WO2011052941A3 - Etching composition for texturing crystalline silicon-based wafer - Google Patents
Etching composition for texturing crystalline silicon-based wafer Download PDFInfo
- Publication number
- WO2011052941A3 WO2011052941A3 PCT/KR2010/007323 KR2010007323W WO2011052941A3 WO 2011052941 A3 WO2011052941 A3 WO 2011052941A3 KR 2010007323 W KR2010007323 W KR 2010007323W WO 2011052941 A3 WO2011052941 A3 WO 2011052941A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crystalline silicon
- etching composition
- based wafer
- texturing
- texturing crystalline
- Prior art date
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- 238000005530 etching Methods 0.000 title abstract 2
- 238000009835 boiling Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 150000001923 cyclic compounds Chemical class 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Abstract
Disclosed is an etching composition for texturing a crystalline silicon-based wafer, including (A) 0.1 ~ 20 wt% of at least one alkaline compound, (B) 0.1 ~ 50 wt% of at least one cyclic compound having a boiling point of 100 ~ 400°C, and (C) the remainder of water, based on the total weight of the composition.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0101698 | 2009-10-26 | ||
| KR20090101698 | 2009-10-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2011052941A2 WO2011052941A2 (en) | 2011-05-05 |
| WO2011052941A3 true WO2011052941A3 (en) | 2011-10-27 |
Family
ID=43922785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2010/007323 WO2011052941A2 (en) | 2009-10-26 | 2010-10-25 | Etching composition for texturing crystalline silicon-based wafer |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TW201118154A (en) |
| WO (1) | WO2011052941A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8765001B2 (en) | 2012-08-28 | 2014-07-01 | Rohm And Haas Electronic Materials Llc | Texturing of monocrystalline semiconductor substrates to reduce incident light reflectance |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103890139A (en) * | 2011-10-19 | 2014-06-25 | 东友精细化工有限公司 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
| TWI480264B (en) * | 2013-04-12 | 2015-04-11 | Daxin Materials Corp | Liquid crystal alignment agent, liquid crystal alignment film, and liquid crystal display element and method of manufacturing the same |
| CN104911037A (en) * | 2015-07-03 | 2015-09-16 | 高旭 | Cleaning fluid for industrial products |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980024804A (en) * | 1996-09-20 | 1998-07-06 | 하라 타카시 | Resin Etching Solution and Etching Method |
| KR20050043928A (en) * | 2002-09-04 | 2005-05-11 | 메르크 파텐트 게엠베하 | Etching pastes for silicon surfaces and layers |
| KR100718527B1 (en) * | 2006-04-12 | 2007-05-16 | 테크노세미켐 주식회사 | Stripping solution composition for negative photoresist |
-
2010
- 2010-10-25 WO PCT/KR2010/007323 patent/WO2011052941A2/en active Application Filing
- 2010-10-25 TW TW099136383A patent/TW201118154A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980024804A (en) * | 1996-09-20 | 1998-07-06 | 하라 타카시 | Resin Etching Solution and Etching Method |
| KR20050043928A (en) * | 2002-09-04 | 2005-05-11 | 메르크 파텐트 게엠베하 | Etching pastes for silicon surfaces and layers |
| KR100718527B1 (en) * | 2006-04-12 | 2007-05-16 | 테크노세미켐 주식회사 | Stripping solution composition for negative photoresist |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8765001B2 (en) | 2012-08-28 | 2014-07-01 | Rohm And Haas Electronic Materials Llc | Texturing of monocrystalline semiconductor substrates to reduce incident light reflectance |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011052941A2 (en) | 2011-05-05 |
| TW201118154A (en) | 2011-06-01 |
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