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WO2003010671A1 - Non-volatile memory and non-volatile memory data rewriting method - Google Patents

Non-volatile memory and non-volatile memory data rewriting method Download PDF

Info

Publication number
WO2003010671A1
WO2003010671A1 PCT/JP2002/007356 JP0207356W WO03010671A1 WO 2003010671 A1 WO2003010671 A1 WO 2003010671A1 JP 0207356 W JP0207356 W JP 0207356W WO 03010671 A1 WO03010671 A1 WO 03010671A1
Authority
WO
WIPO (PCT)
Prior art keywords
volatile memory
data rewriting
area
storing
address
Prior art date
Application number
PCT/JP2002/007356
Other languages
English (en)
French (fr)
Inventor
Mitsuru Nakada
Mitsuhiko Tomita
Original Assignee
Sony Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001225015A external-priority patent/JP3675375B2/ja
Priority claimed from JP2001236928A external-priority patent/JP3646679B2/ja
Application filed by Sony Corporation filed Critical Sony Corporation
Priority to US10/484,322 priority Critical patent/US7240178B2/en
Priority to KR1020047000158A priority patent/KR100877030B1/ko
Publication of WO2003010671A1 publication Critical patent/WO2003010671A1/ja

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/16—Protection against loss of memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B20/00—Signal processing not specific to the method of recording or reproducing; Circuits therefor
    • G11B20/10—Digital recording or reproducing
    • G11B20/18—Error detection or correction; Testing, e.g. of drop-outs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14—Error detection or correction of the data by redundancy in operation
    • G06F11/1402—Saving, restoring, recovering or retrying
    • G06F11/1415—Saving, restoring, recovering or retrying at system level
    • G06F11/1441—Resetting or repowering

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Signal Processing (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
PCT/JP2002/007356 2001-07-25 2002-07-19 Non-volatile memory and non-volatile memory data rewriting method WO2003010671A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/484,322 US7240178B2 (en) 2001-07-25 2002-07-19 Non-volatile memory and non-volatile memory data rewriting method
KR1020047000158A KR100877030B1 (ko) 2001-07-25 2002-07-19 불휘발성 메모리 및 불휘발성 메모리의 데이터 재기록 방법

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001225015A JP3675375B2 (ja) 2001-07-25 2001-07-25 不揮発性メモリ並びに不揮発性メモリのデータ書き換え方法
JP2001-225015 2001-07-25
JP2001-236928 2001-08-03
JP2001236928A JP3646679B2 (ja) 2001-08-03 2001-08-03 不揮発性メモリのデータ書き換え方法

Publications (1)

Publication Number Publication Date
WO2003010671A1 true WO2003010671A1 (en) 2003-02-06

Family

ID=26619260

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/007356 WO2003010671A1 (en) 2001-07-25 2002-07-19 Non-volatile memory and non-volatile memory data rewriting method

Country Status (4)

Country Link
US (1) US7240178B2 (ja)
KR (1) KR100877030B1 (ja)
CN (1) CN1255733C (ja)
WO (1) WO2003010671A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1359585A3 (en) * 2002-04-30 2004-03-10 Samsung Electronics Co., Ltd. Multifunction apparatus with operational data protection
WO2004079575A1 (fr) 2003-03-04 2004-09-16 Netac Technology Co., Ltd. Procede de gestion de donnees pour support a memoire flash
WO2005066973A1 (en) * 2003-12-31 2005-07-21 Sandisk Corporation Flash storage system with write/erase abort detection mechanism
EP1564754A3 (de) * 2004-02-03 2006-09-06 Giesecke & Devrient GmbH Verfahren und Vorrichtung zur Verwaltung von Daten in einem nichtflüchtigen Datenspeicher
CN100349141C (zh) * 2003-06-17 2007-11-14 创惟科技股份有限公司 动态调整非挥发性存储器的冗余区的方法及其相关装置
US7624239B2 (en) 2005-11-14 2009-11-24 Sandisk Corporation Methods for the management of erase operations in non-volatile memories
US7783845B2 (en) 2005-11-14 2010-08-24 Sandisk Corporation Structures for the management of erase operations in non-volatile memories
US8266391B2 (en) 2007-06-19 2012-09-11 SanDisk Technologies, Inc. Method for writing data of an atomic transaction to a memory device
US8775758B2 (en) 2007-12-28 2014-07-08 Sandisk Technologies Inc. Memory device and method for performing a write-abort-safe firmware update

