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WO2013031090A1 - Procédé et dispositif de polissage de tranches de silicium - Google Patents

Procédé et dispositif de polissage de tranches de silicium Download PDF

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Publication number
WO2013031090A1
WO2013031090A1 PCT/JP2012/004902 JP2012004902W WO2013031090A1 WO 2013031090 A1 WO2013031090 A1 WO 2013031090A1 JP 2012004902 W JP2012004902 W JP 2012004902W WO 2013031090 A1 WO2013031090 A1 WO 2013031090A1
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WO
WIPO (PCT)
Prior art keywords
polishing
cloth
abrasive
silicon wafer
dressing
Prior art date
Application number
PCT/JP2012/004902
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English (en)
Japanese (ja)
Inventor
茂 大葉
Original Assignee
信越半導体株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 信越半導体株式会社 filed Critical 信越半導体株式会社
Publication of WO2013031090A1 publication Critical patent/WO2013031090A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

Definitions

  • the present invention relates to a polishing method and a polishing apparatus for polishing a silicon wafer by sliding it against a polishing cloth while supplying an abrasive.
  • a silicon wafer manufacturing method includes a slicing step of slicing a silicon ingot to obtain a thin disk-shaped wafer, and a chamfering process for chamfering the outer periphery of the wafer obtained by the slicing step to prevent cracking and chipping.
  • a process a lapping process for flattening the chamfered wafer, an etching process for removing processing distortion remaining on the chamfered and lapped wafer, and a polishing process for polishing the surface of the etched wafer. It has a cleaning step of cleaning the polished wafer and removing the abrasive and foreign matter adhering to the wafer.
  • the above shows only the main processes, and other processes such as a heat treatment process and a surface grinding process are added, and the order of the processes is changed. Moreover, the same process may be implemented in multiple times. Thereafter, an inspection or the like is performed, and the device is sent to a device manufacturing process. An insulating film or a metal wiring is formed on the surface of the silicon wafer, and a device such as a memory is manufactured.
  • the above polishing step is a step of mirror-finishing the surface by bringing the silicon wafer into sliding contact with the polishing cloth while supplying the abrasive.
  • polishing is usually performed through a plurality of stages from rough polishing to final polishing.
  • primary polishing is performed by double-side polishing, and then scratches and the like generated by the primary polishing are removed, and secondary polishing and further polishing are performed by single-side polishing in order to improve the surface roughness.
  • double-sided polishing the wafer is held in the carrier holding hole, the carrier is placed between the upper and lower surface plates to which the polishing cloth is affixed, and the upper and lower surface plates are connected to each other while supplying the abrasive to the polishing cloth. By rotating in the opposite direction, both surfaces of the wafer are brought into sliding contact with the polishing cloth and polished simultaneously (see, for example, Patent Document 1).
  • double-side polishing a method is often employed in which a plurality of wafers are simultaneously polished and repeated in a batch manner.
  • a silicon wafer is held by a polishing head, an abrasive is supplied onto a polishing cloth affixed to a surface plate, and the surface of the silicon wafer is slid onto the polishing cloth by rotating the surface plate and the polishing head. It polishes by making it contact (for example, refer patent document 2).
  • the wafer thickness is measured directly during polishing, and the finish thickness is set so that polishing is terminated when the target thickness is reached.
  • Monitoring system to control has been developed and put into practical use.
  • instead of directly measuring the thickness of the wafer there is also a method of controlling the thickness of the wafer by polishing chips simultaneously with the wafer and monitoring a chip whose thickness changes in proportion to the thickness of the wafer. At this time, an optical interference type or eddy current type measuring device is used for measuring the thickness of the wafer.
  • the former is generally expensive, and the latter is not suitable for a high-purity environment, and there is a problem that automation of a monitoring system using the above-described chip becomes complicated.
  • the polishing rate is constant in each batch, and the difference between the thickness before polishing and the target finished thickness, that is, the polishing allowance and the constant polishing rate is determined from the polishing time. Is calculated, and the target polishing allowance is obtained by polishing with this polishing time.
  • the polishing agent when adjusting the polishing agent to stabilize the polishing rate so that the polishing rate is constant between batches, set the polishing time calculated from the target polishing allowance and the constant polishing rate.
  • the target finished thickness should be obtained.
  • the polishing cloth is clogged or clogged and the polishing power is reduced.
  • dressing of the polishing cloth needs to be performed periodically. Accordingly, a difference in polishing rate due to a change in the state of the polishing cloth occurs between the batches, and in particular, a difference in polishing rate between the batches before and after dressing increases. For this reason, the deviation from the target polishing allowance increases between the batches, resulting in a variation in the finished thickness.
