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WO2018163399A1 - Dispositif de traitement de substrat, procédé de fabrication de dispositif à semi-conducteurs, et programme - Google Patents

Dispositif de traitement de substrat, procédé de fabrication de dispositif à semi-conducteurs, et programme Download PDF

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Publication number
WO2018163399A1
WO2018163399A1 PCT/JP2017/009675 JP2017009675W WO2018163399A1 WO 2018163399 A1 WO2018163399 A1 WO 2018163399A1 JP 2017009675 W JP2017009675 W JP 2017009675W WO 2018163399 A1 WO2018163399 A1 WO 2018163399A1
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WO
WIPO (PCT)
Prior art keywords
gas
substrate
rotation
wafer
processing chamber
Prior art date
Application number
PCT/JP2017/009675
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English (en)
Japanese (ja)
Inventor
林　昭成
加我　友紀直
卓朗 牛田
Original Assignee
株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ filed Critical 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ
Priority to PCT/JP2017/009675 priority Critical patent/WO2018163399A1/fr
Priority to JP2019504263A priority patent/JPWO2018163399A1/ja
Priority to TW107102304A priority patent/TWI683347B/zh
Publication of WO2018163399A1 publication Critical patent/WO2018163399A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Definitions

  • the present invention relates to a substrate processing apparatus, a semiconductor device manufacturing method, and a program.
  • JP 2010-123752 A International Publication No. 2005/088692
  • An object of the present invention is to provide a technique capable of improving the in-plane uniformity of the film thickness of a formed film.
  • a processing chamber for processing the substrate A substrate holder for holding the substrate in the processing chamber; A rotation mechanism for rotating the substrate holder; A controller that controls the rotation mechanism to control the rotation speed of the substrate holder,
  • a technique is provided in which the control unit is configured to control the rotation mechanism such that the rotation speed of the substrate holder changes within one rotation without changing a preset time per rotation.
  • FIG. 2 is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus suitably used in an embodiment of the present invention, and is a diagram showing a processing furnace part in a cross-sectional view taken along line AA of FIG.
  • the controller of the substrate processing apparatus used suitably by embodiment of this invention, and is a figure which shows the control system of a controller with a block diagram. It is a figure which shows the flow of the substrate processing process in this invention.
  • (A) is a figure which shows film thickness distribution when it forms into a film at the rotational speed of the to-be-processed substrate
  • (B) is a figure of the to-be-processed substrate based on the film-forming tendency of (A). It is a figure which shows film thickness distribution when forming into a film so that a rotational speed may change within 1 rotation. It is a figure which shows the other Example which was made to change the rotational speed of a to-be-processed substrate within 1 rotation. It is a figure which shows the other Example which was made to change the rotational speed of a to-be-processed substrate.
  • FIGS. 1 to 5 An embodiment of the present invention will be described with reference to FIGS. 1 to 5.
  • the processing furnace 202 includes a heater 207 as a heating device (heating mechanism).
  • the heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate.
  • the heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) gas with heat.
  • a reaction tube 203 is disposed inside the heater 207 concentrically with the heater 207.
  • the reaction tube 203 is made of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC), and has a cylindrical shape with the upper end closed and the lower end opened.
  • a manifold (inlet flange) 209 is disposed below the reaction tube 203 concentrically with the reaction tube 203.
  • the manifold 209 is made of a metal such as stainless steel (SUS), for example, and is formed in a cylindrical shape with an upper end and a lower end opened. The upper end portion of the manifold 209 is engaged with the lower end portion of the reaction tube 203 and is configured to support the reaction tube 203.
  • An O-ring 220a as a seal member is provided between the manifold 209 and the reaction tube 203.
  • the reaction tube 203 As the manifold 209 is supported by the heater base, the reaction tube 203 is installed vertically.
  • a processing vessel (reaction vessel) is mainly constituted by the reaction tube 203 and the manifold 209.
  • a processing chamber 201 is formed in the cylindrical hollow portion of the processing container. The processing chamber 201 is configured to accommodate a plurality of wafers 200 as substrates. Note that the processing container is not limited to the above configuration, and only the reaction tube 203 may be referred to as a processing container.
  • nozzles 249a and 249b are provided so as to penetrate the side wall of the manifold 209.
  • Gas supply pipes 232a and 232b are connected to the nozzles 249a and 249b, respectively.
  • the reaction tube 203 is provided with the two nozzles 249a and 249b and the two gas supply tubes 232a and 232b, and can supply a plurality of types of gases into the processing chamber 201. It has become.
  • the nozzles 249a and 249b may be provided so as to penetrate the side wall of the reaction tube 203.
  • the gas supply pipes 232a and 232b are provided with mass flow controllers (MFC) 241a and 241b as flow rate controllers (flow rate control units) and valves 243a and 243b as opening / closing valves, respectively, in order from the upstream side.
  • MFC mass flow controllers
  • Gas supply pipes 232c and 232d for supplying an inert gas are connected to the gas supply pipes 232a and 232b on the downstream side of the valves 243a and 243b, respectively.
  • the gas supply pipes 232c and 232d are provided with MFCs 241c and 241d and valves 243c and 243d, respectively, in order from the upstream side.
  • the nozzle 249 a is placed in an annular space in plan view between the inner wall of the reaction tube 203 and the wafer 200, along the upper direction from the lower portion of the inner wall of the reaction tube 203. It is provided to rise upward. That is, the nozzle 249a is provided on the side of the wafer arrangement area where the wafers 200 are arranged, in an area that horizontally surrounds the wafer arrangement area, along the wafer arrangement area. In other words, the nozzle 249 a is provided perpendicular to the surface (flat surface) of the wafer 200 on the side of the end (peripheral edge, edge) of each wafer 200 carried into the processing chamber 201.
