WO2003017299A1 - Procede de production d'un condensateur electrolytique solide - Google Patents
Procede de production d'un condensateur electrolytique solide Download PDFInfo
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- WO2003017299A1 WO2003017299A1 PCT/JP2002/008231 JP0208231W WO03017299A1 WO 2003017299 A1 WO2003017299 A1 WO 2003017299A1 JP 0208231 W JP0208231 W JP 0208231W WO 03017299 A1 WO03017299 A1 WO 03017299A1
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- Prior art keywords
- conductive polymer
- polymer layer
- layer
- forming
- dielectric film
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- 239000003990 capacitor Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000007787 solid Substances 0.000 title claims abstract description 14
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 89
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 30
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229920000128 polypyrrole Polymers 0.000 claims abstract description 24
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000178 monomer Substances 0.000 claims abstract description 13
- 239000002904 solvent Substances 0.000 claims abstract description 5
- 150000003233 pyrroles Chemical class 0.000 claims abstract description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 38
- 229910052758 niobium Inorganic materials 0.000 claims description 32
- 239000010955 niobium Substances 0.000 claims description 32
- 239000000126 substance Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000003115 supporting electrolyte Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000007743 anodising Methods 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims 3
- GSSXLFACIJSBOM-UHFFFAOYSA-N 2h-pyran-2-ol Chemical class OC1OC=CC=C1 GSSXLFACIJSBOM-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 230000008014 freezing Effects 0.000 claims 1
- 238000007710 freezing Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 120
- 239000011247 coating layer Substances 0.000 abstract description 4
- 239000003792 electrolyte Substances 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 37
- 238000006116 polymerization reaction Methods 0.000 description 22
- 239000007800 oxidant agent Substances 0.000 description 20
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 15
- 230000032683 aging Effects 0.000 description 14
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 229910052715 tantalum Inorganic materials 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 9
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 6
- 229920000123 polythiophene Polymers 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920000767 polyaniline Polymers 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 230000003679 aging effect Effects 0.000 description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 239000010405 anode material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- -1 polypropylene Polymers 0.000 description 3
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- WZTQWXKHLAJTRC-UHFFFAOYSA-N benzyl 2-amino-6,7-dihydro-4h-[1,3]thiazolo[5,4-c]pyridine-5-carboxylate Chemical compound C1C=2SC(N)=NC=2CCN1C(=O)OCC1=CC=CC=C1 WZTQWXKHLAJTRC-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 description 1
- 239000001741 Ammonium adipate Substances 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 235000019293 ammonium adipate Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- XWPWZOJBTOJEGW-UHFFFAOYSA-L disodium;benzene-1,3-disulfonate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)C1=CC=CC(S([O-])(=O)=O)=C1 XWPWZOJBTOJEGW-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- SIRNMKUJKQQKAV-UHFFFAOYSA-N sodium;benzene-1,3-disulfonic acid Chemical compound [Na+].OS(=O)(=O)C1=CC=CC(S(O)(=O)=O)=C1 SIRNMKUJKQQKAV-UHFFFAOYSA-N 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-M toluene-4-sulfonate Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-M 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
- H01G9/028—Organic semiconducting electrolytes, e.g. TCNQ
Definitions
- the present invention relates to a solid electrolytic capacitor using niobium or an alloy mainly containing niobium as an anode material, and using a conductive polymer as a cathode material.
- anode body of the electrolytic capacitor As the anode body of the electrolytic capacitor, a rolled body of a roughened aluminum foil, a single-layer or multilayer body of a roughened aluminum thin plate, a porous sintered body of evening powder, and the like are often used.
- niobium As a material for the anode body, niobium has also attracted attention.
- Niobium belongs to the same group 5A as tantalum in the periodic table of elements, and is a metal whose physical properties are similar to tantalum.It has a lower specific gravity, more crustal reserves, and a lower unit cost per kilogram than evening tar. Because of its many advantages, attempts have been made to use it as the anode material of electrolytic capacitors.However, in electrolytic capacitors using niobium as the anode material, the leakage current tends to be large, In order to reduce the aging process (the operation of insulating the defective portion of the dielectric film by applying a DC voltage for a long time according to the polarity of the capacitor), it is difficult to achieve the desired effect. There are many problems that cannot be solved by simply diverting the technology in the case of using an anode body, such as the fact that it fluctuates due to the DC bias voltage. To the knowledge of the originating inventor, it has not yet led to commercially practical use.