  • the present invention has been made in view of the above-described problems, and suppresses variations in polishing allowance due to a change in polishing rate caused by a change in the dressing state of the polishing cloth, and enables a highly accurate control of the finished thickness of the silicon wafer.
  • An object is to provide a polishing method and a polishing apparatus.
  • the polishing time is set so as to obtain a predetermined polishing allowance, and the abrasive stored in the tank is supplied to the polishing cloth affixed on the surface plate.
  • the silicon wafer is slid in contact with the polishing cloth and polished for the set polishing time, and the polishing of the silicon wafer is repeated batchwise while the supplied abrasive is collected and circulated in the tank.
  • Method for polishing a silicon wafer, comprising a step of setting the polishing time is provided based on the polishing rate of reduction.
  • Such a polishing method can reliably suppress variations in polishing allowance caused by changes in the dressing state of the polishing cloth, and can polish the wafer to a target thickness by controlling the finished thickness with high accuracy.
  • the polishing rate in the step of recording the polishing rate in a database, it is possible to record the polishing rate for each batch after dressing the polishing cloth or for each predetermined batch. If the polishing rate of each batch is recorded in this way, the polishing time can be set more accurately. If the polishing rate for each predetermined batch is recorded, the polishing rate is recorded in the database in advance. Save time.
  • a new abrasive, alkali, and water into the tank before, during, or after polishing the silicon wafer so as not to change the composition of the abrasive. In this way, variation due to the abrasive between batches is reduced and the polishing rate is more stable, so that the finished thickness can be controlled with higher accuracy.
  • the surface plate to which the polishing cloth is attached, the holding means for holding the silicon wafer, and the abrasive stored in the tank are supplied to the polishing cloth, and the supplied abrasive is A circulation system for collecting and circulating in the tank and a control means for setting a polishing time so as to obtain a predetermined polishing allowance while supplying the abrasive to the polishing cloth in the circulation system
  • the silicon wafer is brought into sliding contact with the polishing cloth and polished for the polishing time set by the control means, and the polishing of the silicon wafer is repeated batchwise while the supplied abrasive is collected and circulated in the tank.
  • the polishing apparatus further comprises recording means for previously recording in a database a polishing rate that changes with an increase in the number of batches after dressing the polishing cloth.
  • the stage is based on a polishing rate that changes with an increase in the number of batches after dressing the polishing cloth recorded in the recording means when setting the polishing time to be the predetermined polishing allowance.
  • a polishing apparatus is provided that sets the polishing time.
  • the recording means can be configured to record the polishing rate for each batch after dressing the polishing cloth, or for each predetermined batch.
  • the polishing time can be set more accurately. If the polishing rate is recorded for each predetermined batch, the polishing rate is recorded in the database in advance. It becomes an apparatus that can reduce the time of the preparation process.
  • a new abrasive, alkali, and water into the tank before, during, or after polishing the silicon wafer to adjust the composition of the abrasive so as not to change. If it is such, since the dispersion
  • a polishing rate that changes with an increase in the number of batches after dressing the polishing cloth is recorded in a database in advance, and the recorded polishing rate is Since the polishing time is set based on this, the variation in the polishing allowance caused by the change in the dressing state of the polishing pad can be surely suppressed, and the finished thickness can be controlled with high accuracy to polish the wafer to the target thickness.
  • a method of controlling to a target finished thickness by setting a polishing time calculated from a target polishing allowance and a constant polishing rate is used.
  • a polishing agent is adjusted to perform polishing with a highly stable polishing rate between batches, a target finished thickness can be obtained with relatively high accuracy.
  • the polishing rate changes depending on the dressing state of the polishing cloth, the deviation from the target polishing margin increases between batches, and the finished thickness varies.
  • the deviation of the finished thickness is 0.5 ⁇ m or less, further 0.2 ⁇ m or less.
  • the present inventor has intensively studied to solve such problems.
  • polishing with a highly stable polishing rate between batches by adjusting the polishing agent, etc. it has been found that there is a certain pattern in the change in polishing rate according to the dressing state of the polishing cloth described above. It was. The inventors have conceived that the polishing rate can be predicted with high accuracy by taking the change pattern into consideration, and the present invention has been completed.
  • the polishing apparatus 1 includes an upper surface plate 2 and a lower surface plate 3 provided opposite to each other in the vertical direction.
