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WO2004111690A1 - Objectif de projection et procede de selection de matieres optiques pour un tel objectif - Google Patents

Objectif de projection et procede de selection de matieres optiques pour un tel objectif Download PDF

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Publication number
WO2004111690A1
WO2004111690A1 PCT/EP2003/006402 EP0306402W WO2004111690A1 WO 2004111690 A1 WO2004111690 A1 WO 2004111690A1 EP 0306402 W EP0306402 W EP 0306402W WO 2004111690 A1 WO2004111690 A1 WO 2004111690A1
Authority
WO
WIPO (PCT)
Prior art keywords
optical element
crystal
alkaline earth
optical
projection lens
Prior art date
Application number
PCT/EP2003/006402
Other languages
German (de)
English (en)
Inventor
Michael Gerhard
Birgit Enkisch
Toralf Gruner
Original Assignee
Carl Zeiss Smt Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Ag filed Critical Carl Zeiss Smt Ag
Priority to PCT/EP2003/006402 priority Critical patent/WO2004111690A1/fr
Priority to AU2003304216A priority patent/AU2003304216A1/en
Publication of WO2004111690A1 publication Critical patent/WO2004111690A1/fr

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

Definitions

  • the invention relates to a projection objective for a microlithographic projection exposure system, which has several groups of successive optical elements, at least one first optical element being arranged in at least one group and consisting of an alkaline earth metal-fluoride mixed crystal in which at least two different ones Alkaline earth metals are included.
  • the invention further relates to a method for selecting optical materials for such a lens.
  • a projection lens of this type is from an article by John H. Burnett et al. with the title "Hidden in Piain Sight: Calcium Fluoride's Intrinsic Birefringence", Photonics Spectra 12/2001, page 88 ff.
  • Microlithographic projection exposure systems such as those used in the manufacture of highly integrated electrical circuits, have an illumination device which is used to generate a projection light beam.
  • the projection light beam is directed onto a reticle, which contains the structures to be imaged by the projection exposure system and is arranged in an object plane of a projection objective.
  • the Giionsob- objective ly the structures forming the reticle onto a light-sensitive surface from ⁇ extending in an image plane of the Projection lens is located and z. B. can be applied to a wafer.
  • Particularly promising mixed crystals are containing calcium and barium, and can be described by the stoichiometric formula CAI y Ba y F 2nd Light in a certain polarization state, which is delayed maximally in calcium fluoride compared to the perpendicular polarization state, is not delayed in barium fluoride and vice versa.
  • the production of such mixed crystals in the required purity and size is even more difficult and therefore more expensive than is already the case with the fluoride-containing pure crystals.
  • the properties of the mixed crystals, depending on the barium content are more or less similar to those of barium fluoride, i.e. H. they are relatively soft, therefore difficult to machine and have high water solubility.
  • the object of the invention is therefore to provide a projection lens of the type mentioned at the outset which has only very small aberrations caused by intrinsic birefringence of the materials used and is nevertheless comparatively inexpensive.
  • At least one second optical element which consists of an alkaline earth metal fluoride pure crystal, is arranged in the at least one group, and that all optical elements are made of an alkaline earth metal fluoride within the at least one group.
  • Mixed crystal and preferably none of the optical elements made of an alkaline earth metal fluoride pure crystal the condition
  • Di 1 GPL 1 * DB (G 1 ) ⁇ S
  • the invention is based on the knowledge that the influence of intrinsic birefringence does not have an unfavorable effect on the imaging properties for all optical elements within the projection objective.
  • delay parameter mi a single scalar variable, which is easy to calculate and is referred to as delay parameter mi, and which summarizes the unfavorable effects of the intrinsic birefringence on the individual optical elements of the projection objective.
  • delay parameter nii as defined above, a comparison parameter is available which allows an estimate to be made of which optical elements are worth using expensive mixed crystals and which optical elements do not require mixed crystals.
  • DB ( ⁇ i) ⁇ k * 9/7 * sin 2 (2, 17 * ⁇ i)
