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WO2008139370A1 - Procédé pour la fabrication d'un dispositif optoélectronique - Google Patents

Procédé pour la fabrication d'un dispositif optoélectronique Download PDF

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Publication number
WO2008139370A1
WO2008139370A1 PCT/IB2008/051754 IB2008051754W WO2008139370A1 WO 2008139370 A1 WO2008139370 A1 WO 2008139370A1 IB 2008051754 W IB2008051754 W IB 2008051754W WO 2008139370 A1 WO2008139370 A1 WO 2008139370A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
carrier substrate
deposited
structured surface
radiation
Prior art date
Application number
PCT/IB2008/051754
Other languages
English (en)
Inventor
Herbert Lifka
Eric A. Meulenkamp
Cristina Tanase
Peter Van De Weijer
Original Assignee
Koninklijke Philips Electronics N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics N.V. filed Critical Koninklijke Philips Electronics N.V.
Publication of WO2008139370A1 publication Critical patent/WO2008139370A1/fr

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/854Arrangements for extracting light from the devices comprising scattering means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/87Light-trapping means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method for the manufacturing of an optoelectronic device.
  • the present invention also relates to an optoelectronic device manufactured by such a method.
  • Optoelectronics relates generally to electronic devices interacting with light.
  • Conventional methods for the manufacturing of optoelectronic devices include first forming an optoelectronic unit (e.g. OLED or photovoltaic unit) on a substrate, and then processing an optical structure (e.g. out- or in-coupling structure) on top of the optoelectronic unit or placing an optical structure formed on a separate carrier on top of the optoelectronic unit.
  • an optoelectronic unit e.g. OLED or photovoltaic unit
  • an optical structure e.g. out- or in-coupling structure
  • the distance between the optical structure and the actual OLED may be relatively large due to the substrate thickness, which can impair the in- or out-coupling functionality. The larger distance can also cause cross-talk. Also, problems of aligning the optical structure to the optoelectronic unit may cause low yield.
  • a method for the manufacturing of a display for instance an OLED or LCD display
  • the method comprises providing a substrate having through holes, depositing a removable layer on the substrate, depositing an etch and temperature resistant layer on the removable layer, processing a display on the etch and temperature resistant layer, and removing the removable layer by etching, namely leading an etchant through the substrate holes.
  • This method allows the substrate to be reused, reducing the manufacturing costs.
  • a special front plate of the display is required, for instance small lenses or out-coupling structures, the substrate could have the opposite shape.
  • US20060054594 fails to explicitly disclose how the display should be processed taking into account the structure of the substrate. In fact, only simple out- coupling structures can be fabricated without much extra processing this way. Also, the step of depositing an etch and temperature resistant layer is essential just to allow the subsequent processing and removal, it contributes nothing to the resulting display.
  • a method for the manufacturing of an optoelectronic device comprising the steps of: providing a substantially rigid carrier substrate having a structured surface; depositing a substrate over the carrier substrate so that the inverse of the structured surface of the carrier substrate is formed on the deposited substrate; forming at least one optoelectronic unit on the deposited substrate opposite the carrier substrate; and releasing the deposited substrate and the at least one optoelectronic unit from the carrier substrate using radiation after forming the at least one optoelectronic unit.
  • the deposited substrate becomes the main substrate of the final optoelectronic device.
  • the deposited substrate gets a structured surface (e.g. for out- or in-coupling of light) already in the step of depositing it over the carrier substrate, making subsequent structuring or addition of a separate optical structure not required.
  • releasing the carrier substrate by radiation means that no impairing through holes in the carrier substrate are required.
  • small scale structures can now be provided without extra processing.
  • the radiation release may be performed without having to provide any protection layer or the like, the provision of which could lengthen the manufacturing process, and which layer otherwise could hamper the performance of the final device or require additional measures for subsequent removal.
  • the carrier substrate can be reused, making the present method less costly compared to conventional methods.
  • the structured deposited substrate (functioning e.g. as in- or out-coupling structure) may be optically thin (e.g. no intermediate substrates or layers required), which in turn may enhance the in- or out-coupling efficiency. Further, this method allows easy manufacturing of flexible devices, since the device can be processed as if it was a rigid device due to the (subsequently released) rigid carrier substrate.
  • release by radiation is known per se, for instance from the international patent application publication no. WO2005050754, wherein the manufacturing of a display device using a planar carrier substrate and subsequent UV laser release is disclosed. This method is known as the EPLaR process (Electronics on Plastic by Laser Release).
  • a surface of the deposited substrate opposite the carrier substrate is essentially planar, for easy processing of the optoelectronic unit.
  • the planar surface facilitates processing of the optoelectronic unit using existing equipment, which in turn makes implementation of the present method inexpensive and feasible.
