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WO2018180177A1 - Dispositif de refroidissement par rayonnement et procédé de refroidissement par rayonnement - Google Patents

Dispositif de refroidissement par rayonnement et procédé de refroidissement par rayonnement Download PDF

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Publication number
WO2018180177A1
WO2018180177A1 PCT/JP2018/007819 JP2018007819W WO2018180177A1 WO 2018180177 A1 WO2018180177 A1 WO 2018180177A1 JP 2018007819 W JP2018007819 W JP 2018007819W WO 2018180177 A1 WO2018180177 A1 WO 2018180177A1
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Prior art keywords
layer
radiation
light
ultraviolet
reflection layer
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Application number
PCT/JP2018/007819
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English (en)
Japanese (ja)
Inventor
末光真大
齋藤禎
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大阪瓦斯株式会社
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Filing date
Publication date
Priority claimed from JP2017218235A external-priority patent/JP6861614B2/ja
Application filed by 大阪瓦斯株式会社 filed Critical 大阪瓦斯株式会社
Priority to CN201880021513.7A priority Critical patent/CN110462464B/zh
Priority to US16/494,389 priority patent/US11598592B2/en
Publication of WO2018180177A1 publication Critical patent/WO2018180177A1/fr

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F13/18—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/26—Reflecting filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters

Definitions

  • the present invention comprises an ultraviolet reflection layer that reflects ultraviolet light, a light reflection layer that reflects visible light and infrared light, and an infrared emission layer that emits infrared light, and emits infrared light from the emission surface And a radiation cooling method.
  • Radiation cooling refers to a phenomenon in which a substance reduces its temperature by emitting an electromagnetic wave such as infrared light to the surroundings. If this phenomenon is used, for example, it can be used as a cooling device that cools an object without consuming energy such as electricity.
  • Patent Document 1 an ultraviolet reflection layer of silicon dioxide or hafnium oxide is formed on a solar light reflection layer (light reflection layer) made of silver, and a thickness of silicon dioxide or hafnium oxide is formed on the ultraviolet reflection layer.
  • a radiation cooling device is disclosed which has formed an infrared radiation layer of several ⁇ m.
  • the ultraviolet light contained in the received sunlight is reflected by the ultraviolet reflection layer, and the other light is mainly reflected by the sunlight reflection layer (light reflection layer), It is supposed to escape from that lineage. Also, part of the infrared light contained in the received sunlight and the heat input from the atmosphere, the object to be cooled, etc. are converted to infrared light of a predetermined wavelength range by the infrared radiation layer, and escape to the outside of the system It is supposed to be.
  • the present invention has been made in view of such circumstances, and an object thereof is to provide a radiation cooling apparatus and a radiation cooling method in which absorption of ultraviolet light is suppressed.
  • the characteristic configuration of the radiation cooling device according to the present invention for achieving the above object is A radiation cooling apparatus including an ultraviolet reflection layer that reflects ultraviolet light, a light reflection layer that reflects visible light and infrared light, and an infrared radiation layer that emits infrared light, and emitting infrared light from the radiation surface
  • an ultraviolet reflection layer that reflects ultraviolet light
  • a light reflection layer that reflects visible light and infrared light
  • an infrared radiation layer that emits infrared light
  • the ultraviolet light contained in the light such as sunlight incident from the radiation surface side of the radiation cooling device is reflected by the ultraviolet reflection layer on the radiation surface side and escapes from the system from the radiation surface . Therefore, it can be avoided that ultraviolet light is incident on the infrared radiation layer or the light reflection layer. Further, since it is not necessary to provide a multilayer structure with a film-like layer directly on the light reflecting layer, it is possible to avoid an increase in absorption of ultraviolet light due to surface plasmon resonance in the light reflecting layer. Therefore, according to the above configuration, absorption of ultraviolet light can be suppressed.
  • the term “light” when the term “light” is simply used, the concept of the light includes infrared light, visible light, and ultraviolet light. When these are described in terms of the wavelength of light as an electromagnetic wave, the wavelength includes an electromagnetic wave of 10 nm to 20000 nm.
  • the heat input to the radiation cooling device is converted to infrared radiation in the infrared radiation layer, and is released from the radiation surface to the outside of the system.
