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WO2009034993A1 - パワー半導体チップ、パワー半導体モジュール、インバータ装置、及びインバータ一体型モータ - Google Patents

パワー半導体チップ、パワー半導体モジュール、インバータ装置、及びインバータ一体型モータ Download PDF

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Publication number
WO2009034993A1
WO2009034993A1 PCT/JP2008/066313 JP2008066313W WO2009034993A1 WO 2009034993 A1 WO2009034993 A1 WO 2009034993A1 JP 2008066313 W JP2008066313 W JP 2008066313W WO 2009034993 A1 WO2009034993 A1 WO 2009034993A1
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WIPO (PCT)
Prior art keywords
inverter
power semiconductor
motor
integrated type
constituted
Prior art date
Application number
PCT/JP2008/066313
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English (en)
French (fr)
Inventor
Naoki Yamada
Original Assignee
Aisin Seiki Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aisin Seiki Kabushiki Kaisha filed Critical Aisin Seiki Kabushiki Kaisha
Priority to US12/674,124 priority Critical patent/US8339079B2/en
Priority to EP08830074.4A priority patent/EP2190015A4/en
Publication of WO2009034993A1 publication Critical patent/WO2009034993A1/ja

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02K—DYNAMO-ELECTRIC MACHINES
    • H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
    • H02K11/30—Structural association with control circuits or drive circuits
    • H02K11/33—Drive circuits, e.g. power electronics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)

Abstract

　モータとインバータとが効率的に一体化されたインバータ一体型モータを提供する。またこのモータに利用することができる半導体チップを提供する。 　表面形状が正三角形のダイの一方側の面の頂点部にエミッタ端子Ｅ、頂点部の対辺にゲート端子Ｇ、他方側の面にコレクタ端子が配置されてＩＧＢＴチップ１、３が構成される。ＩＧＢＴチップ１のエミッタ端子Ｅがある頂点部を突き合わせてパワー半導体モジュール１０、３０が構成される。６つのパワー半導体モジュール１０、３０が正六角形状に配置され、直流電力を３相交流電力に変換するインバータ５０が構成される。正六角形状のインバータ５０の中心とモータの回転軸とを一致させて、インバータ５０がモータの端部に備えられてインバータ一体型モータが構成される。
PCT/JP2008/066313 2007-09-12 2008-09-10 パワー半導体チップ、パワー半導体モジュール、インバータ装置、及びインバータ一体型モータ WO2009034993A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/674,124 US8339079B2 (en) 2007-09-12 2008-09-10 Power semiconductor chip, power semiconductor module, inverter apparatus, and inverter-integrated motor
EP08830074.4A EP2190015A4 (en) 2007-09-12 2008-09-10 POWER SEMICONDUCTOR CHIP, POWER SEMICONDUCTOR MODULE, INVERTER DEVICE AND ENGINE WITH INTEGRATED INVERTER

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007237033 2007-09-12
JP2007-237033 2007-09-12
JP2008030545A JP5333814B2 (ja) 2007-09-12 2008-02-12 パワー半導体モジュール、インバータ装置、及びインバータ一体型モータ
JP2008-030545 2008-02-12

Publications (1)

Publication Number Publication Date
WO2009034993A1 true WO2009034993A1 (ja) 2009-03-19

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PCT/JP2008/066313 WO2009034993A1 (ja) 2007-09-12 2008-09-10 パワー半導体チップ、パワー半導体モジュール、インバータ装置、及びインバータ一体型モータ

Country Status (4)

Country Link
US (1) US8339079B2 (ja)
EP (1) EP2190015A4 (ja)
JP (1) JP5333814B2 (ja)
WO (1) WO2009034993A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011118266A1 (ja) * 2010-03-23 2011-09-29 アイシン精機株式会社 車両用駆動装置
US20120313111A1 (en) * 2011-06-07 2012-12-13 Raytheon Company DIE ALIGNMENT WITH CRYSTALLOGRAPHIC AXES IN GaN-ON-SiC AND OTHER NON-CUBIC MATERIAL SUBSTRATES

