[go: up one dir, main page]

WO2004065667A1 - Procede de production d'un monocristal - Google Patents

Procede de production d'un monocristal Download PDF

Info

Publication number
WO2004065667A1
WO2004065667A1 PCT/JP2003/016795 JP0316795W WO2004065667A1 WO 2004065667 A1 WO2004065667 A1 WO 2004065667A1 JP 0316795 W JP0316795 W JP 0316795W WO 2004065667 A1 WO2004065667 A1 WO 2004065667A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
crystal
resistivity
raw material
nitrogen
Prior art date
Application number
PCT/JP2003/016795
Other languages
English (en)
Japanese (ja)
Inventor
Ryoji Hoshi
Hiromi Watanabe
Izumi Fusegawa
Original Assignee
Shin-Etsu Handotai Co.,Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co.,Ltd. filed Critical Shin-Etsu Handotai Co.,Ltd.
Publication of WO2004065667A1 publication Critical patent/WO2004065667A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Definitions

  • the present invention relates to a method for producing a low resistivity crystal and a low resistivity nitrogen-doped crystal which are often used as a substrate for an epitaxy wafer which is manufactured as a high quality single crystal wafer.
  • Epitaxy wafers are widely used for individual semiconductors and bipolar
  • MOSLSI is also widely used in microphone-port processor units and flash memory devices because of its excellent soft error and latch-up characteristics.
  • One example of the excellent properties of epitaxial wafers is that there is virtually no so-called row-in defect, which is introduced during the production of single crystals, thus reducing defects such as DRAM reliability. Demand is growing.
  • a low resistivity wafer for epitaxy growth in which the resistivity of the wafer that is the substrate of the epitaxy wafer is 0.1 ⁇ cm or less, has excellent latch-up characteristics and the substrate The importance of gettering capabilities is increasing. Further, it has been proposed to dope with nitrogen to enhance the gettering ability (see, for example, JP-A-2001-139396).
  • the wafer When the resistivity was not so low as described above, the wafer could be reused as a wafer for particle monitors and an wafer for solar cells.
  • low-resistivity crystals of 0.1 Qcm or less and crystals further doped with nitrogen are crystals used for specific applications and contain many dopant impurities.
  • the electrical and defect characteristics change, which makes it difficult to reuse and has to be disposed of.
  • the present invention has been made in view of such a problem, and is intended to reuse an unnecessary portion of a low-resistance crystal containing a large amount of dopant impurities, which had to be discarded in the past, and to grow a low-resistance crystal.
  • the main purpose is to provide a technology that can reduce the cost of producing these crystals and also provide an environment-friendly crystal production method by providing technologies that can save the necessary expensive metal elements. .
  • the present invention for solving the above-mentioned problems is directed to a method for producing a single crystal, which comprises at least a single crystal having a resistivity of 0.1 ⁇ cm or less pulled by the Cjochralski method.
  • This is a method for producing a single crystal, characterized by melting a raw material containing an unnecessary portion derived from an ingot with a crucible and again producing a single crystal having a resistivity of 0.1 ⁇ cm or less by the Czochralski method.
  • the unnecessary portion is a portion having a cone portion, a tail portion, a slip dislocation, a portion having an OSF or a crystal defect, or a resistivity standard out of a single crystal ingot pulled up by the Czochralski method. At least one part, which does not satisfy the oxygen concentration standard, can be used.
  • low-resistivity crystals can be reused by reusing low-resistivity crystal cones, etc., which were conventionally difficult to recycle and had to be disposed of, as raw materials for low-resistivity crystals.
  • the cost of crystal production can be reduced.
  • the unnecessary portion when the unnecessary portion is melted with a crucible as a raw material, it can be used alone or mixed with an unused polycrystalline raw material to reduce the amount of depant used to control the resistivity. It can be.
  • the resistivity of the single crystal to be manufactured again is controlled, A single crystal having a desired resistivity can be obtained, and the amount of expensive dopant can be reduced.
  • the single crystal ingot pulled up by the Czochralski method from which the unnecessary portion is derived is preferably a single crystal doped with polon.
  • the single crystal ingot from which the unnecessary portion is derived is doped with boron
  • boron has a large segregation coefficient of about 0.8, so that most of the boron in the raw material that melts this unnecessary portion Will be re-introduced into the low resistivity crystal to be remanufactured. Therefore, it is possible to save expensive boron elements.
  • the single-crystal ingot pulled up by the Czochralski method from which the unnecessary portion is derived can be a single crystal doped with nitrogen.
  • an unnecessary portion derived from the crystal can be used again as a raw material for a low resistivity nitrogen doped crystal.
