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WO2008153068A1 - Dispositif semi-conducteur au nitrure et son procédé de fabrication - Google Patents

Dispositif semi-conducteur au nitrure et son procédé de fabrication Download PDF

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Publication number
WO2008153068A1
WO2008153068A1 PCT/JP2008/060696 JP2008060696W WO2008153068A1 WO 2008153068 A1 WO2008153068 A1 WO 2008153068A1 JP 2008060696 W JP2008060696 W JP 2008060696W WO 2008153068 A1 WO2008153068 A1 WO 2008153068A1
Authority
WO
WIPO (PCT)
Prior art keywords
nitride semiconductor
semiconductor layer
type impurity
semiconductor device
manufacturing
Prior art date
Application number
PCT/JP2008/060696
Other languages
English (en)
Japanese (ja)
Inventor
Tetsuya Fujiwara
Kazuhiko Senda
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to JP2009519280A priority Critical patent/JP5579435B2/ja
Publication of WO2008153068A1 publication Critical patent/WO2008153068A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)

Abstract

Selon l'invention, le rendement d'émission de lumière est amélioré par réduction de l'endommagement thermique d'une couche active (3) par la formation d'une couche semi-conductrice de type p (4) à une basse température et par la réduction d'une tension dans le sens direct (Vf). Un dispositif semi-conducteur au nitrure comporte une couche active (3) composée d'un puits multiquantique contenant de l'indium ; une première couche semi-conductrice au nitrure (41) contenant une impureté de type p ; une seconde couche semi-conductrice au nitrure (42) contenant une impureté de type p à une concentration inférieure à celle de l'impureté de type p dans la première couche semi-conductrice au nitrure (41) ; une troisième couche semi-conductrice au nitrure (43) contenant une impureté de type p à une concentration supérieure à celle de l'impureté de type p dans la seconde couche semi-conductrice au nitrure (42) ; et une quatrième couche conductrice au nitrure (44) contenant une impureté de type p à une concentration inférieure à celle de l'impureté de type p dans la troisième couche semi-conductrice au nitrure (43). Dans un procédé pour fabriquer un tel dispositif semi-conducteur au nitrure, un matériau gazeux est amené par un gaz porteur ne contenant pas d'hydrogène, et au moins une partie de la première couche semi-conductrice au nitrure (41) à la quatrième couche semi-conductrice au nitrure (44) est formée.
PCT/JP2008/060696 2007-06-15 2008-06-11 Dispositif semi-conducteur au nitrure et son procédé de fabrication WO2008153068A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009519280A JP5579435B2 (ja) 2007-06-15 2008-06-11 窒化物系半導体装置およびその製造方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007-158557 2007-06-15
JP2007-158567 2007-06-15
JP2007158567 2007-06-15
JP2007158557 2007-06-15
JP2007-238048 2007-09-13
JP2007238048 2007-09-13

Publications (1)

Publication Number Publication Date
WO2008153068A1 true WO2008153068A1 (fr) 2008-12-18

Family

ID=40129673

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060696 WO2008153068A1 (fr) 2007-06-15 2008-06-11 Dispositif semi-conducteur au nitrure et son procédé de fabrication

Country Status (3)

Country Link
JP (1) JP5579435B2 (fr)
TW (1) TW200905931A (fr)
WO (1) WO2008153068A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2012063735A1 (ja) * 2010-11-09 2014-05-12 株式会社ニコン カーボン薄膜、光学素子成形用金型及び光学素子の製造方法
WO2016092822A1 (fr) * 2014-12-08 2016-06-16 Ｄｏｗａエレクトロニクス株式会社 Procédé de fabrication d'élément électroluminescent à semi-conducteurs au nitrure du groupe iii
JP2016111370A (ja) * 2014-12-08 2016-06-20 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法およびｉｉｉ族窒化物半導体発光素子
JP2016111235A (ja) * 2014-12-08 2016-06-20 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法およびｉｉｉ族窒化物半導体発光素子
JP2019040962A (ja) * 2017-08-23 2019-03-14 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7741131B2 (en) * 2007-05-25 2010-06-22 Electro Scientific Industries, Inc. Laser processing of light reflective multilayer target structure
TWI420696B (zh) * 2009-11-19 2013-12-21 Epistar Corp 發光元件及其製造方法
KR101734558B1 (ko) 2011-02-28 2017-05-11 엘지이노텍 주식회사 발광 소자

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09153642A (ja) * 1995-09-29 1997-06-10 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2000307149A (ja) * 1999-04-21 2000-11-02 Nichia Chem Ind Ltd 窒化物半導体素子
JP2002026388A (ja) * 2000-07-06 2002-01-25 Nichia Chem Ind Ltd 端面発光型発光素子
JP2002319702A (ja) * 2001-04-19 2002-10-31 Sony Corp 窒化物半導体素子の製造方法、窒化物半導体素子
JP2004087930A (ja) * 2002-08-28 2004-03-18 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2006120856A (ja) * 2004-10-21 2006-05-11 Hitachi Cable Ltd 半導体発光素子の製造方法
JP2007134415A (ja) * 2005-11-08 2007-05-31 Rohm Co Ltd 窒化物半導体発光素子及び窒化物半導体発光素子製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4457826B2 (ja) * 2004-09-22 2010-04-28 三菱化学株式会社 窒化物半導体を用いた発光ダイオード

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09153642A (ja) * 1995-09-29 1997-06-10 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2000307149A (ja) * 1999-04-21 2000-11-02 Nichia Chem Ind Ltd 窒化物半導体素子
JP2002026388A (ja) * 2000-07-06 2002-01-25 Nichia Chem Ind Ltd 端面発光型発光素子
JP2002319702A (ja) * 2001-04-19 2002-10-31 Sony Corp 窒化物半導体素子の製造方法、窒化物半導体素子
JP2004087930A (ja) * 2002-08-28 2004-03-18 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2006120856A (ja) * 2004-10-21 2006-05-11 Hitachi Cable Ltd 半導体発光素子の製造方法
JP2007134415A (ja) * 2005-11-08 2007-05-31 Rohm Co Ltd 窒化物半導体発光素子及び窒化物半導体発光素子製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2012063735A1 (ja) * 2010-11-09 2014-05-12 株式会社ニコン カーボン薄膜、光学素子成形用金型及び光学素子の製造方法
WO2016092822A1 (fr) * 2014-12-08 2016-06-16 Ｄｏｗａエレクトロニクス株式会社 Procédé de fabrication d'élément électroluminescent à semi-conducteurs au nitrure du groupe iii
JP2016111370A (ja) * 2014-12-08 2016-06-20 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法およびｉｉｉ族窒化物半導体発光素子
JP2016111235A (ja) * 2014-12-08 2016-06-20 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法およびｉｉｉ族窒化物半導体発光素子
CN107004745A (zh) * 2014-12-08 2017-08-01 同和电子科技有限公司 第iii族氮化物半导体发光器件的制造方法
US10147842B2 (en) 2014-12-08 2018-12-04 Dowa Electronics Materials Co., Ltd. Method of producing III nitride semiconductor light-emitting device
CN107004745B (zh) * 2014-12-08 2019-03-08 同和电子科技有限公司 第iii族氮化物半导体发光器件的制造方法
US10283671B2 (en) 2014-12-08 2019-05-07 Dowa Electronics Materials Co., Ltd. Method of producing III nitride semiconductor light-emitting device
JP2019040962A (ja) * 2017-08-23 2019-03-14 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法

Also Published As

Publication number Publication date
JPWO2008153068A1 (ja) 2010-08-26
TW200905931A (en) 2009-02-01
JP5579435B2 (ja) 2014-08-27

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