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WO2018179265A1 - Dispositif d'affichage, procédé de fabrication de dispositif d'affichage et appareil de fabrication de dispositif d'affichage - Google Patents

Dispositif d'affichage, procédé de fabrication de dispositif d'affichage et appareil de fabrication de dispositif d'affichage Download PDF

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Publication number
WO2018179265A1
WO2018179265A1 PCT/JP2017/013355 JP2017013355W WO2018179265A1 WO 2018179265 A1 WO2018179265 A1 WO 2018179265A1 JP 2017013355 W JP2017013355 W JP 2017013355W WO 2018179265 A1 WO2018179265 A1 WO 2018179265A1
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WO
WIPO (PCT)
Prior art keywords
display device
layer
terminal
conduction hole
manufacturing
Prior art date
Application number
PCT/JP2017/013355
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English (en)
Japanese (ja)
Inventor
薫 安部
山渕　浩二
伸一 川戸
Original Assignee
シャープ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to PCT/JP2017/013355 priority Critical patent/WO2018179265A1/fr
Publication of WO2018179265A1 publication Critical patent/WO2018179265A1/fr

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/06—Electrode terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Definitions

  • the present invention relates to a display device.
  • Patent Document 1 describes a configuration in which a flexible printed circuit board (FPC) is mounted on a device including an organic EL element.
  • FPC flexible printed circuit board
  • a display device includes a lower layer portion and a light emitting element layer formed in an upper layer than the lower layer portion, and the lower layer portion includes a terminal portion including a terminal electrode and the terminal portion.
  • the lower layer portion includes a terminal portion including a terminal electrode and the terminal portion.
  • the frame portion surrounding the display area can be reduced.
  • FIG. 3 is a cross-sectional view illustrating a configuration example of a display device (non-display area) according to Embodiment 1.
  • FIG. 4 is a flowchart showing a film forming process and a mounting process in the first embodiment.
  • 6 is a plan view showing a film forming process and a mounting process in Embodiment 1.
  • FIG. 5 is a cross-sectional view illustrating a film forming process and a mounting process in Embodiment 1.
  • FIG. FIG. 10 is a plan view showing a modification of the first embodiment.
  • FIG. 6 is a cross-sectional view showing a modification of the first embodiment. It is a block diagram which shows the structure of the display device manufacturing apparatus of this embodiment. 10 is a flowchart illustrating a film forming process and a mounting process in the second embodiment. 6 is a plan view showing a film forming process and a mounting process in Embodiment 2.
  • FIG. 10 is a cross-sectional view showing a film forming process and a mounting process in Embodiment 2.
  • FIG. 6 is a plan view illustrating a configuration of a display device according to Embodiment 3.
  • FIG. 10 is a cross-sectional view showing a modification of the third embodiment. 10 is a plan view showing another configuration of the display device of Embodiment 3.
  • FIG. 10 is a plan view illustrating another configuration of the display device of Embodiment 3.
  • FIG. 1 is a flowchart illustrating an example of a method for manufacturing a display device
  • FIG. 2A is a cross-sectional view illustrating a configuration example of a display device (display region) according to Embodiment 1
  • FIG. 3 is a cross-sectional view illustrating a configuration example of a display device (non-display area) according to Embodiment 1.
  • FIG. FIG. 3 is a cross-sectional view illustrating a configuration example of the display device (non-display area) according to the first embodiment.
  • a resin layer 12 is formed on a translucent support 50 (for example, a glass substrate) (step S1).
  • the barrier layer 3 is formed (step S2).
  • the TFT layer 4 including the semiconductor film 15, the gate electrode G, the source electrode S, the drain electrode D, and the inorganic insulating films 16, 18, and 20 is formed (step S3).
  • a light emitting element layer (for example, OLED element layer) 5 is formed (step S4).
  • the sealing layer 6 including the inorganic sealing films 26 and 28 and the organic sealing film 27 is formed (step S5).
  • the top film 9 is pasted on the sealing layer 6 via the adhesive layer 8 (step S6).
  • the lower surface of the resin layer 12 is irradiated with laser light through the support 50 (step S7).
  • the resin layer 12 absorbs the laser beam irradiated to the lower surface of the support 50 and transmitted through the support 50, whereby the lower surface of the resin layer 12 (interface with the support 50) is altered by ablation, and the resin The bonding force between the layer 12 and the support 50 is reduced.
