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WO2018155425A1 - Procédé de fabrication d'une structure d'élément - Google Patents

Procédé de fabrication d'une structure d'élément Download PDF

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Publication number
WO2018155425A1
WO2018155425A1 PCT/JP2018/005953 JP2018005953W WO2018155425A1 WO 2018155425 A1 WO2018155425 A1 WO 2018155425A1 JP 2018005953 W JP2018005953 W JP 2018005953W WO 2018155425 A1 WO2018155425 A1 WO 2018155425A1
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WO
WIPO (PCT)
Prior art keywords
layer
resin material
substrate
film
inorganic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/005953
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English (en)
Japanese (ja)
Inventor
健介 清
信 青代
高橋　明久
貴浩 矢島
裕子 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to KR1020197009521A priority Critical patent/KR102186663B1/ko
Priority to JP2019501332A priority patent/JP6799134B2/ja
Priority to CN201880003963.3A priority patent/CN109892012B/zh
Publication of WO2018155425A1 publication Critical patent/WO2018155425A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to a method for manufacturing an element structure, and more particularly to an element structure having a laminated structure that protects a device and the like from oxygen, moisture, and the like, and a suitable technique using the method for manufacturing the element structure.
  • an organic EL (Electro Luminescence) element or the like is known as an element including a compound that easily deteriorates due to moisture or oxygen.
  • Patent Document 1 described below describes a light-emitting element that includes a protective film formed of a laminated film of an inorganic film and an organic film on an upper electrode layer.
  • the coverage characteristic (step coverage) of an inorganic film having a barrier property against water vapor or the like is relatively low, and if the substrate surface having a device layer has irregularities, the inorganic film cannot sufficiently cover the irregularities. For example, there may be a coating failure in which the uneven boundary formed on the substrate surface is not covered with the inorganic film. When such a coating failure of the inorganic film occurs, it becomes impossible to prevent moisture from entering from the location where the coating failure has occurred, and thus it becomes difficult to ensure a sufficient barrier property.
  • the present invention has been made in view of the above circumstances, and intends to achieve at least one of the following objects. 1. Prevent deterioration of barrier properties in thin film encapsulation. 2. The barrier property against water vapor and the like in the protective film can be reliably improved. 3. To provide an element structure capable of enhancing barrier properties against water vapor and the like, and a method for manufacturing the element structure.
  • the element structure manufacturing method includes a resin material forming step of forming a resin material made of an organic substance on a substrate having projections and depressions so that at least the periphery of the projection is thicker than the flat portion, A resin material etching step of leaving a part of the resin material located around the convex portion and removing the resin material of the flat portion, wherein the resin material etching step is a condition for etching the resin material Among these, the change of a specific condition is detected, and the detected problem is solved by using the detected result as the end point of the etching process.
  • the change in the specific condition is more preferably a change in a bias voltage applied to the substrate.
  • One embodiment of the present invention can further include an inorganic film forming step of forming an inorganic material layer made of an inorganic material on the substrate on which the resin material remains after the resin material etching step.
  • the method for manufacturing an element structure it is possible to accurately remove the resin material, and unnecessary portions of the resin material can be removed without causing unnecessary damage to the lower layer. It is possible to easily remove and localize only necessary portions.
  • the change in the specific condition is a change in the bias voltage applied to the substrate, it is accurately determined that an unnecessary portion of the resin material on the substrate has been removed, and an etching process is performed. It is complete
  • One aspect of the present invention further includes an inorganic film forming step of forming an inorganic material layer made of an inorganic material on the substrate where the resin material remains after the resin material etching step. Without unnecessary damage, after unnecessary portions of the resin material are removed and only necessary portions are localized, sealing with the inorganic material layer can be easily performed.
  • a resin film can be etched without excess or deficiency. Since the resin material can be left only in a necessary portion, the sealing performance of the inorganic film formed on the remaining resin material is improved.
  • FIG. 1 is a schematic diagram showing a manufacturing apparatus in the method for manufacturing an element structure according to the present embodiment.
  • FIG. 2 is a schematic diagram illustrating a resin film forming unit according to the present embodiment.
  • FIG. 3 is a schematic diagram showing a localization processing unit of the device structure manufacturing apparatus according to the present embodiment.
  • reference numeral 1000 denotes a device structure manufacturing apparatus.
  • the element structure manufacturing apparatus 1000 manufactures an element structure such as an organic EL element, as will be described later.
  • the manufacturing apparatus 1000 includes a first layer forming unit 201, a resin film forming unit 100, a localization processing unit 202, a second layer forming unit 203, and a functional layer that becomes an organic EL layer.
  • the functional layer forming unit 204 for forming the core, the core chamber 200, and a load lock chamber 210 connected to the outside.
  • the core chamber 200 is connected to the first layer forming unit 201, the resin film forming unit 100, the localization processing unit 202, the second layer forming unit 203, the functional layer forming unit 204, and the load lock chamber 210.
  • a substrate transferred from another device or the like to the element structure manufacturing apparatus 1000 is inserted.
  • a substrate transfer robot (not shown) is disposed in the core chamber 200.
  • the core chamber 200, the film forming chambers 100, 201, 202, 203, 204 and the load lock chamber 210 constitute a vacuum chamber to which a vacuum exhaust system (not shown) is connected.
  • each manufacturing process can be automated, and at the same time, efficient manufacturing can be performed using a plurality of film formation chambers. It is possible to improve productivity.
