[go: up one dir, main page]

WO2001086038A3 - Materiaux a bande interdite photonique a base de germanium - Google Patents

Materiaux a bande interdite photonique a base de germanium Download PDF

Info

Publication number
WO2001086038A3
WO2001086038A3 PCT/CA2001/000621 CA0100621W WO0186038A3 WO 2001086038 A3 WO2001086038 A3 WO 2001086038A3 CA 0100621 W CA0100621 W CA 0100621W WO 0186038 A3 WO0186038 A3 WO 0186038A3
Authority
WO
WIPO (PCT)
Prior art keywords
germanium
template
photonic
materials
pbg
Prior art date
Application number
PCT/CA2001/000621
Other languages
English (en)
Other versions
WO2001086038A2 (fr
Inventor
Garcia Hernan Miguez
Sajeev John
Emmanuel Benjamin Chomski
Fernandez Ceferino Lopez
Rico Francisco Javier Meseguer
Geoffrey Alan Ozin
Original Assignee
Univ Valencia Politecnica
Consejo Superior Investigacion
Garcia Hernan Miguez
Sajeev John
Emmanuel Benjamin Chomski
Fernandez Ceferino Lopez
Rico Francisco Javier Meseguer
Ozin Geoffrey A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Valencia Politecnica, Consejo Superior Investigacion, Garcia Hernan Miguez, Sajeev John, Emmanuel Benjamin Chomski, Fernandez Ceferino Lopez, Rico Francisco Javier Meseguer, Ozin Geoffrey A filed Critical Univ Valencia Politecnica
Priority to AU2001258087A priority Critical patent/AU2001258087A1/en
Publication of WO2001086038A2 publication Critical patent/WO2001086038A2/fr
Publication of WO2001086038A3 publication Critical patent/WO2001086038A3/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B5/00—Single-crystal growth from gels
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Optical Integrated Circuits (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

L'invention concerne des matériaux à bande interdite photonique à base de germanium ainsi que des procédés de synthèse de matériaux à bande interdite photonique (BIP) à base de germanium. Cette synthèse et caractérisation sont celles de matériaux à bande interdite photonique (BIP) cubique à faces centrées de pur germanium, de grande qualité, à très grande échelle, possédant des BIP tridimensionnelles dans la région proche infrarouge. Deux procédés différents permettent d'obtenir ce résultat. (1) Par infiltration d'un gabarit d'opale de silice auto-assemblant avec un alcoxyde de germanium qui est ensuite soumis à hydrolyse afin de former un oxyde de germanium(IV). Ce composé est ensuite réduit à un germanium(0) dans une atmosphère hydrogène. Ce cycle est répété jusqu'à ce que l'infiltration de germanium voulue soit atteinte. Une fois que le réseau hôte de germanium est formé, le gabarit est retiré et une opale inverse de germanium est obtenue. (2) Par déposition chimique en phase vapeur de germanium dans un gabarit d'opale de silice auto-assemblant, puis par retrait du gabarit. Par cette invention, un objectif de longue date est atteint dans le domaine des matériaux photoniques et de nouvelles possibilités se présentent, permettant la commande totale des émissions radiatives des atomes et des molécules, la localisation de la lumière et l'intégration de dispositifs photoniques à l'échelle des microns dans un mini circuit intégré entièrement optique tridimensionnel.
PCT/CA2001/000621 2000-05-05 2001-05-04 Materiaux a bande interdite photonique a base de germanium WO2001086038A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001258087A AU2001258087A1 (en) 2000-05-05 2001-05-04 Photonic bandgap materials based on germanium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20211500P 2000-05-05 2000-05-05
US60/202,115 2000-05-05

Publications (2)

Publication Number Publication Date
WO2001086038A2 WO2001086038A2 (fr) 2001-11-15
WO2001086038A3 true WO2001086038A3 (fr) 2002-05-10

Family

ID=22748551

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2001/000621 WO2001086038A2 (fr) 2000-05-05 2001-05-04 Materiaux a bande interdite photonique a base de germanium

Country Status (2)

Country Link
AU (1) AU2001258087A1 (fr)
WO (1) WO2001086038A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101050675B1 (ko) * 2002-12-13 2011-07-21 알카텔-루센트 유에스에이 인코포레이티드 프레임워크의 도움을 받는 결정 성장

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005503460A (ja) 2001-09-14 2005-02-03 メルク　パテント　ゲゼルシャフト　ミット　ベシュレンクテル　ハフトング コア−シェル粒子からなる成形体
DE10204339A1 (de) 2002-02-01 2003-08-07 Merck Patent Gmbh Dehnungs- und Stauchungssensor
DE10227071A1 (de) 2002-06-17 2003-12-24 Merck Patent Gmbh Verbundmaterial enthaltend Kern-Mantel-Partikel
AU2003302222A1 (en) 2002-07-22 2004-06-30 Massachusetts Institute Of Technolgoy Porous material formation by chemical vapor deposition onto colloidal crystal templates
US20040062700A1 (en) * 2002-09-27 2004-04-01 Hernan Miguez Mechanical stability enhancement by pore size and connectivity control in colloidal crystals by layer-by-layer growth of oxide
DE10245848A1 (de) * 2002-09-30 2004-04-01 Merck Patent Gmbh Verfahren zur Herstellung inverser opalartiger Strukturen
GB0302655D0 (en) 2003-02-05 2003-03-12 Univ Cambridge Tech Deposition of layers on substrates
US7767903B2 (en) 2003-11-10 2010-08-03 Marshall Robert A System and method for thermal to electric conversion
US7106938B2 (en) 2004-03-16 2006-09-12 Regents Of The University Of Minnesota Self assembled three-dimensional photonic crystal
DE102004052456B4 (de) * 2004-09-30 2007-12-20 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5385114A (en) * 1992-12-04 1995-01-31 Milstein; Joseph B. Photonic band gap materials and method of preparation thereof
US5600483A (en) * 1994-05-10 1997-02-04 Massachusetts Institute Of Technology Three-dimensional periodic dielectric structures having photonic bandgaps
WO1999009439A1 (fr) * 1997-08-18 1999-02-25 Isis Innovation Limited Matieres de cristal photonique et procede de preparation de celles-ci
WO2000010040A1 (fr) * 1998-08-11 2000-02-24 Massachusetts Institute Of Technology Cristaux photoniques composites
WO2000021905A1 (fr) * 1998-10-13 2000-04-20 Alliedsignal Inc. Ensembles de structures periodiques tridimensionnelles a des echelles nanometrique et superieure
WO2001055484A2 (fr) * 2000-01-28 2001-08-02 The Governing Council Of The University Of Toronto Matières de bande interdite photonique à base de silicium