- solid electrolytes such as conductive oxides such as manganese dioxide and organic semiconductors such as TCNQ complex salts have been widely used in place of conventional electrolytes as cathode materials for electrolytic capacitors.
- conductive polymers such as polypyrrol and polythiophene have been put into practical use, but all of them are limited to those using aluminum or tantalum as the anode material.
- As a means for forming the conductive polymer layer as the cathode material to a certain thickness there are a method of repeating the polymerization process several times, and a method of forming an electrolytic solution on the thin conductive polymer layer formed by the chemical polymerization method.
- a method of forming a relatively thick conductive polymer layer by a polymerization method see Japanese Patent Publication No. Hei 4-174853 is known.
- chemical polymerization refers to oxidative polymerization of a polymerizable monomer by the action of an oxidizing agent without using a current-carrying means.
- electrochemical polymerization refers to polymerization of a polymerizable monomer by using a current-carrying means. Oxidative polymerization is meant.
- the method of forming a conductive polymer layer in the above (1) has advantages and disadvantages depending on the combination of the material and configuration of the anode body, and the like.However, it is easy to form a dense conductive polymer layer, and it is easy to control the polymerization reaction. Considering the fact that the pot life of the polymerization solution is long, the above-mentioned method (method using both chemical polymerization and electrolytic polymerization) has more advantages. In recent years, the technology related to niobium powder for capacitors has been dramatically improved recently.
- the CV product (the product of the capacitance C per unit mass obtained by forming the dielectric film and the formation (anodizing) voltage V for forming the dielectric film) is improved, At this point, the difference from tantalum powder has almost disappeared, and the purity of niobium powder has also improved remarkably, for example, the concentration of adsorbed oxygen has been reduced from tens of thousands of ppm to thousands of ppm.
- a niobium sintered body is used.
- a dielectric film layer and a conductive polymer cathode layer are formed on the surface of an anode element, even if each layer is formed under the same conditions as when a tantalum sintered element is used, the leakage current becomes very large, In many cases, the aging process cannot be performed due to a short circuit.
- the appearance rate of capacitance (capacity measured after forming a conductive polymer layer and conductive The ratio to the capacitance measured in a conductive aqueous solution before forming the polymer layer) is low. That is, it is very difficult to form a conductive polymer layer even in the center of the niobium sintered body, unlike the case of the tantalum sintered body.
- the capacity appearance rate when using a tantalum sintered body, it is relatively easy to reach up to about 85%, regardless of whether one conductive polymer layer is formed by the chemical polymerization method or the electrolytic polymerization method. On the other hand, when a niobium sintered body is used, it is not easy to exceed the wall of 20 to 30%.
- An object of the present invention is to provide a niobium anode Z conductive polymer cathode capacitor having a high capacitance appearance rate and capable of sufficiently reducing leakage current by aging treatment. Disclosure of the invention
- a dielectric film layer, a first conductive polymer layer and a second conductive polymer layer are formed on the surface of an anode body made of niobium or an alloy containing niobium as a main component.
- the anode body on which the dielectric film layer is formed may be prepared by adding hydrogen peroxide 0.7 to: L 0 wt% (more preferably 2 to 7 wt%) and sulfuric acid 0 to 0 wt%.
- first conductive polymer layer (a chemically polymerized conductive layer) made of polypyrrole or a polypyrrolyl derivative on the dielectric film layer. Forming a lima layer);
- the anode body on which the dielectric coating layer and the first conductive polymer layer are formed is immersed in a solution (electropolymerization solution) containing a polymerizable monomer and a supporting electrolyte.
- a solution electrolymerization solution
- a high-quality conductive polymer layer can be reliably formed up to the center of the niobium anode body on which the dielectric film layer is formed, and the capacity appearance rate is high and It is possible to provide a solid electrolytic capacitor in which the leakage current is sufficiently reduced by the treatment.