  • the first layer forming portion 201 covers the functional layer 3 disposed on the one surface side 2a of the substrate 2 in the element structure 10 to be described later, and has a local convex portion, such as silicon nitride (SiN x ).
  • the first layer 41 made of the inorganic material is formed.
  • the first layer formation unit 201 is a film formation chamber in which the first layer 41 is formed by, for example, a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like.
  • the functional layer forming unit 204 forms the functional layer 3 in the element structure 10 described later. Note that the functional layer forming unit 204 may be provided outside the load lock chamber 210.
  • the second layer forming unit 203 forms a second layer 42 made of an inorganic material like the first layer 41 so as to cover the first layer 41 and the resin material 51 in the element structure 10 to be described later. It is a room.
  • the 2nd layer 42 and the 1st layer 41 consist of the same material
  • the 2nd layer formation part 203 and the 1st layer formation part 201 are set as the same structure, or one film-forming chamber ( The second layer 42 and the first layer 41 can also be formed using a common film formation chamber.
  • the forming units 201 and 203 and the film forming chamber are In addition to the functions described above, the functions of the localization processing unit 202 described later can be provided.
  • a substrate on which a resin film is formed is loaded into a plasma CVD apparatus, and plasma is generated by introducing an oxidizing gas, thereby etching the resin film and localizing the resin film to form a resin material. it can. Thereafter, the second layer 42 can be formed in the plasma CVD apparatus as it is.
  • the resin film forming unit 100 supplies the vaporized resin material to the inside of the resin film forming unit 100 to form a resin material film 5a made of a resin material on the first layer 41, and cures the resin material film 5a.
  • This is a film forming chamber for forming the resin film 5.
  • the resin film forming unit 100 includes a chamber 110 whose internal space can be decompressed, and a vaporizer 300 that supplies the vaporized resin material to the chamber 110.
  • the internal space of the chamber 110 is composed of an upper space 107 and a lower space 108 as will be described later.
  • An unillustrated evacuation device (evacuation means, vacuum pump, etc.) is connected to the chamber 110, and the evacuation device can evacuate the gas in the internal space so that the internal space of the chamber 110 becomes a vacuum atmosphere. It is configured.
  • a shower plate 105 is disposed in the internal space of the chamber 110, and an upper space 107 is formed above the shower plate 105 in the chamber 110.
  • a top plate 120 made of a material capable of transmitting ultraviolet light is provided at the top of the chamber 110, and an ultraviolet light irradiation device 122 (irradiation means, UV lamp, etc.) is disposed above the top plate 120.
  • the shower plate 105 is also formed of a member that can transmit ultraviolet light, the ultraviolet light introduced from the irradiation device 122 into the upper space 107 further passes through the shower plate 105 and is below the shower plate 105. It is possible to proceed to the lower space 108 located on the side.
  • an acrylic material film 5a (resin material film) formed on the substrate S which will be described later, is irradiated with ultraviolet light after film formation to cure the acrylic material film and form an acrylic resin film 5 (resin film). Is possible.
  • stage 102 substrate holding unit on which the substrate S on which an acrylic film is formed is placed.
  • the chamber 110 is provided with a heating device (not shown).
  • the temperature of the inner wall surface of the chamber 110 constituting the upper space 107 and the lower space 108 is controlled by a heating device so as to be equal to or higher than the vaporization temperature of the resin material, preferably about 40 to 250 ° C.
  • the temperature of the substrate S on which the resin material film is formed is controlled by a cooling device 102a built in the stage 102 (substrate holding unit) on which the substrate S is placed, and is equal to or lower than the vaporization temperature of the resin material, preferably zero degrees (0 ° C. )
  • the temperature is controlled to about ⁇ 30 to 0 ° C.
  • the upper space 107 of the chamber 110 is in communication with the vaporizer 300 via a pipe 112 and a valve 112V. Thereby, the vaporizer 300 can supply the vaporized resin material to the upper space 107 of the chamber 110.
  • the vaporizer 300 includes a vaporization tank 130, a discharge unit 132, and a raw material container 150 made of a resin material. The raw material of the resin material is supplied to the vaporization tank 130 through the pipe 140 and the valve 140V. The vaporizer 300 sprays and heats the resin material from the discharge unit 132 toward the internal space of the vaporization tank 130 to generate a vaporized resin material.
  • the resin material vaporized in the vaporization tank 130 is introduced from the vaporization tank 130 into the upper space 107 of the chamber 110. Further, the vaporized resin material advances from the upper space 107 to the lower space 108 through a large number of fine holes (not shown) provided in the shower plate 105 and reaches the film formation surface (the upper surface in FIG. 12) of the substrate S. .
  • the temperature of the substrate S is controlled to be equal to or lower than the vaporization temperature of the resin material by the cooling device 102a built in the stage 102 on which the substrate S is placed.
  • the resin material film 5a having a good film quality can be formed on the substrate S. Therefore, in the resin film forming unit 100 according to the present embodiment, the stage 102 that is a support table on which the substrate S is placed includes the cooling device 102a that is a temperature control device that holds the substrate S in a temperature band of zero degrees or less. Built-in.
  • the resin film forming unit 100 performs the same film formation of the raw material of the ultraviolet curable acrylic resin having a vaporization temperature of about 40 to 250 ° C. and the ultraviolet irradiation for curing the formed resin material film 5a. This is configured to be possible in the chamber 110. Thereby, it becomes possible to perform any processing process with the same apparatus structure, and it can improve productivity.
