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WO2009118164A3 - Nanoscale charge carrier mapping - Google Patents

Nanoscale charge carrier mapping Download PDF

Info

Publication number
WO2009118164A3
WO2009118164A3 PCT/EP2009/002173 EP2009002173W WO2009118164A3 WO 2009118164 A3 WO2009118164 A3 WO 2009118164A3 EP 2009002173 W EP2009002173 W EP 2009002173W WO 2009118164 A3 WO2009118164 A3 WO 2009118164A3
Authority
WO
WIPO (PCT)
Prior art keywords
charge carrier
carrier mapping
nanoscale charge
nano
semiconductor device
Prior art date
Application number
PCT/EP2009/002173
Other languages
French (fr)
Other versions
WO2009118164A2 (en
Inventor
Oleg Lourie
Original Assignee
Nanofactory Instruments Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanofactory Instruments Ab filed Critical Nanofactory Instruments Ab
Publication of WO2009118164A2 publication Critical patent/WO2009118164A2/en
Publication of WO2009118164A3 publication Critical patent/WO2009118164A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q10/00—Scanning or positioning arrangements, i.e. arrangements for actively controlling the movement or position of the probe
    • G01Q10/02—Coarse scanning or positioning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
    • G01Q30/02—Non-SPM analysing devices, e.g. SEM [Scanning Electron Microscope], spectrometer or optical microscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/46—SCM [Scanning Capacitance Microscopy] or apparatus therefor, e.g. SCM probes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H01J37/256—Tubes for spot-analysing by electron or ion beams; Microanalysers using scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2583—Tubes for localised analysis using electron or ion beams characterised by their application using tunnel effects, e.g. STM, AFM

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The present invention relates to a measurement device (2) for characterization of physical properties of a nano-sized structure of any semiconductor device using a scanning probe in an electron microscope. The invention further relates to a measurement system (1) comprising such a measurement device (2), a method of testing and verifying nano-sized structures of any semiconductor device and a quality analysis method.
PCT/EP2009/002173 2008-03-25 2009-03-25 Nanoscale charge carrier mapping WO2009118164A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US3912208P 2008-03-25 2008-03-25
SE0800670-2 2008-03-25
SE0800670A SE0800670A0 (en) 2008-03-25 2008-03-25 Nanoscale charge carrier mapping
US61/039,122 2008-03-25

Publications (2)

Publication Number Publication Date
WO2009118164A2 WO2009118164A2 (en) 2009-10-01
WO2009118164A3 true WO2009118164A3 (en) 2009-12-03

Family

ID=41100504

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/002173 WO2009118164A2 (en) 2008-03-25 2009-03-25 Nanoscale charge carrier mapping

Country Status (2)

Country Link
SE (1) SE0800670A0 (en)
WO (1) WO2009118164A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8719961B2 (en) 2010-11-24 2014-05-06 Ut-Battelle, Llc Real space mapping of ionic diffusion and electrochemical activity in energy storage and conversion materials
CN106018442A (en) * 2016-05-31 2016-10-12 华东师范大学 Method for dynamically observing failure of group III-V field effect transistor gate dielectric at atomic scale

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070012093A1 (en) * 2005-07-12 2007-01-18 Psia Co, Ltd Scanning capacitance microscope, method of driving the same, and recording medium storing program for implementing the method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070012093A1 (en) * 2005-07-12 2007-01-18 Psia Co, Ltd Scanning capacitance microscope, method of driving the same, and recording medium storing program for implementing the method

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BONNELL D A ET AL: "Measurement of space charge adjacent to oxide grain boundaries by tunneling spectroscopy", ULTRAMICROSCOPY, ELSEVIER, AMSTERDAM, NL, vol. 42-44, 1 July 1992 (1992-07-01), pages 788 - 792, XP024594786, ISSN: 0304-3991, [retrieved on 19920701] *
COSTA PMFJ ET AL.: "Electrical properties of CNx nanotubes probed in a transmission electron microscope", APPLIED PHYSICS A, vol. A90, no. 2, February 2008 (2008-02-01), Berlin, pages 225 - 229, XP002547748 *
COSTA PMFJ ET AL.: "ZnO low-dimensional structures: electrical properties measured inside a transmission electron microscope", JOURNAL OF MATERIALS SCIENCE, vol. 43, no. 4, February 2008 (2008-02-01), pages 1460 - 1470, XP002547749 *
GOULD ET AL: "STM backs up semiconductor theory", MATERIALS TODAY, ELSEVIER SCIENCE, KIDLINGTON, GB, vol. 10, no. 3, 1 March 2007 (2007-03-01), pages 10, XP005893095, ISSN: 1369-7021 *

Also Published As

Publication number Publication date
WO2009118164A2 (en) 2009-10-01
SE0800670A0 (en) 2009-03-10

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