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WO2018155421A1 - Procédé de formation de film de résine et dispositif de dépôt de film de résine - Google Patents

Procédé de formation de film de résine et dispositif de dépôt de film de résine Download PDF

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Publication number
WO2018155421A1
WO2018155421A1 PCT/JP2018/005939 JP2018005939W WO2018155421A1 WO 2018155421 A1 WO2018155421 A1 WO 2018155421A1 JP 2018005939 W JP2018005939 W JP 2018005939W WO 2018155421 A1 WO2018155421 A1 WO 2018155421A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
mask
substrate
resin
resin material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/005939
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English (en)
Japanese (ja)
Inventor
信 青代
健介 清
高橋　明久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2019501331A priority Critical patent/JP6713087B2/ja
Priority to CN201880004427.5A priority patent/CN110023529B/zh
Priority to KR1020197012360A priority patent/KR102249249B1/ko
Publication of WO2018155421A1 publication Critical patent/WO2018155421A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
    • B05C9/12—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed after the application
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0005—Separation of the coating from the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • C08J7/123—Treatment by wave energy or particle radiation

Definitions

  • the present invention relates to a resin film forming method and a resin film forming apparatus capable of easily removing a resin material film formed on a mask in a reduced pressure atmosphere.
  • a vapor deposition polymerization method or an ultraviolet curing method is widely used as a method for producing a resin film made of a polymer organic material.
  • a low molecular organic gas is introduced into a decompressed treatment tank, the resin material supplied onto the object to be polymerized undergoes a polymerization reaction, and a polymer resin film is formed on the object to be processed.
  • the method has a feature that the coverage (coverage) of the resin film on the surface of the object to be processed is good.
  • Patent Document 1 discloses a film forming apparatus suitable for this.
  • FIG. 7 is a flowchart showing a conventional method for forming a resin film, and shows a case where an acrylic resin film F is formed as a representative example of a resin film using a metal mask MY.
  • the substrate S is moved into the deposition chamber (SY1, SY2).
  • a metal mask MY provided with a desired opening is placed on the film forming surface of the substrate S (SY3).
  • the deposition surface of the substrate S at the position of the opening is exposed as shown in FIG.
  • an acrylic material film f as a representative example of the resin material film is formed on the substrate S through the metal mask MY (SY4).
  • the acrylic material film f includes a portion f1 that covers the substrate S and a portion f2 that covers the metal mask MY.
  • the acrylic material film f is irradiated with ultraviolet rays (UV) to cure the acrylic material film f to form an acrylic resin film F (SY5).
  • the metal mask MY is peeled from the substrate S by moving the metal mask MY in the direction of the arrow (SY6).
  • the metal mask MY is cleaned and reused after a single film formation or after being used a plurality of times by changing the substrate (a plurality of film formations are performed).
  • the removal of the acrylic resin film F deposited on the metal mask MY has been performed by a method of removing the metal mask MY from the inside of the acrylic resin film forming apparatus to the outside and performing a wet etching process. Therefore, development of an acrylic resin film forming method and an acrylic resin film forming apparatus that can easily remove the acrylic resin film formed on the mask inside the film forming apparatus in a reduced pressure atmosphere has been expected.
  • the present invention has been made in view of the circumstances described above, and a resin film is not formed on the metal mask, and the resin film forming method and the resin film can be repeatedly used without removing the metal mask from the film forming apparatus and cleaning it.
  • An object of the present invention is to provide a film forming apparatus. It is an object of the present invention to provide a resin film forming method and a resin film forming apparatus in which a resin film is not formed on a mask inside a film forming apparatus in a reduced pressure atmosphere.
  • the method for forming a resin film according to the first aspect of the present invention is a method for forming a resin film on a substrate in a reduced-pressure atmosphere using a mask having a mask body made of a metal material and having a predetermined opening.
  • the mask In a reduced-pressure atmosphere, the mask is provided so as to be in contact with the substrate (film formation surface) placed on a cooled support table, and the vaporized resin material is supplied through the mask to be condensed on the substrate.
  • the heat treatment in the third step may be a heating temperature increase for the mask using a heating device.
  • the heat treatment in the third step may be performed by natural temperature increase due to the mask being separated from the support base.
  • the mask in the heat treatment in the third step, is separated from the support base and heated by radiant heat from a heated chamber or shower plate. Good.
