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WO2009041365A1 - 有機トランジスタとその製造方法 - Google Patents

有機トランジスタとその製造方法 Download PDF

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Publication number
WO2009041365A1
WO2009041365A1 PCT/JP2008/067004 JP2008067004W WO2009041365A1 WO 2009041365 A1 WO2009041365 A1 WO 2009041365A1 JP 2008067004 W JP2008067004 W JP 2008067004W WO 2009041365 A1 WO2009041365 A1 WO 2009041365A1
Authority
WO
WIPO (PCT)
Prior art keywords
covalent bond
gate electrode
insulating layer
organic transistor
gate insulating
Prior art date
Application number
PCT/JP2008/067004
Other languages
English (en)
French (fr)
Inventor
Masakazu Kamura
Shigeru Aomori
Yasutaka Kuzumoto
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to JP2009534306A priority Critical patent/JP5070292B2/ja
Priority to US12/680,413 priority patent/US8178871B2/en
Publication of WO2009041365A1 publication Critical patent/WO2009041365A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)

Abstract

　低閾値電圧の有機トランジスタにおいて、ゲート絶縁層のピンホールが生じ易く、穏和な条件で、ピンホールを塞ぐことが困難であった。 　少なくともゲート電極と、該ゲート電極上に形成されたゲート絶縁層とを有する有機トランジスタにおいて、 前記ゲート絶縁層は、前記ゲート電極表面に、第一の共有結合を介して前記ゲート電極表面に対して略垂直方向に結合している第一の有機分子層と、 前記第一の有機分子層の未反応末端部に、第二の共有結合を介して結合している第二の有機分子層とから構成される積層分子膜とを含み、 前記第二の共有結合が、前記積層分子の長軸方向に直交する面方向で、互いに隣接する他の第二の共有結合との間で水素結合を形成していることを特徴とする有機トランジスタを提供することにより上記課題を解決する。
PCT/JP2008/067004 2007-09-27 2008-09-19 有機トランジスタとその製造方法 WO2009041365A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009534306A JP5070292B2 (ja) 2007-09-27 2008-09-19 有機トランジスタとその製造方法
US12/680,413 US8178871B2 (en) 2007-09-27 2008-09-19 Organic transistor and method for producing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-251838 2007-09-27
JP2007251838 2007-09-27

Publications (1)

Publication Number Publication Date
WO2009041365A1 true WO2009041365A1 (ja) 2009-04-02

Family

ID=40511250

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067004 WO2009041365A1 (ja) 2007-09-27 2008-09-19 有機トランジスタとその製造方法

Country Status (3)

Country Link
US (1) US8178871B2 (ja)
JP (1) JP5070292B2 (ja)
WO (1) WO2009041365A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010240829A (ja) * 2009-03-17 2010-10-28 Toshiba Corp 粒子および近接場光導波路
WO2013008269A1 (ja) * 2011-07-11 2013-01-17 パナソニック株式会社 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法
WO2021161830A1 (ja) * 2020-02-14 2021-08-19 東京エレクトロン株式会社 成膜方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9171961B2 (en) * 2012-07-11 2015-10-27 Polyera Corporation Coating materials for oxide thin film transistors
US9035287B2 (en) * 2013-02-01 2015-05-19 Polyera Corporation Polymeric materials for use in metal-oxide-semiconductor field-effect transistors
KR102442188B1 (ko) * 2015-06-19 2022-09-13 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101747264B1 (ko) * 2015-11-30 2017-06-15 엘지디스플레이 주식회사 표시 장치와 그의 제조 방법
EP3920238B1 (en) * 2019-02-01 2024-02-14 FUJIFILM Corporation Organic thin-film transistor and method for producing organic thin-film transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03229710A (ja) * 1990-02-05 1991-10-11 Matsushita Electric Ind Co Ltd 高配向性共役ポリマーの製造方法
JP2003092411A (ja) * 2001-07-26 2003-03-28 Lucent Technol Inc 有機半導体デバイス、有機電界効果トランジスタ及びその製造方法
WO2005109539A1 (de) * 2004-05-03 2005-11-17 Merck Patent Gmbh Elektronische vorrichtungen enthaltend organische halbleiter

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003258260A (ja) 2002-02-28 2003-09-12 Nippon Hoso Kyokai <Nhk> 有機ｔｆｔおよびその作製方法
JP4260508B2 (ja) 2002-07-18 2009-04-30 シャープ株式会社 有機発光素子およびその製造方法
DE102004005082B4 (de) * 2004-02-02 2006-03-02 Infineon Technologies Ag Kondensator mit einem Dielektrikum aus einer selbstorganisierten Monoschicht einer organischen Verbindung und Verfahren zu dessen Herstellung
JP4502382B2 (ja) * 2004-11-02 2010-07-14 キヤノン株式会社 有機トランジスタ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03229710A (ja) * 1990-02-05 1991-10-11 Matsushita Electric Ind Co Ltd 高配向性共役ポリマーの製造方法
JP2003092411A (ja) * 2001-07-26 2003-03-28 Lucent Technol Inc 有機半導体デバイス、有機電界効果トランジスタ及びその製造方法
WO2005109539A1 (de) * 2004-05-03 2005-11-17 Merck Patent Gmbh Elektronische vorrichtungen enthaltend organische halbleiter

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010240829A (ja) * 2009-03-17 2010-10-28 Toshiba Corp 粒子および近接場光導波路
US8475685B2 (en) 2009-03-17 2013-07-02 Kabushiki Kaisha Toshiba Particle and near-field optical waveguide
WO2013008269A1 (ja) * 2011-07-11 2013-01-17 パナソニック株式会社 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法
WO2021161830A1 (ja) * 2020-02-14 2021-08-19 東京エレクトロン株式会社 成膜方法
JP2021127508A (ja) * 2020-02-14 2021-09-02 東京エレクトロン株式会社 成膜方法
KR20220136400A (ko) * 2020-02-14 2022-10-07 도쿄엘렉트론가부시키가이샤 성막 방법
JP7486321B2 (ja) 2020-02-14 2024-05-17 東京エレクトロン株式会社 成膜方法
KR102771476B1 (ko) * 2020-02-14 2025-02-25 도쿄엘렉트론가부시키가이샤 성막 방법

Also Published As

Publication number Publication date
JPWO2009041365A1 (ja) 2011-01-27
US8178871B2 (en) 2012-05-15
JP5070292B2 (ja) 2012-11-07
US20100237337A1 (en) 2010-09-23

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