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WO2018180580A1 - Dispositif à semi-conducteur et dispositif de conversion de puissance - Google Patents

Dispositif à semi-conducteur et dispositif de conversion de puissance Download PDF

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Publication number
WO2018180580A1
WO2018180580A1 PCT/JP2018/010404 JP2018010404W WO2018180580A1 WO 2018180580 A1 WO2018180580 A1 WO 2018180580A1 JP 2018010404 W JP2018010404 W JP 2018010404W WO 2018180580 A1 WO2018180580 A1 WO 2018180580A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
circuit board
semiconductor element
fixing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/010404
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English (en)
Japanese (ja)
Inventor
陽 田中
真之介 曽田
小林　浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2018540903A priority Critical patent/JPWO2018180580A1/ja
Publication of WO2018180580A1 publication Critical patent/WO2018180580A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73221—Strap and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a semiconductor device and a power conversion device, and more particularly to a semiconductor device and a power conversion device including a circuit board on which an element connected to the semiconductor element, for example, a control element for controlling the operation of the semiconductor element is mounted.
  • a control element for controlling the operation of a semiconductor element is mounted on a circuit board (control board) disposed above the semiconductor element.
  • a through hole is formed in the circuit board, and the semiconductor element and the circuit board are electrically connected by inserting and joining a control terminal of the semiconductor element into the through hole.
  • Patent Document 1 discloses a breath fit terminal having an elastic portion inserted into a through hole of a circuit board.
  • Patent Document 2 discloses a power module in which one end of a relay terminal connected to a power element is inserted into a connector arranged on the bottom surface of a control circuit board.
  • the conventional semiconductor device described above has a problem that electronic components cannot be mounted on the circuit board at a high density.
  • An object of the present invention is to provide a semiconductor device and a power conversion device in which electronic components are mounted on a circuit board at a higher density or miniaturized than a conventional semiconductor device.
  • the semiconductor device includes a semiconductor element, a circuit board disposed so as to overlap the semiconductor element in plan view, and a terminal portion connecting the semiconductor element and the circuit board.
  • the terminal portion is joined to the electrode portion formed on the surface facing the semiconductor element side on the circuit board by a joining member.
  • the present invention it is possible to provide a semiconductor device and a power conversion device in which electronic components are mounted on a circuit board at a higher density or downsized than a conventional semiconductor device.
  • FIG. 1 is a cross-sectional view showing a semiconductor device according to a first embodiment. 4 is a plan view for explaining a fixing portion of the semiconductor device according to the first embodiment.
  • FIG. FIG. 6 is a cross-sectional view showing a semiconductor device according to a second embodiment.
  • FIG. 6 is a cross-sectional view showing a semiconductor device according to a third embodiment.
  • FIG. 6 is a cross-sectional view showing a semiconductor device according to a fourth embodiment.
  • FIG. 10 is a block diagram showing a configuration of a power conversion system according to a fifth embodiment.
  • the semiconductor device 100 mainly includes a semiconductor module 110 and a circuit board 120.
  • the semiconductor module 110 mainly includes the semiconductor element 1, the first terminal portion 4, the wiring member 5, the fixing portion 6, the second terminal portion 8, the third terminal portion 11, and the sealing body 16.
  • a direction in which the semiconductor module 110 and the circuit board 120 are stacked is referred to as a first direction A.
  • the first direction A the direction from the semiconductor module 110 (semiconductor element 1) to the circuit board 120 is referred to as the upper side, and the opposite is referred to as the lower side.
  • FIG. 2 is a plan view for explaining the fixing portion 6 of the semiconductor device 100 shown in FIG. 2, illustration of the fixing member 19 and the circuit board 120 is omitted.
  • the semiconductor element 1 is a power semiconductor element, for example, an insulated gate bipolar transistor (IGBT: Insulated Gate Bipolar Transistor), a free wheel diode (FWD: Free Wheel Diode), a metal oxide semiconductor field effect transistor (MOSFET: Metal Oxide Semiconductor). Field Effect Transistor).
  • IGBT Insulated Gate Bipolar Transistor
  • FWD Free Wheel Diode
  • MOSFET Metal Oxide Semiconductor
  • Field Effect Transistor Field Effect Transistor
  • the material constituting the semiconductor element 1 includes, for example, silicon carbide (SiC).
  • the semiconductor element 1 includes a control signal pad 2 and a main electrode pad 3, for example.
  • the control signal pad 2 and the main electrode pad 3 are disposed on the surface (upper surface) of the semiconductor element 1 facing the circuit board 120.
  • the material constituting the control signal pad 2 may be any material having electrical conductivity, but is preferably a material having high electrical conductivity, and more preferably a viewpoint of achieving both electrical characteristics and mechanical characteristics. To at least one selected from the group consisting of aluminum (Al), copper (Cu), silver (Ag), nickel (Ni), and gold (Au). That is, the material constituting the control signal pad 2 may be at least one alloy selected from the above group.
  • the material constituting the main electrode pad 3 may be any material having electrical conductivity, but is preferably a material having high electrical conductivity, and more preferably a viewpoint of achieving both electrical characteristics and mechanical characteristics. To at least one selected from the group consisting of Al, Cu, Ag, Ni, and Au.