  • a resin film forming apparatus is an apparatus for forming a resin film on a substrate in a reduced-pressure atmosphere using a mask having a mask body made of a metal material and having a predetermined opening.
  • the substrate supporting part includes a temperature control device for supplying the vaporized resin material, which is the material of the resin film, onto the substrate and condensing it to form the resin material film, which keeps the substrate in a temperature band of zero degrees or less.
  • the mechanism for heat-treating the resin material film may be a heating apparatus that promotes an increase in the temperature of the mask.
  • the mechanism for heat-treating the resin material film may be a moving device for separating the mask from a support base.
  • the mechanism for heat-treating the resin material film may be a chamber heating apparatus for housing the substrate.
  • the method for forming a resin film according to an aspect of the present invention is a state in which, in the third step, before the resin material film formed on the substrate is irradiated with UV light, the resin film is placed on a support base in a temperature range of zero degrees or less.
  • the mask is peeled from the substrate, and the resin material film on the mask is heat-treated to evaporate the resin material film.
  • every time the resin material film is formed in the film forming chamber in a reduced pressure atmosphere all the resin material film covering the mask is removed from the mask. For this reason, a resin film is not formed on the mask even after UV irradiation.
  • an aspect of the present invention provides a method for forming a resin film that can reduce costs and simplify operations in forming a resin film using a mask.
  • a film forming apparatus for a resin film including: a support portion for the substrate containing a temperature control device for maintaining the substrate in a temperature band of zero degrees or less when forming the resin material film in a reduced pressure atmosphere; A mechanism for peeling off the mask from the substrate placed on the support portion and heat-treating the resin material film on the mask before irradiating the material film with UV light. Yes.
  • the resin material film covering the mask can be removed from the mask. Therefore, according to the present invention, it is basically unnecessary to remove the mask from the inside of the resin film forming apparatus to the outside and perform a wet etching process or the like.
  • the resin film deposition apparatus provides a resin film deposition apparatus that can reduce the cost and simplify the operation in forming a resin film using a mask.
  • Such a resin film is preferably used for, for example, a sealing film of an organic EL display or a flexible display.
  • FIG. 1 it is sectional drawing which shows the state which has arrange
  • FIG. 7 it is sectional drawing before arrange
  • FIG. 1 is a flowchart showing a process for producing an acrylic resin film according to an embodiment of the present invention, and the method for forming an acrylic resin film is composed of eight processes SB1 to SB8.
  • Steps SB1 to SB2 are operations related to substrate pretreatment and substrate movement.
  • steps SB3 to SB7 the metal mask is placed on the substrate before the acrylic material film is formed, the acrylic material film is formed, the metal mask is peeled off the substrate, only the metal mask is heated (the acrylic material on the metal mask is evaporated),
  • Each of the operations of forming an acrylic resin film by irradiating the acrylic material film on the substrate with UV is performed in a film forming chamber (depressurized atmosphere).
  • Step SB8 is to move the substrate out of the deposition chamber.
  • the wet for removing the acrylic resin attached to the mask by removing the mask from the inside to the outside of the film forming apparatus of the acrylic resin film which is essential in the conventional manufacturing method. There is no need to perform an etching process or the like. For this reason, in the formation of the acrylic resin film using the mask, it is possible to reduce the cost and simplify the operation.
  • FIG. 2 is a cross-sectional view showing a state in which the metal mask MB used in the embodiment of the present invention is arranged on the substrate S.
  • FIG. 3 is a cross-sectional view showing a state in which the acrylic material film f is formed on the substrate S through the metal mask MB.
  • FIG. 4 is a cross-sectional view showing a state where the metal mask MB is peeled from the substrate S after the acrylic material film f is formed and before UV irradiation.
  • FIG. 5 is a cross-sectional view showing a state in which after the acrylic material film f2 on the mask MB is evaporated, the acrylic material film f1 on the substrate S is irradiated with UV to cure the acrylic material film f1 and form an acrylic resin film F1. It is.
  • the mask body of the metal mask MB is made of a metal material such as Invar material or stainless steel, for example.
  • the vaporized acrylic material is supplied to the substrate S through a predetermined opening W provided in the mask main body, and condensed on the substrate S, so that the acrylic material film f is formed on the substrate S.
  • the acrylic resin film is not formed on the substrate S in the region where the mask main body exists at the time of film formation, and the acrylic resin is formed on the substrate S in the region where the opening W exists. A film is formed.
