[go: up one dir, main page]

WO2003013031A1 - Emetteur a modulateur pour communications par fibres optiques ultra-rapides - Google Patents

Emetteur a modulateur pour communications par fibres optiques ultra-rapides Download PDF

Info

Publication number
WO2003013031A1
WO2003013031A1 PCT/SE2002/001248 SE0201248W WO03013031A1 WO 2003013031 A1 WO2003013031 A1 WO 2003013031A1 SE 0201248 W SE0201248 W SE 0201248W WO 03013031 A1 WO03013031 A1 WO 03013031A1
Authority
WO
WIPO (PCT)
Prior art keywords
signal
electrical signal
optical signal
modulated optical
amplified
Prior art date
Application number
PCT/SE2002/001248
Other languages
English (en)
Inventor
Urban Westergren
Stefan Irmscher
Robert LEWÉN
Original Assignee
Optillion Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optillion Ab filed Critical Optillion Ab
Publication of WO2003013031A1 publication Critical patent/WO2003013031A1/fr

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/16—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 series; tandem

Definitions

  • the present invention relates generally to conversion of an electrical signal containing certain information into an optical signal containing the same information. More particularly the invention relates to an optoelectronic transmitter according to the preamble of claim 1 and a method of converting an electric signal into an optical signal according to the preamble of claim 1 1 .
  • the optoelectronic transmitter comprises an electronic drive circuit and an optoelectronic device.
  • the electronic drive circuit is typically a semiconductor integrated circuit, i.a. including transistors.
  • the optoelectronic device contains either a semiconductor laser or an optical modulator.
  • the highest rate at which an optoelectronic transmitter can deliver an information signal is limited both by the frequency behavior of the electronic drive circuit and the optoelectronic device. Moreover, the maximum attainable power of the optical signal depends on the speed of the optoelectronic transmitter. In order to produce an optical signal for transmission via, for instance an optical fiber, the drive circuit and the optoelectronic device must together provide a sufficient bandwidth and extinction ratio (ER) between the optical power levels that represent the high state and the low state respectively. Minimum ER-values are normally specified for each commercial standard, such as the SONET- (synchronous optical network) or the Ethernet standard (IEEE-802.3).
  • the transistors in the electronic drive circuit as well as in the optoelectronic device impose limitations on the transmitter's working frequency. These limitations are due to a combination of internal charging and transit times.
  • the transistors in both devices place further limitations on the highest possible ER.
  • the risk of avalanche break- down restricts the maximum voltage that the transistors can handle.
  • the optoelectronic device requires a minimum voltage to provide a sufficient ER.
  • the maximum operation speed of any transistor, bipolar or FET, in any given semiconductor material is determined by the transistor's geo- metrical extensions. Increased speed generally requires smaller sizes, which in turn, reduce the avalanche breakdown voltages for the components.
  • a combined electronic drive circuit and optoelectronic device will be limited with respect to a combination of speed and extinction ratio. It is namely necessary to settle a voltage compromise between the electronic drive circuit and the optoelectronic device.
  • CMOS complementary metal- oxide semiconductor
  • SiGe bipolar transistors SiGe bipolar transistors
  • InGaAs e.g. in single heterojunction bipolar transistors (SHBT)
  • CMOS circuits where the transistors have cutoff frequencies in the order of 100 GHz and typical sizes of less than 0.1 O ⁇ m, are regularly limited to supply voltages below 1 .5V.
  • Silicon bipolar transistors having cutoff frequencies above 100 GHz are expected to have collector-emitter breakdown voltages below 2.0V, and the even faster InP-based SHBTs with cutoff frequencies above 200 GHz have breakdown voltages slightly above 1V.
  • bipolar transistors have been demonstrated with cutoff frequencies of 200-300 GHz and breakdown voltages in the order of 5V.
  • the prior art also includes various alternative approaches to accomplish efficient high-speed fiberoptic communications modulators. For instance, multiple consecutive modulator stages may be employed for generating the optical pulses.
  • the US-patent 5 798 856 discloses an optical pulse generator, which includes two or more cascaded EAMs. At least one modulator in a first set of modulators produces a sequence of short optical pulses. A following modulator may then gate these optical pulses on basis of an information signal, such that an output optical signal represents this information.
  • the document also shows a design example where a laser diode is integrated on the same substrate structure as the modulators. Nevertheless, the proposed designs all demand a comparatively large voltage amplitude to represent the information signal. This, in turn, results in large losses and problems related to power dissipation. Furthermore, the generated optical signal is of the RZ-format, which as mentioned above, utilizes the bandwidth relatively poorly.
