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WO2015096520A1 - Dispositif électroluminescent - Google Patents

Dispositif électroluminescent Download PDF

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Publication number
WO2015096520A1
WO2015096520A1 PCT/CN2014/086725 CN2014086725W WO2015096520A1 WO 2015096520 A1 WO2015096520 A1 WO 2015096520A1 CN 2014086725 W CN2014086725 W CN 2014086725W WO 2015096520 A1 WO2015096520 A1 WO 2015096520A1
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WO
WIPO (PCT)
Prior art keywords
electrode
width
light emitting
blocking layer
current blocking
Prior art date
Application number
PCT/CN2014/086725
Other languages
English (en)
Chinese (zh)
Inventor
杨力勋
蔡培崧
徐宸科
林素慧
赵志伟
黄少华
Original Assignee
厦门市三安光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 厦门市三安光电科技有限公司 filed Critical 厦门市三安光电科技有限公司
Publication of WO2015096520A1 publication Critical patent/WO2015096520A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Definitions

  • the invention relates to a semiconductor light emitting device and belongs to the technical field of semiconductor device manufacturing.
  • the core basic structure of a light emitting diode includes a p-type semiconductor layer (p region), an active layer (light emitting layer or light emitting portion), and an n-type semiconductor layer (n region).
  • p region p-type semiconductor layer
  • n region n-type semiconductor layer
  • the holes in the p region move toward the n region
  • the electrons in the n region move toward the p region
  • the electrons and holes recombine in the active layer.
  • most of the energy released by the recombination of electrons and holes is released in the form of light (radiation transition). Because LED has the advantages of low energy consumption, environmental protection, miniaturization and long life, it has broad market development prospects.
  • the present invention discloses a light emitting device structure in which at least one electrode structure and a current blocking layer for use with the electrode structure are included.
  • the light emitting device specifically comprising: a light emitting epitaxial stack, comprising at least: a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer sandwiched therebetween; the first electrode Located above the surface of the first semiconductor layer, including a pad and an extension electrode, the extension electrode is extended outward from the pad; a current blocking layer is located under the extension electrode, and an edge thereof and the extension electrode The edges are non-parallel, and the current tends to bypass rather than diffuse through the current blocking layer from the electrode to the device.
  • the light emitting device comprises at least a stacked semiconductor structure and an electrode structure and a current blocking layer.
  • the electrode structure includes at least one pad and one extension electrode, wherein the pad can be used to power the external circuit Connections, extension electrodes are used to facilitate the diffusion of current across the device.
  • the portion connected to the pad has the largest width in the direction orthogonal to the extending direction of the extension electrode, and the width of the extension electrode in the direction orthogonal to the extending direction thereof is from the position of the adjacent pad toward The ends of the extension electrodes are reduced such that the current densities across the cross-section of the entire extension electrode orthogonal to the direction of extension are approximately equal.
  • the current blocking layer at least below the extension electrode, and the current tends to bypass rather than diffuse from the electrode to the device through the current blocking layer.
  • the extending direction of the current blocking layer coincides with the extension electrode, and the width of the current blocking layer in a direction orthogonal to the extending direction thereof decreases from the position of the adjacent pad to the end of the extension electrode.
  • the light emitting device includes at least a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the two types of semiconductor layers. At least above the first semiconductor layer is an electrode that is in direct contact with the first semiconductor layer.
  • the light emitting device includes at least a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the two types of semiconductor layers. There is at least one electrode above the first semiconductor layer, and at least one transparent conductive material is present between the electrode and the first semiconductor layer.
  • the width of the current blocking layer in a direction orthogonal to the extending direction thereof is greater than the width of the extended electrode at the corresponding position, and the width difference between the two is reduced from the position of the adjacent pad to the end of the extended electrode. small.
  • the width of the current blocking layer in a direction orthogonal to the extending direction thereof is smaller than the width of the extended electrode at the corresponding position, and the width difference between the two increases from the position of the adjacent pad to the end of the extended electrode. Big.