  • the light irradiated to the radiation cooling device is reflected, and the heat transfer to the radiation cooling device (for example, the heat transfer from the atmosphere or the cooling object cooled by the radiation cooling device) Heat transfer) can be emitted out of the system as infrared light. That is, it is possible to provide a radiation cooling device in which absorption of ultraviolet light is suppressed.
  • the ultraviolet reflection layer is formed by laminating two or more dielectrics,
  • the dielectric is selected from any of silicon dioxide, aluminum oxide, silicon nitride, zirconium dioxide, titanium dioxide, magnesium oxide, hafnium oxide, aluminum nitride, zinc oxide and niobium pentoxide.
  • dielectric A substance in which dielectric is superior to conductivity is called dielectric.
  • Multilayers of dielectrics of different refractive indices can be used to reflect light of any wavelength.
  • silicon dioxide, aluminum oxide (sapphire), silicon nitride, zirconium dioxide, titanium dioxide, magnesium oxide, hafnium oxide, aluminum nitride, zinc oxide and niobium pentoxide are preferably used.
  • it is preferable to stack two or more types of dielectrics having different refractive indexes because the reflectance of ultraviolet light in the ultraviolet reflective layer is improved. This is because the reflectance of the entire ultraviolet reflection layer is improved by utilizing the interference of the reflected light from the boundaries of the respective dielectrics forming the ultraviolet reflection layer. Therefore, according to the said structure, the radiation cooling device which suppressed absorption of the ultraviolet light can be provided.
  • the layer thickness of the dielectric is less than 200 nm.
  • ultraviolet light can be efficiently reflected by the ultraviolet reflection layer.
  • the wavelength of ultraviolet light is less than about 400 nm, it is because ultraviolet light can be efficiently reflected if it is a half wavelength of the wavelength, that is, less than 200 nm.
  • Ultraviolet light is generally defined as 10 to 400 nm in many cases, and the solar light spectrum contains almost no light at wavelengths shorter than 300 nm. That is, when using a dielectric having a refractive index of about 1 in the wavelength range, about 75 to 100 nm or 150 to 200 nm, and using a dielectric having a refractive index of about 3 in the wavelength range, about 25 to 33 nm or 50 to 50 It will be 66 nm.
  • silicon dioxide, aluminum oxide (sapphire), silicon nitride, zirconium dioxide, titanium dioxide, magnesium oxide, hafnium oxide, aluminum nitride, zinc oxide, and niobium pentoxide have a thickness of several hundred nm and almost have a UV absorption coefficient.
  • the dielectric of the ultraviolet reflection layer to be the radiation surface is selected from any of silicon dioxide, aluminum oxide, silicon nitride, zirconium dioxide, titanium dioxide and niobium pentoxide.
  • Silicon dioxide, aluminum oxide, silicon nitride, zirconium dioxide, titanium dioxide, and niobium pentoxide are less susceptible to hydrolysis by moisture in the environment, and are resistant to oxidation by oxygen in the air and have high weatherability.
  • silicon dioxide, aluminum oxide, zirconium dioxide, titanium dioxide and niobium pentoxide have low oxygen mobility among oxides, and are stable as a material (substance) with little change over time (temporarily) It is for.
  • the infrared radiation layer consists in silicon dioxide.
  • Preferred materials which transmit light and produce infrared radiation of 8000 nm to 20000 nm include silicon dioxide, aluminum oxide, magnesium oxide and hafnium dioxide.
  • silicon dioxide has a large absorption peak near a wavelength of 10000 nm, and efficiently emits infrared radiation of a wavelength of 10000 nm, which is between 8000 nm and 20000 nm.
  • silicon dioxide is preferably used as a material (substance) used for the infrared radiation layer. That is, according to the above configuration, it is possible to avoid receiving heat and generating heat, and efficiently radiate the heat of the radiation cooling device as infrared rays to improve the cooling performance.
  • the thickness of the infrared radiation layer is more than 1 ⁇ m.
  • the thickness of the light reflection layer may be a thickness exceeding 1 ⁇ m, and is formed to 10000 ⁇ m or less in consideration of the economical aspect. In general, when the thickness is 20 ⁇ m to 10000 ⁇ m, the balance between the economic aspect and the technical aspect in terms of production and fabrication is good.
  • the light reflecting layer is made of silver or aluminum.
  • the thickness of the light reflecting layer is greater than 80 nm.