  • the resin film forming unit 100 shown in FIG. 2 is an example of an embodiment of the present invention. If the stage 102 which is a support table on which the substrate S is placed has a built-in cooling device 102a which is a temperature control device that holds the substrate S in a temperature range below the condensation temperature of the resin material, for example, below zero degrees, Other configurations may be employed. For example, if the vaporized resin material can proceed (flow) in the plane uniformly toward the substrate S, the shower plate 105 does not need to be disposed in the internal space of the chamber 110. After forming the resin material, the resin material film is irradiated with ultraviolet light, the resin material film 5a is photopolymerized and cured, and after the resin film is formed, the mask M is removed and the substrate S is localized. Move to 220.
  • the localization processing unit 202 As a configuration of the localization processing unit 202, a configuration of a dry etching processing apparatus, particularly a plasma etching processing apparatus can be employed. As shown in FIG. 3, the localization processing unit 202 is a parallel plate type plasma processing apparatus. Specifically, the localization processing unit 202 includes a chamber 222, an electrode 226 provided in the chamber 222 on which the substrate S is placed, a gas introduction pipe 223 that introduces an etching gas into the chamber 222, and an etching gas.
  • a high frequency power source 224 that supplies a high frequency as an energy source, an antenna 225 connected to the high frequency power source 224, a high frequency power source 227 that applies a bias voltage to the electrode 226 in the chamber 222, and a constant pressure in the chamber 222
  • a pressure control valve 228 for maintaining and a bias voltage sensor 229 are provided.
  • an etching gas is introduced into the chamber 222 from the gas introduction pipe 223.
  • a high frequency generated by a high frequency power source 224 as an energy source is incident on the etching gas into the chamber 222 via the antenna 225.
  • the etching gas is irradiated with this high frequency to generate plasma.
  • a bias voltage is applied to the electrode 226 in the chamber 222 from the high-frequency power source 227 and ions existing in the plasma are drawn into the substrate S placed on the electrode 226, the resin formed on the surface of the substrate S
  • the film 5 is etched.
  • the resin film 5 is anisotropically etched by ions in plasma generated from an etching gas such as oxygen.
  • the forming units 201 and 203 have not only a film forming function but also a localization processing unit. 202 functions can also be provided. In this case, for example, the same processing apparatus can be used as the first layer forming unit 201, the second layer forming unit 203, and the localization processing unit 202.
  • the localization processing unit 202 for example, most of the resin film 5 formed on the substrate S is removed by plasma etching using oxygen as an etching gas.
  • This plasma treatment can be performed for a predetermined treatment time according to this time by calculating a treatment time for removing unnecessary portions of the resin film 5 on the substrate S from the film thickness and etching rate of the resin film 5.
  • the bias voltage sensor 229 measures the bias voltage Vpp applied from the high frequency power source 227 to the electrode 226, and the change in the measured value causes the resin film 5 on the substrate S to be changed. It is a detection device that determines that an unnecessary portion has been removed and uses the determination result (detection result) as an end point of the etching process.
  • the bias voltage Vpp measured by the bias voltage sensor 229 during the localization process increases as the processing time elapses as shown in FIG. Further, when the bias voltage Vpp for removing unnecessary portions of the organic thin film 5 on the substrate S calculated from the etching rate is 100%, the bias voltage Vpp is temporarily about 97% as shown in FIG. Constant value. Further, when etching is performed, the bias voltage Vpp increases and then becomes constant.
  • the bias voltage Vpp fluctuated greatly as the unnecessary portion of the organic thin film 5 on the substrate S was removed by the plasma treatment. That is, the presence / absence state of the resin film 5 changes before and after the time when the bias voltage Vpp greatly fluctuates. That is, the time when the resin film 5 is removed in a wide area portion such as a flat portion of the resin film 5, and the time when the removal of the flat portion of the wide area is completed and the resin material is localized and hardly etched. Thus, the bias voltage Vpp changes. This is presumably because the plasma density is high and the bias voltage is difficult to increase because a large amount of gas generated by the etching is contained in the plasma while many etchings are performed.
  • the present inventors confirmed the presence / absence of the resin film 5 (acrylic film) before and after the time when the bias voltage Vpp in plasma etching greatly fluctuated by SEM images. As a result, it was confirmed that the resin film 5 (acrylic film) was present on the flat surface portion of the substrate S before the time when the bias voltage Vpp greatly fluctuated. In addition, after the time when the bias voltage Vpp greatly fluctuated, the resin film 5 (acrylic film) was not present in most portions of the surface of the substrate S except for the portions left to be localized.
  • an unnecessary portion of the resin film 5 on the substrate S is removed by the increase variation in the bias voltage Vpp value in a short time, and can be determined as the end point of the etching process. That is, the point where the bias voltage Vpp rises after it becomes temporarily constant, or within a certain time thereafter can be set as the end point of the etching process.
  • FIG. 4 is a schematic cross-sectional view showing the element structure according to the present embodiment.
  • FIG. 5 is a plan view showing the element structure of FIG.
  • FIG. 6 is an enlarged view showing a main part of the element structure.
  • the X-axis, Y-axis, and Z-axis directions indicate triaxial directions orthogonal to each other.
  • the X-axis and Y-axis directions are orthogonal to each other, and the Z-axis direction is vertical. Show.