  • the substrate S is formed with a light emitting element and a protective film made of an inorganic material or the like.
  • This series of operations is substrate pretreatment (step SB1).
  • the substrate that has been subjected to the pretreatment is moved into a film formation chamber in which the metal mask MB is disposed in advance (step SB2).
  • the film formation chamber in which the substrate has moved is made into a reduced pressure atmosphere by a vacuum exhaust device.
  • the substrate S is placed on a support base in a temperature zone below the condensing temperature of the resin material, for example, below zero degrees, and then a metal mask MB is disposed so as to contact the film formation surface of the substrate.
  • Step SB3 The vaporized acrylic material is supplied through the metal mask MB, condensed on the substrate S, and an acrylic material film f is formed on the substrate S (step SB4).
  • Step SB3 and step SB4 are step ⁇ and are performed in a film formation chamber (depressurized atmosphere).
  • the temperature range below zero degrees is a numerical value determined by the vaporization temperature of the acrylic material used.
  • the temperature is preferably zero degrees (0 ° C.) or less, for example, in the range of about ⁇ 30 ° C. to 0 ° C.
  • step SB5 the metal mask MB after the formation of the acrylic material film f is peeled from the substrate S in the direction of the arrow (step SB5).
  • the metal mask MB is in a state where the acrylic material film f2 is attached so as to cover the upper surface thereof. Since the UV light is not irradiated, the acrylic material film f2 covering the upper surface of the metal mask MB is in an uncured state.
  • step ⁇ which is performed in the deposition chamber (depressurized atmosphere).
  • Step ⁇ This heating is performed by a mechanism for heat-treating the acrylic material film f2 on the metal mask MB.
  • the mechanism for heat-treating the acrylic material film f2 is any one or a combination of a heating device for increasing the temperature of the metal mask MB and a moving device for separating the metal mask MB from the support base. Are preferably used.
  • Examples of the heating device that promotes the temperature increase (temperature increase) of the metal mask MB include a heater that directly contacts the metal mask MB, a lamp that indirectly irradiates the metal mask MB, and the like.
  • the heating device there is an advantage that the amount of heat applied per unit time can be freely controlled with respect to the acrylic material film f2 (f) covering the metal mask MB.
  • the heating device for example, by adopting a temperature increase profile corresponding to the evaporation temperature of the substance constituting the acrylic material film f, the acrylic material film f2 covering the metal mask MB undergoes a phase transition from liquid to gas. Therefore, the acrylic material film f2 is removed from the metal mask MB. At that time, the acrylic material film f1 remaining on the substrate S is not affected at all.
  • Examples of the moving device that separates the metal mask MB from the support base include lifting pins, robot hands, and suction device means that can operate in a reduced pressure atmosphere.
  • the substrate S during the formation of the acrylic material film f is in a state of being placed on a support base in a temperature zone of zero degrees or less, the acrylic material film formed on the substrate S The temperature of f is also maintained in a temperature range of zero degrees or less.
  • the substance constituting the acrylic material film for example, a substance that evaporates at a temperature of zero degrees or higher is employed.
  • the acrylic material film f2 covering the metal mask MB undergoes a phase transition from a liquid to a gas only by separating the metal mask MB from the support base, so that the acrylic material film f2 is removed from the metal mask MB.
  • the acrylic film F1 remaining on the substrate S is not affected at all.
  • the chamber of the film forming apparatus and the shower plate disposed facing the substrate S are heated so that the acrylic material does not adhere.
  • the metal mask MB is heated by the radiant heat from the surrounding chambers and shower plates only by separating from the substrate S being cooled.
  • the “mechanism for heat-treating the acrylic material film f2” in the embodiment of the present invention is a mechanism for evaporating a substance constituting the acrylic material film.
  • the acrylic material film f2 covering the metal mask MB can be easily removed from the metal mask MB in the film forming chamber (depressurized atmosphere).
  • the above is the process ⁇ and is performed in the film formation chamber (depressurized atmosphere). Therefore, the metal mask MB from which the acrylic material film f2 has been removed can be placed on a new substrate in the next film formation batch without being taken out of the film formation chamber, and can be used for forming a new acrylic film. Become.
  • step ⁇ the acrylic material film f1 (f) remaining on the substrate S is irradiated with UV light, and the acrylic material film f1 is cured to form an acrylic resin film F.
  • Step SB7 This step is performed in a deposition chamber (reduced pressure atmosphere).
  • the acrylic material film f2 that previously covered the metal mask MB peeled off from the substrate S has evaporated from the metal mask MB in the above-described step ⁇ , and the metal mask is subjected to the step ⁇ .
  • the acrylic material film f2 does not exist on the MB. Therefore, an acrylic resin film is not formed on the metal mask MB.
  • FIG. 12 shows a liquid resin material film formed on a substrate S by supplying the resin material to the substrate S by using the metal mask MB according to the embodiment of the present invention described above, and the resin material film is polymerized.
  • 1 is a configuration example of a film forming apparatus 100 for forming a resin film.
  • the film forming apparatus 100 includes a chamber 110 whose internal space can be decompressed, and a vaporizer 300 that supplies the vaporized resin material to the chamber 110 (processing chamber).
  • the internal space of the chamber 110 is composed of an upper space 107 and a lower space 108 as will be described later.
  • An unillustrated evacuation device (evacuation means, vacuum pump, etc.) is connected to the chamber 110, and the evacuation device can evacuate the gas in the internal space so that the internal space of the chamber 110 becomes a vacuum atmosphere. It is configured.
  • a shower plate 105 is arranged in the internal space of the chamber 110, and an upper space 107 is formed above the shower plate 105 in the chamber 110.
  • a top plate 120 made of a material capable of transmitting ultraviolet light is provided at the top of the chamber 110, and an ultraviolet light irradiation device 122 (UV irradiation device) is disposed above the top plate 120.
  • the shower plate 105 is also formed of a member that can transmit ultraviolet light, so that the ultraviolet light that has passed through the top plate 120 from the irradiation device 122 and introduced into the upper space 107 further passes through the shower plate 105, It becomes possible to proceed to the lower space 108 located below the shower plate 105.
  • an acrylic material film formed on the substrate S which will be described later, is irradiated with ultraviolet light after film formation, the acrylic material film (resin material film) is cured, and an acrylic resin film (resin film) is formed. It is possible.
  • the vaporized resin material adheres to the substrate S through the opening (not shown) of the metal mask MA disposed on the film formation surface of the substrate S.
  • the temperature of the substrate S is controlled to be equal to or lower than the condensation temperature of the resin material by the cooling device 102a built in the stage 102 on which the substrate S is placed. Therefore, a condensed liquid acrylic material film can be formed on the substrate S. Therefore, in the manufacturing apparatus 100 according to an embodiment of the present invention, it is preferable that the stage 102 that is a support base on which the substrate S is placed hold the substrate S in a temperature range of zero degrees or less.
  • the film forming apparatus 100 shown in FIG. 12 is an example of an embodiment of the present invention.
  • Other configurations may be adopted as long as the stage 102 that is a support table on which the substrate S is placed incorporates a cooling device 102a that is a temperature control device that cools and holds the substrate S.
  • a cooling device 102a that is a temperature control device that cools and holds the substrate S.
  • the shower plate 105 it is not necessary to arrange the shower plate 105 in the internal space of the chamber 110.
  • the chamber 110 is provided with a heating device (not shown).
  • the temperature of the inner wall surface of the chamber 110 constituting the upper space 107 and the lower space 108 can be set to be equal to or higher than the dew point temperature of the resin material, preferably about 40 to 250 ° C., and is controlled by a heating device.
  • stage 102 substrate holding part on which the substrate S on which the acrylic resin film is formed is placed.
  • stage 102 the position where the substrate is to be placed on the surface is predetermined.
  • the stage 102 is disposed in the chamber 110 with its surface exposed.
  • Reference numeral S denotes a substrate disposed at a predetermined position on the surface of the substrate stage 102.
  • the stage 102 is provided with a substrate cooling device 102a for cooling the substrate S.
  • the substrate cooling device 102 a supplies a coolant into the stage 102 to cool the substrate S on the upper surface of the stage 102.
  • the temperature of the substrate S is controlled by a cooling device 102a built in the stage 102 (substrate holding unit) on which the substrate S is placed, and is equal to or lower than the vaporization temperature of the resin material, preferably zero degrees (0 ° C.) or less.
  • the temperature is controlled to about ⁇ 30 ° C. to 0 ° C.
  • a shower plate 105 is provided on the upper surface of the stage 102 with respect to the entire surface of the stage 102.
  • the shower plate 105 is composed of a plate-like member made of an ultraviolet light transmitting material such as quartz provided with a large number of through holes, and divides the internal space of the chamber 110 into an upper space and a lower space.
  • a mask (not shown) is provided in the lower space 108, and the position of this mask can be set to a predetermined position during film formation.
  • the lower space 108 is provided with a mask raising / lowering mechanism (not shown).
