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WO2016002003A1 - Appareil et procédé d'inspection de substrat - Google Patents

Appareil et procédé d'inspection de substrat Download PDF

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Publication number
WO2016002003A1
WO2016002003A1 PCT/JP2014/067529 JP2014067529W WO2016002003A1 WO 2016002003 A1 WO2016002003 A1 WO 2016002003A1 JP 2014067529 W JP2014067529 W JP 2014067529W WO 2016002003 A1 WO2016002003 A1 WO 2016002003A1
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WIPO (PCT)
Prior art keywords
defect
sample
mirror
substrate
image
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PCT/JP2014/067529
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English (en)
Japanese (ja)
Inventor
野副　真理
長谷川　正樹
小林　健二
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株式会社日立ハイテクノロジーズ
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Priority to PCT/JP2014/067529 priority Critical patent/WO2016002003A1/fr
Publication of WO2016002003A1 publication Critical patent/WO2016002003A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials

Definitions

  • the present invention relates to a substrate inspection apparatus and method, for example, an apparatus and method for inspecting a substrate such as SiC, GaN, and Ga 2 O 3.
  • Semiconductor devices include what are called power semiconductors, as well as memory and logic products formed on Si substrates. Power semiconductors are mainly used in inverter / converter circuits, and are used for switching, conversion, motor control, etc.
  • the power semiconductor includes, for example, a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) / IPD (Intelligent Power Device), a diode, an IGBT (Insulated Gate Bipolar Transistor), a power module, and a bipolar transistor.
  • Si In power semiconductors, not only Si but also SiC, GaN, Ga2O3, etc. are used as substrate materials to ensure electrical performance.
  • a substrate formed of SiC, GaN, Ga2O3, or the like is likely to have defects on the surface and inside of the substrate. When a fatal defect occurs, the semiconductor at that location becomes defective. For this reason, reduction of defects is desired. In order to reduce defects, it is important to know how many defects are generated for each substrate material or each manufacturing process.
  • semiconductor devices formed with Si substrates also have an epitaxial growth film and other material layers stacked on the Si substrate in order to improve operating characteristics.
  • the number of processes is increasing, and defects are easily generated on the surface and inside of the substrate as in the case of the power semiconductor substrate.
  • a technique of imaging and inspecting electrons (mirror electrons) reflected near the surface of a sample to which a negative potential has been applied in advance is effective.
  • This inspection is called a mirror electron microscope method.
  • an image is formed by forming an image of mirror electrons reflected in the vicinity of the sample, so if the surface of the sample is unevenly charged or some electrons that are not reflected are irradiated onto the substrate.
  • Patent Document 1 an inspection method has been proposed in which ultraviolet light is irradiated simultaneously with electron beam irradiation to suppress the influence of charging.
  • Patent Document 1 can suppress the influence of non-uniform charging, it does not have sufficient sensitivity to detect internal defects, particularly defects called dislocations, which are the purpose of substrate inspection. Patent Document 1 does not disclose a method of revealing internal defects (dislocations) with high sensitivity in the mirror electron microscope system.
  • the present invention has been made paying attention to the above technical problems, and an epi growth film or a laminated film is formed on the surface thereof, like a power semiconductor substrate (SiC, GaN, Ga2O3, etc.) or a Si substrate.
  • the present invention adopts, for example, the configuration described in the claims.
  • the present specification includes a plurality of means for solving the above-described problems.
  • an electron optical system that irradiates an electron beam emitted from an electron source to a range including a visual field on a sample; and A voltage application unit that applies a voltage of intensity reflected before the electron beam reaches the sample to the sample, and a mirror that forms an image of the mirror electrons reflected by the application of the voltage to obtain a mirror electron image
  • a substrate inspection apparatus having an ultraviolet light irradiation unit that irradiates a range including the irradiation range of the electron beam during irradiation ”.
  • the quality of the substrate (including not only the surface of the sample but also internal defects) can be evaluated at high speed and with high sensitivity.
  • FIG. 1 is a diagram illustrating a configuration of a substrate inspection apparatus according to Embodiment 1.
  • FIG. The figure explaining the relationship between an ultraviolet light irradiation area
  • the schematic diagram which shows the defect part state at the time of irradiating the ultraviolet light from which a wavelength differs.
  • the figure which shows the relationship between the electric potential applied to a sample, and the brightness of a mirror electron image The figure which shows the relationship between the brightness of the mirror microscope image for every board
  • the detection principle proposed by the inventors will be described.
  • the inventors focused on the characteristics of dislocation defects as a technique for solving the above-described technical problems.
  • the detection principle of the present invention will be described by taking an inspection of a SiC substrate as an example.
  • the inventors have found that the SiC substrate can generate carriers on the surface of the sample or in a defective portion by irradiating ultraviolet light having a wavelength corresponding to energy larger than the band gap of the material. It was.
  • the inventors have found that when ultraviolet light having a wavelength corresponding to higher energy is irradiated, photoelectrons start to be generated, and when photoelectrons are generated, carriers accumulated in the defect portion are lost as photoelectrons. It was.
  • the inventors propose a method of generating carriers in the defect portion by irradiating ultraviolet light having an energy that is larger than the band gap but does not generate photoelectrons. Since the charge state of the carrier affects the trajectory of the mirror electrons, the defect portion can be made visible as the contrast in the image by the mirror electron microscope method, and the defect can be detected with high sensitivity. Irradiation with ultraviolet light not only generates carriers inside the defect, but also has the effect of stabilizing the non-uniform charging state as described above.