  • a gas supply hole 250a for supplying gas is provided on the side surface of the nozzle 249a.
  • the gas supply hole 250 a is opened so as to face the center of the reaction tube 203, and gas can be supplied toward the wafer 200.
  • a plurality of gas supply holes 250 a are provided from the lower part to the upper part of the reaction tube 203.
  • the nozzle 249b is provided in a buffer chamber 237 that is a gas dispersion space.
  • the buffer chamber 237 is formed in an annular space in a plan view between the inner wall of the reaction tube 203 and the wafer 200, and in a portion extending from the lower portion to the upper portion of the inner wall of the reaction tube 203. Are provided along the loading direction. That is, the buffer chamber 237 is formed by the buffer structure (buffer unit) 300 along the wafer arrangement region in a region that horizontally surrounds the wafer arrangement region on the side of the wafer arrangement region.
  • the buffer structure 300 is made of an insulating material such as quartz, and a gas supply hole 250c for supplying gas or active species to be described later is provided on a wall surface formed in an arc shape of the buffer structure 300.
  • the gas supply hole 250 c is opened so as to face the center of the reaction tube 203, and gas can be supplied toward the wafer 200.
  • a plurality of gas supply holes 250 c are provided from the lower part to the upper part of the reaction tube 203.
  • the nozzle 249b rises upward from the lower end of the inner wall of the reaction tube 203 toward the upper side in the stacking direction of the wafer 200 at the end opposite to the end where the gas supply hole 250c of the buffer chamber 237 is provided. Is provided. That is, the nozzle 249b is provided inside the buffer structure 300, on the side of the wafer arrangement area where the wafers 200 are arranged, and in the area that horizontally surrounds the wafer arrangement area, along the wafer arrangement area. . That is, the nozzle 249 b is provided on the side of the end of the wafer 200 carried into the processing chamber 201 and perpendicular to the surface of the wafer 200.
  • a gas supply hole 250b for supplying gas is provided on the side surface of the nozzle 249b. The gas supply hole 250 b is opened to face the center of the buffer chamber 237. Similar to the gas supply hole 250c, a plurality of gas supply holes 250b are provided from the lower part to the upper part of the reaction tube 203.
  • a silane source gas containing silicon (Si) as a predetermined element is supplied into the processing chamber 201 through the MFC 241a, the valve 243a, and the nozzle 249a as a raw material containing the predetermined element.
  • the silane source gas for example, a source gas containing Si and a halogen element, that is, a halosilane source gas can be used.
  • the halosilane raw material is a silane raw material having a halogen group.
  • a source gas containing Si and Cl that is, a chlorosilane source gas can be used.
  • a chlorosilane source gas for example, dichlorosilane (SiH 2 Cl 2 , abbreviation: DCS) gas can be used.
  • a nitrogen (N) -containing gas nitriding agent, nitriding gas
  • a reactant reactant having a chemical structure different from that of the raw material
  • a nitrogen (N) -containing gas nitriding agent, nitriding gas
  • reactant reactant having a chemical structure different from that of the raw material
  • a nitrogen (N) -containing gas nitriding agent, nitriding gas
  • reactant having a chemical structure different from that of the raw material
  • reactant having a chemical structure different from that of the raw material
  • the nitriding agent for example, ammonia (NH 3 ) gas can be used.
  • NH 3 gas is used as the nitriding agent, for example, this gas is plasma-excited using a plasma source to be described later and supplied as a plasma excitation gas.
  • nitrogen (N 2 ) gas as an inert gas passes through the MFC 241c and 241d, valves 243c and 243d, gas supply pipes 232a and 232b, and nozzles 249a and 249b, respectively. Supplied into 201.
  • the gas supply pipe 232a, the MFC 241a, and the valve 243a constitute a raw material supply system as a first gas supply system.
  • a reactant supply system (reactant supply system) as a second gas supply system is mainly configured by the gas supply pipe 232b, the MFC 241b, and the valve 243b.
  • An inert gas supply system is mainly configured by the gas supply pipes 232c and 232d, the MFCs 241c and 241d, and the valves 243c and 243d.
  • the raw material supply system, the reactant supply system, and the inert gas supply system are also simply referred to as a gas supply system (gas supply unit).
  • the nozzle 249a may be included in the raw material supply system
  • the nozzle 249b may be included in the reactant supply system
  • the nozzles 249a and 249b may be included in the inert gas supply system.
  • two rod-shaped electrodes 269 and 270 made of a conductor and having an elongated structure are arranged along the arrangement direction of the wafer 200 from the lower part to the upper part of the reaction tube 203. It is installed. Each of the rod-shaped electrodes 269 and 270 is provided in parallel with the nozzle 249b. Each of the rod-shaped electrodes 269 and 270 is protected by being covered with an electrode protection tube 275 from the upper part to the lower part.
  • One of the rod-shaped electrodes 269 and 270 is connected to the high-frequency power source 273 via the matching unit 272, and the other is grounded to the ground that is the reference potential.
  • Plasma is generated in the plasma generation region 224 between the rod-shaped electrodes 269 and 270 by applying high-frequency (RF) power between the rod-shaped electrodes 269 and 270 from the high-frequency power source 273.
  • the rod-shaped electrodes 269 and 270 and the electrode protection tube 275 mainly constitute a plasma source as a plasma generator (plasma generator).
  • the matching device 272 and the high-frequency power source 273 may be included in the plasma source.
  • the plasma source functions as a plasma excitation unit (activation mechanism) that excites (or activates) a gas into a plasma state, that is, a plasma state.
