WO2003046999A1 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

Info

Publication number: WO2003046999A1
Authority: WO; WIPO (PCT)
Prior art keywords: diffusion region; trench; source trench; width; buried
Prior art date: 2001-11-30

Application number

PCT/JP2002/012384

Other languages

English (en)

French (fr)

Inventor

Toshiyuki Takemori

Masato Itoi

Yuji Watanabe

Original Assignee

Shindengen Electric Manufacturing Co., Ltd.

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-11-30

Filing date

2002-11-27

Publication date

2003-06-05

2002-11-27 Application filed by Shindengen Electric Manufacturing Co., Ltd. filed Critical Shindengen Electric Manufacturing Co., Ltd.

2002-11-27 Priority to GB0400340A priority Critical patent/GB2393325B/en

2002-11-27 Priority to DE10296970T priority patent/DE10296970B4/de

2002-11-27 Priority to US10/481,016 priority patent/US7102182B2/en

2002-11-27 Priority to JP2003548316A priority patent/JP4183620B2/ja

2002-11-27 Priority to AU2002349581A priority patent/AU2002349581A1/en

2003-06-05 Publication of WO2003046999A1 publication Critical patent/WO2003046999A1/ja

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
- H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

Insulated Gate Type Field-Effect Transistor (AREA)
Electrodes Of Semiconductors (AREA)

PCT/JP2002/012384 2001-11-30 2002-11-27 Semiconductor device and manufacturing method thereof WO2003046999A1 (en)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
GB0400340A GB2393325B (en)	2001-11-30	2002-11-27	Semiconductor device and manufacturing method thereof
DE10296970T DE10296970B4 (de)	2001-11-30	2002-11-27	Halbleitervorrichtung und Verfahren zur Herstellung derselben
US10/481,016 US7102182B2 (en)	2001-11-30	2002-11-27	Semiconductor device
JP2003548316A JP4183620B2 (ja)	2001-11-30	2002-11-27	半導体装置およびその製造方法
AU2002349581A AU2002349581A1 (en)	2001-11-30	2002-11-27	Semiconductor device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2001-365641		2001-11-30
JP2001365641		2001-11-30

Publications (1)

Publication Number	Publication Date
WO2003046999A1 true WO2003046999A1 (en)	2003-06-05

Family

ID=19175635

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
PCT/JP2002/012384 WO2003046999A1 (en)	2001-11-30	2002-11-27	Semiconductor device and manufacturing method thereof

Country Status (6)

Country	Link
US (1)	US7102182B2 (ja)
JP (1)	JP4183620B2 (ja)
AU (1)	AU2002349581A1 (ja)
DE (1)	DE10296970B4 (ja)
GB (1)	GB2393325B (ja)
WO (1)	WO2003046999A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2005057049A (ja) *	2003-08-04	2005-03-03	Renesas Technology Corp	半導体装置およびその製造方法
JP2005183547A (ja) *	2003-12-17	2005-07-07	Fuji Electric Device Technology Co Ltd	半導体装置およびその製造方法
JP2006140263A (ja) *	2004-11-11	2006-06-01	Sanken Electric Co Ltd	半導体素子及び半導体素子の製造方法
JP2008147339A (ja) *	2006-12-08	2008-06-26	Nec Electronics Corp	半導体装置及びその製造方法
US7776693B2 (en)	2006-09-28	2010-08-17	Nec Electronics Corporation	Method of manufacturing semiconductor apparatus
US8169023B2 (en)	2008-07-16	2012-05-01	Kabushiki Kaisha Toshiba	Power semiconductor device
JP2014063852A (ja) *	2012-09-20	2014-04-10	Toshiba Corp	半導体装置及びその製造方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100593734B1 (ko) *	2004-03-05	2006-06-28	삼성전자주식회사	채널부 홀 내 채널 영역을 갖는 반도체 장치의트랜지스터들 및 그 제조 방법들
US7102201B2 (en) *	2004-07-15	2006-09-05	International Business Machines Corporation	Strained semiconductor device structures
DE112006000832B4 (de)	2005-04-06	2018-09-27	Fairchild Semiconductor Corporation	Trenched-Gate-Feldeffekttransistoren und Verfahren zum Bilden derselben
JP4609656B2 (ja) *	2005-12-14	2011-01-12	サンケン電気株式会社	トレンチ構造半導体装置
US8618601B2 (en) *	2009-08-14	2013-12-31	Alpha And Omega Semiconductor Incorporated	Shielded gate trench MOSFET with increased source-metal contact
US8193580B2 (en)	2009-08-14	2012-06-05	Alpha And Omega Semiconductor, Inc.	Shielded gate trench MOSFET device and fabrication
KR101254843B1 (ko) *	2006-02-17	2013-04-15	칼 짜이스 에스엠티 게엠베하	마이크로리소그래피 투영 노광 장치의 조명 시스템용 광 인터그레이터
US7982284B2 (en) *	2006-06-28	2011-07-19	Infineon Technologies Ag	Semiconductor component including an isolation structure and a contact to the substrate
TW200921912A (en) *	2007-11-05	2009-05-16	Anpec Electronics Corp	Power transistor capable of decreasing capacitance between gate and drain
DE102007057728B4 (de) *	2007-11-30	2014-04-30	Infineon Technologies Ag	Verfahren zur Herstellung eines Halbleiterbauelements mit einer Kurzschlusstruktur
JP5452195B2 (ja) *	2009-12-03	2014-03-26	株式会社日立パワーデバイス	半導体装置及びそれを用いた電力変換装置
US8525254B2 (en)	2010-08-12	2013-09-03	Infineon Technologies Austria Ag	Silicone carbide trench semiconductor device
WO2012055119A1 (zh) *	2010-10-29	2012-05-03	上海韦尔半导体股份有限公司	一种沟槽式mosfet的侧墙结构及其制造方法
CN102623501B (zh) *	2011-01-28	2015-06-03	万国半导体股份有限公司	带有增强型源极-金属接头的屏蔽栅极沟槽金属氧化物半导体场效应管
JP6135364B2 (ja) *	2013-07-26	2017-05-31	住友電気工業株式会社	炭化珪素半導体装置およびその製造方法

