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WO2009078149A1 - キャリア濃度測定装置およびキャリア濃度測定方法 - Google Patents

キャリア濃度測定装置およびキャリア濃度測定方法 Download PDF

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Publication number
WO2009078149A1
WO2009078149A1 PCT/JP2008/003715 JP2008003715W WO2009078149A1 WO 2009078149 A1 WO2009078149 A1 WO 2009078149A1 JP 2008003715 W JP2008003715 W JP 2008003715W WO 2009078149 A1 WO2009078149 A1 WO 2009078149A1
Authority
WO
WIPO (PCT)
Prior art keywords
carrier concentration
concentration measuring
reflectance
compound semiconductor
inorganic compound
Prior art date
Application number
PCT/JP2008/003715
Other languages
English (en)
French (fr)
Inventor
Hiromasa Ito
Seigo Ohno
Akihide Hamano
Original Assignee
Riken
Furukawa Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Riken, Furukawa Co., Ltd. filed Critical Riken
Priority to US12/747,284 priority Critical patent/US8446576B2/en
Priority to EP08863267.4A priority patent/EP2233914A4/en
Publication of WO2009078149A1 publication Critical patent/WO2009078149A1/ja

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
    • G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Immunology (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

　非破壊キャリア濃度測定装置１００は、テラヘルツ光に対する無機化合物半導体の反射率とキャリア濃度との相関関係を記憶する記憶部１０１と、試料となる無機化合物半導体にテラヘルツ光１０５を照射する光照射部１０３と、照射されたテラヘルツ光１０５に対する無機化合物半導体の反射光１０８を検出する検出部１０９と、照射されたテラヘルツ光１０５と反射光１０８とを対比して無機化合物半導体の反射率の実測値を算出する反射率算出部１１１と、記憶された相関関係を参照し、反射率の実測値に対応する試料のキャリア濃度を読み取る読取部１１３と、を有する。
PCT/JP2008/003715 2007-12-14 2008-12-11 キャリア濃度測定装置およびキャリア濃度測定方法 WO2009078149A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/747,284 US8446576B2 (en) 2007-12-14 2008-12-11 Carrier concentration measuring device and carrier concentration measuring method
EP08863267.4A EP2233914A4 (en) 2007-12-14 2008-12-11 Carrier concentration measuring device and carrier concentration measuring method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-323395 2007-12-14
JP2007323395A JP5063325B2 (ja) 2007-12-14 2007-12-14 キャリア濃度測定装置およびキャリア濃度測定方法

Publications (1)

Publication Number Publication Date
WO2009078149A1 true WO2009078149A1 (ja) 2009-06-25

Family

ID=40795272

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/003715 WO2009078149A1 (ja) 2007-12-14 2008-12-11 キャリア濃度測定装置およびキャリア濃度測定方法

Country Status (4)

Country Link
US (1) US8446576B2 (ja)
EP (1) EP2233914A4 (ja)
JP (1) JP5063325B2 (ja)
WO (1) WO2009078149A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054863A (ja) * 2009-09-04 2011-03-17 Institute Of Physical & Chemical Research 移動度測定装置及びその方法、並びに、抵抗率測定装置及びその方法
WO2011137512A1 (en) 2010-05-03 2011-11-10 Aurora Control Technologies Inc. Non-contact measurement of the dopant content of semiconductor layers
JP2013529297A (ja) * 2010-04-30 2013-07-18 フラウンホッファー−ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー ＴＨｚ測定システム、センサ機構、及び使用方法
JP2015108548A (ja) * 2013-12-04 2015-06-11 古河機械金属株式会社 半導体の電気特性の測定装置、半導体の電気特性の測定方法、半導体の電気特性の測定装置の制御装置、およびコンピュータプログラム。

