[go: up one dir, main page]

WO2008123060A1 - 真空処理装置 - Google Patents

真空処理装置 Download PDF

Info

Publication number
WO2008123060A1
WO2008123060A1 PCT/JP2008/054949 JP2008054949W WO2008123060A1 WO 2008123060 A1 WO2008123060 A1 WO 2008123060A1 JP 2008054949 W JP2008054949 W JP 2008054949W WO 2008123060 A1 WO2008123060 A1 WO 2008123060A1
Authority
WO
WIPO (PCT)
Prior art keywords
vacuum processing
processing apparatus
processing chamber
space
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/054949
Other languages
English (en)
French (fr)
Inventor
Hiroshi Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP2009509031A priority Critical patent/JP4418027B2/ja
Publication of WO2008123060A1 publication Critical patent/WO2008123060A1/ja
Priority to US12/566,205 priority patent/US7780790B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32587—Triode systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

真空処理容器の内部に複数の貫通孔を有する導電性の隔壁部を設け、真空処理容器の内部空間が、隔壁部に対して対向電極となるように高周波電極が配置されたプラズマ生成空間と、基板が配置された基板処理空間と、に隔離して構成されている真空処理装置は、真空処理容器の側壁部にプラズマ生成空間と連通しているガス溜り部と、ガス溜り部と接続し、ガス溜り部にガスを導入するガス導入系と、を備える。
PCT/JP2008/054949 2007-03-28 2008-03-18 真空処理装置 Ceased WO2008123060A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009509031A JP4418027B2 (ja) 2007-03-28 2008-03-18 真空処理装置
US12/566,205 US7780790B2 (en) 2007-03-28 2009-09-24 Vacuum processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007083298 2007-03-28
JP2007-083298 2007-03-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/566,205 Continuation US7780790B2 (en) 2007-03-28 2009-09-24 Vacuum processing apparatus

Publications (1)

Publication Number Publication Date
WO2008123060A1 true WO2008123060A1 (ja) 2008-10-16

Family

ID=39830561

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054949 Ceased WO2008123060A1 (ja) 2007-03-28 2008-03-18 真空処理装置

Country Status (4)

Country Link
US (1) US7780790B2 (ja)
JP (1) JP4418027B2 (ja)
TW (1) TW200905775A (ja)
WO (1) WO2008123060A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021108378A (ja) * 2015-09-04 2021-07-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 周期的かつ選択的な材料の除去及びエッチングのための処理チャンバ