  • the support 50 is peeled from the resin layer 12 (step S8).
  • the lower film 10 for example, PET
  • the laminated body with the bottom film is divided and separated into pieces (step S10).
  • step S11 the functional film 39 is pasted through the adhesive layer 38 (step S11).
  • an electronic circuit board 60 (for example, FPC) is mounted on the back surface of the terminal portion of the TFT layer 4 to obtain the singulated display device 2 shown in FIGS. 2B and 3 (step S12).
  • Each step is performed by a display device manufacturing apparatus.
  • Examples of the material of the lower film 10 include polyethylene terephthalate (PET).
  • Examples of the material of the resin layer 12 include polyimide, epoxy, polyamide, and acrylic.
  • the barrier layer 3 is a layer that prevents moisture and impurities from reaching the TFT layer 4 and the light emitting element layer 5 when the display device is used.
  • the barrier layer 3 is formed by CVD, such as a silicon oxide film, a silicon nitride film, Alternatively, a silicon oxynitride film or a laminated film thereof can be used.
  • the thickness of the inorganic barrier layer 3 is, for example, 50 nm to 1500 nm.
  • the TFT layer 4 includes a semiconductor film 15, an inorganic insulating film 16 (gate insulating film) formed on the upper side of the semiconductor film 15, a gate electrode G formed on the upper side of the gate insulating film 16, and an upper side of the gate electrode G. Formed on the inorganic insulating film 18, the capacitive electrode C formed on the upper side of the inorganic insulating film 18, the inorganic insulating film 20 formed on the upper side of the capacitive electrode C, and the upper side of the inorganic insulating film 20. A source electrode S, a drain electrode D, and a terminal electrode TM, and an organic interlayer film 21 formed above the source electrode S and the drain electrode D.
  • the semiconductor film 15, the inorganic insulating film 16, the gate electrode G, the inorganic insulating films 18 and 20, the source electrode S, and the drain electrode D constitute a thin layer transistor (TFT).
  • TFT thin layer transistor
  • the plurality of terminal electrodes TM formed at the end (non-display area NA) of the TFT layer 4 are used for connection to an electronic circuit board such as an IC chip or FPC.
  • the end surface of the terminal electrode TM is covered with the organic interlayer film 21.
  • the semiconductor film 15 is made of, for example, low temperature polysilicon (LPTS) or an oxide semiconductor.
  • the gate insulating film 16 can be constituted by, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a stacked film thereof formed by a CVD method.
  • the gate electrode G, the source electrode S, the drain electrode D, and the terminal are, for example, aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), copper ( It is comprised by the metal single layer film or laminated film containing at least 1 of Cu).
  • the TFT having the semiconductor film 15 as a channel is shown as a top gate structure, but a bottom gate structure may be used (for example, when the TFT channel is an oxide semiconductor).
  • the inorganic insulating films 16, 18, and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a stacked film thereof formed by a CVD method.
  • SiOx silicon oxide
  • SiNx silicon nitride
  • the organic interlayer film 21 can be made of a photosensitive organic material that can be applied, such as polyimide or acrylic.
  • the organic interlayer film 21 functions as a base (planarization film) for the light emitting element layer 5.
  • the organic interlayer film 21 and the lower portion 21y of the convex structure TK in the non-display area are formed in the same process.
  • the anode electrode 22 is composed of, for example, a laminate of ITO (Indium Tin Oxide) and an alloy containing Ag or Al, and has light reflectivity.
  • ITO Indium Tin Oxide
  • the light emitting element layer 5 (for example, OLED layer) includes an anode electrode 22 formed above the organic interlayer film 21, a bank 23 defining subpixels in the display area DA, and an EL formed above the anode electrode 22.
  • An (electroluminescence) layer 24 and a cathode electrode 25 formed on the upper side of the EL layer 24 are included.
  • the bank 23 in the display area and the upper portion 23y of the convex structure TK in the non-display area can be formed using a photosensitive organic material such as polyimide, epoxy, acrylic, or the like, for example, in the same process.
  • the convex structure TK is formed in an upper layer than the inorganic insulating film 20 and defines the edge of the organic sealing film 27.
  • the EL layer 24 is formed in a region (subpixel region) defined by the bank 23 by a vapor deposition method or an ink jet method.
  • the light emitting element layer 5 is an OLED (organic light emitting diode) layer
  • the EL layer 24 includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in order from the lower layer side. It is composed by doing.