  • the electrode protection tube 275 has a structure in which each of the rod-shaped electrodes 269 and 270 can be inserted into the buffer chamber 237 while being isolated from the atmosphere in the buffer chamber 237. Or it is filled with an inert gas such as N 2 gas into the electrode protection tube 275, by the interior of the electrode protection tube 275 is purged with an inert gas such as N 2 gas using an inert gas purge mechanism, The oxygen (O 2 ) concentration inside the electrode protection tube 275 can be reduced, and oxidation of the rod-shaped electrodes 269 and 270 can be prevented.
  • an inert gas such as N 2 gas
  • the reaction tube 203 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201.
  • the exhaust pipe 231 is connected via a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure adjustment unit).
  • a vacuum pump 246 as a vacuum exhaust device is connected.
  • the APC valve 244 can perform vacuum evacuation and vacuum evacuation stop in the processing chamber 201 by opening and closing the valve with the vacuum pump 246 activated, and further, with the vacuum pump 246 activated,
  • the pressure in the processing chamber 201 can be adjusted by adjusting the valve opening based on the pressure information detected by the pressure sensor 245.
  • An exhaust system is mainly configured by the exhaust pipe 231, the APC valve 244, and the pressure sensor 245.
  • the vacuum pump 246 may be included in the exhaust system.
  • the exhaust pipe 231 is not limited to being provided in the reaction pipe 203, and may be provided in the manifold 209 similarly to the nozzles 249a and 249b.
  • a seal cap 219 is provided as a furnace opening lid capable of airtightly closing the lower end opening of the manifold 209.
  • the seal cap 219 is made of a metal such as SUS and is formed in a disk shape.
  • an O-ring 220b is provided as a seal member that comes into contact with the lower end of the manifold 209.
  • a rotation mechanism 267 for rotating a boat 217 described later is installed on the opposite side of the seal cap 219 from the processing chamber 201.
  • a rotation shaft 255 of the rotation mechanism 267 passes through the seal cap 219 and is connected to the boat 217.
  • the rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217.
  • the seal cap 219 is configured to be lifted and lowered in the vertical direction by a boat elevator 115 as a lifting mechanism vertically installed outside the reaction tube 203.
  • the boat elevator 115 is configured so that the boat 217 can be carried in and out of the processing chamber 201 by moving the seal cap 219 up and down.
  • the boat elevator 115 is configured as a transfer device (transfer mechanism) that transfers the boat 217, that is, the wafers 200 into and out of the processing chamber 201.
  • a shutter 219s is provided below the manifold 209 as a furnace port lid that can airtightly close the lower end opening of the manifold 209 while the seal cap 219 is lowered by the boat elevator 115.
  • the shutter 219s is made of a metal such as SUS, and is formed in a disk shape. On the upper surface of the shutter 219s, an O-ring 220c as a seal member that comes into contact with the lower end of the manifold 209 is provided.
  • the opening / closing operation (elevating operation, rotating operation, etc.) of the shutter 219s is controlled by the shutter opening / closing mechanism 115s.
  • a boat 217 as a substrate support is installed between a pair of upper and lower end plates (an upper end plate is also called a ceiling plate and a lower end plate is also called a bottom plate) and both end plates.
  • a plurality of (three in the present embodiment) holding columns (boat columns) 217a to 217c (not shown in FIG. 1) arranged vertically are provided.
  • the holding columns 217 a to 217 c are all formed in the same shape, and the holding column 217 a and the holding column 217 b, and the holding column 217 a and the holding column 217 c are 90 along the circumferential direction of the wafer 200.
  • the holding pillars 217 b and the holding pillars 217 c are arranged at intervals of 180 degrees along the circumferential direction of the wafer 200. That is, the interval between the holding column 217a and the holding column 217b and the interval between the holding column 217a and the holding column 217c are arranged to be narrower than the interval between the holding column 217b and the holding column 217c.
  • Each holding column 217a to 217c has a plurality of holding grooves 217d (not shown in FIG. 1) arranged at equal intervals in the longitudinal direction, and holds the wafer 200 horizontally in the same plane by facing each other at the same height. It is formed to be able to.
  • the peripheral portion of the wafer 200 is inserted between the holding grooves 217d of the holding columns 217a to 217c, so that one or a plurality of, for example, 25 to 200 wafers 200 can be placed in a horizontal posture and Are aligned in the vertical direction with their centers aligned, and are supported in multiple stages. That is, they are arranged so as to be arranged at a predetermined interval.
  • the boat 217 is made of a heat-resistant material such as quartz or SiC. Under the boat 217, heat insulating plates 218 made of a heat-resistant material such as quartz or SiC are supported in multiple stages.
  • a temperature sensor 263 as a temperature detector is installed inside the reaction tube 203.
  • the temperature in the processing chamber 201 becomes a desired temperature distribution.
  • the temperature sensor 263 is provided along the inner wall of the reaction tube 203 similarly to the nozzles 249a and 249b.
  • the controller 121 which is a control unit (control device), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d.
  • the RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via the internal bus 121e.
  • an input / output device 122 configured as a touch panel or the like is connected to the controller 121.
  • the storage device 121c includes, for example, a flash memory, an HDD (Hard Disk Drive), and the like.
  • a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedure and conditions of the substrate processing described later, and the like are stored in a readable manner.
  • the process recipe is a combination of the controller 121 that allows the controller 121 to execute each procedure in the substrate processing described later and obtain a predetermined result, and functions as a program.
  • process recipes, control programs, and the like are collectively referred to simply as programs.
  • the process recipe is also simply called a recipe.
  • program When the term “program” is used in this specification, it may include only a recipe, only a control program, or both.
  • the RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily stored.
  • the I / O port 121d includes the above-described MFCs 241a to 241d, valves 243a to 243d, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 263, matching unit 272, high frequency power supply 273, rotation mechanism 267, boat It is connected to an elevator 115, a shutter opening / closing mechanism 115s, and the like.
