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WO2000077863A1 - DIODE ELECTROLUMINESCENTE A SEMI-CONDUCTEUR A BASE DE COMPOSES P Ga(In, Al) DOTEE D'UNE COUCHE FENETRE ZnO - Google Patents

DIODE ELECTROLUMINESCENTE A SEMI-CONDUCTEUR A BASE DE COMPOSES P Ga(In, Al) DOTEE D'UNE COUCHE FENETRE ZnO Download PDF

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Publication number
WO2000077863A1
WO2000077863A1 PCT/DE2000/001937 DE0001937W WO0077863A1 WO 2000077863 A1 WO2000077863 A1 WO 2000077863A1 DE 0001937 W DE0001937 W DE 0001937W WO 0077863 A1 WO0077863 A1 WO 0077863A1
Authority
WO
WIPO (PCT)
Prior art keywords
zno
semiconductor diode
led structure
layer
light emission
Prior art date
Application number
PCT/DE2000/001937
Other languages
German (de)
English (en)
Inventor
Peter Stauss
Berthold Hahn
Konrad Sporrer
Volker HÄRLE
Original Assignee
Osram Opto Semiconductors Gmbh & Co. Ohg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh & Co. Ohg filed Critical Osram Opto Semiconductors Gmbh & Co. Ohg
Publication of WO2000077863A1 publication Critical patent/WO2000077863A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

Definitions

  • Light emission semiconductor diode based on Ga (In, A1) P compounds with ZnO window layer
  • the invention relates to a light-emitting semiconductor diode based on Ga (In, Al) P compounds according to the preamble of claim 1.
  • the present invention relates to such a light-emitting semiconductor diode that has a light emission layer made of zinc oxide (ZnO). having.
  • the decoupling of light from light-emitting semiconductor diodes depends to a particular extent on the optically transparent and electrically conductive cover layer used.
  • the important physical parameters for this are the energy gap, the optical refractive index and the electrical conductivity.
  • a 10-20 ⁇ m thick highly doped GaP layer is usually applied to the light output side of the pn junction.
  • such a layer has an electrical conductivity sufficient for electrical contacting and an optical transparency sufficient for coupling out light.
  • the GaP layer cannot easily be made thinner, since this has a disadvantageous effect on the electrical contacting properties of the layer.
  • the present invention is therefore based on the object of specifying a light-emitting semiconductor diode based on Ga (In, AI) P compounds, with which the light yield can be increased.
  • This object is achieved by a light emission semiconductor diode with the features of claim 1.
  • a preferred method for producing the light-emitting semiconductor diode is the subject of claim 9.
  • Advantageous refinements and developments are the subject of claims 2 to 8 and 10 to 13, respectively.
  • a transparent, electrically conductive contact layer made of doped zinc oxide (ZnO) is applied to at least one side of an LED structure of the diode having a pn junction .
  • a light-emitting semiconductor diode according to the invention can be composed of binary, ternary or quaternary III-V compounds which are composed of the elements indium and / or gallium and / or aluminum from III. Main group and the element phosphorus are formed from the fifth main group.
  • ZnO layers can optionally be applied on one side of the pn junction or on both sides. This at least one layer can be applied by MOVPE (metal organic vapor deposition), MBE (molecular beam epitaxy) or by a sputtering process.
  • MOVPE metal organic vapor deposition
  • MBE molecular beam epitaxy
  • the ZnO layer is advantageously produced by the same crystal growth process by which the laser diode was also produced.
  • the layer thickness, the transparency and the doping of the ZnO layer can be adapted in a wide range for optimal light decoupling and electrical contacting of the LEDs on both the n and p sides.
  • Fig.l is a schematic representation of a vertical section through a light emission semiconductor diode according to a first embodiment of the present invention
  • FIG. 2 shows a schematic illustration of a vertical section through a light emission semiconductor diode according to a second exemplary embodiment of the present invention.
  • an n- or p-doped GaAs substrate 1 is provided, onto which an InGaAlP LED structure 2 with a pn junction 2A is matched in a lattice-matched manner by a suitable crystal growth method such as MOVPE (organometallic gas phase epitaxy) or MBE (molecular beam epitaxy). It can start with an n-doped GaAs substrate 1 and end with a p-doped InGaAlP layer, and vice versa.
  • a single or multiple quantum well structure made of layers with alternating small and large bandgaps can also be provided.
  • an n- or p-doped zinc oxide (ZnO) cover layer or window layer 3 is deposited directly on the LED structure 2. Due to the band gap of 3.35 eV of ZnO at room temperature, this window layer 3 is transparent for the wavelength of the InGaAlP laser diode and for other wavelengths of laser diodes of the Ga (In, Al) P material system.
  • the window layer 3 also serves as an electrical contacting layer for the laser diode. It is particularly advantageous for production if the ZnO layer can be grown using the same crystal growth method as the laser diode, that is to say within one and the same crystal growth apparatus. However, the ZnO layer can also be grown using another growth method, such as a sputtering process.
  • the ZnO layer is applied only on one side. On the opposite side, contact is made through the doped GaAs substrate.
  • ZnO layers 31 and 32 are applied on both sides of the pn junction 2A.
  • the manufacture of such a laser diode can be produced in that a laser diode according to FIG. 1 with the grown ZnO layer 31 is glued to any carrier substrate 5, such as a glass substrate, with a preferably transparent adhesive 4.
  • the GaAs substrate is then preferably removed by etching, whereupon a second ZnO layer 32 of a corresponding doping is applied instead of the removed GaAs substrate.
  • a second ZnO layer 32 of a corresponding doping is applied instead of the removed GaAs substrate.
  • the embodiment according to FIG. 2 can be implemented by a transparent adhesive 4 and a transparent carrier substrate 5 in such a way that the light emitted by the LED is emitted on all sides.
  • a reflective layer can be arranged in the vicinity of the interface of the first ZnO layer 31 with the carrier substrate 5, through which the light emitted by the active layer of the LED in the direction of the carrier substrate 5 in the direction of the front side, ie the second ZnO layer 32 is reflected.
  • the reflective layer could, for example, be formed by the adhesive 4 or additionally applied to the ZnO layer.
  • both the adhesive 4 and the carrier substrate 5 can be made non-transparent, also optimally utilizes the light emitted from the rear for the desired front-side emission.
  • the light decoupling of the LED can be further improved by a granular polycrystalline surface structure of the at least one ZnO layer with unchanged electrical and optical properties.

