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WO2008038997A1 - Ensemble diode électroluminescente faisant appel à un cadre de montage pourvu d'une couche plaquée à brillance élevée - Google Patents

Ensemble diode électroluminescente faisant appel à un cadre de montage pourvu d'une couche plaquée à brillance élevée Download PDF

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Publication number
WO2008038997A1
WO2008038997A1 PCT/KR2007/004702 KR2007004702W WO2008038997A1 WO 2008038997 A1 WO2008038997 A1 WO 2008038997A1 KR 2007004702 W KR2007004702 W KR 2007004702W WO 2008038997 A1 WO2008038997 A1 WO 2008038997A1
Authority
WO
WIPO (PCT)
Prior art keywords
lead terminal
plated layer
light emitting
emitting diode
diode package
Prior art date
Application number
PCT/KR2007/004702
Other languages
English (en)
Inventor
Nam Young Kim
Tae Kwang Kim
Kyoung Bo Han
Myung Hee Lee
Ji Seop So
Original Assignee
Seoul Semiconductor Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020060093947A external-priority patent/KR100737822B1/ko
Priority claimed from KR1020060138415A external-priority patent/KR100840208B1/ko
Application filed by Seoul Semiconductor Co., Ltd. filed Critical Seoul Semiconductor Co., Ltd.
Publication of WO2008038997A1 publication Critical patent/WO2008038997A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Definitions