  • the material constituting the main electrode pad 3 may be the same as the material constituting the control signal pad 2. Note that only the control signal pad 2 may be disposed on the upper surface of the semiconductor element 1.
  • the semiconductor device 100 includes, for example, a plurality of semiconductor elements 1.
  • the plurality of semiconductor elements 1 are fixed to a circuit pattern 13 which will be described later, and are disposed inside a sealing body 16 which will be described later.
  • the first terminal portion 4 connects between the control signal pad 2 of the semiconductor element 1 and the electrode portion 121 of the circuit board 120.
  • the material which comprises the 1st terminal part 4 should just be arbitrary materials which have electroconductivity, Preferably it is a material which has high electrical conductivity, for example, contains at least any one of Cu and Al.
  • the first terminal portion 4 includes a first portion extending along the first direction A, and a second portion connected to the first portion and extending along the intersecting direction. And have.
  • the first portion is disposed above the second portion.
  • the first portion is arranged at a position farther from the semiconductor element 1 than the second portion.
  • the cross-sectional shape of the first terminal portion 4 in the cross section along the first direction A is, for example, L-shaped.
  • the first portion extending along the first direction A in the first terminal portion 4 has a portion joined by an electrode portion 121 of the circuit board 120 described later and a first joining member 122.
  • the upper end portion of the first portion of the first terminal portion 4 is joined to the electrode portion 121.
  • the second portion extending in the intersecting direction in the first terminal portion 4 is connected to the control signal pad 2 of the semiconductor element 1 via the wiring member 5.
  • the material which comprises the wiring member 5 should just be arbitrary materials which have electroconductivity, Preferably it is a material which has high electrical conductivity, for example, contains at least one of Cu and Al.
  • the first terminal portion 4 is fixed to the fixing portion 6.
  • a portion of the first terminal portion 4 positioned below the first portion is connected to the fixing portion 6.
  • the lower portion of the first portion of the first terminal portion 4 is covered with the fixing portion 6.
  • the portion connected to the fixed portion 6 in the first portion of the first terminal portion 4 has a portion sealed by the sealing body 16 and a portion disposed outside the sealing body 16. ing.
  • the upper end portion of the portion connected to the fixing portion 6 in the first portion of the first terminal portion 4 (the lower end portion of the portion connected to the fixing portion 6 in the first portion of the first terminal portion 4) is sealed. Arranged outside the body 16. In other words, the upper end portion of the fixed portion 6 is disposed above the upper end portion of the sealing body 16.
  • the other portion located above the portion connected to the fixing portion 6 is exposed from the sealing body 16 and is connected to the electrode portion 121 of the circuit board 120. It is joined.
  • the circuit board 120 can be disposed at a position separated by an arbitrary distance.
  • a part of the second portion extending along the intersecting direction of the first terminal portion 4 is connected to the fixing portion 6.
  • a part of the lower surface of the second portion of the first terminal portion 4 is connected to the fixing portion 6.
  • a part of the upper surface and the side surface of the second portion of the first terminal portion 4 are exposed from the fixing portion 6 and covered with the sealing body 16.
  • connection portion (corner portion) between the first portion extending along the first direction A of the first terminal portion 4 and the second portion extending along the intersecting direction is covered with the fixing portion 6. ing.
  • the fixing portion 6 is arranged in an annular shape so as to surround the semiconductor element 1 when viewed from the first direction A. As shown in FIG. 1, at least a part of the fixing portion 6 is connected to the first terminal portion 4.
  • the length of the fixing portion 6 in the first direction A is equal to or greater than the thickness of the sealing body 16 in the first direction A, and preferably exceeds the thickness.
  • the fixing unit 6 is disposed between the circuit pattern 13 and the circuit board 120.
  • At least a part of the fixing portion 6 includes a third portion extending along the first direction A, and a fourth portion connected to the third portion and extending along the intersecting direction. Yes.
  • the third portion is disposed above the fourth portion.
  • the third portion is disposed at a position farther from the semiconductor element 1 than the fourth portion.
  • the third portion and the fourth portion of the fixed portion 6 have an L shape in a cross section along the first direction A, for example.
  • At least a part of the first portion of the first terminal portion 4 is connected to a third portion of the fixing portion 6 that extends in the first direction A.
  • the third portion of the fixing portion 6 is formed with a hole 6H into which each of the first portion and the second portion of the first terminal portion 4 can be inserted.
  • the hole 6H has a portion in which the hole axis extends along the first direction, and a portion that is connected to the portion and extends along the intersecting direction.
  • the fixing unit 6 constitutes a housing of the semiconductor module 110 together with a circuit pattern 13 described later.
  • the material constituting the fixing portion 6 is a material having electrical insulation, and preferably a material that can be injection-molded and has high heat resistance.
  • the material constituting the fixing portion 6 includes at least one selected from the group consisting of polyphenylene sulfide, polybutylene terephthalate, liquid crystal resin, and fluororesin.
  • the fixing portion 6 is fixed to a circuit pattern 13 to be described later via the second bonding member 7.
