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WO2003036731A1 - Module a semi-conducteur emetteur ou recepteur de lumiere et son procede de fabrication - Google Patents

Module a semi-conducteur emetteur ou recepteur de lumiere et son procede de fabrication Download PDF

Info

Publication number
WO2003036731A1
WO2003036731A1 PCT/JP2001/009234 JP0109234W WO03036731A1 WO 2003036731 A1 WO2003036731 A1 WO 2003036731A1 JP 0109234 W JP0109234 W JP 0109234W WO 03036731 A1 WO03036731 A1 WO 03036731A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar cells
manufacturing
same
semiconductor module
spherical solar
Prior art date
Application number
PCT/JP2001/009234
Other languages
English (en)
French (fr)
Inventor
Josuke Nakata
Original Assignee
Josuke Nakata
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Josuke Nakata filed Critical Josuke Nakata
Priority to JP2003539112A priority Critical patent/JP3904559B2/ja
Priority to AU2001295987A priority patent/AU2001295987B2/en
Priority to US10/492,561 priority patent/US7602035B2/en
Priority to CA2463981A priority patent/CA2463981C/en
Priority to EP01976788A priority patent/EP1445804A4/en
Priority to KR1020037005224A priority patent/KR100619614B1/ko
Priority to PCT/JP2001/009234 priority patent/WO2003036731A1/ja
Priority to CNB018202713A priority patent/CN1220277C/zh
Priority to TW090126553A priority patent/TW512542B/zh
Publication of WO2003036731A1 publication Critical patent/WO2003036731A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/20—Optical components
    • H02S40/22—Light-reflecting or light-concentrating means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1017—Shape being a sphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Photovoltaic Devices (AREA)
PCT/JP2001/009234 2001-10-19 2001-10-19 Module a semi-conducteur emetteur ou recepteur de lumiere et son procede de fabrication WO2003036731A1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2003539112A JP3904559B2 (ja) 2001-10-19 2001-10-19 発光又は受光用半導体モジュールおよびその製造方法
AU2001295987A AU2001295987B2 (en) 2001-10-19 2001-10-19 Light emitting or light receiving semiconductor module and method for manufacturing the same
US10/492,561 US7602035B2 (en) 2001-10-19 2001-10-19 Light emitting or light receiving semiconductor module and method for manufacturing same
CA2463981A CA2463981C (en) 2001-10-19 2001-10-19 Light-emitting or light-receiving semiconductor module, and method for manufacturing the same
EP01976788A EP1445804A4 (en) 2001-10-19 2001-10-19 LIGHT EMITTING OR RECEIVING SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING THE SAME
KR1020037005224A KR100619614B1 (ko) 2001-10-19 2001-10-19 발광 또는 수광용 반도체 모듈 및 그 제조 방법
PCT/JP2001/009234 WO2003036731A1 (fr) 2001-10-19 2001-10-19 Module a semi-conducteur emetteur ou recepteur de lumiere et son procede de fabrication
CNB018202713A CN1220277C (zh) 2001-10-19 2001-10-19 发光或感光半导体组件及其制造方法
TW090126553A TW512542B (en) 2001-10-19 2001-10-26 Semiconductor module for light emitting or light receiving, and the manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/009234 WO2003036731A1 (fr) 2001-10-19 2001-10-19 Module a semi-conducteur emetteur ou recepteur de lumiere et son procede de fabrication

Publications (1)

Publication Number Publication Date
WO2003036731A1 true WO2003036731A1 (fr) 2003-05-01

Family

ID=11737855

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/009234 WO2003036731A1 (fr) 2001-10-19 2001-10-19 Module a semi-conducteur emetteur ou recepteur de lumiere et son procede de fabrication

Country Status (9)

Country Link
US (1) US7602035B2 (ja)
EP (1) EP1445804A4 (ja)
JP (1) JP3904559B2 (ja)
KR (1) KR100619614B1 (ja)
CN (1) CN1220277C (ja)
AU (1) AU2001295987B2 (ja)
CA (1) CA2463981C (ja)
TW (1) TW512542B (ja)
WO (1) WO2003036731A1 (ja)

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JP2005057073A (ja) * 2003-08-05 2005-03-03 Nichia Chem Ind Ltd 発光装置及びその製造方法
EP1553638A4 (en) * 2002-06-21 2006-03-22 Josuke Nakata LIGHT RECEPTOR OR LIGHT EMITTING DEVICE AND METHOD FOR THE PRODUCTION THEREOF
US7214557B2 (en) 2003-10-24 2007-05-08 Kyosemi Corporation Light receiving or light emitting modular sheet and process for producing the same
WO2007080631A1 (ja) * 2006-01-11 2007-07-19 Kyosemi Corporation 受光又は発光用半導体モジュール
WO2007144944A1 (ja) * 2006-06-14 2007-12-21 Kyosemi Corporation ロッド形半導体デバイス
WO2008004277A1 (fr) * 2006-07-04 2008-01-10 Kyosemi Corporation Module semi-conducteur en forme de panneau
WO2008004304A1 (fr) * 2006-07-07 2008-01-10 Kyosemi Corporation Module semi-conducteur en forme de panneau
EP1496381A3 (en) * 2003-07-01 2008-02-06 Matsushita Electric Industrial Co., Ltd. Mount assembly, optical transmission line and photoelectric circuit board
WO2008018116A1 (fr) 2006-08-07 2008-02-14 Kyosemi Corporation Module semi-conducteur pour une génération d'électricité ou une émission de lumière
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WO2010016098A1 (ja) 2008-08-08 2010-02-11 京セミ株式会社 採光型太陽電池モジュール
WO2010016099A1 (ja) * 2008-08-08 2010-02-11 京セミ株式会社 採光型太陽電池モジュール
WO2010070714A1 (ja) * 2008-12-19 2010-06-24 京セミ株式会社 太陽電池モジュール及びその製造方法
JP2011096987A (ja) * 2009-11-02 2011-05-12 Taisei Komu Kk 太陽光発電パネルの診断装置、遮音壁、建造物用の窓ガラス及び乗物用の窓ガラス
US7947894B2 (en) 2006-02-06 2011-05-24 Kyosemi Corporation Light receiving or light emitting semiconductor module
US8154031B2 (en) * 2005-02-28 2012-04-10 Osram Opto Semiconductors Gmbh Module comprising radiation-emitting semiconductor bodies

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EP1445804A4 (en) 2001-10-19 2008-03-05 Josuke Nakata LIGHT EMITTING OR RECEIVING SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING THE SAME
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US7602035B2 (en) 2009-10-13
TW512542B (en) 2002-12-01
EP1445804A1 (en) 2004-08-11
CN1220277C (zh) 2005-09-21
CA2463981A1 (en) 2003-05-01
CA2463981C (en) 2011-11-29
CN1479946A (zh) 2004-03-03
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AU2001295987B2 (en) 2005-10-20
KR100619614B1 (ko) 2006-09-01

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