  • the present invention relates to a light emitting diode package, and more specifically, to a light emitting diode package employing a leadframe with a high glossy plated layer.
  • a light source system using a light emitting diode chip has been formed by mounting a light emitting diode chip into various kinds of packages depending on their usages to be used. Specifically, in order to increase the light emission intensity within a desired viewing angle, a package in which a light emitting diode chip is mounted in a recess region of a package body encompassing a leadframe has been prevailingly used. As an example of such a package, there is a top-view type light emitting diode package or a side-view type light emitting diode package.
  • FIGS. 1 and 2 are plan and perspective views illustrating a conventional side-view type light emitting diode package, respectively, and Fig. 3 is a sectional view taken along a dashed dotted line A-A of Fig. 1.
  • the side-view type light emitting diode package includes a pair of lead terminals, i.e., first and second lead terminals 11 and 13.
  • the first and second lead terminals 11 and 13 are formed out of a leadframe manufactured with a phosphor bronze plate, and a surface thereof is formed with a silver (Ag) plated layer 14 for increasing the light reflectivity.
  • a Ni plated layer 12 is primarily interposed between the silver plated layer 14 and the leadframe to increase the adhesive property of the silver plated layer.
  • the first and second lead terminals 11 and 13 are supported by a package body 15.
  • the package body 15 is generally formed by insert- molding the lead terminals with polyphthalamide (PPA).
  • the package body 15 has an opening 16 for exposing the first and second lead terminals 11 and 13.
  • the first and second lead terminals 11 and 13 are positioned on a bottom of the opening 16 and spaced apart from each other in the opening 16. Further, each of the first and second lead terminals 11 and 13 protrudes to the outside of the package body 15 in order to be electrically connected to an external power supply.
  • the first and second lead terminals 11 and 13 which protrude outward may have various shapes and be bent with various shapes.
  • Figs. 1 and 2 show the first and second lead terminals 11 and 13 which are bent from a lower surface of the package body 15 to side surfaces thereof to implement a surface mounting.
  • a light emitting diode chip 17 is mounted onto the first lead terminal 11 in the opening 16 to be electrically connected to the first lead terminal 11, and electrically connected to the second lead terminal 13 through a bonding wire.
  • the opening 16 may be filled with a light- transmittable resin 23, and phosphors may be contained in the light-transmittable resin.
  • the conventional side-view type light emitting diode package is provided with the opening 16 of an elongated shape, and sidewalls, specifically sidewalls in a major axis are formed to be inclined to widen a visible angle in the major axis. Accordingly, a side-view type light emitting diode package suitable to a backlight for a display may be provided, and a side-view type light emitting diode which emits white light may be provided by the suitable selection of a light emitting diode chip and a phosphor.
  • the conventional light emitting diode package includes a leadframe, on a surface of which a semi glossy silver plated layer is formed in order to increase the adhesion of the bonding wire 19 for connecting the light emitting diode chip 17 and the second lead terminal 13. Accordingly, when the light emitted from the light emitting diode chip 17 is reflected by the semi glossy plated layers of the first and second lead terminals, the reflectivity is decreased, and as a result, the light emission efficiency is reduced.
  • An object of the present invention is to provide a light emitting diode package capable of improving reflectivity of a lead terminal without reducing the adhesion between the lead terminal and a bonding wire.
  • the present invention for achieving the object provides a light emitting diode package employing a leadframe with a high glossy plated layer.
  • the package includes a leadframe having a first lead terminal and a second lead terminal spaced apart from the first lead terminal.
  • a package body supports the leadframe and has an opening for exposing the first and second lead terminals.
  • a high glossy plated layer is positioned on at least a surface of the first lead terminal exposed through the opening.
  • a semi glossy plated layer is positioned on a surface of the second lead terminal exposed through the opening. Accordingly, the reflectivity of the first lead terminal can be increased without reducing the adhesion between the second lead terminal and a bonding wire.
  • the term “high glossy” is used to indicate that the reflectivity percentage of light, which is emitted from a light emitting diode chip, from a surface is equal to or larger than 90%, while the term “semi glossy” is used to indicate that the reflectivity percentage is smaller than 90%.
  • a semi glossy plated layer may be interposed between the first lead terminal and the high glossy plated layer.
  • the semi glossy plated layer may be formed through the same process as the semi glossy plated layer positioned on the surface of the second lead terminal.
  • both the high glossy plated layer and the semi glossy plated layer may be a silver plated layer. Accordingly, the light emitted from the light emitting diode chip may be reflected with a high reflectivity to thereby increase the light emission efficiency.
  • an underlying plated layer may be interposed between the semi glossy plated layer and/or the high glossy plated layer and the leadframe.
  • the underlying plated layer increases the adhesion between the semi glossy plated layer or the high glossy plated layer and the leadframe.
  • the underlying plated layer may be made of Ni.