  • the thickness of the light reflection layer may be a thickness exceeding 80 nm, and is formed to 1000 nm or less in consideration of the economical aspect. Usually, when it is formed to a thickness of around 200 nm, it is well balanced in terms of economy, weatherability and durability.
  • the characteristic configuration of the radiation cooling method according to the present invention for achieving the above object is An ultraviolet reflection layer that reflects ultraviolet light, a light reflection layer that reflects visible light and infrared light, an infrared radiation layer that emits infrared light, the ultraviolet reflection layer, the infrared radiation layer, and The point is that the infrared light is emitted from the radiation surface opposite to the surface in contact with the infrared radiation layer of the ultraviolet reflection layer using a radiation cooling device formed by laminating the light reflection layer in order.
  • a further characterizing feature of the radiation cooling method according to the present invention is The radiation surface is directed to the sky, and the radiation surface is directed to radiate from the radiation surface directed to the sky.
  • the radiation cooling device 100 shown in FIG. 1 is a cooling device for obtaining a cooling effect.
  • the radiation cooling device 100 cools an object to be cooled (not shown).
  • the radiation cooling device 100 reflects the light L (for example, sunlight) incident on the radiation cooling device 100, and the heat input to the radiation cooling device 100 (for example, due to heat conduction from an atmosphere of the atmosphere or a cooling object).
  • a cooling effect is realized by converting the heat input into infrared light and emitting it.
  • light refers to an electromagnetic wave having a wavelength of 10 nm to 20000 nm. That is, the light L includes ultraviolet light UV, infrared light IR and visible light VL.
  • the radiation cooling device 100 includes an ultraviolet reflection layer 10 that reflects ultraviolet light UV, a light reflection layer 20 that reflects visible light and infrared light, and infrared light IR. Emitting infrared radiation IR from the radiation surface 40; And the radiation cooling device 100 is laminated
  • the radiation surface 40 is the surface of the ultraviolet reflection layer 10 opposite to the surface in contact with the infrared radiation layer 30.
  • the radiation cooling method includes the ultraviolet reflection layer 10 that reflects ultraviolet light UV, the light reflection layer 20 that reflects visible light and infrared light, and an infrared radiation layer that emits infrared light IR.
  • 30 is stacked in the order of the ultraviolet reflection layer 10, the infrared radiation layer 30, and the light reflection layer 20, and the radiation surface on the opposite side to the surface of the ultraviolet reflection layer 10 in contact with the infrared radiation layer 30 Emit from 40
  • the ultraviolet reflection layer 10 is a layer made of a dielectric, which has an optical structure that reflects ultraviolet light UV and transmits visible light VL and infrared light IR.
  • the ultraviolet reflection layer 10 is formed by laminating two or more types of dielectrics, as shown in FIG.
  • the ultraviolet reflective layer 10 shown in FIG. 2 has a dielectric layer 11 and a dielectric layer 15 stacked on top of each other as a layer made of a dielectric. One surface of the ultraviolet reflection layer 10 is in close contact with the infrared radiation layer 30.
  • the ultraviolet light UV means an electromagnetic wave having a wavelength of 10 nm to 400 nm.
  • the infrared light IR refers to an electromagnetic wave having a wavelength of about 700 nm to 20000 nm.
  • the visible light VL refers to an electromagnetic wave having a wavelength of approximately 400 nm to 700 nm.
  • the dielectric layers of the ultraviolet reflective layer 10 are each in the form of a film of less than 200 nm.
  • This film-like layer can be formed, for example, by the so-called CVD method or sputtering method, and there is no limitation on its formation method.
  • the surface on the opposite side to the surface in contact with the infrared radiation layer 30 of the ultraviolet reflective layer 10, that is, the surface on the side open to the atmosphere is a radiation surface 40 that emits infrared light IR in the radiation cooling device 100.
  • the surface of the dielectric layer on the opposite side (the other end side) to the surface of the ultraviolet reflection layer 10 in contact with the infrared radiation layer 30 is the radiation surface of the layer that is open to the atmosphere. It is.
  • the surface of the dielectric layer on the side of the ultraviolet reflection layer 10 that is open to the atmosphere is the radiation surface 40 of the radiation cooling device 100.
  • the dielectric layer 11 to be the radiation surface 40 is made of a material (material) selected from any of silicon dioxide, aluminum oxide, silicon nitride and zirconium dioxide.
  • FIG. 2 shows the case where the dielectric layer 11 is formed of sapphire as aluminum oxide.
