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WO2016030998A1 - Dispositif de conversion d'énergie, dispositif à moteur, et module onduleur - Google Patents

Dispositif de conversion d'énergie, dispositif à moteur, et module onduleur Download PDF

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Publication number
WO2016030998A1
WO2016030998A1 PCT/JP2014/072461 JP2014072461W WO2016030998A1 WO 2016030998 A1 WO2016030998 A1 WO 2016030998A1 JP 2014072461 W JP2014072461 W JP 2014072461W WO 2016030998 A1 WO2016030998 A1 WO 2016030998A1
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WO
WIPO (PCT)
Prior art keywords
dead time
turn
synchronous rectification
detector
lower arms
Prior art date
Application number
PCT/JP2014/072461
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English (en)
Japanese (ja)
Inventor
石垣　隆士
景山　寛
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to PCT/JP2014/072461 priority Critical patent/WO2016030998A1/fr
Priority to JP2016545149A priority patent/JP6167244B2/ja
Publication of WO2016030998A1 publication Critical patent/WO2016030998A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to a power conversion device and a control method.
  • IGBT Insulated Gate Bipolar Transistor
  • PIN p-intrinsic-n diodes
  • Si silicon
  • the AC power is generated as the output of the inverter device by alternately switching the IGBTs of the upper and lower arms by a driving device connected to the gate terminal of each IGBT. At this time, conduction loss and switching loss occur in each element, which becomes power conversion loss of the inverter device.
  • the loss of the current Si device almost reaches the theoretical value determined from the physical property value of Si, and it is difficult to further reduce it.
  • SiC and GaN are promising as next-generation power devices because they have the characteristics that the band gap is larger than that of silicon and the dielectric breakdown electric field is about one digit larger.
  • SiC vertical MOSFETs Metal Oxide Semiconductor Field Effect Transistors
  • the MOSFET is a unipolar element, so that high-speed switching is possible. Therefore, In the inverter device using the SiC-MOSFET, a significant loss reduction is expected.
  • the vertical MOSFET has a body diode (built-in diode) inside the element.
  • PND PN diode
  • the MOSFET is connected in antiparallel with a channel that conducts when turned on. That is, when an inverter device is configured using a vertical MOSFET, unlike an IGBT, an antiparallel diode element is not required. That is, an inverter device can be configured with only MOSFET elements. This greatly contributes to downsizing and cost reduction of the inverter device.
  • the vertical MOSFET also has a feature that conduction between the drain and the source is possible when the gate is on. Therefore, if either one of the upper and lower arms is refluxing and synchronous rectification is performed to turn on the MOSFET of that arm, in addition to the built-in diode, the low-resistance channel conduction of the parallel MOSFET is also used as a current path. It is possible to further reduce the loss.
  • the built-in diode of SiC-MOSFET may cause a deterioration phenomenon of energization when a current is applied, such that a stacking fault grows due to recombination of electrons and holes, resulting in deterioration of on-voltage, etc. This reduces the hole current of the built-in diode and leads to suppression of deterioration of energization.
  • a dead time is generally provided in order to prevent the upper and lower arms from being simultaneously turned on and a through current flows (short circuit).
  • the dead time is a period from the time when one of the upper and lower arms is turned off to the time when the other is turned on.
  • there is a delay in turning on / off the actual element with respect to the signal of the driving device If the dead time is too short, there is a possibility of a short circuit between the upper and lower arms, and if the dead time is set too long, the power conversion efficiency of the inverter device is reduced.
  • energization is performed by the built-in diode, which may cause energization deterioration.
  • Patent Document 1 describes an example in which the dead time is varied based on the switching time of the element
  • Patent Document 2 describes an example in which the load current is detected and the dead time is varied in accordance with the load state. .
  • these have the problem that a detection circuit and a determination circuit are newly required and the operation becomes complicated.
  • the present disclosure has been made in view of the above, and provides a power conversion device with high conversion efficiency in an inverter device using a SiC-MOSFET without complicating circuits and operations.
  • a power conversion device includes a reverse converter that converts DC power to AC power and includes a wide band gap semiconductor switching element in the upper and lower arms, and an upper and lower arm
  • a power conversion device includes: a device that detects which side performs synchronous rectification operation; and a drive device that drives a wide bandgap semiconductor switching element.
  • the dead time before turn-on is shorter than the dead time when it is not synchronous rectification.
  • the dead time after turn-off is less than the dead time when it is not synchronous rectification. Has a lengthening feature.
  • the motor device includes a detector that detects which side of the upper and lower arms performs the synchronous rectification operation, and a drive device that drives the wide band gap semiconductor switching element. Furthermore, with the detector output as input, the dead time before turn-on in the synchronous rectification operation is shorter than the dead time when not in synchronous rectification, and the dead time after turn-off in the synchronous rectification operation is synchronous rectification. And a control device for controlling the drive device so as to be longer than the dead time when not.