  • the cloth 4 is affixed.
  • a sun gear 9 is provided at the center between the upper and lower surface plates 2 and 3, and an internal gear 10 is provided at the periphery.
  • the carrier 5 is provided with a holding hole 6 for holding the silicon wafer W, and a plurality of carriers 5 are sandwiched between the upper and lower surface plates 2 and 3.
  • the teeth of the sun gear 9 and the internal gear 10 are engaged with the outer peripheral teeth of the carrier 5, and the upper and lower surface plates 2 and 3 are respectively rotated at a predetermined rotational speed by the upper rotating shaft 7 and the lower rotating shaft 8.
  • each carrier 5 revolves around the sun gear 9 while rotating.
  • the silicon wafer W held in the holding hole 6 of the carrier 5 is brought into sliding contact with the upper and lower polishing cloths 4 and both surfaces thereof are polished simultaneously.
  • the abrasive 13 in the tank 12 is supplied from the nozzle 11 to the polishing pad 4.
  • the supplied polishing agent 13 flows down to the surface plate receiver 18 and is collected in a pipe (not shown), except for a part that cannot be recovered due to, for example, a part scattered during polishing or exhausted as mist. These are collected in the tank 12 and used for subsequent polishing.
  • the abrasive 13 circulates between the tank 12 and the polishing cloth 4 (and the upper and lower surface plates 2 and 3) by the circulation system 14.
  • the polishing apparatus 1 has a control means 15 for setting a polishing time so as to obtain a predetermined polishing allowance before polishing.
  • This control means 15 is connected to the circulation system 14 and the upper and lower rotary shafts 7 and 8, and controls the start and end of polishing so that the polishing is performed at the set polishing time.
  • a recording means 17 is provided for previously recording in the database the polishing rate that changes as the number of batches after dressing the polishing cloth 4 increases.
  • This recording means 17 is connected to the control means 15 so that the polishing speed recorded in the database from the control means 15 can be referred to.
  • the control means 15 sets the polishing time to be a predetermined polishing allowance, the polishing time is based on the polishing speed that changes with the increase in the number of batches after dressing the polishing cloth 4 recorded in the database.
  • the recording means and the control means can be constituted by a personal computer or the like.
  • the silicon wafer W is brought into sliding contact with the polishing cloth 4 while being supplied with the polishing agent 13 to the polishing cloth 4 by the circulation system 14 and is polished for the polishing time set by the control means 15.
  • the polishing of the silicon wafer W is repeated batchwise while the supplied abrasive 13 is collected in the tank 12 and circulated.
  • the recording means 17 records the polishing rate of each batch after dressing the polishing cloth 4 until the next dressing is performed, it occurs when the dressing state of the polishing cloth changes. Changes in the polishing rate can be reflected more accurately in the polishing time, and variations in polishing allowance can be more reliably suppressed.
  • [D n B m ] in the following formula represents the polishing rate in the m-th batch after the n-th dressing.
  • the average value of the polishing rate for the first batch immediately after the dressing recorded in the database is used as shown in the following formula 1.
  • a predicted change amount from the polishing rate in the polishing performed immediately before is obtained by referring to a database, and a polishing rate to which the predicted change amount is applied is used.
  • the polishing rate is obtained using the predicted change amount obtained from the average difference.
  • the polishing rate is obtained using the predicted change amount obtained from the average of the ratios.
  • the recording means does not record the polishing rate of each batch after dressing the polishing cloth, but performs polishing for each predetermined batch until the next dressing is performed after dressing the polishing cloth.
  • the speed may be recorded. For example, in the case of dressing every 10 batches, the polishing speed of any one of the first batch, 3-5 batch, 6-7 batch, 8-10 batch after dressing is stored in the database. Record. Even when only the polishing rate for each predetermined batch is recorded in this way, the polishing rate is recorded in advance in the database while reflecting the change in the polishing rate in the polishing time with sufficient accuracy and suppressing the variation in the polishing allowance. Process time can be reduced.
  • the polishing apparatus 1 adds a new abrasive, alkali, and water to the tank 12 at least before, during, or after polishing the silicon wafer W so that the composition of the abrasive 13 does not change. It is preferable to have a mechanism 16 for adjustment. By adjusting so that the composition of the abrasive does not change during polishing using this mechanism, the variation caused by the change of the abrasive between batches is suppressed, the polishing speed is more stable, and the dressing of the polishing cloth is performed. Since the accuracy of the constant pattern of the change in the polishing rate according to the state is also increased, the finished thickness can be controlled with higher accuracy as a result.
  • FIG. 3 shows how the polishing rate changes with respect to the change in the dressing state of the polishing cloth.