  • the object of the present invention is therefore to provide an efficient optoelectronic transmitter solution, which alleviates the problems above and thus offers a substantial improvement of the relationship between the transmitter's bandwidth and extinction ratio.
  • an optoelectronic transmitter as initially described, which is characterized in that it comprises an electrical transmission line for receiving the primary electrical signal.
  • the optoelectronic transmitter also includes at least one second drive circuit for receiving a delayed version of the primary electrical signal via the electrical transmission line. In response to the delayed signal, the at least one second drive circuit produces at least one second amplified electrical signal.
  • a continuous optical waveguide is included in the optoelectronic transmitter. The optical waveguide receives the continuous wave optical signal, the first amplified electrical signal, the at least one second amplified electrical signal and produces in response to these signals, a resulting optical signal, which contains the same information as the electrical signal.
  • the one or more second amplified electrical signals enter the continuous optical waveguide such that they are aligned in phase with the already modulated optical signal therein, which results from the first amplified electrical signal.
  • the continuous optical waveguide includes one modulator section for each of the drive circuits.
  • Each of these modulator sections receives a respective amplified electrical signal. Moreover, they each receive a respective optical signal via the optical waveguide.
  • each modulator section then produces, a particular modulated optical signal. The resulting optical signal represents an aggregation of these modulated optical signals.
  • the electrical transmission line includes a delay element between the first drive circuit and each of the at least one second drive circuit.
  • Each such delay element imposes a particular delay on the electrical signal, which is equivalent to a delay that each of the modulator sections inflict on the modulated optical signal.
  • the electrical signal(s) from the at least one second drive circuit is/are aligned in phase with the first modulated optical signal (as well as with each other).
  • a first end of the electrical transmission line receives the primary electrical signal and a termination resistor in a second end of the transmission line terminates any remaining energy in the primary electrical signal. Undesired standing waves are thereby avoided in the transmission line.
  • the object is achieved by a method of converting an electrical signal into an optical signal, as initially described, which is characterized by the following procedure steps; producing a first delayed electrical signal by delaying the primary electrical signal in proportion to a processing delay in producing the first modulated optical signal, such that an amplified version of the first delayed electrical signal is aligned in phase with the first modulated optical signal, amplifying the first delayed electrical signal into a second amplified electrical signal, modulating the first modulated optical signal with respect to the second amplified electrical signal into a second modulated optical signal, and forming a resulting optical signal by aggregating at least the first modulated optical signal and the second modulated optical signal.
  • the proposed method comprises the further steps of; producing at least one second delayed electrical signal by delaying the primary electrical signal in proportion to a processing delay in producing the second modulated optical signal such that an amplified version of the second delayed electrical signal is aligned in phase with the second modulated optical signal, amplifying the second delayed electrical signal into a third amplified electrical signal, modulating the second modulated optical signal with respect to the third amplified electrical signal into a third modulated optical signal, and forming the resulting optical signal by aggregating the first, the second and the third modulated optical signal.
  • the delaying, amplifying modulating and aggregating steps are repeated with respect to at least one additional cycle and the resulting optical signal also includes at least a fourth modulated optical signal.
  • the proposed multi-section modulator structure offers, for a given extinction ratio, a signal voltage swing being substantially lower than according to any known multi-section modulator structure. This, in turn, guarantees an improved speed and frequency performance irrespective of the modulator type, the transistor technology and semiconductor material. Hence, the transistors of the drive circuits for the modulator can simultaneously have such high upper frequency limit and low breakdown voltage that transistors of any given semiconductor material may be used at high bitrates.
  • optoelectronic transmitter designers are given a larger degree of freedom when choosing the input impedance of the transmitter.