  • the deposited substrate is radiation release compatible, meaning that the deposited substrate and the release radiation (i.e. the radiation wavelength(s) used for release) are match so that the deposited substrate will separate from the carrier substrate upon exposure of the release radiation (e.g. UV light).
  • the deposited substrate acts as a release layer, and no separate release layer has to be provided, making the present method time and cost efficient.
  • a preferred material to be used for the release compatible deposited substrate is polyimide. Except for being UV release compatible, it may be transparent, colorless, planarising, spin-coatable, and temperature resistant, which makes it suitable for use in the present method.
  • polyimide has a refractive index similar to other components of the device, allowing an refractive index matched device, which in turn means that light typically not gets confined in some part of the device (which otherwise could hamper the device performance), but is evenly distributed in the entire device.
  • a separate release layer having substantially uniform thickness may be formed between the carrier substrate and the deposited substrate, conformal to the structured surface of the carrier substrate.
  • the separate release layer and the release radiation wavelength(s) should be matched to allow the release between the carrier substrate and the deposited substrate.
  • the conformal, equally thick release layer will not interfere with the process of passing the structure of the carrier substrate onto the overlying deposited substrate.
  • the radiation may be UV radiation, i.e. electromagnetic radiation in the ultraviolet spectrum.
  • the UV radiation is preferably produced by a laser, which may provide a short pulse of high energy UV radiation usable for the release.
  • a laser another radiation source could be used, for instance an UV lamp.
  • the structured surface of the carrier substrate comprises the inverse of an out-coupling structure.
  • the resulting structure on the deposited substrate becomes an out-coupling structure in the deposited substrate/air interface.
  • the out- coupling structure may be used for enhancing extraction of light from the optoelectronic device, which hereto for instance may comprise an organic light emitting diode (OLED), in order to enhance the overall efficiency of the optoelectronic device.
  • OLED device with an out-coupling structure (as manufactured by the present method) may for instance be about 2x more efficient than an OLED without out-coupling structures.
  • the out-coupling structure may for instance comprise or be comprised of small lenses, pyramids, a surface roughness, etc., which may be of nano- or micro scale dimensions.
  • the structured surface of the carrier substrate comprises the inverse of an in-coupling structure.
  • the resulting structure on the deposited substrate becomes an in-coupling structure in the deposited substrate/air interface.
  • the in-coupling structure may be used for enhancing introduction of light to the optoelectronic device, which hereto for instance may comprise an organic or inorganic photovoltaic cell (i.e. a solar cell), in order to enhance the overall efficiency of the optoelectronic device.
  • the optoelectronic device which hereto for instance may comprise an organic or inorganic photovoltaic cell (i.e. a solar cell), in order to enhance the overall efficiency of the optoelectronic device.
  • an anti-reflex coating is provided on the in-coupling structure of the deposited substrate, to further enhance the in-coupling of light.
  • the structured surface of the carrier substrate comprises the inverse of a light-redirecting structure.
  • the resulting structure on the deposited substrate becomes a light-redirecting structure in the deposited substrate/air interface.
  • the light-redirecting structure may for instance be adapted to change the beam shape of the light or to direct the light in a predetermined direction for e.g. 3D video or 3D television.
  • the optoelectronic device may for instance comprise a liquid crystal display (LCD) element or an OLED. Also, directional lamps can be fabricated with this method.
  • the structured surface of the carrier substrate comprises alignment structures.
  • the alignment structure may for instance be a small alignment mark, such as a cross.
  • the alignment structures will be passed on to the deposited substrate, allowing easy and accurate alignment of the optoelectronic unit on the deposited substrate, since the processing equipment may sense the alignment structure and be positioned accordingly. Easier alignment means that the manufacturing yield may be enhanced, providing a more efficient manufacturing method.
  • the alignment structures are particularly useful in case the structure of the deposited substrate is position dependent.
  • the deposited substrate may comprise scattering particles.
  • the scattering particles may be added to the material of the deposited layer before it is provided over the carrier substrate, so that the scattering particles become embedded in the deposited substrate.
  • the scattering particles may for instance enhance out-coupling of light from the deposited substrate, since the previously confined light changes angles when it strikes the scattering particles.
  • the substantially rigid carrier substrate having a structured surface is replaced by a substantially rigid carrier substrate having an essentially planar surface instead of the structured surface. This means that no structuring is passed on to the deposited substrate, which becomes essentially planar in the deposited substrate/air interface. Instead, only the scattering particles of the deposited substrate provide for the enhanced out-coupling.
  • an optoelectronic device manufactured by a method according to the firstly discussed aspect of the present invention.