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004310650A (ja) * 2003-04-10 2004-11-04 Renesas Technology Corp メモリ装置
KR100631765B1 (ko) * 2004-10-18 2006-10-09 삼성전자주식회사 플래시 메모리의 데이터 처리 장치 및 방법
US7275140B2 (en) * 2005-05-12 2007-09-25 Sandisk Il Ltd. Flash memory management method that is resistant to data corruption by power loss
US20070016721A1 (en) * 2005-07-18 2007-01-18 Wyse Technology Inc. Flash file system power-up by using sequential sector allocation
JP2007133541A (ja) * 2005-11-09 2007-05-31 Tokyo Electron Device Ltd 記憶装置、メモリ管理装置、メモリ管理方法及びプログラム
JP4418439B2 (ja) * 2006-03-07 2010-02-17 パナソニック株式会社 不揮発性記憶装置およびそのデータ書込み方法
WO2007119267A1 (ja) * 2006-03-13 2007-10-25 Matsushita Electric Industrial Co., Ltd. フラッシュメモリ用のメモリコントローラ
KR100809319B1 (ko) * 2006-09-13 2008-03-05 삼성전자주식회사 플래시 메모리에서 연속한 섹터 쓰기 요청에 대해 원자성을제공하는 장치 및 방법
US20080320253A1 (en) * 2007-06-19 2008-12-25 Andrew Tomlin Memory device with circuitry for writing data of an atomic transaction
US7752175B2 (en) * 2007-10-29 2010-07-06 Objectivity, Inc. Method, system and computer-readable media for repairing corruption of data record references
JP4475320B2 (ja) * 2007-11-15 2010-06-09 株式会社デンソー 車両用記憶管理装置
CN101539891B (zh) * 2008-03-17 2012-12-05 锐迪科微电子（上海）有限公司 一种嵌入式快闪存储器、存储系统及其数据掉电保护方法
KR101543431B1 (ko) * 2008-11-20 2015-08-11 삼성전자주식회사 불휘발성 메모리 시스템 및 그것의 액세스 방법
US7925925B2 (en) 2008-12-30 2011-04-12 Intel Corporation Delta checkpoints for a non-volatile memory indirection table
US8054684B2 (en) * 2009-12-18 2011-11-08 Sandisk Technologies Inc. Non-volatile memory and method with atomic program sequence and write abort detection
US8812908B2 (en) 2010-09-22 2014-08-19 Microsoft Corporation Fast, non-write-cycle-limited persistent memory for secure containers
US9053809B2 (en) * 2011-11-09 2015-06-09 Apple Inc. Data protection from write failures in nonvolatile memory
CN102708019B (zh) * 2012-04-28 2014-12-03 华为技术有限公司 一种硬盘数据恢复方法、装置及系统
CN103514058B (zh) * 2012-06-29 2016-06-15 华为技术有限公司 一种数据失效的处理方法、设备及系统
CN118733128A (zh) * 2015-08-20 2024-10-01 美光科技公司 从nand媒体快速引导的固态存储装置
CN105808386B (zh) * 2016-03-30 2019-02-19 苏州美天网络科技有限公司 硬盘数据恢复校验方法
JP6912240B2 (ja) * 2017-03-29 2021-08-04 ラピスセミコンダクタ株式会社 メモリシステム及びメモリの管理方法
CN107025291A (zh) * 2017-04-14 2017-08-08 新华三技术有限公司 数据的改写方法及装置
US11288007B2 (en) * 2019-05-16 2022-03-29 Western Digital Technologies, Inc. Virtual physical erase of a memory of a data storage device
CN111090542A (zh) * 2019-12-17 2020-05-01 深圳忆联信息系统有限公司 基于异常掉电的异常块识别方法、装置及计算机设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11272569A (ja) * 1998-03-19 1999-10-08 Hitachi Ltd フラッシュメモリを使用した外部記憶装置のデータ回復方式
JP2001147864A (ja) * 1999-11-19 2001-05-29 Seiko Epson Corp フラッシュメモリのデータ管理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05233426A (ja) * 1992-02-20 1993-09-10 Fujitsu Ltd フラッシュ・メモリ使用方法
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
JP4085478B2 (ja) * 1998-07-28 2008-05-14 ソニー株式会社 記憶媒体及び電子機器システム
JP2001147684A (ja) * 1999-11-19 2001-05-29 Matsushita Electric Ind Co Ltd 表示方法および表示装置
US6901499B2 (en) * 2002-02-27 2005-05-31 Microsoft Corp. System and method for tracking data stored in a flash memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11272569A (ja) * 1998-03-19 1999-10-08 Hitachi Ltd フラッシュメモリを使用した外部記憶装置のデータ回復方式
JP2001147864A (ja) * 1999-11-19 2001-05-29 Seiko Epson Corp フラッシュメモリのデータ管理装置