  • This impedance may namely now be chosen to a value being different from the characteristic impedance of the modulator section.
  • the invention allows transmission of electrically time- multiplexed optical output signals having an NRZ-format at bitrates above 100 Gb/s. This is superior to any known alternative design.
  • Figure 1 shows a general block diagram over a known optoelectronic transmitter design
  • Figure 2 shows a circuit diagram over a per se known single- stage optoelectronic transmitter
  • Figure 3a shows a graph representing a voltage pulse being delivered by the drive circuit in the optoelectronic transmitter in figure 2
  • Figure 3b shows a graph that represents a corresponding optical pulse being produced by the optoelectronic transmitter in figure 2
  • FIG. 4 displays a circuit diagram over an optoelectronic transmitter according to one embodiment of the invention
  • Figure 5a shows a graph representing a voltage pulses being delivered by the drive circuits of the optoelectronic transmitter in figure 4,
  • Figure 5b shows a graph that represents corresponding optical pulses being produced by the optoelectronic transmitter in figure 4,
  • Figure 6 illustrates, by means of a flow diagram, a general method according to the invention.
  • FIG. 1 shows a general block diagram over a known optoelectronic transmitter 100, which may include an optoelectronic modulator 120 of arbitrary type.
  • An optical source signal generator 1 10, e.g. a semiconductor laser, in the transmitter 100 produces a basic optical signal B 0 , which itself lacks an information content.
  • the basic optical signal B 0 may have any format being useful for the particular application.
  • the optoelectronic modulator 120 also receives an electrical signal S e representing information. By means of the optoelectronic modulator 120, the electrical signal S e modulates the basic optical signal B 0 , such that an outgoing optical signal S 0 is produced that represents the same information as the electrical signal S e .
  • an optical fiber 121 receives the outgoing optical signal S 0 and forwards the signal to its intended end-receivers.
  • FIG 2 shows a circuit diagram over a per se known single- stage optoelectronic transmitter of TWEAM-type.
  • the basic optical signal B 0 in figure 1 here constitutes a continuous wave optical signal CW 0 , which may have been generated by a semiconductor laser.
  • the continuous wave optical signal CW 0 is fed directly into an optical waveguide 221 that also functions as a modulator section.
  • the optical waveguide 221 has a length L, typically in the order of 250-1000 ⁇ m, and is terminated by a termination resistor 222 in proximity to its output.
  • the optical waveguide 221 receives an amplified electrical signal V from a driver circuit 223.
  • the driver circuit 223 receives a primary electrical signal V and produces in response thereto the amplified electrical signal V having corresponding characteristics. Any voltage variations in the input electrical signal V are thus reflected by equivalent variations in the amplified electrical signal V. Particularly, a voltage pulse of a certain magnitude and duration will cause an equivalent pulse in the amplified electrical signal V, for instance having a voltage swing of a magnitude ⁇ , being initiated at a first point in time ti and ended at a second and somewhat later point in time.
  • Figure 3a displays a graphical representation of such pulse.
  • ER is expressed in dB.
  • the invention combines existing technologies for optimizing the frequency behavior of the electronic drive circuit and the optoelectronic device with existing technologies for increasing the attainable power of the optical signal to accomplish a very high transmission rate for the optoelectronic transmitter.
  • Figure 4 displays a circuit diagram over an optoelectronic transmitter according to one embodiment of the invention.
  • modulators of TWEAM-type the invention is equally well applicable to other types of modulators.
  • lumped electroabsorption modulators (EAM) and Mach-Zender modulators may instead be cascaded according to the proposed principle.
  • the former type of modulators have most characteristics in common with TWEAMs, however, their bandwidth is slightly narrower.
  • the latter type of modulators are several factors larger in size and generally require higher drive voltages.
  • the overall working principles nevertheless correspond to that of TWEAMs.
  • H. Chung et al describe key features of this type of modulators.
  • the invention may be used to improve the performance of any future technologies for developing the frequency behavior of the electronic drive circuit and the optoelectronic device and/or increasing the attainable optical power.
  • the optoelectronic transmitter in figure 4 includes an optical source signal generator 410, a continuous optical waveguide 421 , an electrical transmission line 424 and a set of drive circuits 423a - 423c.
  • the optical source signal generator 410 delivers a continuous wave optical signal CW 0 to the optical waveguide 421 .