  • the cathode electrode 25 can be made of a transparent metal such as ITO (Indium Tin Oxide), IZO (Indium Zincum Oxide), or MgAg alloy.
  • the light emitting element layer 5 is an OLED layer
  • holes and electrons are recombined in the EL layer 24 by the driving current between the anode electrode 22 and the cathode electrode 25, and the exciton generated thereby falls to the ground state. Light is emitted.
  • the light emitting element layer 5 is not limited to the OLED layer, but may be an inorganic light emitting diode layer or a quantum dot light emitting diode layer.
  • the sealing layer 6 includes a first inorganic sealing film 26 that covers the partition wall 23 c and the cathode electrode 25, an organic sealing film 27 that covers the first inorganic sealing film 26, and a second inorganic sealing film that covers the organic sealing film 27. And a stop film 28.
  • the first inorganic sealing film 26 and the second inorganic sealing film 28 are each formed of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a stacked film thereof formed by CVD using a mask. Can be configured.
  • the organic sealing film 27 is a light-transmitting organic insulating film that is thicker than the first inorganic sealing film 26 and the second inorganic sealing film 28, and is made of a photosensitive organic material that can be applied, such as polyimide or acrylic. can do. For example, an ink containing such an organic material is applied onto the first inorganic sealing film 26 by inkjet and then cured by UV irradiation.
  • the sealing layer 6 covers the light emitting element layer 5 and prevents penetration of foreign matters such as water and oxygen into the light emitting element layer 5.
  • the sealing layer 6 can also be comprised only with an inorganic film
  • the upper surface film 9 is affixed on the sealing layer 6 through the adhesive 8 and functions as a support material when the support 50 is peeled off.
  • the material for the top film 9 include PET (polyethylene terephthalate).
  • the lower film 10 is for manufacturing a display device having excellent flexibility by being attached to the lower surface of the resin layer 12 after the support 50 is peeled off.
  • Examples of the material include PET.
  • the functional film 39 has, for example, an optical compensation function, a touch sensor function, a protection function, and the like.
  • the electronic circuit board 60 disposed on the back surface of the terminal portion 44 is, for example, an IC chip or a flexible printed board.
  • the lower layer portion 7 including the resin layer 12, the barrier layer 3, and the TFT layer 4 is provided with a terminal portion 44 located on the inorganic insulating film 20 of the TFT layer 4, and an inorganic insulation from the terminal portion 44.
  • a conduction hole DH that penetrates the film 20, the inorganic insulating film 18, the inorganic insulating film 16, the barrier layer 3, and the resin layer 12 and reaches the back surface 49 (the lower surface of the resin layer 12) of the terminal portion 44 is formed.
  • the terminal portion 44 includes a plurality of terminal electrodes TM, and the terminal electrodes TM are formed on the inner wall of the conduction hole DH (inner walls of the inorganic insulating films 16, 18, 20, the barrier layer 3 and the resin layer 12 through holes).
  • the conduction part DC is included.
  • a conductor 55 is disposed inside the conduction hole DH, and the conductor 55 is disposed on the back surface 49 of the terminal portion 44 (the lower end portion of the resin layer 12) and the conduction portion DC of the terminal electrode TM.
  • the terminal electrode TM and the electronic circuit board 60 are electrically connected by contacting each of them.
  • the inorganic insulating films 16, 18, 20 and the resin layer 12 can be formed by dry etching using, for example, photolithography. Holes can be formed in the resin layer 12 by laser irradiation.
  • FIG. 4 is a flowchart showing a film forming process and a mounting process in the first embodiment.
  • FIG. 5 is a plan view showing a film forming process and a mounting process in the first embodiment.
  • FIG. 6 is a cross-sectional view showing a film forming process and a mounting process in the first embodiment.
  • a conduction hole DH is formed at the terminal portion formation position (step S4a).
  • the conduction hole DH is provided for each position where the terminal electrode is formed.
  • the conduction hole DH has a forward tapered shape (thinning toward the bottom) and penetrates the inorganic insulating film 20, the inorganic insulating film 18, the inorganic insulating film 16, the barrier layer 3, and the resin layer 12.
  • the taper angle of the conduction hole DH is desirably 30 ° to 80 °.
  • a terminal electrode TM that passes through the inner wall of the conduction hole DH is formed in the terminal portion 44 (step S4b). That is, the terminal electrode TM includes a conduction part DC formed on the inner wall of the conduction hole DH.