  • the segregation coefficient is very small, 0.0007, so even if an unnecessary portion of the nitrogen-doped crystal is used again as a raw material for the nitrogen-doped crystal, it hardly affects the target nitrogen doping concentration. This has the advantage that no adjustment is required for the nitrogen concentration.
  • the single crystal ingot pulled up by the Czochralski method from which the unnecessary portion is derived has a nitrogen concentration of 1 ⁇ 10 10 to 5 ⁇ 10 15 / cm 3 .
  • the nitrogen-doped crystal often has such a nitrogen concentration, and such a concentration does not adversely affect the crystal to be manufactured again.
  • the single-crystal ingot or the polycrystalline raw material drawn by the Czochralski method from which the unnecessary portion is derived is silicon. If the single crystal ingot from which the unnecessary portion is derived and the polycrystalline raw material mixed with the single crystal ingot are silicon, for example, a silicon single crystal produced from the unnecessary portion may be used as a substrate for an epitaxial wafer or a high gettering substrate. Thus, it can be used as a substrate for a semiconductor integrated circuit.
  • the method for producing a single crystal of the present invention is intended to reuse an unnecessary portion of a crystal which had to be discarded because it contains a lot of impurities, and to grow a low resistivity crystal.
  • FIG. 1 is a flowchart showing the manufacturing method of the present invention.
  • FIG. 2 schematically shows a single crystal growing apparatus and HZ that can be used in the method of the present invention.
  • FIG. 3 is a diagram showing the results of measuring the resistivity axial distribution of a single crystal in the case of an unused raw material and in the case of a recycled raw material.
  • Fig. 4 is a diagram showing the required amount of metal polon elements with respect to the resistivity of the raw material and the target resistivity.
  • FIG. 5 is a diagram showing a calculated nitrogen concentration axial distribution.
  • FIG. 6 is a diagram showing the measurement results of nitrogen concentration by SIMS in the case of an unused raw material and in the case of a recycled raw material.
  • Figure 7 is a diagram comparing the calculated values of nitrogen concentration in the case of unused raw materials and the case of recycled raw materials.
  • the present inventors have for the first time conceived the idea of reusing the unnecessary portion of a crystal containing a large amount of dopant impurities as a raw material for a low resistivity crystal containing a large amount of the same dopant impurity. did.
  • this method unlike in the case of reusing as a crystal family with normal resistivity, the change in the electrical and defect characteristics of the crystal manufactured from the recycled material is small, so that it can be reused. .
  • Even if unnecessary parts of the crystal ingot containing more dopant than necessary are reused, there is a segregation phenomenon during crystal growth, so a certain percentage of the raw material melt containing impurities is used. It has the characteristic that it is not incorporated into the crystal only if it is.
  • the present invention is effective even when an unnecessary portion of a crystal ingot containing a smaller amount of dopant impurities than necessary is reused.
  • segregation occurs during crystal growth, and only a certain percentage of the dopant contained in the melt is incorporated into the crystal. This ratio is the segregation coefficient.
  • boron is used as a dopant, but its segregation coefficient is relatively large, about 0.8. Therefore, unnecessary portions of the boron-doped low-resistivity crystal are incorporated into the crystal to be remanufactured by a large amount of boron contained in the molten raw material. As a result, the amount of boron that must be added to re-manufacture a crystal having the required resistivity is significantly reduced, and it is possible to save expensive metal por- tion elements.
  • the unnecessary portion of the low-resistivity crystal ingot is used again as a raw material for the low-resistivity crystal, thereby reducing the amount of dopant to be supplied. It is possible to do.
  • the unnecessary portion of the low resistivity crystal is reused as a raw material for the low resistivity crystal again, not only the unnecessary portion obtained from the low resistivity crystal but also the unused pure polycrystal are used.
  • a desired resistivity can be aimed at by mixing and using the raw materials. For example, if a crystal is grown again from raw material obtained only from the tail of a crystal ingot with a certain resistivity, the resistivity of the remanufactured crystal may be lower than that of the original crystal. There is. Therefore, a desired resistivity can be obtained by mixing unused pure polycrystalline raw materials with unnecessary portions of the low-resistivity crystal. Is 0.001. ⁇ From 0.1 ⁇ cm.
  • an unnecessary portion obtained from the crystal can be used as a raw material for a low-resistivity nitrogen-doped crystal.