  • a primary electrical signal S e that represents information is fed into a first end of the electrical transmission line 424.
  • a first drive circuit 423a also receives the primary electrical signal S e .
  • the primary electrical signal S e may have arbitrary format and thus carry the information according to any type of represen- tation. For example, a voltage below a first level may represent a low state corresponding to a binary "0" and a voltage above a second level may represent a high state corresponding to a binary "1 ". (The first and second levels may, of course, coincide). Hence, a binary sequence "010" can be symbolized by means of a voltage pulse S e , which initially is low, then increases to a high state and again returns to the low state.
  • Figure 5a shows a graph of such voltage pulse S' e after amplification in the first drive circuit 423a.
  • This first amplified electrical signal i.e. the voltage pulse S' e , has a voltage swing between a low state and a high state of a magnitude ⁇ v /3.
  • the first amplified electrical signal S' e is input to the optical fiber 421 , where the light and electrical fields interact as described with reference to the figure 2 above and a first modulated optical signal s' 0 is produced in the waveguide 421 .
  • the continuous wave optical signal CW 0 and the first amplified electrical signal S' e are presumed to interact over a length L of the waveguide 421 .
  • a first termination resistor 422a is attached.
  • the first modulated optical signal s' 0 will be slightly delayed relative the primary electrical signal S e to an extent ⁇ that depends on the length L.
  • a first delay element 424a in the electrical transmission line 424 delays the primary electrical signal S e to such degree that a first delayed signal S e d1 , after having passed through a second drive circuit 423b, becomes aligned in phase with the first modulated optical signal s' 0 .
  • the first delay element 424a typically corresponds to a certain length of the electrical transmission line 424.
  • the second drive circuit 423b receives the first delayed signal S e d1 and produces in response thereto a second amplified electrical signal S" e , which is fed to the continuous optical waveguide 421.
  • the second amplified electrical signal S" e enters the waveguide 421 such that it is aligned in phase with the first modulated optical signal s' 0 .
  • a second termination resistor 422b is attached to the optical wave guide 421 at the end of the section.
  • the light field of an aggregation of the continuous wave optical signal CW 0 and the first modulated optical signal s' 0 interact with the electrical field of the second amplified electrical signal S" e .
  • a second modulated optical signal s" 0 is produced in the waveguide 421 .
  • a second delay element 424b in the electrical transmission line 424 delays the primary electrical signal S e further and to such degree that a second delayed signal S e d2 , after having passed through a third drive circuit 423c, becomes aligned in phase with the second modulated optical signal s" 0 .
  • the third drive circuit 423c receives the second delayed signal S e d2 and produces in response thereto a third amplified electrical signal S'" e , which is fed to the continuous optical waveguide 421 .
  • the third amplified electrical signal S'" e enters the waveguide 421 such that it is aligned in phase with the second modulated optical signal s" 0 (as well as the first modulated optical signal s' o ). Again, an aggregated light field of the continuous wave optical signal CW 0 , the first modulated optical signal s' 0 and the second modulated optical signal s" 0 interact with the electrical field of the third amplified electrical signal S'" e and a third modulated optical signal s'" 0 is generated in the waveguide 421 . In analogy with the first and second modulator sections, a third termination resistor 422c is also attached to the optical wave guide 421 at the end of the third section.
  • a termination resistor 425 connected to the opposite end 424c of the electrical transmission line 424 from where the primary electrical signal S e is fed in, terminates any remaining energy S e d3 in the primary electrical signal S e . Undesired standing waves are thereby avoided in the transmission line 424.
  • the above-described delaying, amplifying modulating and aggregating steps may be repeated an arbitrary number of times.
  • three or four modulator sections may be assumed to be most efficient, at least with respect to bipolar- transistor based driver circuits.
  • the modulator structure exemplified here only includes three modulator sections, and thus, a resulting optical signal S 0 being fed out from the optoelectronic transmitter is an aggregation of the first s' 0 , the second s" 0 and the third s'" 0 modulated optical signals.
  • any length interrelationship between the modulator sections 421 a, 421 b and 421 c is conceivable.
  • an equal length L of the respective sections 421 a - 421 c is optimal. In fact, this assumption has been made in this example, such that the total active length of the continuous optical waveguide 421 becomes 3L.
  • each modulator section 421 a - 421 c need only receive an input pulse that has a voltage swing between its low and high state of a magnitude ⁇ v /3.