  • the delay parameter is only intended to allow an estimate of the influence of the intrinsic birefringence, exact numerical values are not important when determining the quantity DB ( ⁇ i). For this reason, the value for DB ( ⁇ i) used to determine the deceleration parameter iru can also deviate by at most 10%, preferably by at most 5%, from the values determined by calculation according to the formulas given above.
  • Adjacent groups of optical elements can be separated from one another, for example, by polarization-selective beam splitter layers, retardation plates or diaphragm planes. In most In some cases, however, it will be best not to divide it into individual groups.
  • the at least one group then comprises the entire projection objective.
  • the at least one first optical element preferably consists of an alkaline earth metal fluoride mixed crystal of the formula Xi. y X ' y F 2 , where X, X' are Ca, Ba or Sr and y determines the mixing ratio of the two alkaline earth metals X, X '.
  • the invention further relates to a method with which a selection of materials can be made which leads to a projection objective of a microlithographic projection exposure system which comprises several groups of successive optical elements, at least one group comprising a first optical element which consists of an alkaline earth metal -Fluorid mixed crystal, in which at least two different alkaline earth metals are contained, and should contain at least a second optical element, which consists of an alkaline earth metal fluoride pure crystal.
  • the method according to the invention has the following steps: a) determining a threshold value S;
  • GPL 1 as the geometric path length of an aperture beam striking the optical element L 1 at a maximum opening angle
  • ⁇ i as the opening angle between the aperture beam and the optical axis of the optical element Li
  • DB ( ⁇ i) as a measure of the birefringence of the optical element Li , which is independent of the material and the crystal orientation of the optical element Li;
  • the threshold value S is to be determined from the point of view that with delay parameters m ⁇ which are less than this threshold value, the imaging errors occurring due to intrinsic birefringence can still be tolerated.
  • the threshold value S should be as large as possible, since in this way the additional costs arising from the use of mixed crystals are minimized. It has been shown that in practice threshold values S between 10 mm and 15 mm lead to a particularly balanced relationship between image quality on the one hand and costs on the other.
  • Steps b) and c) are preferably repeated at least once, the changes in the geometric path length GPLi which may result from the choice of material after step c) being taken into account in each case when determining the delay parameters.
  • This iterative process takes into account the fact that when determining the delay parameters, it must first be assumed that the entire projection lens is designed in a specific manner. These include the radii of curvature of the lenses used, coefficients for describing aspherical surfaces, lens thicknesses and
  • FIG. 1 shows a simplified illustration of a catadioptric projection objective according to the invention of a microlithographic projection exposure system in a meridional section;
  • FIG. 2 shows a graph in which the intrinsic birefringence is plotted as a function of the wavelength for calcium fluoride and barium fluoride;
  • FIG. 3 shows an enlarged section of the projection objective from FIG. 1, in which two lenses and an aperture beam passing through them are shown;
  • FIG. 4 shows a flow chart to explain the material selection method according to the invention.
  • FIG. 1 a projection objective of a microlithographic projection exposure system is shown in a simplified manner in a meridional section and has a total of 10 records.
  • the projection objective 10 serves to image structures contained in a reticle 12 on a smaller scale on a light-sensitive surface which is applied to a substrate 14.
  • the reticle 12 is arranged in an object plane and the light-sensitive surface in an image plane of the projection objective 10.
  • Projection light 13, indicated by dashed lines in FIG. 1, which is generated by an illumination device (not shown) of the projection exposure system and has a wavelength ⁇ 157 nm in the exemplary embodiment shown, reaches a beam splitter cube after it has passed through the reticle 12 via a plane-parallel plate 15 and a lens L1 16. There, the projection light bundle is reflected on a polarization-selective beam splitter layer 17 contained therein and is projected onto a spherical mirror 20 via a lens L2, a quarter-wave plate 18 and two further lenses L3 and L4.