- the material of the second conductive polymer layer in the present invention besides polypyrrole, polythiophene, polyaniline, or a polymer of a derivative thereof, or the like can be used, and the support added to the electrolytic polymerization solution can be used.
- the electrolyte various supporting electrolytes used in combination with the tantalum sintered element can be adopted.
- a water-soluble organic solvent such as alcohol may be added to the oxidizing agent solution used in the step of forming the first conductive polymer layer in order to reduce the surface tension of the solution.
- the concentration of the oxidizing agent solution used in the step of forming the first conductive polymer layer is performed. If the degree is low to some extent, this step is repeated several times, so that a chemically polymerized conductive polymer layer can be sufficiently formed to the center of the device.
- FIG. 1 is a cross-sectional view of a solid electrolytic capacitor.
- FIG. 2 is an experimental result diagram that is the basis of the present invention.
- FIG. 3 is an experimental result diagram which is the basis of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION
- a solid electrolytic capacitor according to an embodiment of the present invention has a dielectric body made of niobium oxide on a surface of an anode body 1 made of niobium (or an alloy containing niobium as a main component).
- Coating layer 2 first conductive polymer layer 31 obtained by chemically polymerizing pyrrole (or a pyrrole derivative), first conductive polymer layer 31 obtained by electrolytic polymerization of a polymerizable monomer such as pyrrole, thiophene, aniline, or a derivative thereof.
- a conductive polymer layer 3 2 a conductive carbon layer and a cathode extraction layer 4 composed of a silver paste layer are sequentially formed to form a capacitor element 14, and an anode lead embedded at one end of the anode body 1.
- the anode lead terminal 51 is welded to the wire 15 and the cathode lead terminal 52 is soldered to the cathode lead layer 4 .
- the outer periphery of the capacitor element 14 is covered with an outer shell layer 6 made of epoxy resin or the like. Covered and sealed That.
- the dielectric film layer is formed by immersing the anode body in a chemical solution such as an aqueous solution of phosphoric acid, an aqueous solution of nitric acid, an aqueous solution of sulfuric acid, or an aqueous solution of ammonium adipate, and then performing a chemical (anodic oxidation) treatment.
- a chemical solution such as an aqueous solution of phosphoric acid, an aqueous solution of nitric acid, an aqueous solution of sulfuric acid, or an aqueous solution of ammonium adipate
- a dense and stable amorphous oxide film grows by setting the temperature of the chemical conversion solution to about 40 or less, more preferably 25 ° C. or less.
- the electrical characteristics of the capacitor for example, a change in capacitance due to a thermal load ⁇ a bias voltage dependence of capacitance
- examples, comparative examples and reference examples will be described focusing on a combination of the material of the anode body and the method of forming the first and second conductive polymer layers.
- CV product 800 000 FV / g Niobium powder 52 mg was sintered together with a buried niobium wire, and the porous anode element was subjected to a chemical conversion treatment at 38 V in a phosphoric acid aqueous solution at 5 ° C to obtain niobium.
- a dielectric film layer made of an oxide was formed.
- the capacitance (capacity in water) measured by immersing this device in an 8 N aqueous sulfuric acid solution was 112 ⁇ F.
- a chemically polymerized polypyrrole layer as a first conductive polymer layer was formed by placing and supporting the monomer directly above the liquid surface and exposing it to pyrrole vapor for 60 minutes. The methanol in the oxidizing agent solution was added to lower the surface tension of the solution.
- this element was immersed in an aqueous solution (electrolytic polymer solution) containing 0.2 mol of pyrrole as a polymerizable monomer and 0.06 mol of ZL as a supporting electrolyte. Then, the solution was energized to electrolytically polymerize the pyrolyl, thereby forming an electrolytically polymerized polypropylene layer as a second conductive polymer layer on the chemically polymerized polypyrrole layer.
- aqueous solution electrolytic polymer solution
- a cathode lead layer composed of a conductive carbon layer and a silver paste layer and an outer shell resin layer composed of an epoxy resin were sequentially formed according to a well-known technique, and subjected to an aging treatment to complete a capacitor.
