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WO2009011281A1 - Ruban de découpage en puces/fixage de puce et procédé de fabrication de puce semi-conductrice - Google Patents

Ruban de découpage en puces/fixage de puce et procédé de fabrication de puce semi-conductrice Download PDF

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Publication number
WO2009011281A1
WO2009011281A1 PCT/JP2008/062496 JP2008062496W WO2009011281A1 WO 2009011281 A1 WO2009011281 A1 WO 2009011281A1 JP 2008062496 W JP2008062496 W JP 2008062496W WO 2009011281 A1 WO2009011281 A1 WO 2009011281A1
Authority
WO
WIPO (PCT)
Prior art keywords
dicing
semiconductor chip
die bonding
cohesive
bonding tape
Prior art date
Application number
PCT/JP2008/062496
Other languages
English (en)
Japanese (ja)
Inventor
Shota Matsuda
Kouji Watanabe
Satoshi Hayashi
Masateru Fukuoka
Original Assignee
Sekisui Chemical Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co., Ltd. filed Critical Sekisui Chemical Co., Ltd.
Priority to KR1020107001095A priority Critical patent/KR101488047B1/ko
Priority to CN2008800246358A priority patent/CN101772831B/zh
Priority to JP2008532937A priority patent/JP5286085B2/ja
Publication of WO2009011281A1 publication Critical patent/WO2009011281A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C09J2433/006—Presence of (meth)acrylic polymer in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01023—Vanadium [V]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
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    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)

Abstract

L'invention porte sur un ruban de découpage en puces/fixage de puce pour une capture aisée et sûre d'une puce semi-conductrice, dans le cas du découpage en puces d'une tranche semi-conductrice et du ramassage de la puce semi-conductrice conjointement avec un film de fixage de puce. Le ruban de découpage en puces/fixage de puce comporte une couche cohésive/adhésive et une couche non cohésive stratifiée sur la couche cohésive/adhésive. La couche non cohésive est formée d'une composition contenant un polymère d'ester acrylique en tant que composant principal, et la couche non cohésive présente un module élastique de stockage de 1-400 MPa et un allongement à la rupture de 5-100 %, à la température à laquelle la puce semi-conductrice est ramassée.
PCT/JP2008/062496 2007-07-19 2008-07-10 Ruban de découpage en puces/fixage de puce et procédé de fabrication de puce semi-conductrice WO2009011281A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020107001095A KR101488047B1 (ko) 2007-07-19 2008-07-10 다이싱-다이본딩 테이프 및 반도체 칩의 제조 방법
CN2008800246358A CN101772831B (zh) 2007-07-19 2008-07-10 切割和芯片接合用带以及半导体芯片的制造方法
JP2008532937A JP5286085B2 (ja) 2007-07-19 2008-07-10 ダイシング−ダイボンディングテープ及び半導体チップの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-188003 2007-07-19
JP2007188003 2007-07-19

Publications (1)

Publication Number Publication Date
WO2009011281A1 true WO2009011281A1 (fr) 2009-01-22

Family

ID=40259617

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062496 WO2009011281A1 (fr) 2007-07-19 2008-07-10 Ruban de découpage en puces/fixage de puce et procédé de fabrication de puce semi-conductrice

Country Status (5)

Country Link
JP (1) JP5286085B2 (fr)
KR (1) KR101488047B1 (fr)
CN (1) CN101772831B (fr)
TW (1) TWI432547B (fr)
WO (1) WO2009011281A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010287848A (ja) * 2009-06-15 2010-12-24 Sekisui Chem Co Ltd ダイシング−ダイボンディングテープ及び半導体チップの製造方法
JP2011023692A (ja) * 2009-06-15 2011-02-03 Sekisui Chem Co Ltd ダイシング−ダイボンディングテープ及びその製造方法、並びに半導体チップの製造方法
JP2011190354A (ja) * 2010-03-15 2011-09-29 Lintec Corp 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法
WO2012032958A1 (fr) * 2010-09-06 2012-03-15 日東電工株式会社 Film pour dispositif à semi-conducteurs et dispositif à semi-conducteurs
JP2012164890A (ja) * 2011-02-08 2012-08-30 Hitachi Chem Co Ltd 半導体用粘接着シート、それを用いた半導体ウエハ、半導体装置及び半導体装置の製造方法
JP2012164891A (ja) * 2011-02-08 2012-08-30 Hitachi Chem Co Ltd 半導体用粘接着シート、半導体用粘接着シートの製造方法、半導体ウエハ、半導体装置及び半導体装置の製造方法
WO2017154619A1 (fr) * 2016-03-10 2017-09-14 リンテック株式会社 Feuille de collage de puce pour découpage en dés, procédé de fabrication de puce de semi-conducteur et procédé de fabrication de dispositif à semi-conducteur