  • the inventors found 182 nm or more and 380 nm or less as a wavelength condition of ultraviolet light that satisfies the above-mentioned conditions. Note that the penetration depth of ultraviolet light into the substrate varies depending on the wavelength. Therefore, when inspecting an internal defect, it is desirable to have a function of changing the wavelength depending on the depth of the defect to be detected.
  • the inventors propose to shift the focus position of the mirror microscope to an under position or an over position with respect to the sample surface during inspection. By doing so, the change in the trajectory of the mirror electrons from the defective part can be increased, and as a result, the difference of the defective part in the acquired image can be enlarged.
  • the substrate inspection apparatus is equipped with an image processing unit for identifying dislocation species such as surface foreign matter, threading screw dislocation, threading edge dislocation, basal plane dislocation using the contrast and brightness profile of the defect. suggest. By mounting the image processing unit, it is possible to identify the defect type at the same time as the inspection and extract only the fatal defect.
  • dislocation defects not only the defect type but also the dislocation scale (depth and extent) can be determined from the profile.
  • the above-described technique can be applied to a review function for moving to the coordinates of a defect detected by an optical inspection apparatus or another inspection apparatus and capturing an image of the defect portion.
  • a review function for moving to the coordinates of a defect detected by an optical inspection apparatus or another inspection apparatus and capturing an image of the defect portion.
  • FIG. 1 shows the overall configuration of the substrate inspection apparatus according to the present embodiment. However, in FIG. 1, a vacuum exhaust pump, exhaust system piping, and the like are omitted.
  • the irradiation electron beam 100 a emitted from the electron gun 101 is deflected by the ExB deflector 103 while being converged by the condenser lens 102.
  • the irradiation electron beam 100a in which the crossover 100d is formed after the deflection is shaped into a substantially parallel bundle by the objective lens 107 and is irradiated to the sample 104 to be inspected.
  • FIG. 1 only one condenser lens 102 is illustrated, but a similar operation can be realized by a system in which a plurality of electron lenses are combined.
  • a Zr / O / W type Schottky electron source is usually used, but an electron source such as LaB6 may be used in order to increase the current.
  • Control voltage and current control
  • the electron gun control device 105 supplies control signals to the corresponding units, and controls the voltage and current described above.
  • the ExB deflector 103 is installed in the vicinity of the imaging surface of the irradiation electron beam 100a.
  • An aberration is generated in the irradiation electron beam 100 a by the ExB deflector 103.
  • an ExB deflector 106 for correcting aberration is further disposed between the condenser lens 102 and the ExB deflector 103.
  • the irradiated electron beam 100a deflected by the ExB deflector 103 along the axis perpendicular to the sample 104 to be inspected is incident in a direction substantially perpendicular to the surface of the sample 104 to be inspected by the objective lens 107. Formed.
  • the inspection substrate 104 is mounted on the sample stage 108.
  • the transport system up to the sample stage 108 is omitted in FIG.
  • a negative potential close to the acceleration voltage of the irradiation electron beam 100a is applied to the sample 104 to be inspected. Due to this negative potential, the irradiated electron beam 100a is reflected near the surface of the sample 104 to be inspected, and further accelerated upward by this negative potential.
  • the sample voltage controller 109 supplies and controls the voltage applied to the sample 104 to be inspected. In order to reflect the irradiation electron beam 100a in the very vicinity of the specimen 104 to be inspected, it is necessary to control the difference between the acceleration voltage of the irradiation electron beam 100a and the negative potential described above with high accuracy.
  • the sample voltage control unit 109 and the electron gun control unit 105 need to be controlled in conjunction with each other.
  • the negative potential is controlled so as not to be applied to the sample stage 108 when transporting the sample 104 to be inspected on the sample stage 108 or when the sample 104 to be inspected is carried out of the apparatus. Therefore, a negative potential is applied to the sample 104 to be inspected only when an image is captured, that is, when the irradiation electron beam 100a is irradiated.
  • the electron beam 100 c reflected in the vicinity of the sample 104 to be inspected is subjected to a convergence action by the objective lens 107.
  • the electron beam 100 c forms a crossover 100 b between the objective lens 107 and the ExB deflector 103.
  • the ExB deflector 103 is controlled so as not to deflect the electron beam 100c traveling from below. For this reason, the electron beam 100 c that has passed through the ExB deflector 103 rises vertically as it is, and is enlarged and projected onto the image detection unit 112 by the intermediate lens 110 and the projection lens 111.
  • FIG. 1 illustrates a case where the projection lens 111 is a single lens, a system in which a plurality of lenses are combined for the purpose of image correction may be used.
  • the image detection unit 112 converts the detected image signal into an electrical signal and transfers the electrical signal to the image processing unit 116.
  • the image detection unit 112 includes a fluorescent plate 112a for converting reflected electrons into an optical image, an optical image detection device 112b, and an optical image transmission system 112c.
  • An optical fiber bundle is used for the optical image transmission system 112c.
  • the optical image detection device 112b converts the optical image formed on the light receiving surface into an electrical signal and outputs it.
  • a device having an image acquisition mode for a normal stationary subject and a mode for time delay integration (TDI) for a moving subject is used as the optical image detection device 112b.
  • TDI time delay integration
  • the image processing unit 116 includes an image signal storage unit 116a and a defect determination unit 116b.
  • the image processing unit 116 receives electron beam irradiation position (deflection signal) data and stage position data from the electron optical system control device 113 and the stage control device 115, respectively, and receives the image data detected by the image detection unit 112 as the sample 104 to be inspected.
  • the image data is stored in the image signal storage unit 116a in association with the upper coordinate data.
  • the defect determination unit 116b includes (1) a comparison process between the image data with coordinates on the inspection sample 104 and a preset value, and (2) image data acquired or stored at an adjacent similar location. The presence / absence of a defect is determined by executing a comparison process or (3) a comparison process with image prediction data based on design data.
