[go: up one dir, main page]

WO2018164746A3 - Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization - Google Patents

Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization Download PDF

Info

Publication number
WO2018164746A3
WO2018164746A3 PCT/US2017/064020 US2017064020W WO2018164746A3 WO 2018164746 A3 WO2018164746 A3 WO 2018164746A3 US 2017064020 W US2017064020 W US 2017064020W WO 2018164746 A3 WO2018164746 A3 WO 2018164746A3
Authority
WO
WIPO (PCT)
Prior art keywords
self
thermalization
localization
manufacture
low
Prior art date
Application number
PCT/US2017/064020
Other languages
French (fr)
Other versions
WO2018164746A2 (en
Inventor
Patrick Curran
Original Assignee
SemiNuclear, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2016/063933 external-priority patent/WO2018101905A1/en
Priority to RU2019120212A priority Critical patent/RU2756481C2/en
Priority to KR1020197018946A priority patent/KR102373619B1/en
Priority to CA3045318A priority patent/CA3045318A1/en
Priority to EP17899703.7A priority patent/EP3549155A4/en
Priority to MX2019006280A priority patent/MX2019006280A/en
Application filed by SemiNuclear, Inc. filed Critical SemiNuclear, Inc.
Priority to IL266966A priority patent/IL266966B2/en
Priority to JP2019548545A priority patent/JP7250340B2/en
Priority to CN201780084888.3A priority patent/CN110431652B/en
Publication of WO2018164746A2 publication Critical patent/WO2018164746A2/en
Publication of WO2018164746A3 publication Critical patent/WO2018164746A3/en
Priority to US16/425,582 priority patent/US11651957B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Silicon Compounds (AREA)
  • Particle Accelerators (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Various articles and devices can be manufactured to take advantage of what is believed to be a novel thermodynamic cycle in which spontaneity is due to an intrinsic entropy equilibration. The novel thermodynamic cycle exploits the quantum phase transition between quantum thermalization and quantum localization. Preferred devices include a phonovoltaic cell, a rectifier and a conductor for use in an integrated circuit.
PCT/US2017/064020 2015-05-28 2017-11-30 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization WO2018164746A2 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
CN201780084888.3A CN110431652B (en) 2017-03-15 2017-11-30 Processing and fabrication of low dimensional materials supporting self-thermalization and self-positioning
KR1020197018946A KR102373619B1 (en) 2017-03-15 2017-11-30 Process and manufacture of low-dimensional materials that support both self-thermal neutronization and self-localization
CA3045318A CA3045318A1 (en) 2016-11-29 2017-11-30 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization
EP17899703.7A EP3549155A4 (en) 2017-03-15 2017-11-30 PROCESS AND MANUFACTURING OF LOW-DIMENSIONAL MATERIALS WITH THE SUPPORT OF BOTH SELF-THERMALIZATION AND SELF-LOCALIZATION
MX2019006280A MX2019006280A (en) 2016-11-29 2017-11-30 PROCESS AND MANUFACTURE OF LOW-DIMENSION MATERILS THAT SUPPORT BOTH SELF-THERMALIZATION AND SELF-LOCATION.
RU2019120212A RU2756481C2 (en) 2016-11-29 2017-11-30 Technology and production of low-dimensional material that supports both self-thermalization and self-localization
IL266966A IL266966B2 (en) 2016-11-29 2017-11-30 Method and production of low-dimensional materials that support self-thermization and self-localization
JP2019548545A JP7250340B2 (en) 2017-03-15 2017-11-30 Processing and fabrication of low-dimensional materials that support both self-thermalization and self-localization
US16/425,582 US11651957B2 (en) 2015-05-28 2019-05-29 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
USPCT/US2016/063933 2016-11-29
PCT/US2016/063933 WO2018101905A1 (en) 2016-11-29 2016-11-29 Composition and method for making picocrystalline artificial borane atoms
US201762471815P 2017-03-15 2017-03-15
US62/471,815 2017-03-15
US201762591848P 2017-11-29 2017-11-29
US62/591,848 2017-11-29

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2016/063933 Continuation-In-Part WO2018101905A1 (en) 2015-05-28 2016-11-29 Composition and method for making picocrystalline artificial borane atoms

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US15/959,463 Continuation US11521853B2 (en) 2015-05-28 2018-04-23 Composition and method for making picocrystalline artificial borane atoms
US16/425,582 Continuation US11651957B2 (en) 2015-05-28 2019-05-29 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization

Publications (2)

Publication Number Publication Date
WO2018164746A2 WO2018164746A2 (en) 2018-09-13
WO2018164746A3 true WO2018164746A3 (en) 2018-12-06

Family

ID=68407930

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2017/064020 WO2018164746A2 (en) 2015-05-28 2017-11-30 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization

Country Status (7)