  • the material constituting the second bonding member 7 is, for example, a solder material containing at least one of lead (Pb) and tin (Sn), an Ag nanoparticle paste containing Ag as a main component, or a conductive material containing Ag particles and an epoxy resin. Includes adhesive material.
  • the second terminal portion 8 is connected to the main electrode pad 3 of the semiconductor element 1 through the third bonding member 9.
  • the second terminal portion 8 connects the main electrode pads 3 of the plurality of semiconductor elements 1.
  • the material which comprises the 2nd terminal part 8 should just be arbitrary materials which have electroconductivity, Preferably it is a material which has high electrical conductivity, for example, contains at least any one of Cu and Al.
  • the second terminal portion 8 is, for example, a sheet-like member or a wire-like member.
  • the second terminal portion 8 has, for example, a structure in which these members are bent.
  • the second terminal portion 8 has, for example, a portion exposed from the sealing body 16.
  • a back electrode (not shown) is disposed on the lower surface of the semiconductor element 1.
  • the back electrode of the semiconductor element 1 is connected to a circuit pattern 13 to be described later via a fourth bonding member 10.
  • the material constituting the fourth bonding member 10 is, for example, a solder material containing at least one of lead (Pb) and tin (Sn), an Ag nanoparticle paste containing Ag as a main component, or a conductive material containing Ag particles and an epoxy resin. Includes adhesive material.
  • the third terminal portion 11 is connected to the circuit pattern 13 via the fifth joining member 12.
  • the material which comprises the 3rd terminal part 11 should just be arbitrary materials which have electroconductivity, Preferably it is a material which has high electrical conductivity, for example, contains at least any one of Cu and Al.
  • the third terminal portion 11 is, for example, a sheet-like member or a wire-like member.
  • the third terminal portion 11 has a structure in which these members are bent, for example.
  • the third terminal portion 11 has a portion exposed from the sealing body 16.
  • the material constituting the fifth joining member 12 is, for example, a solder material containing at least one of lead (Pb) and tin (Sn), an Ag nanoparticle paste containing Ag as a main component, or a conductive material containing Ag particles and an epoxy resin. Includes adhesive material.
  • the circuit pattern 13 is configured as a base on which the semiconductor element 1 is fixed.
  • the circuit pattern 13 is bonded to the insulating member 14 and the metal layer 15. At least a part of the upper surface of the circuit pattern 13 is covered with a sealing body 16.
  • the lower surface of the circuit pattern 13 is joined to the upper surface of the insulating member 14.
  • the upper surface of the metal layer 15 is joined to the lower surface of the insulating member 14.
  • the lower surface of the metal layer 15 is joined to the cooler 18 via the sixth joining member 17.
  • the insulating member 14 is a ceramic substrate, for example.
  • the material constituting the insulating member 14 may be any ceramic material, but includes, for example, at least one of alumina (A1 2 O 3 ), aluminum nitride (AlN), and silicon nitride (Si 3 N 4 ).
  • the material constituting the circuit pattern 13 and the metal layer 15 may be any material having conductivity, but is preferably a material that can be bonded to the insulating member 14 by a direct bonding method or an active metal bonding method, and more preferably. Is a material having high electrical conductivity.
  • the direct bonding method is a method of bonding the circuit pattern 13 and the insulating member 14 or the metal layer 15 and the insulating member 14 by direct reaction.
  • the circuit pattern 13 and the insulating member 14 or the metal layer 15 and the insulating member 14 are bonded by a brazing material to which an active metal such as titanium (Ti) or zirconium (Zr) is added. Is the method.
  • the sealing body 16 is formed in an area located on the inner periphery of the fixed portion 6 and above the circuit pattern 13. In other words, the sealing body 16 is disposed so as to fill the inside of the housing of the semiconductor module 110 constituted by the fixing portion 6 and the circuit pattern 13.
  • the sealing body 16 covers the semiconductor element 1, the wiring member 5, part of the first terminal part 4, part of the second terminal part 8, part of the third terminal part 11, and part of the circuit pattern 13. ing.
  • the material constituting the sealing body 16 includes at least one selected from the group consisting of silicon resin, urethane resin, epoxy resin, polyimide resin, polyamide resin, polyamideimide resin, acrylic resin, and rubber material.
  • the sealing body 16 may be configured as a laminated body, for example.
  • the sealing body 16 may be a laminate of a gel-like silicon resin layer and an epoxy resin layer stacked on the silicon resin layer.
  • the semiconductor module 110 shown in FIG. 1 includes the semiconductor element 1, the first terminal portion 4, the wiring member 5, the fixing portion 6, the second terminal portion 8, the circuit pattern 13, the insulating member 14, and the metal layer 15.
  • the third terminal portion 11 and the second joining member 7 to the fifth joining member 12 are provided.
  • the metal layer 15 of the semiconductor module 110 is joined to the cooler 18 via the sixth joining member 17.
  • the semiconductor device 100 illustrated in FIG. 1 includes one semiconductor module 110, but is not limited thereto, and can include a plurality of semiconductor modules 110. In this case, the plurality of semiconductor modules 110 may be joined to a smaller number (for example, one) of the coolers 18 than the semiconductor modules 110, and a smaller number (for example, one) of circuit boards 120 than the semiconductor modules 110. It only has to be connected to.