  • the defect determination unit 116b executes a storage process of image data having the corresponding coordinates, a defect type determination process based on detailed image characteristics of the defect part, and the like.
  • Information to be used in the above-described defect determination is selected from the inspection apparatus control unit 117. In any case, the determination value and the determination method set in advance in the inspection apparatus controller 117 are used for the defect determination process.
  • the operating conditions of each part constituting the substrate inspection apparatus are input / output through the inspection apparatus control unit 117.
  • the inspection device control unit 117 Through the inspection device control unit 117, (1) acceleration voltage at the time of electron beam generation, (2) current amount of the irradiated electron beam, (3) electron beam deflection width, (4) electron beam deflection speed, (5) Various conditions such as the moving speed of the sample stage and (6) image detection timing by the image detection apparatus are input in advance.
  • the inspection device control unit 117 comprehensively controls the control signals of each element and provides an interface with the user.
  • a monitor 118 is connected to the inspection apparatus control unit 117. The user can set a part of the conditions related to the above operation according to the contents of the inspection through the interface screen displayed on the monitor 118.
  • ultraviolet light is irradiated not only for the purpose of stabilizing the surface potential of the sample 104 to be inspected but also for the purpose of revealing internal defects in the substrate 104 to be inspected.
  • the ultraviolet ray irradiation system 126 is mounted on the substrate inspection apparatus of the present embodiment.
  • the ultraviolet light irradiation system 126 includes an ultraviolet light source 121, an aperture 123, and a reflection mirror 124.
  • the ultraviolet light source 121 is (1) in the case of a light source that irradiates a single wavelength, (2) in the case of a light source that generates a certain range of energy including necessary energy, and (3) irradiates with a specific energy selected by a spectroscope. It may be a light source, and any light source may be used. In this embodiment, it is assumed that the specimen 104 is irradiated with ultraviolet light having a plurality of wavelengths. For this reason, a band pass filter 122 is provided between the ultraviolet light source 121 and the aperture 123, and a structure capable of selecting light of a predetermined wavelength is adopted.
  • the timing of irradiating the ultraviolet light and the selection of the band pass filter 122 are performed by the ultraviolet light control unit 125.
  • the ultraviolet light irradiation conditions registered in advance for each specimen 104 to be inspected are input through the interface screen displayed on the monitor 118 and registered in the inspection apparatus control unit 117, as with other conditions.
  • FIG. 2 shows the relationship between the ultraviolet light irradiation region, the electron beam irradiation region, and the image pickup region (inspection region).
  • the ultraviolet light irradiation region 201 is wider than the electron beam irradiation region 202. The reason is to prevent the charged state of the surface from being changed by the electron beam irradiation.
  • the inspection area 203 is set inside the electron beam irradiation area 202.
  • the ultraviolet light irradiation region 201 and the electron beam irradiation region 202 are circular regions, and the inspection region 203 is a rectangular region, but if the relationship between the region sizes satisfies the relationship shown in FIG.
  • the shape of each region is arbitrary.
  • the substrate to be inspected 401 is a substrate used for a power semiconductor
  • SiC, GaN, Ga2O3 or the like is used in addition to Si.
  • surface foreign matter, micro scratches, crystal defects, etc. are inspected to identify areas where good products cannot be obtained, predict the yield rate (yield), and take measures against the cause of defects to reduce the defect rate. It is necessary to continue.
  • FIG. 3 shows characteristic examples of defects that are inspection targets.
  • Image (a) shows the foreign substance 301 adhering to the substrate surface.
  • Image (b) shows micro scratch 302 by polishing.
  • Image (c) shows minute pits 303.
  • Image (d) shows a stacking fault 304.
  • Image (e) shows a latent defect 305 that is not visible from the surface.
  • Image (f) shows a dislocation defect 306. All of these defects need to be detected.
  • a method of detecting scattered light generated from a substrate by laser light irradiation is used for inspection of these defects.
  • the conventional method can detect the foreign matter 301 and the micro scratch 302 accompanying the surface shape change, but cannot detect other defects with a small surface irregularity with high sensitivity. For example, in the case of a pit 303 having a very small defect, sufficient sensitivity cannot be obtained by the conventional method. Further, the conventional method cannot detect a part of the stacking fault 304, the latent defect 305, and the dislocation defect 306 in which the type of the defect is not accompanied by a shape abnormality on the surface.
  • dislocation defects 306 that are difficult to see from the surface can be classified mainly into three types: threading screw dislocation, threading edge dislocation, and basal plane dislocation.
  • the substrate inspection apparatus according to the present embodiment can inspect the dislocation defects 306 with high sensitivity.
  • FIG. 4 shows the image formation principle of the mirror electron microscope.
  • FIG. 4A shows the trajectory of mirror electrons when the surface has a concave shape
  • FIG. 4B shows the trajectory of mirror electrons when the surface has a convex shape.
  • a negative potential is applied to the sample 401 to be inspected with respect to the energy of the irradiation electron beam 100a. .
  • a potential distribution is formed immediately above the sample 401 to be inspected.
  • the potential distribution is substantially uniform and flat equipotential lines.
  • the equipotential line 403 that is the surface potential distribution is distorted in accordance with the concave shape 402. Since the mirror electrons have a property of taking a trajectory perpendicular to the equipotential line, the mirror electron 404a reflected at a flat portion becomes a trajectory reflecting upward as it is, but the equipotential line 403 is distorted downward. The mirror electrons 404b reflected at the locations change inward due to the distortion of the equipotential lines 403. On the other hand, as shown in FIG.
