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WO2008099528A1 - Display device and method for manufacturing display device - Google Patents

Display device and method for manufacturing display device Download PDF

Info

Publication number
WO2008099528A1
WO2008099528A1 PCT/JP2007/068472 JP2007068472W WO2008099528A1 WO 2008099528 A1 WO2008099528 A1 WO 2008099528A1 JP 2007068472 W JP2007068472 W JP 2007068472W WO 2008099528 A1 WO2008099528 A1 WO 2008099528A1
Authority
WO
WIPO (PCT)
Prior art keywords
display device
electrode
semiconductor film
gate
substrate
Prior art date
Application number
PCT/JP2007/068472
Other languages
French (fr)
Japanese (ja)
Inventor
Ichirou Oki
Kimihiko Yamada
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2008099528A1 publication Critical patent/WO2008099528A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

A display device is provided with a substrate (41); a gate electrode (63) formed on the substrate (41); a gate insulating film (66) formed on the gate electrode (63); a semiconductor film (67) formed on the gate insulating film (66) with a channel region (67a); a source electrode (63) connected to one end of the semiconductor film (67), and a drain electrode (64), which is connected to the other end of the semiconductor film (67) and is connected to the source electrode (63) by having the channel region (67) in between. The source electrode (63) and the drain electrode (64) are formed on the substrate (41) to cover the gate electrode (65), the gate insulating film (66) and the semiconductor film (67), with gaps (71, 72) formed between the electrodes and the gate electrode (65).
PCT/JP2007/068472 2007-02-13 2007-09-24 Display device and method for manufacturing display device WO2008099528A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-032439 2007-02-13
JP2007032439 2007-02-13

Publications (1)

Publication Number Publication Date
WO2008099528A1 true WO2008099528A1 (en) 2008-08-21

Family

ID=39689785

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/068472 WO2008099528A1 (en) 2007-02-13 2007-09-24 Display device and method for manufacturing display device

Country Status (1)

Country Link
WO (1) WO2008099528A1 (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009072451A1 (en) * 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
WO2009107686A1 (en) * 2008-02-27 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof, and electronic device
JP2009276758A (en) * 2008-04-17 2009-11-26 Semiconductor Energy Lab Co Ltd Light-emitting device and method of manufacturing the same
US7749820B2 (en) 2008-03-07 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US7790483B2 (en) 2008-06-17 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof, and display device and manufacturing method thereof
JP2010212677A (en) * 2009-02-16 2010-09-24 Semiconductor Energy Lab Co Ltd Method of manufacturing thin-film transistor and method of manufacturing display device
JP2010251733A (en) * 2009-03-26 2010-11-04 Semiconductor Energy Lab Co Ltd Thin film transistor and display device manufacturing method
US7883943B2 (en) 2008-03-11 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8035107B2 (en) 2008-02-26 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
WO2011160937A1 (en) * 2010-06-21 2011-12-29 Imec Method of manufacturing thin film transistors and transistor circuits
US8101442B2 (en) 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
US8143170B2 (en) 2009-02-13 2012-03-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8202769B2 (en) 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8207026B2 (en) 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
CN110462842A (en) * 2017-04-07 2019-11-15 夏普株式会社 The manufacturing method of TFT substrate, the scanning antenna for having TFT substrate and TFT substrate
TWI755747B (en) * 2009-10-16 2022-02-21 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61185724A (en) * 1985-02-13 1986-08-19 Sharp Corp Manufacturing method of thin film transistor
JPH03161938A (en) * 1989-11-20 1991-07-11 Seiko Instr Inc Manufacture of thin-film transistor
JPH04188770A (en) * 1990-11-22 1992-07-07 Casio Comput Co Ltd Thin-film transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61185724A (en) * 1985-02-13 1986-08-19 Sharp Corp Manufacturing method of thin film transistor
JPH03161938A (en) * 1989-11-20 1991-07-11 Seiko Instr Inc Manufacture of thin-film transistor
JPH04188770A (en) * 1990-11-22 1992-07-07 Casio Comput Co Ltd Thin-film transistor

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2232561A4 (en) * 2007-12-03 2015-05-06 Semiconductor Energy Lab METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING DISPLAY DEVICE
WO2009072451A1 (en) * 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
US7993991B2 (en) 2007-12-03 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
US8035107B2 (en) 2008-02-26 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8901561B2 (en) 2008-02-26 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8361820B2 (en) 2008-02-27 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a liquid crystal display device
JP2014160849A (en) * 2008-02-27 2014-09-04 Semiconductor Energy Lab Co Ltd Thin film transistor
US8049221B2 (en) 2008-02-27 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2009107686A1 (en) * 2008-02-27 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof, and electronic device
US8101442B2 (en) 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
US7749820B2 (en) 2008-03-07 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US8278662B2 (en) 2008-03-07 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US7883943B2 (en) 2008-03-11 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
JP2009276758A (en) * 2008-04-17 2009-11-26 Semiconductor Energy Lab Co Ltd Light-emitting device and method of manufacturing the same
US7790483B2 (en) 2008-06-17 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof, and display device and manufacturing method thereof
US8207026B2 (en) 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
US8143170B2 (en) 2009-02-13 2012-03-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2010212677A (en) * 2009-02-16 2010-09-24 Semiconductor Energy Lab Co Ltd Method of manufacturing thin-film transistor and method of manufacturing display device
JP2014238580A (en) * 2009-02-16 2014-12-18 株式会社半導体エネルギー研究所 Display device
US8709836B2 (en) 2009-02-16 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US7989234B2 (en) 2009-02-16 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8202769B2 (en) 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8441051B2 (en) 2009-03-11 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2010251733A (en) * 2009-03-26 2010-11-04 Semiconductor Energy Lab Co Ltd Thin film transistor and display device manufacturing method
US8372700B2 (en) 2009-03-26 2013-02-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor
TWI755747B (en) * 2009-10-16 2022-02-21 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US11837461B2 (en) 2009-10-16 2023-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US12389631B2 (en) 2009-10-16 2025-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011160937A1 (en) * 2010-06-21 2011-12-29 Imec Method of manufacturing thin film transistors and transistor circuits
CN110462842A (en) * 2017-04-07 2019-11-15 夏普株式会社 The manufacturing method of TFT substrate, the scanning antenna for having TFT substrate and TFT substrate
CN110462842B (en) * 2017-04-07 2022-05-17 夏普株式会社 TFT substrate, scanning antenna including TFT substrate, and method of manufacturing TFT substrate

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