- Table 1 shows the electrical characteristics of the condenser. ⁇ table 1 ⁇
- ESR is the equivalent series resistance measured at each temperature and frequency listed in the table
- LC is the leakage current 5 minutes after applying a DC voltage of 10 V
- the bias characteristic is 120 H z ⁇
- the capacitance measured by superimposing a DC bias voltage of 1.5 V on an AC voltage of 0.5 V the rate of change from the reference when bias voltage 0 V or 10 V is superimposed is shown. I have.
- Table 1 The characteristics shown in Table 1 are almost the same as those of commercially available tantalum anode Z conductive polymer cathode capacitors in all items, and the disadvantages of niobium anode / conductive polymer cathode capacitors reported so far (2 (Announced at the Research Group on Electrolytic Capacitors on October 12, 2000 and July 12, 2001).
- the capacitance of the capacitor is 98 F (capacitance appearance rate 8 8%) and LC is 9 iA. Was.
- the chemically polymerized polyester layer as the first conductive polymer layer is formed under the same conditions as in Example 1, the second conductive polymer layer is formed by electrolytic polymerization of the thiophene derivative.
- the niobium anode z conductive polymer monocathode capacitor having good aging properties, low leakage current, and high capacity appearance rate.
- an electropolymerization solution obtained by dissolving 0.2 mol of aniline as a polymerizable monomer and 0.1 mol of sulfuric acid as a supporting electrolyte in 970 g of water is used.
- a capacitor was manufactured under the same conditions as in Example 1 except for the following. The capacitance of the capacitor was 58 (capacitance appearance rate: 52%), and the LC was 27 A.
- the second conductive polymer layer is formed by electrolytic polymerization of aniline. Even in this case, it is possible to provide a niobium anode Z conductive polymer cathode capacitor having good aging properties and low leakage current. In this case, the capacity appearance rate is slightly low, but at a practical level, and it can be expected that the capacity appearance rate can be further improved by slightly changing the conditions for forming the electrolytically polymerized polyaniline layer.
- the capacitance of the capacitor was 100 ⁇ F (capacitance appearance ratio: 89%), the ESR was 61 ⁇ (at 100 kHz), and the LC was 32 A.
- the chemically polymerized polypial layer as the first conductive polymer layer was used in the example. If formed under the same conditions as in the case of 1, even if the electrolytically polymerized polypropylene layer as the second conductive polymer layer is formed under slightly different conditions from the case of Example 1, the aging property is excellent.
- a niobium anode Z conductive polymer cathode capacitor having a small leakage current and a high capacitance appearance ratio can be provided.
- Table 2 shows the electrical characteristics of the capacitor.
- the capacitance in water of the anode element used in this example after the formation of the dielectric film was 62 F.
- the concentration of the oxidizing agent solution used for forming the chemically polymerized polypyrrole layer is slightly low, the operation of forming the chemically polymerized polypyrrole layer is repeated to improve the capacity appearance rate and reduce the leakage current. Reduce.
- Example 2 Seven types of capacitors were produced under the same conditions as in Example 1 except that the concentration of hydrogen peroxide in the oxidizing agent solution was changed in the step of forming the first conductive polymer layer. Table 3 and FIG. 2 show the electrical characteristics of the capacitor.
- the anode used in this example The underwater capacitance of the device after formation of the dielectric film layer was 110.
- the peroxy acid in the oxidizing agent solution used to form the chemically polymerized polypyrrole layer is required.
- the hydrogen hydride concentration needs to be 0.7-1 O wt%, and in order to obtain a more preferable level (approximately more than 70%) of the capacity appearance rate, it is used in forming the chemically polymerized polypyrrole layer.
- the concentration of hydrogen peroxide in the oxidant solution must be 2-7 wt%.
- the underwater capacitance of the anode element used in this example after forming the dielectric film layer was 115 ⁇ F, and the capacitance after completion of the capacitor was 103 iF (capacity appearance rate 90%).
- Capacity appearance rate 90% was 90%.
- the tantalum anode element even when the concentration of hydrogen peroxide in the oxidizing agent solution used for forming the chemically polymerized polypyrrole layer is considerably high (that is, see Comparative Example 6).
- a good capacity appearance rate can be obtained even under the condition that a practical level capacity appearance rate cannot be obtained in combination with the niobium anode element).
