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WO2008101367A1 - Structure d'intégration magnétique - Google Patents

Structure d'intégration magnétique Download PDF

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Publication number
WO2008101367A1
WO2008101367A1 PCT/CN2007/000592 CN2007000592W WO2008101367A1 WO 2008101367 A1 WO2008101367 A1 WO 2008101367A1 CN 2007000592 W CN2007000592 W CN 2007000592W WO 2008101367 A1 WO2008101367 A1 WO 2008101367A1
Authority
WO
WIPO (PCT)
Prior art keywords
transformer
parameter
resonant
llc resonant
resonant converter
Prior art date
Application number
PCT/CN2007/000592
Other languages
English (en)
Inventor
Yanjun Zhang
Dehong Xu
Kazuaki Mino
Kiyoaki Sasagawa
Original Assignee
Zhejiang University
Fuji Electric Systems Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang University, Fuji Electric Systems Co., Ltd. filed Critical Zhejiang University
Priority to PCT/CN2007/000592 priority Critical patent/WO2008101367A1/fr
Priority to CN200710186467XA priority patent/CN101308724B/zh
Priority to JP2008033779A priority patent/JP2008205466A/ja
Priority to US12/033,888 priority patent/US20080224809A1/en
Publication of WO2008101367A1 publication Critical patent/WO2008101367A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F29/00—Variable transformers or inductances not covered by group H01F21/00
    • H01F29/14—Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias
    • H01F29/146—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F38/00—Adaptations of transformers or inductances for specific applications or functions
    • H01F38/02—Adaptations of transformers or inductances for specific applications or functions for non-linear operation
    • H01F38/023—Adaptations of transformers or inductances for specific applications or functions for non-linear operation of inductances
    • H01F2038/026—Adaptations of transformers or inductances for specific applications or functions for non-linear operation of inductances non-linear inductive arrangements for converters, e.g. with additional windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/38—Auxiliary core members; Auxiliary coils or windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F3/00—Cores, Yokes, or armatures
    • H01F3/10—Composite arrangements of magnetic circuits
    • H01F3/12—Magnetic shunt paths
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0064—Magnetic structures combining different functions, e.g. storage, filtering or transformation
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
    • H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
    • H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC

Definitions

  • the present invention relates to a magnetic integration structure, especially to 1 MHz-IkW LLC resonant converter with integrated magnetics.
  • LLC resonant converter can avoid both of these two problems. It has higher conversion efficiency at higher input voltage [3-4], which makes it an excellent candidate for the front end dc-dc converter. And if it is properly designed, LLC resonant converter can realize the ZCS OFF of the rectification diodes, which eliminates the reverse recovery of rectification diodes and improves efficiency. Another advantage of LLC resonant converter is the ZVS ON of the main switches, so that the converter can work at higher switching frequency and the power density is increased.
  • LLC resonant converter There are three magnetic components in LLC resonant converter: resonant inductor, parallel inductor and transformer. All the magnetic components can be integrated together [4-10]. Therefore, the power density of LLC resonant converter can be further increased.
  • Magnetic integration structure wherein the window area for the transformer is larger than the window area for the resonant inductance.
  • FIG. 1 is LLC resonant converter
  • Figure 2 is DC voltage gain curve of LLC resonant converter
  • Figure 3 is DC voltage gain of LLC resonant converter when parameter k is variable and parameter Q is constant;
  • Figure 4 is power factor angle curve when parameter k is variable and parameter Q is constant;
  • Figure 5 is DC voltage gain of LLC resonant converter when parameter k is constant and parameter Q is variable;
  • Figure 6 is power factor angle curve when parameter k is constant and parameter Q is variable
  • Figure 7 is some main waveforms of LLC resonant converter
  • Figure 8 is equivalent circuit of LLC resonant converter in half switching cycle
  • Figure 9 is the loss breakdown of LLC resonant converter
  • Figure 10 is forward voltage comparison of two different rectification diodes
  • Figure 11 is efficiency improvement when schottky diode is used to replace fast recovery diode
  • Figure 12 is the first presented integrated magnetic structure and its corresponding magnetic circuit model
  • Figure 13 is the second presented integrated magnetic structure and its corresponding magnetic circuit model
  • Figure 14 is the proposed magnetic integration structure
  • Figure 15 is practical integrated magnetic structure
  • Figure 16 is prototype of IMHz- IKW LLC resonant converter
  • Figure 17 is the resonant tank voltage V ab and the resonant current i p , v a b: 100V/div, i p : 20A/div, t: 500ns/div;
  • Figure 18 is the voltage on the rectification diodes, V DI : 50V/div, V D2 : 50V/div, t: 500ns/div;
  • Figure 19 is efficiency of LLC resonant converter
  • Figure 20 is switching frequency of LLC resonant converter.
  • T, k is defined as the ratio of parallel inductance to series inductance L * , f s is the l
  • ⁇ : series resonant frequency and is defined as J ' , f is the switching frequency
  • the converter In the design we expect the converter to operate higher than the frequency f s i and lower than the series resonant frequency f s .
  • the frequency f s] is defined as # This is because when LLC resonant converter works in this region, the following excellent characteristic can be gained
  • circuit parameters can be expressed as another set of parameters: n, f s , k and Q, and design according to this set of parameters is more general and meaningful. Therefore, we'll firstly discuss the selection principles for the parameters n, f s , k and Q. After these parameters are decided the circuit parameters are also decided.
  • Vj n _max is the maximum input voltage 400V.
  • transformer turn ratio 8.5:2:2.
  • the switching frequency is below the series resonant frequency f s .
  • the switching frequency of LLC resonant converter is required to be around IMHz, we should choose the series resonant frequency f s to be a little bit larger than IMHz.
  • the series resonant frequency f s to be 1.1MHz.
  • Power factor angle is defined as the angle between the input voltage and the input current of the resonant tank. With a larger power factor angle the reactive power flowing into the resonant tank is increased so that the efficiency is impaired. Power factor angle can be expressed as
  • the circuit parameters can be calculated as Transformer turn ratio : 8.5 : 2 : 2 Resonant inductor Ls: 1.78uH Resonant capacitdr Cs: 11.8nF Parallel inductor Lp: 17.8uH.
  • v a b is the voltage applied to the resonant tank
  • i p and i LP are the current flowing through the resonant tank and the parallel inductor respectively
  • ioi and ⁇ D2 are the current flowing through the rectification diodes
  • v c is the voltage across the resonant capacitor.
  • the following current values must be derived firstly: (1) the rms value of the current flowing through the resonant tank, (2) the rms value of the current flowing through the transformer primary side, (3) the rms value of the current flowing through the transformer secondary side.
  • FIG. 7 Some main waveforms of LLC resonant converter Since the waveforms in Fig.7 are symmetric in a switching cycle, analyzing them in half a switching cycle is enough. In half a switching cycle (neglecting the switching process), the operation of LLC resonant converter can be divided into two stages [3-4]. The equivalent circuits of the two stages are shown in Fig.8 (a) and (b) respectively.
  • nV L, dt O)
  • V 1n is the input voltage
  • v c (t) is the voltage across the resonant capacitor
  • L s is the resonant inductor
  • i p (t) is the current flowing through the resonant tank
  • n is the transformer turn ratio