Country Link
EP (1) EP3549155A4 (en)
JP (1) JP7250340B2 (en)
KR (1) KR102373619B1 (en)
CN (1) CN110431652B (en)
CA (1) CA3045318A1 (en)
IL (1) IL266966B2 (en)
WO (1) WO2018164746A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11220747B2 (en) * 2018-10-29 2022-01-11 Applied Materials, Inc. Complementary pattern station designs
CN111470577A (en) * 2020-04-15 2020-07-31 苏州正奥水生态技术研究有限公司 Sewage treatment photon carrier and preparation method and use method thereof
CN115903279B (en) * 2022-10-12 2023-10-03 北京大学 A method and application of spectral emissivity control based on isotope engineering

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818625A (en) * 1985-06-24 1989-04-04 Lockheed Missiles & Space Company, Inc. Boron-silicon-hydrogen alloy films
US5872368A (en) * 1995-11-30 1999-02-16 The United States Of America As Represented By The Secretary Of The Navy Method of controlling a super conductor
US6025611A (en) * 1996-09-20 2000-02-15 The Board Of Regents Of The University Of Nebraska Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
US7148523B2 (en) * 2002-09-11 2006-12-12 Sony Corporation Molecular rectifier device
US20070037360A1 (en) * 2005-08-11 2007-02-15 Dongbu Electronics Co., Ltd. Semiconductor device using EPI-layer and method of forming the same
US7795735B2 (en) * 2007-03-21 2010-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for forming single dies with multi-layer interconnect structures and structures formed therefrom
US20100313952A1 (en) * 2009-06-10 2010-12-16 Thinsilicion Corporation Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks
US20110260047A1 (en) * 2010-04-21 2011-10-27 Axcelis Technologies, Inc. Silaborane implantation processes
US8633518B2 (en) * 2007-09-17 2014-01-21 Transphorm Inc. Gallium nitride power devices
US20140291809A1 (en) * 2008-05-19 2014-10-02 Infineon Technologies Ag Semiconductor Substrate and a Method of Manufacturing the Same
WO2015186625A1 (en) * 2014-06-03 2015-12-10 株式会社日本製鋼所 Method for producing semiconductor having gettering layer, method for manufacturing semiconductor device, and semiconductor device
US20160351286A1 (en) * 2015-05-28 2016-12-01 SemiNuclear, Inc. Composition and method for making picocrystalline artificial carbon atoms
US20170076942A1 (en) * 2015-05-28 2017-03-16 SemiNuclear, Inc. Composition and Method for Making Picocrystalline Artificial Borane Atoms

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432539A (en) * 1965-06-30 1969-03-11 Du Pont Icosahedral dodecahydrododecaborane derivatives and their preparation
US6479919B1 (en) * 2001-04-09 2002-11-12 Terrence L. Aselage Beta cell device using icosahedral boride compounds
KR101396432B1 (en) * 2012-08-02 2014-05-21 경희대학교 산학협력단 Semiconductor device and method for fabricating the same

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818625A (en) * 1985-06-24 1989-04-04 Lockheed Missiles & Space Company, Inc. Boron-silicon-hydrogen alloy films
US5872368A (en) * 1995-11-30 1999-02-16 The United States Of America As Represented By The Secretary Of The Navy Method of controlling a super conductor
US6025611A (en) * 1996-09-20 2000-02-15 The Board Of Regents Of The University Of Nebraska Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
US7148523B2 (en) * 2002-09-11 2006-12-12 Sony Corporation Molecular rectifier device
US20070037360A1 (en) * 2005-08-11 2007-02-15 Dongbu Electronics Co., Ltd. Semiconductor device using EPI-layer and method of forming the same
US7795735B2 (en) * 2007-03-21 2010-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for forming single dies with multi-layer interconnect structures and structures formed therefrom
US8633518B2 (en) * 2007-09-17 2014-01-21 Transphorm Inc. Gallium nitride power devices
US20140291809A1 (en) * 2008-05-19 2014-10-02 Infineon Technologies Ag Semiconductor Substrate and a Method of Manufacturing the Same
US20100313952A1 (en) * 2009-06-10 2010-12-16 Thinsilicion Corporation Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks
US20110260047A1 (en) * 2010-04-21 2011-10-27 Axcelis Technologies, Inc. Silaborane implantation processes
WO2015186625A1 (en) * 2014-06-03 2015-12-10 株式会社日本製鋼所 Method for producing semiconductor having gettering layer, method for manufacturing semiconductor device, and semiconductor device
US20160351286A1 (en) * 2015-05-28 2016-12-01 SemiNuclear, Inc. Composition and method for making picocrystalline artificial carbon atoms
US20170076942A1 (en) * 2015-05-28 2017-03-16 SemiNuclear, Inc. Composition and Method for Making Picocrystalline Artificial Borane Atoms