  • the support 50 is peeled off (from the resin layer 12) (step S8).
  • the support 50 is peeled off (from the resin layer 12) (step S8).
  • the portion located on the bottom surface of the conduction hole of the terminal electrode TM is removed.
  • step S9 the lower surface film 10 is attached (step S9).
  • separation is performed by dividing (step S10).
  • the lower film 10 corresponding to the back side of the terminal portion 44 is cut.
  • the lower surface film corresponding to the back side of the terminal portion is peeled off (step S12a).
  • the display device 2 is placed on the stage ST1 having an opening (provided at a position corresponding to the terminal portion), and the electronic circuit board 60 is placed on the stage ST2.
  • the conductor 55 conductive binder
  • the stage ST2 is disposed on the back side of the terminal portion 44 so that the conductor 55 and the bottom surface of the conduction hole face each other (step S12b).
  • the crimping head AH is arranged on the conductive hole upper surface (opening surface) side, the stage ST2 is raised, and the electric conductor 55 is formed by the electronic circuit board 60 and the crimping head AH. Is applied to fill the conductive hole DH in the conduction hole DH (step S12c).
  • the conductor 55 filled in the conduction hole DH is cured by heat from the pressure bonding head AH (step S12d).
  • the electronic circuit board 60 is made of resin in a state in which the conductor 55 that is a conductive binder is in contact with the conduction portion DC and the electronic circuit board 60. Bonded to the lower surface of layer 12. That is, the terminal electrode TM and the electronic circuit board 60 are electrically connected, and the electronic circuit board 60 is mounted on the back surface of the terminal portion 44.
  • FIG. 7 is a cross-sectional view showing a modification of the display device of the first embodiment.
  • FIG. 7 shows a terminal part configuration in the case where the conduction part DC is formed by the same process as the terminal electrode TM (formed in the same source layer and made of the same material).
  • the conduction hole DH is surrounded by the edge Te of the terminal electrode TM.
  • one end is connected to the terminal electrode TM, and a terminal wiring TW made of the same material as the terminal electrode TM is provided.
  • the wiring width w1 of the terminal wiring TW is the wiring width w1. Is smaller than the size w2 of the conduction hole DH in the same direction.
  • the terminal electrode TM is connected to the source layer (for example, the source electrode) of the TFT layer 4, but the present invention is not limited to this.
  • the terminal electrode TM can also be connected to the gate layer (same layer as the gate electrode) of the TFT layer 4.
  • the openings of the barrier layer 3 and the resin layer 12 are made smaller than the openings of the inorganic insulating films 16, 18, and 20.
  • Conductive portions DC are formed on the inner walls of the through holes of the inorganic insulating films 16, 18, and 20 and the barrier layer 3.
  • the electronic circuit board 60 is disposed under the bottom surface of the conduction hole DH, and the conductor 55 (conductive binder) applied to the holding plate PZ is disposed on the opening of the conduction hole DH. Then, the pressure bonding head AH may be lowered to apply pressure to the conductor 55 between the pressing plate PZ and the electronic circuit board 60 to fill the conductor 55 in the conduction hole DH.
  • the display device manufacturing apparatus 70 includes a film forming apparatus 76, a cutting apparatus 74, a mounting apparatus 80 including a thermocompression bonding tool and the like, and a controller 72 that controls these apparatuses.
  • the film forming apparatus 76 controlled by the controller 72 performs steps S4a to S4b of FIG. 4, and the mounting apparatus 80 controlled by the controller 72 performs steps S12a to S12d of FIG.
  • the frame portion is compared with a configuration in which an electronic circuit board (FPC or the like) mounted on the terminal portion is bent on the back surface. Can be reduced. Further, since it is not necessary to bend the electronic circuit board, the mounting reliability can be improved.
  • FPC electronic circuit board
  • FIG. 10 is a flowchart showing a film forming process and a mounting process in the second embodiment.
  • FIG. 11 is a plan view showing a film forming process and a mounting process in the second embodiment.
  • FIG. 12 is a cross-sectional view illustrating a mounting process in the second embodiment.
  • a conduction hole DH is formed at the terminal portion formation position (step S4a).
  • the conduction hole DH has a forward tapered shape (thinning toward the bottom) and penetrates the inorganic insulating film 20, the inorganic insulating film 18, the inorganic insulating film 16, the barrier layer 3, and the resin layer 12.