  • the extension electrode includes a number of branches that are not directly connected to the pads.
  • the width of the branch in a direction orthogonal to the direction in which it extends is reduced from the starting end to the end.
  • there is a current blocking layer and the current tends to bypass and not diffuse from the electrode to the device through the current blocking layer, the extending direction of the current blocking layer is consistent with the main electrode of the electrode, and the current blocking layer is The width in the direction orthogonal to the direction of extension decreases from the position of the adjacent pad to the end of the extension electrode.
  • a current blocking layer is also present under the extension electrode branch, and a width of the current blocking layer in a direction orthogonal to the extending direction thereof decreases from a position of the branch start end to an end of the branch, The width of the current blocking layer in an orthogonal direction to the direction in which it extends may be greater or smaller than the width of the extended electrode branch at the corresponding position.
  • Fig. 1 is a structural view of a known light emitting device.
  • Figure 2 is a cross-sectional view taken along line AA' of Figure 1.
  • Fig. 3 is a structural view of another known light emitting device.
  • Figure 4 is a cross-sectional view taken along line BB' of Figure 3.
  • Figure 5 is a structural diagram of a light emitting device in accordance with an embodiment of the present invention.
  • Figure 6 is a cross-sectional view taken along line CC' of Figure 5.
  • Figure 7 is a cross-sectional view taken along line DD' of Figure 5.
  • Figure 8 is a structural diagram of a light emitting device in accordance with another embodiment of the present invention.
  • Figure 9 is a structural view of a light emitting device in accordance with still another embodiment of the present invention.
  • Figure 10 is a cross-sectional view taken along line EE' of Figure 9.
  • Figure 11 is a structural view of a light emitting device according to still another embodiment of the present invention.
  • the light-emitting diode can convert the externally injected current into a specific wavelength of light. Therefore, optimizing the current injection mode through proper electrode design is of great significance for improving the energy utilization efficiency and long-term operational stability of the device.
  • the light emitting device includes a first semiconductor layer 141, a light emitting portion 142, a second semiconductor layer 143, and an electrode in direct contact with the first semiconductor layer 141.
  • the electrode includes a pad 121 and an extension electrode 122. The pad may be connected to the external circuit through a wire or other conductor, and the extension electrode promotes diffusion of the current injected by the external circuit on the first semiconductor layer 141.
  • Figure 2 is a cross-sectional view taken along line AA' of Figure 1.
  • the device 101 When the device 101 is turned on with the external circuit, current is diffused to the first semiconductor layer 141 via the pad 121 and the extension electrode 122, and then injected into the light emitting portion 142 from the first semiconductor layer 141, which converts part of the electrical energy into light energy. And emitted, the final current flows into the second semiconductor layer 143 (143 can be directly connected to the external circuit), thus forming a complete loop.
  • the extension electrode 121 is a strip-like structure having a uniform width, so that as the current is diffused onto the first semiconductor layer 141, the current density of the extension electrode in a cross section orthogonal to the extending direction thereof is from the adjacent pad position toward The end of the extension electrode will continue to decrease.
  • the current density of the extended electrode especially the end position of the extended electrode
  • the current density of the region adjacent to the extended electrode and the pad Too large it is easy to cause material loss due to current overload, resulting in shortened device life.
  • the current tends to flow back to the external circuit from the semiconductor stacked structure directly under the electrode because such a current path is the shortest.
  • the current is too small at a position away from the electrode, and the utilization efficiency for the light-emitting portion is too low; on the other hand, the light-emitting portion directly under the electrode generates more light, and when the light is emitted outward It is easier to be blocked by the electrodes, resulting in light loss.
  • Fig. 3 and 4 are another known light emitting device structure 102, and Fig. 4 is a cross-sectional view taken along line BB' of Fig. 3.
  • a current blocking layer 232 exists below the extension electrode 222.
  • the current blocking layer 231 is also present under the electrode pad 221.
  • the current blocking layer can better prevent current from directly injecting into the semiconductor stacked structure directly under the electrode, so that the current of the electrode is better diffused throughout the first semiconductor layer.