  • Such an optoelectronic device may feature refractive index matched constituting components, a thin structured deposited substrate, scattering particles in the deposited substrate, small scale structuring of the deposited substrate, etc., resulting in an optoelectronic device with improved performance, as discussed in relation to the firstly described aspect of the present invention.
  • Figs. Ia-If are schematic cross-sectional side views illustrating a method for the manufacturing of an optoelectronic device according to an embodiment of the present invention.
  • Fig. 2 is a schematic side view illustrating a stage of a method for the manufacturing of an optoelectronic device according to another embodiment of the present invention.
  • Fig. 3 is a schematic side view of the resulting optoelectronic device of a method for the manufacturing of an optoelectronic device according to yet another embodiment of the present invention.
  • Fig. 4 is a schematic side view illustrating a step of a method for the manufacturing of an optoelectronic device according to still another embodiment of the present invention.
  • Figs. Ia-If are schematic cross-sectional side views illustrating a method for the manufacturing of an optoelectronic device 10 according to an embodiment of the present invention.
  • the optoelectronic device 10 in figs. Ia-If is an OLED (organic light emitting diode) device.
  • OLEDs can for instance be used in various displays (TVs, mobile devices, etc.), as a light source, etc.
  • a planar substrate 12 is provided.
  • the substrate 12 should be transparent for ultraviolet (UV) radiation, and it is preferably made of glass.
  • the structure 14 may be formed by photo/mechanical embossing or wet/dry etching combined with lithography.
  • the structure 14 should also be UV transparent, and it can for instance be made of SiO.
  • a polymer layer 20 Onto the structured surface 18, there is deposited a polymer layer 20, preferably a polyimide layer, as illustrated in fig. Ic.
  • the polyimide layer 20 may for instance be formed by spin coating the polyimide onto the structured surface 18.
  • the polyimide layer 20 is so thick that it fills the voids in the underlying structured surface 18. In this way, the inverse of the structured surface 18 is formed on the bottom surface 22 of the polyimide layer 20.
  • the top surface 24 of the polyimide layer 20 opposite the carrier substrate 16 is made planar. The polyimide will generally become this planar when it is spin coated onto the structured surface 18. If necessary, the top surface 24 of the polyimide layer 20 may be further planarised after it has been applied to the carrier substrate 16.
  • the deposited polyimide layer 20 functions as a substrate onto which an OLED unit 26 is processed (fig. Id).
  • a barrier layer 28 is processed over the planar surface 24 of the polyimide 20.
  • the barrier layer 28 may for instance be made of SiON which is refractive index matched with the rest of the device.
  • an optically corrected NONON (SiliconNitride-SiliconOxide-SiliconNitride- SiliconOxide-SiliconNitride) stack may be used, as well as other barrier stacks.
  • An OLED 30 is then processed onto the barrier layer 28, and after the fabrication of the OLED 30, the OLED 30 is encapsulated with a thin film packaging layer 32, for instance a NONON-stack as mentioned above. Finally, a topcoat 34 is applied over the packaging layer 32. Thereafter, electromagnetic radiation is applied.
  • the radiation is UV radiation, for instance from a laser. The UV radiation radiates through the UV transparent carrier substrate 16 as illustrated in fig. Ie, but not through the polyimide layer 20.
  • the UV radiation is absorbed by the polyimide layer 20, whereby the interface between the carrier substrate 16 and the polyimide layer 20 burns and the carrier substrate 16 is released from the rest of the stack, leaving the OLED device 10 comprising the OLED unit 26 (and topcoat 34) and structured polyimide layer 20.
  • polyimide is compatible with the UV release process, no dedicated release layer is necessary in this embodiment of the invention.
  • Polyimide is also advantageous in that it has a refractive index (n ⁇ l.6-1.8), which is similar, usually, to those of the other components in the device 10. This allows for an refractive index matched device, which in turn means that light typically not gets confined in some part of the device.
  • the optical structure of the bottom surface 22 of the polyimide layer 20 is preferably an out-coupling structure, in which case the structure 14 prepared in the step illustrated in fig. Ib is the inverse of the desired out- coupling structure.
  • the structure 14 prepared in the step illustrated in fig. Ib is the inverse of the desired out- coupling structure.
  • the out-coupling structures are possible, for instance pyramids, small lenses, holes, etc.
  • the out-coupling structures can be nano- or micro sized.
  • the polyimide layer may be optically thin, allowing increased out-coupling.
  • the final device 10 may be flexible, in case a thin and/or flexible polymer layer and optoelectronic unit is used.
  • the manufacturing can still be carried out as for a rigid device, since the rigid carrier substrate 16 gives stability and is only removed after the optoelectronic unit etc. has been processed.
  • an additional element 36 may optionally be applied on top of the coating 34, as illustrated in fig. If.
  • the top coating 34 is preferably a glue.
  • the additional element 36 may for instance be a glass or metal substrate, or a device e.g. a battery which can be used to power the OLED.
  • the additional element 36 may be applied before or after the release step.
  • the structured surface 18 of the carrier substrate 16 may comprise alignment structures (not shown).
  • the alignment structure may for instance be a small alignment mark, such as a cross (top view).