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5300784B2 (ja) * 2010-05-21 2013-09-25 三菱電機株式会社 半導体モジュール及び半導体モジュールを搭載した回転電機
US9224496B2 (en) 2010-08-11 2015-12-29 Shine C. Chung Circuit and system of aggregated area anti-fuse in CMOS processes
US10229746B2 (en) 2010-08-20 2019-03-12 Attopsemi Technology Co., Ltd OTP memory with high data security
US9824768B2 (en) 2015-03-22 2017-11-21 Attopsemi Technology Co., Ltd Integrated OTP memory for providing MTP memory
US9070437B2 (en) 2010-08-20 2015-06-30 Shine C. Chung Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink
US10916317B2 (en) 2010-08-20 2021-02-09 Attopsemi Technology Co., Ltd Programmable resistance memory on thin film transistor technology
US9236141B2 (en) 2010-08-20 2016-01-12 Shine C. Chung Circuit and system of using junction diode of MOS as program selector for programmable resistive devices
US9431127B2 (en) 2010-08-20 2016-08-30 Shine C. Chung Circuit and system of using junction diode as program selector for metal fuses for one-time programmable devices
US8488359B2 (en) 2010-08-20 2013-07-16 Shine C. Chung Circuit and system of using junction diode as program selector for one-time programmable devices
US9818478B2 (en) 2012-12-07 2017-11-14 Attopsemi Technology Co., Ltd Programmable resistive device and memory using diode as selector
US9019742B2 (en) 2010-08-20 2015-04-28 Shine C. Chung Multiple-state one-time programmable (OTP) memory to function as multi-time programmable (MTP) memory
US9042153B2 (en) 2010-08-20 2015-05-26 Shine C. Chung Programmable resistive memory unit with multiple cells to improve yield and reliability
US10923204B2 (en) 2010-08-20 2021-02-16 Attopsemi Technology Co., Ltd Fully testible OTP memory
US9496033B2 (en) 2010-08-20 2016-11-15 Attopsemi Technology Co., Ltd Method and system of programmable resistive devices with read capability using a low supply voltage
US9251893B2 (en) 2010-08-20 2016-02-02 Shine C. Chung Multiple-bit programmable resistive memory using diode as program selector
US9460807B2 (en) 2010-08-20 2016-10-04 Shine C. Chung One-time programmable memory devices using FinFET technology
US10249379B2 (en) 2010-08-20 2019-04-02 Attopsemi Technology Co., Ltd One-time programmable devices having program selector for electrical fuses with extended area
US9711237B2 (en) 2010-08-20 2017-07-18 Attopsemi Technology Co., Ltd. Method and structure for reliable electrical fuse programming
US8830720B2 (en) 2010-08-20 2014-09-09 Shine C. Chung Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devices
US8644049B2 (en) 2010-08-20 2014-02-04 Shine C. Chung Circuit and system of using polysilicon diode as program selector for one-time programmable devices
US9025357B2 (en) 2010-08-20 2015-05-05 Shine C. Chung Programmable resistive memory unit with data and reference cells
US9019791B2 (en) 2010-11-03 2015-04-28 Shine C. Chung Low-pin-count non-volatile memory interface for 3D IC
US8923085B2 (en) 2010-11-03 2014-12-30 Shine C. Chung Low-pin-count non-volatile memory embedded in a integrated circuit without any additional pins for access
US8988965B2 (en) 2010-11-03 2015-03-24 Shine C. Chung Low-pin-count non-volatile memory interface
US8913449B2 (en) 2012-03-11 2014-12-16 Shine C. Chung System and method of in-system repairs or configurations for memories
CN102544011A (zh) 2010-12-08 2012-07-04 庄建祥 反熔丝存储器及电子系统
JP5748476B2 (ja) 2010-12-28 2015-07-15 ローム株式会社 半導体装置およびその製造方法
JP5501257B2 (ja) 2011-01-12 2014-05-21 日立オートモティブシステムズ株式会社 回転電機ユニット
US10192615B2 (en) 2011-02-14 2019-01-29 Attopsemi Technology Co., Ltd One-time programmable devices having a semiconductor fin structure with a divided active region
US8848423B2 (en) 2011-02-14 2014-09-30 Shine C. Chung Circuit and system of using FinFET for building programmable resistive devices
US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
US20120313213A1 (en) * 2011-06-07 2012-12-13 Raytheon Company Polygon shaped power amplifier chips