Citations (5)

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GB2336721A (en) *	1998-04-23	1999-10-27	Int Rectifier Corp	Trench mosfet structure
US6110799A (en) *	1997-06-30	2000-08-29	Intersil Corporation	Trench contact process
US6188105B1 (en) *	1999-04-01	2001-02-13	Intersil Corporation	High density MOS-gated power device and process for forming same
JP2001094101A (ja) *	1999-09-24	2001-04-06	Toshiba Corp	半導体装置
JP2001284586A (ja) *	2000-03-29	2001-10-12	Sanyo Electric Co Ltd	絶縁ゲート型半導体装置

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US5930630A (en) *	1997-07-23	1999-07-27	Megamos Corporation	Method for device ruggedness improvement and on-resistance reduction for power MOSFET achieved by novel source contact structure
JP3342412B2 (ja) *	1997-08-08	2002-11-11	三洋電機株式会社	半導体装置およびその製造方法
US6429481B1 (en)	1997-11-14	2002-08-06	Fairchild Semiconductor Corporation	Field effect transistor and method of its manufacture
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US6445035B1 (en) *	2000-07-24	2002-09-03	Fairchild Semiconductor Corporation	Power MOS device with buried gate and groove

2002
- 2002-11-27 JP JP2003548316A patent/JP4183620B2/ja not_active Expired - Fee Related
- 2002-11-27 WO PCT/JP2002/012384 patent/WO2003046999A1/ja active Application Filing
- 2002-11-27 GB GB0400340A patent/GB2393325B/en not_active Expired - Lifetime
- 2002-11-27 AU AU2002349581A patent/AU2002349581A1/en not_active Abandoned
- 2002-11-27 US US10/481,016 patent/US7102182B2/en not_active Expired - Lifetime
- 2002-11-27 DE DE10296970T patent/DE10296970B4/de not_active Expired - Lifetime

Patent Citations (5)

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US6110799A (en) *	1997-06-30	2000-08-29	Intersil Corporation	Trench contact process
GB2336721A (en) *	1998-04-23	1999-10-27	Int Rectifier Corp	Trench mosfet structure
US6188105B1 (en) *	1999-04-01	2001-02-13	Intersil Corporation	High density MOS-gated power device and process for forming same
JP2001094101A (ja) *	1999-09-24	2001-04-06	Toshiba Corp	半導体装置
JP2001284586A (ja) *	2000-03-29	2001-10-12	Sanyo Electric Co Ltd	絶縁ゲート型半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2005057049A (ja) *	2003-08-04	2005-03-03	Renesas Technology Corp	半導体装置およびその製造方法
JP2005183547A (ja) *	2003-12-17	2005-07-07	Fuji Electric Device Technology Co Ltd	半導体装置およびその製造方法
JP2006140263A (ja) *	2004-11-11	2006-06-01	Sanken Electric Co Ltd	半導体素子及び半導体素子の製造方法
US7776693B2 (en)	2006-09-28	2010-08-17	Nec Electronics Corporation	Method of manufacturing semiconductor apparatus
US7947556B2 (en)	2006-09-28	2011-05-24	Renesas Electronics Corporation	Method of manufacturing semiconductor apparatus
JP2008147339A (ja) *	2006-12-08	2008-06-26	Nec Electronics Corp	半導体装置及びその製造方法
US8169023B2 (en)	2008-07-16	2012-05-01	Kabushiki Kaisha Toshiba	Power semiconductor device
JP2014063852A (ja) *	2012-09-20	2014-04-10	Toshiba Corp	半導体装置及びその製造方法

Also Published As

Publication number	Publication date
JPWO2003046999A1 (ja)	2005-04-14
JP4183620B2 (ja)	2008-11-19
GB2393325A (en)	2004-03-24
US20040169220A1 (en)	2004-09-02
GB2393325B (en)	2006-04-19
US7102182B2 (en)	2006-09-05
AU2002349581A1 (en)	2003-06-10
GB0400340D0 (en)	2004-02-11
DE10296970B4 (de)	2008-04-24
DE10296970T5 (de)	2004-07-22

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