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  • Led Devices (AREA)

Abstract

L'invention concerne une diode électroluminescente à semi-conducteur à base de composés P Ga(In, Al). Une couche de contact (3) électroconductrice et transparente en oxyde de zinc dopé (ZnO) est appliquée sur au moins une face d'une structure DEL (2) de la diode, présentant une transition pn (2A). Cette couche permet une bonne transparence optique pour le rayonnement optique en raison de son important écart énergétique ainsi qu'un bon contact électrique de la structure DEL (2).
PCT/DE2000/001937 1999-06-14 2000-06-14 DIODE ELECTROLUMINESCENTE A SEMI-CONDUCTEUR A BASE DE COMPOSES P Ga(In, Al) DOTEE D'UNE COUCHE FENETRE ZnO WO2000077863A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19926958A DE19926958B4 (de) 1999-06-14 1999-06-14 Lichtemissions-Halbleiterdiode auf der Basis von Ga (In, AL) P-Verbindungen mit ZnO-Fensterschicht
DE19926958.0 1999-06-14

Publications (1)

Publication Number Publication Date
WO2000077863A1 true WO2000077863A1 (fr) 2000-12-21

Family

ID=7911106

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/001937 WO2000077863A1 (fr) 1999-06-14 2000-06-14 DIODE ELECTROLUMINESCENTE A SEMI-CONDUCTEUR A BASE DE COMPOSES P Ga(In, Al) DOTEE D'UNE COUCHE FENETRE ZnO

Country Status (2)

Country Link
DE (1) DE19926958B4 (fr)
WO (1) WO2000077863A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10118447A1 (de) * 2000-11-07 2002-05-16 United Epitaxy Co Ltd Leuchtdiode und Verfahren zum Herstellen derselben
DE10118448A1 (de) * 2001-02-06 2002-08-22 United Epitaxy Co Leuchtdiode und Verfahren zum Herstellen derselben
GB2413008A (en) * 2004-04-08 2005-10-12 Supernova Optoelectronics Corp GaN-based light-emitting diode
US9437910B2 (en) 2011-08-23 2016-09-06 Mesaplexx Pty Ltd Multi-mode filter

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005047168A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5078803A (en) * 1989-09-22 1992-01-07 Siemens Solar Industries L.P. Solar cells incorporating transparent electrodes comprising hazy zinc oxide
EP0475618A2 (fr) * 1990-09-13 1992-03-18 Mitsubishi Denki Kabushiki Kaisha Méthode pour la fabrication d'un laser à semi-conducteur
US5717226A (en) * 1996-09-18 1998-02-10 Industrial Technology Research Institute Light-emitting diodes and method of manufacturing the same
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2545306B2 (ja) * 1991-03-11 1996-10-16 誠 小長井 ＺｎＯ透明導電膜の製造方法
US5300791A (en) * 1992-09-29 1994-04-05 Industrial Technology Research Institute Light emitting diode
JPH0738150A (ja) * 1993-07-22 1995-02-07 Toshiba Corp 半導体発光装置
US6057562A (en) * 1997-04-18 2000-05-02 Epistar Corp. High efficiency light emitting diode with distributed Bragg reflector

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5078803A (en) * 1989-09-22 1992-01-07 Siemens Solar Industries L.P. Solar cells incorporating transparent electrodes comprising hazy zinc oxide
EP0475618A2 (fr) * 1990-09-13 1992-03-18 Mitsubishi Denki Kabushiki Kaisha Méthode pour la fabrication d'un laser à semi-conducteur
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
US5717226A (en) * 1996-09-18 1998-02-10 Industrial Technology Research Institute Light-emitting diodes and method of manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10118447A1 (de) * 2000-11-07 2002-05-16 United Epitaxy Co Ltd Leuchtdiode und Verfahren zum Herstellen derselben
DE10118447C2 (de) * 2000-11-07 2003-03-13 United Epitaxy Co Leuchtdiode mit transparentem Substrat und Verfahren zum Herstellen einer solchen
DE10118448A1 (de) * 2001-02-06 2002-08-22 United Epitaxy Co Leuchtdiode und Verfahren zum Herstellen derselben
GB2413008A (en) * 2004-04-08 2005-10-12 Supernova Optoelectronics Corp GaN-based light-emitting diode
GB2413008B (en) * 2004-04-08 2006-06-28 Supernova Optoelectronics Corp GaN-based light-emitting diode structure
US9437910B2 (en) 2011-08-23 2016-09-06 Mesaplexx Pty Ltd Multi-mode filter

Also Published As

Publication number Publication date
DE19926958A1 (de) 2001-01-11
DE19926958B4 (de) 2008-07-31

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