  • the figure 5a shows the first amplified electrical signal S' e pulse as an unbroken line, the second amplified electrical signal S" e as a dotted line and the third amplified electrical signal S'" e as a dashed line.
  • the pulses are shifted somewhat in time due to the delays caused by the delay elements 424a and 424b respectively.
  • the figure 5b shows corresponding optical pulses being produced by the modulator sections 421 a - 421 c and that propagate through the waveguide 421 . Due to the delays in the modulator sections 421 a - 421 c, also these pulses are shifted in time.
  • An unbroken line here represents the first modulated optical signal s' 0 , which has an ER of approximately (P ⁇ - Po)/3 (in dBs).
  • a dotted line represents a sum of the first modulated optical signal s' 0 and the second modulated optical signal s' 0 , which has an ER of approximately 2(P ⁇ - Po)/3 (in dBs), and finally a dashed line represents the resulting optical signal S 0 (i.e. a sum of the first s' 0 , the second s" 0 and the third s'" 0 modulated optical signals), which has an ER of P ⁇ - P 0 (in dBs).
  • each drive circuit of an analo- gous multi-section modulator can have a relatively low signal voltage swing to the respective modulator sections, typically half or less, depending on the number of modulator sections.
  • the overall ER still becomes sufficiently high, since the resulting optical signal S 0 is an aggregation of the individual optical signals s' 0 , s" 0 and s'" 0 being output from all the modulator sections.
  • the proposed optoelectronic transmitter is realized by means of two separate chips being hybrid mounted and electrically interconnected such that any parasitic influences are minimized.
  • a first integrated semiconductor chip may contain the electrical transmission line and the drive circuits while a second integrated semiconductor chip may contain the optical source signal generator and the continuous optical waveguide.
  • a chip of the latter kind can, in the TWEAM-case, be based directly on a single-section TWEAM design with integrated termination resistors.
  • the metal electrode on top of the mesa should be discontinued for a short distance (in the order of 10 ⁇ m) to provide a resistance between adjacent modulator sections, which is substantially larger than the termination resistance for each section. Thereby the risk of any backward waves propagating along the modulator is avoided. Nevertheless, the epitaxial layer may continue along the entire length of the TWEAM modulator structure.
  • the processing of a multi-section TWEAM-chip thus becomes identical to that of a single-section TWEAM-chip. It is advantageous if the signal and ground pads of the two chips are mounted edge to edge with a minimum distance, such that the bonding parasitics are reduced.
  • units are integrated onto a single semiconductor chip.
  • the bitrates have been chosen to 10 Gb/s, 25 Gb/s, 40 Gb/s, 50 Gb/s, 100 Gb/s and 160 Gb/s respectively.
  • the indicated bandwidth relates to one modulator section of the length 1 .0 mm, 0.6 mm, 0.4 mm, 0.3 mm, 0.15 mm and 0.08 mm respectively.
  • the bandwidths are chosen to comply with (some margin) to the corresponding bit- rate.
  • the indicated voltages represent a single-ended swing across one drive circuit output.
  • the values for the single-section modulators have actually been measured with respect to the lengths 0.25 mm, 0.45 mm and 0.95 mm, whereas the values for the lengths 0.08 mm and 0.15 mm have been derived by means of extrapolation.
  • Two parallel steps 601 and 602 receive a primary electrical signal S e and a continuous wave optical signal CW 0 respectively.
  • a step 603 following the step 601 amplifies the primary electrical signal S e into a first amplified signal S' e .
  • a step 604 modulates the continuous wave optical signal CW 0 received in the step 602 with the first amplified signal S' e and thereby produces a first modulated optical signal s' 0 .
  • a subsequent step 605 produces a first delayed electrical signal S e d1 by delaying the primary electrical signal S e , such that an amplified version of the first delayed electrical signal S e d1 is aligned in phase with the first modulated optical signal s' 0 .
  • a step 606 effectuates the amplification of the first delayed electrical signal S e d1 into a second amplified signal S" e .
  • a subsequent step 608 "checks" whether further modulation stages should be applied, and if so, returns the procedure directly to the steps 601 and 602. Otherwise, the procedure continues to a step 609 where the first modulated optical signal s' o and the second modulated optical signal s" 0 are aggregated into a resulting optical signal S 0 to be fed out. If the procedure loops through the steps 601 - 607 one or more additional times, at least a third modulated optical signal s'" 0 is also included in the resulting optical signal S 0 . As mentioned earlier, an arbitrary number n of such loops may be performed according to the invention.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Communication System (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

