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WO2002007221A3 - Embedded decoupling capacitor - Google Patents

Embedded decoupling capacitor Download PDF

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Publication number
WO2002007221A3
WO2002007221A3 PCT/EP2001/008044 EP0108044W WO0207221A3 WO 2002007221 A3 WO2002007221 A3 WO 2002007221A3 EP 0108044 W EP0108044 W EP 0108044W WO 0207221 A3 WO0207221 A3 WO 0207221A3
Authority
WO
WIPO (PCT)
Prior art keywords
region
cells
opc structures
opc
structures
Prior art date
Application number
PCT/EP2001/008044
Other languages
French (fr)
Other versions
WO2002007221A2 (en
Inventor
Archibald J Allen
Orest Bula
John M Cohn
Daniel Cole
Edward W Conrad
William C Leipold
Original Assignee
Ibm
Ibm Deutschland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/705,031 external-priority patent/US6429469B1/en
Application filed by Ibm, Ibm Deutschland filed Critical Ibm
Priority to AU2001287605A priority Critical patent/AU2001287605A1/en
Publication of WO2002007221A2 publication Critical patent/WO2002007221A2/en
Publication of WO2002007221A3 publication Critical patent/WO2002007221A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/22—Subject matter not provided for in other groups of this subclass including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

A structure for a semiconductor chip which includes a first region having first cells for storing and processing data, and a second region outside the first region having OPC structures, wherein the OPC structures comprise decoupling capacitors. The line widths of the active gates of first cells are the same size or similar in size as the OPC structures. The OPC structures reduce proximity effects of active devices in the first cells, and comprise N-type FETs and P-type FETs, that are located in the second region. The OPC structures may have a width greater than the first cells. The second region can be multiple OPC structures, whereby the second region comprises multiple decoupling capacitors. The active devices in the first cells are separated by a first distance and the OPC structures are separated from the active devices by the first distance.
PCT/EP2001/008044 2000-07-14 2001-07-12 Embedded decoupling capacitor WO2002007221A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001287605A AU2001287605A1 (en) 2000-07-14 2001-07-12 Embedded decoupling capacitor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US61648500A 2000-07-14 2000-07-14
US09/616,485 2000-07-14
US09/705,031 US6429469B1 (en) 2000-11-02 2000-11-02 Optical Proximity Correction Structures Having Decoupling Capacitors
US09/705,031 2000-11-02

Publications (2)

Publication Number Publication Date
WO2002007221A2 WO2002007221A2 (en) 2002-01-24
WO2002007221A3 true WO2002007221A3 (en) 2002-06-13

Family

ID=27087765

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/008044 WO2002007221A2 (en) 2000-07-14 2001-07-12 Embedded decoupling capacitor

Country Status (4)

Country Link
JP (1) JP2002083873A (en)
AU (1) AU2001287605A1 (en)
TW (1) TW582111B (en)
WO (1) WO2002007221A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6407900B2 (en) 2016-02-04 2018-10-17 株式会社東芝 Semiconductor integrated circuit

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0558133A1 (en) * 1992-02-27 1993-09-01 Koninklijke Philips Electronics N.V. CMOS integrated circuit
US5361234A (en) * 1992-03-26 1994-11-01 Nec Corporation Semiconductor memory cell device having dummy capacitors reducing boundary level changes between a memory cell array area and a peripheral circuit area
US5631492A (en) * 1994-01-21 1997-05-20 Motorola Standard cell having a capacitor and a power supply capacitor for reducing noise and method of formation
US5879844A (en) * 1995-12-22 1999-03-09 Kabushiki Kaisha Toshiba Optical proximity correction method
JPH11111718A (en) * 1997-10-08 1999-04-23 Matsushita Electron Corp Semiconductor device and its manufacture
US5998846A (en) * 1998-03-30 1999-12-07 Vanguard International Semiconductor Corporation Layout structure of multi-use coupling capacitors in reducing ground bounces and replacing faulty logic components

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0558133A1 (en) * 1992-02-27 1993-09-01 Koninklijke Philips Electronics N.V. CMOS integrated circuit
US5361234A (en) * 1992-03-26 1994-11-01 Nec Corporation Semiconductor memory cell device having dummy capacitors reducing boundary level changes between a memory cell array area and a peripheral circuit area
US5631492A (en) * 1994-01-21 1997-05-20 Motorola Standard cell having a capacitor and a power supply capacitor for reducing noise and method of formation
US5879844A (en) * 1995-12-22 1999-03-09 Kabushiki Kaisha Toshiba Optical proximity correction method
JPH11111718A (en) * 1997-10-08 1999-04-23 Matsushita Electron Corp Semiconductor device and its manufacture
US5998846A (en) * 1998-03-30 1999-12-07 Vanguard International Semiconductor Corporation Layout structure of multi-use coupling capacitors in reducing ground bounces and replacing faulty logic components

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 09 30 July 1999 (1999-07-30) *

Also Published As

Publication number Publication date
WO2002007221A2 (en) 2002-01-24
JP2002083873A (en) 2002-03-22
AU2001287605A1 (en) 2002-01-30
TW582111B (en) 2004-04-01

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