  • the segregation coefficient is very small, 0.0007, so even if an unnecessary portion of the nitrogen-doped crystal is used again as a raw material for the nitrogen-doped crystal, the nitrogen-doped crystal has almost no effect on the target nitrogen doping concentration The advantage is that it has no effect.
  • the nitrogen concentration no consideration is required at all, such as adjusting the dopant amount as in the resistivity control by the dopant or adding an unused pure polycrystalline raw material. Therefore, when the unnecessary portion of the nitrogen-doped low resistivity crystal is reused for the nitrogen-doped low resistivity crystal, there is no need to adjust the nitrogen concentration at all.
  • the present invention will be described more specifically, but the present invention is not limited thereto.
  • FIG. 1 is a flowchart showing the manufacturing method of the present invention.
  • a single crystal ingot 1 with a resistivity of 0.1 ⁇ cm or less is pulled up by the Chiyoklarski method.
  • a cone part 3 and a tail part 4 which are unnecessary parts 10, are derived (Fig. 1 (a)).
  • unnecessary portions 10 such as portions having slip dislocations, OSFs and crystal defects, portions not meeting the resistivity standard, and portions not meeting the oxygen concentration standard, are derived from the single crystal ingot 1. I do.
  • the resistivity is again determined using the Chiyoklarski method.
  • a single crystal ingot 11 of 0.1 ⁇ cm or less is manufactured (Fig. 1 (c)). From the remanufactured single crystal ingot 11, if the straight body part 12 as a product is taken out, unnecessary parts 20 such as a cone part 13 and a tail part 14 are derived, but this unnecessary part 20 By repeating the above steps, the raw materials can be reused.
  • a step such as washing may be added between the above steps due to manufacturing reasons.
  • the single crystal growing apparatus shown in FIG. 2 can be used.
  • a crucible 35 is provided in a champ 32 into which a hot zone (H Z) is inserted, and a heater 33 surrounding the crucible 35 is provided.
  • the raw material containing the unnecessary portion of the low resistivity crystal ingot is put into the crucible 35 and is heated and melted by the heater 33 to obtain a raw material melt 36.
  • the unused polycrystalline raw material and the metal element are adjusted and melted as necessary so that the target low resistivity is obtained.
  • rod-shaped single crystal 31 is pulled out of the melt.
  • the crucible 35 can move up and down in the direction of the crystal growth axis, and raises the crucible 35 so as to capture the lowering of the liquid level of the melt that has crystallized and decreased during the crystal growth. Thereby, the height of the surface of the melt 36 is always kept constant.
  • the MCZ method in which a magnetic field is applied to the raw material melt 36 may be used.
  • the manufactured single crystal 31 is inspected to see if its quality such as slip, OSF, resistivity, oxygen concentration, etc. meets the requirements.
  • the tail portion is reused as a raw material for the low resistivity crystal as described above.
  • the hot zone of the single-crystal growth apparatus using the Czochralski method whose schematic diagram is shown in Fig. 2 is equipped with a crucible having a diameter of 32 inches (800 mm) and a diameter of 12 inches (300 mm).
  • Silicon single crystal was grown.
  • Unused pure polycrystalline silicon raw material 3 Charged 20 kg crucible. From this crucible, a crystal having a straight body length of about 120 cm was grown while applying a horizontal magnetic field having a central magnetic field strength of 350 G. At this time, the metal polon element was doped so that the resistivity was 0.008 Qcm at the position of the straight body length O cm (crystal shoulder) of the crystal.
  • a sample in the form of a wafer was taken from the crystal every 25 c Hi, and the resistivity was measured. As a result, as shown in Fig. 3, the resistivity decreases in the length direction of the crystal, and a crystal with a straight body length of about 120 cm (120 cm from the shoulder) and a thickness of 0.06 Q cm is formed. Obtained. Next, the cone part, tail part and regular diameter that are less than the regular diameter of the low-resistivity crystal are satisfied so that the average resistivity of the recycled material is 0.0129 Qcm. Even if it was used, 320 kg of parts that had crystal defects such as slips or did not meet the quality requirements were collected, crushed to a size that could be used as a raw material, and washed. .
  • Fig. 4 shows what percentage of the metal polon should be added when the ratio of the resistivity of the raw material to the target resistivity is used and pure unused raw material is used.
  • the resistivity of the raw material obtained by reusing the unnecessary portion is 0.012 Qcm
  • the target resistivity is 0.008 ⁇ cm
  • the ratio is 0.02 Qcm.
  • 0 1 2 9/0. 0 0 8 1.6 1 2 5 Therefore, from Fig. 4, it is clear that about 58% of the metal boron element in the case of using a pure unused raw material should be introduced. In other words, the savings in metal boron elements can be as much as 42%.
  • the resistivity of the actually remanufactured single crystal was measured in the same manner as for the single crystal manufactured from the unused raw material described above, and as shown by the solid line in FIG.