La présente invention concerne un émetteur opto-électronique pour transformer un signal d'information électrique (Se) en un signal optique (So) qui représente les mêmes informations. L'émetteur opto-électronique comprend un modulateur opto-électronique à multiples sections. Les champs lumineux et électrique agissent ainsi sur de multiples sections de modulateurs (421a -421c) d'un guide d'ondes continu (421). Un circuit d'entraînement particulier (423a-423c) fournit un signal électrique amplifié et à alignement de phase (S'e, S''e ; S'''e) à chaque section de modulateur (421a-421c). Pour un rapport d'extinction donné du signal optique modulé (So), il est possible d'utiliser un écart de tension qui est sensiblement inférieur à celui de toute structure de modulateur à simple ou multiples sections connu. Ainsi, l'émetteur opto-électronique proposé est approprié pour envoyer des données à des taux binaires ultra-rapides.
PCT/SE2002/001248 2001-08-01 2002-06-25 Emetteur a modulateur pour communications par fibres optiques ultra-rapides WO2003013031A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0102646-7 2001-08-01
SE0102646A SE523350C2 (sv) 2001-08-01 2001-08-01 Modulatorsändare för fiberoptisk kommunikation vid höga hastigheter

Publications (1)

Publication Number Publication Date
WO2003013031A1 true WO2003013031A1 (fr) 2003-02-13

Family

ID=20284970

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SE2002/001248 WO2003013031A1 (fr) 2001-08-01 2002-06-25 Emetteur a modulateur pour communications par fibres optiques ultra-rapides

Country Status (2)

Country Link
SE (1) SE523350C2 (fr)
WO (1) WO2003013031A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1484631A1 (fr) * 2003-06-03 2004-12-08 Alcatel Dispositif optoélectronique intégré comportant un modulateur à électroabsorption et un élément électronique de commande du modulateur
WO2005017609A2 (fr) 2003-08-15 2005-02-24 Luxtera, Inc. Modulateurs optiques a amplificateurs repartis
EP2487524A4 (fr) * 2009-10-09 2014-07-09 Nec Corp Module de modulation optique et procédé de modulation d'un signal optique

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5706116A (en) * 1995-12-26 1998-01-06 Fujitsu Limited Drive circuit optical modulator and optical transmitter
US5798856A (en) * 1992-02-03 1998-08-25 Kokusai Denshin Denwa Kabushiki Kaisha Optical pulse generator
EP0911997A2 (fr) * 1997-10-20 1999-04-28 Fujitsu Limited Circuit de commande d'un modulateur à électro-absorption et émetteur optique l'utilisant
EP1016891A1 (fr) * 1998-12-24 2000-07-05 Anritsu Corporation Générateur d'impulsions optiques pour générer des impulsions optiques à rapport cyclique élevé
WO2000073847A2 (fr) * 1999-05-27 2000-12-07 Siemens Aktiengesellschaft Procede et dispositif pour generer des signaux rz
EP1130708A1 (fr) * 2000-03-02 2001-09-05 OpNext Japan, Inc. Emetteur de lumiere à semiconducteur intégrant un modulateur electro-absorbant, module et système de transmission optique comprenant cet émetteur