  • V 0 is the output voltage
  • C s is the resonant capacitor
  • L p is the parallel inductor
  • iLp(t) is the current flowing through it.
  • the initial value of i p (t), v c (t) and ⁇ LP (t) is given as nV.
  • ⁇ s is the angle frequency and is defined as 9 .
  • the parallel inductor is integrated with the transformer by utilizing the magnetizing inductance, the losses of the parallel inductor and transformer are analyzed together.
  • Q g is the gate charge of the main MOSFET
  • V gs is the gate drive voltage
  • f is the switching frequency
  • I o ff is the current through the main MOSFET when it is turned off and I Of r is equal nV a A f L to * " , tf is the fall time of the main MOSFET, f is the switching frequency, C 0Ss is the output capacitance of the main MOSFET.
  • C m , ⁇ , ⁇ are some empirical parameters related to the magnetic material
  • f is the switching frequency
  • 5 Ls is the maximum flux density
  • V e _Ls is the volume of the resonant inductor magnetic core.
  • Equation (18) where l pjms is the rms value of the resonant current i p and is given in equation (18), R- Ls _ac is the ac resistance of resonant inductor winding and can be measured through an impedance analyzer.
  • C m , ⁇ , ⁇ are some empirical parameters related to the magnetic material
  • f eq is the equivalent frequency and is defined as [12]
  • x is the maximum flux density
  • f is the switching frequency
  • V e _ ⁇ is the volume of the transformer magnetic core.
  • I p rm s is the rms value of the resonant current i p and is given in equation (18)
  • R Pr i_ac is the ac resistance of transformer primary winding and can be measured
  • I sec _rms is the rms value of the current through transformer secondary side and given in equation (20)
  • R sec ac is the ac resistance of transformer secondary winding and also can be measured through an impedance analyzer.
  • V F is the forward voltage drop of the rectification diodes
  • I D _ ⁇ S is the rms value of the current through the rectification diodes
  • I D _ ⁇ S is equal to I se c_rm s -
  • the parallel inductor L p and transformer T can be integrated together by inserting an air gap into the transformer magnetic core and reducing the magnetizing inductance to the parallel inductance [4,9].
  • the transformer leakage inductor As the resonant inductor [6-10].
  • the transformer inherent leakage inductance is smaller than the needed resonant inductance. Therefore the transformer leakage inductance is increased by inserting a "leakage layer" between the primary winding and secondary winding.
  • the material for the leakage layer is usually low permeability magnetic material, such as C302 (EPCOS) etc.
  • the presented structure 1 is to build the transformer windings on the left outer leg and build the resonant inductor winding on the right outer leg of the magnetic core. There are air gaps on both the outer legs and no air gap on the center leg. Therefore the fluxes generated by the transformer and the resonant inductor are short-circuited through the center leg. And the fluxes on the center leg can be cancelled.
  • the advantage of structure 1 is that the window area for transformer winding is the same as the discrete transformer.
  • the disadvantage is that the flux density on the left outer leg is doubled compared to the discrete transformer because the cross sectional area of the left outer leg is only half of the center leg. Therefore the magnetic core loss is increased.
  • Another disadvantage of structure 1 is that it's mechanical unstable [4-5].
  • the presented structure2 and its corresponding magnetic circuit model are shown in Fig. 13.
  • the advantage of structure2 is that the flux density for the transformer is the same as the discrete transformer, so that the transformer magnetic core loss is not increased. Another benefit is that it's a mechanical stable structure because the air gap is on all the legs.
  • the disadvantage of structure 2 is the decreased window area for transformer winding so that the transformer copper loss may increase.
  • the proposed magnetic integration structure is shown in Fig. 14. It's derived from the second structure as shown in Fig. 13 (a). But the window area for the transformer winding is increased so that the transformer copper loss increase is no so much as structure2.
  • the resonant inductance is only 1.78uH.
  • the Ansoft PEMage simulation result for the resonant inductance is 2.12uH. Because we need only three turns to realize the resonant inductor, the decrease of the window area for the resonant inductor is not a problem.
  • Fig. 15 shows the practical integrated magnetic structure.
  • Fig. 17 shows the experimental waveform of the voltage applied to the resonant tank V a b and the current flowing through the resonant tank i p .
  • the operation condition is: input voltage 400V 5 output 48V/20A, switching frequency 875 KHz. From Fig. 17 we can find that the experimental waveform corresponds well with the theoretical waveform shown in Fig.7.
  • Fig. 18 shows the experimental waveform of the voltage on the rectification diodes. The operation condition is the same as in Fig. 17. From Fig. 18 we can see that the waveform is clean which indicates the ZCS OFF of the rectification diodes.
  • Fig. 19 and Fig.20 shows the efficiency and switching frequency curve of LLC resonant converter. From Fig. 19 and Fig.20 we can see that the efficiency at 400V input voltage full load output is 93.95% at the switching frequency of 875 KHz.
  • Integrated magnetic structure is adopted. It can further reduce the magnetic component size and increase the power density.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

La perte de cuivre survenant lors de l'enroulement est réduite par l'élargissement de la zone d'enroulement du côté trans par rapport à la zone d'enroulement du côté inducteur.
PCT/CN2007/000592 2007-02-17 2007-02-17 Structure d'intégration magnétique WO2008101367A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/CN2007/000592 WO2008101367A1 (fr) 2007-02-17 2007-02-17 Structure d'intégration magnétique
CN200710186467XA CN101308724B (zh) 2007-02-17 2007-11-16 变压器和电感的磁集成结构
JP2008033779A JP2008205466A (ja) 2007-02-17 2008-02-14 磁気部品
US12/033,888 US20080224809A1 (en) 2007-02-17 2008-02-19 Magnetic integration structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2007/000592 WO2008101367A1 (fr) 2007-02-17 2007-02-17 Structure d'intégration magnétique

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/033,888 Continuation-In-Part US20080224809A1 (en) 2007-02-17 2008-02-19 Magnetic integration structure

Publications (1)

Publication Number Publication Date
WO2008101367A1 true WO2008101367A1 (fr) 2008-08-28

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010053620A3 (fr) * 2008-10-29 2010-08-12 General Electric Company Structure d'intégration de composants inductifs et capacitifs
CN103078472A (zh) * 2012-10-25 2013-05-01 中国船舶重工集团公司第七二三研究所 用于微波功率模块的高压电源磁性组件一体化集成方法
WO2016022966A1 (fr) * 2014-08-07 2016-02-11 The Trustees Of Dartmouth College Dispositifs magnétiques incluant des enroulements de feuilles à faible résistance c.a. et des noyaux magnétiques à entrefers
CN106783107A (zh) * 2016-11-16 2017-05-31 西安交通大学 一种混合式配电变压器解耦磁集成装置
US10003275B2 (en) 2016-11-11 2018-06-19 Texas Instruments Incorporated LLC resonant converter with integrated magnetics
US10381914B2 (en) 2017-07-19 2019-08-13 Texas Instruments Incorporated Integrated transformer
CN112687454A (zh) * 2020-12-21 2021-04-20 中南大学 一种集成漏感和激磁感的变压器磁集成结构及其集成方法
WO2022040925A1 (fr) * 2020-08-25 2022-03-03 Telefonaktiebolaget Lm Ericsson (Publ) Appareil magnétique et convertisseur de tension le comprenant
CN118299162A (zh) * 2024-03-29 2024-07-05 西安电子科技大学 一种用于提高Sigma变换器功率密度的正交磁通磁芯结构

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010053620A3 (fr) * 2008-10-29 2010-08-12 General Electric Company Structure d'intégration de composants inductifs et capacitifs
US7974069B2 (en) 2008-10-29 2011-07-05 General Electric Company Inductive and capacitive components integration structure
CN102197446A (zh) * 2008-10-29 2011-09-21 通用电气公司 电感性和电容性部件一体结构
CN103078472A (zh) * 2012-10-25 2013-05-01 中国船舶重工集团公司第七二三研究所 用于微波功率模块的高压电源磁性组件一体化集成方法
WO2016022966A1 (fr) * 2014-08-07 2016-02-11 The Trustees Of Dartmouth College Dispositifs magnétiques incluant des enroulements de feuilles à faible résistance c.a. et des noyaux magnétiques à entrefers
US10003275B2 (en) 2016-11-11 2018-06-19 Texas Instruments Incorporated LLC resonant converter with integrated magnetics
US11062836B2 (en) 2016-11-11 2021-07-13 Texas Instruments Incorporated LLC resonant convert with integrated magnetics
CN106783107A (zh) * 2016-11-16 2017-05-31 西安交通大学 一种混合式配电变压器解耦磁集成装置
CN106783107B (zh) * 2016-11-16 2018-06-26 西安交通大学 一种混合式配电变压器解耦磁集成装置
US10381914B2 (en) 2017-07-19 2019-08-13 Texas Instruments Incorporated Integrated transformer
WO2022040925A1 (fr) * 2020-08-25 2022-03-03 Telefonaktiebolaget Lm Ericsson (Publ) Appareil magnétique et convertisseur de tension le comprenant
CN112687454A (zh) * 2020-12-21 2021-04-20 中南大学 一种集成漏感和激磁感的变压器磁集成结构及其集成方法
CN112687454B (zh) * 2020-12-21 2022-08-09 中南大学 一种集成漏感和激磁感的变压器磁集成结构及其集成方法
CN118299162A (zh) * 2024-03-29 2024-07-05 西安电子科技大学 一种用于提高Sigma变换器功率密度的正交磁通磁芯结构

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