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WO2003012848A1 - Systeme et procede permettant d'effectuer un traitement semi-conducteur sur un substrat en cours de traitement - Google Patents

Systeme et procede permettant d'effectuer un traitement semi-conducteur sur un substrat en cours de traitement Download PDF

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Publication number
WO2003012848A1
WO2003012848A1 PCT/JP2002/002598 JP0202598W WO03012848A1 WO 2003012848 A1 WO2003012848 A1 WO 2003012848A1 JP 0202598 W JP0202598 W JP 0202598W WO 03012848 A1 WO03012848 A1 WO 03012848A1
Authority
WO
WIPO (PCT)
Prior art keywords
processed
substrate
semiconductor processing
section
measuring section
Prior art date
Application number
PCT/JP2002/002598
Other languages
English (en)
French (fr)
Inventor
Koichi Sakamoto
Yamato Tonegawa
Takehiko Fujita
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to US10/484,709 priority Critical patent/US7179334B2/en
Priority to EP02705338A priority patent/EP1429375A4/en
Priority to KR1020047000939A priority patent/KR100778617B1/ko
Publication of WO2003012848A1 publication Critical patent/WO2003012848A1/ja
Priority to US11/626,752 priority patent/US8153451B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/136—Associated with semiconductor wafer handling including wafer orienting means

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
PCT/JP2002/002598 2001-07-26 2002-03-19 Systeme et procede permettant d'effectuer un traitement semi-conducteur sur un substrat en cours de traitement WO2003012848A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US10/484,709 US7179334B2 (en) 2001-07-26 2002-03-19 System and method for performing semiconductor processing on substrate being processed
EP02705338A EP1429375A4 (en) 2001-07-26 2002-03-19 SYSTEM AND METHOD FOR PERFORMING SEMICONDUCTOR PROCESSING ON A JUST PROCESSED SUBSTRATE
KR1020047000939A KR100778617B1 (ko) 2001-07-26 2002-03-19 피처리 기판에 대해 반도체 처리를 실시하기 위한 시스템및 방법
US11/626,752 US8153451B2 (en) 2001-07-26 2007-01-24 System and method for performing semiconductor processing on target substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-225781 2001-07-26
JP2001225781A JP4731755B2 (ja) 2001-07-26 2001-07-26 移載装置の制御方法および熱処理方法並びに熱処理装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10484709 A-371-Of-International 2002-03-19
US11/626,752 Division US8153451B2 (en) 2001-07-26 2007-01-24 System and method for performing semiconductor processing on target substrate

Publications (1)

Publication Number Publication Date
WO2003012848A1 true WO2003012848A1 (fr) 2003-02-13

Family

ID=19058716

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/002598 WO2003012848A1 (fr) 2001-07-26 2002-03-19 Systeme et procede permettant d'effectuer un traitement semi-conducteur sur un substrat en cours de traitement

Country Status (6)

Country Link
US (2) US7179334B2 (ja)
EP (1) EP1429375A4 (ja)
JP (1) JP4731755B2 (ja)
KR (1) KR100778617B1 (ja)
CN (1) CN1260785C (ja)
WO (1) WO2003012848A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160305022A1 (en) * 2015-04-14 2016-10-20 Ebara Corporation Substrate processing apparatus and substrate processing method

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7607357B2 (en) 2006-03-02 2009-10-27 Enepay Corporation Automated test systems configured to evaluate properties of packaging film and related methods
WO2007106297A2 (en) * 2006-03-02 2007-09-20 Enepay Corporation Automated packaging-film testing systems with efficient loading configurations and operation
JP2008144194A (ja) * 2006-12-06 2008-06-26 Fujitsu Ltd 位置調整装置およびスパッタ装置
US8007275B2 (en) * 2008-01-25 2011-08-30 Micron Technology, Inc. Methods and apparatuses for heating semiconductor wafers
US20090197424A1 (en) * 2008-01-31 2009-08-06 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
US8882917B1 (en) * 2009-12-31 2014-11-11 Intermolecular, Inc. Substrate processing including correction for deposition location
JP4961381B2 (ja) * 2008-04-14 2012-06-27 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
FR2948494B1 (fr) * 2009-07-27 2011-09-16 Soitec Silicon On Insulator Procede de determination d'une position centree d'un substrat semi-conducteur dans un four de recuit, dispositif pour traiter thermiquement des substrats semi-conducteurs et procede pour calibrer un tel dispositif
JP5766647B2 (ja) * 2012-03-28 2015-08-19 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
KR101224521B1 (ko) * 2012-06-27 2013-01-22 (주)이노시티 프로세스 챔버 및 기판 처리 방법
KR101215511B1 (ko) * 2012-06-27 2012-12-26 (주)이노시티 프로세스 챔버 및 기판 처리 장치
KR101224520B1 (ko) * 2012-06-27 2013-01-22 (주)이노시티 프로세스 챔버
JP5943201B2 (ja) * 2012-12-26 2016-06-29 信越半導体株式会社 偏芯評価方法及びエピタキシャルウェーハの製造方法
JP6280407B2 (ja) * 2014-03-19 2018-02-14 東京エレクトロン株式会社 基板処理方法、プログラム、制御装置、基板処理装置及び基板処理システム
JP6132163B2 (ja) * 2014-04-10 2017-05-24 信越半導体株式会社 偏芯評価方法及びエピタキシャルウェーハの製造方法
JP6637831B2 (ja) * 2016-04-28 2020-01-29 株式会社ディスコ デバイスの製造方法及び研削装置
CN110184655B (zh) * 2019-04-25 2022-01-11 上海新傲科技股份有限公司 晶圆的表面氧化方法
JP7224254B2 (ja) * 2019-07-17 2023-02-17 東京エレクトロン株式会社 基板処理装置、情報処理装置、及び基板処理方法
CN113644017B (zh) * 2020-04-27 2024-07-09 上海新昇半导体科技有限公司 一种对晶圆进行定位的方法和半导体制造设备
JP2022018205A (ja) * 2020-07-15 2022-01-27 東京エレクトロン株式会社 異常検知方法及び異常検知装置
JP7616004B2 (ja) 2021-10-18 2025-01-17 株式会社Sumco エピタキシャル成長装置の基板載置位置の偏心量を評価する方法及び当該評価方法を用いたエピタキシャルウェーハの製造方法
US20240071838A1 (en) * 2022-08-24 2024-02-29 Applied Materials, Inc. Substrate placement optimization using substrate measurements
US20240069537A1 (en) * 2022-08-24 2024-02-29 Applied Materials, Inc. Substrate placement optimization using substrate measurements