US9136261B2 (en) 2011-11-15 2015-09-15 Shine C. Chung Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection
US8912576B2 (en) * 2011-11-15 2014-12-16 Shine C. Chung Structures and techniques for using semiconductor body to construct bipolar junction transistors
US9324849B2 (en) 2011-11-15 2016-04-26 Shine C. Chung Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC
US9178410B2 (en) 2012-01-06 2015-11-03 General Electric Company Adaptive power conversion system
US9007804B2 (en) 2012-02-06 2015-04-14 Shine C. Chung Circuit and system of protective mechanisms for programmable resistive memories
JP5888010B2 (ja) * 2012-03-08 2016-03-16 日産自動車株式会社 インバータモジュール
JP5825165B2 (ja) 2012-03-22 2015-12-02 アイシン精機株式会社 中空筒型コンデンサおよびインバータ装置
JP2013198366A (ja) * 2012-03-22 2013-09-30 Aisin Seiki Co Ltd インバータ装置
JP5870797B2 (ja) * 2012-03-22 2016-03-01 アイシン精機株式会社 コンデンサおよびインバータ一体型三相同期モータ装置
JP5796257B2 (ja) * 2012-05-31 2015-10-21 アイシン・エィ・ダブリュ株式会社 インバータ装置
JP5791798B2 (ja) * 2012-06-08 2015-10-07 三菱電機株式会社 電力変換装置内蔵モータ、このモータを内蔵した空気調和機、給湯器、および換気送風機器
US9076526B2 (en) 2012-09-10 2015-07-07 Shine C. Chung OTP memories functioning as an MTP memory
US9183897B2 (en) 2012-09-30 2015-11-10 Shine C. Chung Circuits and methods of a self-timed high speed SRAM
US9324447B2 (en) 2012-11-20 2016-04-26 Shine C. Chung Circuit and system for concurrently programming multiple bits of OTP memory devices
US8937364B2 (en) 2012-12-28 2015-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate high voltage device
JP6236853B2 (ja) * 2013-04-25 2017-11-29 アイシン精機株式会社 中空筒型リアクトル装置、中空筒型コンバータ装置、および中空筒型電源装置
JP6076865B2 (ja) * 2013-09-02 2017-02-08 ルネサスエレクトロニクス株式会社 電子装置
JP6197607B2 (ja) * 2013-11-26 2017-09-20 アイシン精機株式会社 インバータ装置およびインバータ一体形モータ装置
JP2016004877A (ja) * 2014-06-16 2016-01-12 ルネサスエレクトロニクス株式会社 半導体装置および電子装置
US9412473B2 (en) 2014-06-16 2016-08-09 Shine C. Chung System and method of a novel redundancy scheme for OTP
EP3216119B1 (en) * 2014-11-05 2020-03-04 ABB Power Grids Switzerland AG Capacitor unit divided in a plurality of pieces for power converter applications
EP3032581B1 (de) * 2014-12-11 2019-10-09 Dr. Johannes Heidenhain GmbH Schaltzellenanordnung für Wechselrichter
JP6500491B2 (ja) * 2015-02-25 2019-04-17 アイシン精機株式会社 電力変換装置、および電力変換装置一体形モータ装置
DE102015113503A1 (de) * 2015-08-14 2017-02-16 Schweizer Electronic Ag Elektronisches Schaltelement und modular aufgebauter Stromrichter
CN107925374B (zh) * 2015-09-04 2020-08-11 三菱电机株式会社 电动机驱动装置以及空气调节机
WO2017063665A1 (en) * 2015-10-12 2017-04-20 Abb Schweiz Ag Energy absorbing converter cell for hvdc applications
US9484209B1 (en) * 2015-11-20 2016-11-01 International Business Machines Corporation Flexible and stretchable sensors formed by patterned spalling
JP6848183B2 (ja) * 2016-02-16 2021-03-24 富士電機株式会社 電流検出装置および半導体装置
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
US10535413B2 (en) 2017-04-14 2020-01-14 Attopsemi Technology Co., Ltd Low power read operation for programmable resistive memories
US11062786B2 (en) 2017-04-14 2021-07-13 Attopsemi Technology Co., Ltd One-time programmable memories with low power read operation and novel sensing scheme
US10726914B2 (en) 2017-04-14 2020-07-28 Attopsemi Technology Co. Ltd Programmable resistive memories with low power read operation and novel sensing scheme
WO2018235137A1 (ja) * 2017-06-19 2018-12-27 新電元工業株式会社 半導体装置
WO2018235135A1 (ja) * 2017-06-19 2018-12-27 新電元工業株式会社 半導体装置
US10770160B2 (en) 2017-11-30 2020-09-08 Attopsemi Technology Co., Ltd Programmable resistive memory formed by bit slices from a standard cell library
DE102017223631A1 (de) * 2017-12-21 2019-06-27 Robert Bosch Gmbh Inverter für eine elektrische Maschine
CN113497131A (zh) * 2020-04-01 2021-10-12 广东美的白色家电技术创新中心有限公司 功率芯片、其控制方法以及电器设备
CN113066775A (zh) * 2021-02-10 2021-07-02 华为技术有限公司 一种绝缘栅双极型场效应管、组及功率变换器
CN115020388A (zh) * 2022-06-28 2022-09-06 深圳长联半导体技术有限公司 一种低感设计的车用碳化硅模块封装方案
EP4369571A1 (en) * 2022-11-10 2024-05-15 Airbus Operations, S.L.U. Improved internal cooling systems for e-machines