  • the terminal electrode TM (source layer) is formed on the terminal portion 44 (step S4b).
  • step S8 the support 50 is peeled (from the resin layer 12) (step S8), and the lower surface film is attached (step S9).
  • separation is performed by dividing (step S10).
  • the lower film corresponding to the back side of the terminal portion 44 is cut.
  • the lower surface film corresponding to the back side of the terminal portion is peeled off (step S12a).
  • the electronic circuit board 60 is adhered to the back side of the terminal portion 44 with an adhesive 59 (step S12b).
  • the conductor 56 is applied in the terminal electrode TM and the conduction hole DH by the ink jet method (step S12e).
  • the conductor 56 is made of, for example, an ink-jetable conductive material including silver nanoparticles, and contacts the terminal electrode TM and the electronic circuit board 60.
  • terminal electrode TM and the electronic circuit board 60 are electrically connected via the conductor 56, and the electronic circuit board 60 is mounted on the back surface of the terminal portion 44.
  • the terminal electrode TM is configured to include the conduction part DC formed on the inner wall of the conduction hole DH, and the inside of the conduction hole DH.
  • the conductor 56 may be brought into contact with the terminal electrode TM and the electronic circuit board 60 by driving the conductor 56 into the ink jet system.
  • the conduction hole DH is provided for each terminal electrode TM.
  • one (common) conduction hole DH is provided for a plurality of terminal electrodes.
  • one (common) conduction hole DH may be provided for all terminal electrodes.
  • the conduction hole DH corresponding to the plurality of terminal electrodes TM includes a resin hole 12k formed for each terminal electrode TM, and the terminal electrode TM is a resin hole.
  • An anisotropic conductive film 58 (including a thermosetting resin 58j and conductive particles 58c) disposed in the conduction hole DH includes a conduction part DC formed on the 12k side wall, and a conduction part DC of the terminal electrode TM.
  • a configuration in contact with the electronic circuit board 60 disposed below the resin layer 12 is also possible. As shown in FIG.
  • the terminal portion 44 and the electronic circuit board 60 are provided on the back surface corresponding to one side (one edge) of the rectangular display device in a plan view having four sides, but this is not limitative.
  • the electronic circuit board 60 can be provided on the terminal portion 44 and the back surface thereof corresponding to each of the four sides (FA, FB, FC, FD). In this way, the area of the routing wiring is reduced, and the frame portion can be reduced.
  • the terminal portion 44 corresponding to two opposite sides and the electronic circuit board 60 on the back surface thereof are connected as shown in FIG. 3 (that is, the terminal electrode TM is electrically connected to the source layer of the TFT layer 4).
  • the terminal portion 44 corresponding to the remaining two sides (two sides facing each other) and the electronic circuit board 60 on the back surface thereof are connected as shown in FIG. 15 (that is, the terminal electrode TM is electrically connected to the gate layer of the TFT layer 4).
  • the edge of the display device 2 in plan view is not limited to a rectangle, and may be a polygon, a circle, an ellipse, or the like (for example, the entire edge of the display device may be an ellipse or a circle, or a part of the edge may be an ellipse). Shape or circular shape). As shown in FIG. 16, a part of the edge of the display device 2 may be a curved portion Fa having a curvature, and a terminal portion 44 may be formed along the curved portion Fa. In this case, a part of the edge of the electronic circuit board 60 provided on the back surface of the terminal portion 44 may have a curvature.
  • the electro-optic element provided in the display device according to the present embodiment is not particularly limited.
  • a display device for example, an organic EL (Electro Luminescence) display including an OLED (Organic Light Emitting Diode) as an electro-optical element, an inorganic EL display including an inorganic light-emitting diode as an electro-optical element, Examples of the electro-optical element include a QLED display provided with a QLED (Quantum dot Light Emitting Diode).
  • Aspect 1 A lower layer, and a light emitting element layer formed in an upper layer than the lower layer, A display device in which the lower layer portion includes a terminal portion including a terminal electrode, and a conduction hole extending from the terminal portion to the lower surface of the lower layer portion, which is the back surface thereof.
  • Aspect 2 A conductor at least a part of which is located in the conduction hole is provided, and the conductor is in contact with the terminal electrode and an electronic circuit board disposed below the lower layer portion. The indicated display device.