  • the projection light bundle After reflection on the spherical mirror 20, the projection light bundle again passes through the lenses L4 and L3, the quarter-wave plate 18 and the lens L2 and falls on the polarization-dependent beam splitter layer 17. There, however, the projection light bundle is not reflected, but transmitted, because the polarization of the projection light beam was rotated through 90 ° by passing twice through the quarter-wave plate 18.
  • the projection light beam arrives from the beam splitter cube 16 via a plane mirror 22 into a dioptical part the projection objective 10, in which lenses L5 to L18 and a further plane-parallel plate 24 are arranged along an optical axis indicated by 26.
  • the optical elements which must be transparent to the projection light either made of CaF 2, or of a CAI y Ba y F2 mixed crystal.
  • these optical elements are exclusively lenses L1 to L18.
  • the plane-parallel plates 15 and 24 or the beam splitter cube 16 can also be made of a fluoride crystal and then also be taken into account in the material selection described below. Another one can also be adapted to the present circumstances
  • FIG. 2 shows, using a graph, the intrinsic birefringence ⁇ n of BaF 2 and CaF 2 as a function of the wavelength ⁇ of the projection light.
  • CaF 2 has a practically vanishing birefringence ⁇ n for longer wavelengths ⁇ .
  • the intrinsic birefringence increases significantly with approximately 1 / ⁇ 2 .
  • BaF 2 has a non-negligible intrinsic birefringence even at longer wavelengths ⁇ , which also increases with approximately 1 / ⁇ 2 towards short wavelengths ⁇ .
  • the two materials differ in terms of the sign of the birefringence ⁇ n. This means that with the same crystal orientation, the maximum delayed polarization states in both materials are orthogonal to one another.
  • the intrinsic birefringence of lenses made from CaF 2 is not negligible.
  • clocking By deliberately turning the crystal lattice of the lenses made of CaF 2 , also referred to as "clocking", as described, for example, in WO 02/093209, it is possible to at least partially compensate for the delays caused by intrinsic birefringence within groups of achieve lenses made of CaF 2 .
  • a complete compensation of the delays is generally not possible, since even with birefringence acting in exactly the opposite way, the geometric path lengths within the lenses and thus also that of distinguish these delays caused.
  • clocking there remains a residual birefringence which cannot be compensated and which worsens the imaging properties.
  • the lenses made from mixed crystals are therefore, if only the imaging properties are considered, in principle preferable to the lenses consisting of CaF 2 .
  • the lenses consisting of mixed crystals have the disadvantage of a considerably higher price, since the production and processing of high-purity mixed crystals are very complex.
  • the lenses made of mixed crystals must not be exposed to moisture, since the mixed crystals have a significantly higher water solubility than CaF 2 .
  • the projection objective 10 therefore not only has lenses made from mixed crystals, but also from CaF 2 . In order to achieve the best possible compromise between costs and good imaging properties, it is necessary, by means of a selection, to determine those lenses in which imaging errors due to intrinsic birefringence are most tolerable.
  • the optical properties including the imaging errors can be determined very precisely using simulation methods.
  • the computing effort is usually too high, To determine the imaging properties for all conceivable material variants in this way.
  • the material selection for the lenses made of fluoride crystals is therefore carried out using a scalable size which is easy to determine and which is assigned to each individual lens Li and which is determined by the equation
  • deceleration parameter m ⁇ is defined and hereinafter referred to as deceleration parameter m ⁇ .
  • the delay parameter ⁇ a. ⁇ represents an approximation of the aberrations caused by intrinsic birefringence. If the delay parameter IUi lies above a threshold value S which is in principle arbitrarily chosen, the relevant lens Li is produced from the mixed crystal. If the delay parameter IUi is below the selected threshold value S, the lens Li in question is preferably made from CaF 2 , unless the use of the more expensive mixed crystal appears appropriate in individual cases.
  • the opening angle ⁇ i is understood to mean the angle that a light beam forms with the optical axis 26;
  • the orientation of a beam to a reference direction perpendicular to the optical axis is described by the azimuth angle ⁇ .
  • c * k denotes a parameter that depends on the crystal orientation and characterizes the relative effectiveness of the optical elements with regard to the intrinsic birefringence.
  • « k -1/2
  • ⁇ k +1/8.
  • the delay in CaF 2 depends on the geometric path length that a projection light beam travels in the relevant lens L 1 .
  • the geometric path length differs depending on the angle at which a projection light beam falls on a lens and the thickness of the lens in this area. This is explained below with reference to FIG. 3.
  • An aperture beam 28 is a beam that occurs at a maximum opening angle Qx on a lens Li.
  • the lens L4 is thicker than the lens L3, and moreover the aperture angle ⁇ 4 at which the aperture beam 28 strikes the lens L4 is larger than the aperture angle ⁇ 3 due to the diverging effect of the lens L3.
  • the geometric path length GPL 4 covered by the aperture beam 28 in the lens L4 is also greater than the geometric path length GPL 3 covered in the lens L3.
  • the beam path of the aperture beams is generally relatively easy to determine for a given optical system with the aid of suitable simulation programs.
  • the delay parameter ⁇ u of a lens Li can thus be determined in a simple manner according to equation (1).
  • the opening angle ⁇ i is also regarded here as an angle that is formed between the aperture beam and an axis that intersects the aperture beam and that results from the optical axis by parallel displacement.
  • a threshold value S is specified in a step S1, which indicates which extent of imaging errors can no longer be tolerated. When determining this, it is to be taken into account, among other things, which requirements are placed on the imaging properties of the projection objective 10.
  • the delay parameter mi is determined for each fluoride lens Li in the manner explained above.
  • the influence of the intrinsic birefringence is for these lenses the use of CaF 2 as a lens material is tolerable.
  • the delay parameter ieri is greater than the threshold value S, so that intolerable imaging errors due to intrinsic birefringence can be expected and the lenses in question should therefore be made from a mixed crystal.
  • Step S4 it can therefore be expedient in an iterative process to first adapt the projection lens to the preliminary selection made in a step S4 after a material selection has been made for the first time in step S3.
  • This generally results in modified geometric path lengths GPLi.
  • Steps S2 and S3 are then carried out again. U. may result in a change in the original material selection.
  • Steps S2, S3 and S4 are preferably repeated until the delay parameters itii no longer change or until a change remains below a predefinable limit value.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un objectif de projection (10) destiné à une installation d'éclairage de projection microlithographique, qui comprend plusieurs groupes d'éléments optiques montés en série. Dans au moins un groupe sont disposés au moins un premier élément optique, constitué d'un cristal pur de fluorure de métal alcalinoterreux, et au moins un second élément optique, constitué d'un cristal mixte constitué de fluorures de métaux alcalinoterreux, lequel comprend au moins deux métaux alcalinoterreux différents. Tous les éléments optiques constitués d'un cristal mixte de fluorures de métaux alcalinoterreux et, de préférence, aucun des éléments optiques constitués d'un cristal pur de fluorure de métal alcalinoterreux respectivement remplissent/ne remplit la condition mi = GPLi * DB (υi) = S. La grandeur mi est un paramètre de retard associé à chaque élément optique Li, GPLi est la longueur de chemin géométrique d'un faisceau d'ouverture (28) venant frapper l'élément optique Li à un angle d'ouverture maximum, υi est l'angle d'ouverture compris entre le faisceau d'ouverture (28) et l'axe optique (26) de l'élément optique Li, DB(υi) correspond à la grandeur de la biréfringence de l'élément optique Li, laquelle est indépendante du matériau constituant l'élément optique Li et de l'orientation du cristal de celui-ci, et S est une valeur seuil unitaire pour tous les éléments optiques Li. L'objectif de projection selon l'invention présente une faible biréfringence et sa production est plus économique si l'on compare avec celle d'un objectif dont tous les éléments optiques sont constitués de cristaux mixtes onéreux.
PCT/EP2003/006402 2003-06-18 2003-06-18 Objectif de projection et procede de selection de matieres optiques pour un tel objectif WO2004111690A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/EP2003/006402 WO2004111690A1 (fr) 2003-06-18 2003-06-18 Objectif de projection et procede de selection de matieres optiques pour un tel objectif
AU2003304216A AU2003304216A1 (en) 2003-06-18 2003-06-18 Projection lens and method for selection of optical materials in such a lens