  • the element structure 10 includes a substrate 2 including a device layer 3 (functional layer), a silicon nitride layer that is formed on the surface 2a of the substrate 2 and covers the functional layer 3, and has local protrusions.
  • the first inorganic material layer 41 (first layer) made of an inorganic material such as a material (SiN x ) and the second inorganic material in the same manner as the first layer 41 so as to cover the first inorganic material layer 41 A layer 42 (second layer).
  • the element structure 10 includes a light emitting element having an organic EL light emitting layer.
  • the substrate 2 has a front surface 2a (first surface) and a back surface 2c (second surface), and is composed of, for example, a glass substrate or a plastic substrate.
  • substrate 2 is not specifically limited, In this embodiment, it forms in a rectangular shape.
  • substrate 2 are not specifically limited, According to the magnitude
  • a plurality of element structures 10 are manufactured from an assembly of the same elements manufactured on one large substrate S.
  • Device layer 3 (functional layer) is composed of an organic EL light emitting layer including an upper electrode and a lower electrode.
  • the device layer 3 is composed of various functional elements including materials that easily deteriorate due to moisture, oxygen, and the like, such as a liquid crystal layer in a liquid crystal element and a power generation layer in a power generation element. Also good.
  • the device layer 3 is formed in a predetermined region of the surface 2a of the substrate 2.
  • the planar shape of the device layer 3 is not particularly limited and is formed in a substantially rectangular shape in the present embodiment, but other shapes such as a circular shape and a linear shape may be adopted.
  • the device layer 3 is not limited to the example of being disposed on the front surface 2a of the substrate 2, but may be disposed on at least one of the front surface 2a and the back surface 2c of the substrate 2.
  • 1st inorganic material layer 41 (1st layer) is provided in the surface 2a of the board
  • the first inorganic material layer 41 has a three-dimensional structure that protrudes upward in FIG. 6 from the surface 2 a of the substrate 2.
  • the first inorganic material layer 41 is made of an inorganic material capable of protecting the device layer 3 from moisture and oxygen.
  • the first inorganic material layer 41 is composed of silicon nitride (SiN x ) having excellent water vapor barrier properties, but is not limited to this material.
  • the first inorganic material layer 41 may be composed of another silicon compound such as silicon oxide or silicon oxynitride, or another inorganic material having a water vapor barrier property such as aluminum oxide.
  • the first inorganic material layer 41 is formed on the surface 2a of the substrate 2 using an appropriate mask, for example.
  • the first inorganic material layer 41 is formed using a mask having a rectangular opening having a size that can accommodate the device layer 3.
  • the film forming method is not particularly limited, and a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like is applicable.
  • the thickness of the first inorganic material layer 41 is not particularly limited, and is, for example, 200 nm to 2 ⁇ m.
  • the second inorganic material layer 42 is composed of an inorganic material capable of protecting the device layer 3 from moisture and oxygen. It is provided on the surface 2 a of the substrate 2 so as to cover the surface 41 a and the side surface 41 s of the layer 41.
  • the second inorganic material layer 42 is composed of silicon nitride (SiN x ) having excellent water vapor barrier properties, but is not limited to this material.
  • the second inorganic material layer 42 may be composed of another silicon compound such as silicon oxide or silicon oxynitride, or another inorganic material having a water vapor barrier property such as aluminum oxide.
  • the second inorganic material layer 42 is formed on the surface 2a of the substrate 2 using, for example, an appropriate mask.
  • the second inorganic material layer 42 is formed using a mask having a rectangular opening having a size capable of accommodating the first inorganic material layer 41.
  • the film forming method is not particularly limited, and a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like is applicable.
  • the thickness of the second inorganic material layer 42 is not particularly limited, and is, for example, 200 nm to 2 ⁇ m.
  • the element structure 10 according to the present embodiment further includes a first resin material 51.
  • the first resin material 51 is unevenly distributed around the first inorganic material layer 41 (convex portion).
  • the first resin material 51 is interposed between the first inorganic material layer 41 and the second inorganic material layer 42, and the side surface 41 s of the first inorganic material layer 41 and the surface 2 a of the substrate 2. Is unevenly distributed at the boundary 2b.
  • the first resin material 51 has a function of filling the gap G (FIG. 6) between the first inorganic material layer 41 formed in the vicinity of the boundary 2b and the substrate surface 2a.
  • the peripheral structure of the boundary portion 2b in the element structure 10 is shown in an enlarged manner. Since the first inorganic material layer 41 is formed of a CVD film or a sputtered film of an inorganic material, the coverage characteristic with respect to the concavo-convex structure surface of the substrate 2 including the device layer 3 is relatively low. As a result, as shown in FIG. 6, the first inorganic material layer 41 covering the side surface 3s of the device layer 3 has reduced coverage characteristics near the substrate surface 2a, and the coating film thickness is extremely small. There is a risk that the film may be absent.
  • the first resin material 51 is unevenly distributed in the poorly coated region around the first inorganic material layer 41 as described above, so that moisture and oxygen from the poorly coated region to the inside of the device layer 3 can be obtained. To prevent intrusion.
  • the first resin material 51 functions as a base layer of the second inorganic material layer 42, so that the second inorganic material layer 42 is appropriately formed. Therefore, the side surface 41s of the first inorganic material layer 41 can be appropriately covered with a desired film thickness.