  • the dielectric layer 11 to the dielectric layer 15 in FIG. 2 are illustrated in the case of sapphire, silicon dioxide, sapphire, silicon dioxide and sapphire in this order. Further, in FIG. 2, as a specific example in which the thickness (layer thickness) of the dielectric is less than 200 nm, the thicknesses of the dielectric layer 11 to the dielectric layer 15 are 30 nm, 50 nm, 50 nm, 40 nm, and 40 nm in this order.
  • the case is illustrated. 7 and 8 show the reflectance, the transmittance, and the absorptivity of the ultraviolet reflection layer 10 shown in FIG.
  • the ultraviolet reflection layer 10 has a high absorptivity in a wavelength range around 10000 nm corresponding to the window of the atmosphere, and emits infrared light in a wavelength range around 10000 nm.
  • the infrared radiation layer 30 is a layer that transmits the light L and emits infrared light IR.
  • One surface of the infrared radiation layer 30 is in close contact with the ultraviolet reflection layer 10, and the other surface is in close contact with the light reflection layer 20.
  • “transmits light” or the like the case where part of the light is absorbed and reflected and most of the light is transmitted is included. For example, when 90% or more of the energy of incident light is transmitted, it is simply described as "transmits light”.
  • the infrared radiation layer 30 is connected to the ultraviolet reflection layer 10 and the light reflection layer 20 so as to be thermally conductive. That is, the infrared radiation layer 30 converts the heat energy of its own, the heat input from the ultraviolet reflection layer 10 (heat energy), and the heat input from the light reflection layer 20 (thermal energy) into infrared light IR. Convert and radiate.
  • the infrared radiation layer 30 is made of silicon dioxide which transmits the light L and efficiently radiates infrared light IR around a wavelength of 10000 nm in the window region of the atmosphere between wavelengths 8000 nm and 20000 nm. Become.
  • the infrared radiation layer 30 is formed to have a thickness of more than 1 ⁇ m.
  • the thickness of the infrared radiation layer 30 may be more than 1 ⁇ m, and it is economical to set it to about 10000 ⁇ m or less, and in particular, it is a balance of economic and performance if it is in the range of 20 ⁇ m to 10000 ⁇ m. Is good.
  • FIG. 3 shows the radiation spectrum of the infrared radiation layer 30 when the layer thickness (thickness) of the infrared radiation layer 30 made of silicon dioxide is 1 ⁇ m, 20 ⁇ m, and 100 ⁇ m.
  • the vertical axis indicates the light absorptivity AB of the infrared radiation layer 30, and the horizontal axis indicates the wavelength WL.
  • the 1 ⁇ m infrared radiation layer 30 of silicon dioxide is a film-like layer prepared by sputtering, and the 20 ⁇ m and 100 ⁇ m infrared radiation layer 30 of silicon dioxide is a layer formed by melting and solidification.
  • the absorptivity of light at an arbitrary wavelength is equal to the emissivity of light, so the distribution shown by the absorptivity AB of the infrared emitting layer 30 in FIG. Equal to the distribution of the intensity of the emitted light.
  • the light reflection layer 20 is a layer made of a metal that reflects the light L, and is a layer that functions as a so-called mirror.
  • the light reflection layer 20 is formed of either silver or aluminum as a metal. In the present embodiment, the case where the light reflection layer 20 is silver is described.
  • the light reflecting layer 20 is formed to be thicker than 80 nm.
  • the light reflection layer 20 has a film thickness of 80 nm or less, transmission starts to occur in a wavelength range of wavelength 2000 nm or less, and light reflection performance can not be exhibited.
  • the thickness of the light reflecting layer 20 exceeds 80 nm, transmission of light does not occur, and the reflectance of light does not change. That is, there is no technical upper limit regarding the thickness of the light reflection layer 20.
  • the thickness of the light reflecting layer 20 may be 1 mm or less.
  • the case where the light reflection layer 20 is silver with a thickness of 200 nm is shown as a specific example in the case where the light reflection layer 20 has a thickness exceeding 80 nm.
  • the first embodiment, the second embodiment, and the third embodiment described below are respectively one aspect of the radiation cooling device 100 according to the present embodiment, having the structure shown in FIG. 1.
  • the radiation cooling device 100 is laminated in the order of the ultraviolet reflection layer 10, the infrared radiation layer 30, and the light reflection layer 20 as viewed from the side of the radiation surface 40.