  • the light emitting diode package may further include a high glossy plated layer partially positioned on the surface of the second lead terminal.
  • the semi glossy plated layer of the second lead terminal may be positioned on the high glossy plated layer of the second lead terminal.
  • Such a semi glossy plated layer may be made of Ag or Au.
  • the high glossy plated layer of the second lead terminal may be made by plating with Ni.
  • the high glossy plated layer of the second lead terminal may be positioned on the semi glossy plated layer of the second lead terminal. At this time, the semi glossy plated layer of the second lead terminal is exposed through the high glossy plated layer of the second lead terminal.
  • At least one light emitting diode chip is mounted on the first lead terminal, and a bonding wire connects the light emitting diode chip and the second lead terminal.
  • the bonding wire is bonded to the semi glossy plated layer positioned on the surface of the second lead terminal. Accordingly, the adhesion between the bonding wire and the second lead terminal may not be reduced, and the reflectivity of light may be improved by means of the high glossy plated layer provided on the surface of the first lead terminal.
  • a semi glossy plated layer may be partially positioned on the surface of the first lead terminal, and another bonding wire may connect the light emitting diode chip and the semi glossy plated layer partially positioned on the surface of the first lead terminal.
  • the semi glossy plated layer partially positioned on the surface of the first lead terminal may be positioned on the high glossy plated layer of the first lead terminal.
  • the semi glossy plated layer partially positioned on the surface of the first lead terminal may be positioned between the high glossy plated layer of the first lead terminal and the first lead terminal, and the high glossy plated layer of the first lead terminal may be partially positioned in order to expose the semi glossy plated layer.
  • the light reflectivity of a lead terminal onto which a light emitting diode chip is mounted may be improved without reducing the adhesion of the boding wire, thereby increasing the light emission efficiency of a light emitting diode package.
  • Fig. 1 is a plan view illustrating a conventional light emitting diode package.
  • Fig. 2 is a perspective view illustrating the conventional light emitting diode package.
  • Fig. 3 is a sectional view taken along a dashed dotted line A-A of Fig. 1 to illustrate the conventional light emitting diode package.
  • Fig. 4 is a plan view illustrating a light emitting diode package according to an embodiment of the present invention.
  • Fig. 5 is a sectional view taken along a dashed dotted line B-B of Fig. 4 to illustrate the light emitting diode package according to the embodiment of the present invention.
  • Fig. 6 is a sectional view illustrating a light emitting diode package according to another embodiment of the present invention.
  • FIG. 7 and 8 are sectional views illustrating a method for forming a leadframe of the light emitting diode package according to the other embodiment of the present invention.
  • Fig. 9 is a sectional view illustrating a leadframe according to a further embodiment of the present invention.
  • Fig. 10 is a plan view illustrating a light emitting diode package according to a still further embodiment of the present invention.
  • Fig. 4 is a plan view illustrating a side-view type light emitting diode package according to an embodiment of the present invention
  • Fig. 5 is a sectional view taken along a dashed dotted line B-B of Fig. 4.
  • the side-view type light emitting diode package includes a leadframe which has a pair of lead terminals, i.e., first and second lead terminals 51 and 53.
  • the leadframe may be manufactured by punching a phosphor bronze plate.
  • the first and second lead terminals 51 and 53 are supported by a package body 55.
  • the package body 55 may be formed by insert molding the first and second lead terminal 51 and 53.
  • the package body 55 has an opening 58 for exposing the first and second lead terminals 51 and 53, and the opening 58 causes the first and second lead terminals 51 and 53 to be partially exposed.
  • the first and second lead terminals 51 and 53 are positioned in the opening 58 to be spaced apart from each other.
  • each of the first and second lead terminals 51 and 53 protrudes to the outside of the package body 55 in order to be electrically connected to an external power supply.
  • the first and second lead terminals 51 and 53 which protrude outward may have various shapes and be bent with various shapes.
  • the first and second lead terminals 51 and 53 which are bent from a lower surface of the package body 55 to side surfaces thereof to enable the surface mounting.
  • a semi glossy plated layer 54 is positioned on a surface of the second lead terminal 53 exposed through the opening portion.
  • the semi glossy plated layer 54 may be formed on the entire surface of the second lead terminal 53.
  • an underlying plated layer 52 may be interposed between the semi glossy plated layer 54 and the second lead terminal 53.
  • the underlying plated layer 52 may be formed by plating with Ni.
  • a high glossy plated layer 56 is positioned on at least a surface of the first lead terminal 51 exposed through the opening 58. Further, the semi glossy plated layer 54 may be interposed between the high glossy plated layer 56 and the first lead terminal 51, and the underlying plated layer 52 may be interposed between the semi glossy plated layer 54 and the first lead terminal 51. As shown in the figures, the high glossy plated layer 56 is formed on an upper surface of the first lead terminal 51 in order to reflect light, but it may be formed to extend onto a lower surface of the first lead terminal 51.
  • the first and second lead terminals 51 and 53 having the plated layers 52, 54 and 56 may be formed as described below.