  • Another aspect of the present invention is an inverse converter module comprising a wide band gap semiconductor switching element in the upper and lower arms, an inverter for converting DC power to AC power, and an output terminal for outputting AC power from the inverter. It is.
  • This module is designed to make the dead time before turn-on shorter than the dead time after turn-off when the current flows back to the driving device for driving the wide band-gap semiconductor switching device and the wide band-gap semiconductor switching device.
  • a control device for controlling the driving device.
  • a detector for detecting which side of the upper and lower arms is refluxed is built in, and the detector is configured to feed back to the control device.
  • an input terminal for inputting a feedback signal from the detector to the control device is provided.
  • FIG. 1 is a configuration circuit diagram of a power conversion device in Embodiment 1.
  • FIG. 1 is a drive circuit diagram of an inverter device in Embodiment 1.
  • FIG. It is explanatory drawing figure of the dead time in a prior art example.
  • FIG. 4 is an explanatory cross-sectional view showing a cross-sectional structure and operation of a SiC-MOSFET.
  • FIG. 3 is an explanatory circuit diagram of a turn-on operation when the synchronous rectification is not performed in the first embodiment. It is a graph of the capacitance characteristic example of SiC-MOSFET. 3 is an explanatory circuit diagram of a turn-on operation in the case of synchronous rectification in Embodiment 1.
  • FIG. 3 is an explanatory graph of dead time in Example 1.
  • FIG. It is a structure circuit diagram of the power converter device in Example 2.
  • FIG. 1 is a drive circuit diagram of an inverter device in Embodiment 1.
  • FIG. It is explanatory drawing
  • notations such as “first”, “second”, and “third” are attached to identify the constituent elements, and do not necessarily limit the number or order.
  • a number for identifying a component is used for each context, and a number used in one context does not necessarily indicate the same configuration in another context. Further, it does not preclude that a component identified by a certain number also functions as a component identified by another number.
  • FIG. 1 shows a configuration example of a power conversion device according to the first embodiment of the present invention.
  • the inverter device 2 is composed of a switching element which is a semiconductor element, and the switching element is a MISFET (metal-insulator-semiconductor-field-effect-transistor) such as a SiC-MOSFET (metal-oxide-semiconductor-field-effect-transistor). Alternatively, it may be a wide bandgap semiconductor FET such as GaN, gallium oxide, diamond, etc. Also, although each arm is composed of only switching elements, it is shown in reverse parallel These diodes may be connected.
  • MISFET metal-insulator-semiconductor-field-effect-transistor
  • SiC-MOSFET metal-oxide-semiconductor-field-effect-transistor
  • the inverter device 2 has a three-phase configuration and includes a U phase (UP and UN), a V phase (VP and VN), and a W phase (WP and WN).
  • UP and UN U phase
  • V phase V phase
  • WP and WN W phase
  • a portion between the terminal P and the U-phase output is called a U-phase upper arm
  • a portion between the terminal N and the U-phase output is called a U-phase lower arm.
  • the inverse converter 2 can be configured as an integral module.
  • the current detector 4 may be built in the module, or may be outside the module, for example, on the AC motor 1 side.
  • FIG. 2 shows a U-phase drive device among the three phases constituting the inverter device 2. Although not shown here, the other phases are the same.
  • a gate driver 6 is provided for the switching element (SiC-MOSFET) 5 of each arm constituting the inverter device 2, and the gate driver 6 receives a command (control signals VGP, VGN) from the control circuit 7. Based on this, gate voltages (VGUP, VGUN) necessary for driving the switching element 5 are generated and supplied.
  • Rg is the input resistance.
  • the gate driver 6 and the control circuit 7 can be configured as an integral module as a part of the inverter device 2. Alternatively, the gate driver 6 and the control circuit 7 may be separate modules from the inverter device 2. When it is necessary to generate VGUP and VGUN, a feedback signal (FB) can be input to the control circuit 7. When the gate driver 6 and the control circuit 7 are configured as an integral module as a part of the inverter device 2, in order to input a feedback signal (FB) from the outside of the module, the feedback input terminal 10 may be provided in the module. .
  • FIG. 3 is an explanatory diagram of gate driving in a comparative example of the present invention.
  • dead times DT1 and DT2 are always provided in control signals (PWM signals) VGP and VGN to the upper and lower arms of the inverter.
  • the dead time is ideally 0, but in reality, a delay time occurs at the on / off time due to the characteristics of the switching element itself and the drive circuit components, and as shown in FIG. 3, the gate voltages VGUP and VGUN of the element are It will be later than the control signal.
  • DT1 DT2 from the viewpoint of easy generation of the control signal.
  • the inverter device is composed of SiC-MOSFET, when the arm on the reflux side is turned on, synchronous rectification occurs.
  • the term “reflux” refers to a state in which a current normally flowing from the drain to the source flows from the source to the drain in the SiC-MOSFET. Turning on the refluxing arm may mean turning on the arm in which current flows from the source to the drain.
  • FIG. 4 shows a schematic cross-sectional view of the SiC-MOSFET.
  • S is a source electrode
  • G is a gate electrode
  • I is a gate insulating film
  • D is a drain electrode
  • SUB is a SiC substrate
  • 400 is an N-type source region
  • 410 is a P-type contact
  • 420 is a P-type body region
  • 430 is a channel
  • Reference numeral 440 denotes a drift layer.
  • the reverse conduction of the lower arm SiC-MOSFET can also be used as a current path (channel current path 460), resulting in lower resistance (lower loss). ) Can be refluxed.