  • the edges of the extension electrode 222 and the current blocking layer 232 are parallel to each other.
  • the electrode density at the electrode position adjacent to the pad has a maximum current density, and the current density on the extension electrode decreases from the adjacent pad position toward the end, so that the current density diffused from the extension electrode 222 to the first semiconductor 241 is from The adjacent pad also decreases toward the [z1] end. Therefore, the device 102 still exists.
  • the current density of the extended electrode especially the end position of the extended electrode
  • the extended electrode is adjacent to the pad.
  • the current density of the area is too large, which is easy to cause material loss due to current overload, resulting in a shortened service life of the device.
  • the light emitting device includes at least a first semiconductor layer 341, a light emitting portion 342, a second semiconductor layer 344, and an electrode structure directly thereon.
  • the electrode structure includes a pad 321 and an extension electrode 322.
  • At least a current blocking layer 332 is present under the extension electrode 322.
  • a current blocking layer 331 is also present under the pads.
  • the current blocking layer 332 extends in the same direction as the extension electrode 322, but the current blocking layer edge 332a is non-parallel to the edge 331a of the extension electrode.
  • the width of the extension electrode 322 in the direction orthogonal to the extending direction thereof remains unchanged, and the current blocking layer 332 has the largest width at the position adjacent to the pad (ie, the starting end a) and is reduced in the extending direction (ie, the end b). Amplitude. With this design, although the extension electrode 322 has a higher potential at a portion adjacent to the pad, the resistance caused by the current blocking layer 332 is correspondingly increased, thereby increasing the diffusion of the entire extension electrode 322 toward the first semiconductor layer 341. Uniformity of current.
  • FIG. 8 is a block diagram showing another embodiment 104 in accordance with the present invention.
  • the difference between the device 104 and the device 103 is that at the position adjacent to the pad 421, the extension electrode 422 has the largest width and the width is along with the solder. The disk distance increases as the distance increases.
  • the width of the extension electrode 422 can be matched as closely as possible with the current intensity at the corresponding position, so that the current density across the cross section of the extension electrode 422 in the direction orthogonal to the extension direction remains substantially the same, thereby improving the electrode material. Utilize efficiency and increase the overall stability of the device.
  • FIG. 8 is a block diagram showing another embodiment 104 in accordance with the present invention.
  • the device 104 and the device 103 is that at the position adjacent to the pad 421, the extension electrode 422 has the largest width and the width is along with the solder. The disk distance increases as the distance increases.
  • the width of the extension electrode 422 can be matched as closely as possible with the current intensity at the corresponding position, so that
  • the width of the current blocking layer 432 in the direction orthogonal to the extending direction thereof is smaller than the width of the corresponding extended electrode from the position of the adjacent pad to the end of the extending direction. That is, at the position a, the difference between the expanded electrode width and the current blocking layer width is smaller than the difference between the expanded electrode width and the current blocking layer width at the position a.
  • FIG. 9 and 10 are schematic views showing the structure of a current blocking layer 532 of the device 105, which is larger than the extension electrode 522, in accordance with still another embodiment of the present invention.
  • the extension electrode 522 and the current blocking layer 532 have the largest width, and the width decreases as the distance from the pad increases, but the reduction range of the current blocking layer 532 It is larger than the corresponding expansion electrode. That is, at the position a, the difference between the expanded electrode width and the current blocking layer width is greater than the difference between the expanded electrode width and the current blocking layer width at the position a.
  • a transparent conductive layer 551 is further present between the current blocking layer 532 and the extension electrode 522, and 551 is present over the entire first semiconductor layer 541.
  • Figure 11 is a schematic view showing the structure of still another embodiment of the present invention.
  • the extension electrode 622 also includes a plurality of branches 623.
  • the starting end a of the branch 623 has the largest width and decreases toward the end b.
  • a current blocking layer 633 may be disposed under the branch extension electrode, and a width of the current blocking layer in a direction orthogonal to the extending direction thereof decreases from a position adjacent to the main extension electrode 632 toward a tip end of the branch.