  • Comparative Example 1 and Comparative Example 2 described below are each a conventional radiation cooling device 200 having the structure shown in FIG. 4.
  • the radiation cooling device 200 is stacked in the order of the infrared radiation layer 30, the ultraviolet reflection layer 10, and the light reflection layer 20, as viewed from the radiation surface 40 side.
  • the cooling performances at an ambient temperature of 30 ° C. of the radiation cooling devices 100 of Example 1, Example 2 and Example 3 and the conventional radiation cooling device 200 of Comparative Example 1 and Comparative Example 2 are compared.
  • the radiation surface 40 of the radiation cooling device 100 or the radiation cooling device 200 is directed to the sky (empty, space) The plane 40 is placed vertically upward.
  • sunlight is used as light in an environment where it is incident at an energy of approximately 1000 W / m 2 from the vertical direction of the material. . Sunlight is incident on the radiation cooling device 100 or the radiation cooling device 200 mainly from the radiation surface 40.
  • Table 1 shows the cooling performance in the case of Example 1.
  • Table 2 shows the cooling performance in the case of Example 2.
  • Table 3 shows the cooling performance in the case of Example 3.
  • Table 4 shows the cooling performance in the case of Comparative Example 1.
  • Table 5 shows the cooling performance in the case of Comparative Example 2. The items shown in Tables 1 to 5 are the same.
  • the configuration common to the radiation cooling devices 100 of the first embodiment, the second embodiment and the third embodiment and the conventional radiation cooling devices 200 of the first comparison example and the second comparison example will be described.
  • the light reflecting layer 20 is compared in the following configuration.
  • the light reflecting layers 20 of Example 1, Example 2, Example 3, Comparative Example 1 and Comparative Example 2 are all made of a silver layer having a thickness of 200 nm.
  • the description of the light reflection layer 20 is omitted below.
  • the infrared radiation layer 30 is compared in the following configuration.
  • the materials (substances) forming the infrared radiation layer 30 of Example 1, Example 2, Example 3, Comparative Example 1 and Comparative Example 2 are all silicon dioxide.
  • the thickness of the infrared radiation layer 30 is 1 ⁇ m, 10 ⁇ m, 20 ⁇ m, 100 ⁇ m, 1000 ⁇ m, 10000 ⁇ m, 100000 ⁇ m in each of Example 1, Example 2, Example 3, Comparative Example 1 and Comparative Example 2 Compare
  • the infrared radiation layer 30 of silicon dioxide of 1 ⁇ m and 10 ⁇ m is a film-like layer produced by sputtering.
  • the infrared radiation layer 30 of silicon dioxide of 20 ⁇ m, 100 ⁇ m, 1000 ⁇ m, 10000 ⁇ m and 100000 ⁇ m is a layer formed by melting and solidification.
  • the description of the infrared radiation layer 30 is omitted below.
  • different component parts of Example 1, Example 2, Example 3, Comparative Example 1, and Comparative Example 2 will be described.
  • the radiation cooling device 100 has the following configuration.
  • the ultraviolet reflection layer 10 is formed by laminating the dielectric layer 11 to the dielectric layer 15 as a layer made of a dielectric.
  • the dielectric layer 11 to the dielectric layer 15 are respectively made of sapphire, silicon dioxide, sapphire, silicon dioxide and sapphire.
  • the thicknesses of the dielectric layer 11 to the dielectric layer 15 are 30 nm, 50 nm, 50 nm, 40 nm, and 40 nm, respectively.
  • the radiation cooling device 100 of the second embodiment has the following configuration.
  • the second embodiment is different from the first embodiment in the laminated structure of the ultraviolet reflective layer 10.
  • the ultraviolet reflective layer 10 is provided with dielectric layers 51 to 66 as dielectric layers as shown in FIG.
  • the dielectric layer 51 to the dielectric layer 66 are formed by alternately stacking 16 layers of silicon dioxide and titanium dioxide, respectively.
  • the thicknesses of the dielectric layer 51 to the dielectric layer 66 are 100 nm, 33 nm, 65 nm, 13 nm, 80 nm, 37 nm, 23 nm, 46 nm, 106 nm, 106 nm, 172 nm, 172 nm, 104 nm, 175 nm, and 103 nm respectively.
  • the ultraviolet reflective layer 10 includes dielectric layers 71 to 74 as dielectric layers.
  • the dielectric layer 71 to the dielectric layer 74 are formed by alternately stacking four layers of silicon dioxide and niobium pentoxide in order.
  • the thicknesses of the dielectric layer 71 to the dielectric layer 74 are 111 nm, 25 nm, 56 nm, and 29 nm, respectively.
  • the ultraviolet reflection layer 10 has a high absorptivity in a wavelength range around 10000 nm corresponding to the window of the atmosphere, and emits infrared light in a wavelength range around 10000 nm.
  • the radiation cooling device 200 of Comparative Example 1 includes the ultraviolet reflective layer 10 having the same laminated structure as that of Example 1.
  • the radiation cooling device 200 of Comparative Example 1 differs from the case of Example 1 in the position where the ultraviolet reflective layer 10 is disposed.
  • the radiation cooling device 200 of Comparative Example 2 includes the ultraviolet reflective layer 10 having the same laminated structure as that of Example 2.
  • the radiation cooling device 200 of Comparative Example 2 differs from the case of Example 2 in the position where the ultraviolet reflective layer 10 is disposed.
  • P1 to P4 in Tables 1 to 5 show the following characteristics of the radiation cooling device 100 or the radiation cooling device 200.
  • t thickness of infrared radiation layer 30 ( ⁇ m)
  • P1 Density of energy of radiation (W / m 2 )
  • P2 Density of energy input from sunlight (W / m 2 )
  • P3 Energy density of heat input from atmosphere (atmosphere) (W / m 2 )
  • P4 Energy density of cooling capacity (W / m 2 )
  • T Equilibrium temperature (° C.) of radiation cooling device 100 or radiation cooling device 200
  • the above-mentioned "density” means the density of the in and out of the energy with respect to the area of the surface of radiation surface 40.
  • P2 means the energy which was not reflected by radiation cooling device 100 or radiation cooling device 200 among the energy of the sunlight which injected with energy of about 1000 W / m 2 .
  • the value of P4 is a value obtained by subtracting the sum of the values of P2 and P3 from the value of P1. The values of P1 and P3 are calculated assuming that the radiation angle with respect to the radiation surface 40 is 60 degrees.
  • the radiation cooling devices 100 of Example 1, Example 2 and Example 3 have a higher cooling capacity than the radiation cooling devices 200 of Comparative Example 1 and Comparative Example 2. . Therefore, rather than laminating the infrared radiation layer 30, the ultraviolet reflection layer 10, and the light reflection layer 20 in order from the side of the radiation surface 40 as in the radiation cooling device 200, as in the radiation cooling device 100, It can be judged that the cooling ability is higher when the ultraviolet reflective layer 10, the infrared radiation layer 30, and the light reflective layer 20 are laminated in order as viewed from the radiation surface 40 side. That is, the difference in cooling capacity between the radiation cooling device 100 according to the present embodiment and the conventional radiation cooling device 200 is that absorption of ultraviolet light is suppressed in the case of the radiation cooling device 100 according to the present embodiment. It is believed that there is.
  • the thickness of the infrared radiation layer 30 exhibits good cooling performance even when reaching 100,000 ⁇ m, and the thickness of the infrared radiation layer 30 exhibits good cooling performance even when it exceeds 100,000 ⁇ m. .
  • the thickness of the infrared radiation layer 30 is sufficient if 100,000 ⁇ m.
  • the layer which consists of a dielectric of the ultraviolet reflective layer 10 is five layers or the case of 16 layers was illustrated in the said embodiment, the layer which consists of a dielectric of the ultraviolet reflective layer 10 is a layer of these laminations It is not limited to the number.
  • the layer made of the dielectric of the ultraviolet reflective layer 10 may have one or more, preferably two or more different dielectrics. Further, the number of layers of the dielectric of the ultraviolet reflective layer 10 may be even or odd.
  • emission surface 40 in the ultraviolet reflective layer 10 was silicon dioxide or aluminum oxide was illustrated.
  • the dielectric layer having the emitting surface 40 may be silicon nitride, zirconium dioxide or titanium dioxide.
  • the layer which consists of a dielectric in the ultraviolet reflective layer 10 is silicon dioxide, aluminum oxide, or titanium dioxide was illustrated.
  • the material (substance) for forming the dielectric layer in the ultraviolet reflective layer 10 may be silicon nitride, zirconium dioxide, titanium dioxide, magnesium oxide, hafnium oxide, aluminum nitride, zinc oxide, niobium pentoxide .
  • the combination of the material (substance) which forms each layer which consists of a dielectric in the ultraviolet reflective layer 10 is not restricted to the range as described in the said embodiment.
  • the relationship between the wavelength and the absorptivity with respect to Tempax that is, the absorptivity of Tempax (thick solid line), the absorptivity in the case where Tempax and silver as light reflecting layer 20 are laminated (dotted-dotted line Absorptivity (thin solid line) in the case where the ultraviolet ray reflection layer of Example 1, the Tempax and the silver as the light reflection layer 20 are laminated in the form of the present invention, and the ultraviolet ray reflection layer of Example 1 and Tempax
  • the absorptivity when laminated (two-dot chain line), and the absorptivity (thin broken line) when Tempacx, the ultraviolet reflection layer of Example 1 and silver as the light reflection layer 20 are laminated in a conventional form, and , The absorption rate of silver (thick broken line) respectively.
  • the present invention is applicable to a radiation cooling device and a radiation cooling method in which absorption of ultraviolet light is suppressed.
  • UV reflective layer 11 dielectric layer (dielectric, UV reflective layer) 12: Dielectric layer (dielectric, ultraviolet reflection layer) 13: Dielectric layer (dielectric, ultraviolet reflection layer) 14: Dielectric layer (dielectric, ultraviolet reflection layer) 15: Dielectric layer (dielectric, ultraviolet reflection layer) 20: Light reflecting layer (dielectric, ultraviolet reflecting layer) 30: infrared radiation layer 40: radiation surface 51: dielectric layer (dielectric, ultraviolet reflection layer) 52: Dielectric layer (dielectric, ultraviolet reflection layer) 53: Dielectric layer (dielectric, ultraviolet reflection layer) 54: Dielectric layer (dielectric, ultraviolet reflection layer) 55: Dielectric layer (dielectric, ultraviolet reflective layer) 56: Dielectric layer (dielectric, ultraviolet reflective layer) 57: Dielectric layer (dielectric, ultraviolet reflective layer) 58: Dielectric layer (dielectric, ultraviolet reflection layer) 59: Dielectric layer (dielectric, ultraviolet reflection layer) 60: Dielectric layer (dielectric, ultraviolet reflection layer) 61: Dielectric layer (dielectric, ultraviolet reflection

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Abstract

L'invention concerne un dispositif de refroidissement par rayonnement et un procédé de refroidissement par rayonnement, l'absorption de la lumière ultraviolette étant supprimée. Ce dispositif de refroidissement par rayonnement 100 est pourvu d'une couche de réflexion des ultraviolets 10 qui réfléchit la lumière ultraviolette UV, d'une couche de réflexion de lumière 20 qui réfléchit la lumière visible et la lumière infrarouge, et d'une couche de rayonnement infrarouge 30 qui émet une lumière infrarouge IR. Ce dispositif de refroidissement par rayonnement 100 émet une lumière infrarouge IR à partir d'une surface de rayonnement 40, et est obtenu par stratification séquentielle de la couche de réflexion des ultraviolets 10, de la couche de rayonnement infrarouge 30 et de la couche de réflexion de lumière 20 dans cet ordre lorsqu'il est vu depuis le côté de la surface de rayonnement 40.