  • the CPU 121a is configured to read out and execute a control program from the storage device 121c and to read a recipe from the storage device 121c in response to an operation command input from the input / output device 122 or the like.
  • the CPU 121a is based on the control of the rotating mechanism 267, the flow adjustment operation of various gases by the MFCs 241a to 241d, the opening and closing operation of the valves 243a to 243d, the opening and closing operation of the APC valve 244 and the pressure sensor 245 so as to follow the contents of the read recipe.
  • the controller 121 installs the above-described program stored in an external storage device (for example, a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory) 123 in a computer.
  • an external storage device for example, a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory
  • the storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
  • recording medium When the term “recording medium” is used in this specification, it may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both of them.
  • the program may be provided to the computer using a communication means such as the Internet or a dedicated line without using the external storage device 123.
  • the step of supplying the DCS gas as the source gas and the step of supplying the plasma-excited NH 3 gas as the reaction gas are performed non-simultaneously, that is, without being synchronized, a predetermined number of times (one or more times).
  • a silicon nitride film SiN film
  • a predetermined film may be formed on the wafer 200 in advance.
  • a predetermined pattern may be formed in advance on the wafer 200 or a predetermined film.
  • wafer When the term “wafer” is used in this specification, it may mean the wafer itself or a laminate of the wafer and a predetermined layer or film formed on the surface thereof.
  • wafer surface When the term “wafer surface” is used in this specification, it may mean the surface of the wafer itself, or may mean the surface of a predetermined layer or the like formed on the wafer.
  • the phrase “form a predetermined layer on the wafer” means that the predetermined layer is directly formed on the surface of the wafer itself, a layer formed on the wafer, etc. It may mean that a predetermined layer is formed on the substrate.
  • substrate is also synonymous with the term “wafer”.
  • Transportation step: S1 When a plurality of wafers 200 are loaded into the boat 217 (wafer charge), the shutter 219s is moved by the shutter opening / closing mechanism 115s, and the lower end opening of the manifold 209 is opened (shutter open). Thereafter, as shown in FIG. 1, the boat 217 that supports the plurality of wafers 200 is lifted by the boat elevator 115 and loaded into the processing chamber 201 (boat loading). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b.
  • the inside of the processing chamber 201 that is, the space where the wafer 200 exists is evacuated (reduced pressure) by the vacuum pump 246 so that a desired pressure (degree of vacuum) is obtained.
  • the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on the measured pressure information.
  • the wafer 200 in the processing chamber 201 is heated by the heater 207 so as to reach a desired temperature.
  • the power supply to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution.
  • rotation of the boat 217 and the wafers 200 by the rotation mechanism 267 is started.
  • the exhaust in the processing chamber 201 and the heating and rotation of the wafer 200 are all continuously performed at least until the processing on the wafer 200 is completed.
  • step S ⁇ b> 3 DCS gas as a source gas is supplied to the wafer 200 in the processing chamber 201.
  • the valve 243a is opened and DCS gas is caused to flow into the gas supply pipe 232a.
  • the flow rate of the DCS gas is adjusted by the MFC 241a, supplied to the processing chamber 201 from the gas supply hole 250a through the nozzle 249a, and exhausted from the exhaust pipe 231.
  • the valve 243c may be opened at the same time, and N 2 gas may flow into the gas supply pipe 232c.
  • the flow rate of the N 2 gas supplied at this time is adjusted by the MFC 241c, supplied into the processing chamber 201 together with the DCS gas, and exhausted from the exhaust pipe 231.
  • the valve 243d may be opened and N 2 gas may flow into the gas supply pipe 232d.
  • the N 2 gas supplied from the nozzle 249 b is supplied into the processing chamber 201 through the gas supply pipe 232 b and the nozzle 249 b and exhausted from the exhaust pipe 231.
  • the supply flow rate of DCS gas controlled by the MFC 241a is, for example, a flow rate in the range of 1 sccm to 5000 sccm, preferably 10 sccm to 2000 sccm.
  • the supply flow rate of the N 2 gas controlled by the MFCs 241c and 241d is set to a flow rate in the range of, for example, 100 sccm or more and 10,000 sccm or less.
  • the pressure in the processing chamber 201 is, for example, 1 Pa or more and 2666 Pa or less, preferably 67 Pa or more and 1333 Pa.
  • the supply time of the DCS gas is, for example, 1 second or more and 100 seconds or less, preferably 1 second or more and 50 seconds or less.
  • the temperature of the heater 207 is set to such a temperature that the temperature of the wafer 200 is in the range of 300 ° C. or more and 600 ° C. or less.
  • a Si-containing layer containing Cl is formed on the wafer 200 (surface underlayer film).
  • the Si-containing layer containing Cl may be a Si layer, a DCS adsorption layer, or both of them.
  • the Si-containing layer containing Cl is also simply referred to as a Si-containing layer.
  • the Si layer is a generic name including a continuous layer composed of Si, a discontinuous layer, and a Si thin film formed by overlapping these layers.
  • Si constituting the Si layer includes those in which the bond with Cl is not completely broken and the bonds with H are not completely broken.
  • the adsorption layer of DCS includes a discontinuous adsorption layer in addition to a continuous adsorption layer composed of DCS molecules.
  • DCS molecules constituting the adsorption layer of DCS are those in which the bond between Si and Cl is partially broken, the bond in which Si and H are partially broken, and the bond in which Cl and H are partially broken Etc. are also included. That is, the DCS adsorption layer may be a DCS physical adsorption layer, a DCS chemical adsorption layer, or both of them.
  • the valve 243a is closed and the supply of DCS gas into the processing chamber 201 is stopped.