  • the equipotential line 403 is distorted upward and distorted in the opposite direction to the concave shape 402. Therefore, the trajectory of the mirror electrons 404 b reflected at the convex shape 405 changes to the outside due to the influence of the distortion of the equipotential line 403.
  • FIG. 4C shows the potential distribution on the surface and the trajectory of the mirror electrons when the positive charge 406 is locally present
  • FIG. 4D shows the case where the negative charge 407 is locally present.
  • the surface potential distribution and the mirror electron trajectory are shown. Since the sample 401 to be inspected is set to a relatively negative potential, the equipotential line 403 has a negative potential distribution.
  • the equipotential lines are distorted downward as shown in FIG.
  • the equipotential lines are distorted upward as shown in FIG. That is, even when local charge exists on the sample surface, the potential distribution is the same as when the physical unevenness exists on the sample surface.
  • FIG. 5 shows how the appearance of the contrast of the mirror microscope image changes due to the difference in trajectory change.
  • FIG. 5A shows how the contrast of the mirror microscope image appears when the concave shape 402 exists on the surface.
  • the upper image 501 is obtained when the in-focus position of the mirror electrons is set to the overfocus 409. In this case, the concave shape portion becomes dark.
  • the lower image 502 is obtained when the in-focus position of the mirror electrons is set to the under focus 408. In this case, the concave shape portion becomes bright.
  • the image processing unit 116 executes a defect determination process based on the contrast of the mirror microscope image.
  • Information about whether the surface of the electron optical system that is in focus is the position of the underfocus 408 or the position of the overfocus 109 with respect to the sample surface is given from the inspection apparatus control unit 117 to the image processing unit 116, for example. .
  • a specific method for classifying defective portions will be described later with reference to FIG. While the surface defect portion has a strong contrast with light and dark, the internal defect is characterized by an intermediate brightness. Therefore, the shape defect and the internal defect can be discriminated from the mirror microscope image.
  • a process 603 for growing an Epi growth film on the substrate surface is executed.
  • a substrate on which an Epi growth film is grown is referred to as an Epi formation substrate.
  • crystal defects are generated.
  • the first layer pattern formation processing 604 is executed.
  • processing 605 for forming an n-layer pattern on the upper layer sequentially is executed. The number of processing steps, pattern shapes, materials, and the like vary depending on the type of semiconductor.
  • a process 606 for evaluating the electrical characteristics of the completed semiconductor circuit is executed to discriminate between a good product and a defective product.
  • the semiconductor circuit is completed through this series of processing steps. If a substrate defect is inspected with high sensitivity at the stage of forming a polishing substrate before forming a pattern (process 602) or the stage of forming an epi growth film (process 603) in this series of processing steps, all patterns are obtained. It is possible to avoid a state in which the presence or absence of a defect is unknown until the electrical characteristic test stage (process 606) after the formation of. Therefore, in this embodiment, the substrate is inspected at the stage where the Epi growth film is grown on the substrate surface.
  • FIG. 1 An example of a mirror microscope image when the substrate (Epi forming substrate) after growing the Epi growth film is imaged by the mirror electron microscope shown in FIG. 1 is shown.
  • FIG. 1 An example of a mirror microscope image acquired without irradiating ultraviolet rays is shown in FIG. In this case, uneven brightness is seen on the entire substrate 701, and the contrast of the defective portions 702 and 703 assumed in two places in the screen is also weak.
  • FIG. 7B shows an example of a mirror microscope image acquired when the same part is observed with a mirror electron microscope in a state where the substrate surface is irradiated with ultraviolet light having a wavelength of 365 nm.
  • uneven brightness is eliminated from the entire substrate 701.
  • the contrast difference between the defective portions 702 and 703 also increased.
  • the defect portion 703 was difficult to recognize when it was not irradiated with ultraviolet light, but can be clearly recognized by irradiation with ultraviolet light having a wavelength of 365 nm.
  • FIG. 8 shows the evaluation results.
  • FIG. 8 shows the results of observing previously known stacking faults for 365 nm, 283 nm, 268 nm, 230 nm, and 180 nm in the wavelength range of 180 nm to 380 nm.
  • the energy of the excited band gap corresponds to 3.40 eV.
  • the penetration depth into the SiC film at this wavelength is equivalent to 120 ⁇ m.
  • the energy of the excited band gap corresponds to 4.38 eV.
  • the penetration depth into the SiC film at this wavelength is approximately 3 ⁇ m.
  • the energy of the excited band gap corresponds to 4.63 eV.
  • the penetration depth into the SiC film at this wavelength is approximately 1 ⁇ m.
  • the energy of the excited band gap corresponds to 5.39 eV.
  • the penetration depth into the SiC film at this wavelength is about 0.1 ⁇ m or less.
  • the energy of the excited band gap corresponds to 6.4 eV.
  • the wavelength range of ultraviolet light is in the range of 182 nm or more and 380 nm or less, but when a mirror microscope image is acquired while irradiating ultraviolet light having a wavelength outside this range of 180 nm, the whole is uniformly bright. It became an image, and it became difficult to recognize the defective portions 801 and 802 (FIG. 8E).
  • FIG. 9 is a diagram schematically illustrating a phenomenon that occurs in a defect when the individual mirror microscope images illustrated in FIG. 8 are acquired. That is, FIG. 9 is a diagram schematically showing the relationship between the irradiation of ultraviolet light of each wavelength described in FIG. 8 and the phenomenon occurring in the defect. As shown in FIG. 9 which is a cross-sectional view, the defect 901 was considered to extend to the depth 903 of about 10 ⁇ m from the substrate surface to the inside.