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697279A (ja) * 1992-07-17 1994-04-08 Lsi Logic Corp ウェハ上のダイのレイアウト効率およびダイあたりの能動領域に対するｉ／ｏ領域の比率の増加方法
JPH10248198A (ja) * 1997-02-28 1998-09-14 Toshiba Corp インバータ一体型モータ
US6542365B2 (en) 2000-04-19 2003-04-01 Denso Corporation Coolant cooled type semiconductor device
JP2004047923A (ja) * 2002-05-21 2004-02-12 Fuji Electric Holdings Co Ltd Ｍｉｓ半導体装置およびその製造方法
JP2004063860A (ja) * 2002-07-30 2004-02-26 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2004201462A (ja) * 2002-12-20 2004-07-15 Toyota Motor Corp インバータ装置およびそれを用いた電動機一体インバータ装置
JP2005198443A (ja) * 2004-01-08 2005-07-21 Toyota Industries Corp 半導体装置及びその製造方法
US7207182B1 (en) 2004-12-28 2007-04-24 Schoonover Dale K Swamp cooler cooling system
US7207187B2 (en) 2002-04-26 2007-04-24 Denso Corporation Inverter-integrated motor for an automotive vehicle

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1279792A (fr) * 1960-02-08 1961-12-22 Pacific Semiconductors Transistor composite
GB1001150A (en) * 1963-09-05 1965-08-11 Standard Telephones Cables Ltd Improvements in or relating to transistors
US3821782A (en) * 1971-01-14 1974-06-28 J Hutson High voltage semiconductor device with plural grooves
US5744856A (en) * 1992-07-17 1998-04-28 Lsi Logic Corporation Non-square die for integrated circuits and systems containing the same
US5532934A (en) * 1992-07-17 1996-07-02 Lsi Logic Corporation Floorplanning technique using multi-partitioning based on a partition cost factor for non-square shaped partitions
US5753970A (en) * 1993-06-18 1998-05-19 Lsi Logic Corporation System having semiconductor die mounted in die-receiving area having different shape than die
JP2561005B2 (ja) * 1993-11-18 1996-12-04 日本電気株式会社 半導体装置
US5822214A (en) * 1994-11-02 1998-10-13 Lsi Logic Corporation CAD for hexagonal architecture
US5864165A (en) * 1994-11-02 1999-01-26 Lsi Logic Corporation Triangular semiconductor NAND gate
US5889329A (en) * 1994-11-02 1999-03-30 Lsi Logic Corporation Tri-directional interconnect architecture for SRAM
US5834821A (en) * 1994-11-02 1998-11-10 Lsi Logic Corporation Triangular semiconductor "AND" gate device
US5811863A (en) * 1994-11-02 1998-09-22 Lsi Logic Corporation Transistors having dynamically adjustable characteristics
US5808330A (en) * 1994-11-02 1998-09-15 Lsi Logic Corporation Polydirectional non-orthoginal three layer interconnect architecture
US5973376A (en) * 1994-11-02 1999-10-26 Lsi Logic Corporation Architecture having diamond shaped or parallelogram shaped cells