- Example 7 Seven types of capacitors were produced under the same conditions as in Example 1 except that the concentration of sulfuric acid in the oxidizing agent solution was changed in the step of forming the first conductive polymer layer.
- Table 4 and FIG. 3 show the electrical characteristics of the capacitor.
- the capacitance in water of the anode element used in this example after forming the dielectric film layer was 110 F.
- the capacity appearance rate at the practical level (more than about 40%)
- the sulfuric acid concentration in the oxidizing agent used to form the chemically polymerized polypyrrole layer must be in the range of 0.3 to 3 wt%, and the capacity is more preferable (more than about 70%).
- the concentration of sulfuric acid in the oxidizing agent solution used for forming the chemically polymerized polypyrrole layer must be 0.5 to 2 wt%.
- Example 7 when the concentration of sulfuric acid in the oxidizing agent solution used for forming the chemically polymerized polypyrrole layer was slightly low, the operation for forming the chemically polymerized polypyrrole layer was further repeated to perform the process.
- Example 7 There is a possibility that the capacity appearance rate can be improved to e and ⁇ levels.
- an oxidizing agent solution obtained by dissolving 2.3 wt% or 1 wt% of ammonium persulfate and 2.8 wt% of disodium m-benzenesulfonate in water was used. Except for the above, two types of capacitors were produced under the same conditions as in Example 1.
- Table 5 shows the electrical characteristics of the capacitor.
- the formation conditions in the case of this reference example, the components of the oxidizing agent solution
- the aging process can be performed and the leakage current is reduced, but a practical level of capacity appearance rate cannot be obtained.
- a solution prepared by dissolving 10 g of 3,4-ethylenedioxythiophene and 16 g of iron paratoluenesulfonate in 74 g of isopropanol was cooled to 5 ° C. Then, the anode element having the dielectric film layer formed thereon is immersed in the solution, pulled up, and left at 25 ° C for 1 hour to form the chemically polymerized polythiophene derivative layer as the first conductive polymer layer.
- a capacitor was manufactured under the same conditions as in Example 1 except that the capacitor was formed.
- the capacitance of the capacitor was 85 (capacitance appearance ratio: 76%), and the ESR was 75 ⁇ .
- the aging treatment could not be performed in the short-circuit state with respect to the leakage current.
- the first conductive polymer layer is composed of a chemically polymerized polythiophene derivative, a practical level of capacity appearance rate can be obtained, but it cannot be put to practical use in terms of aging.
- the operation of forming the chemically polymerized polythiophene derivative layer was repeated 10 times under the same conditions as in Reference Example 3, and the operation of forming the second conductive polymer layer was repeated.
- a capacitor was manufactured under the same conditions as in Example 1 except that the capacitor was not used.
- the capacitance of the capacitor was 50 (capacitance appearance rate: 45%), and the ESR was 800 ⁇ .
- the aging process could not be performed in the short-circuit state with respect to the leakage current.
- the anode element on which the dielectric film layer was formed was immersed in an aqueous solution of ammonium persulfate (23 wt%), and after lifting, an aqueous solution containing 7.2 wt% of aniline sulfate was used.
- Two types of capacitors were produced under the same conditions as in Example 1 except that the chemically polymerized polyaniline layer was formed by being immersed in the substrate for 30 minutes or 60 minutes.
- the capacitance of the capacitor is 6.7 ⁇ (capacity appearance rate 6%) when the aniline sulfate solution immersion time in the chemically polymerized polyaniline layer forming step is 30 minutes, and 8.7 when the immersion time is 60 minutes.
- F capacity appearance rate 8%).
- the first conductive polymer layer is composed of the chemically polymerized polyaniline, a practical level of capacitance appearance rate cannot be obtained.
- the capacitance of the capacitor was 1 (capacitance appearance ratio: 0.9%), and the leakage current was 2.
- the methods of forming the conductive polymer layers shown in Reference Examples 2 to 5 all exhibit reasonable performance if a capacitor is manufactured in combination with a tantalum anode element.
- the basic requirements for a capacitor are that the conductive polymer layer is not formed in the center of the device and the appearance rate of the capacitance is extremely low, and the aging does not proceed in a short state.