  • the material constituting the sixth joining member 17 is, for example, a solder material containing at least one of lead (Pb) and tin (Sn), an Ag nanoparticle paste containing Ag as a main component, or a conductive material containing Ag particles and an epoxy resin. Includes adhesive material.
  • the cooler 18 is for radiating the heat generated in the semiconductor element 1 during the operation of the semiconductor device 100 to the outside of the semiconductor device 100.
  • the material which comprises the cooler 18 should just be arbitrary materials which have high heat conductivity compared with the material which comprises the sealing body 16, for example, Al or Cu is included.
  • the material constituting the cooler 18 may be an alloy mainly composed of Al or Cu, or a composite material of SiC and Al (Al—SiC).
  • the cooler 18 When viewed from the first direction A, the cooler 18 includes an outer peripheral portion located on the outer peripheral side of the semiconductor module 110.
  • the cooler 18 may be provided with a flow path for circulating a refrigerant that can exchange heat with the cooler 18, for example.
  • a screw hole is formed on the outer peripheral side of the region joined to the semiconductor module 110, and a fixing member 19 is screwed and fixed to the screw hole.
  • a fixing member 19 is fixed to the outer peripheral portion of the cooler 18.
  • the lower end of the fixing member 19 is connected and fixed to the outer peripheral portion of the cooler 18.
  • the upper end of the fixing member 19 is fixed to the circuit board 120.
  • the fixing member 19 positions the circuit board 120 above the semiconductor module 110.
  • the fixing member 19 only needs to have an arbitrary structure as long as the circuit board 120 can be fixed to the cooler 18.
  • the fixing member 19 is a restraining member such as a bolt or a rivet.
  • the fixing member 19 is provided as a separate body from the fixing portion 6.
  • each semiconductor module 110 includes at least one fixing portion 6, and thus the semiconductor device 100 includes a plurality of fixing portions 6.
  • the semiconductor device 100 only needs to include, for example, fewer circuit boards 120, coolers 18, and fixing members 19 than the semiconductor modules 110.
  • the circuit board 120 is disposed so as to overlap the semiconductor element 1 when viewed from the first direction A.
  • the circuit board 120 is disposed above the semiconductor element 1.
  • An arbitrary circuit pattern is formed on the circuit board 120.
  • a control element for controlling the operation of the semiconductor element 1 is mounted on the circuit board 120, and a control circuit including the control element is formed.
  • the circuit board 120 includes an electrode part 121 formed on the lower surface facing the semiconductor element 1.
  • the material constituting the electrode part 121 may be any material having electrical conductivity, but is preferably a material having high electrical conductivity, and more preferably from the viewpoint of achieving both electrical characteristics and mechanical characteristics. And at least one selected from the group consisting of Al, Cu, Ag, Ni, and Au.
  • the material constituting the electrode part 121 may be at least one alloy selected from the above group.
  • the circuit board 120 is disposed outside the sealing body 16. In the circuit board 120, for example, a through hole is formed on the outer peripheral side of the region where the circuit pattern is arranged, and the fixing member 19 is inserted through the through hole.
  • the area of the electrode portion 121 is, for example, not less than the area of the end portion (upper end portion) located on the circuit board 120 side in the first terminal portion 4 and 1.5 of the area of the upper end portion. Is less than double.
  • the area of the first bonding member 122 is equal to or smaller than the area of the electrode portion 121.
  • the maximum width of the first joining member 122 is not less than the maximum width of the first terminal portion 4 and not more than the maximum width of the fixed portion 6.
  • the first terminal portion 4 is joined to the electrode portion 121 via the first joining member 122.
  • the material constituting the first bonding member 122 may be any material having electrical conductivity, but is preferably a material having high electrical conductivity, for example, solder containing Ag (Sn) as a main component, Ag. It contains an Ag nanoparticle paste as a main component, or a conductive adhesive containing Ag particles and an epoxy resin.
  • a circuit pattern formed on the circuit board 120 is formed in the area on the lower surface where the electrode portion 121 is formed and the area on the upper surface overlapping the first direction A.
  • the component 123 is, for example, a control element that controls the operation of the semiconductor element 1.
  • the circuit board 120 is a so-called control board.
  • the semiconductor device 100 includes the semiconductor element 1, the circuit board 120 arranged so as to overlap the semiconductor element 1 when viewed from the first direction A, and the semiconductor element 1 and the circuit board 120. And a first terminal portion 4 connected to each other.
  • the circuit board 120 includes an electrode portion 121 formed on the lower surface facing the semiconductor element 1 side. The first terminal portion 4 is joined to the electrode portion 121 by the first joining member 122.
  • the electrode part 121 is formed only on the lower surface of the circuit board 120 facing the semiconductor element 1 side.
  • the arrangement of the electrode portion 121 on the lower surface does not significantly affect the arrangement of the circuit pattern on the upper surface of the circuit board 120 unlike a through hole for inserting a press-fit terminal in the conventional semiconductor device. Therefore, in the semiconductor device 100, circuit patterns can be arranged on the upper surface of the circuit board 120 with high density regardless of the arrangement of the electrode portions 121.