  • FIG. 9A is a schematic diagram for explaining the phenomenon when the wavelength of ultraviolet light is 365 nm. In the case of this wavelength, it was considered that ultraviolet light could reach deeper than 10 ⁇ m, which is the deepest part of the defect depth 903, and as a result, charges 902 as carriers were generated along the entire area of the defect and simultaneously trapped.
  • FIG. 9B is a schematic diagram for explaining the phenomenon when the wavelength of ultraviolet light is 283 nm.
  • the penetration depth of ultraviolet light is considered to be as shallow as about 3 ⁇ m.
  • the range in which carriers are generated and trapped was considered to be about 3 ⁇ m deep from the substrate surface.
  • FIG. 9C is a schematic diagram for explaining the phenomenon when the wavelength of ultraviolet light is 268 nm. In the case of this wavelength, it was considered that the penetration depth of ultraviolet light became as shallow as 1 ⁇ m, and the depth at which carriers were trapped was also reduced accordingly.
  • FIG. 9D is a schematic diagram for explaining the phenomenon when the wavelength of ultraviolet light is 230 nm. In the case of this wavelength, since carriers are generated only on the extreme surface of the substrate, it was considered that only defects near the surface were observed as potential changes.
  • FIG. 9E is a schematic diagram for explaining a phenomenon in the case where ultraviolet light having a wavelength of 180 nm, which is outside the wavelength condition of the present embodiment, is irradiated.
  • photoelectrons 904 were generated from the SiC substrate, brightened as a whole, the defect contrast was remarkably lowered, and defect recognition became difficult. This is presumably because the carriers trapped in the defect are emitted due to the generation of photoelectrons.
  • the inventors set the optimum inspection condition for ultraviolet light irradiation at a wavelength of 365 nm.
  • the wavelength of the optimum inspection condition was 365 nm, but the optimum wavelength condition depends on the defect type to be inspected and its expected depth. Is different. Therefore, the inventors set the wavelength range of ultraviolet rays to 182 nm or more and 380 nm or less.
  • the relationship between the defect type and / or the expected depth and the optimum wavelength condition of the ultraviolet ray is stored in a storage area (not shown) in a table format. Note that the defect type to be inspected and information on the expected depth thereof are input by the user through an interface screen, for example.
  • the inventors fine-tuned the voltage applied to the sample to be inspected while irradiating the ultraviolet light under the conditions after determining the optimum wavelength of the ultraviolet light irradiated at the time of image acquisition. This is because it is more sensitive to changes in the surface potential when mirror electrons are reflected as close to the surface of the specimen as possible. That is, it aims at improving the sensitivity with respect to the presence or absence of a defect.
  • the voltage application to the sample to be inspected is performed by the sample voltage control unit 109 in FIG.
  • the voltage applied by the sample voltage control unit 109 is set through the inspection apparatus control unit 117.
  • the user inputs a target value of the potential applied to the sample to be inspected through the monitor 118, and inputs a range in which the potential is changed in the plus direction and the minus direction with respect to the potential and a pitch of the change.
  • the target value is -3 kV
  • each image data is acquired while changing the range from -3.2 kV to -2.8 kV in steps of 0.02 kV, and an instruction is given to measure the change in brightness at that time. input.
  • the sample potential changes step by step from ⁇ 3.20 kV to ⁇ 3.18 kV, and a mirror microscope image is acquired each time.
  • the irradiation electron beam 100a emitted from the electron gun 101 is reflected near the surface of the sample 104 to be inspected, and the reflected electron beam 100c is detected by the image detection unit 112. It is stored in the image processing unit 116 as a mirror microscope image detected through the image detection unit 112. In the case of the present embodiment, a function for calculating the average brightness of a predetermined region portion of the stored mirror microscope image is mounted on the inspection apparatus control unit 117.
  • the electron beam 100a having an irradiation energy of 3 keV When the irradiation electron beam 100a having an irradiation energy of 3 keV is irradiated, the electron beam is negative, so that a repulsive force acts on the sample potential applied to ⁇ 3.20 kV and is reflected upward with respect to the sample surface. While all the electrons are mirror-reflected, the brightness is at a constant level. However, the energy of the irradiated electron beam may vary, and the energy of the electron and the sample potential may have a subtle error depending on the accuracy of the power source. For this reason, when the energy of the electron beam and the negative potential on the sample surface approach approximately the same level, most of the electrons are mirror-reflected, but some of the electrons are irradiated on the sample surface. When the sample surface is irradiated with an electron beam, secondary electrons are generated, but the amount is smaller than that of the mirror-reflected electrons. However, the brightness of the acquired mirror microscope image is lower than when all the
  • FIG. 10 shows a change in brightness of a mirror microscope image (mirror electron image) when the voltage applied to the sample to be inspected is changed.
  • the horizontal axis of the graph indicates the magnitude of the negative voltage applied to the sample to be inspected, and the vertical axis indicates the brightness of the mirror microscope image. Note that the absolute value of the negative voltage to be applied is larger on the left side of the horizontal axis and smaller on the right side of the horizontal axis.
  • the brightness of the mirror microscope image is stable at level 1001.
  • the negative applied voltage to the sample to be inspected is gradually changed to the plus side, the point 1002 at which the brightness starts to change is reached.
  • the brightness of the mirror microscope image gradually decreases and reaches a point 1003 where the change is reduced at a certain level. Above this point, the brightness of the mirror microscope image does not change even when the applied voltage is increased, and the region 1004 is where all the irradiated electrons irradiate the sample surface.
  • the voltage immediately before the point 1002 at which the brightness of the mirror microscope image starts changing is closest to the specimen surface.