US5789770A (en) * 1994-11-02 1998-08-04 Lsi Logic Corporation Hexagonal architecture with triangular shaped cells
US5872380A (en) * 1994-11-02 1999-02-16 Lsi Logic Corporation Hexagonal sense cell architecture
US6312980B1 (en) * 1994-11-02 2001-11-06 Lsi Logic Corporation Programmable triangular shaped device having variable gain
US5801422A (en) * 1994-11-02 1998-09-01 Lsi Logic Corporation Hexagonal SRAM architecture
US6097073A (en) * 1994-11-02 2000-08-01 Lsi Logic Corporation Triangular semiconductor or gate
US5631581A (en) * 1995-05-10 1997-05-20 Lsi Logic Corporation Microelectronic integrated circuit including triangular semiconductor "and" gate device
US5859448A (en) * 1996-06-27 1999-01-12 Sun Microsystems, Inc. Alternative silicon chip geometries for integrated circuits
WO2005038926A1 (en) * 2003-10-21 2005-04-28 Philips Intellectual Property & Standards Gmbh Semiconductor device and method of manufacturing such a semiconductor device
JP4656410B2 (ja) * 2005-09-05 2011-03-23 住友電気工業株式会社 窒化物半導体デバイスの製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697279A (ja) * 1992-07-17 1994-04-08 Lsi Logic Corp ウェハ上のダイのレイアウト効率およびダイあたりの能動領域に対するｉ／ｏ領域の比率の増加方法
JPH10248198A (ja) * 1997-02-28 1998-09-14 Toshiba Corp インバータ一体型モータ
US6542365B2 (en) 2000-04-19 2003-04-01 Denso Corporation Coolant cooled type semiconductor device
US7207187B2 (en) 2002-04-26 2007-04-24 Denso Corporation Inverter-integrated motor for an automotive vehicle
JP2004047923A (ja) * 2002-05-21 2004-02-12 Fuji Electric Holdings Co Ltd Ｍｉｓ半導体装置およびその製造方法
JP2004063860A (ja) * 2002-07-30 2004-02-26 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2004201462A (ja) * 2002-12-20 2004-07-15 Toyota Motor Corp インバータ装置およびそれを用いた電動機一体インバータ装置
JP2005198443A (ja) * 2004-01-08 2005-07-21 Toyota Industries Corp 半導体装置及びその製造方法
US7207182B1 (en) 2004-12-28 2007-04-24 Schoonover Dale K Swamp cooler cooling system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Power Devices for Automotive Applications- Review of Technologies for Low Power Dissipation and High Ruggedness", TSUTOMU UESUGI, R&D REVIEW OF TOYOTA CENTRAL R&D LAB., vol. 35, no. 2, 6000620

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011118266A1 (ja) * 2010-03-23 2011-09-29 アイシン精機株式会社 車両用駆動装置
US20120313111A1 (en) * 2011-06-07 2012-12-13 Raytheon Company DIE ALIGNMENT WITH CRYSTALLOGRAPHIC AXES IN GaN-ON-SiC AND OTHER NON-CUBIC MATERIAL SUBSTRATES

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