  • the present inventors have found that the delay time in the synchronous rectification on / off of the SiC-MOSFET is larger than the on / off of the normal operation that is not synchronous rectification.
  • FIG. 5 shows an illustration of the normal turn-on operation.
  • the turn-on operation will be described, but the same applies to the turn-off operation.
  • FIG. 5 shows a case where the upper arm side is turned on in a state where the lower arm side gate is turned off and refluxed.
  • the current path (reflux) is indicated by Ri.
  • a gate-drain capacitance Cgd, a gate-source capacitance Cgs, and a gate-source capacitance Cds which are capacitances between terminals of the element.
  • Ciss the gate input capacitance of the upper arm SiC-MOSFET.
  • FIG. 6 shows the capacitance characteristics of the SiC-MOSFET.
  • the lower arm side is in a reflux state with the gate off. From here, the lower arm is turned on to perform synchronous rectification.
  • the current path (reflux) is indicated by Ri.
  • the gate driver 6 turns on the gate voltage VGUN
  • the drive current Di flows.
  • the voltage between the drain and source of the lower arm SiC-MOSFET is a low voltage, and therefore, as shown in the capacitance characteristic of FIG. It has become.
  • wide band gap semiconductors such as SiC-MOSFETs are designed to have a short drift layer and a high impurity concentration, so that the gate-drain capacitance (feedback capacitance) Cgd is essentially larger than that of conventional Si elements.
  • the capacitance ratio Cgs / Cgd is particularly small, and the drive current is also distributed to Cgd. That is, it was found that the amount of current flowing to Cgs is reduced, the charging of Cgs is delayed, and the turn-on operation is delayed. This means that in the case of the conventional dead time setting, it is necessary to set the dead time longer. However, as described in the background, if the dead time is lengthened in accordance with the delay at the time of synchronous rectification, an excessive dead time is set as compared with the normal time, resulting in a decrease in power conversion efficiency. Further, since the SiC-MOSFET built-in PND is energized during the dead time, there is a high possibility that energization deterioration will occur.
  • FIG. 8 shows the dead time timing in the first embodiment of the present invention.
  • the dead time DT1 'before turn-on of the arm on the synchronous rectification side is shortened, and the dead time DT2' after turn-off is lengthened (DT1 ' ⁇ DT2').
  • DT1 ' ⁇ DT2' since the turn-on at the time of synchronous rectification is delayed, even if DT1 'is short and the turn-off on the opposite arm side is not sufficiently completed, it is difficult to cause a short-circuit state.
  • DT2 ' since the turn-off at the time of synchronous rectification is also delayed, DT2 'is likely to be short-circuited unless lengthened.
  • the current detector 4 can be used to determine which side of the upper and lower arms is subjected to synchronous rectification. That is, in each U, V, and W phase, when a current flows from the inverter device 2 toward the AC motor 1, the lower arm side of the phase is refluxed, and a synchronous rectification operation is performed. On the contrary, when a current flows from the AC motor 1 toward the inverter device 2, the upper arm side of the phase is refluxed, and a synchronous rectification operation is performed. By feeding back the information of the current detector 4 to the driving device 6, the dead time of the synchronous rectification side arm can be varied.
  • the output of the current detector 4 may be input to the control circuit 7 as a feedback signal (FB) as shown in FIG.
  • FB feedback signal
  • the control circuit 7 instructs the drive device 6 to change the dead time.
  • the dead time before turn-on DT1 'and the post-turn-off dead time DT2' at the time of synchronous rectification may be set in advance, and switched to DT1 and DT2 at the normal time using an instruction from the control circuit 7 as a trigger.
  • the return of the arm is detected by a signal fed back from the detector, and it is detected whether or not the synchronous rectification is performed, and according to the detection result, the dead time is set at the timing of FIG. Perform switching operation.
  • FIG. 9 shows a configuration example of a power conversion apparatus according to the second embodiment of the present invention.
  • the current detector 4 is used to determine which side of the upper and lower arms performs the synchronous rectification operation.
  • an example using the voltage detector 8 is shown. .
  • the voltage detector 8 detects the drain-source voltage Vds of the SiC-MOSFET 5.
  • the current detector 8 is illustrated only in the upper and lower arms of the W phase, but may be provided in other U and V phases.
  • the synchronous rectification operation is performed only when the SiC-MOSFET during reflux is conducting reverse conduction. Therefore, current flows from the source to the drain, and the drain-source voltage Vds is a negative value.
  • the information of the voltage detector 8 is fed back to the driving device, so that the arm that becomes the synchronous rectification is determined and the dead time is varied.
  • the current detector 4 and the voltage detector 8 can be built in the inverter device 2 and configured as an integral module. Alternatively, the current detector 4 and the voltage detector 8 can be arranged outside the inverter device 2, for example, on the AC motor 1 side. As described with reference to FIG. 2, when the gate driver 6 and the control circuit 7 are part of the inverter device 2 and have an integral module configuration, and the current detector 4 and the voltage detector 8 are arranged outside the module.
  • the module need only have an input terminal 10 for receiving feedback signals from these detectors.
  • the present invention is not limited to the above-described embodiment, and includes various modifications.
  • a part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment.
  • the present invention can be used in the field of power conversion devices and control methods.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)