  • the first resin material 51 is formed by the resin material vaporized by spray vaporization being supplied to the substrate surface 2a and condensing to form the resin material film 5a, and then curing the resin material film 5a to form the resin film 5. After that, it is formed by a localization process for removing unnecessary portions.
  • 7 to 11 are process diagrams schematically showing a method for forming the first resin material 51 in the element structure manufacturing method according to the present embodiment.
  • the substrate S carried into the core chamber 200 from the load lock chamber 210 is transported from the core chamber 200 to the functional layer forming unit 204 by a substrate transport robot (not shown).
  • the device layer 3 (functional layer) is formed in a predetermined region on the substrate S.
  • the region to be the functional layer 3 is a plurality of regions on the substrate S, for example, four regions arranged at predetermined intervals of two each in the X-axis direction and the Y-axis direction, The region to be the functional layer 3 is used.
  • the method for forming the device layer 3 is not particularly limited, and can be appropriately selected depending on the material, configuration, and the like of the device layer 3.
  • the substrate S is transported to a film forming chamber or the like of the functional layer forming unit 204, and a predetermined material is deposited on the substrate S, sputtered, etc.
  • a desired device layer 3 can be formed.
  • the pattern processing method is not particularly limited, and for example, etching or the like can be employed.
  • the functional layer forming unit 204 includes a large number of processing chambers and includes a transfer device that can transfer the substrate S between adjacent processing chambers.
  • the structure which is not a vacuum apparatus is also employable. In other words, it is not necessary to go through the load lock chamber 210, and processing for the substrate S outside the element structure manufacturing apparatus 1000 can be made possible.
  • the substrate S on which the device layer 3 is formed is unloaded from the functional layer forming unit 204 by a substrate transfer robot (not shown) and is loaded into the first layer forming unit 201 through the core chamber 200.
  • the first inorganic material layer 41 (first layer) is formed in a predetermined region on the substrate S including the region of the device layer 3 so as to cover the device layer 3.
  • the first inorganic material layer 41 covering the device layer 3 is formed on the substrate S so as to have a convex portion as shown in FIG.
  • the first inorganic material layer 41 made of, for example, silicon nitride is formed as a part of the protective layer using a mask having a number of openings corresponding to the region of the first inorganic material layer 41. May be.
  • the first layer forming unit 201 can include a CVD processing apparatus or a sputtering processing apparatus.
  • a stage for placing the substrate S, a mask placed on the substrate S, and the substrate S on the stage are supported.
  • a mask alignment device for aligning the mask with respect to the film, a film forming material supply device, and the like are installed.
  • the substrate S on which the device layer 3 is formed is placed on the stage of the first layer forming unit 201 by a substrate transfer robot or the like placed in the core chamber 200.
  • a mask is arranged at a predetermined position on the substrate S by a mask alignment apparatus or the like so that the device layer 3 is exposed through the opening of the mask.
  • the first inorganic material layer 41 made of silicon nitride or the like is formed so as to cover the device layer 3 by the CVD method.
  • the formation method of the 1st inorganic material layer 41 is not restricted to CVD method, For example, a sputtering method can also be employ
  • the first layer forming unit 201 is configured to have a sputtering apparatus.
  • the substrate S on which the first inorganic material layer 41 having convex portions is formed is unloaded from the first layer forming unit 201 by a substrate transfer robot (not shown), and the resin film forming unit 100 is passed through the core chamber 200. It is carried in.
  • the resin film forming unit 100 includes a step of forming the resin material film 5a on the substrate S on which the first inorganic material layer 41 is formed and a step of forming the resin film 5 by curing the resin material film 5a. Do. In this step, first, a resin material film 5 a made of, for example, an ultraviolet curable acrylic material is formed using the resin film forming unit 100.
  • the substrate S carried into the resin film forming unit 100 is placed on the stage 102. Before the substrate S is carried into the chamber 110, the gas in the chamber 110 is exhausted by the vacuum exhaust device, and the inside of the chamber 110 is maintained in a vacuum state. Further, when the substrate S is carried into the chamber 110, the vacuum state of the chamber 110 is maintained.
  • the chamber 110 is set by the heating device so that at least the temperatures on the inner surfaces of the upper space 107 (US) and the lower space 108 are equal to or higher than the vaporization temperature of the resin material.
  • the substrate S placed on the stage 102 is cooled to a temperature lower than the vaporization temperature of the resin material together with the stage 102 by the substrate cooling device 102a.
  • the resin material supply pipe 112 (first pipe) is heated to a temperature equal to or higher than the vaporization temperature of the resin material by the heater 112d.
  • a mask (not shown) may be arranged at a predetermined position on the substrate S by a mask placing device or the like.
  • the resin material vaporized in the vaporizer 300 is supplied to the chamber 110.
  • the vaporized resin material supplied from the vaporizer 300 is supplied from the upper space 107 into the lower space 108 via the shower plate 105.
  • the vaporized resin material supplied almost evenly over the entire surface of the substrate S by the shower plate 105 is condensed on the substrate surface 2a to form a liquid film 5a, as shown in FIG.
  • the film thickness of the liquid film 5a is increased due to surface tension at corners, recesses, gaps, and the like having an inferior angle on the substrate surface 2a.