  • the upper space 107 of the chamber 110 communicates with the vaporizer 300 via a pipe 112 (resin material supply pipe) and a valve 112V.
  • the vaporized resin material can be supplied to the upper space 107 of the chamber 110 through the resin material supply pipe 112.
  • One end of a resin material bypass pipe 113 (second pipe) having a valve 113V is connected to a position closer to the vaporizer 300 than the valve 112V of the resin material supply pipe 112 (first pipe).
  • the other end of the resin material bypass pipe 113 (second pipe) is connected to the outside through an exhaust pipe 114, and gas can be exhausted through the resin material bypass pipe 113.
  • the opening / closing drive of the valve 112V and the valve 113V is controlled by the control unit 400.
  • the control unit 400 has a film forming state in which the vaporized resin material from the vaporizer 300 is supplied into the chamber 110, and a non-generated state in which the vaporized resin material from the vaporizer 300 is exhausted to the outside and not supplied into the chamber 110.
  • the film state is controlled to be switchable.
  • the valve 112V, the valve 113V, and the control unit 400 constitute a switching unit having a selection function of supplying a resin material into the chamber 110 or exhausting the resin material to the outside of the chamber 110.
  • the vaporizer 300 can supply the vaporized resin material to the chamber 110. As illustrated in FIG. 12, the vaporizer 300 includes a vaporization tank 130, a discharge unit 132, and a resin material raw material container 150.
  • the vaporization tank 130 has an internal space for vaporizing the liquid resin material, and a discharge part 132 for spraying the liquid resin material is disposed above the internal space.
  • the vaporization tank 130 is formed in a substantially cylindrical shape, but may have other cross-sectional shapes.
  • the inner surface of the vaporization tank 130 can be made of, for example, SUS or aluminum.
  • a resin material liquid supply pipe 140 connected to the resin material raw material container 150 via a valve 140V and a carrier gas supply pipe 130G for supplying a carrier gas such as nitrogen gas.
  • the other end of the resin material liquid supply pipe 140 is connected to the resin material raw material container 150 and is located inside the liquid resin material stored in the resin material raw material container 150.
  • a pressurized gas supply pipe 150G for supplying a material liquid such as nitrogen gas is connected to the resin material raw material container 150, and the liquid resin material pressurized by increasing the internal pressure of the resin material raw material container 150 is a resin.
  • the liquid can be supplied to the material liquid supply pipe 140.
  • the discharge unit 132 is configured to spray the liquid resin material supplied from the resin material liquid supply pipe 140 into the internal space of the vaporization tank 130 together with the carrier gas.
  • the discharge part 132 is provided in the approximate center position of the top part of the vaporization tank 130.
  • the vaporizing tank 130 is provided with a heating unit 135 at a lower position of the vaporizing tank 130.
  • the heating unit 135 is arranged so as to divide the internal space into an upper space and a lower space, a vaporization space is formed above the heating unit 135, and a storage unit is formed below.
  • the heating unit 135 is provided below the discharge unit 132 and heats and vaporizes the liquid resin material sprayed from the discharge unit 132.
  • the internal pressure of the resin material raw material container 150 is increased, and the liquid resin material supplied from the resin material liquid supply pipe 140 is sprayed from the discharge unit 132 to the internal space of the vaporization tank 130 together with the carrier gas. At this time, the resin material and the carrier gas supplied to the discharge unit 132 can be further heated.
  • the resin material sprayed into the internal space of the vaporizing tank 130 together with the carrier gas from the discharge unit 132 is vaporized inside the heated vaporizing tank 130.
  • the control unit 400 opens the valve 112V so that gas can flow into the chamber 110 and closes the valve 113V. Then, the resin material bypass pipe 113 (second pipe) is in a state where gas cannot flow in. Thereby, the vaporized resin material is supplied to the chamber 110, and the film formation process can be performed.
  • the film forming apparatus 100 performs, for example, film formation of a resin material that is an ultraviolet curable acrylic resin having a vaporization temperature of about 40 ° C. to 250 ° C., and ultraviolet irradiation for curing the formed resin material. It is configured to be possible in the same chamber 110. Thereby, it becomes possible to perform any processing process with the same apparatus structure, and it can improve productivity.
  • a resin material that is an ultraviolet curable acrylic resin having a vaporization temperature of about 40 ° C. to 250 ° C.
  • the present invention can be widely applied to a method for forming a resin film and a manufacturing apparatus having a configuration effective in forming a resin.
  • the present invention is suitably used, for example, when a resin film is produced as a sealing film for an organic EL display or a flexible display.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Electroluminescent Light Sources (AREA)
  • General Chemical & Material Sciences (AREA)