Abstract

L'invention concerne un dispositif onduleur équipé d'éléments de commutation à semiconducteur à grande distance d'isolement dans les branches supérieur et inférieur, dans lequel le temps mort qui survient lorsqu'un redressement synchrone est effectué est rendu variable, de sorte que le temps mort (DT1') d'une branche sur le côté où est effectué le redressement synchrone avant une mise sous tension est réglé pour être plus court que le temps mort (DT1) qui survient lorsque le redressement synchrone n'est pas effectué, et le temps mort (DT2') après une mise hors tension est réglé pour être plus long que le temps mort (DT2) qui survient lorsque le redressement synchrone n'est pas effectué, ce qui permet d'obtenir un dispositif de conversion d'énergie ayant un excellent rendement.
PCT/JP2014/072461 2014-08-27 2014-08-27 Dispositif de conversion d'énergie, dispositif à moteur, et module onduleur WO2016030998A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2014/072461 WO2016030998A1 (fr) 2014-08-27 2014-08-27 Dispositif de conversion d'énergie, dispositif à moteur, et module onduleur
JP2016545149A JP6167244B2 (ja) 2014-08-27 2014-08-27 電力変換装置、モータ装置および逆変換器モジュール

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PCT/JP2014/072461 WO2016030998A1 (fr) 2014-08-27 2014-08-27 Dispositif de conversion d'énergie, dispositif à moteur, et module onduleur

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WO2016030998A1 true WO2016030998A1 (fr) 2016-03-03

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020072569A (ja) * 2018-10-31 2020-05-07 株式会社日立製作所 電力変換装置
JP2022078997A (ja) * 2017-02-24 2022-05-25 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
JP2022129823A (ja) * 2021-02-25 2022-09-06 株式会社デンソー ゲート駆動装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008211703A (ja) * 2007-02-28 2008-09-11 Hitachi Ltd 半導体回路
JP2011036020A (ja) * 2009-07-31 2011-02-17 Daikin Industries Ltd 電力変換装置
JP2013017294A (ja) * 2011-07-04 2013-01-24 Honda Motor Co Ltd スイッチング回路の制御装置
JP2014007856A (ja) * 2012-06-25 2014-01-16 Mitsubishi Electric Corp 送風機

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008211703A (ja) * 2007-02-28 2008-09-11 Hitachi Ltd 半導体回路
JP2011036020A (ja) * 2009-07-31 2011-02-17 Daikin Industries Ltd 電力変換装置
JP2013017294A (ja) * 2011-07-04 2013-01-24 Honda Motor Co Ltd スイッチング回路の制御装置
JP2014007856A (ja) * 2012-06-25 2014-01-16 Mitsubishi Electric Corp 送風機

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022078997A (ja) * 2017-02-24 2022-05-25 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
US11682723B2 (en) 2017-02-24 2023-06-20 Mitsubishi Electric Corporation Silicon carbide semiconductor device and power converter
JP7357713B2 (ja) 2017-02-24 2023-10-06 三菱電機株式会社 炭化珪素半導体装置および電力変換装置
JP2020072569A (ja) * 2018-10-31 2020-05-07 株式会社日立製作所 電力変換装置
JP7140635B2 (ja) 2018-10-31 2022-09-21 株式会社日立製作所 電力変換装置
JP2022129823A (ja) * 2021-02-25 2022-09-06 株式会社デンソー ゲート駆動装置
JP7586730B2 (ja) 2021-02-25 2024-11-19 株式会社デンソー ゲート駆動装置

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