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5385114A (en) * 1992-12-04 1995-01-31 Milstein; Joseph B. Photonic band gap materials and method of preparation thereof
US5600483A (en) * 1994-05-10 1997-02-04 Massachusetts Institute Of Technology Three-dimensional periodic dielectric structures having photonic bandgaps
WO1999009439A1 (fr) * 1997-08-18 1999-02-25 Isis Innovation Limited Matieres de cristal photonique et procede de preparation de celles-ci
WO2000010040A1 (fr) * 1998-08-11 2000-02-24 Massachusetts Institute Of Technology Cristaux photoniques composites
WO2000021905A1 (fr) * 1998-10-13 2000-04-20 Alliedsignal Inc. Ensembles de structures periodiques tridimensionnelles a des echelles nanometrique et superieure
WO2001055484A2 (fr) * 2000-01-28 2001-08-02 The Governing Council Of The University Of Toronto Matières de bande interdite photonique à base de silicium

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BUSCH K ET AL: "Photonic band gap formation in certain self-organizing systems", PHYSICAL REVIEW E. STATISTICAL PHYSICS, PLASMAS, FLUIDS, AND RELATED INTERDISCIPLINARY TOPICS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 58, no. 3, September 1998 (1998-09-01), pages 3896 - 3908, XP002130697, ISSN: 1063-651X *
JOHN S ET AL: "PHOTONIC BANDGAP FORMATION AND TUNABILITY IN CERTAIN SELF-ORGANIZING SYSTEMS", JOURNAL OF LIGHTWAVE TECHNOLOGY, IEEE. NEW YORK, US, vol. 17, no. 11, November 1999 (1999-11-01), pages 1931 - 1943, XP001033253, ISSN: 0733-8724 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101050675B1 (ko) * 2002-12-13 2011-07-21 알카텔-루센트 유에스에이 인코포레이티드 프레임워크의 도움을 받는 결정 성장

Also Published As

Publication number Publication date
WO2001086038A2 (fr) 2001-11-15
AU2001258087A1 (en) 2001-11-20

Similar Documents

Publication Publication Date Title
WO2001086038A3 (fr) Materiaux a bande interdite photonique a base de germanium
García‐Santamaría et al. A germanium inverse woodpile structure with a large photonic band gap
US20060137601A1 (en) Method of synthesis of 3d silicon colloidal photonic crystals by micromolding in inverse silica opal (miso)
CN103882514B (zh) 一种半导体CdS/CdSSe异质结纳米线及其制备方法
US5958577A (en) Transparent bulk silica porous material with uniform pore size and distribution
CN109650354A (zh) 一种二维碲化铅纳米片的制备方法、应用和一种纳米材料
EP2102123B1 (fr) Matériaux condensés
CN102181920B (zh) 制备荧光从紫外到红的硫硒化镉锌纳米线的方法及装置
Gurin et al. Structure and optical properties of CuxO-and CuxSe-doped sol–gel silica glasses
WO2001055484A3 (fr) Matières de bande interdite photonique à base de silicium
US8202437B2 (en) Method for producing a photonic crystal
CN105152144B (zh) 一种合成三元纤锌矿硫硒化锰纳米棒的方法
Nabil et al. Silica nanoparticles preparation using alkali etching process
Noma et al. Preparation of new photosensitive ZrO2 gel films using hydroxyl-substituted aromatic ketones as chemical modification reagents and their patterning
Zamchiy et al. Tin-catalyzed oriented array of microropes of silicon oxide nanowires synthesized on different substrates
Gurin et al. Cu2Se nanoparticles in sol–gel silica glasses
Kawamura et al. Proton‐implantation‐induced nanosized Ge crystal formation in SiO2: GeO2 glasses
Kalyanikutty et al. Synthesis and characterization of germanium oxide nanowires
Jiang et al. Tunable alumina 2D photonic-crystal structures via biomineralization of peacock tail feathers
CN103065956B (zh) 一种实现硅表面结构平滑的方法与设备
RU2839768C1 (ru) Способ изготовления пленки просветляющего покрытия для водорастворимых кристаллов
Yang et al. Visible room-temperature photoluminescence of Ge-doped SiO2 glasses fabricated by a sol–gel process
Galusha et al. Oxide-based photonic crystals from biological templates
CN106367063B (zh) 一种S掺杂SiO2微球及其制备方法
Notomi et al. 2D SOI photonic crystal slab and line-defect waveguide

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP