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WO2018169298A1 - Capteur d'empreinte digitale à ultrasons et son procédé de fabrication - Google Patents

Capteur d'empreinte digitale à ultrasons et son procédé de fabrication Download PDF

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Publication number
WO2018169298A1
WO2018169298A1 PCT/KR2018/002970 KR2018002970W WO2018169298A1 WO 2018169298 A1 WO2018169298 A1 WO 2018169298A1 KR 2018002970 W KR2018002970 W KR 2018002970W WO 2018169298 A1 WO2018169298 A1 WO 2018169298A1
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WO
WIPO (PCT)
Prior art keywords
piezoelectric
sensor
silicon substrate
ultrasonic fingerprint
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2018/002970
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English (en)
Korean (ko)
Inventor
박상영
박영태
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BEFS Co Ltd
Original Assignee
BEFS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BEFS Co Ltd filed Critical BEFS Co Ltd
Publication of WO2018169298A1 publication Critical patent/WO2018169298A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Definitions

  • the present invention relates to an ultrasonic fingerprint sensor and a method of manufacturing the same.
  • Biometrics is a technology that provides a high level of security, and fingerprint technology is one of the important biometric technologies.
  • fingerprint recognition extracts a specific pattern or feature point (for example, a branching point at which the ridge of the fingerprint branches, a disadvantage of ending the ridge) from a fingerprint image formed by receiving a fingerprint from the user, and a pattern of a pre-stored fingerprint image or It is performed to contrast with the feature point.
  • a specific pattern or feature point for example, a branching point at which the ridge of the fingerprint branches, a disadvantage of ending the ridge
  • the fingerprint sensor for recognizing a user's fingerprint may be manufactured in the form of a module including a peripheral component or a structure, for example, and may be implemented integrally with a physical function key. have.
  • FIG 1 schematically illustrates the configuration of an ultrasonic fingerprint sensor according to the prior art.
  • the ultrasonic fingerprint sensor is in a first direction to be electrically connected to a plurality of piezoelectric rods 100 arranged to form a sensor array, and upper ends of the plurality of piezoelectric rods 100.
  • the depicted reference numeral 102 denotes a shielding layer, which is a protective coating formed on top of the first electrode bar 106 so that the finger is placed in proximity to the sensor array
  • reference numeral 104 denotes a sensor array opposite the shielding layer 102.
  • the support is attached to the end of the support for supporting the plurality of piezoelectric rods 100 from the bottom.
  • the piezoelectric rod 100 is formed of a material having piezo characteristics, for example, PZT (lead zirconate titanate), PST, Quartz, (Pb, Sm) TiO3, PMN (Pb (MgNb) O3
  • the material may include at least one of) -PT (PbTiO3), PVDF, or PVDF-TrFe.
  • a voltage having a resonant frequency of an ultrasonic band is applied to the first electrode bar 106 connected to the upper end of the piezoelectric rod 100 and the second electrode bar 108 connected to the lower end of the piezoelectric rod 100 to thereby move the piezoelectric rod 100 up and down.
  • the ultrasonic signal having a predetermined frequency is generated and emitted as illustrated in FIG.
  • the ultrasonic signal emitted from the piezoelectric rod 100 does not pass through the interface between the piezoelectric rod 100 and the air and returns to the inside of the piezoelectric rod 100.
  • a part of the emitted ultrasonic signal penetrates the interface between the skin of the finger and the piezoelectric rod 100 and proceeds to the inside of the finger.
  • the pattern can be detected.
  • the present invention improves the process of attaching a rigid panel for finger contact on the upper electrode bar, thereby eliminating the process of attaching the dummy panel for forming the sensor array and the process of forming a protective coating for the finger contact position. It is possible to provide an ultrasonic fingerprint sensor and a method of manufacturing the same, which can simplify the manufacturing process.
  • the present invention forms a via hole electrically conductive with the upper electrode bar so that the upper electrode bar and the lower electrode bar can be connected to the external terminal at the same height, thereby improving the convenience and process efficiency of manufacturing an ultrasonic fingerprint sensor package. It is an object of the present invention to provide an ultrasonic fingerprint sensor and a method of manufacturing the same.
  • a method of manufacturing an ultrasonic fingerprint sensor comprising: forming a plurality of piezoelectric rods using a plurality of first grooves formed in a predetermined sensor region of a silicon substrate; Forming a plurality of second grooves to function as via holes in an edge region of the silicon substrate previously designated to be positioned outside the sensor region; Forming a plurality of first electrode bars in a first direction, the plurality of first electrode bars being energized with conductive materials formed in corresponding via holes, respectively, and electrically connected to upper ends of the plurality of piezoelectric rods; Attaching a rigid panel to upper surfaces of the plurality of first electrode bars, the silicon substrate, and the piezoelectric rod; Planarizing (CMP) a lower surface of the silicon substrate so that the via holes and lower ends of the plurality of piezoelectric rods are exposed to the outside; Removing the silicon substrate in the sensor region and filling an insulating material in a space from which the silicon substrate is removed;
  • CMP Planarizing
  • the forming of the plurality of piezoelectric rods may include forming a plurality of first grooves in the sensor region by using a mask in which a sensor array shape is previously patterned; Forming a barrier film in the sensor region; And a predetermined piezoelectric material in the form of powder filled in each of the plurality of first grooves on which the barrier film is formed may be sintered to form a piezoelectric rod.
  • the ultrasonic fingerprint sensor includes a sensor substrate and a silicon substrate which is in contact with an outer portion of the sensor region and is maintained as an edge region, wherein the edge region is formed to surround all the outer sides of the sensor region, or a side portion of the sensor region. May be formed to expose some.
  • the width of the edge region where the via hole is formed may be formed relatively thicker than the width of the edge region where the via hole is not formed.
  • the vertical cross section of the ultrasonic fingerprint sensor may be arranged in the order of the silicon substrate, the insulating material, and the piezoelectric rod on which the via hole is formed.
  • the rigid panel may be attached using an epoxy resin.
  • the rigid panel comprises at least one of a glass panel and a plastic panel having a predetermined hardness.
  • an ultrasonic fingerprint sensor manufactured by the manufacturing method of the ultrasonic fingerprint sensor described above.
  • a plurality of piezoelectric rods are arranged to form a sensor array and an insulating material is formed to fill a periphery of each piezoelectric rod, and one of the sides of the sensor region.
  • a piezoelectric layer comprising a silicon substrate in contact with the above to form an edge region; A plurality of first electrode bars disposed in a first direction along an upper surface of the piezoelectric layer; A plurality of second electrode bars disposed in a direction orthogonal to a first direction along a lower surface of the piezoelectric layer; And a rigid panel attached to an upper surface of the piezoelectric layer and an upper portion of the first electrode bar, wherein a plurality of via holes corresponding to each of the plurality of first electrode bars are formed in the edge area.
  • the lower end is provided with an ultrasonic fingerprint sensor, characterized in that the electrode portion is formed.
  • a process of attaching a dummy panel for forming a sensor array and a protective coating on a finger contact position by improving a process of attaching a rigid panel for contacting a finger on an upper electrode bar is performed.
  • Forming process can be omitted, there is an effect that the manufacturing process is simplified.
  • the upper electrode bar and the lower electrode bar can be connected to the external terminal at the same height, thereby increasing the convenience and process efficiency of manufacturing an ultrasonic fingerprint sensor package. There is also an effect.
  • FIG. 1 is a view schematically showing the configuration of an ultrasonic fingerprint sensor according to the prior art.
  • FIG. 2 is a view for explaining the shape and operation of the piezoelectric rod according to the prior art.
  • FIG 3 is a cross-sectional view of the ultrasonic fingerprint sensor and a plan view of a piezoelectric layer according to an embodiment of the present invention.
  • FIGS. 4 and 5 are views for explaining a manufacturing process of the ultrasonic fingerprint sensor according to an embodiment of the present invention.
  • first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.
  • an element such as a layer, region or substrate is described as being on or “onto” another element, the element may be directly above or directly above another element and There may be intermediate or intervening elements. On the other hand, if one element is mentioned as being “directly on” or extending "directly onto” another element, no other intermediate elements are present. In addition, when one element is described as being “connected” or “coupled” to another element, the element may be directly connected to or directly coupled to another element, or an intermediate intervening element may be present. have. On the other hand, when one element is described as being “directly connected” or “directly coupled” to another element, no other intermediate element exists.
  • FIG 3 is a cross-sectional view of the ultrasonic fingerprint sensor and a plan view of a piezoelectric layer according to an embodiment of the present invention.
  • the ultrasonic fingerprint sensor may be conveniently divided into a rigid panel layer, a piezoelectric layer, and an electrode layer.
  • the rigid panel layer may include the rigid panel 250
  • the piezoelectric layer may be formed of the silicon substrate 210, the piezoelectric rod 230, and the insulating material 255.
  • the electrode layer may include a first electrode bar 245, a second electrode bar 260, and an electrode unit 270.
  • the piezoelectric layer formed by using the silicon substrate 210 is processed so that only the edge region of the silicon substrate 210 is maintained, and the via hole 240 is formed in a plurality of places of the silicon substrate 210 having only the edge region. Each is formed. Each via hole 240 may be formed at a position corresponding to each of the first electrode bars 245 which will be described later.
  • a region formed of the piezoelectric rod 230 and the insulating material 255 as a region other than the edge held by the silicon substrate 210 may be referred to as a sensor region.
  • 3B illustrates a case in which the silicon substrate 210 is maintained on all four sides of the edge so as to surround all of the sensor regions.
  • the edge 1 is based on the sensor region in consideration of the formation position of the via hole 240.
  • the silicon substrate 210 may be processed to be held only at the side or the two sides.
  • a plurality of piezoelectric rods 230 are arranged to form a sensor array, and the space between the respective piezoelectric rods 230 constituting the sensor array and the outermost piezoelectric layer.
  • the space between the rods 230 and the silicon substrate 210 at the edge is filled with insulating material 255.
  • the piezoelectric layer includes a silicon substrate 210 having a via hole 240 formed in a horizontal direction from a sidewall, an insulating material 255, a piezoelectric rod 230, an insulating material 255, and a piezoelectric material. It is arranged in the order of the rod 230.
  • the width of the silicon substrate 210 forming the edge of the piezoelectric layer may be sufficient as long as the via hole 240 can be stably formed at an appropriate location.
  • the width of the silicon substrate 210 is appropriately determined in the same total area, the size of the sensor array to be formed in the inner space may be adjusted to suit the set purpose.
  • the width of the edge region where the via hole 235 is formed is increased.
  • the via hole 235 may be formed relatively thicker than the width of the edge area where the via hole 235 is not formed.
  • Each piezoelectric rod 230 formed in the shape of a bar or rod having a predetermined length has a piezo characteristic, for example, PZT (lead zirconate titanate), PST, quartz, ( Pb, Sm) TiO 3, PMN (Pb (MgNb) O 3) -PT (PbTiO 3), PVDF, or PVDF-TrFe may be formed of a material including at least one material.
  • a plurality of first electrode bars 245 arranged in a first direction are formed at upper ends of the piezoelectric layers to be electrically connected to upper ends of the plurality of piezoelectric rods 230 (see FIG. 1).
  • a plurality of second electrode bars 260 arranged in a second direction orthogonal to the first direction are formed at the lower end of the piezoelectric layer to be electrically connected to the lower ends of the plurality of piezoelectric rods 230.
  • an electrode unit 270 may be formed at a lower portion of each via hole 240 electrically connected to each of the first electrode bars 245.
  • the wire bonding or the like may be used.
  • Each of the first electrode bar 245 and the second electrode bar 260 may be easily connected to an external terminal without an additional process.
  • the second electrode bar 260, the electrode portion 270, and the lower part of the piezoelectric layer are electrically insulated so as to be electrically connected to an external terminal without the risk of an electrical short.
  • Ink (PSR ink) 285 may be applied (PSR).
  • the rigid panel 250 is attached to the first electrode bar 245 and the piezoelectric layer using the epoxy resin 280.
  • the rigid panel 250 may be formed of, for example, glass or plastic having a predetermined hardness.
  • the epoxy resin 280 to be used as the adhesive material may be determined as a material having a property of not suppressing vertical vibration of the piezoelectric rod 230.
  • FIGS. 4 and 5 are views for explaining a manufacturing process of the ultrasonic fingerprint sensor according to an embodiment of the present invention.
  • the photoresist (PR) 215 is coated on the upper surface of the silicon substrate 210 (step (a)), and the exposure and the exposure of the sensor array shape to be fabricated using a mask patterned in advance. Development is carried out (step (b)).
  • step (c) an etching (silicon etching) process is performed to dig the first groove to a predetermined depth in order to introduce a predetermined piezoelectric material (for example, PZT, etc.) into the silicon substrate 210.
  • a predetermined piezoelectric material for example, PZT, etc.
  • Each groove is formed of a piezoelectric rod 230 as described below.
  • the photoresist coated on the silicon substrate 210 is removed to form a silicon mold.
  • a piezoelectric material in a powder state is filled in each of the plurality of first grooves etched and formed in the silicon substrate 210, and a sintering process is performed.
  • the sintering process is a process in which powders filled by heating to a predetermined temperature are deposited on each bonding surface to form a mass.
  • a passivation process for forming a barrier film 220 for preventing a reaction between the silicon substrate 210 and the piezoelectric material due to the high temperature of the sintering process is preceded before filling the grooves with the piezoelectric material 225 in the powder state. May be