  • FIG. 3 shows the change in the polishing rate in each batch when dressing is performed every 5 batches or 10 batches.
  • the polishing rate is shown as a relative value when the polishing rate in the first batch is 100%.
  • the polishing rate after dressing changes with a relative periodicity.
  • the circled points indicate the first batch immediately after dressing, and it can be seen that the polishing speed is almost the same.
  • the polishing apparatus 21 includes a surface plate 23 to which a polishing cloth 24 is attached, a nozzle 25, and a polishing head 22.
  • the silicon wafer W is held by the polishing head 22, the abrasive 13 in the tank 12 is supplied onto the polishing cloth 24 through the nozzle 25, and the surface plate 23 and the polishing head 22 are respectively connected. Polishing is performed by rotating and bringing the surface of the workpiece W into sliding contact with the polishing pad 24.
  • the polishing apparatus 21 like the above-described polishing apparatus 1 that performs double-side polishing, a circulation system 14 that collects and circulates the supplied polishing agent 13, and a control for setting a polishing time so as to have a predetermined polishing allowance.
  • the control means 15 is similar to the polishing apparatus 1.
  • the polishing time is set based on the polishing rate that changes with the increase in the number of batches after dressing the polishing cloth 24 recorded in the database.
  • the supplied abrasive 13, except for a part of the polishing apparatus 1 flows down to the surface plate receiver 18 and is collected in a pipe (not shown), and then collected in the tank 12, and thereafter Used for polishing.
  • the control device 15 sets the polishing time so that polishing is performed at a predetermined polishing allowance based on the polishing rate that changes as the number of batches increases after dressing the polishing cloth recorded in the database.
  • the polishing rate used when setting the polishing time can be determined by the method described in the description of the polishing apparatus 1 of the present invention described above.
  • the silicon wafer W is slidably brought into contact with the polishing cloth 4 while the polishing agent 13 stored in the tank 12 is supplied to the polishing cloth 4 attached on the surface plates 2 and 3.
  • the controller 15 controls the polishing so that the polishing is completed within the set polishing time.
  • the polishing of the silicon wafer W is repeated batchwise while the supplied abrasive 13 is collected in the tank 12 and circulated. While this polishing is repeated, the polishing cloth 4 is dressed every certain number of batches.
  • polishing rate can be predicted with higher accuracy.
  • the polishing rate for each batch after dressing the polishing cloth or for each predetermined batch can be recorded. If the polishing rate of each batch is recorded in this way, the polishing time can be set more accurately. If the polishing rate for each predetermined batch is recorded, the time for the step of recording the polishing rate in the database in advance can be set. Can be reduced.
  • the composition of the abrasive is not changed by adding a new abrasive, alkali, and water into the tank at least before, during, or after the polishing of the silicon wafer. .
  • a new abrasive, alkali, and water into the tank at least before, during, or after the polishing of the silicon wafer.
  • Example 1 Using a polishing apparatus of the present invention as shown in FIG. 1, polishing of a silicon wafer having a diameter of 300 mm was repeated batchwise according to the method for polishing a silicon wafer of the present invention.
  • the number of polished sheets per batch was five.
  • the polishing time of the etched silicon wafer is set so that the thickness before polishing is about 793 ⁇ 2 ⁇ m to 777 ⁇ m, that is, the polishing margin is about 16 ⁇ m, and the polishing pressure is 200 g / cm 2 . Polished.
  • the polishing rate of each batch after dressing the polishing cloth was recorded. A polishing rate corresponding to the number of batches after dressing was calculated from the recorded polishing rate database, and the predicted results were applied one after another to perform continuous polishing.
  • FIG. 4 shows the results of evaluating the deviation from the target finished thickness of the polished silicon wafer.
  • the deviation from the target thickness was improved as compared with the result of the comparative example described later, and a very good result of 0.5 ⁇ m or less was obtained.
  • the target deviation of 0.2 ⁇ m or less was achieved in 80% or more of the batches.
  • Example 2 In the step of recording the polishing rate in the database, the silicon wafer was polished and evaluated in the same manner as in Example 1 except that the polishing rate for each predetermined batch after dressing the polishing cloth was recorded. did.
  • the polishing rates in the first, third, sixth and eighth batches after dressing were recorded in advance in a database.
  • a polishing rate corresponding to the number of batches after dressing was calculated from the recorded polishing rate database, and the predicted results were applied one after another to perform continuous polishing. The result is shown in FIG. As shown in FIG. 5, the deviation from the target thickness was slightly larger than the result of Example 1, but it was found that the result was improved compared to the result of Comparative Example described later. In Example 2, the target deviation of 0.2 ⁇ m or less could be achieved in about 70% of the batch.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)