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05275343A (ja) * 1992-03-27 1993-10-22 Toshiba Corp 基板処理装置
JPH1012707A (ja) * 1996-06-24 1998-01-16 Kokusai Electric Co Ltd ボートに於けるウェーハ位置ずれ補正装置
JPH10303278A (ja) * 1997-04-30 1998-11-13 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2001155998A (ja) * 1999-11-25 2001-06-08 Mitsubishi Electric Corp 半導体処理装置および半導体処理方法

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4464451A (en) * 1981-02-06 1984-08-07 Canon Kabushiki Kaisha Electrophotographic image-forming member having aluminum oxide layer on a substrate
US5200021A (en) * 1986-02-15 1993-04-06 Sony Corporation Method and apparatus for vapor deposition
JPS62221128A (ja) * 1986-03-24 1987-09-29 Hitachi Electronics Eng Co Ltd 処理装置
US4770590A (en) * 1986-05-16 1988-09-13 Silicon Valley Group, Inc. Method and apparatus for transferring wafers between cassettes and a boat
US4858556A (en) * 1986-09-15 1989-08-22 Siebert Jerome F Method and apparatus for physical vapor deposition of thin films
US4819167A (en) * 1987-04-20 1989-04-04 Applied Materials, Inc. System and method for detecting the center of an integrated circuit wafer
EP0306967B1 (en) * 1987-09-11 1997-04-16 Hitachi, Ltd. Apparatus for performing heat treatment on semiconductor wafers
US5030057A (en) * 1987-11-06 1991-07-09 Tel Sagami Limited Semiconductor wafer transferring method and apparatus and boat for thermal treatment of a semiconductor wafer
JP2644912B2 (ja) * 1990-08-29 1997-08-25 株式会社日立製作所 真空処理装置及びその運転方法
US5310339A (en) * 1990-09-26 1994-05-10 Tokyo Electron Limited Heat treatment apparatus having a wafer boat
JPH04206943A (ja) * 1990-11-30 1992-07-28 Kyushu Electron Metal Co Ltd サセプターの温度均一化方法
US5277579A (en) * 1991-03-15 1994-01-11 Tokyo Electron Sagami Limited Wafers transferring method in vertical type heat treatment apparatus and the vertical type heat treatment apparatus provided with a wafers transferring system
US5303671A (en) * 1992-02-07 1994-04-19 Tokyo Electron Limited System for continuously washing and film-forming a semiconductor wafer
ATE137543T1 (de) 1992-04-16 1996-05-15 Roland Biegger Kurvenschneidevorrichtung zum schneiden einer textilbahn und verfahren zum steuern derselben
US5383984A (en) * 1992-06-17 1995-01-24 Tokyo Electron Limited Plasma processing apparatus etching tunnel-type
JPH0661158A (ja) * 1992-08-04 1994-03-04 Nippon Steel Corp 縦型炉
JPH06244268A (ja) * 1993-02-16 1994-09-02 Tokyo Electron Tohoku Ltd 移載装置
JP3218488B2 (ja) * 1993-03-16 2001-10-15 東京エレクトロン株式会社 処理装置
US5616264A (en) * 1993-06-15 1997-04-01 Tokyo Electron Limited Method and apparatus for controlling temperature in rapid heat treatment system
JPH0729958A (ja) * 1993-07-14 1995-01-31 Hitachi Ltd 半導体製造装置
US5622639A (en) * 1993-07-29 1997-04-22 Tokyo Electron Kabushiki Kaisha Heat treating apparatus
JPH0745548A (ja) * 1993-07-29 1995-02-14 Kokusai Electric Co Ltd ボート検知方法及び装置
JPH0756611A (ja) * 1993-08-11 1995-03-03 Kokusai Electric Co Ltd ボートセンタ位置検知方法及び装置
US5563798A (en) * 1994-04-05 1996-10-08 Applied Materials, Inc. Wafer positioning system
US5540096A (en) * 1994-06-07 1996-07-30 Washington Suburban Sanitary Commission Method for the non-destructive evaluation of prestressed concrete structures
JP2682476B2 (ja) * 1994-11-22 1997-11-26 日本電気株式会社 真空処理装置
JPH08264516A (ja) * 1995-03-28 1996-10-11 Nippon Precision Circuits Kk 成膜装置