  • the chemical mechanical polishing (CMP) to planarize the top surface of the piezoelectric layer in step (e) to fill each groove so that the sintered piezoelectric material 225 is formed into each piezoelectric rod 230.
  • CMP chemical mechanical polishing
  • the second groove 235 is formed in the edge region of the silicon substrate 210 in which the piezoelectric rod 230 is formed in step (e). As described below, the second groove 235 is formed to correspond to the position where the plurality of first electrode bars 245 are to be formed, and functions as a via hole 240 electrically connected to the first electrode bars 245. It is to.
  • the second groove 235 may be formed by, for example, the same process as that of the steps (a) to (c) described above.
  • step (f) the plurality of plurality of electrodes arranged in the first direction to be electrically connected with the metal film formed in the corresponding second groove 235 and also electrically connected to the upper ends of the plurality of piezoelectric rods 230.
  • the first electrode bar 245 is formed.
  • the process of forming the first electrode bar includes, for example, a sputtering process of depositing a metal (for example, Au / Ti, etc.) to form an electrode in the via hole 240 and an upper surface of the piezoelectric layer.
  • a metal for example, Au / Ti, etc.
  • the thickness of the metal formed in the sputtering process may be increased, and the metal film formed in the via hole 240 may be formed in an electroplating process of increasing the thickness so that the metal film is electrically connected to the first electrode bar 245.
  • the rigid panel 250 is attached to the first electrode bar 245 and the piezoelectric layer using the epoxy resin 280.
  • the rigid panel 250 may be formed of, for example, glass or a plastic having a predetermined hardness, and the epoxy resin 280 has flexibility and does not prevent vertical vibration of the piezoelectric rod 230.
  • the rigid panel 250 described above is used as a work surface to which a finger is to be touched to receive a fingerprint. Since the rigid panel 250 is attached immediately after the formation of the first electrode bar 245, a process of temporarily attaching the dummy panel for the operation of filling an insulating material between the piezoelectric rods 230 to be described later may be omitted. In addition, there is an advantage that the process of applying a protective coating on the piezoelectric layer after the formation of the second electrode bar 260 can be omitted.
  • step (h) a chemical mechanical polishing (CMP) process is performed on the lower surface of the piezoelectric layer so that the lower end of the formed piezoelectric rod 230 and the metal film in the via hole 240 are exposed to the lower portion of the piezoelectric layer.
  • Step (h) to step (k) to be described later may be performed in a state in which the ultrasonic fingerprint sensor formed in the above-mentioned steps (a) to (g) is inverted.
  • step (i) the silicon existing between the piezoelectric rods 230 constituting the sensor array (that is, the silicon existing as a partition between the piezoelectric rods) is removed.
  • a deep reactive ion etching (DRIE) technique may be used, and a portion of the silicon region located at the edge of the silicon substrate 210 may also be inserted into the insulating material 255 which will be described later. Can be removed.
  • DRIE deep reactive ion etching
  • step (j) an insulating material filling process is performed in which the insulating material 255 is inserted between the piezoelectric rods 230 and also between the outermost piezoelectric rod 230 and the silicon substrate 210.
  • the insulating material 255 may be a material of a flexible material that does not suppress the piezoelectric rod 230 from vibrating up and down when a voltage having a resonance frequency is applied.
  • the insulating material filling process may be made of, for example, an insulating material coating on the entire lower surface of the piezoelectric layer, and when the lower end of the piezoelectric rod 230 or the like is covered with the insulating material 255 by coating the insulating material 255 A CMP process may be further performed to expose the rod 230 to the outside.
  • step (k) a plurality of second electrode bars 260 arranged in a second direction orthogonal to the first direction are formed to be electrically connected to the lower ends of the plurality of piezoelectric rods 230.
  • each electrode part 270 is formed to be electrically connected to the exposed metal film through each via hole 240.
  • the first electrode bar 245 and the second electrode bar 260 are structured to be connected to the external terminal at substantially the same height, so that the convenience and process efficiency of the ultrasonic fingerprint sensor package manufacturing can be achieved. There is this.
  • the generated ultrasonic fingerprint sensor when assembled to the lower part of the second electrode bar 260, the electrode part 270, and the piezoelectric layer, it may be electrically connected to an external terminal without the risk of an electrical short.
  • PSR may be applied to the PSR ink 285.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Image Input (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)