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054641A (ja) * 2009-08-31 2011-03-17 Nitto Denko Corp 被切断体からのダイシング表面保護テープの剥離除去方法
TWI489492B (zh) * 2011-04-07 2015-06-21 Lg Chemical Ltd 用於形成電極之銀膠組成物及其製備方法
JP2013065625A (ja) * 2011-09-15 2013-04-11 Sekisui Chem Co Ltd ダイシング−ダイボンディングテープ、粘接着剤層付き半導体チップの作製キット及び粘接着剤層付き半導体チップの製造方法
KR20130062817A (ko) * 2011-12-05 2013-06-13 제일모직주식회사 반도체 가공용 접착 테이프
JP6101492B2 (ja) * 2013-01-10 2017-03-22 日東電工株式会社 接着フィルム、ダイシング・ダイボンドフィルム、半導体装置の製造方法及び半導体装置
US9299614B2 (en) * 2013-12-10 2016-03-29 Applied Materials, Inc. Method and carrier for dicing a wafer
KR101722137B1 (ko) 2014-01-03 2017-03-31 주식회사 엘지화학 다이싱 필름 및 다이싱 다이본딩 필름
WO2015102342A1 (fr) * 2014-01-03 2015-07-09 주식회사 엘지화학 Film de découpage en dés et film de fixation de matrice de découpage en dés
JP6121003B2 (ja) * 2014-02-14 2017-04-26 三井化学東セロ株式会社 半導体ウェハ表面保護用粘着フィルム、並びに粘着フィルムを用いる半導体ウェハの保護方法及び半導体装置の製造方法
JP6704322B2 (ja) 2015-09-30 2020-06-03 日東電工株式会社 シートおよび複合シート
JP2017066485A (ja) * 2015-09-30 2017-04-06 日東電工株式会社 シートおよび複合シート
JP6721398B2 (ja) * 2016-04-22 2020-07-15 日東電工株式会社 ダイシングダイボンディングフィルム、ダイシングダイボンディングテープおよび半導体装置の製造方法
JP2021077735A (ja) * 2019-11-07 2021-05-20 株式会社ディスコ ウェーハの加工方法
WO2021193935A1 (fr) * 2020-03-27 2021-09-30 リンテック株式会社 Feuille pour la production d'un dispositif à semi-conducteur et procédé de production d'une puce à semi-conducteur avec un adhésif en forme de film

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JP2002203816A (ja) * 2000-12-28 2002-07-19 Nitto Denko Corp ダイシング用粘着シート
JP2003007646A (ja) * 2001-06-18 2003-01-10 Nitto Denko Corp ダイシング用粘着シートおよび切断片の製造方法
JP2006049509A (ja) * 2004-08-03 2006-02-16 Furukawa Electric Co Ltd:The ウエハ加工用テープ
JP2006165074A (ja) * 2004-12-03 2006-06-22 Sumitomo Bakelite Co Ltd ダイシングシート機能付きダイアタッチフィルム及びそれを用いた半導体装置の製造方法

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JP2726350B2 (ja) * 1992-02-24 1998-03-11 リンテック株式会社 ウェハ貼着用粘着シート
JP3280876B2 (ja) * 1996-01-22 2002-05-13 日本テキサス・インスツルメンツ株式会社 ウェハダイシング・接着用シートおよび半導体装置の製造方法
JP2004292821A (ja) * 2002-06-26 2004-10-21 Hitachi Chem Co Ltd フィルム状接着剤、接着シート及び半導体装置
JP2006203000A (ja) * 2005-01-20 2006-08-03 Sekisui Chem Co Ltd ダイシング用粘着テープおよび半導体チップの製造方法
JP2008091839A (ja) * 2006-10-05 2008-04-17 Sekisui Chem Co Ltd 半導体チップの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203816A (ja) * 2000-12-28 2002-07-19 Nitto Denko Corp ダイシング用粘着シート
JP2003007646A (ja) * 2001-06-18 2003-01-10 Nitto Denko Corp ダイシング用粘着シートおよび切断片の製造方法
JP2006049509A (ja) * 2004-08-03 2006-02-16 Furukawa Electric Co Ltd:The ウエハ加工用テープ
JP2006165074A (ja) * 2004-12-03 2006-06-22 Sumitomo Bakelite Co Ltd ダイシングシート機能付きダイアタッチフィルム及びそれを用いた半導体装置の製造方法

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JP2010287848A (ja) * 2009-06-15 2010-12-24 Sekisui Chem Co Ltd ダイシング−ダイボンディングテープ及び半導体チップの製造方法
JP2011023692A (ja) * 2009-06-15 2011-02-03 Sekisui Chem Co Ltd ダイシング−ダイボンディングテープ及びその製造方法、並びに半導体チップの製造方法
JP2011190354A (ja) * 2010-03-15 2011-09-29 Lintec Corp 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法
WO2012032958A1 (fr) * 2010-09-06 2012-03-15 日東電工株式会社 Film pour dispositif à semi-conducteurs et dispositif à semi-conducteurs
JP2012059768A (ja) * 2010-09-06 2012-03-22 Nitto Denko Corp 半導体装置用フィルム、及び、半導体装置
JP2012164890A (ja) * 2011-02-08 2012-08-30 Hitachi Chem Co Ltd 半導体用粘接着シート、それを用いた半導体ウエハ、半導体装置及び半導体装置の製造方法
JP2012164891A (ja) * 2011-02-08 2012-08-30 Hitachi Chem Co Ltd 半導体用粘接着シート、半導体用粘接着シートの製造方法、半導体ウエハ、半導体装置及び半導体装置の製造方法
WO2017154619A1 (fr) * 2016-03-10 2017-09-14 リンテック株式会社 Feuille de collage de puce pour découpage en dés, procédé de fabrication de puce de semi-conducteur et procédé de fabrication de dispositif à semi-conducteur
KR20180122618A (ko) * 2016-03-10 2018-11-13 린텍 가부시키가이샤 다이싱 다이 본딩 시트, 반도체 칩의 제조 방법 및 반도체 장치의 제조 방법
JPWO2017154619A1 (ja) * 2016-03-10 2019-01-10 リンテック株式会社 ダイシングダイボンディングシート、半導体チップの製造方法及び半導体装置の製造方法
KR102637302B1 (ko) * 2016-03-10 2024-02-15 린텍 가부시키가이샤 다이싱 다이 본딩 시트, 반도체 칩의 제조 방법 및 반도체 장치의 제조 방법

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CN101772831A (zh) 2010-07-07
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CN101772831B (zh) 2011-12-21
KR20100054782A (ko) 2010-05-25
TW200914573A (en) 2009-04-01
KR101488047B1 (ko) 2015-01-30
JP5286085B2 (ja) 2013-09-11

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