  • the circuit board 120 can be downsized as compared with the conventional semiconductor device, and thus the semiconductor device 100 can be downsized.
  • the semiconductor device 100 is arranged between a circuit pattern 13 as a base on which the semiconductor element 1 is fixed, and between the circuit pattern 13 and the circuit board 120, and the first terminal portion 4 with respect to the circuit pattern 13. And a fixing portion 6 for fixing the.
  • the fixing part 6 is connected to at least a part of the first terminal part 4 other than the part joined to the electrode part 121 by the first joining member 122.
  • the conventional semiconductor device in which the first terminal portion is not positioned by the fixing portion, in the step of forming the sealing body, the flow of the fluid material to be the sealing body and the fluid material is cured to the sealing body
  • the position of the first terminal portion in the semiconductor module varies due to deformation or the like when being performed. Therefore, the electrode portion formed on the circuit board is formed larger than the first terminal portion in consideration of the variation in the position of the first terminal portion. Therefore, the conventional semiconductor device has a problem that circuit patterns cannot be arranged on the circuit board at a high density. Further, in such a conventional semiconductor device, when the relative position of the circuit board with respect to the semiconductor module changes due to vibration or the like, the first terminal portion is pulled out of the through hole of the circuit board, resulting in poor connection. There was a problem.
  • the semiconductor device 100 according to the first embodiment, the variation in the position of the end portion (upper end portion) located on the circuit board 120 side of the first terminal portion 4 in the semiconductor module 110 is caused by the fixing portion 6. It is suppressed. Therefore, according to the semiconductor device 100, the electrode portion 121 can be narrowed compared to the conventional semiconductor device that does not include the fixing portion 6, and accordingly, the circuit pattern is arranged on the circuit board 120 with high density. be able to. Furthermore, in the semiconductor device 100, even when the relative position of the circuit board 120 with respect to the semiconductor module 110 changes due to vibration or the like, the occurrence of poor connection between the first terminal unit 4 and the electrode unit 121 is suppressed. Yes.
  • the first terminal portion 4 includes a first portion extending in the first direction A. A part of the first portion extending in the first direction A of the first terminal portion 4 is joined to the electrode portion 121 by the first joining member 122. The other part of the first portion extending in the first direction A of the first terminal portion 4 is connected to the fixing portion 6.
  • the fixing portion 6 In this way, the variation in the position in the direction intersecting the first direction A of a part of the first portion of the first terminal portion 4 is suppressed by the fixing portion 6.
  • the electrode portion 121 can be narrowed compared to the conventional semiconductor device that does not include the fixing portion 6, and accordingly, the circuit pattern is arranged on the circuit board 120 with high density. be able to.
  • the fixing portion 6 is disposed so as to surround the semiconductor element 1 in a plan view.
  • the sealing body 16 is formed in a region including the semiconductor element 1 surrounded by the fixing portion 6.
  • a portion of the first terminal portion 4 that is joined to the electrode portion 121 by the first joining member 122 is disposed outside the sealing body 16.
  • the electrode portion 121 can be narrowed compared to the conventional semiconductor device that does not include the fixing portion 6 and the first terminal portion is directly covered with the sealing body. Accordingly, circuit patterns can be arranged on the circuit board 120 with high density.
  • the fixing portion 6 is configured as a housing of a semiconductor module 110 in which the semiconductor element 1 is sealed with a sealing body 16. Since the material constituting the fixed portion 6 is a material having electrical insulation, the first terminal portion 4 can be electrically insulated from the outside by the fixed portion 6.
  • the semiconductor device 100 may include a plurality of semiconductor modules 110, and a smaller number (for example, one) of coolers 18 and circuit boards 120 than the semiconductor modules 110. In such a semiconductor device 100, it is necessary to relatively position the cooler 18 and the circuit board 120 occupying the whole as compared with the semiconductor device 100 including one semiconductor module 110, the cooler 18, and the circuit board 120. Space saving is realized because the ratio of the large area is small.
  • the semiconductor device 100 may include a plurality of semiconductor elements 1, a plurality of fixing portions 6, a plurality of electrode portions 121, and a smaller number of circuit boards 120 than the electrode portions 121.
  • the semiconductor device 100 may include a plurality of semiconductor modules 110 fixed to the circuit pattern 13 as a base.
  • the semiconductor device 100 further includes a circuit board 120 fixed to the circuit pattern 13 and further includes a smaller number of fixing members 19 than the electrode portions 121.
  • each of the plurality of power modules 110 does not have to include a fixing member for fixing the circuit board 120. Therefore, according to the semiconductor device 100 described above, even when a plurality of semiconductor modules 110 are provided, the circuit board is compared with the conventional semiconductor device in which one circuit board is disposed in the case of one power module. Since the area connected to the fixing member 19 in 120 can be reduced, electronic components can be mounted on one circuit board 120 with high density.