PCT/JP2018/007819 2017-03-28 2018-03-01 Dispositif de refroidissement par rayonnement et procédé de refroidissement par rayonnement WO2018180177A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201880021513.7A CN110462464B (zh) 2017-03-28 2018-03-01 辐射冷却装置和辐射冷却方法
US16/494,389 US11598592B2 (en) 2017-03-28 2018-03-01 Radiative cooling device and radiative cooling method

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JP2017062894 2017-03-28
JP2017-062894 2017-03-28
JP2017218235A JP6861614B2 (ja) 2017-03-28 2017-11-13 放射冷却装置および放射冷却方法
JP2017-218235 2017-11-13

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110030744A (zh) * 2019-04-09 2019-07-19 中国科学技术大学 一种光谱自适应的白天太阳能集热夜间辐射制冷涂层材料
WO2020022156A1 (fr) * 2018-07-23 2020-01-30 大阪瓦斯株式会社 Dispositif de refroidissement par rayonnement
WO2020214989A1 (fr) * 2019-04-17 2020-10-22 SkyCool Systems, Inc. Dispositif de refroidissement par rayonnement
WO2020240366A1 (fr) * 2019-05-31 2020-12-03 3M Innovative Properties Company Film de refroidissement composite et article le comprenant
JP2022531021A (ja) * 2019-05-31 2022-07-05 スリーエム イノベイティブ プロパティズ カンパニー 複合冷却フィルム及び同フィルムを含む物品
JP2023545596A (ja) * 2020-09-23 2023-10-31 レオナルド・エッセ・ピ・ア 光学的太陽光反射装置用多層コーティング
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CN118308690A (zh) * 2024-06-07 2024-07-09 国科大杭州高等研究院 一种辐射冷却涂层结构及其制备工艺
TWI869382B (zh) * 2019-03-27 2025-01-11 日商大阪瓦斯股份有限公司 輻射冷卻裝置及輻射冷卻方法

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US11427500B2 (en) 2018-07-23 2022-08-30 Osaka Gas Co., Ltd. Radiative cooling device
WO2020022156A1 (fr) * 2018-07-23 2020-01-30 大阪瓦斯株式会社 Dispositif de refroidissement par rayonnement
US11835255B2 (en) 2018-12-27 2023-12-05 SkyCool Systems, Inc. Cooling panel system
TWI869382B (zh) * 2019-03-27 2025-01-11 日商大阪瓦斯股份有限公司 輻射冷卻裝置及輻射冷卻方法
CN110030744B (zh) * 2019-04-09 2020-06-26 中国科学技术大学 一种光谱自适应的白天太阳能集热夜间辐射制冷涂层材料
CN110030744A (zh) * 2019-04-09 2019-07-19 中国科学技术大学 一种光谱自适应的白天太阳能集热夜间辐射制冷涂层材料
US20220275973A1 (en) * 2019-04-17 2022-09-01 SkyCool Systems, Inc Radiative cooling systems
US11841171B2 (en) 2019-04-17 2023-12-12 SkyCool Systems, Inc. Radiative cooling systems
US11359841B2 (en) 2019-04-17 2022-06-14 SkyCool Systems, Inc. Radiative cooling systems
WO2020214989A1 (fr) * 2019-04-17 2020-10-22 SkyCool Systems, Inc. Dispositif de refroidissement par rayonnement
US20240288200A1 (en) * 2019-04-17 2024-08-29 SkyCool Systems, Inc. Radiative cooling systems
CN113906261A (zh) * 2019-04-17 2022-01-07 天酷系统股份有限公司 辐射冷却系统
US12366386B2 (en) * 2019-04-17 2025-07-22 SkyCool Systems, Inc. Radiative cooling systems
JP7135221B2 (ja) 2019-05-31 2022-09-12 スリーエム イノベイティブ プロパティズ カンパニー 複合冷却フィルム及び同フィルムを含む物品
JP7138254B2 (ja) 2019-05-31 2022-09-15 スリーエム イノベイティブ プロパティズ カンパニー 複合冷却フィルム及び同フィルムを含む物品
JP2022528289A (ja) * 2019-05-31 2022-06-09 スリーエム イノベイティブ プロパティズ カンパニー 複合冷却フィルム及び同フィルムを含む物品
WO2020240366A1 (fr) * 2019-05-31 2020-12-03 3M Innovative Properties Company Film de refroidissement composite et article le comprenant
US12339471B2 (en) 2019-05-31 2025-06-24 3M Innovative Properties Company Composite cooling film and article including the same
US11906252B2 (en) 2019-05-31 2024-02-20 3M Innovative Properties Company Composite cooling film and article including the same
CN113874213A (zh) * 2019-05-31 2021-12-31 3M创新有限公司 复合冷却膜和包括该复合冷却膜的制品
JP2022531021A (ja) * 2019-05-31 2022-07-05 スリーエム イノベイティブ プロパティズ カンパニー 複合冷却フィルム及び同フィルムを含む物品
CN113874213B (zh) * 2019-05-31 2022-07-01 3M创新有限公司 复合冷却膜和包括该复合冷却膜的制品
JP2023545596A (ja) * 2020-09-23 2023-10-31 レオナルド・エッセ・ピ・ア 光学的太陽光反射装置用多層コーティング
CN118308690A (zh) * 2024-06-07 2024-07-09 国科大杭州高等研究院 一种辐射冷却涂层结构及其制备工艺

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