  • the electrons are reflected near the equipotential line indicating the potential change of the sample surface, and as a result, it is easily affected by the change of the equipotential line, and the condition is highly sensitive to the change of the surface potential. Can be set.
  • the inventors set a voltage corresponding to the optimum range 1005 in FIG. 10 (a voltage within a certain range from the point 1002 to the minus side) as a condition that can achieve both sensitivity and stability. That is, the sample applied voltage is set to the optimum value.
  • the influence of brightness variation is suppressed by calculating the average of the brightness of the mirror microscope image before and after each applied voltage.
  • the point at which the change is obtained and the rate of change becomes equal to or higher than a certain value is defined as a point 1002 at which the change starts.
  • the optimum range 1005 is defined as a range of ⁇ 5 eV or less from the intersection of the tangent of the point 1002 and the tangent of the level 1001 where there is no change in brightness and ⁇ 100 eV or less from the intersection.
  • the optimum range 1005 can be arbitrarily changed according to the purpose, the state of the sample, and the required sensitivity when determining the sensitivity.
  • evaluation may be made with a certain amount of minus ⁇ side, such as ⁇ 100 eV with respect to the target value of ⁇ 3 kV.
  • sample application voltage optimization functions are mounted on the inspection apparatus control unit 117, for example.
  • the inventors optimized the conditions for actually acquiring a mirror microscope image and determining the presence or absence of defects.
  • a procedure for optimizing defect determination will be described.
  • the mirror microscope image captured for a predetermined area of the substrate to be inspected is transferred to the image processing unit 116 and stored in the storage unit.
  • FIG. 11A is an image of a first substrate
  • FIG. 11B is an image of a second substrate of the same type
  • FIG. 11C is an image of a third substrate of a different type from the first and second substrates described above.
  • FIGS. 11 (d), 11 (e), and 11 (f) show the brightness profiles extracted from these images at predetermined locations 1101 (indicated by dotted lines in the figure).
  • the allowable range 1105 in FIG. 11 (d) and the allowable range 1106 in FIG. 11 (f) are threshold values used when determining the presence or absence of defects.
  • the brightness variations 1102, 1103, and 1104 are assumed to vary from substrate to substrate or from place to place on the same substrate.
  • an allowable range 1105 ie, , Threshold value
  • the allowable range 1106 was set to a range larger than the variation 1104.
  • the allowable range can be set using another method. For example, a method of determining a permissible range by acquiring a mirror microscope image for each substrate to be inspected and comparing image signals between adjacent images as shown in FIG. First, as in the case of FIG. 11, the brightness is normalized to a certain level for each substrate to be inspected. Thereafter, the image (a) for the first region in the substrate to be inspected is compared with the image (b) for the adjacent second region, and a difference signal 1201 is calculated. By comparing with the adjacent region, changes in brightness and in-plane variation can be reduced. By setting an allowable level 1202 for the difference signal 1201 shown in the image (c), it is possible to determine a range of variation and a defect.
  • the threshold for defect determination was adjusted, a desired defect was detected, and an image processing condition that did not detect variation was selected.
  • a function for optimizing the condition for determining the presence / absence of a defect is mounted on the image processing unit 116, for example.
  • FIG. 13 shows an inspection processing procedure.
  • inspection conditions are input through an interface screen displayed on the monitor 118 (step 1301).
  • the inspection conditions are information for specifying a substrate to be inspected (for example, a slot in a cassette or a hoop for specifying a wafer, a wafer ID (for example, lot number, wafer number)), a recipe name (ultraviolet light irradiation condition, beam condition, Negative voltage value to be applied to the substrate to be inspected), inspection area, inspection result output contents and format, instruction contents regarding review and image storage after inspection, and the like.
  • optical condition A when detecting a defect with a depth of 20 ⁇ m existing on a 4-inch SiC substrate, the user selects “optical condition A” in which conditions for irradiating ultraviolet light with a wavelength of 350 nm are set when irradiating an electron beam.
  • the user sets the mode for instructing optimization of the sample applied voltage to “ON” as described above.
  • a relationship in which a depth to be inspected and an optimum ultraviolet light wavelength for inspecting the depth are associated with each other is stored in advance in a storage unit such as a hard disk, the user wants to make the inspection target.
  • These optical conditions can be set automatically simply by selecting or inputting the depth.
  • the user selects “area condition B” for setting a wafer size and a total of 6 areas of 20 mm ⁇ 20 mm in total, 5 in the center and 5 in the periphery of the wafer. Further, the user sets the inspection result output contents to automatically save the defect coordinate list of the inspected area, the defect map, and the image of the portion recognized as the defect, and to transfer to the external server. ”Is selected. A combination of these conditions is an inspection recipe. The user selects a recipe name “SiC substrate inspection recipe D” and inputs this recipe name from the monitor 118.
  • the user instructs the start of inspection through the interface screen (step 1302).
  • the wafer in the slot designated by the cassette or the hoop is automatically transferred to the sample exchange chamber and mounted on the holder.
  • the sample exchange chamber is evacuated, and when the vacuum reaches a predetermined level, the wafer along with the holder is transferred into the sample chamber (chamber) (step 1303).
  • the substrate inspection apparatus applies a negative potential to the sample stage 108 and irradiates ultraviolet light under the conditions specified in the inspection recipe D (step 1304).
  • the ultraviolet light can be irradiated continuously, or can be irradiated immediately before acquiring the electron beam image, and the irradiation can be turned off while the electron beam is not irradiated. In this inspection, as described above, ultraviolet light having a wavelength of 365 nm was irradiated.
  • the substrate inspection apparatus calibrates the state of the irradiated electron beam (step 1305).
  • the amount of electron beam is adjusted by current, and then the position and distortion state are corrected.