  • the alignment structures will be passed on to the layer 20, allowing easy alignment when processing the optoelectronic unit 26, since the processing equipment may sense the alignment structure and be positioned accordingly.
  • various other optoelectronic devices can also advantageously be manufactured by the present method.
  • the optoelectronic unit 26 may be a solar cell unit comprising an organic or inorganic photovoltaic cell.
  • the optical structure of the bottom surface 22 of the layer 20 is preferably an in-coupling structure, in which case the structure 14 prepared in the step illustrated in fig. Ib is the inverse of the desired in-coupling structure.
  • Various in-coupling structures are possible, for instance inverse pyramids, holes, hollow lenses, etc.
  • the in-coupling structures can be nano- or micro sized.
  • the bottom surface 22 interfacing with the air may be coated with an anti-reflex layer (not shown), to further enhance the in- coupling of light to the device.
  • the above optional battery 36 may be charged by the photovoltaic cell.
  • the optoelectronic unit 26 may be an LCD unit comprising an LCD element.
  • the optical structure of the bottom surface 22 of the layer 20 may be a light re-directing structure, in which case the optical structure 14 prepared in the step illustrated in fig. Ib should be the inverse of the desired light re-directing structure.
  • the light-redirecting structure may for instance be adapted to change the beam shape of the light or to direct the light in a predetermined direction.
  • fig. 2 is a schematic side view illustrating a stage of a method for the manufacturing of an optoelectronic device according to another embodiment of the present invention. The method of this embodiment is similar to the firstly described embodiment of fig.
  • a separate release layer 38 is used.
  • the release layer 38 is applied over the structured surface 18 of the carrier substrate 16 before the layer 20 is deposited.
  • the release layer 38 is interposed between the carrier substrate 16 and the layer 20, as in fig. 2, which illustrates the stack before the release process.
  • the release layer 38 should be equally thick, conformal with the structured surface 18, whereby the transfer of the structure 14 of the carrier substrate 16 to the layer 20 is not significantly affected.
  • the release layer 38 can be made of any material compatible with the UV release process. Hereto, one suitable material is amorphous silicon.
  • the release layer 38 reacts on the UV radiation, resulting in the separation of the carrier substrate 16 from the device 10.
  • the deposited layer 20 is not necessarily UV release compatible.
  • scattering particles 40 are added to the polyimide layer 20.
  • the scattering particles 40 may for instance be TiO or ZrO.
  • the scattering particles 10 should not be absorbing and have a big difference in refractive index compared to the deposited polyimide layer 20, either higher or lower.
  • the size of the scattering particles 40 can range from nano to micro scale.
  • the scattering particles 40 may for instance be added to the polymer solution before spin-coating, after which the total solution is spin-coated to form the on one side structured polyimide layer 20 with embedded scattering particles 40.
  • the resulting device 10 is illustrated in fig. 3.
  • the scattering particles 40 scatters the light originating from the OLED, which in turn enhances the out-coupling due to the changing angles of the previously confined light.
  • the surface of the layer 20 interfacing with the air can be planar instead of structured, with maintained sufficient out-coupling efficiency.
  • the above step of providing an optical structure on the planar glass plate can be omitted, which speeds up the manufacturing.
  • the layer 20 can be deposited directly onto the planar glass plate (no optical structure on the glass plate means no structuring on the overlying deposited substrate layer).
  • the method according to this embodiment comprises the steps of: providing a substantially rigid carrier substrate having an essentially planar surface (e.g. the glass substrate 12); depositing a substrate (e.g. the polyimide or other polymer layer 20) over the planar surface of the carrier substrate, the deposited substrate comprising scattering particles 40; forming at least one optoelectronic unit (e.g.
  • the release step of the present embodiment is illustrated in fig. 4.
  • the sealing and packaging of the OLED in fig. 1 is provided as an example.
  • Other or no sealing or packaging in the various optoelectronic units is envisaged.
  • various combinations of the above embodiments are possible.
  • the scattering particles (figs. 3 and 4) can be combined with the separate release layer (fig. 2).
  • several optoelectronic devices can be manufactured on a single carrier substrate.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention porte sur un procédé pour la fabrication d'un dispositif optoélectronique (10). Le procédé comprend les étapes consistant à fournir un substrat de support sensiblement rigide (16) ayant une surface structurée (18) ; déposer un substrat (20) sur la surface structurée (18) du substrat de support (16) de telle sorte que l'inverse de la surface structurée (18) est formée sur le substrat déposé (20) ; former au moins une unité optoélectronique (26) sur le substrat déposé (20) opposé au substrat de support (16) ; et libérer le substrat déposé (20) et la au moins une unité optoélectronique (26) du substrat de support (16) à l'aide d'un rayonnement après la formation de la au moins une unité optoélectronique (26). La présente invention porte également sur un dispositif optoélectronique (10) fabriqué par un tel procédé.
PCT/IB2008/051754 2007-05-10 2008-05-06 Procédé pour la fabrication d'un dispositif optoélectronique WO2008139370A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07107920.6 2007-05-10
EP07107920 2007-05-10