  • Aspect 3 The display device according to Aspect 2, for example, wherein the terminal electrode includes a conduction portion formed on an inner wall of the conduction hole, and the conductor is in contact with the conduction portion and the electronic circuit board.
  • Aspect 4 The conduction hole and the terminal electrode are formed of the same material, The display device according to any one of aspects 1 to 3, for example, wherein the conduction hole is surrounded by an edge of the terminal electrode in a plan view.
  • Aspect 5 The lower layer part is provided with a terminal wiring having one end connected to the terminal electrode and formed of the same material as the terminal electrode, and the wiring width of the terminal wiring is the size of the conduction hole in the same direction as the wiring width.
  • the display device according to aspect 4 for example, smaller than the display device.
  • Aspect 6 The display device according to any one of Embodiments 1 to 5, for example, wherein the conduction hole has a forward tapered shape.
  • Aspect 7 The display device according to Aspect 2, for example, wherein the conductor is a conductive binder.
  • Aspect 8 The display device according to Aspect 2, for example, wherein the conductor includes a conductive material that can be applied by an inkjet method.
  • Aspect 9 The lower layer portion includes a TFT layer provided with the terminal portion, a barrier layer formed under the TFT layer, and a resin layer formed under the barrier layer. The display device according to claim 1.
  • Aspect 10 The display device according to Aspect 9, for example, wherein the conduction hole extends from the terminal portion to the lower surface of the lower layer portion through the barrier layer and the resin layer.
  • Aspect 11 Including a bottom film bonded to the resin layer; The display device according to, for example, the aspect 9 or 10, wherein the lower surface film is removed from the back surface of the terminal portion.
  • Aspect 12 The display device according to any one of aspects 9 to 11, for example, wherein the terminal electrode is formed in the same layer as a conduction electrode of a transistor in the TFT layer.
  • Aspect 13 Having a polygonal shape with three or more sides, The display device according to, for example, aspect 2, including the terminal portion and the electronic circuit board disposed on the back surface side corresponding to each of a plurality of sides.
  • Aspect 14 The display device according to any one of aspects 1 to 13, for example, wherein at least a part of an edge of the display device is a curved portion having a curvature, and the terminal portion is formed along the curved portion.
  • Aspect 15 A manufacturing method of a display device comprising a lower layer part and a light emitting element layer formed in an upper layer than the lower layer part, The manufacturing method of the display device which forms the terminal part containing a terminal electrode in the said lower layer part, and the conduction
  • Aspect 16 The display according to Aspect 15, for example, in which a conductor at least partially located in the conduction hole is provided, and the conductor is brought into contact with the terminal electrode and an electronic circuit board disposed below the lower layer portion.
  • Aspect 17 The manufacturing method of the display device of the aspect 14, for example which makes the said conduction
  • Aspect 18 The method for manufacturing a display device according to any one of embodiments 15 to 17, for example, wherein the conductor is a conductive binder.
  • Aspect 19 The method for manufacturing a display device according to aspect 18, for example, in which the conductor is filled in the conduction hole by pressure.
  • Aspect 20 The method for producing a display device according to any one of embodiments 15 to 17, for example, in which the conductor is applied by an inkjet method.
  • Aspect 21 21. The display device manufacturing method according to any one of embodiments 15 to 20, wherein a resin layer, a barrier layer, and a TFT layer including the terminal portion are formed on the upper side of the support.
  • Aspect 22 The manufacturing method of the display device of the aspect 21, for example, which peels the said support body from the said resin layer, and affixes a lower surface film on the said resin layer.
  • Aspect 23 The method for manufacturing a display device according to, for example, aspect 22, wherein a portion corresponding to the back surface of the terminal portion of the bottom film is removed.
  • a display device manufacturing apparatus comprising a lower layer part and a light emitting element layer formed in an upper layer than the lower layer part, An apparatus for manufacturing a display device, wherein a terminal portion including a terminal electrode and a conduction hole extending from the terminal portion to the lower surface of the lower layer portion, which is the back surface, are formed in the lower layer portion.
  • the present invention is not limited to the above-described embodiments, and embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in the technical scope of the present invention. Furthermore, a new technical feature can be formed by combining the technical means disclosed in each embodiment.