  • the width of the electrode portion 121 is not less than the width of the end portion (upper end portion) located on the circuit board 120 side of the first terminal portion 4 in the plan view and is located on the circuit board 120 side of the fixed portion 6. It is below the width of the end (upper end).
  • the bonding area between the first terminal portion 4 and the electrode portion 121 of the circuit board 120 since the variation in the position of the upper end portion of the first terminal portion 4 is suppressed by the fixing portion 6, the bonding area between the first terminal portion 4 and the electrode portion 121 of the circuit board 120. However, it can be made substantially equal to the end area of the upper end portion of the first terminal portion 4 in plan view.
  • variety of the electrode part 121 may be made substantially equivalent to the width
  • FIG. Therefore, the circuit board 120 of the semiconductor device 100 does not include the fixing part 6 and the electrode part 121 has an electrode part 121 as compared with the conventional circuit board of the semiconductor device in which the first terminal part is directly covered with the sealing body. Since it can be sufficiently narrowed, it can be miniaturized. Note that the width of the electrode part 121 of the semiconductor device 100 can be at most equal to or less than the width of the upper end part located on the circuit board 120 side of the fixed part 6.
  • semiconductor device 101 according to the second embodiment basically has the same configuration as semiconductor device 100 according to the first embodiment, but is fixed to fixing portion 6 at first terminal portion 4. The difference is that the portion that is not included includes the bent portion 21.
  • the bent portion 21 of the first terminal portion 4 is disposed outside the sealing body 16. A portion of the first terminal portion 4 that is joined to the electrode portion 121 of the circuit board 120 is disposed above the bent portion 21.
  • the bending portion 21 is provided so as to be deformable when receiving a force in the first direction A and in a direction intersecting the first direction A.
  • the number of bends of the bent portion 21 may be an arbitrary number of 1 or more. As shown in FIG. 3, the number of bends of the bent portion 21 may be three, for example.
  • the semiconductor device 101 since the first terminal portion 4 includes the bent portion 21, the relative position of the circuit board 120 with respect to the semiconductor module 110 changes due to vibration or the like. Even in this case, the bent portion 21 can be deformed according to the change. Therefore, in the semiconductor device 101, the reliability of the joint portion between the first terminal portion 4 and the electrode portion 121 is improved as compared with the semiconductor device 100.
  • the semiconductor device 102 according to the third embodiment basically has the same configuration as the semiconductor device 100 according to the first embodiment, but the fixing unit 6 is provided in the cooler 18 as a base. It differs in that it is fixed.
  • the fixed portion 6 is connected to the cooler 18 via the second joining member 7.
  • the semiconductor device 102 according to the third embodiment has the same configuration as that of the semiconductor device 100 according to the first embodiment, the same effects as the semiconductor device 100 can be obtained.
  • the semiconductor device 103 according to the fourth embodiment basically has the same configuration as that of the semiconductor device 100 according to the first embodiment, but the first terminal portion 4 partially extends from the fixed portion 6. And the control signal pad 2 is joined via the seventh joining member 51.
  • the second portion extending in the intersecting direction in the first terminal portion 4 is provided so as to extend also above the control signal pad 2 of the semiconductor element 1.
  • a portion of the first terminal portion 4 located above the control signal pad 2 in the second portion is connected to the control signal pad 2 via a seventh bonding member 51.
  • the seventh joining member 51 has an upper surface that is located above and joined to a surface that is located below the first terminal portion 4, and a bottom surface that is joined to the surface located above the control signal pad 2. is doing.
  • the upper surface of the seventh bonding member 51 is disposed so as to overlap the lower surface of the seventh bonding member 51.
  • the area of the upper surface of the seventh bonding member 51 is, for example, not more than the area of the lower surface of the seventh bonding member 51.
  • the material constituting the seventh joining member 51 is, for example, a solder material containing at least one of lead (Pb) and tin (Sn), an Ag nanoparticle paste containing Ag as a main component, or a conductive material containing Ag particles and an epoxy resin. Includes adhesive material.
  • the wiring member 5 In the semiconductor device 100 in which the wiring member 5 is used for connection between the first terminal portion 4 and the control signal pad 2, for example, when a large vibration or thermal cycle is applied between the control signal pad 2 and the first terminal portion 4. In addition, the wiring member 5 may be disconnected due to fatigue. Further, in the semiconductor device 100, it is necessary to secure a space in which the wiring member 5 is arranged, and it may be difficult to reduce the size of the semiconductor device 100.
  • the control signal pad 2 and the first terminal portion 4 are connected by the seventh bonding member 51 instead of the wiring member 5 shown in FIG.
  • the seventh bonding member 51 is less likely to break due to fatigue than the wiring member 5 due to its shape and constituent materials. Therefore, in the semiconductor device 103, compared to the semiconductor device 100, for example, even when a large vibration or thermal cycle is applied between the control signal pad 2 and the first terminal portion 4, there is a poor connection between the two. Hard to occur.
  • the semiconductor device 103 since the space for connecting the wiring member 5 can be saved, the enlargement of the semiconductor device can be suppressed.
  • the other configuration of the semiconductor device 103 according to the fourth embodiment is the same as that of the semiconductor device 100 according to the first embodiment, and therefore, the same effect as that of the semiconductor device 100 can be obtained.