  • the APC valve 244 is kept open, and the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and DCS gas and reaction by-product remaining in the processing chamber 201 and contributing to the formation of the Si-containing layer. Products and the like are excluded from the processing chamber 201 (S4).
  • the supply of N 2 gas into the processing chamber 201 is maintained while the valves 243c and 243d remain open. N 2 gas acts as a purge gas. Note that step S4 may be omitted.
  • inorganic halosilane source gases such as monochlorosilane gas, trichlorosilane gas, tetrachlorosilane gas, hexachlorodisilane gas, and octachlorotrisilane gas can be suitably used as the source gas.
  • the raw material gases include tetrakisdimethylaminosilane gas, trisdimethylaminosilane gas, bisdimethylaminosilane gas, bistally butylaminosilane, bisdiethylaminosilane gas, dimethylaminosilane gas, diethylaminosilane gas, dipropylaminosilane gas, diisopropylaminosilane gas, butylaminosilane.
  • Various aminosilane source gases such as gas and hexamethyldisilazane gas, and halogen-free inorganic silane source gases such as monosilane gas, disilane gas, and trisilane gas can be suitably used.
  • a rare gas such as Ar gas, He gas, Ne gas, or Xe gas can be used in addition to N 2 gas.
  • the opening / closing control of the valves 243b to 243d is performed in the same procedure as the opening / closing control of the valves 243a, 243c, 243d in step S3.
  • the flow rate of the NH 3 gas is adjusted by the MFC 241b and is supplied into the buffer chamber 237 through the nozzle 249b. At this time, high frequency power is supplied between the rod-shaped electrodes 269 and 270.
  • the NH 3 gas supplied into the buffer chamber 237 is excited into a plasma state, supplied as active species (NH 3 * ) into the processing chamber 201, and exhausted from the exhaust pipe 231.
  • the NH 3 gas excited to a plasma state is also referred to as nitrogen plasma.
  • the NH 3 gas supply flow rate controlled by the MFC 241b is, for example, a flow rate in the range of 100 sccm to 10,000 sccm.
  • the high frequency power applied to the rod-shaped electrodes 269 and 270 is, for example, power within a range of 50 W or more and 1000 W or less.
  • the pressure in the processing chamber 201 is, for example, a pressure in the range of 1 Pa or more and 100 Pa or less. By using plasma, the NH 3 gas can be activated even when the pressure in the processing chamber 201 is set to such a relatively low pressure zone.
  • the time for supplying active species obtained by plasma excitation of NH 3 gas to the wafer 200 is, for example, 1 second or more, 120 seconds or less, preferably 1 second or more, The time is within a range of 60 seconds or less.
  • Other processing conditions are the same as those in S3 described above.
  • the Si-containing layer formed on the wafer 200 is plasma-nitrided.
  • the Si—Cl bond and Si—H bond of the Si-containing layer are cut by the energy of the plasma-excited NH 3 gas. Cl and H from which the bond with Si is cut off will be released from the Si-containing layer.
  • Si in the Si-containing layer that has dangling bonds due to desorption of Cl, H, etc., bonds with N contained in the NH 3 gas, and Si—N bonds are formed. Will be formed.
  • the Si-containing layer is changed (modified) into a layer containing Si and N, that is, a silicon nitride layer (SiN layer).
  • step S6 After changing the Si-containing layer to the SiN layer, the valve 243b is closed and the supply of NH 3 gas is stopped. Further, the supply of high-frequency power between the rod-shaped electrodes 269 and 270 is stopped. Then, NH 3 gas and reaction byproducts remaining in the processing chamber 201 are removed from the processing chamber 201 by the same processing procedure and processing conditions as in step S4 (S6). Note that step S6 may be omitted.
  • nitriding agent that is, N-containing gas for plasma excitation
  • hydrogen nitride-based gas such as diazene (N 2 H 2 ) gas, hydrazine (N 2 H 4 ) gas, N 3 H 8 gas, etc.
  • a gas containing these compounds, nitrogen (N 2 ) gas, or the like can be used.
  • inert gas for example, various rare gases exemplified in step S4 can be used in addition to the N 2 gas.
  • Predetermined number of times S7
  • the above-described steps S3, S4, S5, and S6 are performed non-simultaneously in this order, that is, without being synchronized, as one cycle, and this cycle is performed a predetermined number of times (n times), that is, once or more (S7).
  • n times a predetermined number of times
  • a SiN film having a predetermined composition and a predetermined film thickness can be formed on the wafer 200.
  • the above cycle is preferably repeated a plurality of times. That is, the thickness of the SiN layer formed per cycle is made smaller than the desired film thickness, and the above-described process is performed until the SiN film formed by stacking the SiN layers has the desired film thickness.
  • the cycle is preferably repeated multiple times.
  • Unloading step: S9 Thereafter, the seal cap 219 is lowered by the boat elevator 115 to open the lower end of the manifold 209, and the processed wafer 200 is supported by the boat 217 from the lower end of the manifold 209 to the outside of the reaction tube 203. Unloading (boat unloading) is performed (S9). After the boat unloading, the shutter 219s is moved, and the lower end opening of the manifold 209 is sealed by the shutter 219s via the O-ring 220c (shutter close). The processed wafer 200 is unloaded from the reaction tube 203 and then taken out from the boat 217 (wafer discharge). Note that an empty boat 217 may be carried into the processing chamber 201 after the wafer discharge.
  • the boat 217 is rotated at a predetermined rotation speed by the rotation mechanism 267 during the supply of the processing gas in order to improve the uniformity of the film thickness distribution within the wafer surface. That is, by rotating the wafer 200, the gas ejected from the gas supply holes 250c formed in the wall surface of the buffer structure 300 or the gas supply holes 250a formed in the nozzle 249a is evenly applied to the wafer 200 in the circumferential direction. Since they are in contact with each other, the in-plane film thickness distribution uniformity (in-plane film thickness uniformity) can be improved.