Abstract

La présente invention concerne un capteur d'empreinte digitale à ultrasons et son procédé de fabrication. Le capteur d'empreinte à ultrasons comprend : une couche piézoélectrique comprenant une région de capteur ayant une pluralité de tiges piézoélectriques agencées de façon à former un réseau de capteurs et ayant un matériau isolant formé pour remplir la périphérie de chaque tige piézoélectrique, et un substrat de silicium venant en contact avec au moins une des surfaces latérales de la région de capteur de façon à former une région de bord ; une pluralité de premières barres d'électrode agencées dans une première direction le long de la surface supérieure de la couche piézoélectrique ; une pluralité de secondes barres d'électrode agencées dans une direction orthogonale à la première direction, le long de la surface inférieure de la couche piézoélectrique ; et un panneau rigide fixé à la surface supérieure de la couche piézoélectrique et à une partie supérieure de la première barre d'électrode.
PCT/KR2018/002970 2017-03-16 2018-03-14 Capteur d'empreinte digitale à ultrasons et son procédé de fabrication Ceased WO2018169298A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20170033123 2017-03-16
KR10-2017-0033123 2017-03-16

Publications (1)

Publication Number Publication Date
WO2018169298A1 true WO2018169298A1 (fr) 2018-09-20

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110232363A (zh) * 2019-06-18 2019-09-13 京东方科技集团股份有限公司 超声波指纹识别传感器及其制备方法、显示装置
CN110265544A (zh) * 2019-06-24 2019-09-20 京东方科技集团股份有限公司 压电传感器及制备方法、进行指纹识别的方法及电子设备
CN112216784A (zh) * 2019-07-12 2021-01-12 茂丞科技(深圳)有限公司 晶圆级超声波感测装置及其制造方法

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KR101661634B1 (ko) * 2016-03-11 2016-09-30 주식회사 베프스 복수의 압전 소자를 선택적으로 활성화 시키는 방법 및 이를 위한 생체정보 인식장치

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KR20110138257A (ko) * 2009-03-23 2011-12-26 소나베이션, 인크. 개량된 압전 식별 장치 및 그 응용
KR20130060875A (ko) * 2011-11-30 2013-06-10 삼성전기주식회사 지문 인식 센서 및 지문 인식 방법
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KR101661634B1 (ko) * 2016-03-11 2016-09-30 주식회사 베프스 복수의 압전 소자를 선택적으로 활성화 시키는 방법 및 이를 위한 생체정보 인식장치

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110232363A (zh) * 2019-06-18 2019-09-13 京东方科技集团股份有限公司 超声波指纹识别传感器及其制备方法、显示装置
CN110232363B (zh) * 2019-06-18 2021-12-07 京东方科技集团股份有限公司 超声波指纹识别传感器及其制备方法、显示装置
US11521416B2 (en) 2019-06-18 2022-12-06 Beijing Boe Technology Development Co., Ltd. Ultrasonic fingerprint recognition sensor and manufacturing method thereof, and display device
CN110265544A (zh) * 2019-06-24 2019-09-20 京东方科技集团股份有限公司 压电传感器及制备方法、进行指纹识别的方法及电子设备
CN112216784A (zh) * 2019-07-12 2021-01-12 茂丞科技(深圳)有限公司 晶圆级超声波感测装置及其制造方法

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