  • the semiconductor device 103 according to the fourth embodiment shown in FIG. 5 has basically the same configuration as the semiconductor device 100 according to the first embodiment, but the semiconductor device 101 according to the second and third embodiments and A configuration similar to 102 may be provided (not shown).
  • the material constituting the insulating member 14 may be an organic material including a ceramic filler.
  • the ceramic filler is, for example, at least one of alumina, aluminum nitride, and boron nitride.
  • the organic material include at least one of an epoxy resin, a polyimide resin, and a cyanate resin.
  • Such semiconductor devices 100, 101, 102, and 103 may not include the metal layer 15 and the sixth bonding member 17, and the circuit pattern 13 may be bonded to the cooler 18 through the insulating member 14. Good.
  • the sealing body 16 is formed in the fixed portion 6 that is configured as the housing of the semiconductor module 110. It is not limited.
  • the semiconductor devices 100, 101, 102, and 103 are separate from the fixing unit 6, are disposed so as to surround the semiconductor element 1 in plan view, and are on the circuit pattern 13 or the cooler 18 as a base.
  • the case member may be further provided.
  • the sealing body 16 may be formed in the case member.
  • the sealing body 16 may be formed outside the fixing portion 6 with respect to the semiconductor element 1.
  • Embodiment 5 the semiconductor device according to the fifth embodiment described above is applied to a power conversion device.
  • the present invention is not limited to a specific power converter, hereinafter, a case where the present invention is applied to a three-phase inverter will be described as a fifth embodiment.
  • FIG. 6 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to the present embodiment is applied.
  • the power conversion system shown in FIG. 6 includes a power source 130, a power conversion device 200, and a load 300.
  • the power supply 130 is a DC power supply and supplies DC power to the power conversion apparatus 200.
  • the power supply 130 can be composed of various types, for example, can be composed of a DC system, a solar battery, a storage battery, or can be composed of a rectifier circuit or an AC / DC converter connected to the AC system. Also good.
  • the power source 130 may be configured by a DC / DC converter that converts direct-current power output from the direct-current system into predetermined power.
  • the power conversion device 200 is a three-phase inverter connected between the power supply 130 and the load 300, converts the DC power supplied from the power supply 130 into AC power, and supplies the AC power to the load 300. As shown in FIG. 6, the power conversion device 200 converts a DC power into an AC power and outputs the main conversion circuit 201, and a control circuit 203 outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201. And.
  • the load 300 is a three-phase electric motor that is driven by AC power supplied from the power conversion device 200.
  • the load 300 is not limited to a specific application, and is an electric motor mounted on various electric devices.
  • the load 300 is used as an electric motor for a hybrid vehicle, an electric vehicle, a railway vehicle, an elevator, or an air conditioner.
  • the main conversion circuit 201 includes a switching element and a free wheel diode (not shown). When the switching element switches, the main conversion circuit 201 converts the DC power supplied from the power source 130 into AC power and supplies the AC power to the load 300. Although there are various specific circuit configurations of the main conversion circuit 201, the main conversion circuit 201 according to the present embodiment is a two-level three-phase full bridge circuit, and includes six switching elements and respective switching elements. It can be composed of six anti-parallel diodes.
  • Each switching element and each free-wheeling diode of the main conversion circuit 201 are configured by the semiconductor device 202 corresponding to the semiconductor devices 100, 101, 102, 103 of any of the first to fourth embodiments described above.
  • the six switching elements are connected in series for each of the two switching elements to constitute upper and lower arms, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit.
  • the output terminals of the upper and lower arms, that is, the three output terminals of the main conversion circuit 201 are connected to the load 300.
  • the main conversion circuit 201 includes a drive circuit (not shown) that drives each switching element.
  • the drive circuit may be built in the semiconductor device 202 or a drive circuit may be provided separately from the semiconductor device 202. The structure provided may be sufficient.
  • the drive circuit generates a drive signal for driving the switching element of the main conversion circuit 201 and supplies the drive signal to the control electrode of the switching element of the main conversion circuit 201. Specifically, in accordance with a control signal from the control circuit 203 described later, a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrode of each switching element.
  • the drive signal When the switching element is maintained in the ON state, the drive signal is a voltage signal (ON signal) that is equal to or higher than the threshold voltage of the switching element, and when the switching element is maintained in the OFF state, the drive signal is a voltage that is equal to or lower than the threshold voltage of the switching element.
  • Signal (off signal) When the switching element is maintained in the ON state, the drive signal is a voltage signal (ON signal) that is equal to or higher than the threshold voltage of the switching element, and when the switching element is maintained in the OFF state, the drive signal is a voltage that is equal to or lower than the threshold voltage of the switching element.
  • Signal (off signal) When the switching element is maintained in the ON state, the drive signal is a voltage signal (ON signal) that is equal to or higher than the threshold voltage of the switching element, and when the switching element is maintained in the OFF state, the drive signal is a voltage that is equal to or lower than the threshold voltage of the switching element.