  • the underlying plated layer 52 and the semi glossy plated layer 54 are formed on the leadframe through the same method as the prior art.
  • the underlying plated layer 52 may be conventionally formed by plating with Ni, while the semi glossy plated layer 54 may be formed of Ag through a conventional plating technique.
  • a mask layer is formed on the leadframe in order to expose at least a portion of an upper portion of the first lead terminal.
  • the mask layer may be formed of, for example, photoresist, so that the mask layer may allow the semi glossy plated layer 54 on the surface of the first lead terminal to be exposed.
  • the high glossy plated layer 56 is formed on a surface of the first lead terminal 51.
  • the high glossy plated layer 56 may also be formed by plating with Ag, and by controlling a current density or an addition agent such as brightener or the like which is added to a plating solution by using an electroplating technique. Accordingly, the high glossy plated layer 56 is formed on the first lead terminal 51 exposed by the mask layer. Then, by removing the mask layer, formation of the plated layers of the first and second lead terminals 51 and 53 is completed.
  • the high glossy plated layer 56 may be formed on the entire upper surface of the first lead terminal 51 exposed through the opening 58 of the package body 55.
  • a light emitting diode chip 57 is mounted on the first lead terminal 51 and electrically connected to the second lead terminal 53 through a bonding wire 59. At this time, the bonding wire 59 is bonded to the semi glossy plated layer 54 of the second lead terminal 53, which maintains the same adhesion as the prior art.
  • a transparent resin 63 may be formed on the light emitting diode chip
  • the transparent resin may be formed in the opening 58 by potting liquid phase resin.
  • the transparent resin may be formed of, for example, epoxy or silicone resin, and contain a phosphor for converting light emitted from the light emitting diode chip 57, for example, blue light, to yellow light. Accordingly, a side-view type light emitting diode package emitting white light may be provided.
  • the light emitting diode chip 57 and the phosphor may be variously selected, so that the light having variable colors may be implemented.
  • the high glossy plated layer 56 is also partially formed on the surface of the first lead terminal except for a portion to which the bonding wires are bonded. That is, the high glossy plated layer may be partially positioned so as to expose a region of the first lead terminal, and the bonding wire for connecting the first lead terminal and the light emitting diode chip may be connected to the exposed region. Further, the semi glossy plated layer may be exposed on a region of the first lead terminal, and the bonding wire may be connected to the exposed semi glossy plated layer. Accordingly, the adhesion of the bonding wire connected to the first lead terminal can be prevented from being reduced.
  • Fig. 6 is a sectional view illustrating a side-view type light emitting diode according to another embodiment of the present invention.
  • the first and second lead terminals 51 and 53 are supported by a package body 50, and the package body 50 has an opening 58 (in Fig. 4) for exposing the first and second lead terminals 51 and 53.
  • the first and second lead terminals 51 and 53 are positioned to be spaced apart from each other in the opening 58, and each of the first and second lead terminals 51 and 53 protrudes to the outside of the package body 50 in order to be electrically connected to an external power supply.
  • a first plated portion 74 is positioned on a surface of the second lead terminal 53.
  • the first plated portion 74 may be formed by plating a portion of the second lead terminal 53 with metal for the purpose of adhesion of the bonding wire 59.
  • the surface area and shape of the first plated portion 74 can be appropriately adjusted in consideration of the easiness of the wire bonding and the metal plating for the formation of the first plated portion.
  • the first plated portion 74 is made of metal, such as Ag or Au, which maintains an excellent adhesion of the bonding wire.
  • a second plated portion 75 which is a high glossy plated layer for increasing the light reflectivity is positioned on a region of the surface of the second lead terminal 53 except for the first plated portion 74. Meanwhile, the high glossy plated layer may also be on a surface of the first lead terminal 51.
  • the second plated portion 75 is formed of high glossy metal in order to increase the light reflectivity, and, for example, may be formed with a high glossy metal such as Ni.
  • the first plated portion 74 may be positioned on the second plated portion 75 as shown, but the present invention is not limited thereto. That is, the first plated portion 74 may be positioned under the second plated portion 75 or to the same level as the second plated portion 75. An embodiment in which the first plated portion 74 is positioned under the second plated portion 75 will be described later with reference to Fig. 9.
  • the first plated portion 74 is formed on an upper surface of the second lead terminal 53 for the purpose of adhesion of the bonding wire 59. Also, the first plated portion may be formed to extend toward a lower surface of the second lead terminal. In this case, the second plated portion 75 may be interposed between the second lead terminal 53 and the first plated portion 74 on the lower surface of the second lead terminal 53.
  • Figs. 7 and 8 are sectional views illustrating a leadframe fabrication method for forming the first and second lead terminals 51 and 53 of the side-view type light emitting diode package illustrated in Fig. 6. [49] Firstly, referring to Fig. 7, the second plated portion 75 is formed on the leadframe.