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2003/006402 WO2004111690A1 (fr) 2003-06-18 2003-06-18 Objectif de projection et procede de selection de matieres optiques pour un tel objectif

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7239450B2 (en) 2004-11-22 2007-07-03 Carl Zeiss Smt Ag Method of determining lens materials for a projection exposure apparatus
US7463422B2 (en) 2004-01-14 2008-12-09 Carl Zeiss Smt Ag Projection exposure apparatus
WO2011146273A1 (fr) * 2010-05-21 2011-11-24 Eastman Kodak Company Conception de lentilles à l'aide d'un critère de performances de biréfringence de contrainte

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1006373A2 (fr) * 1998-11-30 2000-06-07 Carl Zeiss Objectif comportant des lentilles en matériaux cristallins et dispositif d'exposition par projection pour la microlithographie
JP2000356701A (ja) * 1999-06-15 2000-12-26 Tsuguo Fukuda コルキライト型フッ化物混晶からなる真空紫外領域用光学部材および光学部材用コーティング材
EP1063684A1 (fr) * 1999-01-06 2000-12-27 Nikon Corporation Systeme optique de projection, procede de fabrication associe et appareil d'exposition par projection utilisant ce systeme
WO2003006367A1 (fr) * 2001-07-09 2003-01-23 The Government Of The United States Of America, As Represented By The Secretary Of Commerce Minimisation de la birefringence induite par la dispersion spatiale
US20030104318A1 (en) * 2001-09-14 2003-06-05 Allan Douglas C. Photolithographic element blank calcium strontium fluoride UV transmitting mixed fluoride crystal with minimized spatial dispersion

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1006373A2 (fr) * 1998-11-30 2000-06-07 Carl Zeiss Objectif comportant des lentilles en matériaux cristallins et dispositif d'exposition par projection pour la microlithographie
EP1063684A1 (fr) * 1999-01-06 2000-12-27 Nikon Corporation Systeme optique de projection, procede de fabrication associe et appareil d'exposition par projection utilisant ce systeme
JP2000356701A (ja) * 1999-06-15 2000-12-26 Tsuguo Fukuda コルキライト型フッ化物混晶からなる真空紫外領域用光学部材および光学部材用コーティング材
WO2003006367A1 (fr) * 2001-07-09 2003-01-23 The Government Of The United States Of America, As Represented By The Secretary Of Commerce Minimisation de la birefringence induite par la dispersion spatiale
US20030104318A1 (en) * 2001-09-14 2003-06-05 Allan Douglas C. Photolithographic element blank calcium strontium fluoride UV transmitting mixed fluoride crystal with minimized spatial dispersion

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BURNETT J H ET AL: "HIDDEN IN PLAIN SIGHT: CALCIUM FLUORIDE'S INTRINSIC BIREFRINGENCE", PHOTONICS SPECTRA, LONDON, GB, vol. 35, no. 12, December 2001 (2001-12-01), pages 88 - 92, XP001105432 *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 15 6 April 2001 (2001-04-06) *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7463422B2 (en) 2004-01-14 2008-12-09 Carl Zeiss Smt Ag Projection exposure apparatus
US7239450B2 (en) 2004-11-22 2007-07-03 Carl Zeiss Smt Ag Method of determining lens materials for a projection exposure apparatus
WO2011146273A1 (fr) * 2010-05-21 2011-11-24 Eastman Kodak Company Conception de lentilles à l'aide d'un critère de performances de biréfringence de contrainte
CN102906616A (zh) * 2010-05-21 2013-01-30 伊斯曼柯达公司 使用应力双折射性能标准设计透镜

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