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WO2006036037A1 - Appareil et procede d'ebarbage pour boitiers a semi-conducteur - Google Patents

Appareil et procede d'ebarbage pour boitiers a semi-conducteur Download PDF

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Publication number
WO2006036037A1
WO2006036037A1 PCT/KR2004/003063 KR2004003063W WO2006036037A1 WO 2006036037 A1 WO2006036037 A1 WO 2006036037A1 KR 2004003063 W KR2004003063 W KR 2004003063W WO 2006036037 A1 WO2006036037 A1 WO 2006036037A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor package
deflashing
chamber
mold flash
laser
Prior art date
Application number
PCT/KR2004/003063
Other languages
English (en)
Inventor
You-Hie Han
Eun-Jeong Hong
Tae-Kyoung Ryoo
Original Assignee
Eo Technics Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eo Technics Co., Ltd. filed Critical Eo Technics Co., Ltd.
Publication of WO2006036037A1 publication Critical patent/WO2006036037A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates, in general, to an apparatus and method of removing mold flash and, more particularly, to a deflashing apparatus and method intended to remove mold flash, from a semiconductor package using a laser.
  • a semiconductor package is produced through molding after forming input and output terminals to be connected to an exterior main board, using a lead frame or a printed circuit board (PCB), thus protecting semiconductor chips, such as a single device provided by laminating various electronic circuits and wires or an integrated circuit, against external conditions including dust, humidity, and electric and mechanical load, and optimizing and maximizing electric performance of the semiconductor chips.
  • PCB printed circuit board
  • FIG. 1 is a view illustrating an appearance of a conventional semiconductor package.
  • the semiconductor package 10 is configured such that a plurality of semiconductor chips 12 is connected to a lead frame 14 which is made of a metal material.
  • the semiconductor chips 12 are covered with a protective material, such as an Epoxy Molding Compound (EMC).
  • EMC Epoxy Molding Compound
  • Such a process is designated as a molding process.
  • molding compound frequently adheres to the lead frame 14 during the molding process, and the adhered molding material is called "mold flash".
  • FIG. 2 is a view illustrating a state where the mold flash remains on the semiconductor package.
  • the mold flash 16 may be formed on the lead frame 14. Since the mold flash 16 causes the malfunction of a circuit, the mold flash 16 must be removed. Thus, in order to remove the mold flash 16, a method of irradiating a laser onto the mold flash has been used.
  • a laser beam is focused on the mold flash 16 to bum the mold flash 16, and then a cleaning operation is performed using a water jet.
  • this method has a problem that for the laser beam is directly irradiated onto the lead frame 14, the color may be undesirably changed. Such a problem is more serious when the semiconductor package is white.
  • the laser beam is irradiated, with the semiconductor package exposed.
  • this method has another problem that the semiconductor chip or the lead frame is damaged if the laser beam is not precisely irradiated onto the mold flash, making the production efficiency of the semiconductor package reduced.
  • the present invention has been made to solve the above problems in the prior art, and an object of the present invention is to provide a deflashing apparatus and method, capable of removing mold flash of a semiconductor package, and minimizing harm to a lead frame during the fabrication of the semiconductor package.
  • the present invention forms a frozen layer on a surface of a semiconductor package using water vapor contained in the atmosphere, after a molding process is completed, and irradiate a laser onto the frozen layer formed on mold flash.
  • a CO 2 laser be used as the laser.
  • the present invention removes the mold flash, using the following principle. That is, when the CO 2 laser is absorbed by the frozen layer, a large quantity of water vapor is generated. As the water vapor rapidly expands, an impulse wave is generated in a direction opposite to a vapor generating direction.
  • the mold flash maintains a cooled state when the mold flash is removed, the removal efficiency is maximized. Further, since a laser beam does not burn the mold flash but impacts on the mold flash to remove it, the semiconductor package can maintain an excellent appearance.
  • thermoelectric module uses a thermoelectric module to form the frozen layer on the surface of the semiconductor package, and forms the frozen layer by cooling water vapor in a chamber on the surface of the semiconductor package, thus efficiently removing the mold flash of the semiconductor package without incurring great expense.
  • FIG. 1 is a view illustrating the appearance of a conventional semiconductor package
  • FIG. 2 is a view illustrating a state where mold flash remains on the semiconductor package
  • FIG. 3 is a block diagram illustrating the construction of a deflashing apparatus, according to the present invention
  • FIGS. 4A and 4B are views illustrating thermoelectric modules adapted to the present invention.
  • FIG. 5 is a flow chart illustrating a deflashing method, according to the present invention.
  • FIG. 3 is a block diagram illustrating the construction of a deflashing apparatus, according to the present invention.
  • a semiconductor package deflashing apparatus 100 includes a control unit 110, a laser generating means 120, a reflecting means 130, an input unit 140, a display unit 150, and a storage unit 160.
  • the control unit 110 controls the entire operation of the deflashing apparatus 100.
  • the laser generating means 120 generates a laser beam having a predetermined caliber.
  • the reflecting means 130 changes the direction of the laser beam generated by the laser generating means 120, thus focusing the laser beam on a predetermined position of the semiconductor package.
  • the input unit 140 is used to input a control parameter and a control instruction.
  • the display unit 150 displays information, such as an operational state.
  • the storage unit 160 serves to store data.
  • the deflashing apparatus 100 also includes a chamber 170 into which a semiconductor chip to be deflashed is loaded, a holding means 30 which holds a semiconductor package 10, a thermoelectric module (TEM) 40 which cools the holding means 30, and an insulation means 50 which prevents several mechanical units, such as a coupling member 60, from being cooled by the TEM 40.
  • the holding means 30, the TEM 40, and the insulation means 50 form a stage on which the semiconductor package 10 is supported.
  • the coupling member 60 is coupled to, for example, a stage conveying means (not shown) to convey the stage having the semiconductor package 1, thus deflashingthe semiconductor package 10.
  • the TEM 40 is a functional electronic element which directly changes heat energy to electric energy or change electric energy to heat energy.
  • the TEM 40 is also known as a
  • the Peltier element serves as a thermal engineering element to transfer heat from a heat absorbing part to a heat evolving part.
  • the Peltier element is advantageous in that conversion from a cooling operation to a heating operation is allowed by changing a thermoelectric direction, and the Peltier element is controlled not. by an on/off control but by voltage or current, so that fine temperature control is possible. Further, since the Peltier element has no moving parts, no vibration or noise are generated. Furthermore, the Peltier element does not use a Freon refrigerant, so that pollution is prevented.
  • FIGS. 4A and 4B are views illustrating thermoelectric modules adapted to the preset invention.