  • the silicon single crystal re-manufactured from unnecessary parts in 1 had a resistivity distribution equivalent to that of unused raw materials, and was resistant to reuse.
  • the resistivity of the actually remanufactured single crystal was measured in the same manner as for the single crystal manufactured from the above-mentioned unused raw material. As shown by the broken line in FIG.
  • the silicon single crystal remanufactured from Japan also had a resistivity distribution equivalent to that using unused raw materials, and was resistant to reuse.
  • the unnecessary portion derived from the low resistivity crystal ingot can be used as a raw material for low resistivity crystallization.
  • the segregation coefficient of boron is relatively large, about 0.8. Therefore, the boron contained in the raw material obtained by melting the unnecessary portion obtained from the low resistivity crystal is incorporated into the single crystal to be re-manufactured, thereby saving expensive metal boron elements. It becomes possible. At this time, in some cases, a desired resistivity can be obtained by mixing unused pure materials. (Experiment)
  • the target nitrogen concentration was 3 ⁇ 10 13 cm 3 at the straight body portion O cm of the crystal.
  • the segregation coefficient is as small as 0.0007. Therefore, the calculated nitrogen concentration in the above crystal becomes as shown in Fig. 5, and it increases with the length of the cylinder.
  • a sample was taken from a portion near the boundary between the tail portion and the straight body portion of the crystal, and the nitrogen concentration was measured by SIMS.
  • Four samples taken from four similar crystals were used for the measurement.
  • the average value of the nitrogen concentration was approximately 1.2 ⁇ 10 14 Z cm 3 . This compares with calculated values 1. 0 X 1 0 14 atoms Z cm 3 at sampling portion shown in FIG. 5, when considering from the nitrogen concentration measurement accuracy of SIMS, and it is the nitrogen doping as aimed You can see that.
  • the crystal properties other than nitrogen concentration such as oxygen concentration, OSF, lifetime, and FPD (Grown-in defect) were also investigated.
  • the cone and tail portions of the crystal ingot grown as described above were collected, crushed to a size that could be used as a raw material, and washed. Except that this was collected for 32 O kg and this recycled material was used as a raw material, the straight body length was about 120 c under exactly the same conditions as when it was manufactured from the above-mentioned unused raw material.
  • m were grown silicon single crystal having a diameter of 1 2 I inch (3 0 0 mm).
  • Fig. 7 shows the calculated values of the nitrogen concentration at a straight body of 0 cm and a straight body of 120 cm in the case of unused raw materials and the case of recycled raw materials.
  • the segregation coefficient of nitrogen is very small, so the difference between unused and recycled materials is 0.3. /. It turns out that it is very small within.
  • Oxygen concentration, OSF, lifetime, and FPD (Grown-in defect) characteristics were investigated as crystal characteristics other than nitrogen concentration, and all showed the same characteristics as crystals manufactured from unused raw materials. .
  • the unnecessary portion obtained from the nitrogen-doped crystal can be used again as a raw material for the nitrogen-doped crystal.
  • the segregation coefficient is very small, 0.0007, so even if an unnecessary portion of the nitrogen-doped crystal is used again as a raw material for the nitrogen-doped crystal, the nitrogen-doped crystal will almost never reach the target nitrogen doping concentration. Has no effect.
  • the present invention is not limited to the above embodiment.
  • the above embodiment is an exemplification, and has substantially the same configuration as the technical idea described in the claims of the present invention. It is included in the technical scope of the invention.
  • the gist of the present invention is that "a crystal part containing a large amount of dopant impurities, such as a cone part, a tail part, or a crystal defect such as a slip even though the diameter is satisfied, is less than the predetermined diameter.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un procédé de production d'un monocristal consistant à fondre dans un creuset un matériau brut contenant au moins une partie non souhaitée provenant des lingots de monocristal à résistivité équivalant à 0,1 Φcm ou moins relevée en fonction du procédé de Czochralski et formant une fois de plus un monocristal à résistivité équivalant à 0,1 Φcm ou moins en fonction du procédé de Czochralski. Cette technique permet de réutiliser la partie non désirée des cristaux contenant des impuretés dopantes dans des proportions élevées ayant été inévitablement utilisées et permettant d'économiser l'élément métallique coûteux nécessaire à la croissance des cristaux à faible résistivité.
PCT/JP2003/016795 2003-01-20 2003-12-25 Procede de production d'un monocristal WO2004065667A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-10708 2003-01-20
JP2003010708A JP2004224582A (ja) 2003-01-20 2003-01-20 単結晶の製造方法