  • the liquid film 5a may be formed only in a region such as a portion (near position) near the convex portion 41 by a mask (not shown). Note that it is preferable to control the supply amount of the resin material supplied from the vaporizer 300 in consideration of the droplet formation of the resin material and the film formation rate. Since the resin material formed into droplets on the surface of the substrate S enters a fine gap due to a capillary phenomenon or further aggregates due to the surface tension of the resin material, the liquid film 5a ( Resin material film) can be formed. Thereby, the film thickness of the liquid film 5a is increased at corners, recesses, gaps, and the like having an inferior angle on the substrate surface 2a. In particular, it is possible to fill a minute gap in the boundary portion 2b between the side surface 41s of the first inorganic material layer 41 and the surface 2a of the substrate 2 with the liquid film 5a.
  • a part of the vaporized resin material adheres to the surface such as the inner wall of the chamber 110, but re-vaporizes without condensing on the heated inner wall.
  • the supply of the resin material from the vaporizer 300 is stopped. Subsequently, the surface of the substrate S is irradiated with ultraviolet rays from the UV irradiation device 122 while maintaining the vacuum atmosphere in the chamber 110. The irradiated ultraviolet rays pass through the top plate 120 and the shower plate 105 made of an ultraviolet transmitting material such as quartz and reach the substrate S in the chamber 110.
  • a part of ultraviolet rays irradiated toward the substrate S in the chamber 110 is incident on the surface of the substrate S, and a photopolymerization reaction occurs on the liquid film 5a (resin material film) made of a resin material formed on the surface of the substrate S. Occurs and the liquid film 5a is cured. As shown in FIG. 9, the resin film 5 is formed on the surface of the substrate S. In this embodiment, an acrylic resin thin film is formed. Next, a mask (not shown) is moved from the film forming position on the substrate S to the retracted position by a mask mounting device or the like.
  • the substrate S on which the resin film 5 is formed is unloaded from the resin film forming unit 100 by a substrate transfer robot (not shown), and is loaded into the localization processing unit 202 through the core chamber 200.
  • the localization processing unit 202 has the configuration shown in FIG. 3 as described above.
  • the localization processing unit 202 performs a plasma etching process.
  • the resin film 5 is anisotropically etched by ions in plasma generated from an etching gas such as oxygen.
  • ions are anisotropically drawn toward the substrate S on the electrode.
  • the bias voltage Vpp applied to the electrode, it is determined that the resin film 5 on the substrate S is almost removed by the detected change (detection result) in the bias voltage Vpp, and the etching process is performed.
  • the process ends as the end point of.
  • the forming units 201 and 203 have not only a film forming function but also a localization processing unit. 202 functions can also be provided. In this case, for example, the same processing apparatus can be used as the first layer forming unit 201, the second layer forming unit 203, and the localization processing unit 202.
  • the first resin material 51 remaining on the substrate S by this dry etching process is localized at the boundary 2b between the side surface 41s of the first inorganic material layer 41 and the surface 2a of the substrate 2. (It exists locally). Furthermore, the 1st resin material 51 is unevenly distributed in the part which can smooth the fine unevenness
  • the substrate S formed by localizing the first resin material 51 is unloaded from the localization processing unit 202 by a substrate transfer robot (not shown), and loaded into the second layer forming unit 203 via the core chamber 200.
  • the second inorganic material layer is formed in a predetermined region on the substrate S including the convex portion so as to cover the first inorganic material layer 41 on which the first resin material 51 is formed. 42 (second layer) is formed.
  • the same material as that of the first inorganic material layer 41 is formed using a mask having a number of openings corresponding to the region of the second inorganic material layer 42.
  • the second inorganic material layer 42 (second layer) made of silicon nitride is formed.
  • the device layer 3 (functional layer) is covered with the first inorganic material layer 41 (first layer), the first resin material 51, and the second inorganic material layer 42 (second layer), and the device layer 3 can function as a protective layer for protecting 3.
  • the second layer forming unit 203 can include a CVD processing apparatus or a sputtering processing apparatus.
  • the second layer forming unit 203 can have the same device configuration as the first layer forming unit 201 described above.
  • the same processing apparatus can be used as the first layer forming unit 201 and the second layer forming unit 203, or the second layer forming unit 203 can have the function of the first layer forming unit 201.
  • the second layer forming unit 203 is a plasma CVD processing apparatus, the function of the localization processing unit 202 can be provided. If the first resin material 51 is localized in the second layer forming portion 203, the second inorganic material layer 42 (second layer) can be formed as it is after the localization.
  • the substrate S on which the second inorganic material layer 42 is formed is unloaded from the second layer forming unit 203 by a substrate transfer robot (not shown), and the element structure body via the core chamber 200 and the load lock chamber 210. It is carried out of the manufacturing apparatus 1000.
  • the resin film 5 is formed by the resin film forming unit 100, and then the first resin material 51 localized by the plasma etching process is used by the localization processing unit 202. Form. After that, by forming the second inorganic material layer 42 (second layer), the second inorganic material layer 42 (second layer) is formed at a location requiring barrier properties as a protective layer, such as the boundary portion 2b. Can be reliably formed.
  • the bias voltage Vpp applied from the high frequency power supply 227 to the electrode 226 is measured by the bias voltage sensor 229 serving as a detection device, and unnecessary portions of the resin film 5 on the substrate S are removed by the change in the measured value. to decide.
  • the resin film 5 in the flat portion can be accurately removed by terminating the etching process. For this reason, the time required for the film forming process can be shortened, the film characteristics can be stabilized, and fluctuations in the film characteristics can be prevented.