  • FIG. 5 shows an example of a film thickness distribution when the rotational speed is controlled to be constant as an example for comparison with examples described later.
  • the film thickness on the left side is thicker, and the distribution is thinner from the right to the lower right.
  • the uniformity of the film thickness distribution within the wafer surface is deteriorated. Therefore, in the substrate processing step in this embodiment, as shown in Examples 1 to 3 below, control is performed so as to change the rotation speed of the boat 217.
  • the timing for switching the rotation speed is when the boundary of the region described in detail below is located in front of the gas supply hole of the gas supply unit.
  • the film distribution distribution tendency of the thin film formed on the wafer calculated from parameters such as the type of gas used, the gas flow rate, and the processing temperature is stored in the storage device 121c or the external storage device 123 in advance. Then, based on the recorded information, the in-plane uniformity of the wafer is improved by changing the rotational speed between the thin film forming region and the thin film forming region.
  • FIG. 6A and FIG. 6B show an example in which the speed at which the boat 217 is rotated in the case of using the process having the wafer deposition tendency shown in FIG. 5 is changed within one rotation. It explains using.
  • the boat notch position is set as a reference (0 degree) that is the starting point of the rotation, and the boat is formed based on the wafer deposition tendency when the rotation speed is constant as shown in FIGS. 5 and 6A.
  • An angular position (rotational angle) for changing the rotational speed of 217 and a rotational speed at the angular position are set. Specifically, for example, the time per rotation of the boat 217 is set to 43 seconds in advance.
  • the rotation speed r1 of 0 ° to 160 ° (region A), which is the region where the film thickness on the left side tends to increase, is 1.9 rpm, and the film thickness is from the left side.
  • Rotation speed r2 of 160 to 260 degrees (area B), which is a thin area on the upper right side, is 1.4 rpm, and rotation is 260 degrees to 360 degrees (area C), which is an area where the film thickness is likely to be thin on the lower right side.
  • the speed r3 is set to 1.0 rpm.
  • the gas supply holes 250a and 250c during the gas supply pass through the region where the film thickness tends to be thick based on the film formation tendency of the wafer when the rotation speed is constant.
  • the rotational speed of the boat 217 is increased.
  • the amount of gas supplied to the surface of the wafer 200 per unit rotational movement distance indicating the distance moved in the rotational direction per unit time (the amount of gas reaching the surface of the wafer 200 or the gas irradiation time) is reduced.
  • the rotation speed of the boat 217 is decreased. This increases the gas supply amount per unit rotational movement distance.
  • the gas contact time (gas supply time) to a predetermined region where the film thickness tends to increase on the surface of the wafer 200 is shortened, and the predetermined region where the film thickness tends to decrease. It becomes possible to lengthen the gas contact time to, and to reduce (or increase) the amount (exposure amount) of gas contact in the region. Therefore, as shown in FIG. 6B, the in-plane film thickness uniformity of the film formed on the wafer can be improved.
  • the rotation speed in each region is preferably set as follows, for example. That is, the storage device 121c or the external storage device 123 has a speed range that is greater than 1 time and less than or equal to 10 times as high speed as a reference rotation speed, and a speed range that is 0.1 times or more and less than 1 time as low speed. It is preferable that the rotation speed is controlled appropriately. If the rotational speed in the high speed region is controlled to be larger than 10 times the reference rotational speed, the centrifugal force applied to the wafer 200 becomes too large and the wafer 200 placed on the boat 217 is placed.
  • the self-decomposition rate changes while the supplied processing gas flows on the wafer, that is, the amount of self-decomposition is small immediately after the supply in the processing chamber, and the amount is self-decomposed on the downstream side of the wafer 200.
  • the gas is supplied in an environment where the amount of gas increases (gas species, film forming temperature)
  • the gas supply hole during gas supply passes through the 180 ° opposite side of the region where the film thickness tends to be thin. Is set so as to slow down the rotation speed of the wafer 200, so that the amount of gas supplied to the surface of the wafer 200 is increased in a state where the region where the film thickness of the surface of the wafer 200 tends to be thin is positioned downstream of the gas flow.
  • the controller 121 controls the boat 217 to continuously perform the rotation without stopping the rotation of the boat 217 when changing the rotation speed of the boat 217.
  • the controller 121 controls the boat 217 to continuously perform the rotation without stopping the rotation of the boat 217 when changing the rotation speed of the boat 217.
  • the reference position that is the starting point of the rotation of the boat 217 that is, the position that becomes the outer edge of the wafer 200 facing the center holding column 217a across the center of the wafer 200 at the rotation angle of 0 degree.
  • the present invention is not limited to this, and the position of the holding pillars 217b and 217c that is the outer edge of the wafer 200 facing the center of the wafer 200 may be determined as the reference position, or at least one of the holding pillars 217a to 217c.
  • One wafer 200 holding position may be set as the reference position.
  • the reference position may be determined by regarding the rotation shaft 255 of the rotation mechanism 267 as the center instead of the center of the wafer 200.
  • the reference position that is the starting point of the rotation is not limited to being determined with respect to the positions of the holding columns 217a to 217c, and the region where the rotation speed is changed is preceded by the tendency of the film thickness distribution stored in advance. It is possible to determine and set an arbitrary boundary in the region as a reference position for rotation.
  • the controller 121 controls the rotation mechanism 267 using the above-described rotation speed and angular position as parameters, and the rotation speed of the boat 217 in a preset time per rotation. Can be adjusted within one rotation, the film thickness distribution in the circumferential direction can be adjusted, and as shown in FIG. 6 (B), the distribution becomes concentric and the uniformity is improved. The throughput can be improved with a constant value.
