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WO2008155379A3 - Transistor a effet de champ a contacts electriques alternes - Google Patents

Transistor a effet de champ a contacts electriques alternes Download PDF

Info

Publication number
WO2008155379A3
WO2008155379A3 PCT/EP2008/057773 EP2008057773W WO2008155379A3 WO 2008155379 A3 WO2008155379 A3 WO 2008155379A3 EP 2008057773 W EP2008057773 W EP 2008057773W WO 2008155379 A3 WO2008155379 A3 WO 2008155379A3
Authority
WO
WIPO (PCT)
Prior art keywords
gates
face
field effect
effect transistor
support layer
Prior art date
Application number
PCT/EP2008/057773
Other languages
English (en)
Other versions
WO2008155379A2 (fr
Inventor
Frederic Mayer
Laurent Clavelier
Thierry Poiroux
Gerard Billiot
Original Assignee
Commissariat Energie Atomique
Frederic Mayer
Laurent Clavelier
Thierry Poiroux
Gerard Billiot
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Frederic Mayer, Laurent Clavelier, Thierry Poiroux, Gerard Billiot filed Critical Commissariat Energie Atomique
Priority to US12/665,463 priority Critical patent/US8866225B2/en
Publication of WO2008155379A2 publication Critical patent/WO2008155379A2/fr
Publication of WO2008155379A3 publication Critical patent/WO2008155379A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6215—Fin field-effect transistors [FinFET] having multiple independently-addressable gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6219—Fin field-effect transistors [FinFET] characterised by the source or drain electrodes

Landscapes

  • Thin Film Transistor (AREA)

Abstract

Transistor a effet de champ (100) comportant : - une couche support (104), - une pluralité de zones actives (106) a base de semi-conducteur, chaque zone active étant destinée a former un canal et disposée entre deux grilles (112) situées l'une a cote de l'autre consécutivement, les zones actives et les grilles étant disposées sur Ia couche support, chaque grille comportant une première face du cote de Ia couche support et une seconde face opposée a Ia première face, - Ia seconde face d'une première des deux grilles étant reliée électriquement a un premier contact électrique (118, 122, 124) réalisé sur Ia seconde face de ladite première des deux grilles, et Ia première face d'une seconde des deux grilles étant reliée électriquement a un second contact électrique (118, 130, 132) traversant Ia couche support, les grilles du transistor n'étant pas reliées électriquement entre elles.
PCT/EP2008/057773 2007-06-21 2008-06-19 Transistor a effet de champ a contacts electriques alternes WO2008155379A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/665,463 US8866225B2 (en) 2007-06-21 2008-06-19 Field effect transistor with alternate electrical contacts

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0755936 2007-06-21
FR0755936A FR2917896B1 (fr) 2007-06-21 2007-06-21 Transistor a effet de champ a contacts electriques alternes.

Publications (2)

Publication Number Publication Date
WO2008155379A2 WO2008155379A2 (fr) 2008-12-24
WO2008155379A3 true WO2008155379A3 (fr) 2009-04-09

Family

ID=39052755

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/057773 WO2008155379A2 (fr) 2007-06-21 2008-06-19 Transistor a effet de champ a contacts electriques alternes

Country Status (3)

Country Link
US (1) US8866225B2 (fr)
FR (1) FR2917896B1 (fr)
WO (1) WO2008155379A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8969154B2 (en) * 2011-08-23 2015-03-03 Micron Technology, Inc. Methods for fabricating semiconductor device structures and arrays of vertical transistor devices
US9293584B2 (en) * 2011-11-02 2016-03-22 Broadcom Corporation FinFET devices
US20140106529A1 (en) * 2012-10-16 2014-04-17 Stmicroelectronics (Crolles 2) Sas Finfet device with silicided source-drain regions and method of making same using a two step anneal
US9136343B2 (en) * 2013-01-24 2015-09-15 Intel Corporation Deep gate-all-around semiconductor device having germanium or group III-V active layer
KR102255174B1 (ko) 2014-10-10 2021-05-24 삼성전자주식회사 활성 영역을 갖는 반도체 소자 및 그 형성 방법
US9627411B2 (en) * 2015-06-05 2017-04-18 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional transistor and methods of manufacturing thereof
KR102323943B1 (ko) 2015-10-21 2021-11-08 삼성전자주식회사 반도체 장치 제조 방법
US9954050B1 (en) * 2016-10-24 2018-04-24 International Business Machines Corporation Precise/designable FinFET resistor structure
CN110416296B (zh) * 2018-04-26 2021-03-26 苏州能讯高能半导体有限公司 半导体器件、半导体芯片及半导体器件制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6765303B1 (en) * 2003-05-06 2004-07-20 Advanced Micro Devices, Inc. FinFET-based SRAM cell
US20050073005A1 (en) * 2003-10-07 2005-04-07 International Business Machines Corporation High-density split-gate finfet
US7087966B1 (en) * 2005-05-18 2006-08-08 International Business Machines Corporation Double-Gate FETs (field effect transistors)
WO2006087798A1 (fr) * 2005-02-18 2006-08-24 Fujitsu Limited Matrice d’elements de stockage, procede de fabrication de cette matrice et dispositif de stockage a semi-conducteur utilisant cette matrice d’elements de stockage
US7102181B1 (en) * 2005-04-22 2006-09-05 International Business Machines Corporation Structure and method for dual-gate FET with SOI substrate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5260233A (en) 1992-11-06 1993-11-09 International Business Machines Corporation Semiconductor device and wafer structure having a planar buried interconnect by wafer bonding
US6759282B2 (en) 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
US7163851B2 (en) * 2002-08-26 2007-01-16 International Business Machines Corporation Concurrent Fin-FET and thick-body device fabrication
FR2845522A1 (fr) 2002-10-03 2004-04-09 St Microelectronics Sa Circuit integre a couche enterree fortement conductrice
EP1569273A3 (fr) 2003-07-30 2005-09-14 St Microelectronics S.A. Lignes conductrices enterrées dans des zones d'isolement
US7365398B2 (en) 2004-02-11 2008-04-29 Cornell Research Foundation, Inc. Compact SRAMs and other multiple transistor structures
JP4762060B2 (ja) * 2006-06-13 2011-08-31 株式会社東芝 半導体記憶装置およびその製造方法
JP2008010503A (ja) * 2006-06-27 2008-01-17 Toshiba Corp 半導体記憶装置およびその製造方法
FR2910704A1 (fr) 2007-04-05 2008-06-27 Commissariat Energie Atomique Procede de realisation d'un dispositif a circuit integre interconnecte

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6765303B1 (en) * 2003-05-06 2004-07-20 Advanced Micro Devices, Inc. FinFET-based SRAM cell
US20050073005A1 (en) * 2003-10-07 2005-04-07 International Business Machines Corporation High-density split-gate finfet
WO2006087798A1 (fr) * 2005-02-18 2006-08-24 Fujitsu Limited Matrice d’elements de stockage, procede de fabrication de cette matrice et dispositif de stockage a semi-conducteur utilisant cette matrice d’elements de stockage
US7102181B1 (en) * 2005-04-22 2006-09-05 International Business Machines Corporation Structure and method for dual-gate FET with SOI substrate
US7087966B1 (en) * 2005-05-18 2006-08-08 International Business Machines Corporation Double-Gate FETs (field effect transistors)

Also Published As

Publication number Publication date
US20100155843A1 (en) 2010-06-24
FR2917896A1 (fr) 2008-12-26
US8866225B2 (en) 2014-10-21
FR2917896B1 (fr) 2009-11-06
WO2008155379A2 (fr) 2008-12-24

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