Publications (1)

Publication Number Publication Date
WO2008139370A1 true WO2008139370A1 (fr) 2008-11-20

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WO (1) WO2008139370A1 (fr)

Cited By (14)

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WO2009102201A1 (fr) * 2008-02-15 2009-08-20 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Dispositif électronique encapsulé et son procédé de fabrication
WO2010032651A1 (fr) 2008-09-22 2010-03-25 Fujifilm Corporation Dispositif électroluminescent, procédé de fabrication associé, et afficheur contenant ce dispositif
US20110254440A1 (en) * 2009-01-07 2011-10-20 Kiyoshi Minoura Organic electroluminescence display device and method for producing the same
EP2495783A1 (fr) * 2011-03-01 2012-09-05 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Dispositif électroluminescent et son procédé de fabrication
CN103531723A (zh) * 2013-03-22 2014-01-22 Tcl集团股份有限公司 柔性显示器的制备方法及用于制作柔性显示器的基板
CN103531722A (zh) * 2012-12-24 2014-01-22 Tcl集团股份有限公司 一种柔性显示器的制备方法
US20150090960A1 (en) * 2013-09-30 2015-04-02 Universal Display Corporation Methods to Fabricate Flexible OLED Lighting Devices
US20150179987A1 (en) * 2013-09-30 2015-06-25 Universal Display Corporation Novel substrate and process for high efficiency oled devices
WO2016016331A1 (fr) * 2014-08-01 2016-02-04 Osram Oled Gmbh Composant optoélectronique et procédé de fabrication d'un composant optoélectronique
JP2016111016A (ja) * 2014-12-03 2016-06-20 ユニバーサル ディスプレイ コーポレイション Oledの作製方法
EP3067952A1 (fr) * 2015-03-06 2016-09-14 Universal Display Corporation Nouveau substrat et procédé de dispositifs oled à haute efficacité
US9496522B2 (en) 2013-12-13 2016-11-15 Universal Display Corporation OLED optically coupled to curved substrate
EP3016090A4 (fr) * 2013-12-04 2017-03-15 LG Chem, Ltd. Procédé de fabrication de substrat pour dispositif électronique organique
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TWI630742B (zh) * 2016-09-14 2018-07-21 財團法人工業技術研究院 可撓性有機發光二極體的結構及其製造方法

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Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009102201A1 (fr) * 2008-02-15 2009-08-20 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Dispositif électronique encapsulé et son procédé de fabrication
WO2010032651A1 (fr) 2008-09-22 2010-03-25 Fujifilm Corporation Dispositif électroluminescent, procédé de fabrication associé, et afficheur contenant ce dispositif
EP2356880A4 (fr) * 2008-09-22 2012-09-05 Fujifilm Corp Dispositif électroluminescent, procédé de fabrication associé, et afficheur contenant ce dispositif
US20110254440A1 (en) * 2009-01-07 2011-10-20 Kiyoshi Minoura Organic electroluminescence display device and method for producing the same
EP2495783A1 (fr) * 2011-03-01 2012-09-05 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Dispositif électroluminescent et son procédé de fabrication
WO2012118375A1 (fr) * 2011-03-01 2012-09-07 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Dispositif électroluminescent et son procédé de fabrication
US9196868B2 (en) 2011-03-01 2015-11-24 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Organic light-emitting device with nano-structured light extraction layer and method of manufacturing the same
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CN103531722B (zh) * 2012-12-24 2016-01-20 Tcl集团股份有限公司 一种柔性显示器的制备方法
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