  • the TEM 40 includes lower conductive layers 420 and upper conductive layers 422 between a lower substrate 410 and an upper substrate 412.
  • Semiconductor chips 430 are provided between the lower conductive layers 420 and the upper conductive layers 422. As electricity is supplied to power supply cables 440 and 442, a cooling operation is executed.
  • the lower and upper substrates 410 and 412 serve to limit the flow of electricity, in addition to efficiently transmitting heat.
  • the lower and upper conductive layers 420 and 422 and the semiconductor chips 430 actually act as a cooling engine. Further, the semiconductor chips 430 are arranged such that P-type semiconductors and N-type semiconductors are connected to each other in series, thus maximizing cooling efficiency.
  • FIG. 4B shows another thermoelectric module.
  • a plurality of holes 450 is formed on the upper substrate 412.
  • the holes 450 are used to efficiently transmit cool air, generated between the semiconductor chips 430 and the conductive layers 420, 422, to an object placed on the upper substrate 412.
  • the holding means 30 provided on the TEM 40 is cooled.
  • the temperature of the semiconductor package 10 is lowered.
  • the interior of the chamber 170 is at room temperature.
  • water vapor is condensed due to the temperature difference between the interior of the chamber 170 and the semiconductor package 10. Thereby, dew forms on the surface of the semiconductor package 10.
  • the holding means 30 be made of a material having excellent heat conductivity, for example, a metal. Further, the holding means 30 is configured such that an upper surface thereof is flat, and the semiconductor package 10 is mounted on the flat upper surface of the holding means 30, thus allowing cool air to be rapidly transmitted to the semiconductor package 10. Alternatively, the holding means 30 may be configured to hold only a guide part of the semiconductor package 10 so that cool air transmitted to the holding means 30 is gradually transmitted from the guide part to an interior of the semiconductor package 10.
  • the lead frame 14 of the semiconductor package 10 is made of a metal material, and a semiconductor chip 12 is covered with a plastic material, such as an EMC. Therefore, the frozen layer 20 is formed on a surface of the lead frame 14, and then subsequently formed on a surface of the EMC which covers the semiconductor chip 12 as well as on a surface of the mold flash.
  • a laser beam is irradiated onto the mold flash of the semiconductor package 10
  • moisture present in the frozen layer 20 rapidly expands.
  • the frozen layer 20 serves to generate an impulse wave that removes the mold flash.
  • a CO 2 laser is adapted to the deflashing apparatus in the present invention. The CO 2 laser is easily absorbed by the frozen layer 20.
  • TEM 40 after loading the semiconductor package 10 into the chamber 170, it is possible to load the semiconductor package 10 into the chamber 170 after preliminarily cooling the semiconductor package 10.
  • moisture present between the semiconductor package 10 and the holding means 30 may freeze after the semiconductor package 10 is loaded into the chamber 170.
  • a preliminary cooling temperature be set higher than a condensation point.
  • the condensation point is the temperature at which water vapor begins to condense into water. The condensation point varies depending on the surrounding humidity and is proportional to the surrounding humidity.
  • the frozen layer 20 is formed on the surface of the semiconductor package 10, using the temperature difference between the interior of the chamber 170 and the semiconductor package 10.
  • the moisture rapidly expands and the impulse wave is generated in a direction opposite to the vapor generating direction. Thereby, the mold flash is removed using the impulse wave.
  • the thickness of the frozen layer 20 formed on the surface of the semiconductor package 10 varies depending on the internal humidity of the chamber 170.
  • the humidity varies depending on the temperature.
  • the sensor 180 is mounted within the chamber 170 to detect the temperature and humidity in the chamber 170, thus regulating the thickness of the frozen layer 20. Since the internal humidity of the chamber 170 is usually low, it is not necessary to be concerned about an increase in thickness of the frozen layer 20 due to excessive humidity. When the internal humidity of the chamber 170 detected by the sensor 180 is lower than a predetermined level, the moisture in the air in the chamber 170 is insufficient, so the sufficiently thick frozen layer 20 is not formed. Thus, in order to solve the problem, the humidifying means 190 is provided, thus supplying moisture to the air in the chamber 170.
  • FIG. 5 is a flow chart illustrating a deflashing method according to the present invention.
  • a control parameter is set at step S30, considering the shape of the semiconductor package 10 and the portion where the mold flash exists.
  • menu items are preset and stored in the storage unit 160. Thereafter, the menu items are called, as necessary.
  • the TEM 40 is driven to cool the semiconductor package 10.
  • the frozen layer 20 is formed on the surface of the semiconductor package 10 at step S40.
  • the semiconductor package 10 may be cooled by the TEM 40, after being loaded into the chamber 170.
  • the semiconductor package 10 may be loaded into the chamber 170 after being preliminarily cooled. Ih this case, as described above, it is preferable that the semiconductor package 10 be preliminarily cooled to a temperature which is higher than the condensation point, thus preventing moisture present between the semiconductor package 10 and the holding means 30 from freezing.
  • the humidifying means 190 supplies moisture to the air in the chamber 170, to form the sufficiently thick frozen layer 20.
  • the stage conveying means is driven to convey the stage having the semiconductor package 10 at a predetermined speed, and the control unit 110 controls the laser generating means 120 to generate the laser at step S50.
  • the laser beam generated by the laser generating means 120 is reflected by the reflecting means 130 and is irradiated onto the surface of the semiconductor package 10 to remove the mold flash at step S60. That is, the CO 2 laser beam which is generated by the laser generating means 120 and reflected by the reflecting means 130 is irradiated onto the frozen layer 20 formed on the mold flash.
  • the CO 2 laser is absorbed by the frozen layer 20, and a large quantity of water vapor is generated.
  • the water vapor rapidly expands, and the impulse wave is generated in a direction opposite to the vapor generating direction, thus removing the mold flash from the lead frame 14.
  • the laser beam does not directly act on the mold flash or the lead frame to which the mold flash is attached, thus preventing the color of the semiconductor package from being changed due to the combustion by the laser beam. Further, because the mold flash is removed while maintaining a cooled state, removal efficiency is maximized.
  • the present invention provides a deflasbing apparatus and method, which forms a frozen layer on a surface of a semiconductor package and irradiates a CO 2 laser beam onto the frozen layer provided on the surface of the semiconductor package, thus generating an impulse wave, therefore efficiently removing the mold flash generated during the fabrication of the semiconductor.
  • the laser beam is not directly irradiated onto the mold flash, thus preventing the mold flash from being burnt, therefore preventing the color of the semiconductor package from being changed, and accomplishing a semiconductor package with high reliability and a superior packaging.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