  • the resin material is unevenly distributed in the boundary portion 2b around the first inorganic material layer 41 (convex portion).
  • the resin material may remain on the surface 2a of the substrate 2 other than the boundary portion 2b, the surface 41a of the first inorganic material layer 41, or the like.
  • the second inorganic material layer 42 (second layer) has a region laminated on the first inorganic material layer 41 via the second resin material 52 as shown in FIG. become.
  • the second resin material 52 is interposed between the first inorganic material layer 41 and the second inorganic material layer 42, and the surface of the first inorganic material layer 41 is independent of the first resin material 51. 41a is unevenly distributed. Even in this case, since the adhesion between the first inorganic material layer 41 and the second inorganic material layer 42 can be maintained, the barrier characteristics of the element structure 10 are not impaired.
  • the side surface of the device layer 3 is covered with the first inorganic material layer 41 (first layer) and the second inorganic material layer 42 (second layer). Therefore, it is possible to prevent moisture and oxygen from entering the device layer 3.
  • the fall of the barrier characteristic accompanying the coverage defect of the 1st inorganic material layer 41 or the 2nd inorganic material layer 42 is carried out. And stable device characteristics can be maintained over a long period of time.
  • the element structure 20 according to the present example further includes a second resin material 52 interposed between the first inorganic material layer 41 and the second inorganic material layer 42 as shown in FIG.
  • the second resin material 52 is unevenly distributed on the surface of the first inorganic material layer 41 independently of the first resin material 51.
  • the surface of the first inorganic material layer 41 is not necessarily flat.
  • particles may be formed before film formation (before transporting the substrate or before entering the film formation apparatus) or during film formation. The case where unevenness
  • the coverage characteristics of the first inorganic material layer 41 with respect to the device layer 3 may be reduced, and desired barrier characteristics may not be obtained.
  • the element structure 20 according to the present example has a structure in which the second resin material 52 is filled in the poorly coated portion of the first inorganic material layer 41 caused by the mixing of the particles P or the like.
  • the second resin material 52 is unevenly distributed at a boundary portion 32b between the surface of the first inorganic material layer 41 and the peripheral surface of the particles P.
  • the coverage of the device layer 3 is enhanced, and the second inorganic material layer 42 can be appropriately formed by the second resin material 52 functioning as a base.
  • the second resin material 52 is formed by the same method as the first resin material 51.
  • the second resin material 52 may be made of the same resin as the first resin material 51. In this case, the first resin material 51 and the second resin material 52 can be simultaneously formed in the same process.
  • the localization processing unit 202 a portion where the resin material is thinly formed such as a flat portion is removed, and the first inorganic material layer 41 is exposed. At this time, the resin material formed around the particle P remains because it is formed thick.
  • the element structure 20 is viewed in the vertical direction from above, since the area of the flat portion is overwhelmingly larger than the area of the resin material formed around the particles, after the thin resin material of the flat portion is removed, The amount etched is greatly reduced and the reaction due to etching is drastically reduced. At this time, the pressure changes and the bias voltage changes. In this example, when the etching of the flat portion is completed, the generation of gas due to the etching decreases, the pressure decreases (the plasma density decreases), and the bias voltage increases.
  • the resin film 5 is not removed at the boundary portion 2b, and the resin film 5 is localized, whereby the first resin material 51 is formed.
  • the second resin material 52 is formed by the resin film 5 being localized without the resin film 5 being removed at the boundary portion 32b.
  • the bias voltage Vpp applied from the high frequency power supply 227 to the electrode 226 is measured by the bias voltage sensor 229 serving as a detection device, It is determined that unnecessary portions of the resin film 5 on S have been removed. By ending the etching process based on the determination result, the resin film 5 can be accurately removed and the first inorganic material layer 41 (first layer) in the flat portion can be reliably exposed. Furthermore, overetching of the resin material 53 to be unevenly distributed can be prevented. Further, according to this example, since the film quality deterioration due to the mixing of the particles P can be compensated for by the second resin material 52, it is possible to improve productivity while ensuring desired barrier characteristics.
  • the element structure 30 includes, for example, a substrate 21 having a device layer 3 (functional layer), a protrusion 40 that covers the side surface 3 s of the device layer 3, a protrusion 40, and It has a first inorganic material layer 41 (first layer) and a second inorganic material layer 42 (second layer) formed on the surface of the substrate 21 so as to cover the device layer 3.
  • the convex portion 40 is formed on the surface 21 a of the substrate 21, and has a concave portion 40 a that accommodates the device layer 3 in the central portion.
  • the bottom surface of the recess 40a is formed at a position higher than the surface 21a of the substrate 21, but it may be formed at the same height as the surface 21a or at a position lower than the surface 21a. May be.
  • the element structure 30 according to the present example further includes a resin material 53 interposed between the first inorganic material layer 41 and the second inorganic material layer 42.
  • the resin material 53 is unevenly distributed on the boundary portion 21 b between the outer side surface of the convex portion 40 and the surface 21 a of the substrate 21, and the boundary portion 22 b between the inner side surface of the convex portion 40 and the device layer 3. Thereby, the coating defect of the 1st inorganic material layer 41 and the 2nd inorganic material layer 42 with respect to the convex part 40 and the surface 3a of the device layer 3 can be suppressed, and the improvement of a barrier characteristic can be aimed at.