- the book on niobium anode Z conductive polymer mono-cathode capacitors The technique of the invention suggests that it cannot be easily imagined from the prior art relating to the anode anode Z conductive polymer monocathode capacitor.
- the present invention while taking advantage of the niobium anode body in which the ⁇ V product per unit mass is larger than that of the indium anode body, the aging property, which has been a drawback of the conventional niobium electrolytic capacitor, and the large leakage Problems such as current and its thermal degradation, and the dependence of capacitance on bias voltage were simultaneously solved, and both the capacitance per volume and the performance were higher than those of evening anodes / conductive polymer cathode capacitors.
- a comparable niobium anode / conducting polymer cathode capacitor can be put to practical use, which will bring significant benefits to the electronics industry in terms of cost and global resources.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Description
Claims
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/487,072 US7125764B2 (en) | 2001-08-20 | 2002-08-12 | Method of producing solid electrolytic capacitor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001249210A JP3906043B2 (ja) | 2001-08-20 | 2001-08-20 | 固体電解コンデンサの製造方法 |
| JP2001-249210 | 2001-08-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2003017299A1 true WO2003017299A1 (fr) | 2003-02-27 |
Family
ID=19078252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2002/008231 WO2003017299A1 (fr) | 2001-08-20 | 2002-08-12 | Procede de production d'un condensateur electrolytique solide |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7125764B2 (ja) |
| JP (1) | JP3906043B2 (ja) |
| CN (1) | CN100421192C (ja) |
| WO (1) | WO2003017299A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1309750C (zh) * | 2003-06-27 | 2007-04-11 | 厦门大学 | 一种固体有机电解质及其制备方法 |
Families Citing this family (28)
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|---|---|---|---|---|
| JP2004228424A (ja) * | 2003-01-24 | 2004-08-12 | Nec Tokin Corp | チップ電解コンデンサおよびその製造方法 |
| CN100390912C (zh) * | 2004-12-07 | 2008-05-28 | 宁夏星日电子有限公司 | 固体铌电容器的制造方法 |
| TWI413995B (zh) * | 2005-01-11 | 2013-11-01 | 松下電器產業股份有限公司 | Solid electrolytic capacitor and its manufacturing method |
| CN101151691B (zh) * | 2005-03-30 | 2010-11-24 | 株式会社村田制作所 | 固体电解电容器元件、其制备方法、及固体电解电容器 |
| WO2007020464A1 (en) * | 2005-08-19 | 2007-02-22 | Avx Limited | Solid state capacitors and method of manufacturing them |
| GB0517952D0 (en) * | 2005-09-02 | 2005-10-12 | Avx Ltd | Method of forming anode bodies for solid state capacitors |
| JP4845699B2 (ja) * | 2006-12-08 | 2011-12-28 | 三洋電機株式会社 | 固体電解コンデンサ及び固体電解コンデンサの製造方法 |
| US8057553B2 (en) * | 2007-03-15 | 2011-11-15 | Sanyo Electric Co., Ltd. | Method for manufacturing solid electrolytic capacitor and solid electrolytic capacitor |
| US20080254269A1 (en) * | 2007-04-13 | 2008-10-16 | Yuri Freeman | NbO Capacitors With Improved Performance And Higher Working Voltages |
| JP4931778B2 (ja) * | 2007-11-21 | 2012-05-16 | 三洋電機株式会社 | 固体電解コンデンサ |
| CN101999152B (zh) * | 2008-04-16 | 2013-06-05 | Nec东金株式会社 | 导电聚合物悬浮液,导电聚合物组合物,固体电解电容器及其制造方法 |
| CN102203890B (zh) | 2008-10-29 | 2013-03-20 | 昭和电工株式会社 | 电容器元件的制造方法 |
| WO2010100888A1 (ja) * | 2009-03-02 | 2010-09-10 | 昭和電工株式会社 | 固体電解コンデンサの製造方法 |
| JP2011071087A (ja) * | 2009-03-12 | 2011-04-07 | Sanyo Electric Co Ltd | 導電性高分子膜、電子デバイス、及びこれらの製造方法 |
| JP5484995B2 (ja) | 2009-04-28 | 2014-05-07 | 三洋電機株式会社 | 固体電解コンデンサ及びその製造方法 |
| JP5461110B2 (ja) | 2009-08-28 | 2014-04-02 | 三洋電機株式会社 | 固体電解コンデンサおよびその製造方法 |
| JP5465025B2 (ja) * | 2010-01-27 | 2014-04-09 | Necトーキン株式会社 | 導電性高分子懸濁液およびその製造方法、導電性高分子材料、固体電解コンデンサおよびその製造方法 |
| JP5853160B2 (ja) * | 2010-02-25 | 2016-02-09 | パナソニックIpマネジメント株式会社 | 固体電解コンデンサ |
| US8848342B2 (en) | 2010-11-29 | 2014-09-30 | Avx Corporation | Multi-layered conductive polymer coatings for use in high voltage solid electrolytic capacitors |
| JP5726376B2 (ja) | 2011-05-24 | 2015-05-27 | ケメット エレクトロニクス コーポレーション | 固体電解キャパシタ及びこのキャパシタを形成する方法 |
| JP5788282B2 (ja) | 2011-09-29 | 2015-09-30 | Necトーキン株式会社 | 固体電解コンデンサおよびその製造方法 |
| US9053861B2 (en) | 2012-03-16 | 2015-06-09 | Avx Corporation | Wet capacitor cathode containing a conductive coating formed anodic electrochemical polymerization of a colloidal suspension |
| US9076592B2 (en) | 2012-03-16 | 2015-07-07 | Avx Corporation | Wet capacitor cathode containing a conductive coating formed anodic electrochemical polymerization of a microemulsion |
| US8971020B2 (en) | 2012-03-16 | 2015-03-03 | Avx Corporation | Wet capacitor cathode containing a conductive copolymer |
| US9165718B2 (en) | 2013-09-16 | 2015-10-20 | Avx Corporation | Wet electrolytic capacitor containing a hydrogen protection layer |
| US9183991B2 (en) | 2013-09-16 | 2015-11-10 | Avx Corporation | Electro-polymerized coating for a wet electrolytic capacitor |
| US10403444B2 (en) | 2013-09-16 | 2019-09-03 | Avx Corporation | Wet electrolytic capacitor containing a composite coating |
| CN114121490A (zh) * | 2021-11-25 | 2022-03-01 | 江苏科技大学 | 一种低损耗含氟聚合物多层介质膜、其制备方法及应用 |
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|---|---|---|---|---|
| JPH036217A (ja) * | 1989-05-31 | 1991-01-11 | Nippon Chemicon Corp | 固体電解コンデンサの製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4696835A (en) * | 1984-09-04 | 1987-09-29 | Rockwell International Corporation | Process for applying an electrically conducting polymer to a substrate |
| KR0184637B1 (ko) * | 1989-06-20 | 1999-05-15 | 이우에 사또시 | 고체 전해 콘덴서의 제조 방법 |
| JP2001044080A (ja) * | 1999-07-30 | 2001-02-16 | Nec Corp | 固体電解コンデンサおよびその製造方法 |
-
2001
- 2001-08-20 JP JP2001249210A patent/JP3906043B2/ja not_active Expired - Lifetime
-
2002
- 2002-08-12 CN CNB028162919A patent/CN100421192C/zh not_active Expired - Lifetime
- 2002-08-12 WO PCT/JP2002/008231 patent/WO2003017299A1/ja active Application Filing
- 2002-08-12 US US10/487,072 patent/US7125764B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH036217A (ja) * | 1989-05-31 | 1991-01-11 | Nippon Chemicon Corp | 固体電解コンデンサの製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1309750C (zh) * | 2003-06-27 | 2007-04-11 | 厦门大学 | 一种固体有机电解质及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003059763A (ja) | 2003-02-28 |
| CN100421192C (zh) | 2008-09-24 |
| CN1545713A (zh) | 2004-11-10 |
| US20050030678A1 (en) | 2005-02-10 |
| US7125764B2 (en) | 2006-10-24 |
| JP3906043B2 (ja) | 2007-04-18 |
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