La présente invention concerne un appareil et un procédé d'ébarbage permettant d'éliminer la bavure de moulage d'un boîtier à semi-conducteur au moyen d'un laser. Selon la présente invention, une couche gelée est formée à la surface d'un boîtier à semi-conducteur, en utilisant de la vapeur d'eau dans l'atmosphère, ensuite un processus de moulage est mis en oeuvre, puis un laser à CO2 irradie la couche gelée formée sur la bavure de moulage. Lorsque le laser à CO2 est absorbé par la couche gelée, une grande quantité de vapeur d'eau est produite. Lorsque la vapeur se dilate rapidement, une onde de choc est produite dans la direction opposée à une direction de production de vapeur, ce qui permet d'éliminer la bavure de moulage en utilisant l'onde de choc. Cette invention permet ainsi d'éliminer facilement une bavure de moulage et de produire un boîtier à semi-conducteur de grande fiabilité et à qualité de montage sous boîtier supérieure, étant donné que le faisceau laser n'est pas directement dirigé sur la bavure de moulage.
PCT/KR2004/003063 2004-09-30 2004-11-25 Appareil et procede d'ebarbage pour boitiers a semi-conducteur WO2006036037A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2004-0077972 2004-09-30
KR1020040077972A KR100475750B1 (ko) 2004-09-30 2004-09-30 반도체 패키지의 디플래싱 장치 및 방법