  • the resin material 53 can be formed by the same method as the first resin material 51 and the second resin material 52 described above.
  • the portions that cannot be covered by the inorganic material layers 41 and 42 are flattened by the unevenly distributed resin materials 51, 52, and 53.
  • the inorganic material layers 41 and 42 formed on the resin material can be formed more uniformly and with good coverage.
  • the resin materials 51, 52, and 53 have a lower seal against water and the like than the inorganic material layers 41 and 42, but the unevenly distributed resin materials 51, 52, and 53 are covered with the inorganic material layers 41 and 42 and exposed to the outside atmosphere. Therefore, the sealing performance is improved. That is, it is preferable that the resin materials 51, 52, 53 are unevenly distributed so as not to be exposed to the outside atmosphere instead of being in the form of a film.
  • the second inorganic material layer 42 (second layer) covering the first inorganic material layer 41 (first layer) is configured as a single layer, but the second inorganic material layer 42 (second layer) may be formed of a multilayer film.
  • a resin material that is unevenly distributed on the uneven portion of the substrate may be formed by supplying a resin material onto the substrate for each step of forming each layer, thereby further improving the barrier property.
  • the first resin material 51 is localized around the first inorganic material layer 41 serving as a convex portion.
  • the first resin material 51 is unevenly distributed around the device layer 3 by the resin film forming unit 100 and the localization processing unit 202. May be. Thereby, the covering efficiency of the device layer 3 by the first inorganic material layer 41 can be increased.
  • Examples of utilization of the present invention include sealing of organic EL devices and sealing of electronic devices.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Un procédé de fabrication d'une structure d'élément selon la présente invention comprend : une étape de formation de matériau de résine pour former un matériau de résine comprenant un composé organique sur un substrat irrégulier de telle sorte qu'au moins une zone autour d'une partie en saillie est plus épaisse qu'une partie plate ; et une étape de gravure de matériau de résine pour retirer le matériau de résine au niveau de la partie plate tout en laissant une partie du matériau de résine située autour de la partie en saillie. Lors de l'étape de gravure de matériau de résine, un changement d'une condition spécifique parmi des conditions pour réaliser un processus de gravure sur le matériau de résine est détecté, et le résultat de détection détecté est utilisé comme point final du processus de gravure.
PCT/JP2018/005953 2017-02-21 2018-02-20 Procédé de fabrication d'une structure d'élément Ceased WO2018155425A1 (fr)

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KR1020197009521A KR102186663B1 (ko) 2017-02-21 2018-02-20 소자 구조체의 제조 방법
JP2019501332A JP6799134B2 (ja) 2017-02-21 2018-02-20 素子構造体の製造方法
CN201880003963.3A CN109892012B (zh) 2017-02-21 2018-02-20 元件结构体的制造方法

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108286A (en) * 1977-03-03 1978-09-20 Nichiden Varian Kk Etching control device
JPS5619624A (en) * 1979-07-27 1981-02-24 Hitachi Ltd Detection of etching end point in plasma processor
JPH07201832A (ja) * 1993-12-28 1995-08-04 Toshiba Corp 半導体製造装置
JPH11286792A (ja) * 1998-03-31 1999-10-19 Jeol Ltd 高周波プラズマ装置
JP2000357679A (ja) * 1999-06-14 2000-12-26 Yamaha Corp エッチング終点検出方法
JP2012064387A (ja) * 2010-09-15 2012-03-29 Toshiba Corp 有機エレクトロルミネッセンス表示装置およびその製造方法
JP2014154450A (ja) * 2013-02-12 2014-08-25 Japan Display Inc 有機半導体素子および有機半導体素子の製造方法
WO2014196137A1 (fr) * 2013-06-07 2014-12-11 株式会社アルバック Structure d'élément et procédé de production

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4917833B2 (ja) * 2005-06-29 2012-04-18 エルジー ディスプレイ カンパニー リミテッド 有機ｅｌディスプレイ及びその製造方法
JP2013073880A (ja) 2011-09-29 2013-04-22 Ulvac Japan Ltd 発光素子の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108286A (en) * 1977-03-03 1978-09-20 Nichiden Varian Kk Etching control device
JPS5619624A (en) * 1979-07-27 1981-02-24 Hitachi Ltd Detection of etching end point in plasma processor
JPH07201832A (ja) * 1993-12-28 1995-08-04 Toshiba Corp 半導体製造装置
JPH11286792A (ja) * 1998-03-31 1999-10-19 Jeol Ltd 高周波プラズマ装置
JP2000357679A (ja) * 1999-06-14 2000-12-26 Yamaha Corp エッチング終点検出方法
JP2012064387A (ja) * 2010-09-15 2012-03-29 Toshiba Corp 有機エレクトロルミネッセンス表示装置およびその製造方法
JP2014154450A (ja) * 2013-02-12 2014-08-25 Japan Display Inc 有機半導体素子および有機半導体素子の製造方法
WO2014196137A1 (fr) * 2013-06-07 2014-12-11 株式会社アルバック Structure d'élément et procédé de production

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KR102186663B1 (ko) 2020-12-04
CN109892012A (zh) 2019-06-14
JPWO2018155425A1 (ja) 2019-07-04
JP6799134B2 (ja) 2020-12-09
TW201842693A (zh) 2018-12-01
CN109892012B (zh) 2021-06-29
KR20190044112A (ko) 2019-04-29
TWI690106B (zh) 2020-04-01

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