WO2003017002A1 - Composition permettant la formation d'un film anti-reflechissant destine a etre utilise en lithographie - Google Patents
Composition permettant la formation d'un film anti-reflechissant destine a etre utilise en lithographie Download PDFInfo
- Publication number
- WO2003017002A1 WO2003017002A1 PCT/JP2002/008244 JP0208244W WO03017002A1 WO 2003017002 A1 WO2003017002 A1 WO 2003017002A1 JP 0208244 W JP0208244 W JP 0208244W WO 03017002 A1 WO03017002 A1 WO 03017002A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- antireflective film
- composition
- lactone structure
- lithography
- lithographic process
- Prior art date
Links
- 230000003667 anti-reflective effect Effects 0.000 title abstract 4
- 238000001459 lithography Methods 0.000 title 1
- 238000000034 method Methods 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 125000000422 delta-lactone group Chemical group 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 125000000686 lactone group Chemical group 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/486,891 US7326509B2 (en) | 2001-08-20 | 2002-08-13 | Composition for forming anti-reflective coating for use in lithography |
| EP02760616A EP1426822B1 (en) | 2001-08-20 | 2002-08-13 | Composition for forming antireflective film for use in lithography |
| JP2003521447A JP3985165B2 (ja) | 2001-08-20 | 2002-08-13 | リソグラフィー用反射防止膜形成組成物 |
| DE60231886T DE60231886D1 (de) | 2001-08-20 | 2002-08-13 | Zusammensetzung zur bildung eines antireflexfilms zur verwendung bei der lithographie |
| KR1020047002371A KR100945435B1 (ko) | 2001-08-20 | 2002-08-13 | 리소그래피용 반사방지막 형성 조성물 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001248878 | 2001-08-20 | ||
| JP2001-248878 | 2001-08-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2003017002A1 true WO2003017002A1 (fr) | 2003-02-27 |
Family
ID=19077964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2002/008244 WO2003017002A1 (fr) | 2001-08-20 | 2002-08-13 | Composition permettant la formation d'un film anti-reflechissant destine a etre utilise en lithographie |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7326509B2 (ja) |
| EP (1) | EP1426822B1 (ja) |
| JP (1) | JP3985165B2 (ja) |
| KR (1) | KR100945435B1 (ja) |
| CN (1) | CN100362430C (ja) |
| DE (1) | DE60231886D1 (ja) |
| TW (1) | TW574630B (ja) |
| WO (1) | WO2003017002A1 (ja) |
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| WO2008047715A1 (fr) | 2006-10-12 | 2008-04-24 | Nissan Chemical Industries, Ltd. | procédé de fabrication d'un dispositif semi-conducteur à l'aide d'un stratifié à quatre couches |
| WO2008047638A1 (fr) * | 2006-10-12 | 2008-04-24 | Nissan Chemical Industries, Ltd. | Procédé de fabrication d'un dispositif semi-conducteur à l'aide d'un film sous-résist durci par photoréticulation |
| WO2009008446A1 (ja) * | 2007-07-11 | 2009-01-15 | Nissan Chemical Industries, Ltd. | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
| WO2009104685A1 (ja) | 2008-02-21 | 2009-08-27 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
| US7585612B2 (en) * | 2005-07-05 | 2009-09-08 | Rohm And Haas Electronic Materials Llc | Coating compositions for use with an overcoated photoresist |
| JP2011252074A (ja) * | 2010-06-02 | 2011-12-15 | Mitsubishi Rayon Co Ltd | 半導体フォトリソグラフィ用重合体の精製方法 |
| US8383320B2 (en) | 2007-10-31 | 2013-02-26 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition and method of forming resist pattern using the same |
| WO2014123107A1 (ja) * | 2013-02-08 | 2014-08-14 | 三菱瓦斯化学株式会社 | 化合物、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜及びパターン形成方法 |
| JP2014159585A (ja) * | 2014-04-08 | 2014-09-04 | Mitsubishi Rayon Co Ltd | 半導体フォトリソグラフィ用重合体の精製方法 |
| JP2014185318A (ja) * | 2013-02-20 | 2014-10-02 | Tokyo Ohka Kogyo Co Ltd | 下地剤及びパターン形成方法 |
| KR20150013679A (ko) | 2012-05-07 | 2015-02-05 | 닛산 가가쿠 고교 가부시키 가이샤 | 레지스트 하층막 형성조성물 |
| US9165782B2 (en) | 2011-10-20 | 2015-10-20 | Nissan Chemical Industries, Ltd. | Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same |
| US9195137B2 (en) | 2012-03-08 | 2015-11-24 | Nissan Chemical Industries, Ltd. | Composition for forming highly adhesive resist underlayer film |
| KR20160034289A (ko) | 2013-07-23 | 2016-03-29 | 닛산 가가쿠 고교 가부시키 가이샤 | 레지스트 하층막 형성 조성물용 첨가제 및 이것을 포함하는 레지스트 하층막 형성 조성물 |
| KR20160099554A (ko) | 2013-12-19 | 2016-08-22 | 닛산 가가쿠 고교 가부시키 가이샤 | 락톤구조함유 폴리머를 포함하는 전자선 레지스트 하층막 형성 조성물 |
| KR20160138397A (ko) | 2014-03-26 | 2016-12-05 | 닛산 가가쿠 고교 가부시키 가이샤 | 첨가제 및 이 첨가제를 포함하는 레지스트 하층막 형성 조성물 |
| US9828355B2 (en) | 2013-02-08 | 2017-11-28 | Mitsubishi Gas Chemical Company, Inc. | Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern forming method |