Abstract

La présente invention concerne un procédé de polissage de tranches de silicium permettant de paramétrer un temps de polissage de manière à obtenir une marge de polissage prédéfinie, de polir une tranche de silicium en contact glissant avec un tissu abrasif pendant un temps de polissage paramétré tout en délivrant au tissu abrasif un abrasif stocké dans un réservoir, puis de recommencer le polissage des tranches de silicium selon un mode de traitement par lot tout en collectant l'abrasif délivré dans le réservoir et en faisant circuler l'abrasif contenu dans celui-ci. Le procédé de polissage de tranches de silicium comprend une étape consistant à enregistrer préalablement, dans une base de données, le taux de polissage qui varie en fonction d'une augmentation du nombre de lots après que le tissu abrasif a été installé puis, lorsque le temps de polissage est paramétré de manière à obtenir la marge de polissage prédéfinie, une étape consistant à paramétrer le temps de polissage sur la base du taux de polissage qui varie en fonction d'une augmentation du nombre de lots après que le tissu abrasif a été installé et qui a été enregistré dans la base de données. La présente invention concerne donc un procédé et un dispositif de polissage de tranches de silicium en mesure d'éliminer les variations de la marge de polissage dues à un changement du taux de polissage provoqué par une modification de l'état de l'installation du tissu abrasif et de contrôler l'épaisseur finie avec une grande précision.
PCT/JP2012/004902 2011-09-01 2012-08-02 Procédé et dispositif de polissage de tranches de silicium WO2013031090A1 (fr)

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JP2011-190951 2011-09-01
JP2011190951A JP5716612B2 (ja) 2011-09-01 2011-09-01 シリコンウェーハの研磨方法及び研磨装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115383534A (zh) * 2022-09-13 2022-11-25 成都青洋电子材料有限公司 一种单晶硅片的生产工艺

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Publication number Priority date Publication date Assignee Title
JP5967040B2 (ja) * 2013-09-11 2016-08-10 信越半導体株式会社 鏡面研磨ウェーハの製造方法
JP6947135B2 (ja) * 2018-04-25 2021-10-13 信越半導体株式会社 研磨装置、ウェーハの研磨方法、及び、ウェーハの製造方法
WO2019208042A1 (fr) * 2018-04-25 2019-10-31 信越半導体株式会社 Dispositif de polissage, dispositif de polissage de tranches, et procédé de fabrication de tranches
CN113246012B (zh) * 2021-05-14 2022-08-09 上海华力集成电路制造有限公司 化学机械研磨的控制方法、设备和存储介质

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JP2004047747A (ja) * 2002-07-12 2004-02-12 Renesas Technology Corp 複数品種の半導体ウェハの研磨方法および研磨システム
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JP4297614B2 (ja) * 1998-06-26 2009-07-15 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド モデル予測制御を用いた、半導体製作における個別部品の生産を制御するための方法およびコントローラ装置
JP2011077525A (ja) * 2009-10-01 2011-04-14 Siltronic Ag 半導体ウェハの研磨方法

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JPS63185574A (ja) * 1987-01-27 1988-08-01 Kyushu Denshi Kinzoku Kk 半導体ウエハの研磨制御装置
JP4297614B2 (ja) * 1998-06-26 2009-07-15 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド モデル予測制御を用いた、半導体製作における個別部品の生産を制御するための方法およびコントローラ装置
JP2001129754A (ja) * 1999-06-22 2001-05-15 Applied Materials Inc パッドプロファイルを測定する方法および装置、ならびにパッドコンディショニングプロセスの閉ループ制御
JP2002141319A (ja) * 2000-09-20 2002-05-17 Samsung Electronics Co Ltd ウェーハの研磨時間制御方法及びこれを利用したウェーハの研磨方法
JP2004047747A (ja) * 2002-07-12 2004-02-12 Renesas Technology Corp 複数品種の半導体ウェハの研磨方法および研磨システム
JP2005268330A (ja) * 2004-03-16 2005-09-29 Toshiba Ceramics Co Ltd 半導体ウェーハの研磨方法
JP2006286766A (ja) * 2005-03-31 2006-10-19 Nec Electronics Corp 化学的機械的研磨方法及び化学的機械的研磨システム
JP2008047849A (ja) * 2006-07-20 2008-02-28 Toray Ind Inc 研磨方法、研磨パッド、研磨パッドの製造方法
JP2011077525A (ja) * 2009-10-01 2011-04-14 Siltronic Ag 半導体ウェハの研磨方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115383534A (zh) * 2022-09-13 2022-11-25 成都青洋电子材料有限公司 一种单晶硅片的生产工艺

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JP2013055143A (ja) 2013-03-21
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