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  • Led Devices (AREA)

Abstract

L'invention concerne un dispositif photoélectrique (105). Le dispositif photoélectrique (105) comporte au moins : une couche de stratification épitaxiale électroluminescente comprenant au moins une première couche semi-conductrice (541) d'un premier type de conduction, une seconde couche semi-conductrice (543) d'un seconde type de conduction et une couche active (542) qui est prise en sandwich entre les première et seconde couches semi-conductrices ; une première électrode située au-dessus d'une surface de la première couche semi-conductrice (541) et comprenant un plot de connexion (521) et une électrode étendue (522), ladite électrode étendue (522) étant formée par extension du plot de connexion (521) vers l'extérieur ; et une couche barrière de courant (532) située en-dessous de l'électrode étendue (522), le sens d'extension de cette dernière correspondant au sens de l'électrode étendue (522), mais le bord de ladite couche barrière de courant n'étant pas agencé en parallèle au bord de l'électrode étendue (522), de sorte qu'un courant est enclin à contourner, et non pénétrer, la couche barrière de courant (532) qui doit s'étaler de l'électrode vers le dispositif (105).
PCT/CN2014/086725 2013-12-23 2014-09-17 Dispositif électroluminescent WO2015096520A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310716962.2A CN103700744A (zh) 2013-12-23 2013-12-23 发光器件
CN201310716962.2 2013-12-23

Publications (1)

Publication Number Publication Date
WO2015096520A1 true WO2015096520A1 (fr) 2015-07-02

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WO (1) WO2015096520A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103700744A (zh) * 2013-12-23 2014-04-02 安徽三安光电有限公司 发光器件
JP2016134439A (ja) 2015-01-16 2016-07-25 株式会社東芝 半導体発光素子
CN104766911A (zh) * 2015-04-09 2015-07-08 聚灿光电科技股份有限公司 Led芯片及其制造方法
CN106935687A (zh) * 2017-04-25 2017-07-07 聚灿光电科技股份有限公司 Led芯片及其制备方法
CN109473527A (zh) * 2018-11-13 2019-03-15 厦门乾照光电股份有限公司 发光二极管的半导体芯片和电流扩展方法
CN114678458A (zh) * 2020-01-03 2022-06-28 厦门三安光电有限公司 一种半导体发光元件
CN113097355B (zh) * 2020-01-08 2022-08-30 安徽三安光电有限公司 发光二极管及其制作方法
CN112117358B (zh) * 2020-09-22 2021-07-16 宁波天炬光电科技有限公司 单芯片大功率led芯片结构
CN113707779A (zh) * 2021-08-30 2021-11-26 安徽三安光电有限公司 发光二极管及发光装置

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US5309001A (en) * 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
CN102194953A (zh) * 2010-03-08 2011-09-21 株式会社东芝 半导体发光器件
KR20110125363A (ko) * 2010-05-13 2011-11-21 주식회사 에피밸리 3족 질화물 반도체 발광소자
CN102437263A (zh) * 2011-12-16 2012-05-02 映瑞光电科技(上海)有限公司 发光二极管及其制造方法
CN102447029A (zh) * 2010-10-11 2012-05-09 Lg伊诺特有限公司 发光器件和包括该发光器件的照明器具
CN103165781A (zh) * 2011-12-09 2013-06-19 奇力光电科技股份有限公司 发光二极管元件
CN103700744A (zh) * 2013-12-23 2014-04-02 安徽三安光电有限公司 发光器件

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KR101014155B1 (ko) * 2010-03-10 2011-02-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
CN102903819B (zh) * 2012-10-30 2015-12-16 安徽三安光电有限公司 具有扩展电极的发光二极管

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Publication number Priority date Publication date Assignee Title
US5309001A (en) * 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
CN102194953A (zh) * 2010-03-08 2011-09-21 株式会社东芝 半导体发光器件
KR20110125363A (ko) * 2010-05-13 2011-11-21 주식회사 에피밸리 3족 질화물 반도체 발광소자
CN102447029A (zh) * 2010-10-11 2012-05-09 Lg伊诺特有限公司 发光器件和包括该发光器件的照明器具
CN103165781A (zh) * 2011-12-09 2013-06-19 奇力光电科技股份有限公司 发光二极管元件
CN102437263A (zh) * 2011-12-16 2012-05-02 映瑞光电科技(上海)有限公司 发光二极管及其制造方法
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