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WO2003026025A3 - Synthesis of layers, coatings or films using collection layer - Google Patents

Synthesis of layers, coatings or films using collection layer Download PDF

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Publication number
WO2003026025A3
WO2003026025A3 PCT/US2002/029608 US0229608W WO03026025A3 WO 2003026025 A3 WO2003026025 A3 WO 2003026025A3 US 0229608 W US0229608 W US 0229608W WO 03026025 A3 WO03026025 A3 WO 03026025A3
Authority
WO
WIPO (PCT)
Prior art keywords
coatings
films
synthesis
layers
substrate
Prior art date
Application number
PCT/US2002/029608
Other languages
French (fr)
Other versions
WO2003026025A2 (en
Inventor
Billy J Stanbery
Original Assignee
Heliovolt Corp
Billy J Stanbery
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/957,123 external-priority patent/US6881647B2/en
Priority claimed from US09/957,132 external-priority patent/US6500733B1/en
Priority claimed from US09/957,050 external-priority patent/US6736986B2/en
Priority claimed from US09/957,121 external-priority patent/US6559372B2/en
Priority claimed from US09/957,207 external-priority patent/US6593213B2/en
Priority claimed from US09/957,125 external-priority patent/US6787012B2/en
Application filed by Heliovolt Corp, Billy J Stanbery filed Critical Heliovolt Corp
Publication of WO2003026025A2 publication Critical patent/WO2003026025A2/en
Publication of WO2003026025A3 publication Critical patent/WO2003026025A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0005—Separation of the coating from the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H10F77/1699—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating Apparatus (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Systems and methods are described for synthesis of films, coatings or layers. A method includes locating a template 525, 547 within at least one of a first precursor layer 530 that is coupled to a first substrate 510 and a second precursor layer 550 that is coupled to a second substrate 540; forming a composition layer 560; and moving the first substrate 510 relative to the second substrate 540, wherein the composition layer 560 remains coupled to the second substrate 540.
PCT/US2002/029608 2001-09-20 2002-09-19 Synthesis of layers, coatings or films using collection layer WO2003026025A2 (en)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US09/957,207 2001-09-20
US09/957,132 2001-09-20
US09/957,123 US6881647B2 (en) 2001-09-20 2001-09-20 Synthesis of layers, coatings or films using templates
US09/957,050 2001-09-20
US09/957,132 US6500733B1 (en) 2001-09-20 2001-09-20 Synthesis of layers, coatings or films using precursor layer exerted pressure containment
US09/957,050 US6736986B2 (en) 2001-09-20 2001-09-20 Chemical synthesis of layers, coatings or films using surfactants
US09/957,121 2001-09-20
US09/957,121 US6559372B2 (en) 2001-09-20 2001-09-20 Photovoltaic devices and compositions for use therein
US09/957,125 2001-09-20
US09/957,207 US6593213B2 (en) 2001-09-20 2001-09-20 Synthesis of layers, coatings or films using electrostatic fields
US09/957,125 US6787012B2 (en) 2001-09-20 2001-09-20 Apparatus for the synthesis of layers, coatings or films
US09/957,123 2001-09-20

Publications (2)

Publication Number Publication Date
WO2003026025A2 WO2003026025A2 (en) 2003-03-27
WO2003026025A3 true WO2003026025A3 (en) 2003-12-18

Family

ID=27560353

Family Applications (6)

Application Number Title Priority Date Filing Date
PCT/US2002/029529 WO2003026022A2 (en) 2001-09-20 2002-09-18 Synthesis of layers, coatings or films using surfactants
PCT/US2002/029684 WO2003026028A2 (en) 2001-09-20 2002-09-18 Apparatus for the synthesis of layers, coatings or films
PCT/US2002/029701 WO2003026026A2 (en) 2001-09-20 2002-09-18 Synthesis of layers, coatings or films using electrostatic fields
PCT/US2002/029605 WO2003026023A2 (en) 2001-09-20 2002-09-19 Synthesis of layers, coatings or films using pressure containment exerted on precursor layers
PCT/US2002/029607 WO2003026024A2 (en) 2001-09-20 2002-09-19 Photovoltaic devices and compositions for use therein
PCT/US2002/029608 WO2003026025A2 (en) 2001-09-20 2002-09-19 Synthesis of layers, coatings or films using collection layer

Family Applications Before (5)

Application Number Title Priority Date Filing Date
PCT/US2002/029529 WO2003026022A2 (en) 2001-09-20 2002-09-18 Synthesis of layers, coatings or films using surfactants
PCT/US2002/029684 WO2003026028A2 (en) 2001-09-20 2002-09-18 Apparatus for the synthesis of layers, coatings or films
PCT/US2002/029701 WO2003026026A2 (en) 2001-09-20 2002-09-18 Synthesis of layers, coatings or films using electrostatic fields
PCT/US2002/029605 WO2003026023A2 (en) 2001-09-20 2002-09-19 Synthesis of layers, coatings or films using pressure containment exerted on precursor layers
PCT/US2002/029607 WO2003026024A2 (en) 2001-09-20 2002-09-19 Photovoltaic devices and compositions for use therein

Country Status (4)

Country Link
EP (3) EP1476906A2 (en)
AU (3) AU2002334597B2 (en)
WO (6) WO2003026022A2 (en)
ZA (2) ZA200404979B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
US9130084B2 (en) 2010-05-21 2015-09-08 Alliance for Substainable Energy, LLC Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1683889B1 (en) * 2003-10-29 2012-08-29 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Surface treatment method and device
US7767904B2 (en) 2006-01-12 2010-08-03 Heliovolt Corporation Compositions including controlled segregated phase domain structures
US20070160763A1 (en) * 2006-01-12 2007-07-12 Stanbery Billy J Methods of making controlled segregated phase domain structures
BRPI0707122A2 (en) 2006-01-12 2011-04-19 Heliovolt Corp apparatus for making segregated phase controlled domain structures
US8034317B2 (en) 2007-06-18 2011-10-11 Heliovolt Corporation Assemblies of anisotropic nanoparticles
DE102008014824B4 (en) 2008-03-18 2014-07-10 Leonhard Kurz Stiftung & Co. Kg Doping films and their use

Citations (6)

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EP0381509A1 (en) * 1989-02-02 1990-08-08 Alcan International Limited A process for producing released vapour deposited films
DE4225385A1 (en) * 1992-07-31 1994-02-03 Siemens Solar Gmbh Continuous cpd. semiconductor layer prodn. process - comprises vapour depositing a 1st discrete layer of one metallic component of semiconductor, etc., esp. for mass prodn. of inexpensive solar cells
EP0621130A2 (en) * 1993-04-23 1994-10-26 Canon Kabushiki Kaisha Solid phase bonding method
WO1997022152A1 (en) * 1995-12-12 1997-06-19 Davis, Joseph & Negley PREPARATION OF CuxInyGazSen (x=0-2, y=0-2, z=0-2, n=0-3) PRECURSOR FILMS BY ELECTRODEPOSITION FOR FABRICATING HIGH EFFICIENCY SOLAR CELLS
US6190453B1 (en) * 1999-07-14 2001-02-20 Seh America, Inc. Growth of epitaxial semiconductor material with improved crystallographic properties
US6251754B1 (en) * 1997-05-09 2001-06-26 Denso Corporation Semiconductor substrate manufacturing method

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US5477088A (en) * 1993-05-12 1995-12-19 Rockett; Angus A. Multi-phase back contacts for CIS solar cells
JP3571785B2 (en) * 1993-12-28 2004-09-29 キヤノン株式会社 Method and apparatus for forming deposited film
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Publication number Priority date Publication date Assignee Title
EP0381509A1 (en) * 1989-02-02 1990-08-08 Alcan International Limited A process for producing released vapour deposited films
DE4225385A1 (en) * 1992-07-31 1994-02-03 Siemens Solar Gmbh Continuous cpd. semiconductor layer prodn. process - comprises vapour depositing a 1st discrete layer of one metallic component of semiconductor, etc., esp. for mass prodn. of inexpensive solar cells
EP0621130A2 (en) * 1993-04-23 1994-10-26 Canon Kabushiki Kaisha Solid phase bonding method
WO1997022152A1 (en) * 1995-12-12 1997-06-19 Davis, Joseph & Negley PREPARATION OF CuxInyGazSen (x=0-2, y=0-2, z=0-2, n=0-3) PRECURSOR FILMS BY ELECTRODEPOSITION FOR FABRICATING HIGH EFFICIENCY SOLAR CELLS
US6251754B1 (en) * 1997-05-09 2001-06-26 Denso Corporation Semiconductor substrate manufacturing method
US6190453B1 (en) * 1999-07-14 2001-02-20 Seh America, Inc. Growth of epitaxial semiconductor material with improved crystallographic properties

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* Cited by examiner, † Cited by third party
Title
LAMMASNIEMI J ET AL: "Characteristics of indium phosphide solar cells bonded on silicon", PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE. LOUISVILLE, MAY 10 - 14, 1993, NEW YORK, IEEE, US, VOL. CONF. 23, PAGE(S) 763-767, ISBN: 0-7803-1220-1, XP010113350 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9130084B2 (en) 2010-05-21 2015-09-08 Alliance for Substainable Energy, LLC Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se

Also Published As

Publication number Publication date
AU2002334597B2 (en) 2005-12-22
WO2003026023A3 (en) 2004-04-15
WO2003026022A2 (en) 2003-03-27
WO2003026028A3 (en) 2003-12-18
ZA200404979B (en) 2005-07-27
AU2002325038B2 (en) 2006-03-09
WO2003026024A2 (en) 2003-03-27
AU2002326953A1 (en) 2003-04-01
WO2003026025A2 (en) 2003-03-27
EP1476906A2 (en) 2004-11-17
WO2003026022A3 (en) 2003-11-20
WO2003026024A3 (en) 2003-12-31
WO2003026023A2 (en) 2003-03-27
ZA200404981B (en) 2005-09-28
EP1470594A2 (en) 2004-10-27
EP1470593A2 (en) 2004-10-27
WO2003026026A2 (en) 2003-03-27
WO2003026026A3 (en) 2003-12-18
WO2003026028A2 (en) 2003-03-27

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