Publications (1)

Publication Number Publication Date
WO2004065667A1 true WO2004065667A1 (fr) 2004-08-05

Family

ID=32767264

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/016795 WO2004065667A1 (fr) 2003-01-20 2003-12-25 Procede de production d'un monocristal

Country Status (2)

Country Link
JP (1) JP2004224582A (fr)
WO (1) WO2004065667A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9245811B2 (en) 2013-08-14 2016-01-26 Infineon Technologies Ag Method for postdoping a semiconductor wafer
WO2023051346A1 (fr) * 2021-09-29 2023-04-06 西安奕斯伟材料科技有限公司 Procédé de fabrication de silicium monocristallin dopé à l'azote

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4961753B2 (ja) * 2006-01-20 2012-06-27 株式会社Ｓｕｍｃｏ 単結晶製造管理システム及び方法
JP5077966B2 (ja) * 2009-08-27 2012-11-21 シャープ株式会社 シリコンインゴットの製造方法
FR2962849B1 (fr) * 2010-07-16 2014-03-28 Apollon Solar Procede de dopage d'un materiau semi-conducteur

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332594A (ja) * 2000-05-25 2001-11-30 Shin Etsu Handotai Co Ltd パーティクルモニター用単結晶シリコンウェーハの製造方法
JP2002104897A (ja) * 2000-09-26 2002-04-10 Shin Etsu Handotai Co Ltd シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332594A (ja) * 2000-05-25 2001-11-30 Shin Etsu Handotai Co Ltd パーティクルモニター用単結晶シリコンウェーハの製造方法
JP2002104897A (ja) * 2000-09-26 2002-04-10 Shin Etsu Handotai Co Ltd シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9245811B2 (en) 2013-08-14 2016-01-26 Infineon Technologies Ag Method for postdoping a semiconductor wafer
US9559020B2 (en) 2013-08-14 2017-01-31 Infineon Technologies Ag Method for postdoping a semiconductor wafer
WO2023051346A1 (fr) * 2021-09-29 2023-04-06 西安奕斯伟材料科技有限公司 Procédé de fabrication de silicium monocristallin dopé à l'azote

Also Published As

Publication number Publication date
JP2004224582A (ja) 2004-08-12

Similar Documents

Publication Publication Date Title
JP5246163B2 (ja) Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
JP7630040B1 (ja) 連続チョクラルスキー法を用いる窒素ドープ単結晶シリコンインゴットの成長方法およびこの方法により成長させた単結晶シリコンインゴット
EP1170404B1 (fr) Plaquette de silicium et son procede de production
US11680336B2 (en) Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
US20180108538A1 (en) Silicon epitaxial wafer and method of producing same
KR102576552B1 (ko) 연속 쵸크랄스키 방법을 사용하여 단결정 실리콘 잉곳을 성장시키기 위한 방법들
JP4908730B2 (ja) 高抵抗シリコン単結晶の製造方法
US11680335B2 (en) Single crystal silicon ingot having axial uniformity
US7214268B2 (en) Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal wafer
WO2004065667A1 (fr) Procede de production d'un monocristal
JP5262257B2 (ja) 窒素ドープシリコン単結晶の製造方法
KR20030069822A (ko) 고도핑 실리콘 단결정의 제조방법
JP2004175620A (ja) 単結晶の製造方法
KR102872184B1 (ko) 연속 쵸크랄스키 방법을 사용하여 질소 도핑된 단결정 실리콘 잉곳을 성장시키기 위한 방법들 및 이 방법에 의해 성장되는 단결정 실리콘 잉곳

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase