ethicon Llc Surgical instrument with orientation sensing
US11278306B2 (en) 2012-05-31 2022-03-22 Cilag Gmbh International Surgical instrument with orientation sensing

Also Published As

Publication number Publication date
AU4142600A (en) 2000-11-10
CA2371669A1 (fr) 2000-11-02

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