  • the second plated portion 75 may be formed by plating with a high glossy metal, generally Ni, to increase the light reflectivity efficiency. Then, a mask layer 80 is formed on the leadframe to at least partially expose the upper portion of the second lead terminal 53 for providing a region on which the bonding wire 59 is bonded.
  • the mask layer may be formed of, for example, photoresist, and the mask layer causes a portion of the second plated portion 75 on the surface of the second lead terminal 53 to be exposed.
  • the first plated portion 74 is formed on a surface of the second plated portion 75.
  • the first plated portion 74 may be formed by plating with a metal for increasing the adhesion of the bonding wire 59, generally Ag or Au, and by adjusting the current density or the like using an electroplating technique. Accordingly, the first plated portion 74 is formed on the portion of the second lead terminal 53 exposed by the mask layer. Then, the mask layer is removed, whereby the plated layers of the first and second lead terminals 51 and 53 are completed.
  • the light emitting diode chip 57 is mounted on the first lead terminal 51, and electrically connected to the first plated portion 74 of the second lead terminal 53 through the bonding wire 59. At this time, the bonding wire 59 is bonded to the first plated portion 74 of the second lead terminal 53, which maintains the same adhesion as the prior art.
  • the transparent resin 63 may be formed on the light emitting diode chip 57.
  • Fig. 9 is a sectional view illustrating a leadframe according to a further embodiment of the present invention.
  • the underlying plated layer 52 which is plated metal such as Ni is positioned on the entire surfaces of the first and second lead terminals 51 and 53 exposed through the opening 58 (in Fig. 4) of the package body 50 (in Fig. 4), and the first plated portion 54, i.e., the semi glossy plated layer of metal such as Ag or Au, is positioned on the underlying plated layer 52.
  • the underlying plated layer 52 and the first plated portion 54 are formed on the leadframe made of a phosphor bronze plate through the same plating technique as the prior art.
  • a second plated portion 86 is positioned on a region of the first plated portion 54 positioned on the surface of the second lead terminal 53 except for a portion to which the bonding wire 59 is bonded.
  • a mask layer is formed on the portion of the surface of the first plated portion 54 of the leadframe to which the bonding wire 59 of the second lead terminal 53 is bonded.
  • the mask layer may be formed of, for example, photoresist, and a portion of the first plated portion 54 on the surface of the second lead terminal 53 is covered with the mask layer.
  • the second plated portion 86 may be formed on the portion of the first plated portion 54 exposed through the mask layer.
  • the second plated portion 86 may be formed by plating with a metal, such as Ni or Ag, having the excellent light reflectivity efficiency through an electroplating technique by controlling a current density or an addition agent such as brightener which is added to a plating solution. Accordingly, the second plated portion 86 is formed on a region except for a portion of the second lead terminal 53 covered with the mask layer. Then, by removing the mask layer, the plated layers of the first and second lead terminals 51 and 53 are completed.
  • a metal such as Ni or Ag
  • a side-view type light emitting diode package has been described as an example.
  • the present invention is not limited thereto, but may be applied to all kinds of light emitting diode packages employing leadframes having the first and second lead terminals.
  • the light emitting diode chip is a 1 bonding chip, i.e., the light emitting diode chip is electrically connected on the first lead terminal, and electrically connected to the second lead terminal by one bonding wire.
  • the present invention is not limited thereto, but may be also applied to a case where the light emitting diode chip is a 2 bonding chip, i.e., two bonding wires are used to electrically connect the light emitting diode chip to the respective lead terminals. Such a case will be described in detail hereinafter with reference to Fig. 10.
  • Fig. 10 is a plan view illustrating a side-view type light emitting diode package according to a still further embodiment of the present invention.
  • the light emitting diode package according to this embodiment corresponds to a case where a light emitting diode chip is a 2 bonding chip, i.e., two bonding wires are used to electrically connect the light emitting diode chip to the respective lead terminals. Therefore, since the other descriptions except for the above features are identical with those of the previous embodiments, the detailed descriptions thereof will be omitted herein.
  • a third plated portion 94 of a metal such as Ag or Au with an excellent adhesion of the bonding wire is partially formed on a portion of the surface of the first lead terminal 51 to which another bonding wire 59a is bonded, as well as on the surface of the second lead terminal 53.
  • the third plated portion 94 may be formed on the second plated portion 75 like the first plated portion 74 illustrated with reference to Fig. 6, or may be formed from the first metal plated portion 54 exposed through the second plated portion 86 as illustrated with reference to Fig. 9.
  • a fourth plated portion 75 of a high glossy plated layer is formed on a region except for the portion on which the third plated portion 94 is formed, using a metal having an excellent light reflectivity such as Ni or Ag.
  • the fourth plated portion 75 may be also formed on or under the third plated portion 94 or at the same level as the third plated portion 94.
  • the bonding wire 59a for connecting the first lead terminal 51 and the light emitting diode chip is bonded to the third plated portion 94, so that the adhesion of the bonding wire connected to the first lead terminal may be prevented from being reduced.