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798856A (en) * 1992-02-03 1998-08-25 Kokusai Denshin Denwa Kabushiki Kaisha Optical pulse generator
US5706116A (en) * 1995-12-26 1998-01-06 Fujitsu Limited Drive circuit optical modulator and optical transmitter
EP0911997A2 (fr) * 1997-10-20 1999-04-28 Fujitsu Limited Circuit de commande d'un modulateur à électro-absorption et émetteur optique l'utilisant
EP1016891A1 (fr) * 1998-12-24 2000-07-05 Anritsu Corporation Générateur d'impulsions optiques pour générer des impulsions optiques à rapport cyclique élevé
WO2000073847A2 (fr) * 1999-05-27 2000-12-07 Siemens Aktiengesellschaft Procede et dispositif pour generer des signaux rz
EP1130708A1 (fr) * 2000-03-02 2001-09-05 OpNext Japan, Inc. Emetteur de lumiere à semiconducteur intégrant un modulateur electro-absorbant, module et système de transmission optique comprenant cet émetteur

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1484631A1 (fr) * 2003-06-03 2004-12-08 Alcatel Dispositif optoélectronique intégré comportant un modulateur à électroabsorption et un élément électronique de commande du modulateur
FR2855883A1 (fr) * 2003-06-03 2004-12-10 Cit Alcatel Dispositif optoelectronique integre comportant un modulateur a electroabsorption et un element electronique de commande du modulateur
WO2005017609A2 (fr) 2003-08-15 2005-02-24 Luxtera, Inc. Modulateurs optiques a amplificateurs repartis
EP1660923A4 (fr) * 2003-08-15 2010-10-06 Luxtera Inc Modulateurs optiques a amplificateurs repartis
EP2487524A4 (fr) * 2009-10-09 2014-07-09 Nec Corp Module de modulation optique et procédé de modulation d'un signal optique
JP5729303B2 (ja) * 2009-10-09 2015-06-03 日本電気株式会社 光変調器モジュール及び光信号の変調方法

Also Published As

Publication number Publication date
SE0102646L (sv) 2003-02-02
SE523350C2 (sv) 2004-04-13
SE0102646D0 (sv) 2001-08-01

Similar Documents

Publication Publication Date Title
US7010179B2 (en) Differential drive semiconductor optical modulator
Webster et al. Low-power MOS-capacitor based silicon photonic modulators and CMOS drivers
US7099596B2 (en) Optical transmitter
JP2001209017A (ja) 光電変換半導体装置
US6590691B1 (en) Hybridly integrated optical modulation devices
JP2020043251A (ja) 半導体装置
US6826208B1 (en) Nonlinear transmission line integrated circuit
US8179593B2 (en) Optical-switch drive circuit and method thereof
US11126017B2 (en) Driving circuit for optical device
US20210124232A1 (en) Optical Modulator
US6711360B1 (en) Duty-cycle adjustable clock generator with low reverse bias and zero DC level
WO2003013031A1 (fr) Emetteur a modulateur pour communications par fibres optiques ultra-rapides
Meghelli et al. High power and high speed InP DHBT driver IC's for laser modulation
CN108923248B (zh) 一种下沉式直接调制激光器与驱动器的结构及其应用
US6990256B2 (en) Segmented modulator for high-speed opto-electronics
Tarusawa et al. A new constant-resistance ASK modulator using double-sided MIC
CN116107102B (zh) 一种低功耗差分调制器及光芯片
JP2017015795A (ja) 光変調器
US20240142810A1 (en) Electro-optical modulator, optical modulation system, and integrated optical chip
SANO et al. Present status and future prospects of high-speed lightwave ICs based on InP
Takeyari et al. Fully monolithically integrated 40-Gbit/s transmitter and receiver
JP3979108B2 (ja) 光信号処理装置
Baeyens et al. Compact high-gain lumped differential 40 Gb/s driver amplifiers in production 0.15/spl mu/m PHEMT technology
Fatemi A highly efficient 40-Gbps modulator driver circuit for Silicon photonic optical communication
Westergren et al. Compact and efficient modulators forá100áGb/s ETDM forátelecom and interconnect applications

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BY BZ CA CH CN CO CR CU CZ DE DM DZ EC EE ES FI GB GD GE GH HR HU ID IL IN IS JP KE KG KP KR LC LK LR LS LT LU LV MA MD MG MN MW MX MZ NO NZ OM PH PL PT RU SD SE SG SI SK SL TJ TM TN TR TZ UA UG US UZ VN YU ZA ZM

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ UG ZM ZW AM AZ BY KG KZ RU TJ TM AT BE CH CY DE DK FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP