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WO2008108136A1 - スイッチング素子及びその製造方法 - Google Patents

スイッチング素子及びその製造方法 Download PDF

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Publication number
WO2008108136A1
WO2008108136A1 PCT/JP2008/052067 JP2008052067W WO2008108136A1 WO 2008108136 A1 WO2008108136 A1 WO 2008108136A1 JP 2008052067 W JP2008052067 W JP 2008052067W WO 2008108136 A1 WO2008108136 A1 WO 2008108136A1
Authority
WO
WIPO (PCT)
Prior art keywords
switching device
manufacturing
same
insulating film
gate insulating
Prior art date
Application number
PCT/JP2008/052067
Other languages
English (en)
French (fr)
Inventor
Satoru Toguchi
Masahiko Ishida
Hiroyuki Endoh
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009502486A priority Critical patent/JP5177695B2/ja
Priority to US12/529,564 priority patent/US8138501B2/en
Publication of WO2008108136A1 publication Critical patent/WO2008108136A1/ja

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • H10D62/118Nanostructure semiconductor bodies
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • H10D62/118Nanostructure semiconductor bodies
    • H10D62/119Nanowire, nanosheet or nanotube semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • H10D62/118Nanostructure semiconductor bodies
    • H10D62/119Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/484Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/464Lateral top-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/484Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/141Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221Carbon nanotubes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/701Integrated with dissimilar structures on a common substrate
    • Y10S977/708Integrated with dissimilar structures on a common substrate with distinct switching device
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/734Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742Carbon nanotubes, CNTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

 本発明のスイッチング素子は、ゲート絶縁膜と、前記ゲート絶縁膜に接して形成された活性層とを具備する。前記活性層は、カーボンナノチューブを含み、前記ゲート絶縁膜は、側鎖に芳香族環を有する非共役高分子を含んでいる。
PCT/JP2008/052067 2007-03-02 2008-02-07 スイッチング素子及びその製造方法 WO2008108136A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009502486A JP5177695B2 (ja) 2007-03-02 2008-02-07 スイッチング素子及びその製造方法
US12/529,564 US8138501B2 (en) 2007-03-02 2008-02-07 Switching element and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-053512 2007-03-02
JP2007053512 2007-03-02

Publications (1)

Publication Number Publication Date
WO2008108136A1 true WO2008108136A1 (ja) 2008-09-12

Family

ID=39738033

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052067 WO2008108136A1 (ja) 2007-03-02 2008-02-07 スイッチング素子及びその製造方法

Country Status (3)

Country Link
US (1) US8138501B2 (ja)
JP (2) JP5177695B2 (ja)
WO (1) WO2008108136A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010275178A (ja) * 2009-05-29 2010-12-09 Korea Advanced Inst Of Science & Technology カーボンナノチューブバルク素材及びその製造方法
JP2011175996A (ja) * 2010-02-23 2011-09-08 Nippon Telegr & Teleph Corp <Ntt> グラフェントランジスタおよびその製造方法
JP2011211175A (ja) * 2010-03-29 2011-10-20 Internatl Business Mach Corp <Ibm> 炭素ベース材料上の向上した結合界面を有する半導体構造体、その形成方法、及び、電子デバイス
FR2959353A1 (fr) * 2010-04-22 2011-10-28 Commissariat Energie Atomique Dispositif electronique organique comprenant une couche favorisant la segregation verticale d'un materiau carbone present dans la couche active electriquement
JP2022536853A (ja) * 2019-06-20 2022-08-19 レイセオン カンパニー 光セラミック用多層コーティング

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* Cited by examiner, † Cited by third party
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JP2012019191A (ja) * 2010-06-10 2012-01-26 Toshiba Corp 不揮発性記憶装置の製造方法
JP6061858B2 (ja) * 2010-10-07 2017-01-18 ジョージア・テック・リサーチ・コーポレーション 電界効果トランジスタおよびその製造方法
US9236494B2 (en) 2011-12-13 2016-01-12 E Ink Holdings Inc. Field effect transistor
US10389976B2 (en) 2016-02-16 2019-08-20 Sony Corporation Information processing apparatus, information processing system, and information processing method
CN108172625B (zh) * 2016-12-07 2020-09-29 清华大学 一种逻辑电路
KR102551581B1 (ko) * 2018-12-26 2023-07-04 엘지디스플레이 주식회사 이종의 절연막을 포함하는 게이트 절연막을 갖는 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치

Citations (3)

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JP2005175386A (ja) * 2003-12-15 2005-06-30 Asahi Kasei Corp 有機半導体素子
JP2005303270A (ja) * 2004-03-19 2005-10-27 Mitsubishi Chemicals Corp 電界効果トランジスタ
JP2006265534A (ja) * 2005-02-22 2006-10-05 Toray Ind Inc 重合体コンポジット

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KR100995451B1 (ko) * 2003-07-03 2010-11-18 삼성전자주식회사 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터
JP2005072569A (ja) * 2003-08-06 2005-03-17 Mitsubishi Chemicals Corp 有機電界効果トランジスタ
US7659138B2 (en) * 2003-12-26 2010-02-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an organic semiconductor element
JP2005228968A (ja) * 2004-02-13 2005-08-25 Sharp Corp 電界効果型トランジスタ、これを用いた画像表示装置及び半導体装置
JP2005347378A (ja) 2004-06-01 2005-12-15 Canon Inc ナノカーボン材料のパターン形成方法、並びに、半導体デバイス及びその製造方法
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JP2006073774A (ja) 2004-09-02 2006-03-16 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及びその製造方法
JP2006196851A (ja) * 2004-12-16 2006-07-27 Toppan Printing Co Ltd 薄膜トランジスタ及びその製造方法
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JP2005175386A (ja) * 2003-12-15 2005-06-30 Asahi Kasei Corp 有機半導体素子
JP2005303270A (ja) * 2004-03-19 2005-10-27 Mitsubishi Chemicals Corp 電界効果トランジスタ
JP2006265534A (ja) * 2005-02-22 2006-10-05 Toray Ind Inc 重合体コンポジット

Non-Patent Citations (1)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010275178A (ja) * 2009-05-29 2010-12-09 Korea Advanced Inst Of Science & Technology カーボンナノチューブバルク素材及びその製造方法
JP2011175996A (ja) * 2010-02-23 2011-09-08 Nippon Telegr & Teleph Corp <Ntt> グラフェントランジスタおよびその製造方法
JP2011211175A (ja) * 2010-03-29 2011-10-20 Internatl Business Mach Corp <Ibm> 炭素ベース材料上の向上した結合界面を有する半導体構造体、その形成方法、及び、電子デバイス
FR2959353A1 (fr) * 2010-04-22 2011-10-28 Commissariat Energie Atomique Dispositif electronique organique comprenant une couche favorisant la segregation verticale d'un materiau carbone present dans la couche active electriquement
JP2022536853A (ja) * 2019-06-20 2022-08-19 レイセオン カンパニー 光セラミック用多層コーティング
JP7382426B2 (ja) 2019-06-20 2023-11-16 レイセオン カンパニー 光セラミック用多層コーティング

Also Published As

Publication number Publication date
US20100102324A1 (en) 2010-04-29
JPWO2008108136A1 (ja) 2010-06-10
JP2013070081A (ja) 2013-04-18
JP5177695B2 (ja) 2013-04-03
US8138501B2 (en) 2012-03-20

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