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
BALAKRISHNARAJAN, MM ET AL.: "Structure and bonding in boron carbide: The invincibility of imperfections", NEW JOURNAL OF CHEMISTRY, vol. 31, 27 February 2007 (2007-02-27), pages 473 - 485, XP055554030 *
HALLAM, B ET AL.: "Modelling kinetics of the boron-oxygen defect system", ENERGY PROCEDIA, vol. 92, 1 August 2016 (2016-08-01), pages 42 - 51, XP029715849 *
LIM, B ET AL.: "Generation and annihilation of boron-oxygen-related recombination centers in compensate p- and n-type silicon", JOURNAL OF APPLIED PHYSICS, vol. 108, no. 10, 15 November 2010 (2010-11-15), XP012141927 *
OLIVA, JM ET AL.: "On the electronic structure and stability of icosahedral r-X2Z10H12 and Z12H122- clusters; r = {ortho, meta, para}, X = {C, Si}, Z = {B, Al", PHYSICAL CHEMISTRY CHEMICAL PHYSICS, vol. 12, 26 March 2010 (2010-03-26), pages 5101 - 5108, XP055554041 *
PALMER, DW ET AL.: "Kinetics of the electronically stimulated formation of a boron-oxygen complex in crystalline silicon", PHYSICAL REVIEW B, vol. 76, no. 3, 30 July 2007 (2007-07-30), XP055038835 *
SUN, X: "Two-Dimensional Boron Crystals: Structural Stability, Tunable Properties, Fabrications and Applications", ADVANCED FUNCTIONAL MATERIALS, vol. 27, no. 19, 11 November 2016 (2016-11-11), XP055554036 *
ZHANG, Y: "Epitaxial growth of icosahedral boron arsenide on silicon carbide substrates: Improved process conditions and electrical properties", A DISSERTATION, 2011, pages 1 , 77 - 79, XP055554015, Retrieved from the Internet <URL:http://krex.k-state.edu/dspace/bitstream/handle/2097/13122/YiZhang2011.pdf?sequence=3> [retrieved on 20180904] *

Also Published As

Publication number Publication date
CN110431652A (en) 2019-11-08
JP7250340B2 (en) 2023-04-03
CA3045318A1 (en) 2018-09-13
IL266966B2 (en) 2024-03-01
WO2018164746A2 (en) 2018-09-13
KR20190126765A (en) 2019-11-12
EP3549155A4 (en) 2020-09-30
IL266966B1 (en) 2023-11-01
EP3549155A2 (en) 2019-10-09
CN110431652B (en) 2023-12-29
IL266966A (en) 2019-07-31
JP2020515057A (en) 2020-05-21
KR102373619B1 (en) 2022-03-15

Similar Documents

Publication Publication Date Title
WO2018164746A3 (en) Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization
MY183792A (en) Free-standing metallic article for semiconductors
WO2016138546A3 (en) Inductance sensing
MY171950A (en) Free-standing metallic article for semiconductors
MY175462A (en) Polyethylene resin foamed particles, polyethylene resin in-mold foam-molded article, and production methods thereof
EP4407860A3 (en) Athletic activity monitoring device with energy capture
WO2006020940A3 (en) Stretch fabrics with improved heat-setting properties
WO2015095585A3 (en) Sysnthesis of oxycodone hydrochloride
WO2015015445A3 (en) Process for preparing synthetic para-eugenol
MX2017005135A (en) Improved flexible package and methods of making same.
CN105111639A (en) Novel plastic product
TW201612528A (en) Zero-crossing voltage detection circuit and method thereof
Cotterill et al. Singular rational curves with points of nearly-maximal weight
MX2019006280A (en) PROCESS AND MANUFACTURE OF LOW-DIMENSION MATERILS THAT SUPPORT BOTH SELF-THERMALIZATION AND SELF-LOCATION.
WO2019079258A3 (en) Anode material - method of production and solid-state battery made therewith
WO2019112580A9 (en) Ancillary objects in object generation
Vilan et al. Molecular functionalization of surfaces for device applications
CN203544745U (en) File box type mooncake box
CN204218583U (en) adjustable drying rack
CN204110500U (en) A kind of multi-layer packing bottle
Liu Arbitrary many peak solutions for a bi-harmonic equation with nearly critical growth
CN203662389U (en) Depth-adjustable bag-typed mattress cover
Petrović et al. Retraction Notice to: Influence of External Disturbances to Dynamic Balance of the Semi-Anthropomimetic Robot
Efimov Mac Lane (co) homology of the second kind and Wieferich primes
RU2013131890A (en) METHOD FOR PRODUCING HOLLOW ARTICLES FROM SHEET METAL

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17899703

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 3045318

Country of ref document: CA

Ref document number: 2019548545

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20197018946

Country of ref document: KR

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 2017899703

Country of ref document: EP

Effective date: 20190701

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17899703

Country of ref document: EP

Kind code of ref document: A2

WWG Wipo information: grant in national office

Ref document number: MX/A/2019/006280

Country of ref document: MX