  • the time for supplying the DCS gas to the wafer 200 in step S3 is 5 seconds
  • the time for supplying the purge gas to the wafer 200 in step S4 is 10 seconds
  • the time for supplying the NH 3 gas to the wafer 200 in step S5 is 20 seconds.
  • the time for supplying the purge gas to the wafer 200 in step S6 is 10 seconds
  • the process gas supply time is set so that the gas supply period T is 45 seconds.
  • the gas supply cycle is 2 sec longer than the time required for one rotation of the wafer. Since the relative position of the gas supply nozzle does not synchronize until a considerable cycle, the in-plane film thickness uniformity can be further improved as compared with the case where the rotation position of the wafer and the relative position of the gas supply nozzle are synchronized.
  • the rotation position of the wafer and the relative position of the gas supply nozzle are synchronized, the gas is supplied again at the same location, and the film formed in the wafer region located upstream of the gas flow becomes thicker each time the gas is supplied. End up. For this reason, when the wafer is originally rotated, the distribution should be concentric and the uniformity should be improved. However, the effect cannot be obtained when the rotation period of the wafer and the gas supply period are synchronized.
  • the rotation period P and the gas supply period T are finely adjusted so as to satisfy the following formula (1).
  • the time for which the expression (1) should be satisfied it is sufficient if the time is satisfied within the film formation time.
  • the condition may be slightly weakened, for example, a time corresponding to 10 cycles (using the above symbol) If it does not synchronize (up to 10T (sec)), it is considered that the gas blowing timing is sufficiently dispersed and there is no problem in uniformity.
  • the rotation speed and angle position of the boat in the thin film thickness region and other regions are arbitrarily designated, and the wafer rotation cycle and the gas supply cycle are synchronized for a considerable time. It is possible to improve the uniformity of the film thickness distribution in the wafer surface. Moreover, the rotational speed of the boat can be changed according to the number of gas supply cycles (required film thickness).
  • the rotation speed for rotating the boat 217 is changed within one rotation based on the range based on the holding columns 217a to 217c holding the wafer 200. That is, the rotation speed for rotating the boat 217 is changed within one rotation based on the positions and intervals of the holding columns 217a to 217c. This is because when the boat 217 is rotated at a constant speed, the holding columns 217a to 217c of the boat 217 become shields against the flow of gas ejected, so that the in-wafer in-plane film thickness distribution is uniform. It gets worse around 217c.
  • the controller 121 controls the rotation mechanism 267 using the rotation speed and the angular position as parameters, and the gas is supplied without changing the preset time per rotation.
  • the controller 121 controls the rotation mechanism 267 using the rotation speed and the angular position as parameters, and the gas is supplied without changing the preset time per rotation.
  • the controller 121 passes the rotation speed of the boat 217 when the gas supply holes 250a and 250c at the time of gas supply pass within the range of ⁇ 15 degrees with respect to the holding columns 217a to 217c, for example, outside the range.
  • the rotation speed of the boat 217 is controlled by controlling the rotation mechanism 267 so as to be lower than the rotation speed of the boat 217.
  • a position (wafer notch position in this embodiment) facing the central holding column 217a is set as a reference (0 degree).
  • the angle position for changing the rotation speed of the boat 217 and the rotation speed at the angular position are set.
  • the time per rotation of the boat 217 is set to 62 seconds in advance.
  • the rotational speed r4 of 75 ° to 105 °, 165 ° to 195 °, and 255 ° to 285 °, which is ⁇ 15 ° from the holding column 217c, is 0.4 rpm
  • the holding column 217c This is a region where the holding columns 217c have a wide interval between 0 ° to 75 ° and 285 ° to 360 ° and the rotation speed r5 is 3.0 rpm, and there is no holding column 217c, and the intervals between the holding columns 217c are narrow.
  • the rotational speed r6 from 105 degrees to 165 degrees and from 195 degrees to 255 degrees is set to 1.3 rpm.
  • the controller 121 controls the rotation mechanism 267 using the above-described rotation speed and angular position as parameters, and the boat 217 rotates at a preset time per rotation.
  • the speed within one revolution the film thickness distribution in the circumferential direction can be adjusted, resulting in a concentric distribution, improving uniformity, and improving throughput by keeping the processing time constant. it can.
  • the time for supplying the DCS gas in step S3 to the wafer 200 is 5 seconds
  • the time for supplying the purge gas to the wafer 200 in step S4 is 10 seconds
  • the NH 3 gas in step S5 is used.
  • the time for supplying the wafer 200 is 20 seconds
  • the time for supplying the purge gas to the wafer 200 in step S6 is 10 seconds
  • the gas supply period T is 45 seconds.
  • the rotation speed of the boat 217 is increased when the holding columns 217a to 217c pass around the gas supply holes 250a and 250c, and the speed is reduced when passing through other regions. It may be set to be.
  • the rotation speed in each region is preferably set by the setting method described in the first embodiment.
  • the rotation mechanism 267 is controlled so as to change the rotation speed at which the boat 217 is rotated for each processing gas supply event, that is, for each gas supply process.
  • the controller 121 controls the rotation speed for each gas supply process using the gas supply time and the angular position of the rotation mechanism 267 as parameters, and changes the speed at which the boat 217 is rotated according to the gas supply process. By doing so, the uniformity of film thickness distribution in the wafer surface is improved.
  • the boat rotation speed when supplying the DCS gas in step S3 is 12 rpm
  • the boat rotation speed when supplying the purge gas in steps S4 and S6 is 6 rpm
  • the boat rotation speed when supplying NH 3 gas is set to 3 rpm.
