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WO2008146847A1 - 薄膜トランジスタ用ゲート絶縁膜形成剤 - Google Patents

薄膜トランジスタ用ゲート絶縁膜形成剤 Download PDF

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Publication number
WO2008146847A1
WO2008146847A1 PCT/JP2008/059819 JP2008059819W WO2008146847A1 WO 2008146847 A1 WO2008146847 A1 WO 2008146847A1 JP 2008059819 W JP2008059819 W JP 2008059819W WO 2008146847 A1 WO2008146847 A1 WO 2008146847A1
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WIPO (PCT)
Prior art keywords
insulating film
gate insulating
thin
film transistor
forming agent
Prior art date
Application number
PCT/JP2008/059819
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English (en)
French (fr)
Inventor
Shinichi Maeda
Takahiro Kishioka
Original Assignee
Nissan Chemical Industries, Ltd.
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Filing date
Publication date
Application filed by Nissan Chemical Industries, Ltd. filed Critical Nissan Chemical Industries, Ltd.
Priority to US12/451,730 priority Critical patent/US8436339B2/en
Priority to KR1020097024193A priority patent/KR101451761B1/ko
Priority to JP2009516340A priority patent/JP5196194B2/ja
Priority to EP08776934.5A priority patent/EP2157614B1/en
Priority to CN2008800181283A priority patent/CN101681929B/zh
Publication of WO2008146847A1 publication Critical patent/WO2008146847A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/182—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing using pre-adducts of epoxy compounds with curing agents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0622—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
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    • C—CHEMISTRY; METALLURGY
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    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
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    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0622—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
    • C08G73/0638—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with at least three nitrogen atoms in the ring
    • C08G73/065—Preparatory processes
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    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0622—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
    • C08G73/0638—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with at least three nitrogen atoms in the ring
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    • C—CHEMISTRY; METALLURGY
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    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
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    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Epoxy Resins (AREA)

Abstract

【課題】ゲート絶縁膜の製造直後の初期の電気特性だけでなく、ゲート絶縁膜を用いて有機薄膜トランジスタを作製する際の他の工程を経た後の電気特性や、作製された素子の電気特性における信頼性までをも考慮した新規なゲート絶縁膜形成材料の提供。 【解決手段】窒素原子上の置換基としてヒドロキシアルキル含有基を有するトリアジントリオン環を有する繰り返し単位を含むオリゴマー化合物又はポリマー化合物並びに溶媒を含むことを特徴とする薄膜トランジスタ用ゲート絶縁膜形成剤、それから得られる薄膜トランジスタ用ゲート絶縁膜及び該絶縁膜を有する薄膜トランジスタ、並びにこれらの製造方法。
PCT/JP2008/059819 2007-05-30 2008-05-28 薄膜トランジスタ用ゲート絶縁膜形成剤 WO2008146847A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US12/451,730 US8436339B2 (en) 2007-05-30 2008-05-28 Gate insulating film forming agent for thin-film transistor
KR1020097024193A KR101451761B1 (ko) 2007-05-30 2008-05-28 박막 트랜지스터용 게이트 절연막 형성제
JP2009516340A JP5196194B2 (ja) 2007-05-30 2008-05-28 ゲート絶縁膜とその形成剤、製造方法及びそれを用いる薄膜トランジスタ並びにその製造方法
EP08776934.5A EP2157614B1 (en) 2007-05-30 2008-05-28 Gate insulating film forming agent for thin-film transistor
CN2008800181283A CN101681929B (zh) 2007-05-30 2008-05-28 薄膜晶体管用栅极绝缘膜形成剂

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-143772 2007-05-30
JP2007143772 2007-05-30

Publications (1)

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WO2008146847A1 true WO2008146847A1 (ja) 2008-12-04

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PCT/JP2008/059819 WO2008146847A1 (ja) 2007-05-30 2008-05-28 薄膜トランジスタ用ゲート絶縁膜形成剤

Country Status (7)

Country Link
US (1) US8436339B2 (ja)
EP (1) EP2157614B1 (ja)
JP (1) JP5196194B2 (ja)
KR (1) KR101451761B1 (ja)
CN (1) CN101681929B (ja)
TW (1) TWI456768B (ja)
WO (1) WO2008146847A1 (ja)

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WO2013035787A1 (ja) 2011-09-08 2013-03-14 日産化学工業株式会社 重合体及びそれを含む組成物並びに接着剤用組成物
JP2015109471A (ja) * 2009-11-13 2015-06-11 株式会社半導体エネルギー研究所 半導体装置
JP2021024791A (ja) * 2019-08-02 2021-02-22 四国化成工業株式会社 アリルイソシアヌレート化合物およびその合成方法

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Publication number Priority date Publication date Assignee Title
JP2015109471A (ja) * 2009-11-13 2015-06-11 株式会社半導体エネルギー研究所 半導体装置
WO2013035787A1 (ja) 2011-09-08 2013-03-14 日産化学工業株式会社 重合体及びそれを含む組成物並びに接着剤用組成物
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US10202528B2 (en) 2011-09-08 2019-02-12 Nissan Chemical Industries, Ltd. Polymer and composition including same, and adhesive composition
JP2021024791A (ja) * 2019-08-02 2021-02-22 四国化成工業株式会社 アリルイソシアヌレート化合物およびその合成方法

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TW200913277A (en) 2009-03-16
TWI456768B (zh) 2014-10-11
US8436339B2 (en) 2013-05-07
KR20100020451A (ko) 2010-02-22
CN101681929B (zh) 2011-10-19
CN101681929A (zh) 2010-03-24
KR101451761B1 (ko) 2014-10-16
EP2157614B1 (en) 2017-03-01
US20100133518A1 (en) 2010-06-03
EP2157614A1 (en) 2010-02-24
JP5196194B2 (ja) 2013-05-15

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