  • a standard pattern installed on the sample stage 108 is used.
  • the focus condition is set to be under focus.
  • the substrate inspection apparatus calibrates the position information (step 1306). In the stage of inspecting for the presence of defects, a pattern is usually not formed on the surface of the substrate. Therefore, at this stage, the position in the rotation direction is specified by using the center position of the substrate to be inspected, the notch and the orientation flat for specifying the crystal direction, and the coordinates of each inspection region and defect are specified.
  • the substrate inspection apparatus adjusts the gain and offset of the detection system so that the brightness level of the mirror microscope image becomes a predetermined level (step 1307).
  • determination thresholds are set for brightness and signal level. For this reason, adjustment processing is provided so that images with the same conditions can always be acquired.
  • the board inspection apparatus starts inspection (step 1308).
  • image acquisition and stage movement are repeated, and an image of a predetermined area is acquired.
  • an image is acquired in a state where the stage is stationary, and the next image is acquired when the stage is moved to the next inspection position and is stationary. That is, images are acquired sequentially.
  • processing for determining the presence or absence of defects is also executed.
  • a computer such as the image processing unit 116 sequentially determines the presence or absence of a defect based on the stored image, and outputs the result.
  • the presence / absence of a defect may be determined in real time using a dedicated image processing substrate.
  • the substrate inspection apparatus executes a review process for confirming the type and presence of defects (step 1309).
  • this review process in addition to the process of storing the acquired image, re-acquisition of an image under another imaging condition is performed as necessary. However, the review process itself may be skipped.
  • inspection result map output, image transfer, position information numerical data output, and the like are also performed.
  • the wafer is unloaded to the original cassette or hoop slot position (step 1310), and the inspection is terminated (step 1311).
  • FIG. 14 shows an output example of the inspection result.
  • positional information of detected defects is plotted as points 1402 with respect to a circle 1401 having a size indicating the shape and size of the substrate to be inspected.
  • Each point 1402 represents another defect.
  • FIG. 15 shows an example of a defect image.
  • the defect 1501 is detected brightly, but the other defects 1502, 1503, 1504, and 1505 are all dark. Accordingly, the brightness and darkness in the mirror electric microscope image enables separation of foreign matters and residues and other various defects (stacking defects, scratches, pits, dislocations, etc.) without teaching.
  • FIG. 16 shows the result of observing the characteristics of defects that appear dark.
  • a schematic diagram of the defect 1501 that appears bright in FIG. 15 is shown in FIG. 16A, and a brightness profile in the broken line direction in FIG. 15 is shown in FIG. Since this defect has a convex shape with respect to the substrate surface, the defect portion is brighter than the brightness of the substrate.
  • FIG. 16B shows a schematic diagram of the defect 1502 that appears as a dark spot in FIG. 15, and FIG. 16B ′ shows the brightness profile in the broken line direction in the figure. Since it looks like a dark circle, this defect is assumed to be concave with respect to the substrate surface. Furthermore, schematic diagrams of the defects 1503, 1504, and 1505 detected dark in FIG. 15 are shown in FIGS. 16C, 16D, and 16E, respectively, and the brightness profiles in the broken line direction in the figure are shown. 16 (c) ′, (d) ′, and (e) ′.
  • the defect 1503 (FIG. 16C) was identified as a crystal defect called threading screw dislocation because the periphery of the defect was etched away in addition to the pinhole similar to the pit.
  • the defect 1504 (FIG. 16D) has a very small crystal defect even inside, and was found to be a crystal defect called a basal plane dislocation.
  • the defect 1505 (FIG. 16E) is extremely fine and evenly etched, and from its characteristics, it was found that it is a threading edge dislocation. Thus, it has been found that there is a feature in the appearance of the defect in the mirror microscope image depending on the type of the defect.
  • the threading screw dislocation shown in FIG. Corresponds to the defect 1703 in FIG. 17, and it was found that a shadow occurred in the downstream direction of crystal formation. Further, it was found that the basal plane dislocation in FIG. 16D corresponds to the defect 1704 in FIG. 17 and has a shadow upstream of the crystal formation.
  • the image processing unit 116 of the present embodiment is equipped with a function that can automatically distinguish the characteristics of the profile of FIG. 16 based on these results. Specifically, the defects are classified based on the following conditions. First, the image processing unit 116 extracts brightness information for each pixel for a portion determined to be a defect (entire region where a predetermined brightness difference is detected).
  • the image processing unit 116 performs a smoothing process to suppress the influence of noise.
  • the image processing unit tentatively determines that the defective portion is a convex defect with respect to the substrate surface.
  • the image processing unit 116 sequentially executes the following processing.
  • the size LA1 in the longitudinal direction is divided into L11 and L12 starting from the darkest portion P1.
  • the defect is determined according to the brightness of the brightest or darkest point in the defect area and the shape of the defect area (more specifically, the length ratio in the direction perpendicular to the longitudinal direction).
  • Classify More specifically, defects are classified according to the following procedure. In the following description, the five types of defect classification methods shown in FIG. 16 will be described, but other methods can be classified by the same method. Further, a classification procedure other than that described in the present embodiment may be added, and the threshold values described below may be arbitrarily changed.
  • Bright defects may be classified as convex or foreign on the surface.
  • the image processing unit 116 identifies the darkest part from the mirror microscope image acquired for the defective part, and the length characteristic including the contrast and gradation part that looks like a shadow and the like.
  • the positional relationship is digitized, and defect types are automatically classified based on the numerical relationship and the length relationship with respect to the crystal growth direction.