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un dispositif d'affichage comportant : une couche d'élément électroluminescent (5) ; une partie borne (44), comprenant une pluralité d'électrodes de borne (TM) ; un trou conducteur (DH), s'étendant de la partie borne (44) à une surface arrière de ladite partie borne ; un matériau conducteur (55), disposé à l'intérieur du trou conducteur (DH) ; et un substrat de circuit électronique (60), disposé sur la surface arrière de la partie borne, les électrodes de borne (TM) comprenant des parties conductrices (DC), formées sur une paroi interne du trou conducteur et le matériau conducteur (55) étant en contact avec les parties conductrices (DC) et avec le substrat de circuit électronique (60).
PCT/JP2017/013355 2017-03-30 2017-03-30 Dispositif d'affichage, procédé de fabrication de dispositif d'affichage et appareil de fabrication de dispositif d'affichage WO2018179265A1 (fr)

Priority Applications (1)

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PCT/JP2017/013355 WO2018179265A1 (fr) 2017-03-30 2017-03-30 Dispositif d'affichage, procédé de fabrication de dispositif d'affichage et appareil de fabrication de dispositif d'affichage

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111415587A (zh) * 2020-03-31 2020-07-14 京东方科技集团股份有限公司 一种显示基板及其制备方法和显示面板

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001298043A (ja) * 2000-02-08 2001-10-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2003157029A (ja) * 2001-09-06 2003-05-30 Sharp Corp 表示装置及びその製造方法
JP2004077856A (ja) * 2002-08-20 2004-03-11 Sharp Corp アクティブマトリクス基板及びその製造方法、並びに、それを備えた液晶表示装置
JP2004349152A (ja) * 2003-05-23 2004-12-09 Seiko Epson Corp 有機ｅｌ表示装置、電子機器及びその製造方法
JP2006040581A (ja) * 2004-07-22 2006-02-09 Ams:Kk 有機ｅｌ素子の基板
JP2010008677A (ja) * 2008-06-26 2010-01-14 Sharp Corp 画像表示装置
JP2010165673A (ja) * 2008-12-17 2010-07-29 Semiconductor Energy Lab Co Ltd 発光装置及び電子機器
JP2011099948A (ja) * 2009-11-05 2011-05-19 Panasonic Corp 電子ペーパ及び電子ペーパ書き込み装置
JP2015125295A (ja) * 2013-12-26 2015-07-06 株式会社ジャパンディスプレイ 表示装置
JP2016018758A (ja) * 2014-07-11 2016-02-01 株式会社ジャパンディスプレイ 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
WO2016158629A1 (fr) * 2015-03-31 2016-10-06 シャープ株式会社 Carte de circuits imprimés souple et dispositif d'affichage
WO2017002372A1 (fr) * 2015-07-01 2017-01-05 シャープ株式会社 Procédé de fabrication de dispositif d'affichage

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001298043A (ja) * 2000-02-08 2001-10-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2003157029A (ja) * 2001-09-06 2003-05-30 Sharp Corp 表示装置及びその製造方法
JP2004077856A (ja) * 2002-08-20 2004-03-11 Sharp Corp アクティブマトリクス基板及びその製造方法、並びに、それを備えた液晶表示装置
JP2004349152A (ja) * 2003-05-23 2004-12-09 Seiko Epson Corp 有機ｅｌ表示装置、電子機器及びその製造方法
JP2006040581A (ja) * 2004-07-22 2006-02-09 Ams:Kk 有機ｅｌ素子の基板
JP2010008677A (ja) * 2008-06-26 2010-01-14 Sharp Corp 画像表示装置
JP2010165673A (ja) * 2008-12-17 2010-07-29 Semiconductor Energy Lab Co Ltd 発光装置及び電子機器
JP2011099948A (ja) * 2009-11-05 2011-05-19 Panasonic Corp 電子ペーパ及び電子ペーパ書き込み装置
JP2015125295A (ja) * 2013-12-26 2015-07-06 株式会社ジャパンディスプレイ 表示装置
JP2016018758A (ja) * 2014-07-11 2016-02-01 株式会社ジャパンディスプレイ 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
WO2016158629A1 (fr) * 2015-03-31 2016-10-06 シャープ株式会社 Carte de circuits imprimés souple et dispositif d'affichage
WO2017002372A1 (fr) * 2015-07-01 2017-01-05 シャープ株式会社 Procédé de fabrication de dispositif d'affichage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111415587A (zh) * 2020-03-31 2020-07-14 京东方科技集团股份有限公司 一种显示基板及其制备方法和显示面板

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