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Abstract

L'invention concerne un ensemble diode électroluminescente faisant appel à un cadre de montage pourvu d'une couche plaquée hautement brillante. Cet ensemble comprend un cadre de montage possédant une première borne conductrice et une seconde borne conductrice espacée de la première borne conductrice. Un corps assure le support du cadre de montage et comporte une ouverture permettant la mise à nu desdites première et seconde bornes conductrices. Concomitamment, une couche plaquée hautement brillante est disposée sur au moins une surface de la première borne conductrice mise à nu par l'ouverture. En outre, une couche plaquée semi-brillante est disposée sur au moins une surface de la seconde borne conductrice mise à nu par l'ouverture. Par conséquent, la réflectivité de la première borne conductrice peut être élevée sans réduction de l'adhérence entre la seconde borne conductrice et le fil de connexion, ce qui permet d'augmenter l'efficacité d'émission lumineuse de l'ensemble diode électroluminescente.
PCT/KR2007/004702 2006-09-27 2007-09-27 Ensemble diode électroluminescente faisant appel à un cadre de montage pourvu d'une couche plaquée à brillance élevée WO2008038997A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020060093947A KR100737822B1 (ko) 2006-09-27 2006-09-27 고광택 도금층을 구비하는 리드프레임을 채택한 발광다이오드 패키지
KR10-2006-0093947 2006-09-27
KR1020060138415A KR100840208B1 (ko) 2006-12-29 2006-12-29 발광 다이오드 패키지
KR10-2006-0138415 2006-12-29

Publications (1)

Publication Number Publication Date
WO2008038997A1 true WO2008038997A1 (fr) 2008-04-03

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PCT/KR2007/004702 WO2008038997A1 (fr) 2006-09-27 2007-09-27 Ensemble diode électroluminescente faisant appel à un cadre de montage pourvu d'une couche plaquée à brillance élevée

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EP2228842A3 (fr) * 2009-03-10 2010-11-03 LG Innotek Co., Ltd. Conditionnement de dispositif électroluminescent
US8610156B2 (en) 2009-03-10 2013-12-17 Lg Innotek Co., Ltd. Light emitting device package
DE102012109139A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauelement, Elektronische Baugruppe, Verfahren zum Herstellen von Gehäusen und Verfahren zum Herstellen elektronischer Baugruppen
DE102013103226A1 (de) * 2013-03-28 2014-10-02 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
JP2017135380A (ja) * 2016-01-28 2017-08-03 エルジー イノテック カンパニー リミテッド 発光素子パッケージ及びこれを備えた発光装置
US10593848B2 (en) 2015-08-28 2020-03-17 Lg Innotek Co., Ltd. Light emitting device package and light emitting apparatus

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JP2005026276A (ja) * 2003-06-30 2005-01-27 Hitachi Aic Inc 発光デバイス用基板および発光デバイス
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Publication number Priority date Publication date Assignee Title
US6518508B2 (en) * 2000-12-08 2003-02-11 Samsung Techwin Co., Ltd. Ag-pre-plated lead frame for semiconductor package
JP2005026276A (ja) * 2003-06-30 2005-01-27 Hitachi Aic Inc 発光デバイス用基板および発光デバイス
JP2006066504A (ja) * 2004-08-25 2006-03-09 Hitachi Cable Precision Co Ltd 表面実装型白色ｌｅｄ
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EP2228842A3 (fr) * 2009-03-10 2010-11-03 LG Innotek Co., Ltd. Conditionnement de dispositif électroluminescent
US8258538B2 (en) 2009-03-10 2012-09-04 Lg Innotek Co., Ltd. Light emitting device package
US8610156B2 (en) 2009-03-10 2013-12-17 Lg Innotek Co., Ltd. Light emitting device package
US8987775B2 (en) 2009-03-10 2015-03-24 Lg Innotek Co., Ltd. Light emitting device package
TWI492426B (zh) * 2009-03-10 2015-07-11 Lg Innotek Co Ltd 發光裝置封裝
US9318677B2 (en) 2009-03-10 2016-04-19 Lg Innotek Co., Ltd. Light emitting device package
DE102012109139A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauelement, Elektronische Baugruppe, Verfahren zum Herstellen von Gehäusen und Verfahren zum Herstellen elektronischer Baugruppen
DE102013103226A1 (de) * 2013-03-28 2014-10-02 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
US10411168B2 (en) 2013-03-28 2019-09-10 Osram Opto Semiconductors Gmbh Semiconductor component having a small structural height
DE112014001665B4 (de) 2013-03-28 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
US10593848B2 (en) 2015-08-28 2020-03-17 Lg Innotek Co., Ltd. Light emitting device package and light emitting apparatus
JP2017135380A (ja) * 2016-01-28 2017-08-03 エルジー イノテック カンパニー リミテッド 発光素子パッケージ及びこれを備えた発光装置

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