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008123060A1 (ja) * 2007-03-28 2008-10-16 Canon Anelva Corporation 真空処理装置
KR100963287B1 (ko) * 2008-02-22 2010-06-11 주식회사 유진테크 기판처리장치 및 기판처리방법
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US20140165911A1 (en) * 2012-12-14 2014-06-19 Applied Materials, Inc. Apparatus for providing plasma to a process chamber
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
JP6055575B2 (ja) * 2014-03-04 2016-12-27 キヤノンアネルバ株式会社 真空処理装置及び真空処理方法
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
JP6501493B2 (ja) * 2014-11-05 2019-04-17 東京エレクトロン株式会社 プラズマ処理装置
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10546729B2 (en) * 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10424487B2 (en) 2017-10-24 2019-09-24 Applied Materials, Inc. Atomic layer etching processes
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US12394604B2 (en) * 2020-09-11 2025-08-19 Applied Materials, Inc. Plasma source with floating electrodes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263353A (ja) * 1994-03-22 1995-10-13 Mitsubishi Electric Corp プラズマ処理装置及びプラズマ処理方法
JPH1126190A (ja) * 1997-07-04 1999-01-29 Hitachi Ltd プラズマ処理装置
JP2001164371A (ja) * 1999-12-07 2001-06-19 Nec Corp プラズマｃｖｄ装置およびプラズマｃｖｄ成膜法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2669168B2 (ja) 1991-03-29 1997-10-27 住友金属工業株式会社 マイクロ波プラズマ処理装置
US5944899A (en) * 1996-08-22 1999-08-31 Applied Materials, Inc. Inductively coupled plasma processing chamber
US6892669B2 (en) * 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
JP4151862B2 (ja) * 1998-02-26 2008-09-17 キヤノンアネルバ株式会社 Ｃｖｄ装置
JP4791637B2 (ja) * 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 Ｃｖｄ装置とこれを用いた処理方法
KR100443908B1 (ko) * 2001-10-25 2004-08-09 삼성전자주식회사 플라즈마 화학기상증착장치 및 이를 이용한나이트라이드막 형성방법
US6921556B2 (en) * 2002-04-12 2005-07-26 Asm Japan K.K. Method of film deposition using single-wafer-processing type CVD
TWI332532B (en) * 2005-11-04 2010-11-01 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
WO2008123060A1 (ja) * 2007-03-28 2008-10-16 Canon Anelva Corporation 真空処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263353A (ja) * 1994-03-22 1995-10-13 Mitsubishi Electric Corp プラズマ処理装置及びプラズマ処理方法
JPH1126190A (ja) * 1997-07-04 1999-01-29 Hitachi Ltd プラズマ処理装置
JP2001164371A (ja) * 1999-12-07 2001-06-19 Nec Corp プラズマｃｖｄ装置およびプラズマｃｖｄ成膜法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021108378A (ja) * 2015-09-04 2021-07-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 周期的かつ選択的な材料の除去及びエッチングのための処理チャンバ
JP7175339B2 (ja) 2015-09-04 2022-11-18 アプライド マテリアルズ インコーポレイテッド 周期的かつ選択的な材料の除去及びエッチングのための処理チャンバ
JP2023027054A (ja) * 2015-09-04 2023-03-01 アプライド マテリアルズ インコーポレイテッド 周期的かつ選択的な材料の除去及びエッチングのための処理チャンバ
US11728139B2 (en) 2015-09-04 2023-08-15 Applied Materials, Inc. Process chamber for cyclic and selective material removal and etching
JP7425160B2 (ja) 2015-09-04 2024-01-30 アプライド マテリアルズ インコーポレイテッド 周期的かつ選択的な材料の除去及びエッチングのための処理チャンバ

Also Published As

Publication number Publication date
JP4418027B2 (ja) 2010-02-17
US20100037821A1 (en) 2010-02-18
JPWO2008123060A1 (ja) 2010-07-15
TW200905775A (en) 2009-02-01
TWI358780B (ja) 2012-02-21
US7780790B2 (en) 2010-08-24

Similar Documents

Publication Publication Date Title
WO2008123060A1 (ja) 真空処理装置
WO2012018448A3 (en) Plasma processing chamber with dual axial gas injection and exhaust
IN2012DN00820A (ja)
WO2011068730A3 (en) Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
EP2312613A3 (en) Showerhead assembly for plasma processing chamber
WO2010068624A3 (en) Chamber shield for vacuum physical vapor deposition
WO2012118897A3 (en) Abatement and strip process chamber in a dual loadlock configuration
WO2010132585A3 (en) Vessel processing
WO2007127947A3 (en) Substrate processing chamber with dielectric barrier discharge lamp assembly
WO2010044895A3 (en) Multiple phase rf power for electrode of plasma chamber
WO2009136019A3 (fr) Dispositif et procede de traitement chimique en phase vapeur
WO2010151057A3 (en) Plasma deposition of a thin film
WO2011136982A3 (en) Methods for processing substrates in process systems having shared resources
WO2011029096A3 (en) Plasma enhanced chemical vapor deposition apparatus
EP2120254A3 (en) Plasma processing apparatus
WO2009044473A1 (ja) 高周波スパッタリング装置
WO2013154504A3 (en) Microwave plasma chemical vapour deposition apparatus
TW200943364A (en) Plasma processing apparatus
WO2010068625A3 (en) Shaped anode and anode-shield connection for vacuum physical vapor deposition
WO2012047035A3 (ko) 대칭형 유입구 및 유출구를 통해 반응가스를 공급하는 기판 처리 장치
GB2491733A (en) Heat sink with multiple vapor chambers
WO2008117832A1 (ja) 真空処理装置
WO2012036499A3 (ko) 박막 증착 장치
EP2458618A3 (en) Processing apparatus
WO2009006147A3 (en) Integrated steerability array arrangement for minimizing non-uniformity

Legal Events

Date Code Title Description
DPE2 Request for preliminary examination filed before expiration of 19th month from priority date (pct application filed from 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08722343

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009509031

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08722343

Country of ref document: EP

Kind code of ref document: A1