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1359585A3 (en) * 2002-04-30 2004-03-10 Samsung Electronics Co., Ltd. Multifunction apparatus with operational data protection
WO2004079575A1 (fr) 2003-03-04 2004-09-16 Netac Technology Co., Ltd. Procede de gestion de donnees pour support a memoire flash
EP1607867A4 (en) * 2003-03-04 2010-05-26 Netac Technology Co Ltd DATA MANAGEMENT METHOD FOR FLASH MEMORY SUPPORT
US7904635B2 (en) 2003-03-04 2011-03-08 Netac Technology Co., Ltd. Power cut data recovery and data management method for flash media
CN100349141C (zh) * 2003-06-17 2007-11-14 创惟科技股份有限公司 动态调整非挥发性存储器的冗余区的方法及其相关装置
KR100992985B1 (ko) * 2003-12-31 2010-11-08 쌘디스크 코포레이션 쓰기/삭제 중단 검출 메카니즘을 갖는 플래시 저장 시스템
WO2005066973A1 (en) * 2003-12-31 2005-07-21 Sandisk Corporation Flash storage system with write/erase abort detection mechanism
US7299314B2 (en) 2003-12-31 2007-11-20 Sandisk Corporation Flash storage system with write/erase abort detection mechanism
US7669004B2 (en) 2003-12-31 2010-02-23 Sandisk Corporation Flash storage system with write-erase abort detection mechanism
EP1564754A3 (de) * 2004-02-03 2006-09-06 Giesecke & Devrient GmbH Verfahren und Vorrichtung zur Verwaltung von Daten in einem nichtflüchtigen Datenspeicher
US7624239B2 (en) 2005-11-14 2009-11-24 Sandisk Corporation Methods for the management of erase operations in non-volatile memories
US7783845B2 (en) 2005-11-14 2010-08-24 Sandisk Corporation Structures for the management of erase operations in non-volatile memories
US8266391B2 (en) 2007-06-19 2012-09-11 SanDisk Technologies, Inc. Method for writing data of an atomic transaction to a memory device
US8775758B2 (en) 2007-12-28 2014-07-08 Sandisk Technologies Inc. Memory device and method for performing a write-abort-safe firmware update

Also Published As

Publication number Publication date
KR100877030B1 (ko) 2009-01-07
CN1535425A (zh) 2004-10-06
US20050036390A1 (en) 2005-02-17
CN1255733C (zh) 2006-05-10
US7240178B2 (en) 2007-07-03
KR20040017276A (ko) 2004-02-26

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