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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WO2013118575A1 (ja) * 2012-02-10 2013-08-15 関西ペイント株式会社 塗料組成物
JP2013195281A (ja) * 2012-03-21 2013-09-30 Furukawa Co Ltd 電気抵抗測定装置及び電気抵抗測定方法
US9118163B2 (en) 2012-04-11 2015-08-25 The Board Of Trustees Of The University Of Alabama Methods and apparatus for generating terahertz radiation
EP3206014B1 (en) * 2014-10-08 2020-02-26 Riken Optical response measuring device and optical response measuring method
US9599555B2 (en) * 2014-11-13 2017-03-21 Rochester Institute Of Technology Doping profile measurement using terahertz time domain spectroscopy (THz-TDS)
JP6296001B2 (ja) * 2015-05-20 2018-03-20 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法及び評価方法
CN114563372B (zh) * 2022-03-23 2025-03-11 中国科学院重庆绿色智能技术研究院 一种太赫兹波段材料载流子浓度测量方法

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JP2002005828A (ja) 2000-06-20 2002-01-09 Tochigi Nikon Corp 半導体の不純物濃度検査装置及び検査方法
JP2004003902A (ja) * 2002-06-03 2004-01-08 Tochigi Nikon Corp テラヘルツ光を用いた平面基板の電気特性測定方法
JP2004125712A (ja) * 2002-10-04 2004-04-22 Matsushita Electric Ind Co Ltd 分光分析装置
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JP2002005828A (ja) 2000-06-20 2002-01-09 Tochigi Nikon Corp 半導体の不純物濃度検査装置及び検査方法
JP2004003902A (ja) * 2002-06-03 2004-01-08 Tochigi Nikon Corp テラヘルツ光を用いた平面基板の電気特性測定方法
JP2004125712A (ja) * 2002-10-04 2004-04-22 Matsushita Electric Ind Co Ltd 分光分析装置
JP2005315708A (ja) 2004-04-28 2005-11-10 Japan Science & Technology Agency テラヘルツ電磁波を用いた物性測定装置
WO2006030756A1 (ja) * 2004-09-13 2006-03-23 The University Of Tokyo 高周波電磁波を用いた計測方法及び計測装置
JP2007298357A (ja) * 2006-04-28 2007-11-15 Canon Inc 検体情報取得装置、及び検体情報取得方法

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H. ITO; K. SUIZU; T. YAMASHITA; A. NAWAHARA; T. SATO: "Random Frequency Accessible Broad Tunable Terahertz-Wave Source Using Phase-Matched 4-Dimethylamino-N-Methyl-4-stilbazolium Tosylate Crystal", JAPANESE JOURNAL APPLIED PHYSICS, vol. 46, 2007, pages 7321 - 7324
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054863A (ja) * 2009-09-04 2011-03-17 Institute Of Physical & Chemical Research 移動度測定装置及びその方法、並びに、抵抗率測定装置及びその方法
JP2013529297A (ja) * 2010-04-30 2013-07-18 フラウンホッファー−ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー ＴＨｚ測定システム、センサ機構、及び使用方法
WO2011137512A1 (en) 2010-05-03 2011-11-10 Aurora Control Technologies Inc. Non-contact measurement of the dopant content of semiconductor layers
KR20130060217A (ko) * 2010-05-03 2013-06-07 오로라 컨트롤 테크놀로지스 인크. 반도체 층의 도펀트 함유량의 비접촉 측정
EP2567217A4 (en) * 2010-05-03 2016-03-09 Aurora Control Technologies Inc CONTACT-FREE MEASUREMENT OF THE DOTING AGENT OF SEMICONDUCTOR LAYERS
KR101939406B1 (ko) * 2010-05-03 2019-01-16 오로라 솔라 테크놀로지스 (캐나다) 인크. 반도체 층의 도펀트 함유량의 비접촉 측정
JP2015108548A (ja) * 2013-12-04 2015-06-11 古河機械金属株式会社 半導体の電気特性の測定装置、半導体の電気特性の測定方法、半導体の電気特性の測定装置の制御装置、およびコンピュータプログラム。

Also Published As

Publication number Publication date
US20100271618A1 (en) 2010-10-28
JP2009145223A (ja) 2009-07-02
US8446576B2 (en) 2013-05-21
JP5063325B2 (ja) 2012-10-31
EP2233914A4 (en) 2018-01-03
EP2233914A1 (en) 2010-09-29

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