  • the time for supplying the DCS gas in step S3 to the wafer 200 is 5 seconds
  • the time for supplying the purge gas in step S4 to the wafer 200 is 10 seconds
  • the time for supplying the NH 3 gas in step S5 to the wafer 200 is 20 seconds
  • the time for supplying the purge gas to the wafer 200 in step S6 is 10 seconds
  • the gas supply period T is 45 seconds.
  • the time required for one rotation of the boat 217 is the same as the time during which each gas is supplied, and the same gas is continuously supplied throughout the boat 217. It will be.
  • a predetermined film can be uniformly formed on the wafer 200 without worrying about the influence of the holding columns 217a to 217c.
  • the wafer surface thickness distribution uniformity is improved even in a process with a small number of cycles and a process with a short supply time. Can be made.
  • the present invention is not limited to such an embodiment, and the film is formed using at least two gas types.
  • the configuration to be applied can be preferably applied.
  • the present invention is not limited to such an aspect, and a configuration that changes at least once is preferable. It becomes possible to apply.
  • the present invention is not limited to such an embodiment, and the holding columns 217a to 217c are used. It is possible to preferably apply the setting configuration based on the mounting position of the wafer 200 held by any one of the above.
  • the reaction gas is converted into plasma and supplied into the processing chamber in the reaction gas supply step.
  • the present invention is not limited to such an embodiment, and the configuration does not use plasma such as heat treatment. Also, it is possible to suitably apply.
  • the present invention is not limited to such an embodiment, and the supply order of the raw material gas and the reactive gas may be reversed. That is, the source gas may be supplied after the reaction gas is supplied. By changing the supply order, the film quality and composition ratio of the formed film can be changed.
  • the SiN film is formed on the wafer 200
  • the present invention is not limited to such an embodiment, and a silicon oxide film (SiO film), a silicon oxycarbide film (SiOC film), a silicon oxycarbonitride film (SiOCN film), a silicon oxynitride film (SiON) is formed on the wafer 200.
  • a Si-based oxide film such as a film
  • SiBN film silicon boronitride film
  • SiBCN film silicon borocarbonitride film
  • borocarbonitride film SiBCN film
  • the present invention can also be suitably applied when forming a Si-based nitride film such as (BCN film).
  • a C-containing gas such as C 3 H 6
  • an N-containing gas such as NH 3
  • a B-containing gas such as BCl 3
  • titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W) is formed on the wafer 200.
  • the present invention can also be suitably applied to the case where an oxide film or a nitride film containing a metal element such as a metal oxide film or a metal nitride film is formed.
  • the present invention can be suitably applied to the case where a metal thin film such as a TiN film, a TiO film, a TiOC film, a TiOCN film, a TiON film, a TiBN film, or a TiBCN film is formed on the wafer 200. It becomes.
  • a metal thin film such as a TiN film, a TiO film, a TiOC film, a TiOCN film, a TiON film, a TiBN film, or a TiBCN film is formed on the wafer 200. It becomes.
  • tetrakis (dimethylamino) titanium gas tetrakis (ethylmethylamino) hafnium gas, tetrakis (ethylmethylamino) zirconium gas, trimethylaluminum gas, titanium tetrachloride gas, hafnium tetrachloride gas, etc.
  • the reaction gas described above can be used as the reaction gas.
  • the present invention can be suitably applied when a metalloid film containing a metalloid element or a metal film containing a metal element is formed.
  • the processing procedure and processing conditions of these film forming processes can be the same processing procedures and processing conditions as the film forming processes shown in the above-described embodiments and modifications. In these cases, the same effects as those of the above-described embodiments and modifications can be obtained.
  • the recipe used for the film forming process is individually prepared according to the processing content and stored in the storage device 121c via the telecommunication line or the external storage device 123.
  • the CPU 121a appropriately selects an appropriate recipe from a plurality of recipes stored in the storage device 121c according to the processing content.
  • the above-described recipe is not limited to a case of newly creating, but may be prepared by changing an existing recipe that has already been installed in the substrate processing apparatus, for example.
  • the changed recipe may be installed in the substrate processing apparatus via an electric communication line or a recording medium on which the recipe is recorded.
  • an existing recipe that has already been installed in the substrate processing apparatus may be directly changed by operating the input / output device 122 provided in the existing substrate processing apparatus.
  • Controller 200 wafer (substrate) 201 Processing chamber 207 Heater (heating device) 217 boat (substrate holder) 217a, 217b, 217c Holding columns 232a, 232b, 232c, 232d Gas supply pipe 237 Buffer chambers 249a, 249b Nozzles 250a, 250b, 250c Gas supply holes 267 Rotating mechanism 300 Buffer structure (buffer section)

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Abstract

La présente invention permet d'améliorer l'uniformité dans le plan du substrat de l'épaisseur d'un film formé. La présente invention comprend une chambre de traitement permettant de traiter un substrat, un outil de maintien de substrat permettant de maintenir le substrat dans la chambre de traitement, un mécanisme de rotation permettant d'amener l'outil de maintien de substrat à tourner, et une unité de commande permettant de commander le mécanisme de rotation et de commander la vitesse de rotation de l'outil de maintien de substrat. L'unité de commande est configurée de manière à commander le mécanisme de rotation de telle sorte que la vitesse de rotation de l'outil de maintien de substrat varie en une rotation, sans changer le temps requis pour une rotation, qui est défini à l'avance.
PCT/JP2017/009675 2017-03-10 2017-03-10 Dispositif de traitement de substrat, procédé de fabrication de dispositif à semi-conducteurs, et programme WO2018163399A1 (fr)

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JP2019504263A JPWO2018163399A1 (ja) 2017-03-10 2017-03-10 基板処理装置、半導体装置の製造方法及びプログラム
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