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WO2008139815A1 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
WO2008139815A1
WO2008139815A1 PCT/JP2008/057305 JP2008057305W WO2008139815A1 WO 2008139815 A1 WO2008139815 A1 WO 2008139815A1 JP 2008057305 W JP2008057305 W JP 2008057305W WO 2008139815 A1 WO2008139815 A1 WO 2008139815A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
region
silicide
film
element separating
Prior art date
Application number
PCT/JP2008/057305
Other languages
English (en)
French (fr)
Inventor
Masayasu Tanaka
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009514042A priority Critical patent/JPWO2008139815A1/ja
Priority to US12/599,706 priority patent/US8053860B2/en
Publication of WO2008139815A1 publication Critical patent/WO2008139815A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)

Abstract

　素子分離領域上の余剰のメタル膜が、ソース・ドレイン拡散層領域端のシリサイド反応に寄与することを防止し、均一な膜厚のシリサイド膜を形成する。 　少なくとも表面にシリコン層を有する基板１に素子分離領域３を形成し、前記素子分離領域３に第一の絶縁体を埋め込む工程と、上記第一の絶縁体の上面の高さを上記基板１の上面の高さよりも低くせしめ、上記素子分離領域３の側壁に側壁膜１０を形成する工程と、上記基板１上にメタル膜１１を堆積した後、熱処理によりシリサイド化する工程とを順次為す。
PCT/JP2008/057305 2007-05-11 2008-04-14 半導体装置及びその製造方法 WO2008139815A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009514042A JPWO2008139815A1 (ja) 2007-05-11 2008-04-14 半導体装置及びその製造方法
US12/599,706 US8053860B2 (en) 2007-05-11 2008-04-14 Semiconductor device and manufacturing method of the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007126803 2007-05-11
JP2007-126803 2007-05-11

Publications (1)

Publication Number Publication Date
WO2008139815A1 true WO2008139815A1 (ja) 2008-11-20

Family

ID=40002035

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057305 WO2008139815A1 (ja) 2007-05-11 2008-04-14 半導体装置及びその製造方法

Country Status (3)

Country Link
US (1) US8053860B2 (ja)
JP (1) JPWO2008139815A1 (ja)
WO (1) WO2008139815A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009027131A (ja) * 2007-06-20 2009-02-05 Toshiba Corp 半導体装置およびその製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012256785A (ja) * 2011-06-10 2012-12-27 Elpida Memory Inc 半導体装置及びその製造方法
CN103280453B (zh) * 2013-05-30 2017-02-08 江苏捷捷微电子股份有限公司 用金属铝膜实现对通隔离扩散的晶闸管芯片及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233371A (ja) * 1997-02-19 1998-09-02 Sony Corp 半導体装置の製造方法
JPH11177084A (ja) * 1997-12-05 1999-07-02 Toshiba Corp 半導体装置およびその製造方法
JPH11214688A (ja) * 1997-11-20 1999-08-06 Nec Corp 半導体装置およびその製造方法
JPH11312804A (ja) * 1998-04-28 1999-11-09 Sony Corp 半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3802530B2 (ja) 2003-12-12 2006-07-26 株式会社東芝 半導体装置及びその製造方法
US7190036B2 (en) * 2004-12-03 2007-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor mobility improvement by adjusting stress in shallow trench isolation
US7892905B2 (en) * 2005-08-02 2011-02-22 Globalfoundries Singapore Pte. Ltd. Formation of strained Si channel and Si1-xGex source/drain structures using laser annealing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233371A (ja) * 1997-02-19 1998-09-02 Sony Corp 半導体装置の製造方法
JPH11214688A (ja) * 1997-11-20 1999-08-06 Nec Corp 半導体装置およびその製造方法
JPH11177084A (ja) * 1997-12-05 1999-07-02 Toshiba Corp 半導体装置およびその製造方法
JPH11312804A (ja) * 1998-04-28 1999-11-09 Sony Corp 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009027131A (ja) * 2007-06-20 2009-02-05 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US8053860B2 (en) 2011-11-08
JPWO2008139815A1 (ja) 2010-07-29
US20100219499A1 (en) 2010-09-02

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