  • Signal (off signal) When the switching element is maintained in the ON state,
  • the control circuit 203 controls the switching element of the main conversion circuit 201 so that desired power is supplied to the load 300. Specifically, based on the power to be supplied to the load 300, the time (ON time) during which each switching element of the main converter circuit 201 is to be turned on is calculated. For example, the main conversion circuit 201 can be controlled by PWM control that modulates the ON time of the switching element in accordance with the voltage to be output. Then, a control command (control signal) is supplied to the drive circuit included in the main conversion circuit 201 so that an ON signal is output to the switching element that should be turned on at each time point and an OFF signal is output to the switching element that should be turned off. Is output. In accordance with this control signal, the drive circuit outputs an ON signal or an OFF signal as a drive signal to the control electrode of each switching element.
  • the semiconductor device according to the first to fourth embodiments is applied as the switching element and the free wheel diode of the main conversion circuit 201, it is compared with the conventional power conversion device including the conventional semiconductor device. And can be miniaturized.
  • the present invention is not limited to this, and can be applied to various power conversion devices.
  • a two-level power converter is used.
  • a three-level or multi-level power converter may be used.
  • the present invention is applied to a single-phase inverter. You may apply.
  • the present invention can be applied to a DC / DC converter or an AC / DC converter.
  • the power conversion device to which the present invention is applied is not limited to the case where the load described above is an electric motor.
  • the power source of an electric discharge machine, a laser processing machine, an induction heating cooker, or a non-contact power supply system It can also be used as a device, and can also be used as a power conditioner for a photovoltaic power generation system, a power storage system, or the like.
  • SYMBOLS 1 Semiconductor element 2 Control signal pad, 3 Main electrode pad, 4 1st terminal part, 5 Wiring member, 6 Fixing part, 6H hole part, 7 2nd joining member, 8 2nd terminal part, 9 3rd joining member, 10 4th joining member, 11 3rd terminal part, 12 5th joining member, 13 circuit pattern, 14 insulation member, 15 metal layer, 16 sealing body, 17 6th joining member, 18 cooler, 19 fixing member, 21 Bent part, 51 7th joining member, 100, 101, 102, 103, 202 semiconductor device, 110 semiconductor module, 120 circuit board, 121 electrode part, 122 1st joining member, 123 parts, 130 power supply, 200 power converter, 201 Main conversion circuit, 203 control circuit, 300 load.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)

Abstract

L'invention concerne un dispositif à semi-conducteur dans lequel un composant électronique est monté sur un substrat de circuit à une densité supérieure ou ayant une plus petite taille par comparaison avec un dispositif à semi-conducteur classique, et un dispositif de conversion de puissance. Le dispositif à semi-conducteur est pourvu d'un élément semi-conducteur (1), d'un substrat de circuit (120) disposé de façon à chevaucher l'élément semi-conducteur (1) dans une vue en plan, et d'une partie borne (4) connectant l'élément semi-conducteur (1) et le substrat de circuit (120). Le substrat de circuit (120) comprend une partie électrode (121) formée sur une surface faisant face à l'élément semi-conducteur (1). La partie borne (4) est liée à la partie électrode (121) au moyen d'un élément de liaison (122).
PCT/JP2018/010404 2017-03-30 2018-03-16 Dispositif à semi-conducteur et dispositif de conversion de puissance Ceased WO2018180580A1 (fr)

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CN113874998A (zh) * 2019-06-03 2021-12-31 三菱电机株式会社 半导体模块以及电力变换装置
US11587861B2 (en) * 2020-03-30 2023-02-21 Fuji Electric Co., Ltd. Semiconductor device and manufacturing method thereof
JP7334369B1 (ja) * 2022-06-28 2023-08-28 三菱電機株式会社 パワーモジュール及び電力変換装置

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JP2001237359A (ja) * 2000-02-22 2001-08-31 Sansha Electric Mfg Co Ltd 半導体装置
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JP4329961B2 (ja) * 1999-11-15 2009-09-09 日本インター株式会社 複合半導体装置
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JP4900165B2 (ja) * 2007-09-27 2012-03-21 三菱電機株式会社 電力半導体モジュール
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JP2000196011A (ja) * 1998-12-28 2000-07-14 Mitsubishi Electric Corp 電子装置及びその製造方法
JP2001284524A (ja) * 2000-01-28 2001-10-12 Toshiba Corp 電力用半導体モジュール
JP2001237359A (ja) * 2000-02-22 2001-08-31 Sansha Electric Mfg Co Ltd 半導体装置
JP2002217363A (ja) * 2001-01-17 2002-08-02 Matsushita Electric Ind Co Ltd 電力制御系電子回路装置及びその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113874998A (zh) * 2019-06-03 2021-12-31 三菱电机株式会社 半导体模块以及电力变换装置
US11587861B2 (en) * 2020-03-30 2023-02-21 Fuji Electric Co., Ltd. Semiconductor device and manufacturing method thereof
JP7334369B1 (ja) * 2022-06-28 2023-08-28 三菱電機株式会社 パワーモジュール及び電力変換装置
WO2024004024A1 (fr) * 2022-06-28 2024-01-04 三菱電機株式会社 Module d'alimentation et dispositif de conversion de puissance

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