  • the substrate inspection apparatus can detect latent scratches generated when the substrate is polished with high sensitivity, feedback for improving the polishing process can be performed at an early stage of the manufacturing process. Similarly, feedback for forming the laminated film and optimizing the temperature process can be performed at an early stage of the manufacturing process. In addition, it is possible to predict a non-defective product rate for a substrate with many defects. In addition, by removing a substrate with many defects, it is possible to reduce useless manufacturing costs. In addition, by applying a substrate whose quality is controlled by this technology, the quality of the semiconductor device can be further improved, and the time required to reduce the defect rate while improving the reliability of the semiconductor device and the like can be shortened. be able to.
  • Example 2 In Example 1 described above, the wavelength of ultraviolet light was set to 365 nm, and the substrate was inspected for defects. In contrast, in this embodiment, first, ultraviolet light having a first wavelength of 365 nm is irradiated to inspect the substrate for defects, and then the same substrate to be inspected is irradiated with ultraviolet light having the second wavelength of 230 nm. And inspecting the substrate for defects. As a result, as shown in FIGS. 18A and 18B, two inspection results were obtained.
  • FIG. 18 (a) 50 defects were detected, and in the example of FIG. 18 (b), 30 defects were detected.
  • the difference in the number of detections is that in the inspection using the ultraviolet light with the second wavelength of 230 nm (FIG. 18B), only defects near the surface of the sample to be inspected are detected, whereas the ultraviolet light with the first wavelength of 365 nm is detected.
  • FIG. 18A shows that in the inspection using light (FIG. 18A), defects up to about 10 ⁇ m are detected in the internal direction of the inspected substrate. That is, FIG. 18A shows that both surface defects and internal defects are detected, and FIG. 18B shows that only surface defects are detected.
  • the image processing unit 116 includes a process for comparing two inspection results, a process for determining a defect appearing at the same coordinates of the two inspection results as a defect near the surface, and FIG. ), A function for executing a process of determining a defect detected as an internal defect. By mounting this function, it becomes easier to discriminate defect types compared to the first embodiment. In addition, if the inspection is performed in a similar manner by combining a plurality of wavelengths other than the main inspection and a portion where the inspection results do not match is extracted, the depth of the defect can be identified.
  • the substrate inspection apparatus By using the substrate inspection apparatus according to the present embodiment, not only the surface but also internal defects can be detected with high sensitivity in the SiC substrate which is a laminated substrate. Further, since the depth direction of the defect can be identified without performing a cross-sectional analysis, the defect type can be easily specified. As a result, it becomes possible to identify the cause of failure and improve the substrate manufacturing process at an early stage, thereby contributing to the reduction of defects.
  • the substrate inspection apparatus that primarily detects the defect of the substrate has been described.
  • the above-described technique is a review in which the defect coordinates are acquired from another substrate inspection apparatus to inspect the defect. It can also be applied to devices.
  • the board inspection apparatus as a review apparatus is equipped with a communication unit that exchanges position information of an image capturing location with an external apparatus in advance.
  • the stage controller 115 may position the sample 104 to be inspected at the coordinate position designated as the review position and start the above-described inspection operation. According to the present embodiment, it is possible to increase the inspection accuracy of defects by the review device.
  • part or all of the functions executed by the processing unit and the control unit in the above-described embodiments may be realized as an integrated circuit or other hardware, for example.
  • Information such as programs, tables, and files used to implement the functions of the processing unit and control unit is a memory, hard disk, storage device such as SSD (Solid State Drive), storage medium such as IC card, SD card, and DVD. Can be stored.
  • SSD Solid State Drive
  • control lines and information lines indicate what is considered necessary for explanation, and do not represent all control lines and information lines necessary for the product. In practice, it can be considered that almost all components are connected to each other.
  • Optical image detection Device 112c: Optical image transmission system, 113: Electro-optical system control device, 115: Stage control device, 116: Image processing unit, 116a: Image signal storage unit, 116b: Defect determination unit, 117: Inspection device control unit, 118 ... Monitor, 121 ... UV light source, 122 ... Band pass filter, 123 ... Aperture, 124 ... Morphism mirror, 125 ... UV-light control unit, 126 ... UV light irradiation system.

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Abstract

L'invention concerne une technologie d'inspection, à une vitesse plus élevée et une sensibilité plus élevée comparativement aux cas classiques, de défauts de surface et de défauts internes de substrats, tels que des substrats semi-conducteurs de puissance (SiC, GaN, Ga2O3 et analogues) et des substrats en Si, sur lesquels sont formés des couches épitaxiales et des films stratifiés. Afin de fournir cette technologie, l'appareil d'inspection de substrat selon l'invention est pourvu de : un système électro-optique qui applique, à un échantillon, un faisceau d'électrons dans une plage comprenant un champ visuel, ledit faisceau d'électrons étant émis par une source d'électrons ; une unité d'application de tension qui applique, à l'échantillon, une tension à un niveau auquel le faisceau d'électrons est réfléchi avant que le faisceau d'électrons atteigne l'échantillon ; un système optique de formation d'images électroniques miroirs qui obtient une image électronique miroir par la formation d'images d'électrons miroirs au moyen de l'application de tension ; une unité de calcul qui détecte un défaut de l'échantillon à l'aide de l'image électronique miroir ; et une unité d'exposition aux ultraviolets qui s'applique, pendant que le faisceau d'électrons est appliqué, des ultraviolets ayant une longueur d'onde fixée arbitrairement dans une plage de 182 à 380 nm, lesdits ultraviolets étant appliqués à l'échantillon dans la plage de la zone comprenant le champ visuel.
PCT/JP2014/067529 2014-07-01 2014-07-01 Appareil et procédé d'inspection de substrat WO2016002003A1 (fr)

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