Publications (1)

Publication Number Publication Date
WO2006036037A1 true WO2006036037A1 (fr) 2006-04-06

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PCT/KR2004/003063 WO2006036037A1 (fr) 2004-09-30 2004-11-25 Appareil et procede d'ebarbage pour boitiers a semi-conducteur

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WO (1) WO2006036037A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104816091B (zh) * 2015-03-18 2016-05-04 山东大学 超薄板材脉冲激光同步铆合焊合方法及装置
CN105127314A (zh) * 2015-09-28 2015-12-09 江苏理工学院 基于超强激光冲击的薄板连接装置及其连接方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978830A (en) * 1989-02-27 1990-12-18 National Semiconductor Corporation Laser trimming system for semiconductor integrated circuit chip packages
US6334311B1 (en) * 1999-03-05 2002-01-01 Samsung Electronics Co., Ltd. Thermoelectric-cooling temperature control apparatus for semiconductor device fabrication facility
US6576867B1 (en) * 1998-12-07 2003-06-10 Advanced Systems Automation Ltd. Method and apparatus for removal of mold flash

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978830A (en) * 1989-02-27 1990-12-18 National Semiconductor Corporation Laser trimming system for semiconductor integrated circuit chip packages
US6576867B1 (en) * 1998-12-07 2003-06-10 Advanced Systems Automation Ltd. Method and apparatus for removal of mold flash
US6334311B1 (en) * 1999-03-05 2002-01-01 Samsung Electronics Co., Ltd. Thermoelectric-cooling temperature control apparatus for semiconductor device fabrication facility

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KR100475750B1 (ko) 2005-03-14

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