Abstract

Selon la présente invention, ce procédé de formation de film de résine utilise un masque, le corps principal de masque étant formé d'un matériau métallique et ayant des ouvertures prescrites, et il permet de former un film de résine sur un substrat dans une atmosphère sous pression réduite, par le biais des étapes suivantes : une première étape dans laquelle un masque est mis en contact avec un substrat disposé sur une base de support refroidie dans une atmosphère sous pression réduite, un matériau de résine à l'état gazeux est fourni à travers ledit masque et condensé sur le substrat pour former un film de matériau de résine liquide sur le substrat ; une deuxième étape dans laquelle le masque est séparé du substrat ; une troisième étape dans laquelle le film de matériau de résine sur le masque est traité thermiquement et ledit film de matériau de résine est évaporé ; et une quatrième étape dans laquelle le film de matériau de résine restant sur le substrat est irradié avec une lumière UV et durci pour former le film de résine.
PCT/JP2018/005939 2017-02-21 2018-02-20 Procédé de formation de film de résine et dispositif de dépôt de film de résine Ceased WO2018155421A1 (fr)

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JP2019501331A JP6713087B2 (ja) 2017-02-21 2018-02-20 樹脂膜の形成方法および樹脂膜の成膜装置
CN201880004427.5A CN110023529B (zh) 2017-02-21 2018-02-20 树脂膜的形成方法及树脂膜的成膜装置
KR1020197012360A KR102249249B1 (ko) 2017-02-21 2018-02-20 수지막의 형성 방법 및 수지막의 성막 장치

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CN113563116B (zh) * 2021-07-21 2022-12-02 佛山欧神诺陶瓷有限公司 一种复合陶瓷砖及其制备方法与应用

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JP4112702B2 (ja) * 1998-09-11 2008-07-02 株式会社アルバック 成膜装置
JP2013129866A (ja) * 2011-12-20 2013-07-04 Ulvac Japan Ltd 薄膜製造方法、薄膜製造装置
JP2016130347A (ja) * 2015-01-14 2016-07-21 大日本印刷株式会社 蒸着パターン形成方法、有機半導体素子の製造方法、及び蒸着装置

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WO2012053532A1 (fr) * 2010-10-20 2012-04-26 株式会社アルバック Appareil pour formation de film organique et procédé pour formation de film organique
KR102078888B1 (ko) * 2011-09-16 2020-02-19 브이 테크놀로지 씨오. 엘티디 증착 마스크, 증착 마스크의 제조 방법 및 박막 패턴 형성 방법
JP6191711B2 (ja) * 2016-03-02 2017-09-06 大日本印刷株式会社 蒸着マスク、蒸着マスク装置、及び有機エレクトロルミネッセンス素子の製造方法

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WO2003085157A1 (fr) * 2002-04-05 2003-10-16 Matsushita Electric Industrial Co., Ltd. Procede et dispositif pour preparer un film de resine mince
JP2013129866A (ja) * 2011-12-20 2013-07-04 Ulvac Japan Ltd 薄膜製造方法、薄膜製造装置
JP2016130347A (ja) * 2015-01-14 2016-07-21 大日本印刷株式会社 蒸着パターン形成方法、有機半導体素子の製造方法、及び蒸着装置

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CN113039308A (zh) * 2019-02-25 2021-06-25 株式会社爱发科 成膜装置

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KR20190058598A (ko) 2019-05-29
JP6713087B2 (ja) 2020-06-24
CN110023529A (zh) 2019-07-16
CN110023529B (zh) 2022-03-04
JPWO2018155421A1 (ja) 2019-11-07

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