| US20170349564A1 (en) | 2014-12-25 | 2017-12-07 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method |
| KR20180083852A (ko) | 2015-11-17 | 2018-07-23 | 닛산 가가쿠 고교 가부시키 가이샤 | 레지스트 하층막 형성 조성물용 첨가제 및 이 첨가제를 포함하는 레지스트 하층막 형성 조성물 |
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| US10377734B2 (en) | 2013-02-08 | 2019-08-13 | Mitsubishi Gas Chemical Company, Inc. | Resist composition, method for forming resist pattern, polyphenol derivative for use in the composition |
| KR20190113745A (ko) | 2017-02-03 | 2019-10-08 | 닛산 가가쿠 가부시키가이샤 | 우레아결합을 갖는 구조단위를 갖는 폴리머를 포함하는 레지스트 하층막 형성 조성물 |
| US11131928B2 (en) | 2016-03-30 | 2021-09-28 | Nissan Chemical Corporation | Resist underlayer film forming composition which contains compound having glycoluril skeleton as additive |
| US11137686B2 (en) | 2015-08-31 | 2021-10-05 | Mitsubishi Gas Chemical Company, Inc. | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method |
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| US11243467B2 (en) | 2015-09-10 | 2022-02-08 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method |
| US11256170B2 (en) | 2015-03-31 | 2022-02-22 | Mitsubishi Gas Chemical Company, Inc. | Compound, resist composition, and method for forming resist pattern using it |
| US11480877B2 (en) | 2015-03-31 | 2022-10-25 | Mitsubishi Gas Chemical Company, Inc. | Resist composition, method for forming resist pattern, and polyphenol compound used therein |
| EP4116770A1 (en) | 2021-07-06 | 2023-01-11 | Shin-Etsu Chemical Co., Ltd. | Material for forming adhesive film, method for forming adhesive film using the same, and patterning process using material for forming adhesive film |
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| EP4202548A1 (en) | 2021-12-23 | 2023-06-28 | Shin-Etsu Chemical Co., Ltd. | Material for forming adhesive film, patterning process, and method for forming adhesive film |
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| KR101042667B1 (ko) * | 2004-07-05 | 2011-06-20 | 주식회사 동진쎄미켐 | 포토레지스트 조성물 |
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| JP7285209B2 (ja) | 2019-12-26 | 2023-06-01 | 信越化学工業株式会社 | 下層膜形成材料、下層膜の形成方法、及びパターン形成方法 |
| JP7316237B2 (ja) | 2020-03-02 | 2023-07-27 | 信越化学工業株式会社 | 有機膜形成材料、有機膜形成方法、パターン形成方法及び化合物 |
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| EP0698823A1 (en) * | 1994-07-27 | 1996-02-28 | International Business Machines Corporation | Antireflective coating for microlithography |
| JPH1172925A (ja) * | 1997-07-03 | 1999-03-16 | Toshiba Corp | 下層膜用組成物およびこれを用いたパターン形成方法 |
| JP2000026446A (ja) * | 1998-07-03 | 2000-01-25 | Nec Corp | ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法 |
| JP2000100705A (ja) * | 1998-09-25 | 2000-04-07 | Hitachi Ltd | パターン形成方法及び半導体装置の製造方法及び感放射線組成物 |
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- 2002-08-13 CN CNB028162994A patent/CN100362430C/zh not_active Expired - Lifetime
- 2002-08-13 KR KR1020047002371A patent/KR100945435B1/ko not_active Expired - Lifetime
- 2002-08-13 WO PCT/JP2002/008244 patent/WO2003017002A1/ja active Application Filing
- 2002-08-13 DE DE60231886T patent/DE60231886D1/de not_active Expired - Lifetime
- 2002-08-13 US US10/486,891 patent/US7326509B2/en not_active Expired - Lifetime
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Cited By (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7585612B2 (en) * | 2005-07-05 | 2009-09-08 | Rohm And Haas Electronic Materials Llc | Coating compositions for use with an overcoated photoresist |
| US8227172B2 (en) | 2006-10-12 | 2012-07-24 | Nissan Chemical Industries, Ltd. | Method of producing semiconductor device using resist underlayer film by photo-crosslinking curing |
| WO2008047638A1 (fr) * | 2006-10-12 | 2008-04-24 | Nissan Chemical Industries, Ltd. | Procédé de fabrication d'un dispositif semi-conducteur à l'aide d'un film sous-résist durci par photoréticulation |
| WO2008047715A1 (fr) | 2006-10-12 | 2008-04-24 | Nissan Chemical Industries, Ltd. | procédé de fabrication d'un dispositif semi-conducteur à l'aide d'un stratifié à quatre couches |
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Also Published As
| Publication number | Publication date |
|---|---|
| US7326509B2 (en) | 2008-02-05 |
| EP1426822A4 (en) | 2007-05-09 |
| CN100362430C (zh) | 2008-01-16 |
| EP1426822A1 (en) | 2004-06-09 |
| DE60231886D1 (de) | 2009-05-20 |
| KR20040037282A (ko) | 2004-05-06 |
| KR100945435B1 (ko) | 2010-03-05 |
| US20040197709A1 (en) | 2004-10-07 |
| EP1426822B1 (en) | 2009-04-08 |
| JP3985165B2 (ja) | 2007-10-03 |
| JPWO2003017002A1 (ja) | 2004-12-09 |
| CN1545645A (zh) | 2004-11-10 |
| TW574630B (en) | 2004-02-01 |
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