TW319751B (ja) * 1995-05-18 1997-11-11 Toshiba Co Ltd
US5671054A (en) * 1995-07-18 1997-09-23 Nikon Corporation Method and apparatus for measuring position of pattern formed on a substrate having a thickness
KR100244041B1 (ko) * 1995-08-05 2000-02-01 엔도 마코토 기판처리장치
TW344847B (en) * 1996-08-29 1998-11-11 Tokyo Electron Co Ltd Substrate treatment system, substrate transfer system, and substrate transfer method
JPH11124231A (ja) * 1997-10-22 1999-05-11 Nikon Corp 基板搬送装置及び位置決め装置
JPH11150069A (ja) * 1997-11-17 1999-06-02 Sony Corp 成膜方法及びこれに用いる減圧ｃｖｄ装置
KR20010014319A (ko) * 1998-05-01 2001-02-26 히가시 데츠로 막 두께 측정 장치, 기판 처리 방법 및 기판 처리 장치
KR100292030B1 (ko) * 1998-09-15 2001-08-07 윤종용 반도체 박막 공정에서의 박막 두께 제어 방법
JP4232307B2 (ja) * 1999-03-23 2009-03-04 東京エレクトロン株式会社 バッチ式熱処理装置の運用方法
JP4426024B2 (ja) * 1999-09-02 2010-03-03 東京エレクトロン株式会社 熱処理装置の温度校正方法
JP4389305B2 (ja) * 1999-10-06 2009-12-24 東京エレクトロン株式会社 処理装置
EP1139390A1 (en) * 2000-03-28 2001-10-04 Infineon Technologies AG Semiconductor wafer pod
US6495805B2 (en) * 2000-06-30 2002-12-17 Tokyo Electron Limited Method of determining set temperature trajectory for heat treatment system
US6610968B1 (en) * 2000-09-27 2003-08-26 Axcelis Technologies System and method for controlling movement of a workpiece in a thermal processing system
JP4342745B2 (ja) * 2000-09-27 2009-10-14 株式会社日立国際電気 基板処理方法および半導体装置の製造方法
US6666577B2 (en) * 2000-11-02 2003-12-23 Matsushita Electric Industrial Co., Ltd. Method for predicting temperature, test wafer for use in temperature prediction, and method for evaluating lamp heating system
US6436724B1 (en) * 2001-03-14 2002-08-20 Advanced Micro Devices, Inc. Method of monitoring the temperature of a rapid thermal anneal process in semiconductor manufacturing and a test wafer for use in this method
JP2003264214A (ja) * 2002-03-07 2003-09-19 Hitachi High-Technologies Corp 真空処理装置及び真空処理方法
JP2006053170A (ja) 2004-07-14 2006-02-23 Yamaha Corp 電子音楽装置およびその制御方法を実現するためのプログラム
JP4428175B2 (ja) * 2004-09-14 2010-03-10 株式会社Ｓｕｍｃｏ 気相エピタキシャル成長装置および半導体ウェーハの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05275343A (ja) * 1992-03-27 1993-10-22 Toshiba Corp 基板処理装置
JPH1012707A (ja) * 1996-06-24 1998-01-16 Kokusai Electric Co Ltd ボートに於けるウェーハ位置ずれ補正装置
JPH10303278A (ja) * 1997-04-30 1998-11-13 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2001155998A (ja) * 1999-11-25 2001-06-08 Mitsubishi Electric Corp 半導体処理装置および半導体処理方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1429375A4 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160305022A1 (en) * 2015-04-14 2016-10-20 Ebara Corporation Substrate processing apparatus and substrate processing method
US10458020B2 (en) * 2015-04-14 2019-10-29 Ebara Corporation Substrate processing apparatus and substrate processing method
US11180853B2 (en) 2015-04-14 2021-11-23 Ebara Corporation Substrate processing apparatus and substrate processing method

Also Published As

Publication number Publication date
US7179334B2 (en) 2007-02-20
CN1260785C (zh) 2006-06-21
EP1429375A1 (en) 2004-06-16
KR20040030835A (ko) 2004-04-09
KR100778617B1 (ko) 2007-11-22
JP2003037075A (ja) 2003-02-07
US20040159284A1 (en) 2004-08-19
US20070131537A1 (en) 2007-06-14
EP1429375A4 (en) 2007-12-05
JP4731755B2 (ja) 2011-07-27
CN1515028A (zh) 2004-07-21
US8153451B2 (en) 2012-04-10

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